TWI828827B - 化合物、（共）聚合物、組成物、圖型形成方法，及化合物之製造方法 - Google Patents

化合物、（共）聚合物、組成物、圖型形成方法，及化合物之製造方法 Download PDF

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TWI828827B
TWI828827B TW108147263A TW108147263A TWI828827B TW I828827 B TWI828827 B TW I828827B TW 108147263 A TW108147263 A TW 108147263A TW 108147263 A TW108147263 A TW 108147263A TW I828827 B TWI828827 B TW I828827B
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Taiwan
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group
carbon atoms
iodine
meth
formula
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TW108147263A
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English (en)
Chinese (zh)
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TW202039408A (zh
Inventor
大松禎
松本正裕
由利道裕
片岡健太郎
Takashi Sato
越後雅敏
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日商三菱瓦斯化學股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/62—Halogen-containing esters
    • C07C69/65—Halogen-containing esters of unsaturated acids
    • C07C69/653—Acrylic acid esters; Methacrylic acid esters; Haloacrylic acid esters; Halomethacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
    • C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
    • C07C69/734—Ethers
    • C07C69/736—Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96—Esters of carbonic or haloformic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/22—Esters containing halogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Furan Compounds (AREA)
TW108147263A 2018-12-27 2019-12-23 化合物、（共）聚合物、組成物、圖型形成方法，及化合物之製造方法 TWI828827B (zh)

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Application Number Priority Date Filing Date Title
JP2018-244504 2018-12-27
JP2018244504 2018-12-27
JP2019144313 2019-08-06
JP2019-144313 2019-08-06

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TW202039408A TW202039408A (zh) 2020-11-01
TWI828827B true TWI828827B (zh) 2024-01-11

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Country Status (6)

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US (1) US20220119336A1 (https=)
JP (2) JP7579516B2 (https=)
KR (2) KR20260019026A (https=)
CN (1) CN113227028A (https=)
TW (1) TWI828827B (https=)
WO (1) WO2020137935A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220119336A1 (en) * 2018-12-27 2022-04-21 Mitsubishi Gas Chemical Company, Inc. Compound, (co)polymer, composition, method for forming pattern, and method for producing compound
JP7509071B2 (ja) * 2020-04-28 2024-07-02 信越化学工業株式会社 ヨウ素化芳香族カルボン酸型ペンダント基含有ポリマー、レジスト材料及びパターン形成方法
WO2021230300A1 (ja) * 2020-05-15 2021-11-18 三菱瓦斯化学株式会社 化合物、（共）重合体、組成物、レジストパターン形成方法、並びに化合物及び（共）重合体の製造方法
JP7789494B2 (ja) * 2020-06-01 2025-12-22 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
FR3113904B1 (fr) * 2020-09-08 2022-08-12 Innoverda Procédé de synthèse du 3,5-diiodo-4-hydroxy benzylalcool
KR20230123513A (ko) * 2020-12-21 2023-08-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 중합체, 조성물, 막형성용 조성물, 패턴의형성방법, 절연막의 형성방법 및 화합물의 제조방법
CN116615405A (zh) * 2020-12-21 2023-08-18 三菱瓦斯化学株式会社 化合物、聚合物、组合物、膜形成用组合物、图案的形成方法、绝缘膜的形成方法及化合物的制造方法
IL310053A (en) * 2021-07-14 2024-03-01 Fujifilm Corp A method for creating a template and a method for manufacturing an electronic device
US20230103685A1 (en) * 2021-09-30 2023-04-06 Rohm And Haas Electronic Materials Llc Iodine-containing acid cleavable compounds, polymers derived therefrom, and photoresist compositions
WO2023189586A1 (ja) * 2022-03-29 2023-10-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2023189969A1 (ja) * 2022-03-31 2023-10-05 日本ゼオン株式会社 レジスト組成物及びレジストパターン形成方法
JP2023161653A (ja) * 2022-04-26 2023-11-08 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び化合物
JP7722257B2 (ja) * 2022-05-10 2025-08-13 信越化学工業株式会社 マスクブランク、レジストパターン形成方法及び化学増幅ポジ型レジスト組成物
CN114755884B (zh) * 2022-06-14 2022-09-16 之江实验室 一种有机无机杂化飞秒激光直写光刻胶
CN115784891B (zh) * 2022-12-14 2024-09-27 吉林化工学院 一种受阻酚类抗氧剂及其制备方法和应用
WO2024147288A1 (ja) * 2023-01-06 2024-07-11 富士フイルム株式会社 パターン形成方法、パターン形成用キット、及び電子デバイスの製造方法
JPWO2024150663A1 (https=) * 2023-01-11 2024-07-18
WO2025079631A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
WO2025079646A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 有機ハロゲン化合物の製造方法、化合物、酸発生剤、塩基発生剤、クエンチャー、重合体、組成物及びレジストパターン形成方法
TW202535805A (zh) * 2023-10-20 2025-09-16 日商三菱瓦斯化學股份有限公司 含碘（甲基）丙烯酸酯化合物、含碘（甲基）丙烯酸酯（共）聚合物、微影用組合物、阻劑組成物、下層膜形成用組成物及含碘（甲基）丙烯酸酯化合物之製造方法
WO2025154627A1 (ja) * 2024-01-17 2025-07-24 学校法人 関西大学 リソグラフィー下層膜形成組成物、リソグラフィー下層膜、ポジ型レジスト組成物、レジスト膜、及びレジストパターンの形成方法
WO2026054065A1 (ja) * 2024-09-09 2026-03-12 三菱瓦斯化学株式会社 ヨウ素含有（メタ）アクリル酸エステル化合物及びヨウ素・水酸基含有重合体の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6160630A (ja) * 1984-08-31 1986-03-28 Sumitomo Chem Co Ltd アルデヒド誘導体の製造法
JP2009275155A (ja) * 2008-05-15 2009-11-26 Jsr Corp 上層膜用組成物及びレジストパターン形成方法
CN104245885A (zh) * 2012-04-20 2014-12-24 Lg化学株式会社 可聚合液晶化合物、可聚合液晶组合物以及光学各向异性体
WO2018180049A1 (ja) * 2017-03-30 2018-10-04 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
TW201837048A (zh) * 2017-03-31 2018-10-16 美商羅門哈斯電子材料有限公司 酸可裂解單體及包括其之聚合物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0920721A (ja) * 1995-07-10 1997-01-21 Nippon Oil & Fats Co Ltd ２，４，６−トリヨードフェニルアクリレートおよび製造方法
US7317058B2 (en) * 2004-11-01 2008-01-08 Nitto Denko Corporation (Meth)acrylate polymer and non-linear optical device material composition
JP6196897B2 (ja) 2013-12-05 2017-09-13 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP6163438B2 (ja) * 2014-02-27 2017-07-12 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、電子デバイス、並びに、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜
JP7079591B2 (ja) * 2016-12-14 2022-06-02 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
US20220119336A1 (en) * 2018-12-27 2022-04-21 Mitsubishi Gas Chemical Company, Inc. Compound, (co)polymer, composition, method for forming pattern, and method for producing compound
JP7379059B2 (ja) * 2019-10-02 2023-11-14 キヤノン株式会社 中間サーバ装置、情報処理装置、通信方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6160630A (ja) * 1984-08-31 1986-03-28 Sumitomo Chem Co Ltd アルデヒド誘導体の製造法
JP2009275155A (ja) * 2008-05-15 2009-11-26 Jsr Corp 上層膜用組成物及びレジストパターン形成方法
CN104245885A (zh) * 2012-04-20 2014-12-24 Lg化学株式会社 可聚合液晶化合物、可聚合液晶组合物以及光学各向异性体
WO2018180049A1 (ja) * 2017-03-30 2018-10-04 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
TW201837048A (zh) * 2017-03-31 2018-10-16 美商羅門哈斯電子材料有限公司 酸可裂解單體及包括其之聚合物

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
期刊 Ori Green et al., Near-Infrared Dioxetane Luminophores with Direct Chemiluminescence Emission Mode, J. Am. Chem. Soc., Vol. 139, No. 37, American Chemical Society, Sep. 2017, pages 13243 - 13248 *
期刊 Sourabh K.Saha et al., "Radiopaque Resists for Two-Photonlithography to Enable Submicron 3D Imaging of Polymer Parts via X-ray Computed Tomography", ACS Applied Materials & Interfaces, Vol 10, ACS, Jan. 2018, pages 1164 -1172; *

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WO2020137935A1 (ja) 2020-07-02
JP2024123024A (ja) 2024-09-10
KR102923916B1 (ko) 2026-02-05
JP7579516B2 (ja) 2024-11-08
JPWO2020137935A1 (ja) 2021-11-11
US20220119336A1 (en) 2022-04-21
KR20210108939A (ko) 2021-09-03
TW202039408A (zh) 2020-11-01
CN113227028A (zh) 2021-08-06
KR20260019026A (ko) 2026-02-09

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