TWI793500B - 用於移除光阻的剝離劑組合物及使用其的光阻剝離方法 - Google Patents

用於移除光阻的剝離劑組合物及使用其的光阻剝離方法 Download PDF

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Publication number
TWI793500B
TWI793500B TW110101357A TW110101357A TWI793500B TW I793500 B TWI793500 B TW I793500B TW 110101357 A TW110101357 A TW 110101357A TW 110101357 A TW110101357 A TW 110101357A TW I793500 B TWI793500 B TW I793500B
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TW
Taiwan
Prior art keywords
photoresist
weight
stripper composition
removing photoresist
composition
Prior art date
Application number
TW110101357A
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English (en)
Chinese (zh)
Other versions
TW202129438A (zh
Inventor
宋賢宇
孫成旼
韓東一
朴泰文
李東勳
Original Assignee
南韓商Ｌｇ化學股份有限公司
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Application filed by 南韓商Ｌｇ化學股份有限公司 filed Critical 南韓商Ｌｇ化學股份有限公司
Publication of TW202129438A publication Critical patent/TW202129438A/zh
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Publication of TWI793500B publication Critical patent/TWI793500B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW110101357A 2020-01-20 2021-01-14 用於移除光阻的剝離劑組合物及使用其的光阻剝離方法 TWI793500B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0007112 2020-01-20
KR1020200007112A KR20210093496A (ko) 2020-01-20 2020-01-20 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법

Publications (2)

Publication Number Publication Date
TW202129438A TW202129438A (zh) 2021-08-01
TWI793500B true TWI793500B (zh) 2023-02-21

Family

ID=76809979

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110101357A TWI793500B (zh) 2020-01-20 2021-01-14 用於移除光阻的剝離劑組合物及使用其的光阻剝離方法

Country Status (3)

Country Link
KR (1) KR20210093496A (ko)
CN (1) CN113138544A (ko)
TW (1) TWI793500B (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200829696A (en) * 2006-09-25 2008-07-16 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
KR20090072546A (ko) * 2007-12-28 2009-07-02 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 어레이 기판의제조 방법
CN104903794A (zh) * 2013-05-07 2015-09-09 株式会社Lg化学 用于移除光致抗蚀剂的剥离剂组合物及使用其的光致抗蚀剂的剥离方法
TW201736988A (zh) * 2016-01-22 2017-10-16 易案愛富科技有限公司 光阻剝離劑組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196509A (ja) * 2000-12-25 2002-07-12 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
KR100718532B1 (ko) * 2005-08-13 2007-05-16 테크노세미켐 주식회사 반도체 제조용 감광성수지 제거제 조성물
JP4782200B2 (ja) * 2005-08-13 2011-09-28 テクノ セミケム シーオー．， エルティーディー． 半導体製造用感光性樹脂除去剤組成物
CN101750917A (zh) * 2009-09-25 2010-06-23 株式会社Lg化学 用于光致抗蚀剂的剥离剂组合物及剥离光致抗蚀剂的方法
KR101679030B1 (ko) * 2009-12-16 2016-11-23 주식회사 동진쎄미켐 레지스트 제거용 조성물
CN102012645A (zh) * 2010-12-24 2011-04-13 东莞市智高化学原料有限公司 一种光刻胶剥离液
CN104946429A (zh) * 2014-03-26 2015-09-30 安集微电子科技(上海)有限公司 一种低蚀刻的去除光阻蚀刻残留物的清洗液
KR101710171B1 (ko) * 2014-09-17 2017-02-24 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
CN105785725A (zh) * 2014-12-23 2016-07-20 安集微电子（上海）有限公司 一种光阻残留物清洗液
CN107085358A (zh) * 2017-06-23 2017-08-22 昆山欣谷微电子材料有限公司 用于去除含有背部晶圆金属化层的光刻胶剥离液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200829696A (en) * 2006-09-25 2008-07-16 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
KR20090072546A (ko) * 2007-12-28 2009-07-02 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 어레이 기판의제조 방법
TW200941158A (en) * 2007-12-28 2009-10-01 Dongjin Semichem Co Ltd Composition for removing photoresist and method of manufacturing an array substrate using the same
CN104903794A (zh) * 2013-05-07 2015-09-09 株式会社Lg化学 用于移除光致抗蚀剂的剥离剂组合物及使用其的光致抗蚀剂的剥离方法
TW201736988A (zh) * 2016-01-22 2017-10-16 易案愛富科技有限公司 光阻剝離劑組成物

Also Published As

Publication number Publication date
TW202129438A (zh) 2021-08-01
KR20210093496A (ko) 2021-07-28
CN113138544A (zh) 2021-07-20

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