KR102315603B1 - 소결체, 그 제조 방법, 및 정전 척 - Google Patents

소결체, 그 제조 방법, 및 정전 척 Download PDF

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KR102315603B1
KR102315603B1 KR1020170071316A KR20170071316A KR102315603B1 KR 102315603 B1 KR102315603 B1 KR 102315603B1 KR 1020170071316 A KR1020170071316 A KR 1020170071316A KR 20170071316 A KR20170071316 A KR 20170071316A KR 102315603 B1 KR102315603 B1 KR 102315603B1
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oxide
porous body
hole
ceramic substrate
sintered
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KR20170139457A (ko
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미치오 호리우치
마사쿠니 미야자와
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신꼬오덴기 고교 가부시키가이샤
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    • H01L21/4807—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
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    • C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/06—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5031—Alumina
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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    • C04B41/85—Coating or impregnation with inorganic materials
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H01L21/0203—
    • H01L21/02109—
    • H01L21/6833—
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dispersion Chemistry (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
KR1020170071316A 2016-06-09 2017-06-08 소결체, 그 제조 방법, 및 정전 척 Active KR102315603B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-115054 2016-06-09
JP2016115054A JP6722518B2 (ja) 2016-06-09 2016-06-09 焼結体及びその製造方法と静電チャック

Publications (2)

Publication Number Publication Date
KR20170139457A KR20170139457A (ko) 2017-12-19
KR102315603B1 true KR102315603B1 (ko) 2021-10-21

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Country Link
US (1) US10998216B2 (https=)
JP (1) JP6722518B2 (https=)
KR (1) KR102315603B1 (https=)
TW (1) TWI756228B (https=)

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JP2019029384A (ja) * 2017-07-25 2019-02-21 新光電気工業株式会社 セラミックス混合物、多孔質体及びその製造方法、静電チャック及びその製造方法、基板固定装置
JP6489277B1 (ja) * 2018-03-14 2019-03-27 Toto株式会社 静電チャック
JP6922874B2 (ja) * 2018-03-14 2021-08-18 Toto株式会社 静電チャック
JP7205285B2 (ja) * 2018-03-14 2023-01-17 Toto株式会社 静電チャック
JP6504532B1 (ja) * 2018-03-14 2019-04-24 Toto株式会社 静電チャック
CN110277343B (zh) 2018-03-14 2023-06-30 Toto株式会社 静电吸盘
JP7402411B2 (ja) * 2018-10-30 2023-12-21 Toto株式会社 静電チャック
JP7002014B2 (ja) * 2018-10-30 2022-01-20 Toto株式会社 静電チャック
JP7378210B2 (ja) * 2019-01-17 2023-11-13 新光電気工業株式会社 セラミック部材の製造方法
CN111668148B (zh) * 2019-03-05 2024-09-03 Toto株式会社 静电吸盘及处理装置
JP7441402B2 (ja) * 2019-03-05 2024-03-01 Toto株式会社 静電チャック、および処理装置
JP6729735B1 (ja) * 2019-03-05 2020-07-22 Toto株式会社 静電チャック
DE102019125819A1 (de) 2019-04-17 2020-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterverarbeitungsvorrichtung und verfahren unter einsatz einer elektrostatischen entladungs-(esd)- verhinderungsschicht
US10950485B2 (en) 2019-04-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer
JP7291046B2 (ja) * 2019-09-18 2023-06-14 新光電気工業株式会社 基板固定装置
JP7296869B2 (ja) * 2019-12-10 2023-06-23 新光電気工業株式会社 静電チャック、基板固定装置
JP7600025B2 (ja) 2021-04-23 2024-12-16 新光電気工業株式会社 静電吸着部材及び基板固定装置
JP7704335B2 (ja) 2021-08-02 2025-07-08 新光電気工業株式会社 静電チャック、基板固定装置
CN118077045A (zh) * 2021-10-20 2024-05-24 日本特殊陶业株式会社 保持装置
JP7577898B2 (ja) * 2022-07-07 2024-11-05 日本特殊陶業株式会社 保持装置
CN116017887A (zh) * 2023-01-16 2023-04-25 深南电路股份有限公司 一种陶瓷基双面印制电路板及其制作方法
TW202501710A (zh) * 2023-06-29 2025-01-01 日商Ｔｏｔｏ股份有限公司 靜電吸盤

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