JP6112330B1 - 半導体洗浄用組成物および洗浄方法 - Google Patents

半導体洗浄用組成物および洗浄方法 Download PDF

Info

Publication number
JP6112330B1
JP6112330B1 JP2016094397A JP2016094397A JP6112330B1 JP 6112330 B1 JP6112330 B1 JP 6112330B1 JP 2016094397 A JP2016094397 A JP 2016094397A JP 2016094397 A JP2016094397 A JP 2016094397A JP 6112330 B1 JP6112330 B1 JP 6112330B1
Authority
JP
Japan
Prior art keywords
cleaning
particles
semiconductor
composition
cleaning composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016094397A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017204519A (ja
Inventor
康孝 亀井
康孝 亀井
智隆 篠田
智隆 篠田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP2016094397A priority Critical patent/JP6112330B1/ja
Priority to TW105140526A priority patent/TWI751126B/zh
Priority to KR1020170017333A priority patent/KR102626654B1/ko
Application granted granted Critical
Priority to CN201710238028.2A priority patent/CN107353832A/zh
Publication of JP6112330B1 publication Critical patent/JP6112330B1/ja
Priority to US15/584,168 priority patent/US10319605B2/en
Publication of JP2017204519A publication Critical patent/JP2017204519A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
    • C11D17/0013—Liquid compositions with insoluble particles in suspension
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2016094397A 2016-05-10 2016-05-10 半導体洗浄用組成物および洗浄方法 Active JP6112330B1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016094397A JP6112330B1 (ja) 2016-05-10 2016-05-10 半導体洗浄用組成物および洗浄方法
TW105140526A TWI751126B (zh) 2016-05-10 2016-12-08 半導體處理用組成物及處理方法
KR1020170017333A KR102626654B1 (ko) 2016-05-10 2017-02-08 반도체 세정용 조성물 및 세정 방법
CN201710238028.2A CN107353832A (zh) 2016-05-10 2017-04-12 半导体处理用组合物及处理方法
US15/584,168 US10319605B2 (en) 2016-05-10 2017-05-02 Semiconductor treatment composition and treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016094397A JP6112330B1 (ja) 2016-05-10 2016-05-10 半導体洗浄用組成物および洗浄方法

Publications (2)

Publication Number Publication Date
JP6112330B1 true JP6112330B1 (ja) 2017-04-12
JP2017204519A JP2017204519A (ja) 2017-11-16

Family

ID=58666779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016094397A Active JP6112330B1 (ja) 2016-05-10 2016-05-10 半導体洗浄用組成物および洗浄方法

Country Status (4)

Country Link
JP (1) JP6112330B1 (ko)
KR (1) KR102626654B1 (ko)
CN (1) CN107353832A (ko)
TW (1) TWI751126B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107189695A (zh) * 2017-04-15 2017-09-22 浙江晶圣美纳米科技有限公司 一种可有效应用于不锈钢衬底化学机械抛光工艺的抛光液
WO2023123760A1 (zh) * 2021-12-31 2023-07-06 浙江奥首材料科技有限公司 纳米胶体粒子、制备方法及包含其的清洗剂和清洗方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190106679A (ko) * 2018-03-07 2019-09-18 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
US11279850B2 (en) * 2018-03-28 2022-03-22 Fujifilm Electronic Materials U.S.A., Inc. Bulk ruthenium chemical mechanical polishing composition
WO2024071182A1 (ja) * 2022-09-30 2024-04-04 富士フイルム株式会社 半導体製造用処理液、被処理物の洗浄方法、半導体の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142441A (ja) * 2001-11-02 2003-05-16 Nec Electronics Corp 洗浄方法および洗浄液
JP2005255983A (ja) * 2004-02-10 2005-09-22 Jsr Corp 洗浄用組成物、半導体基板の洗浄方法および半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1657002A3 (en) * 1998-03-25 2014-05-21 Daikin Industries, Ltd. Method of cleaning fluorine-containing rubber molded article for semiconductor production apparatuses and cleaned molded article
CN1654617A (zh) * 2004-02-10 2005-08-17 捷时雅株式会社 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法
US7498295B2 (en) 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
JP3917601B2 (ja) * 2004-04-14 2007-05-23 株式会社東芝 薬液の認定方法および半導体装置の製造方法
DE602005000732T2 (de) * 2004-06-25 2007-12-06 Jsr Corp. Reinigungszusammensetzung für Halbleiterkomponente und Verfahren zur Herstellung eines Halbleitergeräts
CN100529008C (zh) * 2004-08-09 2009-08-19 花王株式会社 研磨液组合物
CN101939826B (zh) * 2008-02-07 2012-08-22 独立行政法人产业技术综合研究所 半导体晶片的清洗方法以及清洗装置
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
JP2010258014A (ja) 2009-04-21 2010-11-11 Jsr Corp 洗浄用組成物および洗浄方法
CN103119122B (zh) * 2010-09-24 2014-10-08 花王株式会社 研磨液组合物的制造方法
JP5844135B2 (ja) * 2010-12-24 2016-01-13 花王株式会社 研磨液組成物の製造方法
CN102181867A (zh) * 2011-04-11 2011-09-14 江阴市润玛电子材料有限公司 一种新型酸性钼铝蚀刻液和制备工艺
JP2013157516A (ja) 2012-01-31 2013-08-15 Advanced Technology Materials Inc 銅配線半導体用洗浄剤
TWI636131B (zh) * 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
JP6350080B2 (ja) * 2014-07-31 2018-07-04 Jsr株式会社 半導体基板洗浄用組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142441A (ja) * 2001-11-02 2003-05-16 Nec Electronics Corp 洗浄方法および洗浄液
JP2005255983A (ja) * 2004-02-10 2005-09-22 Jsr Corp 洗浄用組成物、半導体基板の洗浄方法および半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107189695A (zh) * 2017-04-15 2017-09-22 浙江晶圣美纳米科技有限公司 一种可有效应用于不锈钢衬底化学机械抛光工艺的抛光液
WO2023123760A1 (zh) * 2021-12-31 2023-07-06 浙江奥首材料科技有限公司 纳米胶体粒子、制备方法及包含其的清洗剂和清洗方法

Also Published As

Publication number Publication date
TW201807186A (zh) 2018-03-01
KR102626654B1 (ko) 2024-01-17
TWI751126B (zh) 2022-01-01
JP2017204519A (ja) 2017-11-16
CN107353832A (zh) 2017-11-17
KR20170126783A (ko) 2017-11-20

Similar Documents

Publication Publication Date Title
JP6112329B1 (ja) 半導体洗浄用組成物および洗浄方法
JP6112330B1 (ja) 半導体洗浄用組成物および洗浄方法
KR102314305B1 (ko) 세정용 조성물 및 세정 방법
JP6508501B1 (ja) 半導体処理用組成物および処理方法
TWI751969B (zh) 化學機械研磨用處理組成物、化學機械研磨方法及洗淨方法
US20170330762A1 (en) Semiconductor treatment composition and treatment method
US10319605B2 (en) Semiconductor treatment composition and treatment method
JP2018092960A (ja) 洗浄用組成物および洗浄方法
TWI711697B (zh) 半導體處理用組合物及處理方法
JP6283057B2 (ja) 半導体洗浄用組成物の保管方法および洗浄方法
JP7375450B2 (ja) 半導体処理用組成物及び処理方法
JP2022175239A (ja) 半導体洗浄用組成物および洗浄方法
JP2023037772A (ja) 半導体洗浄用組成物および半導体基板の洗浄方法
TWI855138B (zh) 半導體處理用組成物及處理方法
JP2023111281A (ja) 半導体洗浄用組成物および洗浄方法

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20161109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170106

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20170117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170215

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170228

R150 Certificate of patent or registration of utility model

Ref document number: 6112330

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250