TWI750603B - 基板處理裝置以及基板處理方法 - Google Patents

基板處理裝置以及基板處理方法 Download PDF

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Publication number
TWI750603B
TWI750603B TW109107344A TW109107344A TWI750603B TW I750603 B TWI750603 B TW I750603B TW 109107344 A TW109107344 A TW 109107344A TW 109107344 A TW109107344 A TW 109107344A TW I750603 B TWI750603 B TW I750603B
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TW
Taiwan
Prior art keywords
piping
substrate
substrate processing
liquid
processing
Prior art date
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TW109107344A
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English (en)
Chinese (zh)
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TW202044512A (zh
Inventor
山口直子
樋口鮎美
藤田恵理
岩畑翔太
Original Assignee
日商斯庫林集團股份有限公司
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Publication of TW202044512A publication Critical patent/TW202044512A/zh
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Publication of TWI750603B publication Critical patent/TWI750603B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW109107344A 2019-03-22 2020-03-06 基板處理裝置以及基板處理方法 TWI750603B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019055429A JP7278822B2 (ja) 2019-03-22 2019-03-22 基板処理装置、および、基板処理方法
JP2019-055429 2019-03-22

Publications (2)

Publication Number Publication Date
TW202044512A TW202044512A (zh) 2020-12-01
TWI750603B true TWI750603B (zh) 2021-12-21

Family

ID=72559786

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109107344A TWI750603B (zh) 2019-03-22 2020-03-06 基板處理裝置以及基板處理方法

Country Status (4)

Country Link
JP (1) JP7278822B2 (ja)
CN (1) CN113544821A (ja)
TW (1) TWI750603B (ja)
WO (1) WO2020195533A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW455927B (en) * 1997-02-07 2001-09-21 Tokyo Electron Ltd Degassing apparatus and treatment apparatus with gas permeable films
JP2006112507A (ja) * 2004-10-14 2006-04-27 Tohoku Univ フッ素樹脂２層チューブ及びその製造方法
TW200846081A (en) * 2006-09-29 2008-12-01 Univ Tohoku Nat Univ Corp Film coating apparatus and film coating method
TW201729256A (zh) * 2015-11-17 2017-08-16 尤金科技有限公司 基板處理裝置以及使用該裝置的基板處理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3844999B2 (ja) * 1997-03-21 2006-11-15 株式会社日立国際電気 基板処理方法
JP3675385B2 (ja) * 2001-10-15 2005-07-27 関西日本電気株式会社 半導体製造装置および半導体製造方法
US20040003828A1 (en) * 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
JP5887201B2 (ja) * 2012-05-14 2016-03-16 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体
JP6517564B2 (ja) * 2015-03-30 2019-05-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW455927B (en) * 1997-02-07 2001-09-21 Tokyo Electron Ltd Degassing apparatus and treatment apparatus with gas permeable films
JP2006112507A (ja) * 2004-10-14 2006-04-27 Tohoku Univ フッ素樹脂２層チューブ及びその製造方法
TW200846081A (en) * 2006-09-29 2008-12-01 Univ Tohoku Nat Univ Corp Film coating apparatus and film coating method
TW201729256A (zh) * 2015-11-17 2017-08-16 尤金科技有限公司 基板處理裝置以及使用該裝置的基板處理方法

Also Published As

Publication number Publication date
TW202044512A (zh) 2020-12-01
JP2020155735A (ja) 2020-09-24
WO2020195533A1 (ja) 2020-10-01
CN113544821A (zh) 2021-10-22
JP7278822B2 (ja) 2023-05-22

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