TWI821184B - 半導體裝置密著層形成用環氧樹脂組成物 - Google Patents

半導體裝置密著層形成用環氧樹脂組成物 Download PDF

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Publication number
TWI821184B
TWI821184B TW107116294A TW107116294A TWI821184B TW I821184 B TWI821184 B TW I821184B TW 107116294 A TW107116294 A TW 107116294A TW 107116294 A TW107116294 A TW 107116294A TW I821184 B TWI821184 B TW I821184B
Authority
TW
Taiwan
Prior art keywords
epoxy resin
resin composition
semiconductor element
semiconductor device
epoxy
Prior art date
Application number
TW107116294A
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English (en)
Chinese (zh)
Other versions
TW201902976A (zh
Inventor
諏訪剛史
上田祐揮
小出泰之
Original Assignee
日商日產化學工業股份有限公司
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Filing date
Publication date
Application filed by 日商日產化學工業股份有限公司 filed Critical 日商日產化學工業股份有限公司
Publication of TW201902976A publication Critical patent/TW201902976A/zh
Application granted granted Critical
Publication of TWI821184B publication Critical patent/TWI821184B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW107116294A 2017-05-12 2018-05-14 半導體裝置密著層形成用環氧樹脂組成物 TWI821184B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-095784 2017-05-12
JP2017095784 2017-05-12

Publications (2)

Publication Number Publication Date
TW201902976A TW201902976A (zh) 2019-01-16
TWI821184B true TWI821184B (zh) 2023-11-11

Family

ID=64104552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107116294A TWI821184B (zh) 2017-05-12 2018-05-14 半導體裝置密著層形成用環氧樹脂組成物

Country Status (3)

Country Link
JP (1) JP7064176B2 (ja)
TW (1) TWI821184B (ja)
WO (1) WO2018207920A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007091814A (ja) * 2005-09-27 2007-04-12 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02187421A (ja) * 1988-08-19 1990-07-23 Haisoole Japan Kk 紫外線感光又は透過素子用の紫外線透過性保護又は支持材料
JP2003277486A (ja) 2002-03-26 2003-10-02 Matsushita Electric Works Ltd 片面封止用エポキシ樹脂組成物及び片面封止型半導体装置
JP2005026447A (ja) * 2003-07-02 2005-01-27 Sumitomo Bakelite Co Ltd 半導体装置および半導体装置の製造方法
JP2007092002A (ja) 2005-09-30 2007-04-12 Hitachi Chem Co Ltd エポキシ樹脂組成物及びそれを用いた半導体装置用中空パッケージ、並び半導体部品装置
JP2010195997A (ja) 2009-02-27 2010-09-09 Panasonic Electric Works Co Ltd 高誘電性エポキシ樹脂組成物及び高周波デバイス
JP6325557B2 (ja) * 2013-09-27 2018-05-16 株式会社ダイセル 半導体積層用接着剤組成物
JP6074357B2 (ja) * 2013-12-24 2017-02-01 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
JP6307352B2 (ja) 2014-05-30 2018-04-04 京セラ株式会社 光半導体封止用樹脂組成物および光半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007091814A (ja) * 2005-09-27 2007-04-12 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置

Also Published As

Publication number Publication date
WO2018207920A1 (ja) 2018-11-15
JP7064176B2 (ja) 2022-05-10
TW201902976A (zh) 2019-01-16
JPWO2018207920A1 (ja) 2020-03-12

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