TWI788399B - 磊晶晶圓之製造方法 - Google Patents
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Abstract
本發明提供一種磊晶晶圓之製造方法,準備背面經研磨之矽半導體基板,將所準備之基板洗淨之後,將多片基板作為1批次放入至基板保管部2。以使基板保管部2之氛圍中的NO2
與NO3
之合計濃度成為140 ng/m3
以下的方式進行管理。將保管於基板保管部2中之基板逐片搬送至反應爐5而使矽磊晶層氣相生長。藉此,能夠抑制依存於自基板洗淨後之經過時間的背面暈環之產生,製造高品質的磊晶晶圓。
Description
本發明係關於一種於矽半導體基板上形成矽磊晶層而獲得磊晶晶圓之方法。
先前以來,作為用於矽半導體基板等半導體基板之製造步驟之基板處理裝置,已知CVD(Chemical Vapour Deposition)裝置等。作為矽半導體基板之磊晶處理之一例,開發出一種於矽半導體基板之正面使由單晶矽所構成之磊晶層氣相磊晶生長的方法。作為該製造方法,將基板水平配置於收納於磊晶生長用反應爐之基座上,其後,同時使基座以垂直之旋轉軸為中心旋轉,且藉由鹵素燈等熱源將基板進行高溫加熱(1000℃~1200℃),並流通矽源氣體。藉此,於基板正面析出由反應氣體之熱分解(及還原)而產生之矽,於基板正面由單晶矽所構成之磊晶層生長。
此處,通常,磊晶晶圓之製造係於被保持為高潔淨度之無塵室內進行,關於無塵室,於專利文獻1、2中記載如下:將來自無塵室等潔淨作業空間之排氣取入並進行淨化之後循環供給至該潔淨作業空間時,作為該淨化,使氨、氮氧化物(NOx
)、硫氧化物(SOx
)等各種污染物質為固定濃度以下。例如就作為污染物質之一之氮氧化物(NOx
)而言,記載有使其為1 ppb以下(專利文獻1)、0.1 ppb以下(專利文獻2)。 先前技術文獻 專利文獻
專利文獻1:日本特開2009-138977號公報 專利文獻2:日本特開2009-138978號公報
此外,於矽半導體基板上形成矽磊晶層時,於基板背面為矽研磨面之情形時,藉由矽源氣體朝背面之轉入等而於背面亦有微量之多晶矽(Poly-Si)沈積。認為該微量多晶矽之產生於基板背面內有不均之情形時會產生被稱為暈環之模糊不清、面粗糙。背面暈環之產生有如下傾向,即,隨著自基板洗淨後至進行磊晶反應為止之時間變長而變得顯著,且暈環圖案亦變濃。背面暈環之產生導致由外觀不良引起之矽磊晶步驟之良率惡化,從而成為課題。即便於專利文獻1、2所提出之在無塵室內進行磊晶晶圓之製造,仍存在上述課題,即,隨著自基板洗淨後至進行磊晶反應為止之時間變長,背面暈環變得顯著,且暈環圖案亦變濃。
本揭示係鑒於上述課題而完成,其目的在於提供一種能夠抑制依存於自基板洗淨後之經過時間之背面暈環的產生而製造高品質的磊晶晶圓之方法。
本發明者推測出,背面暈環之產生根據基板之暴露時間(自洗淨後至磊晶生長為止之時間)而不同,且因暴露環境的差異引起之暈環產生傾向之差異而受基板之暴露氛圍之影響。因此發現,於評價暴露氛圍時,暴露氛圍中之NO2
及NO3
之濃度與背面暈環之產生相關,尤其藉由使用被保管於NO2
與NO3
之濃度之合計為140 ng/m3
以下之暴露氛圍中之背面研磨矽基板而可抑制背面暈環之產生,從而完成了本發明。
即,本揭示之一態樣之磊晶晶圓之製造方法係如下製造方法,即,將經背面研磨之矽半導體基板洗淨後保管於NO2
與NO3
之濃度之合計為140 ng/m3
以下之環境氛圍中,於該矽半導體基板上使矽磊晶層氣相生長。
根據本揭示之一態樣,能夠製造抑制了背面暈環之產生之高品質的磊晶晶圓。
又,更佳為於NO2
與NO3
之濃度之合計為10 ng/m3
以下之環境氛圍中保管矽半導體基板。藉此,於矽半導體基板上使矽磊晶層氣相生長時,可進一步抑制基板背面之霧度等級,可進一步抑制背面暈環之產生。
以下,同時參照圖式並說明本發明之實施形態。於本實施形態中,對將本發明應用於使用單片式磊晶生長裝置之磊晶晶圓的製造之例進行說明。首先,參照圖1對單片式磊晶生長裝置之構成進行說明。
圖1之單片式磊晶生長裝置1具備:基板保管部2,其將洗淨後之矽半導體基板W(以下,有時簡記為基板W)以多片為1批次之方式保管;搬送路3,其以與上述基板保管部2鄰接之方式而設置;搬送機器人4,其設置於搬送路3內且將保管於基板保管部2之1片基板W搬送至下述反應爐5;反應爐5,其以與搬送路3鄰接之方式而設置,用以進行於由搬送機器人4所搬送之基板W之正面上使矽磊晶層氣相生長之反應;基座6,其設置於反應爐5內,且以使基板W之正面及背面成水平之方式載置基板W;及燈7,其設置於反應爐5之周圍,對反應爐5內進行加熱。又,磊晶生長裝置1亦具備驅動部(未圖示),其於磊晶生長時使基座6旋轉。
基座6形成為圓盤狀,且以上表面成水平之方式由支軸8支持。於基座6之上表面,形成有用以載置基板W之槽部61。槽部61形成為直徑較基板W稍大之圓形。又,槽部61例如以僅與基板W之背面外周部接觸、且與除此以外之基板背面部位之間形成間隙之方式形成為階差形狀。再者,槽部61亦可以與基板W之背面整面接觸之方式而形成。
於基板保管部2與搬送路3之間設置有閘閥(未圖示)。於閘閥關閉時,基板保管部2與搬送路3之間被阻斷而無法進行基板W之出入。於閘閥打開時,基板保管部2與搬送路3之間導通而能夠進行基板W之出入。同樣地,搬送路3與反應爐5之間亦設置有用以切換其等之導通、阻斷之閘閥(未圖示)。
基板保管部2、搬送路3及反應爐5與大氣阻斷。又,為了防止基板保管部2中混入異物(水分、氧、金屬等),而於基板保管部2設置用以置換為氮氣等不活性氣體之構成。具體而言,連接有對基板保管部2內抽真空之泵(未圖示)、或向基板保管部2內導入氮氣等不活性氣體之氣體管(未圖示)。該氣體管連接於儲藏氮氣等不活性氣體(基板保管部2之氛圍氣體)之容器(未圖示)。同樣地,於搬送路3亦連接有導入氮氣等不活性氣體之氣體管(未圖示)。再者,圖1中,圖示有放入有純水等捕集液之採集器10、及將基板保管部2內之氛圍之一部分導引至採集器10內之管11,以評價基板保管部2內之氛圍。
繼而,對本實施形態之磊晶晶圓之製造順序進行說明。圖2係表示該順序之流程圖。首先,準備矽半導體基板W(S1)。準備之基板W之直徑、結晶方位、導電型、電阻率等並未特別限定。作為準備之基板W,準備對正面、背面之兩者實施鏡面研磨加工後之拋光晶圓。
對拋光晶圓之一般之製造方法進行說明,使用丘克拉斯基(Czochralski,CZ)法等製造具有特定之結晶方位之單晶錠(單晶生長步驟)。對所製造之單晶錠之側面進行磨削而調整外徑,於單晶錠之外周形成表示結晶方位之1個凹口(圓筒磨削步驟)。將單晶錠沿著特定之結晶方位切片成薄圓板狀之晶圓(切片步驟),為了防止該切片後之晶圓之破裂、缺損而對其外周部進行倒角(倒角步驟)。其後,將倒角後之晶圓之兩面同時磨削而使其平坦化(雙頭磨削步驟),將殘留於倒角及磨削後之晶圓上之加工變形進行蝕刻而去除(蝕刻步驟)。進而,對晶圓正面及背面進行研磨而使其鏡面化(研磨步驟)。經過該等步驟獲得拋光晶圓。
繼而,對所準備之基板W(拋光晶圓)進行由SC-1洗淨及SC-2洗淨等所構成之RCA洗淨等洗淨,自基板W去除研磨劑或異物等(S2)。
繼而,將洗淨後之基板W以多片為1批次之方式置於基板保管部2,於該基板保管部2中待機直至進行磊晶反應(S3)。此時,以使基板保管部2內之氛圍中的NO2
與NO3
之濃度之合計成為140 ng/m3
以下的方式管理該氛圍。例如若以使NO2
、NO3
之各濃度成為70 ng/m3
以下之方式進行管理,則NO2
與NO3
之濃度之合計成為140 ng/m3
以下。再者,只要NO2
、NO3
之合計濃度成為140 ng/m3
以下,則NO2
、NO3
之一者之濃度亦可超過70 ng/m3
。再者,更佳為使基板保管部2內之氛圍中的NO2
與NO3
之合計濃度為10 ng/m3
以下。其原因在於,如下述實施例所示,藉由使合計濃度為10 ng/m3
以下,可進一步抑制所獲得之磊晶晶圓之背面之霧度等級。
再者,上述合計濃度是否成為140 ng/m3
以下例如可由以下方法而確認。即,使基板保管部2內之氛圍之一部分藉由泵(未圖示)等通過管11而通氣至採集器10內之純水等捕集液而溶入至該捕集液。藉由離子層析分析等方法測定該捕集液中的NO2 -
離子濃度及NO3 -
離子濃度。將所獲得的NO2 -
離子濃度及NO3 -
離子濃度以分別成為表示基板保管部2之氛圍中的NO2
濃度及NO3
濃度者的方式進行換算,確認換算後之NO2
濃度及NO3
濃度之合計為140 ng/m3
以下。
關於NO2
、NO3
濃度之降低,考慮例如於利用泵對基板保管部2內抽真空之後,將氮氣等高純度不活性氣體導入至基板保管部2內。又,亦考慮將捕集、去除基板保管部2之循環氛圍中之NOx
之化學過濾器設置於氣體導入管,改善循環氛圍之純度。
繼而,自保管於基板保管部2之基板W中選擇1片,並將所選擇之基板W搬送至反應爐5(S4)。具體而言,分別打開基板保管部2與搬送路3之間之閘閥、及搬送路3與反應爐5之間之閘閥,使搬送機器人4將保管於基板保管部2之1片基板W搬送至反應爐5,且使所搬送之基板W載置於基座6之槽部61。其後,關閉各閘閥。於圖1之例中,表示於基板保管部2設置有於上下方向收容基板W之盒(cassette)(未圖示),且自收容於該盒下側之基板W依序進行反應之例。再者,搬送路3內之氛圍例如被置換為氮氣等不活性氣體。
繼而,於反應爐5中在基板W之正面上藉由氣相生長而形成矽單晶膜(S5)。具體而言,使基座6旋轉,同時藉由燈7將基板W加熱至熱處理溫度(例如1050℃~1200℃)。繼而,向反應爐5內導入氫氣,進行用以去除形成於基板W之正面之自然氧化膜之氣相蝕刻。再者,該氣相蝕刻一直進行至即將進行下一步驟即氣相生長之前。繼而,將基板W降溫至氣相生長溫度(例如1050℃~1180℃),於反應爐5內,藉由分別大致水平地供給氣相生長氣體即原料氣體(例如三氯矽烷)、載氣(例如氫)及視需要之摻雜氣體(例如PH3
)而使既定膜厚之矽單晶膜於基板W之正面上氣相生長,形成矽磊晶晶圓。
其後,將反應爐5降溫至取出溫度(例如650℃)之後,打開閘閥,藉由搬送機器人4將矽磊晶晶圓自反應爐5搬出(S6)。接著,將搬出之矽磊晶晶圓搬送至冷卻腔室(未圖示),於該冷卻腔室中冷卻之後,搬出至磊晶生長裝置1外。
對保管於基板保管部2之1批次量之基板W依序逐片實施上述S4~S6之步驟。
以上為本實施形態之磊晶晶圓之製造順序。此處,習知,批次初期之基板中並未產生背面暈環,但隨著成為批次後半(隨著於基板保管部中之保管時間變長)而有產生背面暈環之傾向。另一方面,於本實施形態中,使用被保管於氛圍中的NO2
、NO3
之合計濃度被管理為140 ng/m3
以下的基板保管部2之基板,故如下述實施例所示,即便於基板保管部2中之保管時間變長,亦可獲得抑制了背面暈環之產生(霧度等級)之高品質的磊晶晶圓。
再者,若對藉由降低基板保管部2之氛圍中存在之NO2
、NO3
而可抑制背面暈環之機制進行推測,則由於基板保管部2之氛圍中存在NO2
、NO3
,故基板之正面、背面暴露於氧化性氛圍而逐漸進行氧化,於正面、背面形成氧化膜。關於氧化膜之附著方式,預測根據氛圍氣體朝基板之流動方式、與基板之接觸方式,於面內出現氧化膜較厚之部位及較薄之部位。該氧化膜於磊晶生長前之熱處理中不會完全被去除,於已去除之部位及殘留有氧化膜之部位,基板背面之多晶矽之附著量出現不均,由此產生暈環。因此,認為藉由以NO2
與NO3
之合計濃度成為140 ng/m3
以下之方式管理基板保管部2之氛圍,可抑制基板保管部2內成為氧化性氛圍,且可抑制暈環產生。 實施例
以下,舉出實施例及比較例對本發明更具體地進行說明,但該等並非限定本發明。
(實施例、比較例) 於與圖1相同構成之單片式磊晶生長裝置中,使用直徑300 mm、主表面之面方位(100)之P型矽單晶基板進行成膜。關於矽單晶基板,準備背面研磨之基板。其後,將分別準備之基板洗淨後於作為實施例之以NO2
與NO3
之合計濃度成為140 ng/m3
以下之方式管理氛圍之2例的基板保管部、及作為比較例的NO2
與NO3
之合計濃度超過140 ng/m3
之氛圍之2例的基板保管部中暴露6小時,於同一裝置中進行磊晶生長。此時,利用離子層析分析進行基板保管部之NO2
濃度及NO3
濃度之測定。具體而言,利用泵將基板保管部之氛圍提昇,通氣至採集器內之純水而溶入其中,利用離子層析測定該純水中之NO2 -
離子濃度及NO3 -
離子濃度。將所獲得之純水中的NO2 -
濃度及NO3 -
離子濃度以分別成為表示基板保管部之氛圍中的NO2
濃度及NO3
濃度者的方式進行換算。再者,假定上述6小時為1批次之後半之基板之氛圍暴露時間。
於磊晶層成膜中,將原料氣體設為TCS(三氯矽烷),將TCS之流量設為10 L/min,將作為載氣之氫氣之流量設為50 L/min,進行膜厚10 μm之非摻雜層之反應。接著,進行反應後之磊晶晶圓之背面外觀評價、霧度等級評價。再者,所謂霧度係於磊晶晶圓之正面、背面產生之微小凹凸,若於暗室內使用聚光燈等觀察磊晶晶圓之正面、背面,則光漫反射而看上去產生白霧。霧度等級係與背面暈環之產生相關之指標,若霧度等級較大,則背面暈環產生之可能性較高。
背面外觀評價係於暗室中在聚光燈下(20萬勒克司)進行背面觀察、評價。霧度等級係利用KLATencor公司之微粒計數器SP1之DW(Darkfield Wide)模式所獲得之DWN-霧度峰值而進行評價。
又,作為參考例,亦準備於基板洗淨後10分鐘以內進行了磊晶反應之磊晶晶圓,進行相同評價。於參考例中,在實施例之2例及比較例之2例之各NO2
濃度及NO3
濃度之暴露氛圍中,於基板洗淨後10分鐘以內進行磊晶反應。
將上述評價順序示於圖3。於圖3中,實施例之S31之步驟與圖2之S3之步驟相同,即,以基板保管部之氛圍中的NO2
濃度及NO3
濃度之合計成為140 ng/m3
以下的方式進行管理。相對於此,於比較例之S31之步驟中,以基板保管部之氛圍中的NO2
濃度及NO3
濃度之合計超過140 ng/m3
的方式進行管理。又,於圖3中,於S6之步驟之後追加S7之步驟(上述背面外觀評價及霧度等級評價)。除此以外,與圖2之順序相同。
(參考例) 於參考例中,於任一NO2
濃度及NO3
濃度,晶圓背面均未確認到被認為暈環之模糊不清,DWN-霧度峰值為10 ppm左右。
(實施例) 實施例中之藉由離子層析分析獲得之NO2
/NO3
濃度(即,將溶入有氛圍之純水中的NO2 -
/NO3 -
離子濃度以成為表示基板保管部之氛圍中的NO2
/NO3
濃度者之方式進行換算所得者)於第1例中為1.2/1.5(ng/m3
),於第2例中為54.1/63.2(ng/m3
)。於背面外觀評價中,對於任一晶圓均未確認到被認為暈環之模糊不清,DWN-霧度峰值亦為10 ppm以下,與參考例為同等之品質。尤其第1例表現出更低之值(8 ppm以下),結果更佳。
(比較例) 比較例中之藉由離子層析分析獲得之NO2
/NO3
濃度(即,將溶入有氛圍之純水中的NO2 -
/NO3 -
離子濃度以成為表示基板保管部之氛圍中的NO2
/NO3
濃度者之方式進行換算所得者)於第1例中為161.0/122.7(ng/m3
),於第2例中為451.2/223.8(ng/m3
)。背面外觀評價中對於任一晶圓均確認到了被認為暈環之模糊不清,DWN-霧度峰值於第1例中為33.5 ppm,於第2例中為59.8 ppm,與參考例相比惡化。
將實施例與比較例中之NOx
離子濃度與DWN-霧度峰值之關係示於圖4、圖5。圖4表示NO2
濃度與DWN-霧度峰值之關係,圖5表示NO3
濃度與DWN-霧度峰值之關係。由圖4、圖5可知,隨著NO2
、NO3
之減少,DWN-霧度峰值降低,於70 ng/m3
附近以下與參考例相同,DWN-霧度峰值無變動。
如此,表現為藉由使用本發明,即便為於基板保管部中之保管時間(氛圍暴露時間)較長之磊晶晶圓亦能夠降低背面暈環,尤其藉由使基板保管部之氛圍中的NO2
及NO3
之合計濃度為140 ng/m3
以下(更佳為10 ng/m3
以下)而可有效地實施背面暈環抑制。
再者,本發明並不限定於上述實施形態。上述實施形態為例示,具有與本發明之申請專利範圍所記載之技術思想實質上相同之構成、且發揮相同之作用效果者無論如何均包含於本發明之技術範圍。例如基板尺寸並不限於300 mm,對於200 mm以下之基板、或大於300 mm之基板亦可應用。又,只要為成膜矽之氣相生長裝置,則並不限於單片式磊晶生長爐,對於批量式等亦可應用。
1‧‧‧單片式磊晶生長裝置2‧‧‧基板保管部3‧‧‧搬送路4‧‧‧搬送機器人5‧‧‧反應爐6‧‧‧基座61‧‧‧基座之槽部7‧‧‧燈8‧‧‧支軸10‧‧‧採集器11‧‧‧管W‧‧‧矽半導體基板
圖1係單片式磊晶生長裝置之概略構成圖。 圖2係表示磊晶晶圓之製造順序之流程圖。 圖3係表示實施例、比較例之評價順序之流程圖。 圖4係表示基板洗淨後之暴露氛圍中之NO2
濃度、與磊晶晶圓背面之DWN-霧度峰值之關係的圖。 圖5係表示基板洗淨後之暴露氛圍中之NO3
濃度、與磊晶晶圓背面之DWN-霧度峰值之關係的圖。
1‧‧‧單片式磊晶生長裝置
2‧‧‧基板保管部
3‧‧‧搬送路
4‧‧‧搬送機器人
5‧‧‧反應爐
6‧‧‧基座
61‧‧‧基座之槽部
7‧‧‧燈
8‧‧‧支軸
10‧‧‧採集器
11‧‧‧管
W‧‧‧矽半導體基板
Claims (2)
- 一種磊晶晶圓之製造方法,其將經背面研磨之矽半導體基板洗淨後保管於NO2 與NO3 之濃度之合計為140 ng/m3 以下之環境氛圍中,於該矽半導體基板上使矽磊晶層氣相生長。
- 如請求項1所述之磊晶晶圓之製造方法,其中,上述合計為10 ng/m3 以下。
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