DE112013007187A5 - Verfahren zum Aufbringen einer Bondschicht - Google Patents
Verfahren zum Aufbringen einer Bondschicht Download PDFInfo
- Publication number
- DE112013007187A5 DE112013007187A5 DE112013007187.8T DE112013007187T DE112013007187A5 DE 112013007187 A5 DE112013007187 A5 DE 112013007187A5 DE 112013007187 T DE112013007187 T DE 112013007187T DE 112013007187 A5 DE112013007187 A5 DE 112013007187A5
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- Germany
- Prior art keywords
- applying
- bonding layer
- bonding
- layer
- Prior art date
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0104—Chemical-mechanical polishing [CMP]
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- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Wire Bonding (AREA)
- Laminated Bodies (AREA)
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Applications Claiming Priority (1)
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PCT/EP2013/069003 WO2015036032A1 (de) | 2013-09-13 | 2013-09-13 | Verfahren zum aufbringen einer bondschicht |
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DE112013007187A5 true DE112013007187A5 (de) | 2016-03-10 |
DE112013007187B4 DE112013007187B4 (de) | 2023-08-10 |
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JP (1) | JP6336600B2 (de) |
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SG (1) | SG11201601923VA (de) |
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CH717141B1 (fr) * | 2019-01-16 | 2023-12-15 | Patek Philippe Sa Geneve | Procédé d'assemblage de composants horlogers. |
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DE60209947T2 (de) * | 2001-01-09 | 2007-02-22 | Metabyte Networks, Inc., Fremont | System, Verfahren und Software für die Bereitstellung einer gezielten Werbung durch Benutzerprofildatenstruktur basierend auf Benutzerpräferenzen |
JP4136844B2 (ja) * | 2002-08-30 | 2008-08-20 | 富士電機ホールディングス株式会社 | 電子部品の実装方法 |
US20070152025A1 (en) | 2004-03-02 | 2007-07-05 | Fuji Electric Holdings Co., Ltd. | Electronic part mounting method |
JP4325571B2 (ja) * | 2005-02-28 | 2009-09-02 | 株式会社日立製作所 | 電子装置の製造方法 |
US8736081B2 (en) * | 2005-08-26 | 2014-05-27 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with keeper layer |
US7569926B2 (en) * | 2005-08-26 | 2009-08-04 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
JP4552968B2 (ja) * | 2007-05-29 | 2010-09-29 | 住友電気工業株式会社 | 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板 |
DE102008040775A1 (de) * | 2008-07-28 | 2010-02-04 | Robert Bosch Gmbh | Verkapselung, MEMS sowie Verfahren zum selektiven Verkapseln |
EP2363373A1 (de) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Procédé de collage pour systèmes micro et nano sensibles |
WO2011108166A1 (ja) * | 2010-03-03 | 2011-09-09 | シャープ株式会社 | 表示装置およびその駆動方法、ならびに液晶表示装置 |
JP2012079935A (ja) | 2010-10-01 | 2012-04-19 | Fujikura Ltd | 複合基板の製造方法、及び複合基板 |
US8377798B2 (en) | 2010-11-10 | 2013-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and structure for wafer to wafer bonding in semiconductor packaging |
US20120145308A1 (en) | 2010-12-08 | 2012-06-14 | Jiangwei Feng | Methods for anodic bonding material layers to one another and resultant apparatus |
JP5919641B2 (ja) | 2011-04-27 | 2016-05-18 | 富士通株式会社 | 半導体装置およびその製造方法並びに電子装置 |
US9054121B2 (en) * | 2011-10-24 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS structures and methods for forming the same |
EP2600389B1 (de) | 2011-11-29 | 2020-01-15 | IMEC vzw | Verfahren zum Bonden von Halbleitersubstraten |
KR102306976B1 (ko) * | 2013-09-13 | 2021-09-30 | 에베 그룹 에. 탈너 게엠베하 | 접합 레이어 도포 방법 |
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