TWI751126B - 半導體處理用組成物及處理方法 - Google Patents

半導體處理用組成物及處理方法 Download PDF

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Publication number
TWI751126B
TWI751126B TW105140526A TW105140526A TWI751126B TW I751126 B TWI751126 B TW I751126B TW 105140526 A TW105140526 A TW 105140526A TW 105140526 A TW105140526 A TW 105140526A TW I751126 B TWI751126 B TW I751126B
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TW
Taiwan
Prior art keywords
composition
semiconductor processing
particles
acid
wiring
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TW105140526A
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English (en)
Chinese (zh)
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TW201807186A (zh
Inventor
亀井康孝
羽山孝弘
西口直希
加茂理
篠田智隆
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日商Ｊｓｒ股份有限公司
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Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Priority to US15/584,168 priority Critical patent/US10319605B2/en
Publication of TW201807186A publication Critical patent/TW201807186A/zh
Application granted granted Critical
Publication of TWI751126B publication Critical patent/TWI751126B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C11D17/0013—Liquid compositions with insoluble particles in suspension
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Detergent Compositions (AREA)
TW105140526A 2016-05-10 2016-12-08 半導體處理用組成物及處理方法 TWI751126B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/584,168 US10319605B2 (en) 2016-05-10 2017-05-02 Semiconductor treatment composition and treatment method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-094397 2016-05-10
JP2016094397A JP6112330B1 (ja) 2016-05-10 2016-05-10 半導体洗浄用組成物および洗浄方法

Publications (2)

Publication Number Publication Date
TW201807186A TW201807186A (zh) 2018-03-01
TWI751126B true TWI751126B (zh) 2022-01-01

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ID=58666779

Family Applications (1)

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TW105140526A TWI751126B (zh) 2016-05-10 2016-12-08 半導體處理用組成物及處理方法

Country Status (4)

Country Link
JP (1) JP6112330B1 (ko)
KR (1) KR102626654B1 (ko)
CN (1) CN107353832A (ko)
TW (1) TWI751126B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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CN107189695A (zh) * 2017-04-15 2017-09-22 浙江晶圣美纳米科技有限公司 一种可有效应用于不锈钢衬底化学机械抛光工艺的抛光液
KR20190106679A (ko) * 2018-03-07 2019-09-18 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
WO2019190738A1 (en) * 2018-03-28 2019-10-03 Fujifilm Electronic Materials U.S.A., Inc. Bulk ruthenium chemical mechanical polishing composition
CN114292707B (zh) * 2021-12-31 2023-09-22 浙江奥首材料科技有限公司 纳米胶体粒子、制备方法及包含其的清洗剂和清洗方法
WO2024071182A1 (ja) * 2022-09-30 2024-04-04 富士フイルム株式会社 半導体製造用処理液、被処理物の洗浄方法、半導体の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200938604A (en) * 2008-02-27 2009-09-16 Jsr Corp Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method using the same, and method for regenerating aqueous dispersion for chemical mechanical polishing
TW201546266A (zh) * 2014-05-20 2015-12-16 Jsr Corp 清洗用組成物及清洗方法

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US6663722B1 (en) * 1998-03-25 2003-12-16 Daikin Industries, Ltd. Method of cleaning fluorine-containing rubber molded article for semiconductor production apparatuses and cleaned molded article
JP3667273B2 (ja) 2001-11-02 2005-07-06 Ｎｅｃエレクトロニクス株式会社 洗浄方法および洗浄液
JP4821122B2 (ja) * 2004-02-10 2011-11-24 Ｊｓｒ株式会社 洗浄用組成物、半導体基板の洗浄方法および半導体装置の製造方法
CN1654617A (zh) * 2004-02-10 2005-08-17 捷时雅株式会社 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法
US7498295B2 (en) 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
JP3917601B2 (ja) * 2004-04-14 2007-05-23 株式会社東芝 薬液の認定方法および半導体装置の製造方法
DE602005000732T2 (de) * 2004-06-25 2007-12-06 Jsr Corp. Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts
CN100529008C (zh) * 2004-08-09 2009-08-19 花王株式会社 研磨液组合物
KR20100119783A (ko) * 2008-02-07 2010-11-10 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 반도체 웨이퍼의 세정방법 및 세정장치
JP2010258014A (ja) 2009-04-21 2010-11-11 Jsr Corp 洗浄用組成物および洗浄方法
US20130183889A1 (en) 2010-09-24 2013-07-18 Kao Corporation Process for producing polishing liquid composition
JP5844135B2 (ja) * 2010-12-24 2016-01-13 花王株式会社 研磨液組成物の製造方法
CN102181867A (zh) * 2011-04-11 2011-09-14 江阴市润玛电子材料有限公司 一种新型酸性钼铝蚀刻液和制备工艺
JP2013157516A (ja) 2012-01-31 2013-08-15 Advanced Technology Materials Inc 銅配線半導体用洗浄剤
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物

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TW200938604A (en) * 2008-02-27 2009-09-16 Jsr Corp Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method using the same, and method for regenerating aqueous dispersion for chemical mechanical polishing
TW201546266A (zh) * 2014-05-20 2015-12-16 Jsr Corp 清洗用組成物及清洗方法

Also Published As

Publication number Publication date
KR20170126783A (ko) 2017-11-20
CN107353832A (zh) 2017-11-17
JP2017204519A (ja) 2017-11-16
KR102626654B1 (ko) 2024-01-17
JP6112330B1 (ja) 2017-04-12
TW201807186A (zh) 2018-03-01

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