TWI797986B - 負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置 - Google Patents

負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置 Download PDF

Info

Publication number
TWI797986B
TWI797986B TW111104999A TW111104999A TWI797986B TW I797986 B TWI797986 B TW I797986B TW 111104999 A TW111104999 A TW 111104999A TW 111104999 A TW111104999 A TW 111104999A TW I797986 B TWI797986 B TW I797986B
Authority
TW
Taiwan
Prior art keywords
general formula
film
organic group
formula
cured film
Prior art date
Application number
TW111104999A
Other languages
English (en)
Chinese (zh)
Other versions
TW202223541A (zh
Inventor
清水建樹
平田竜也
松本涼香
Original Assignee
日商旭化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商旭化成股份有限公司 filed Critical 日商旭化成股份有限公司
Publication of TW202223541A publication Critical patent/TW202223541A/zh
Application granted granted Critical
Publication of TWI797986B publication Critical patent/TWI797986B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1025—Preparatory processes from tetracarboxylic acids or derivatives and diamines polymerised by radiations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1028—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
    • C08G73/1032—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous characterised by the solvent(s) used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12—Unsaturated polyimide precursors
    • C08G73/126—Unsaturated polyimide precursors the unsaturated precursors being wholly aromatic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
TW111104999A 2019-07-29 2020-07-29 負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置 TWI797986B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019138776 2019-07-29
JP2019-138776 2019-07-29
JP2020-036961 2020-03-04
JP2020036961 2020-03-04

Publications (2)

Publication Number Publication Date
TW202223541A TW202223541A (zh) 2022-06-16
TWI797986B true TWI797986B (zh) 2023-04-01

Family

ID=74229971

Family Applications (2)

Application Number Title Priority Date Filing Date
TW111104999A TWI797986B (zh) 2019-07-29 2020-07-29 負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置
TW109125562A TWI761897B (zh) 2019-07-29 2020-07-29 負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW109125562A TWI761897B (zh) 2019-07-29 2020-07-29 負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置

Country Status (7)

Country Link
US (2) US12174539B2 (https=)
EP (1) EP4006073A4 (https=)
JP (3) JP7431241B2 (https=)
KR (1) KR102697029B1 (https=)
CN (1) CN114207522B (https=)
TW (2) TWI797986B (https=)
WO (1) WO2021020463A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11454888B2 (en) * 2020-09-15 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US11854927B2 (en) 2021-03-24 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and method of forming same
CN117120512A (zh) * 2021-03-30 2023-11-24 富士胶片株式会社 树脂组合物、固化物、层叠体、固化物的制造方法及半导体器件、以及聚酰亚胺前驱体
TW202248026A (zh) * 2021-03-31 2022-12-16 日商太陽油墨製造股份有限公司 感光性薄膜積層體、硬化物及印刷配線板
JP7671182B2 (ja) 2021-06-14 2025-05-01 東京応化工業株式会社 感光性樹脂組成物
US12009226B2 (en) * 2021-08-27 2024-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
JP7833874B2 (ja) 2021-10-04 2026-03-23 東京応化工業株式会社 感光性樹脂組成物
WO2023058385A1 (ja) 2021-10-05 2023-04-13 東京応化工業株式会社 ブロック共重合体
KR102767265B1 (ko) * 2022-01-12 2025-02-11 삼성에스디아이 주식회사 네거티브 감광성 수지 조성물, 이를 이용하여 제조된 절연막 및 반도체 디바이스
KR102863603B1 (ko) * 2022-02-16 2025-09-22 삼성에스디아이 주식회사 네거티브 감광성 수지 조성물, 이를 이용하여 제조된 절연막 및 반도체 디바이스
KR102803377B1 (ko) * 2022-02-17 2025-05-02 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 폴리이미드 경화막, 및 이들의 제조 방법
JP2023136961A (ja) * 2022-03-17 2023-09-29 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
JP7779781B2 (ja) * 2022-03-22 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JPWO2023190064A1 (https=) * 2022-03-29 2023-10-05
KR102778140B1 (ko) * 2022-06-10 2025-03-06 피아이첨단소재 주식회사 감광성 폴리이미드 전구체 조성물 및 이로부터 제조되는 폴리이미드
WO2025217841A1 (zh) * 2024-04-17 2025-10-23 深圳先进电子材料国际创新研究院 一种负型感光性聚酰亚胺前体及其组合物
WO2025249843A1 (ko) * 2024-05-31 2025-12-04 피아이첨단소재 주식회사 폴리이미드 전구체 조성물, 이의 제조방법 및 이를 포함하는 감광성 수지 조성물

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201425390A (zh) * 2012-12-26 2014-07-01 Ind Tech Res Inst 感光型聚亞醯胺及負型光阻組成物
KR101906064B1 (ko) * 2017-07-25 2018-10-08 송기용 저온경화 가능한 유기절연체 조성물 및 이를 이용한 유기절연막 제조방법
TW201840645A (zh) * 2017-02-20 2018-11-16 日商富士軟片股份有限公司 感光性樹脂組成物、含雜環聚合物前體、硬化膜、積層體、硬化膜的製造方法及半導體裝置
TW201928522A (zh) * 2016-03-31 2019-07-16 日商旭化成股份有限公司 感光性樹脂組合物、硬化浮凸圖案之製造方法及半導體裝置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2844219B2 (ja) * 1988-08-24 1999-01-06 旭化成工業株式会社 低応力ポリイミド前駆体、及びポリイミド複合成形体の製造方法
EP0355927B1 (en) * 1988-08-24 1994-11-23 Asahi Kasei Kogyo Kabushiki Kaisha A precursor of a low thermal stress polyimide and a photopolymerizable composition containing a polyimide precursor
DE69331471T2 (de) 1992-07-22 2002-06-20 Asahi Kasei K.K., Osaka Photoempfindliche Polyimidvorlaüferzusammensetzung
JP2826940B2 (ja) 1992-07-22 1998-11-18 旭化成工業株式会社 ｉ線露光用感光性組成物
JP4513170B2 (ja) 2000-05-18 2010-07-28 東レ株式会社 感光性重合体組成物
JP2001338947A (ja) 2000-05-26 2001-12-07 Nec Corp フリップチップ型半導体装置及びその製造方法
JP2003345012A (ja) 2002-05-28 2003-12-03 Hitachi Chemical Dupont Microsystems Ltd 感光性組成物、及びこれを用いた電子部品
CN1668980B (zh) * 2002-07-11 2010-05-12 旭化成电子材料株式会社 高耐热性负型光敏树脂组合物
US7459781B2 (en) 2003-12-03 2008-12-02 Wen-Kun Yang Fan out type wafer level package structure and method of the same
US7435525B2 (en) * 2004-05-07 2008-10-14 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, method for forming pattern, and electronic part
JP5415861B2 (ja) 2009-07-29 2014-02-12 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、パターン形成方法、及び半導体装置
TWI413860B (zh) * 2010-02-16 2013-11-01 Asahi Kasei E Materials Corp A negative photosensitive resin composition, a method for manufacturing a hardened embossed pattern, and a semiconductor device
TWI430024B (zh) * 2010-08-05 2014-03-11 旭化成電子材料股份有限公司 A photosensitive resin composition, a method for manufacturing a hardened bump pattern, and a semiconductor device
KR20120119220A (ko) 2011-04-07 2012-10-31 주식회사 엘지화학 감광성 수지 조성물
JP6190805B2 (ja) * 2012-05-07 2017-08-30 旭化成株式会社 ネガ型感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
JP6016561B2 (ja) 2012-09-28 2016-10-26 旭化成株式会社 ポリイミド前駆体及びそれを含有する樹脂組成物、ポリイミドフィルム及びその製造方法、並びに、積層体及びその製造方法
KR101934171B1 (ko) * 2014-03-17 2018-12-31 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 그리고 반도체 장치
TWI534204B (zh) 2014-12-10 2016-05-21 財團法人工業技術研究院 改質聚合物及包含其之組合物
CN107615166B (zh) 2015-08-21 2020-12-25 旭化成株式会社 感光性树脂组合物、聚酰亚胺的制造方法及半导体装置
WO2017038598A1 (ja) 2015-08-28 2017-03-09 富士フイルム株式会社 硬化膜の製造方法、再配線層用層間絶縁膜の製造方法、および、半導体デバイスの製造方法
SG11201802613SA (en) 2015-09-30 2018-04-27 Toray Industries Negative type coloring photosensitive resin composition, cured film, element, and display device
US11086219B2 (en) 2016-03-30 2021-08-10 Toray Industries, Inc. Negative-type photosensitive resin composition, cured film, display device that includes the cured film, and production method therefor
US11163234B2 (en) * 2016-08-22 2021-11-02 Asahi Kasei Kabushiki Kaisha Photosensitive resin composition and method for producing cured relief pattern
WO2018155547A1 (ja) 2017-02-23 2018-08-30 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、硬化パターンの製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜、及び電子部品
WO2018179330A1 (ja) 2017-03-31 2018-10-04 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化膜の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜、及び電子部品
JP6808831B2 (ja) 2017-06-06 2021-01-06 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、半導体デバイスおよび化合物
WO2019058882A1 (ja) 2017-09-19 2019-03-28 富士フイルム株式会社 パターン形成用組成物、膜、赤外線カットフィルタ、赤外線透過フィルタ、固体撮像素子、赤外線センサ、及び、カメラモジュール
JP7169844B2 (ja) 2017-12-15 2022-11-11 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
JP7331860B2 (ja) 2018-10-15 2023-08-23 日産化学株式会社 感光性絶縁膜組成物
JPWO2020111178A1 (ja) 2018-11-29 2021-10-14 日産化学株式会社 アルコール化合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201425390A (zh) * 2012-12-26 2014-07-01 Ind Tech Res Inst 感光型聚亞醯胺及負型光阻組成物
TW201928522A (zh) * 2016-03-31 2019-07-16 日商旭化成股份有限公司 感光性樹脂組合物、硬化浮凸圖案之製造方法及半導體裝置
TW201840645A (zh) * 2017-02-20 2018-11-16 日商富士軟片股份有限公司 感光性樹脂組成物、含雜環聚合物前體、硬化膜、積層體、硬化膜的製造方法及半導體裝置
KR101906064B1 (ko) * 2017-07-25 2018-10-08 송기용 저온경화 가능한 유기절연체 조성물 및 이를 이용한 유기절연막 제조방법

Also Published As

Publication number Publication date
KR20220004189A (ko) 2022-01-11
CN114207522A (zh) 2022-03-18
TWI761897B (zh) 2022-04-21
WO2021020463A1 (ja) 2021-02-04
EP4006073A1 (en) 2022-06-01
TW202111432A (zh) 2021-03-16
US20220291585A1 (en) 2022-09-15
JP7431241B2 (ja) 2024-02-14
JPWO2021020463A1 (https=) 2021-02-04
US20250068074A1 (en) 2025-02-27
CN114207522B (zh) 2026-03-06
JP2026069582A (ja) 2026-04-23
TW202223541A (zh) 2022-06-16
JP2024009002A (ja) 2024-01-19
EP4006073A4 (en) 2022-11-23
US12174539B2 (en) 2024-12-24
KR102697029B1 (ko) 2024-08-20

Similar Documents

Publication Publication Date Title
TWI797986B (zh) 負型感光性樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置
KR102803377B1 (ko) 감광성 수지 조성물, 폴리이미드 경화막, 및 이들의 제조 방법
KR101719045B1 (ko) 네거티브형 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 및 반도체 장치
JP7309010B2 (ja) 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
TW202239815A (zh) 絕緣膜形成用感放射線性組成物、具有圖案的樹脂膜及其製造方法、及半導體電路基板
CN112799281A (zh) 感光性树脂组合物、聚酰亚胺的制造方法及半导体装置
TWI839243B (zh) 樹脂組合物、聚醯亞胺之製造方法、硬化浮凸圖案之製造方法、及半導體裝置
JP7169844B2 (ja) 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
JP7241502B2 (ja) 感光性樹脂組成物、硬化レリーフパターンの製造方法
CN118363270A (zh) 负型感光性树脂组合物、固化浮雕图案的制造方法和半导体装置
TW202217456A (zh) 感光性樹脂組合物
TWI881618B (zh) 感光性樹脂組合物、使用其之硬化膜及其製造方法、以及半導體裝置
TWI806161B (zh) 聚醯亞胺硬化膜之製造方法
JP2024059099A (ja) 樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置