TWI750526B - 施用黏結層之方法 - Google Patents

施用黏結層之方法 Download PDF

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TWI750526B
TWI750526B TW108139816A TW108139816A TWI750526B TW I750526 B TWI750526 B TW I750526B TW 108139816 A TW108139816 A TW 108139816A TW 108139816 A TW108139816 A TW 108139816A TW I750526 B TWI750526 B TW I750526B
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aluminum
group
bonding
base material
layer
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TW108139816A
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TW202000820A (zh
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馬克斯 威普林格
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奧地利商Ev集團E塔那有限公司
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
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Abstract

本發明係關於一種用於將由基本層及保護層組成之黏結層施用於基板上之方法，其具有以下方法步驟： 將可氧化基本材料作為基本層施用於該基板之黏結側上， 用可至少部分地溶解於該基本材料中之保護材料作為保護層來至少部分地覆蓋該基本層。 另外，本發明係關於一種對應基板。

Description

施用黏結層之方法
本發明係關於如技術方案1之方法以及如技術方案9之基板。
在當前技術水平中，存在將各種材料連接至彼此之無數種方法。在半導體工業中，近年來，主要是將兩個基板暫時地或永久地連接至彼此之黏結技術得到了認可。很多時候，黏結過程在基板上之(若干)半導體及/或金屬結構之間發生。近來最為熟知之金屬黏結技術係銅黏結。基板係用於功能性總成(諸如，微晶片、記憶體晶片或MEMS總成)之載體。近年來，越來越多地嘗試在配置於各個基板上之總成之間產生連接，以免該等總成之間之勞動密集、昂貴且易出現缺陷之導線黏結過程。另外，直接黏結變化形式具有高總成密度之巨大優點。總成不再必須定位於彼此旁邊並經由導線連接，而是彼此上下地堆疊並藉由各種技術垂直地連接至彼此。在大多數情形中，藉由接觸點產生垂直連接。不同基板之接觸點必須彼此相同且在實際黏結過程之前定向至彼此。
另一極少使用之方法係鋁黏結。在此方法中，一基板之表面上之鍍鋁點將與處於第二基板上之材料黏結。在此情形中，此可係鋁或適合的不同材料。鋁之一個缺陷係其極端氧親和性。即使對於銅，其氧親和性亦係高的，使得必須在黏結過程之前定期移除氧化銅。對於鋁，其氧親和性高一倍數。鋁仍形成難以移除之相對厚的鈍化氧化鋁層。與銅相比，鋁因而極少用於黏結連接，此乃因在此時，由於極穩定氧化層而無法以合理成本達成可靠黏結結果。然而，鋁廣泛用於半導體區中來產生晶片表面上橫向方向之金屬連接。此處，鋁就其具有在矽中比(舉例而言)銅或金主要較慢之擴散行為而言係卓越的。擴散至矽中之金屬將削弱電晶體之特性或使電晶體完全喪失功能。基於此有利擴散行為，再搭配低成本及相對優良導電性，多年來鋁已成為主要用於在半導體晶片上產生橫向電連接之材料。近來，在新一代晶片中，銅由於其更佳導電性而日益取代鋁；然而，鋁主要地在用稍老生產技術於200 mm基板上生產晶片之情形中仍具有高度重要性。具體地，此等生產周邊區/工廠近來已發現用於生產MEMS (微機電系統)組件之增強用途。此等MEMS組件之生產又頻繁地需要黏結過程，使得對可靠鋁黏結過程之需求增加。除了半導體工業之外，鋁由於其質輕、便宜且主要地可硬化而亦係有需求市場之結構材料。在半導體工業中，基於上文述及之原因，一段時間來已嘗試開發使鋁可用作結構材料且特定而言用於黏結連接之材料的方法。
在使用氧親和性材料(諸如，銅及鋁)時的最大問題係避免在黏結表面上氧化以及在黏結過程之前自黏結表面完全移除氧化物。此外，極端氧親和性材料(諸如，鋁)產生強力且難以還原之氧化物。用於氧化物移除之設備係昂貴的、勞動密集的且在某些情況下係危險的(有毒物質)。
因而，本發明之目標係指示易氧化材料(諸如，特定而言鋁)藉助其可用於黏結之一種方法以及一種具備黏結層之基板。
此目的係藉助技術方案1及技術方案9之特徵而達成。在附屬技術方案中指示本發明之有利的進一步發展。在說明書、申請專利範圍及/或圖中指示之特徵中之至少兩者之所有組合亦落在本發明之範疇內。在經指示之值範圍中，處於上文述及之限制內的值亦揭示為邊界值且可以任何組合予以主張。
本發明之基本理念係提供由基板上特定而言作為擴散對之基本層與保護層組成之黏結層，藉此該基本層之基本材料可氧化，而該保護層之保護材料可至少較不容易氧化。
因而，本發明特定而言係關於一種在一開始便防止氧親和性材料(諸如，特定而言鋁(較佳的)或銅)氧化之方法。根據本發明，特定而言藉由沈積至少部分地(特定而言，主要地)且較佳地完全地覆蓋基本材料之保護材料來達成對氧親和性基本材料之保護。
元素相對於其氧親和性之目標分解可最簡單地由電化學電壓序列定義。氧親和性元素(諸如，鋰)係極端鹼性材料，容易氧化，且因而充當還原劑，容易釋放電子，且因而具有極端負性標準電極電位。然而，具有低氧親和性之元素被稱為貴重元素，此乃因其可容易地還原且因而充當氧化劑，接納電子，且具有極其正性標準電極電位。特定而言，使用具有小於2.00 V、較佳地小於1.00 V、更佳地小於0.0 V、最佳地小於-1.0 V、尤佳地小於-2.0 V且甚至更佳地小於-3.0 V之標準電極電位之材料作為基本材料。銅具有大約0.16 V之標準電極電位，鋁具有大約-1.66 V之標準電極電位。最貴重金屬係具有大約1.69 V (針對第一氧化階段)之標準電極電位的金。
在尤其較佳變化形式中，基本材料及保護材料作為靶材彼此分離地定位於塗佈室中且在真空下連續施用，使得不產生基本材料與含氧氣氛之接觸。
本發明之一實施例在於：在黏結過程期間將保護材料施於基本材料上；以及由於其化學物理性質，在黏結過程期間將保護材料至少部分地(特定而言，主要地)且較佳地完全地溶解於基本材料中。以一方式執行對基本材料-保護材料組合之選擇使得保護材料允許固態溶解過程。與基本材料溶解於保護材料中相比，保護材料較佳地更容易溶解於基本材料中。
特定而言，保護材料在特定過程條件下溶解於基本材料中。因而，基本材料對保護材料具有邊界溶解度及/或基本材料可與基本材料至少部分地(特定而言，主要地)且較佳地完全地混合。在保護材料在基本材料中之現有邊界溶解度之情形中，在室溫下之邊界溶解度特定而言係足夠大的以保持特定量之保護材料被溶解。以此方式，根據本發明之保護材料可施用作極薄層，以便避免在保護材料至基本材料中之擴散過程期間之可導致(非所要)沈澱物之局部濃度峰值。
根據本發明係有利的之本發明之另一態樣在於：特定而言藉由用保護層至少主要地覆蓋基本層之未由基板覆蓋之表面來防止氧親和性基本材料與含氧或富氧氣氛接觸。
保護材料本身特定而言至少在室溫下較佳地係固態的。因而，保護材料係非液態的且允許輸送受保護基本材料穿過含氧氣氛。
在本發明之有利實施例中，以一方式選擇保護材料，使得保護材料具有比基本材料小之氧親和性，或可以比移除形成於基本材料上之氧化物之情形簡單之手段移除形成於保護材料上之任何氧化物。除簡單移除氧化物之外，亦以一方式有利地選擇用於保護層之氧化物形成材料，使得在氧化物移除之後僅又緩慢形成新氧化物。特定而言，在至少2分鐘、較佳地至少5分鐘、更佳地至少10分鐘且最佳地至少15分鐘之時間間隔中形成小於0.3 nm之氧化物，較佳地小於0.1 nm之氧化物。
根據本發明，特定而言至少主要地防止形成於保護層上之任何氧化物併入於基本材料中。為此目的，特定而言緊接在黏結過程之前移除保護材料之氧化物。在較小量之經形成氧化物之情形中，亦可設想在稍後所要黏結過程期間破壞氧化物且直接併入至邊界層中。較佳地使用具有下文提及之性質中之一或多者之保護材料： • 低氧親和性，其特定而言由大於0 V、較佳地大於1.00 V、更佳地大於2.00 V之標準電極電位界定，且其較佳地小於基本材料之氧親和性， • 在基本材料中之高溶解度，其特定而言大於10-5 mol%、較佳地大於10-3 mol%、更佳地大於1 mol%、最佳地大於10 mol%且尤佳地大於40 mol%， • 基本材料之性質不受消極影響，且因而在所要高電導率不削弱該導電率之情形中及在所要高位準之強度不減小該強度之情形中， • 相對於氣氛之氣密性， • 經濟性， • 高位準之可得性， • 輕微毒性，特定而言無毒，及/或 • 良好黏結性質。
因此，本發明特定而言係關於一種用於用第二材料(亦即，保護材料)覆蓋(特定而言，塗佈)趨向於氧化之第一材料(亦即，基本材料，特定而言金屬或半導體)之方法。保護材料特定而言在另一方法步驟中藉由基本材料之溶解過程而至少部分地(特定而言，主要地)且較佳地完全地溶解及/或在相當特定之擴展實施例中部分地(特定而言，主要地)且較佳地完全地形成沈澱物。根據本發明係較佳的之實施例包括保護材料至基本材料中之完全溶解，藉此在此情形中，無沈澱物產生。由保護材料形成之保護層之目標特定而言在於防止基本材料氧化。保護材料本身可在與含氧氣氛接觸後旋即氧化，且在根據本發明之溶解過程在基本材料中開始之前視情況移除氧化物。在相當特定實施例中，在出於設計原因防止保護層在去往黏結器之路程中重新氧化之單元中執行移除保護層上之此氧化物。舉例而言，將可設想在對應真空叢集中使用氧化物移除模組及黏結室，該對應真空叢集使該模組與周邊含氧氣氛分離。此等叢集系統為熟習此項技術者所熟知。
根據本發明之方法之較佳目標主要在於：保護將在額外方法步驟中黏結之氧親和性基本材料(特定而言，鋁以及銅)直至氧化之前的實際黏結步驟。移除較佳地具有比將受保護之基本材料低得多之氧親和性之保護材料之任何氧化物係顯著地更簡單、更快速且主要地更可靠的，使得可促進該方法。
根據較佳實施例，然後保護材料特定而言在移除該保護材料之氧化物之後與特定而言根據本發明形成之另一基板黏結。較佳地，保護材料在於基本材料中之黏結過程期間至少部分地(特定而言，主要地)且較佳地完全地溶解，使得在理想情形中，在基本材料與富氧氣氛之間無接觸發生，直至發生黏結。
因而，根據本發明之方法主要適於在塗佈於基板上之後立即用保護材料暫時保護氧親和性基本材料(特定而言，鋁或銅)。
就基本材料並非全表面地而是特定而言以結構化方式及/或僅在部分區(舉例而言，銅觸點或鋁邊界，其係MEMS組件之氣密密封空間之部分)中施用於基板上而言，保護材料以其厚度儘可能均勻之膜形式施用，且特定而言經密封。根據本發明，主要地基本材料之(特定而言，中間的)層厚度對保護材料之層厚度之比率係重要的。另外，根據本發明之基本材料與保護材料之化學的、物理的及/或冶金的行為發揮作用。
基本材料較佳地係固體溶劑。特定而言，基本材料可係多相多組分系統。在多相材料之情形中，在針對所有相之理想情形中，對於溶解過程之所有考量至少對於相係有效的。作為基本材料，較佳地選擇個別化學元素，特定而言金屬、半金屬或非金屬，特定而言矽、鎵、鋁、鎳、鈦或銅。此等金屬係在半導體工業最經常地用於生產導電化合物、觸點或結構性建造塊(舉例而言，MEMS總成)之材料。
為儘可能簡單地揭示根據本發明之方法，藉由舉例方式而非限制方式關於基本材料鋁來闡述根據本發明之方法。鋁根據本發明係尤其適合的，此乃因其係高度可得的經濟性結構材料。
保護材料特定而言亦可係多相多組分系統，但其較佳地係較佳地僅以一個相發生之簡單化學元素。在此情形中，其較佳地係金屬、半金屬、鹼金屬或鹼土金屬。亦可根據本發明設想使用非金屬元素(諸如，碳)，只要化學物理性質依據根據本發明之方法在非金屬與基本材料之間對應即可。
根據本發明，原則上考量以下材料作為基本材料及/或保護材料。在此情形中，根據本發明之方法需要保護材料可至少部分地(特定而言，主要地)且較佳地完全地溶解於基本材料中。 • 金屬，特定而言 º Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn、Zn、Ga • 鹼金屬，特定而言 º Li、Na、K、Rb、Cs • 鹼土金屬，特定而言 º Mg、Ca、Sr、Ba • 合金 • 半導體，特定而言具備對應摻雜 º 元素半導體，特定而言 ■ Si、Ge、Se、Te、B、Sn º 化合物半導體，特定而言 ■ GaAs、GaN、InP、InxGa1-x N、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2 、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x) Cd(x) Te、BeSe、HgS、Alx Ga1-x As、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2 、CuInS2 、CuInGaS2 、SiC、SiGe。
對於移除保護材料之氧化層，較佳地以下方法係適合的： • 化學氧化物移除，特定而言藉由 º 氣體還原劑及/或 º 液體還原劑 • 物理氧化物移除，特定而言藉助電漿 • 離子輔助化學蝕刻，特定而言 º 快速離子轟擊(FAB，濺鍍) º 研磨，及/或 º 拋光。
對於基本材料及/或保護層之沈積及因而合成，以下方法係適合的： • 物理汽相沈積(英文：Physical Vapor Deposition，PVD) • 化學汽相沈積(英文：化學汽相沈積，CVD) • 流電方法 • 溶膠-凝膠方法
根據本發明之基本層及保護層之系統被設計為層系統且特定而言表示不處於熱動平衡中之系統。因此，在相對於室溫係高溫之溫度下，相互擴散(較佳地至少主要地且特定而言排他地)導致基本材料與保護材料之間保護材料至基本材料中之擴散。
根據本發明之系統特定而言被設計為擴散對。所闡述之相圖以及上文述及之材料組合之任何相圖表示各個溫度及濃度下之數個相之平衡狀態。可自關於動力學過程(諸如，擴散)之平衡圖(諸如，相圖)得出之結論係極有限的。原則上，平衡圖不允許對動力學過程之任何評定。因而排他地使用相圖來做出關於在一般情形中保護材料是否可在特定溫度下溶解於基本材料中之評定。就在保護材料至基本材料中之擴散過程期間發生局部濃度積聚(其超過保護材料在基本材料中之可溶性且因此導致可能的分離、相形成或類似者)而言，在以下闡述中忽略此。在下文中，原則上，假定係快速執行保護材料至基本材料中之擴散，使得在給定溫度下，在任何時候任何地方皆不超過保護材料在基本材料中之最大溶解度。此特定而言係根據本發明達成，此乃因在給定溫度下保護材料在基本材料中之溶解度越大，保護材料便越快速地擴散至基本材料中及/或在保護材料-基本材料界面中保護材料至基本材料中之傳輸量越小。
所繪示及闡述之相圖係藉由冶金術確定。在每一情形中，許多組分在第二組分中具有極低溶解度，使得幾乎不可基於該繪示來辨識溶解度極限。
為能夠更佳地闡述根據本發明之理念，闡述儘可能簡單之數個系統之根據本發明之理念。使用技術上極重要且極難以黏結之最新材料(鋁)作為基本材料。因而，基本材料在沈積於基板之黏結側上之後係單組分單相系統。
關於用於保護層之保護材料，下文藉由舉例方式呈現四種重要材料(亦即，鍺、鎵、鋅及鎂)，且該等材料具有根據本發明之必需性質。因而，此保護材料在沈積之後亦係單組分單相系統。上文述及之材料組合根據本發明係較佳的，藉此上文述及之關於個別材料組合之優點參考下文闡述之實例。
黏結層之基本材料-保護材料系統因此係層系統，其較佳地在黏結過程期間藉由溶解過程轉化成二組分單相系統。在此情形中，較佳地產生由基本材料及保護材料組成之混合晶體。黏結過程本身在惰性氣體氣氛中但更佳地在真空中發生。
在本發明之有利實施例中，特定而言藉由在(成功的)黏結過程之後執行至少一個熱處理來期望得到沈澱物，以便藉由保護材料自基本材料中之至少部分的(特定而言，主要的)且較佳地完全的沈澱來產生二組分二相系統。
下文，基於更有利實施例，闡釋本發明，藉此在每一情形中之實施例可視為獨立發明態樣本身，該等態樣將揭示為單獨發明且可特定而言以與上文一般性揭示內容組合形式而予以主張。第一實施例
可應用根據本發明之理念之第一系統係鋁-鍺(簡稱為Al-Ge)系統。二元Al-Ge系統係具有鍺在鋁中之部分邊界溶解度及鋁在鍺中之消失性低邊界溶解度之完全共晶系統。因而選擇鋁作為基本材料。
為保護鋁免受氧化，在成功沈積於基板上之後立即用作為保護層之鍺層覆蓋鋁。鍺因而係根據本發明之保護材料。
鍺層特定而言小於10 μm，較佳地小於1 μm，更佳地小於100 nm，最佳地小於10 nm，且尤佳地小於1 nm。
在最低可能溫度下執行沈積，以免或至少抑制鍺在高溫下至鋁中之部分或甚至完全擴散。
在沈積鍺之情形中，鋁之溫度小於600℃，較佳地小於500℃，更佳地小於400℃，最佳地小於300℃，尤佳地小於200℃，且甚至更佳地小於100℃。在特定情形中，鋁甚至可有效冷卻以便使溫度進一步降低。藉由最低可能溫度，立即阻礙沈積於鋁上之鍺之熱移動，且將該鍺較佳地保持於表面上，且因而其不擴散至鋁中。
另外，藉由低溫下鍺在鋁中之尤其低溶解度來阻礙鍺至鋁中之擴散。自此時開始，鍺用作用於鋁之保護材料。若該系統曝露於含氧氣氛，則鍺至少主要地且較佳地完全地氧化，且因此藉助於鋁相對於該氣氛係密封的之事實來保護鋁免受氧化。
就此而論，考量鍺之標準電極電位係大約0.12 V且鋁之標準電極電位係大約-1.66 V。因而鍺比鋁貴重且因此無法作為犧牲陽極來化學上保護鋁。
因此，緊密地施用鍺層以便在鋁與氣氛之間建立實體障壁。
為實施鋁與所要第二材料之間之黏結，首先自鍺移除所形成之任何氧化鍺。藉由物理及/或化學手段執行氧化鍺之移除。可設想氧化物之濺鍍、藉由減小酸之濕式化學移除或藉由氫或其他氣體還原劑之還原。在移除氧化鍺之後，儘快地執行使純鍺表面與待黏結表面(特定而言，特定而言根據本發明類似地構造之基板)接觸。
在相對於室溫係高溫之黏結溫度下執行黏結過程。在此情形中，黏結溫度係特定而言大於25℃，較佳地大於100℃，更佳地大於200℃，最佳地大於300℃，尤佳地大於400℃，且甚至更佳地約426℃。根據相圖，鋁在大約426℃下具有對鍺之大約2.5 mol%之最大溶解度。根據本發明，在較佳實施例中，藉由較佳黏結溫度(特定而言，在400℃至420℃之間)低於共晶溫度來防止在邊界區中形成液態共晶相。在此溫度範圍中，鍺在鋁中之溶解度仍總是足夠高的以調整鍺至鋁中之溶解。根據本發明，在黏結過程期間之黏結溫度保持恆定在達到鍺至鋁中之至少主要的(較佳地完全的)溶解之此溫度處。
可藉由已知鍺至鋁中之擴散常數之一維擴散方程之溶解來計算該溶解所需之時間。然而，維持該溫度達更短或更長時間可係必需的且有用的。根據本發明將使鍺溶解於鋁中之時間長度設定為特定而言大於1分鐘，較佳地大於10分鐘，更佳地大於30分鐘，最佳地大於1小時，尤佳地大於2小時，且甚至更佳地大於5小時。
在溶解過程期間，較佳地維持或增加將彼此黏結之基板上之壓力。作用於黏結層上之壓力特定而言大於1 Pa，較佳地大於100 Pa，更佳地大於10,000 Pa，最佳地大於1 MPa，尤佳地大於10 MPa，且甚至更佳地大於100 MPa。特定而言，相對於標準晶圓所使用之力係大於10 N，較佳地大於100 N，最佳地大於1,000 N，尤佳地大於10,000 N，且甚至更佳地大於100,000 N。
在溶解過程期間，鍺較佳地溶解於全部鋁中。由於將被溶解之鍺之量係極低的而同時溶解鋁之量係極大的之事實，鍺在鋁中之總濃度係極小的。鍺在鋁中之總濃度係特定而言小於1 mol%，較佳地小於10-3 mol%，較佳地小於10-5 mol%，且更佳地小於10-7 mol%。較佳地，鍺不僅排他地溶解於表面附近之鋁區域中，而且儘可能深地擴散至鋁中，較佳地如此深以使得在特定時間之後，已達成鍺在鋁中之均勻分佈。
在根據本發明之第一程序中，本發明提供在冷卻過程期間，不會造成超過鍺在鋁中之邊界溶解度，使得鍺總是保持完全溶解於鋁中。因此，防止在整個溫度範圍中鍺在鋁基質中之沈澱。此係根據本發明藉由以下步驟而執行：根據本發明選擇鋁層厚度對鍺層厚度之比率，且擴散過程運行達特定量之時間，直至鍺特定而言主要地(較佳地完全地)分佈於鋁中且基本上跨越整個可用空間。鍺層厚度與鋁層厚度之間之比率在此情形中小於1，較佳地小於10-3 ，更佳地小於10-5 ，最佳地小於10-7 ，尤佳地小於10-9 ，且最佳地小於10-11 。
在根據本發明之替代程序中，以一方式設定鍺層厚度，使得在較高溫度下執行鍺之特定而言至少主要的(較佳地完全的)溶解，但在冷卻期間產生導致鍺沈澱物之過飽和混合晶體。此等鍺沈澱物可積極地影響鋁之強度性質。其較佳地(特定而言)以與額外熱處理組合之方式造成鋁之強度增加。第二實施例
可應用根據本發明之理念之第二系統係鋁-鎵(簡稱為Al-Ga)系統。二元鋁-鎵系統係具有極強降級之完全共晶系統。共晶體濃度極接近於純鎵之濃度。
鎵在鋁中之邊界溶解度係格外高的且達到其在約125℃溫度下大約7.5 mol%至8.0 mol%之最大值。然而，鋁在鎵中之邊界溶解度係極小的。
因而，根據本發明選擇鋁作為基本材料。為保護鋁免受氧化，在成功沈積之後立即用鎵層覆蓋鋁。形成特定而言小於10 μm，較佳地小於1 μm，更佳地小於100 nm，最佳地小於10 nm，且尤佳地小於1 nm之鎵層。
在最低可能溫度下執行沈積，以免或至少抑制鎵在高溫下至鋁中之部分或甚至完全擴散。鎵具有大約30℃之極低熔點。為防止施用於鋁上之鎵層液化，設定低於30℃之溫度。然而，根據本發明將可設想在不阻礙處置整個晶圓之情況下，鎵在較高溫度下在鋁上保持液態形式。原因可主要在於極其少量之經沈積鎵，其具有足夠高表面張力及至鋁之足夠高黏著力以繼續存在為液態金屬膜。
在第二實施例中，根據本發明提供鎵在中等溫度下擴散至鋁中。因而，在用保護層覆蓋基本層之後儘可能快地執行後續黏結過程。
在沈積鎵之情形中，鋁之溫度小於300℃，較佳地小於200℃，更佳地小於100℃，最佳地小於50℃，尤佳地小於30℃，且甚至更佳地小於0℃。在特定情形中，甚至可藉由使溫度進一步降低來使鋁有效地冷卻。若該系統曝露於含氧氣氛，則鎵較佳地氧化且因此保護鋁。
就此而論，考量鎵之標準電極電位係大約-0.53 V且鋁之標準電極電位係大約-1.66 V。因而，鍺比鋁貴重且因此無法作為犧牲陽極來化學上保護鋁。因此，緊密地施用鎵層以便在鋁與氣氛之間建立實體障壁。
鎵在鋁中之邊界溶解度在室溫下亦仍係極其高的，若即使並非處於已述及之7.5 mol%至8.0 mol%之最大值，則僅略低於該最大值。鎵在鋁中之邊界溶解度僅在低於室溫處又降低。在本發明之此實施例中，可因而避免在鋁中溶解之鎵之沈澱。
藉由特定而言亦甚至在室溫下鎵在鋁中之尤其高溶解度，材料鎵在此方面尤其適合溶解於鋁中。
根據本發明，設定過程參數，使得在任何時候鎵在鋁中之濃度小於邊界溶解度，此乃因否則，可自鋁與鎵之混合晶體及液相產生二相系統。此將具有由於在室溫下亦仍存在液相而可能不再實施黏結之效應。
相反，具體地低熔點及在極其低溫下液化之可能性係對後續黏結過程之最佳要求。藉助於最多次小量溫度增加，鎵在鋁之表面上液化且因此作為液相匹配將彼此連接之兩個表面之輪廓。雖然本發明之實際理念係根據本發明將鎵溶解於鋁中，但在此方面作為本發明之獨立態樣揭示在實際溶解過程之前在低溫下為支援黏結過程之液化的能力。
為實施鋁與所要第二材料之間之黏結，首先自鎵移除所形成之任何氧化鎵。就像鋁一樣，鎵本身塗佈有厚氧化層且因此係鈍化的。鎵與水形成氫氧化鎵層。藉由物理及/或化學手段執行氧化鎵之移除。
可設想氧化物之濺鍍、藉由減小酸及/或液劑之濕式化學移除或藉由氫或其他氣體還原劑之還原。在移除氧化鎵之後，儘快地執行使純鎵表面與待黏結表面(特定而言，特定而言根據本發明類似地構造之基板)接觸。
在相對於室溫係高溫之溫度下執行黏結過程。在此情形中，黏結溫度係特定而言大於25℃，較佳地大於100℃，更佳地大於200℃，最佳地大於300℃，尤佳地大於400℃，且甚至更佳地約426℃。根據相圖，鋁在77℃與177℃之間具有對鍺之大約8 mol%之最大溶解度。
在Al-Ga擴散對之情形中，極難以防止在邊界區中形成液態共晶相。由於根據本發明將鎵溶解於鋁中係較佳的且由於儘快地發生擴散，因此根據本發明短暫存在液相係可接受的。根據本發明，在黏結過程期間之黏結溫度保持恆定在達到鎵在鋁中之至少主要的(較佳地完全的)溶解之此溫度處。
可藉由解已知鎵在鋁中之擴散常數之一維擴散方程來計算所需時間。然而，維持該溫度達更短或更長時間可係必需的且有用的。使鎵溶解於鋁中之時間長度在此情形中係大於1分鐘，較佳地大於10分鐘，更佳地大於30分鐘，最佳地大於1小時，尤佳地大於2小時，且甚至更佳地大於5小時。
在溶解過程期間，較佳地維持或甚至增加將彼此黏結之基板上之壓力。支配性壓力係特定而言大於1 Pa，較佳地大於100 Pa，更佳地大於10,000 Pa，最佳地大於1 MPa，尤佳地大於10 MPa，且甚至更佳地大於100 MPa。特定而言相對於標準晶圓所使用之力係大於10 N，較佳地大於100 N，最佳地大於1,000 N，尤佳地大於10,000 N，且甚至更佳地大於100,000 N。
在溶解過程期間，鎵較佳地溶解於全部鋁中。由於將被溶解之鎵之量係極小的而將被溶解之鋁之量係極大的之事實，鎵在鋁中之總濃度係極小的。鎵在鋁中之總濃度係特定而言小於10 mol%，較佳地小於5 mol%，較佳地小於1 mol%，且更佳地小於10-3 mol%。較佳地，鎵不僅排他地溶解於表面附近之鋁區域中，而且儘可能深地擴散至鋁中，較佳地如此深以使得在特定時間之後，已達成鎵在鋁中之均勻分佈。
在根據本發明之程序中，現在確保在冷卻過程期間，從不超過鎵在鋁中之邊界溶解度，使得鎵總是保持完全地溶解於鋁中。因此，防止在整個溫度範圍中鎵在鋁基質中之沈澱。在Al-Ga系統中，使此發生在技術上係極簡單的，此乃因鎵在鋁中之邊界溶解度之改變在大約130℃與室溫之間之溫度範圍中係邊際性的，亦即，其不會特別多地改變。因此，在冷卻過程期間，幾乎不存在發生鎵在鋁中(主要地)沈澱之危險。鎵層厚度與鋁層厚度之間之比率在此情形中小於1，較佳地小於10-3 ，更佳地小於10-5 ，最佳地小於10-7 ，尤佳地小於10-9 ，且甚至更佳地小於10-11 。第三實施例
可應用根據本發明之理念之第三系統係鋁-鋅(簡稱為Al-Zn)系統。二元鋁-鋅系統係具有富鋅共晶體及富鋅共析體之二元系統。對於根據本發明之理念，特定而言系統搭配物之邊界溶解度係重要的。根據Al-Zn相圖，鋁具有對鋅之邊界溶解度，且鋅具有對鋁之邊界溶解度(即使其係小的)。由於鋁較佳地用作基本材料且鋅較佳地用作保護層，因此相圖之富鋁側係重要的。
為保護鋁免受氧化，在成功沈積於基板上之後立即用作為保護層之鋅層覆蓋鋁。鋅因此係用於保護基本層免受氧化之保護材料。
鋅層特定而言小於10 μm，較佳地小於1 μm，更佳地小於100 nm，最佳地小於10 nm，且尤佳地小於1 nm。
在最低可能溫度下執行沈積，以免或至少抑制鋅在高溫下至鋁中之部分或甚至完全擴散。
在沈積鋅之情形中，鋁之溫度係小於600℃，較佳地小於500℃，更佳地小於400℃，最佳地小於300℃，尤佳地小於200℃，且甚至更佳地小於100℃。在特定情形中，甚至可使鋁有效地冷卻以便使溫度進一步降低。藉由最低可能溫度，立即阻礙沈積於鋁上之鋅之熱移動，且將該鋅較佳地保持於表面上，且因而其不擴散至鋁中。
另外，藉由低溫下鋅在鋁中之尤其低溶解度，阻礙鋅至鋁中之擴散。自此時起，鋅用作用於鋁之保護材料。若該系統曝露於含氧氣氛，則鋅至少主要地且較佳地完全地氧化，且因此特定而言藉由鋁相對於該氣氛係密封的來保護鋁免受氧化。
就此而論，考量鋅之標準電極電位係大約-0.76 V且鋁之標準電極電位係大約-1.66 V。因而，鋅比鋁貴重且因此無法作為犧牲陽極來化學上保護鋁。因此，緊密地施用鋅層以便在鋁與周邊區(特定而言，該氣氛)之間建立實體障壁。
為實施鋁與所要第二材料之間之黏結，首先自鋅移除所形成之任何氧化鋅。特定而言，藉由物理及/或化學手段執行氧化鋅之移除。根據本發明可設想氧化物之濺鍍、藉由減少酸之濕式化學移除或藉由氫或其他氣體還原劑(特定而言，一氧化碳)之還原。
在移除氧化鋅之後，儘快地執行使純鋅表面與待黏結之表面接觸。在相對於室溫之高溫下執行黏結過程。在此情形中，黏結溫度係大於25℃，較佳地大於100℃，更佳地大於200℃，最佳地大於300℃，尤佳地大於400℃，且甚至更佳地約380℃。根據相圖，鋅在大約350℃與大約380℃之間具有關於鋅在鋁中之高溶解度之極其大區域。
根據本發明，將所沈積之鋅之量設定為低的，使得在鋅在鋁中完全且主要地均勻分佈之後，未設定在高於1 mol%鋅之範圍中，更不必說在50 mol%至60 mol%鋅之範圍中之濃度。為不超過根據本發明所要之混合晶體之濃度範圍，大溶解度範圍在此方面係尤其適合的以避免任何局部濃度峰值。藉由相應地長時間熱處理，又藉由鋅在鋁中之均勻分佈來降低鋅在鋁中之任何濃度峰值，使得在冷卻過程之前達到之鋅在鋁中之最終端部濃度較佳地低於在室溫下鋅在鋁中之邊界溶解度。
根據本發明，較佳地在黏結過程期間，因而將該系統維持在此溫度範圍內達將全部鋅溶解於鋁中所需之時間長度。然而，即使在大約280℃處，鋅在鋁中之邊界溶解度仍高至足以實施根據本發明之方法。可藉由解已知鋅在鋁中之擴散常數之一維擴散方程來計算所需時間。然而，根據本發明維持該溫度達更短或更長時間可係有用的。
將使鋅溶解於鋁中之時間長度設定為特定而言大於1分鐘，較佳地大於10分鐘，更佳地大於30分鐘，最佳地大於1小時，尤佳地大於2小時，且甚至更佳地大於5小時。
在溶解過程期間，較佳地維持或甚至增加將彼此黏結之基板上之壓力。支配性壓力特定而言係大於1 Pa，較佳地大於100 Pa，更佳地大於10,000 Pa，最佳地大於1 MPa，尤佳地大於10 MPa，且甚至更佳地大於100 MPa。特定而言相對於標準晶圓所使用之力係大於10 N，較佳地大於100 N，最佳地大於1,000 N，尤佳地大於10,000 N，且甚至更佳地大於100,000 N。
在溶解過程期間，鋅較佳地溶解於全部鋁中。由於將被溶解之鋅之量係極小的而溶解鋁之量係極大的之事實，鋅在鋁中之總濃度係極小的。較佳地，鋅不僅排他地溶解於表面附近之鋁區域中，而且儘可能深地擴散至鋁中，較佳地如此深以使得在特定時間之後，已達成鋅在鋁中之均勻分佈。
在根據本發明之第一程序中，現在確保在冷卻過程期間，不超過鋅在鋁中之邊界溶解度，使得鋅總是保持完全地溶解於鋁中。因此，根據本發明防止在整個溫度範圍中鋅在鋁基質中之沈澱。此係根據本發明藉由以下步驟而執行：根據本發明選擇鋁層厚度對鋅層厚度之比率，且擴散過程運行達特定時間，直至鋅特定而言跨越整個可用空間完全地分佈於鋁中。鋅層厚度與鋁層厚度之間之比率在此情形中小於1，較佳地小於10-3 ，更佳地小於10-5 ，最佳地小於10-7 ，尤佳地小於10-9 ，且最佳地小於10-11 。
在根據本發明之另一程序中，以一方式設定鋅層厚度，使得在較高溫度下執行鋅至鋁中之特定而言至少主要的且較佳地完全的溶解，但在冷卻期間，產生造成鋅沈澱物之過飽和混合晶體。此等鋅沈澱物可積極地影響鋁之強度性質。其較佳地(特定而言)以與熱處理組合之方式造成鋁之強度增加。第四實施例
可應用根據本發明之理念之第四系統係鋁-鎂(簡稱為Al-Mg)系統。二元Al-Mg系統係由具有鎂在鋁中之邊界溶解度以及鋁在鎂中之邊界溶解度之兩個共晶體組成之二元系統。較佳地選擇鋁作為基本材料。
為保護鋁免受氧化，在成功沈積鎂材料之後立即用鎂層覆蓋鋁。鎂係基本上呈其純形式之極具反應性鹼土金屬。
鎂層特定而言小於10 μm，較佳地小於1 μm，更佳地小於100 nm，最佳地小於10 nm，且尤佳地小於1 nm。
在最低可能溫度下執行沈積，以免或至少抑制在高溫下鎂在鋁中之部分或甚至完全擴散。
在沈積鎂之情形中，鋁之溫度係小於600℃，較佳地小於500℃，更佳地小於400℃，最佳地小於300℃，尤佳地小於200℃，且甚至更佳地小於100℃。在特定情形中，甚至可使鋁有效地冷卻以便使溫度進一步降低。藉由最低可能溫度，立即阻礙沈積於鋁上之鎂之熱移動，且將該鎂較佳地保持於表面上，且因而其不擴散至鋁中。
另外，藉由低溫下鎂在鋁中之尤其低溶解度來阻礙鎂至鋁中之擴散。自此時開始，鎂用作用於鋁之保護材料。若該系統曝露於含氧氣氛，則鎂較佳地氧化且因此保護鋁。
就此而論，考量鎂之標準電極電位係大約-2.36 V且鋁之標準電極電位係大約-1.66 V。因而，鎂係比鋁更具鹼性之材料且因此能夠作為犧牲陽極來化學上保護鋁。或許甚至將可設想，經沈積鎂直接用作用於已經至少部分地形成或非完全地移除之氧化鋁之還原劑。還原過程可藉由單獨的額外熱處理步驟來執行且較佳地將覆蓋有鎂之氧化鋁還原以藉助形成氧化鎂來形成純鋁。在下文中，特定而言，發現本發明之獨立態樣與所揭示之任何額外方法特徵組合將係有效的且將可予以主張。
為實施鋁與所要第二材料之間之黏結，必須首先自鎂移除所形成之任何氧化鎂。藉由物理及/或化學手段執行氧化鎂之移除。根據本發明可設想氧化物之濺鍍、藉由減小酸之濕式化學移除或藉由氫或其他氣體還原劑之還原。就此而論將考量，氧化鎂應係僅藉由濕式化學手段可能很難完全地移除之相當穩定之結構；因此，根據本發明之物理方法係更適合的。
在移除氧化鎂之後，儘快地執行使純鎂表面與待黏結之表面接觸。在高溫下執行黏結過程。在此情形中，黏結溫度係大於25℃，較佳地大於100℃，更佳地大於200℃，最佳地大於300℃，尤佳地大於400℃，且甚至更佳地約426℃。
根據相圖，鋁在大約452℃下具有對鎂之大約16 mol%之最大溶解度。然而，若期望防止在邊界區中形成液相且僅假定固態鎂溶解於固態鋁中，則較佳黏結溫度低於上文述及之452℃。在此溫度範圍中，鎂在鋁中之溶解度仍總是足夠高的以產生鎂在鋁中之主要溶解。根據本發明，維持該溫度達鎂在鋁中特定而言主要地(較佳地完全地)溶解所需之時間。可藉由解已知鎂在鋁中之擴散常數之一維擴散方程來計算所需時間。根據本發明，維持該溫度達更短或更長時間可係有用的。
將使鎂溶解於鋁中之時間長度設定為特定而言大於1分鐘，較佳地大於10分鐘，更佳地大於30分鐘，最佳地大於1小時，尤佳地大於2小時，且甚至更佳地大於5小時。
在溶解過程期間，較佳地維持或增加將彼此黏結之基板上之壓力。支配性壓力係特定而言大於1 Pa，較佳地大於100 Pa，更佳地大於10,000 Pa，最佳地大於1 MPa，尤佳地大於10 MPa，且甚至更佳地大於100 MPa。作用於晶圓上之力係大於10 N，較佳地大於100 N，最佳地大於1,000 N，尤佳地大於10,000 N，且甚至更佳地大於100,000 N。
在溶解過程期間，鎂較佳地溶解於全部鋁中。由於將被溶解之鎂之量係極低的且溶解鋁之量係極大的之事實，鎂在鋁中之總濃度係極小的。較佳地，鎂不僅排他地溶解於表面附近之鋁區域中，而且儘可能深地擴散至鋁中，較佳地如此深以使得在特定時間之後，已達成鎂在鋁中之均勻分佈。
在根據本發明之第一程序中，本發明提供在冷卻過程期間，不會造成超過鎂在鋁中之邊界溶解度，使得鎂總是保持完全溶解於鋁中。因此，根據本發明防止在整個溫度範圍中在鋁基質中之化學計量鋁-鎂相之沈澱。此係根據本發明藉由以下步驟而執行：根據本發明選擇鋁層厚度對鎂層厚度之比率，以及為擴散過程提供足夠時間，直至鎂基本上跨越整個可用空間完全地分佈於鋁中。鎂層厚度與鋁層厚度之間之比率經選擇為特定而言小於1，較佳地小於10-3 ，更佳地小於10-5 ，最佳地小於10-7 ，尤佳地小於10-9 ，且最佳地小於10-11 。
在根據本發明之替代程序中，以一方式設定鎂層厚度，使得在較高溫度下執行鎂之特定而言主要的(較佳地完全的)溶解，但在冷卻期間，產生導致化學計量鋁-鎂相之沈澱之過飽和混合晶體。鋁-鎂相沈澱物可積極地影響鋁之強度性質。其較佳地(特定而言)以與熱處理組合之方式造成鋁之強度增加。
在相當特定實施例中，在沈積保護材料之前研磨及/或拋光基本材料。在此情形中，其造成表面之平坦化，此對稍後黏結過程具有決定性之重要性。平均粗糙度及/或二次粗糙度係小於100 μm，較佳地小於10 μm，更佳地小於1 μm，最佳地小於100 nm，尤佳地小於10 nm，且甚至更佳地小於1 nm。拋光可藉由完全地機械及/或化學手段而發生。最佳係化學機械拋光(英文：chemical mechanical polishing，CMP)。
若氧化層已形成於基本材料上，則較佳地已藉由上文述及之方法移除了該氧化層。若藉由上文述及之方法之氧化物之移除並非令人滿意的，則可另外地使用已述及之使用還原氣體及/或酸移除氧化物之方法(諸如，舉例而言濺鍍)。在氧化物之平面化及選用純化之後，然後執行保護層之塗佈。
對於根據本發明之所有實施例，根據本發明之有利實施例，稍後發生之第二熱處理過程之黏結過程可特定而言空間上單獨地發生係適用的。在黏結單元中，較佳地僅執行實際黏結過程。黏結過程特定而言持續小於5小時，較佳地小於1小時，更佳地小於30分鐘，最佳地小於15分鐘，且尤佳地小於5分鐘。
一旦黏結步驟完成且在兩個基板之間存在足夠高之黏著力，便可自黏結器移除經黏結基板對以便在另一單元中進行進一步處理(特定而言，熱處理)。此熱處理單元較佳地係批量單元，因而係可同時或甚至連續地容納大量晶圓之單元。根據本發明執行此熱處理單元中之熱處理達特定而言久於5分鐘，較佳地久於30分鐘，更佳地久於1小時，且最佳地久於5小時。此熱處理單元中之溫度較佳地係可調整的，較佳地可沿著路徑及/或依據時間進行調整，使得經處理基板可貫穿準確溫度分佈曲線。所使用之溫度係特定而言大於25℃，較佳地大於100℃，更佳地大於300℃，更佳地大於500℃，且尤佳地大於800℃。熱處理可較佳地在惰性氣體氣氛中發生以便保護基板之開放表面免受不必要的或非意欲之氧化。
在此熱處理設備中，可執行所有可設想之熱處理步驟。特定而言，將可設想僅在熱處理單元中執行根據本發明之保護層至基本材料中之實際溶解。熱處理單元可將數對基板同時帶至將比黏結單元中之情形高之溫度。連續操作熱處理單元於一側上拿起基板對，(舉例而言)藉由裝配線將該等基板對連續地傳送穿過該單元，且又將該等基板對釋放於另一端上，在該連續操作熱處理單元之情形中，甚至將可設想隨時間且因而(特定而言)在恆定裝配線速度之情形中設定跨路徑之溫度梯度。然而，根據本發明，當在基板之間產生對應固態黏結不需要壓力時，應僅在黏結單元外部執行保護材料至基本材料中之擴散。
在形成基板之間之成功接觸及成功黏結之後，特定而言在根據本發明保護材料溶解至基本材料中之後，嘗試達成結構之再結晶，從而儘可能多地跨過兩個基本材料層之整個厚度起作用。若此再結晶尚未在實際黏結過程期間發生，則該過程可在熱處理單元中發生。
再結晶導致特定而言經由黏結邊界表面之顆粒之新構造，且因此產生沿著整個厚度延伸穿過之機械穩定的固態永久性基本材料層。由再結晶形成之新微觀結構具有最佳之實際所要結構，此乃因在此結構中，不再存在黏結邊界表面。較佳地使用用於該結構之至少部分地可控制之再結晶的方法。此等包含特定而言位錯密度之增加及/或相應高溫。
在大多數較佳實施例中，在(特定而言)與黏結器分離之外部熱處理單元中執行根據本發明保護材料在基本材料中之溶解以及該結構之再結晶。因此，黏結器可儘快地用於下一基板黏結。在相當特定實施例中，根據本發明之溶解過程以及再結晶同時發生。自較佳實施例之後續闡述以及基於圖式產生本發明之進一步優點、特徵及細節。該等圖式用以下諸圖展示。
1‧‧‧基本材料 2‧‧‧保護材料/保護層材料 3‧‧‧氧化物層 4‧‧‧基板/第一基板 5‧‧‧基板/第二基板 6‧‧‧共晶點 7‧‧‧混合晶體區 8‧‧‧邊界溶解度 8’‧‧‧邊界溶解度 9‧‧‧二相區 10‧‧‧二相區 11‧‧‧共晶溫度或共晶體 11’‧‧‧共析溫度或共析體 12‧‧‧混合晶體
圖1 二元Al-Ge相圖之繪示， 圖2 二元Al-Ga相圖之繪示， 圖3 二元Al-Zn相圖之繪示， 圖4 二元Al-Mg相圖之繪示， 圖5a 根據本發明之基板之實施例之圖解性剖面繪示，該基板具有由基本材料組成之全表面基本層以及由保護材料組成之經由對準之全表面保護層， 圖5b 根據圖5a之針對接觸/黏結步驟之圖解性剖面繪示，及 圖5c 根據圖5a之依據黏結步驟之圖解性剖面繪示。 圖1展示藉由舉例方式之第一二元Al-Ge系統。根據本發明之相圖中之重要部分係混合晶體區7。混合晶體區7藉由邊界溶解度8與二相區9、10分離。針對鍺之邊界溶解度隨著溫度降低而降低，自共晶溫度或共晶體11開始。針對鍺之邊界溶解度亦隨著溫度增加而降低，自共晶溫度或共晶體11開始。 圖2展示藉由舉例方式之第二二元Al-Ga系統。相圖中根據本發明之重要部分係混合晶體區7。混合晶體區7藉由邊界溶解度8與二相區9、10分離。針對鎵之邊界溶解度隨著溫度降低而降低，自共晶溫度或共晶體11開始。針對鎵之邊界溶解度亦隨著溫度增加而降低，自共晶溫度或共晶體11開始。共晶體藉由處於極靠近純鍺濃度處之共晶點6之降級係特性的。 圖3展示藉由舉例方式之第三二元Al-Zn系統。相圖中根據本發明之重要部分係混合晶體區7。混合晶體區7在此處係極主要的。在約370℃溫度處，達到大於65 mol%鋅。混合晶體區7藉由邊界溶解度8'與二相區10分離。針對鋅之邊界溶解度隨著溫度降低而降低，自共析溫度或共析體11'開始。 圖4展示藉由舉例方式之第四二元Al-Mg系統。相圖中根據本發明之重要部分係混合晶體區7。混合晶體區7藉由邊界溶解度8與二相區9、10分離。針對鎂之邊界溶解度隨著溫度降低而降低，自共晶溫度或共晶體11開始。針對鎂之邊界溶解度亦隨著溫度增加而降低，自共晶溫度或共晶體11開始。 圖5a展示根據本發明之儘可能簡單之系統，該系統由第一基板4及第二基板5組成。基板4及5兩者塗佈有基本材料1及保護材料2。在根據本發明之實施例中，基本材料1及保護材料2不必施用於第一基板4上之整個表面上而是在黏結之前經受特定結構化。在此步驟中，已移除保護材料2之可能氧化層。 圖5b展示兩個基板4及5之接觸或黏結步驟。若兩個基板經結構化，則前一定向步驟必須在實際接觸或黏結步驟發生之前將兩個基板定向至彼此。 最後，圖5c展示藉由保護層材料2擴散至基本材料1中產生及執行之混合晶體12。
1‧‧‧基本材料
2‧‧‧保護材料/保護層材料
4‧‧‧基板/第一基板
5‧‧‧基板/第二基板
12‧‧‧混合晶體

Claims (20)

  1. 一種用於黏結第一基板與第二基板之方法，該方法包括：於該第一基板之黏結側上，施用可氧化基本材料以作為基本層；用保護層來至少部分地覆蓋該基本層，該保護層具有小於100nm之厚度，且該保護層係由含有至少一種選自由Si、Se、C、O及Te所構成群組之非金屬化學元素之保護材料所組成；及黏結該第一與第二基板，其中該保護材料，於黏結期間，完全溶解於該可氧化基本材料中。
  2. 如請求項1之方法，其中該基本材料係氧親和性的且由鋁及/或銅組成。
  3. 如請求項1之方法，其中該施用可氧化基本材料以作為基本層及/或用保護層來至少部分地覆蓋該基本層之步驟係藉由沈積來執行。
  4. 如請求項1之方法，其中該經覆蓋之基本層，至少主要地相對於大氣，以該保護層密封。
  5. 如請求項1之方法，其進一步包括：在該黏結步驟之前藉助以下方法中之一或多者處理該保護層：(a)化學氧化物移除；(b)物理氧化物移除，其係藉助電漿；及 (c)離子輔助化學蝕刻。
  6. 如請求項1之方法，其中該基本材料係一或多種選自以下構成群組之材料：金屬及具備對應摻雜之半導體。
  7. 如請求項6之方法，其中該保護材料進一步含有一或多種選自以下構成群組之材料：金屬及具備對應摻雜之半導體。
  8. 如請求項5之方法，其中該化學氧化物移除方法包括氣體還原劑及/或液體還原劑。
  9. 如請求項5之方法，其中該離子輔助化學蝕刻方法包括快速離子轟擊、研磨及/或拋光。
  10. 如請求項6之方法，其中該金屬係選自下述所構成群組：Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn、Zn及Ga。
  11. 如請求項6之方法，其中該鹼金屬係選自下述所構成群組：Li、Na、K、Rb及Cs。
  12. 如請求項6之方法，其中該鹼土金屬係選自下述所構成群組：Mg、Ca、Sr及Ra。
  13. 如請求項6之方法，其中該半導體係選自下述所構成群組：元素半導體及化合物半導體。
  14. 如請求項7之方法，其中該半導體係選自下述所構成群組：元素半導體及化合物半導體。
  15. 如請求項13之方法，其中該元素半導體係選自下述所構成群組：Si、Ge、Se、Te及Sn。
  16. 如請求項14之方法，其中該元素半導體係選自下述所構成群組：Si、Ge、Se、Te及Sn。
  17. 如請求項13之方法，其中該化合物半導體係選自下述所構成群組：GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC及SiGe。
  18. 如請求項14之方法，其中該化合物半導體係選自下述所構成群組：GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC及SiGe。
  19. 如請求項7之方法，其中該金屬係選自下述所構成群組：Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn、Zn及Ga，其中該鹼金屬係選自下述所構成群組：Li、Na、K、Rb及Cs，及其中該鹼土金屬係選自下述所構成群組：Mg、Ca、Sr及Ba。
  20. 一種用於黏結第一基板與第二基板之方法，該方法包括：於該第一基板之黏結側上，施用可氧化基本材料以作為基本層；用保護層來至少部分地覆蓋該基本層，該保護層具有小於100nm之厚度，且該保護層係由含有至少一種選自由Si、Se、Te、C、O及B所構成群組之非金屬化學元素之保護材料所組成；及黏結該第一與第二基板，其中該保護材料，於黏結期間，完全溶解於該基本材料中。
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