TWI756228B - 燒結體、其製造方法及靜電夾頭 - Google Patents

燒結體、其製造方法及靜電夾頭 Download PDF

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TWI756228B
TWI756228B TW106119273A TW106119273A TWI756228B TW I756228 B TWI756228 B TW I756228B TW 106119273 A TW106119273 A TW 106119273A TW 106119273 A TW106119273 A TW 106119273A TW I756228 B TWI756228 B TW I756228B
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Taiwan
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porous body
oxide
ceramic substrate
particles
sintered
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TW106119273A
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English (en)
Chinese (zh)
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TW201819337A (zh
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堀內道夫
宮澤昌邦
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日商新光電氣工業股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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    • C04B38/00Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
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    • C04B38/00Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/06Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances
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    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
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    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • HELECTRICITY
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    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
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    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dispersion Chemistry (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
TW106119273A 2016-06-09 2017-06-09 燒結體、其製造方法及靜電夾頭 TWI756228B (zh)

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Application Number Priority Date Filing Date Title
JP2016-115054 2016-06-09
JP2016115054A JP6722518B2 (ja) 2016-06-09 2016-06-09 焼結体及びその製造方法と静電チャック

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TW201819337A TW201819337A (zh) 2018-06-01
TWI756228B true TWI756228B (zh) 2022-03-01

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US (1) US10998216B2 (https=)
JP (1) JP6722518B2 (https=)
KR (1) KR102315603B1 (https=)
TW (1) TWI756228B (https=)

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Publication number Priority date Publication date Assignee Title
JP2019029384A (ja) * 2017-07-25 2019-02-21 新光電気工業株式会社 セラミックス混合物、多孔質体及びその製造方法、静電チャック及びその製造方法、基板固定装置
JP6489277B1 (ja) * 2018-03-14 2019-03-27 Toto株式会社 静電チャック
JP6922874B2 (ja) * 2018-03-14 2021-08-18 Toto株式会社 静電チャック
JP7205285B2 (ja) * 2018-03-14 2023-01-17 Toto株式会社 静電チャック
JP6504532B1 (ja) * 2018-03-14 2019-04-24 Toto株式会社 静電チャック
CN110277343B (zh) 2018-03-14 2023-06-30 Toto株式会社 静电吸盘
JP7402411B2 (ja) * 2018-10-30 2023-12-21 Toto株式会社 静電チャック
JP7002014B2 (ja) * 2018-10-30 2022-01-20 Toto株式会社 静電チャック
JP7378210B2 (ja) * 2019-01-17 2023-11-13 新光電気工業株式会社 セラミック部材の製造方法
CN111668148B (zh) * 2019-03-05 2024-09-03 Toto株式会社 静电吸盘及处理装置
JP7441402B2 (ja) * 2019-03-05 2024-03-01 Toto株式会社 静電チャック、および処理装置
JP6729735B1 (ja) * 2019-03-05 2020-07-22 Toto株式会社 静電チャック
DE102019125819A1 (de) 2019-04-17 2020-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterverarbeitungsvorrichtung und verfahren unter einsatz einer elektrostatischen entladungs-(esd)- verhinderungsschicht
US10950485B2 (en) 2019-04-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer
JP7291046B2 (ja) * 2019-09-18 2023-06-14 新光電気工業株式会社 基板固定装置
JP7296869B2 (ja) * 2019-12-10 2023-06-23 新光電気工業株式会社 静電チャック、基板固定装置
JP7600025B2 (ja) 2021-04-23 2024-12-16 新光電気工業株式会社 静電吸着部材及び基板固定装置
JP7704335B2 (ja) 2021-08-02 2025-07-08 新光電気工業株式会社 静電チャック、基板固定装置
CN118077045A (zh) * 2021-10-20 2024-05-24 日本特殊陶业株式会社 保持装置
JP7577898B2 (ja) * 2022-07-07 2024-11-05 日本特殊陶業株式会社 保持装置
CN116017887A (zh) * 2023-01-16 2023-04-25 深南电路股份有限公司 一种陶瓷基双面印制电路板及其制作方法
TW202501710A (zh) * 2023-06-29 2025-01-01 日商Toto股份有限公司 靜電吸盤

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JP2008016609A (ja) * 2006-07-05 2008-01-24 Sumitomo Electric Ind Ltd 有機金属気相成長装置

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TW201819337A (zh) 2018-06-01
KR102315603B1 (ko) 2021-10-21
KR20170139457A (ko) 2017-12-19
US20170358476A1 (en) 2017-12-14
US10998216B2 (en) 2021-05-04
JP6722518B2 (ja) 2020-07-15
JP2017218352A (ja) 2017-12-14

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