TWI791448B - 光學模組製造方法 - Google Patents

光學模組製造方法 Download PDF

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Publication number
TWI791448B
TWI791448B TW106123539A TW106123539A TWI791448B TW I791448 B TWI791448 B TW I791448B TW 106123539 A TW106123539 A TW 106123539A TW 106123539 A TW106123539 A TW 106123539A TW I791448 B TWI791448 B TW I791448B
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Taiwan
Prior art keywords
light
opening
transmitting element
carrier
opaque layer
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TW106123539A
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English (en)
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TW201812366A (zh
Inventor
何信穎
陳盈仲
賴律名
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日月光半導體製造股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
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    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0015—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0018—Redirecting means on the surface of the light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0015—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/002—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0036—2-D arrangement of prisms, protrusions, indentations or roughened surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/0045—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0065—Manufacturing aspects; Material aspects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0075—Arrangements of multiple light guides
    • G02B6/0076—Stacked arrangements of multiple light guides of the same or different cross-sectional area
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0086—Positioning aspects
    • G02B6/0091—Positioning aspects of the light source relative to the light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0096—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the lights guides being of the hollow type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4256—Details of housings
    • G02B6/4257—Details of housings having a supporting carrier or a mounting substrate or a mounting plate
    • H—ELECTRICITY
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    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/14601—Structural or functional details thereof
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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    • H01L31/0232—Optical elements or arrangements associated with the device
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0025—Diffusing sheet or layer; Prismatic sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0028—Light guide, e.g. taper
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0051—Diffusing sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0055—Reflecting element, sheet or layer
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16196—Cap forming a cavity, e.g. being a curved metal foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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Abstract

本發明提供一種光學模組，其包括：一載體；一光發射器，其安置於該載體上；一光偵測器，其安置於該載體上；及一外殼，其安置於該載體上。該外殼界定曝露該光發射器之一第一開口及曝露該光偵測器之一第二開口。該光學模組進一步包括安置於該第一開口上之一第一光透射元件及安置於該第二開口上之一第二光透射元件。一第一不透明層安置於該第一光透射元件上，該第一不透明層界定一第一孔隙，且一第二不透明層安置於該第二光透射元件上，該第二不透明層界定一第二孔隙。

Description

光學模組製造方法
本發明係關於一種半導體封裝裝置，且係關於一種包括一或多個發光組件的半導體封裝裝置。
在光學感測器模組中，蓋之孔隙或外殼與光發射器或光偵測器的對準可影響感測器模組之效能。然而，自所要位置之偏移可能在製造光學感測器模組期間發生。舉例而言，晶粒相對於載體之安裝區域(安裝或置放晶粒之區域)的偏移(例如，移位)可大約介於25μm至50μm之範圍內，蓋之面板或外殼相對於載體之偏移可大約係100μm，且蓋之孔隙的偏移可大約係30μm。即使蓋之面板劃分成個別蓋，大約50μm之一或多個移位亦有可能在裝配晶粒及個別蓋時發生。可能需要減小此類偏移(例如，在製造光學感測器模組期間產生之偏移)。
另外，蓋或外殼之開口(例如，光通過之開口)(其由蓋或外殼界定)的大小對於一些光學定位應用(例如，近接感測器)準確地量測物件與光學感測器模組之間的距離係重要的。量測結果之準確性可在蓋或外殼之開口的大小減小時改良。然而，對於一些比較性技術可達成之蓋之開口的最小大小係大約250μm。因此，可能需要開發具有具有小開口(例如，小於大約 250μm之開口)之蓋或外殼的光學感測器模組。
根據本發明之一態樣，一種光學模組包括：一載體；一光發射器，其安置於該載體上；一光偵測器，其安置於該載體上；及一外殼，其安置於該載體上。該外殼界定曝露該光發射器之一第一開口及曝露該光偵測器之一第二開口。該光學模組進一步包括安置於該第一開口上之一第一光透射元件及安置於該第二開口上之一第二光透射元件。一第一不透明層安置於該第一光透射元件上，該第一不透明層界定一第一孔隙，且一第二不透明層安置於該第二光透射元件上，該第二不透明層界定一第二孔隙。
根據本發明之另一態樣，一種製造一光學模組之方法包括：提供一載體；將一光發射器置放於該載體上；將一光偵測器置放於該載體上；及將一外殼置放於該載體上，該外殼界定曝露該光發射器之一第一開口及曝露該光偵測器之一第二開口。該方法進一步包括：將一第一光透射元件置放於該第一開口上，該第一光透射元件包括界定一第一孔隙之一第一不透明層；及將一第二光透射元件置放於該第二開口上，該第二光透射元件包括界定一第二孔隙之一第二不透明層。
1:光學裝置
2:光學裝置
3A:半導體裝置
3B:半導體裝置
10:載體
11:第一電子組件
11e:發光區域
12:第二電子組件
12d:光偵測區域
13:第一光透射元件
13a:黏著層
13h:第一開口
14:第二光透射元件
14a:黏著層
14h:第二開口
15:蓋/外殼
15h1:第一腔體
15h2:第二腔體
15w:壁結構
16:第一不透明層
16h:第一孔隙
17:第二不透明層
17h:第二孔隙
23:第一光透射元件
23a:凸表面
24:第二光透射元件
24a:凸表面
31:第三不透明層
31h:開口
32:透鏡
33:濾光層
151:頂面
C1:中心
C2:中心
C3:中心
C4:中心
D1:寬度
D2:寬度
D3:寬度
D4:寬度
D5:寬度
D6:寬度
D7:寬度
D8:寬度
圖1說明根據本發明之一第一態樣的光學裝置之一些實施例的橫截面圖；圖2說明根據本發明之第一態樣的光學裝置之一些實施例的橫截面圖；圖3A說明根據本發明之一第二態樣的半導體裝置之一些實施例的橫截面圖； 圖3B說明根據本發明之第二態樣的半導體裝置之一些實施例的橫截面圖；且圖4A、圖4B及圖4C說明根據本發明之一些實施例之用於製造光學裝置的方法。
貫穿圖式及實施方式使用共同參考編號以指示相同或類似組件。結合隨附圖式，自以下實施方式，可最好地理解本發明。
相關申請案之交叉參考
本申請案主張2016年7月15日申請之美國臨時申請案第62/363,102號的權益及優先權，該臨時申請案之內容以全文引用的方式併入本文中。
圖1說明根據本發明之一第一態樣的光學裝置1之一些實施例的橫截面圖。光學裝置1包括載體10、第一電子組件11、第二電子組件12、第一光透射元件13、第二光透射元件14、蓋15、第一不透明層16及第二不透明層17。
載體10可包括(例如)印刷電路板，諸如紙基銅箔層合物、複合銅箔層合物或聚合物浸漬的基於玻璃纖維之銅箔層合物。載體10可包括互連結構，諸如複數個導電跡線或穿孔。在一些實施例中，載體10包括陶瓷材料或金屬板。在一些實施例中，載體10可包括基板，諸如有機基板或引線框。在一些實施例中，載體10可包括兩層基板，兩層基板包括核心層，及安置於載體10之上表面及下表面上的導電材料及/或結構。導電材料及/或結構可包括複數個跡線。
第一電子組件11安置於載體10上。第一電子組件11可包括發射晶粒或其他光學晶粒。舉例而言，第一電子組件11可包括發光二極體(LED)、雷 射二極體或可包括一或多個半導體層之另一裝置。該等半導體層可包括矽、碳化矽、氮化鎵或任何其他半導體材料。第一電子組件11可藉助於(例如)覆晶或線接合技術連接至載體10。在一些實施例中，第一電子組件11包括經由晶粒接合材料接合於載體10上之LED晶粒。該LED晶粒包括至少一個線接合墊。該LED晶粒藉由導電線電連接至載體10，該導電線之一端接合至LED晶粒之線接合墊，且該導電線之另一端接合至載體10之線接合墊。第一電子組件11具有面向第一光透射元件13之作用區(或發光區域)11e。
第二電子組件12安置於載體10上，且與第一電子組件11實體上分離。在一些實施例中，電子組件12可包括光偵測器，該光偵測器係(例如)PIN二極體(包括p型半導體區、純質半導體區及n型半導體區的二極體)或光二極體或光晶體管。電子組件12可(例如)藉助於覆晶或線接合技術連接至載體。第一電子組件12具有面向第二光透射元件14之作用區(或光偵測區域)12d。
蓋(或外殼)15安置於載體10上。蓋15具有安置於電子組件11與電子組件12之間的壁結構15w。蓋15係實質上不透明的，以防止由電子組件11發射之非所要光直接透射至電子組件12。
蓋15界定在第一電子組件11上方之第一開口13h及在第二電子組件12上方之第二開口14h。第一開口13h與第二開口14h彼此實體上分離。在一些實施例中，第一開口13h之寬度D1約等於或大於第一電子組件11之發光區域11e的面積(例如，大了約10%、大了約20%、大了約30%、大了大於約30%)，且第二開口14h之寬度D3約等於或大於第二電子組件12之光偵測區域12d的面積(例如，大了約10%、大了約20%、大了約30%、大了大於 約30%)。舉例而言，第一開口13h在載體10上之投影面積約等於或大於第一電子組件11之發光區域11e的面積，且第二開口14h在載體10上之投影面積約等於或大於第二電子組件12之光偵測區域12d的面積。舉例而言，第一開口13h經組態使得第一電子組件11之發光區域11e藉由第一開口13h而自蓋15曝露(例如，完全曝露)，此可有助於(例如，在製造期間或之後)準確地判定第一電子組件11之發光區域11e之中心的位置。另外，第二開口14h經組態使得第二電子組件12之光偵測區域12d藉由第二開口14h而自蓋15曝露(例如，完全曝露)，此可有助於(例如，在製造期間或之後)準確地判定第二電子組件12之光偵測區域12d之中心的位置。
蓋15界定在第一開口13h上方之經組態以容納第一光透射元件13的第一腔體15h1(例如，第一開口13h由蓋15之構成腔體15h1之底部的一部分界定)，且界定在第二開口14h上方之經組態以容納第二光透射元件14的第二腔體15h2(例如，第二開口14h由蓋15之構成腔體15h2之底部的一部分界定)。在一些實施例中，第一腔體15h1之寬度D5大於第一開口13h之寬度D1(例如，大了約10%、大了約20%、大了約30%、大了大於約30%)，且第二腔體15h2之寬度D6大於第二開口14h之寬度D3(例如，大了約10%、大了約20%、大了約30%、大了大於約30%)。第一腔體15h1與第二腔體15h2彼此實體上分離。
第一光透射元件13安置於第一腔體15h1內及第一開口13h上。第一光透射元件13經組態以允許透射自第一電子組件11發射之光。在一些實施例中，第一光透射元件13係透鏡。在一些實施例中，第一光透射元件13之寬度D7大於第一開口13h之寬度D1且小於或約等於第一腔體15h1之寬度D5。在一些實施例中，黏著層13a(例如，在第一光透射元件13之寬度D7 小於第一腔體15h1之寬度D5的一些實施例中)安置於第一光透射元件13與第一腔體15h1之側壁之間。在一些實施例中，黏著層13a包括熱固化材料或光學固化材料。
第二光透射元件14安置於第二腔體15h2內及第二開口14h上。第二光透射元件14與第一光透射元件13實體上分離。第二光透射元件14經組態以允許透射由第二電子組件12接收之光。在一些實施例中，第二光透射元件14係透鏡。在一些實施例中，第二光透射元件14之寬度D8大於第一開口14h之寬度D3且小於或約等於第二腔體15h2之寬度D6。在一些實施例中，黏著層14a(例如，在第一光透射元件14之寬度D8小於第二腔體15h2之寬度D6的一些實施例中)安置於第二光透射元件13與第二腔體15h2之側壁之間。
第一不透明層16安置於第一光透射元件13上。在一些實施例中，第一不透明層16可包括光吸收層、油墨、光刻膠或金屬層。在一些實施例中，第一不透明層16自蓋15之頂面151凹入。第一不透明層16界定第一孔隙16h。由第一電子組件11發射之光選擇性地通過第一孔隙16h，且由第一電子組件11發射之其他光實質上由第一不透明層16阻擋或吸收。第一孔隙16h之中心與第一電子組件11之發光區域11e的中心實質上對準。第一孔隙16h之寬度D2小於第一開口13h之寬度D1。在一些實施例中，第一孔隙16h之寬度小於約250μm。
第二不透明層17安置於第二光透射元件14上。第二不透明層17與第一不透明層16實體上分離。在一些實施例中，第二不透明層17可包括光吸收層、油墨、光刻膠或金屬層。在一些實施例中，第二不透明層17自蓋15之頂面151凹入。第二不透明層17界定第二孔隙17h。朝向第二電子組件12發 射之光選擇性地通過第二孔隙17h，且由第二電子組件12發射之其他光實質上由第二不透明層17阻擋或吸收。第二孔隙17h之中心與第二電子組件12之光偵測區域12d的中心實質上對準。第二孔隙17h之寬度D4小於第二開口14h之寬度D3。在一些實施例中，第二孔隙17h之寬度小於約250μm。
在比較性光學模組中，孔隙藉由機器直接形成於蓋中；然而，由於一些此類製程之限制，蓋之孔隙的大小不小於約250μm。根據圖1中所展示之一些實施例，分別藉由在第一光透射元件13及第二光透射元件14上印刷或塗佈油墨來形成第一不透明層16及第二不透明層17。第一孔隙16h及第二孔隙17h係藉由微影技術形成，且因此孔隙之大小可易於按比例縮小(例如，縮小至小於約250μm)。藉由小型化此類孔隙，可減少可能由光偵測器無意中偵測到之非所要光(例如，來自外部環境之光)，此可有助於減小由光學模組偵測到之物件的所量測或偵測到之位置與真實位置之間的偏離，因此增大光學模組之準確性。
在一些實施例中，包括光透射元件及不透明層之面板可置放於蓋上以覆蓋光發射器及光偵測器兩者。然而，由於不透明層之孔隙的相對位置可固定，因此可能難以同時控制不透明層之孔隙與光發射器或光偵測器的對準。舉例而言，不透明層之一個孔隙可與光發射器對準，但另一孔隙可與光偵測器不對準。根據圖1中所展示之實施例，光透射元件13、14及不透明層16、17個別地安置於第一電子組件11(例如，光發射器)上方及第二電子組件12(例如，光偵測器)上方。可個別地偵測且對準孔隙16h、17h之各別中心及光發射器11之發光區域11e的中心及光偵測器12之光偵測區域12d的中心，此可有助於減小對準偏移及增加光學裝置1之準確性。
圖2說明根據本發明之第一態樣的光學裝置2之一些實施例的橫截面 圖。光學裝置2類似於圖1中所展示之光學裝置1，惟光學裝置2之第一光透射元件23及第二光透射元件24係平凸透鏡除外。如圖2中所展示，第一光透射元件23之凸表面23a面向第一電子組件11，且第二光透射元件24之凸表面24a面朝第二電子組件12。凸表面23a可突出至由蓋15界定之孔隙13h中。凸表面24a可突出至由蓋15界定之孔隙14h中。平凸透鏡可增大到達電子組件之光的密度，此可有助於改良光學裝置2之效能。
圖3A說明根據本發明之一第二態樣的半導體裝置3A之一些實施例的橫截面圖。半導體裝置3A包括如圖1中所展示之光學裝置1、第三不透明層31及透鏡32。由短劃線描繪之光錐展示可透射至光學裝置1之電子組件或自該電子組件透射之光的一些可能路徑。在一些實施例中，替代，或除了光學裝置1以外，還可藉由圖2中所展示之光學裝置2實施半導體裝置3A。
第三不透明層31安置於光學裝置1上。第三不透明層31界定允許光通過之開口31h。透鏡32安置於第三不透明層31上。在一些實施例中，透鏡32可包括或可係蜂巢式電話之玻璃部分(例如，玻璃面板)、平板電腦、筆記型電腦、相機或裝備有近接感測器之其他電子裝置。
圖3B說明根據本發明之第二態樣的半導體裝置3B之一些實施例的橫截面圖。半導體裝置3B類似於圖3A中所展示之半導體裝置3A，惟第二不透明層31由濾光層33替換除外。由短劃線描繪之光錐展示可透射至光學裝置1之電子組件或自該電子組件透射之光的一些可能路徑。濾光層33不界定開口(例如，在光學裝置1之孔隙上方不含開口)。濾光層33經組態以允許具有預定波長之光通過。在一些實施例中，濾光層33結合第三不透明層31予以實施。
圖4A、圖4B及圖4C說明根據本發明之一些實施例之用於製造如圖1 中所展示之光學裝置1的方法。儘管在下文中關於複數個組件中之每一者描述一些製程、操作或步驟，但可關於多個組件中之一者或關於介於一個與完全複數個組件之間的某一數目而選擇性地執行彼等製程、操作或步驟中之任一者。
參考圖4A，提供載體10。第一電子組件11(例如，光發射器)及第二電子組件12(例如，光偵測器)置放於載體10上。第一電子組件11與第二電子組件12彼此實體上分離。
蓋(或外殼)15置放於載體10上。蓋15經配置以使得蓋15之壁結構15w安置於電子組件11與電子組件12之間，蓋15之第一開口13h安置於第一電子組件11上方，且蓋15之第二開口14h安置於第二電子組件12上方。在一些實施例中，第一開口13h之寬度D1約等於或大於第一電子組件11之發光區域11e的面積(例如，大了約10%、大了約20%、大了約30%、大了大於約30%)，且第二開口14h之寬度D3約等於或大於第二電子組件12之光偵測區域12d的面積(例如，大了約10%、大了約20%、大了約30%、大了大於約30%)。舉例而言，第一開口13h經組態使得第一電子組件11之發光區域11e藉由第一開口13h而自蓋15曝露，此可有助於在後續操作中準確地判定第一電子組件11之發光區域11e之中心的位置。另外，第二開口14h經組態使得第二電子組件12之光偵測區域12d藉由第二開口13h而自蓋15曝露，此可有助於在後續操作中準確地判定第二電子組件12之光偵測區域12d之中心的位置。第一開口13h與第二開口14h彼此實體上分離。
蓋15具有在第一開口13h上方之第一腔體15h1及在第二開口14h上方之第二腔體15h2。在一些實施例中，第一腔體15h1之寬度D5大於第一開口13h之寬度D1，且第二腔體15h2之寬度D6大於第二開口14h之寬度D3。第 一腔體15h1與第二腔體15h2彼此實體上分離。
在一些製造製程實施例中，對於置放蓋15(例如，置放於載體10上)存在第一偏移容限，且對於置放第一電子組件11或第二電子組件12(例如，置放於載體10上)存在第二偏移容限。第一開口13h之寬度D1及第二開口14h之寬度D3中之至少一者大於或約等於以下各者之總和：第一偏移容限、第二偏移容限與(i)第一電子組件11之發光區域11e之面積的寬度或(ii)第二電子組件12之光偵測區域12d之面積的寬度。
參考圖4B，提供第一光透射元件13及第二光透射元件14。在一些實施例中，藉由將透射元件之面板劃分成多個個別光透射元件來提供第一光透射元件13及第二光透射元件14。在一些實施例中，第一光透射元件13之寬度D7大於第一開口13h之寬度D1，且小於或約等於第一腔體15h1之寬度D5(例如，係小了約10%、小了約20%、小了約30%或小了約小於30%)。第二光透射元件14之寬度D8大於第一開口14h之寬度D3及小於或約等於第二腔體15h2之寬度D6(例如，係小了約10%、小了約20%、小了約30%或小了約小於30%)。
第一不透明層16及第二不透明層17分別形成於第一光透射元件13及第二光透射元件14上。在一些實施例中，可藉由在第一光透射元件13及第二光透射元件14上鍍敷或塗佈油墨來形成第一不透明層16及第二不透明層17。接著形成第一孔隙16h及第二孔隙17h以穿透第一不透明層16及第二不透明層17及曝露第一光透射元件13及第二光透射元件14之一部分。在一些實施例中，第一孔隙16h及第二孔隙17h可藉由光刻法、化學蝕刻、雷射鑽孔或其他適合製程形成。在一些實施例中，第一孔隙16h之寬度D2小於第一開口13h之寬度D1，且第二孔隙17h之寬度D4小於第二開口14h之寬度 D3。在一些實施例中，第一孔隙16h及第二孔隙17h中之每一者的寬度小於約250μm。
可偵測或計算第一孔隙16h之中心C1及第二孔隙17h之中心C2。第一孔隙16h之中心C1或第二孔隙17h之中心C2由影像擷取裝置ICD及處理器判定。可以類似方式執行偵測或計算第一電子組件11之發光區域11e的中心C3及第二電子組件12之光偵測區域12d的中心C4。舉例而言，第一電子組件11之發光區域11e的中心C3或第二電子組件12之光偵測區域12d的中心C4由影像擷取裝置ICD及處理器判定。
參考圖4C，第一孔隙16h之中心C1與第一電子組件11之發光區域11e的中心C3對準，且第一光透射元件13連同第一不透明層16藉由(例如)取放操作安置於第一腔體15h1內。第二孔隙17h之中心C2與第二電子組件12之光偵測區域12d的中心C4對準，且第二光透射元件14連同第二不透明層17藉由(例如)取放操作安置於第二腔體15h2內。在一些實施例中，第一不透明層16及第二不透明層17自蓋15之頂面151凹入。
在一些實施例中，在置放第一光透射元件13及第二光透射元件14之前，可將黏著層13a鄰近於第一腔體15h1及第二腔體15h2之側壁置放，此舉可(例如，在第一光透射元件13之寬度D7及第二光透射元件14之寬度D8小於第一腔體15h1之寬度D5及第二腔體15h2之寬度D6的實施中)有助於緊固第一光透射元件13及第二光透射元件14。在一些實施例中，黏著層13a包括熱固化材料或光學固化材料。
如本文中所使用，術語「實質上」、「實質」、「大約」及「約」用以描述及考慮小的變化。舉例而言，當結合數值使用時，該等術語可指小於或等於彼數值之±10%的變化範圍，諸如，小於或等於±5%、小於或等於 ±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%或者小於或等於±0.05%之變化範圍。作為另一實例，薄膜或層之厚度「實質上均勻」可指薄膜或層之平均厚度之小於或等於±10%(諸如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%)的標準差。術語「實質上共面」可指兩個表面沿著同一平面處於50μm內(諸如，沿著同一平面處於40μm內、30μm內、20μm內、10μm內或1μm內)。若(例如)兩個組件重疊或在200μm、150μm內、100μm內、50μm內、40μm內、30μm內、20μm內、10μm內或1μm內，則兩個組件可被視為「實質上對準」。若兩個表面或組件之間的角係(例如)90°±10°(諸如，±5°、±4°、±3°、±2°、±1°、±0.5°、±0.1°或±0.05°)，則兩個表面或組件可被視為「實質上垂直」。當結合事件或情形使用時，術語「實質上」、「實質」、「大約」及「約」可指事件或情形精確發生之情況以及事件或情形近似發生之情況。
在對一些實施例之描述中，提供「在」另一組件「上」之一組件可涵蓋前一組件直接在後一組件上(例如，與後一組件實體接觸)的狀況以及一或多個介入組件位於前一組件與後一組件之間的狀況。
另外，有時在本文中按範圍格式呈現量、比率及其他數值。可理解，此類範圍格式用於便利及簡潔起見，且應被靈活地理解為不僅包括明確地指定為範圍限制之數值，而且包括涵蓋於該範圍內之所有個別數值或子範圍，如同明確地指定每一數值及子範圍一般。
儘管已參考本發明之特定實施例描述且說明本發明，但此等描述及說明並不限制本發明。熟習此項技術者可清楚地理解，可進行各種改變，且 可在實施例內替代等效元件而不會脫離如由所附申請專利範圍所界定之本發明的真實精神及範疇。說明可不必按比例繪製。歸因於製造製程之類中的變數，本發明中之藝術再現與實際設備之間可存在區別。可存在並未特定說明之本發明的其他實施例。應將本說明書及圖式視為說明性而非限制性的。可作出修改，以使特定情形、材料、物質組成、方法或製程適應於本發明之目標、精神及範疇。所有此類修改均意欲處於此處所附之申請專利範圍的範疇內。儘管已參考按特定次序執行之特定操作描述本文中所揭示的方法，但可理解，在不脫離本發明之教示的情況下，可組合、細分或重新定序此等操作以形成等效方法。因此，除非在本文中特定指示，否則操作之次序及分組並非本發明之限制。
1:光學裝置
10:載體
11:第一電子組件
11e:發光區域
12:第二電子組件
12d:光偵測區域
13:第一光透射元件
13a:黏著層
13h:第一開口
14:第二光透射元件
14a:黏著層
14h:第二開口
15:蓋/外殼
15h1:第一腔體
15h2:第二腔體
15w:壁結構
16:第一不透明層
16h:第一孔隙
17:第二不透明層
17h:第二孔隙
151:頂面
D1:寬度
D2:寬度
D3:寬度
D4:寬度
D5:寬度
D6:寬度
D7:寬度
D8:寬度

Claims (13)

  1. 一種製造一光學模組之方法，該方法包含：(a)提供一載體；(b)將一光發射器置放於該載體上；(c)將一光偵測器置放於該載體上；(d)將一外殼置放於該載體上，該外殼界定曝露該光發射器之一第一開口及曝露該光偵測器之一第二開口；(e)藉由一第一取放操作將一第一光透射元件置放於該第一開口上，該第一光透射元件包含界定一第一孔隙之一第一不透明層；及(f)藉由一第二取放操作將一第二光透射元件置放於該第二開口上，且使該第二光透射元件透過該外殼與該第一光透射元件隔開，該第二光透射元件包含界定一第二孔隙之一第二不透明層，其中分別地執行該第一取放操作及該第二取放操作以分別地對齊並放置該第一光透射元件及該第二光透射元件。
  2. 如請求項1之方法，其中該操作(e)進一步包含判定該第一孔隙之一中心相對於該光發射器之一發光區域之一中心的一對準，且該操作(f)進一步包含判定該第二孔隙之一中心相對於該光偵測器之一光偵測區域之一中心的一對準。
  3. 如請求項2之方法，其中判定該對準係使用一影像擷取裝置及一處理 器。
  4. 如請求項1之方法，其進一步包含在該操作(e)之前劃分一光透射元件之一面板以形成該第一光透射元件及該第二光透射元件。
  5. 如請求項1之方法，其中該外殼界定：一第一腔體，其經組態以容納該第一光透射元件；及一第二腔體，其經組態以容納該第二光透射元件。
  6. 如請求項5之方法，其進一步包含：在該第一光透射元件與該第一腔體之一側壁之間形成一黏著層；及在該第二光透射元件與該第二腔體之一側壁之間形成一黏著層。
  7. 如請求項1之方法，其中該第一不透明層或該第二不透明層之一表面自該外殼之一頂面凹入。
  8. 如請求項1之方法，其中該第一光透射元件與該第二光透射元件實體上間隔開。
  9. 如請求項1之方法，其中該第一不透明層與該第二不透明層實體上間隔開。
  10. 如請求項1之方法，其中該第一開口在該載體上之一投影面積大於該 光發射器之一發光區域的一面積，且該第二開口在該載體上之一投影面積大於該光偵測器之一光偵測區域的一面積。
  11. 如請求項1之方法，其中將該外殼置放於該載體上具有一第一偏移容限，且將該光發射器或該光偵測器置放於該載體上具有一第二偏移容限，且該第一開口或該第二開口之一寬度大於或等於以下各者之一總和：該第一偏移容限、該第二偏移容限與(i)該光發射器之發光區域的一寬度或(ii)該光偵測器之該光偵測區域的一寬度。
  12. 如請求項1之方法，其中該第一不透明層及該第二不透明層係光吸收層或金屬層。
  13. 如請求項1之方法，其中該外殼界定一第一腔體，其經組態以容納該第一光透射元件，該方法進一步包括：在置放該第一光透射元件於該第一開口上之前，將一黏著層置放於該第一腔體的一壁部分。
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