SG11201601923VA - Method for applying a bonding layer - Google Patents
Method for applying a bonding layerInfo
- Publication number
- SG11201601923VA SG11201601923VA SG11201601923VA SG11201601923VA SG11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA
- Authority
- SG
- Singapore
- Prior art keywords
- applying
- bonding layer
- bonding
- layer
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0104—Chemical-mechanical polishing [CMP]
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- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
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- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
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- H01L2924/1026—Compound semiconductors
- H01L2924/1082—Other
- H01L2924/10823—Copper indium selenide, CIS [CuInSe2]
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2013/069003 WO2015036032A1 (en) | 2013-09-13 | 2013-09-13 | Method for applying a bonding layer |
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SG11201601923VA true SG11201601923VA (en) | 2016-04-28 |
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SG11201601923VA SG11201601923VA (en) | 2013-09-13 | 2013-09-13 | Method for applying a bonding layer |
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US (3) | US9627349B2 (en) |
JP (1) | JP6336600B2 (en) |
KR (3) | KR102184239B1 (en) |
CN (3) | CN105517947B (en) |
AT (2) | AT518702A5 (en) |
DE (1) | DE112013007187B4 (en) |
SG (1) | SG11201601923VA (en) |
TW (4) | TWI750526B (en) |
WO (1) | WO2015036032A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102184239B1 (en) * | 2013-09-13 | 2020-11-30 | 에베 그룹 에. 탈너 게엠베하 | Method for applying a bonding layer |
WO2020148626A1 (en) * | 2019-01-16 | 2020-07-23 | Patek Philippe Sa Geneve | Method for brazing clock-making components |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1223757B1 (en) * | 2001-01-09 | 2006-03-22 | Metabyte Networks, Inc. | System, method, and software application for targeted advertising via behavioral model clustering, and preference programming based on behavioral model clusters |
JP4136844B2 (en) * | 2002-08-30 | 2008-08-20 | 富士電機ホールディングス株式会社 | Electronic component mounting method |
EP1734570A4 (en) | 2004-03-02 | 2008-03-05 | Fuji Electric Holdings | Method for packaging electronic component |
JP4325571B2 (en) * | 2005-02-28 | 2009-09-02 | 株式会社日立製作所 | Manufacturing method of electronic device |
US8736081B2 (en) * | 2005-08-26 | 2014-05-27 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with keeper layer |
US7569926B2 (en) * | 2005-08-26 | 2009-08-04 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
JP4552968B2 (en) * | 2007-05-29 | 2010-09-29 | 住友電気工業株式会社 | Compound semiconductor substrate polishing method, compound semiconductor substrate, compound semiconductor epi substrate manufacturing method, and compound semiconductor epi substrate |
DE102008040775A1 (en) * | 2008-07-28 | 2010-02-04 | Robert Bosch Gmbh | Encapsulation, MEMS and selective encapsulation |
EP2363373A1 (en) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Bonding process for sensitive micro-and nano-systems |
JP5734951B2 (en) * | 2010-03-03 | 2015-06-17 | シャープ株式会社 | Display device, driving method thereof, and liquid crystal display device |
JP2012079935A (en) * | 2010-10-01 | 2012-04-19 | Fujikura Ltd | Method for manufacturing composite substrate, and composite substrate |
US8377798B2 (en) | 2010-11-10 | 2013-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and structure for wafer to wafer bonding in semiconductor packaging |
US20120145308A1 (en) * | 2010-12-08 | 2012-06-14 | Jiangwei Feng | Methods for anodic bonding material layers to one another and resultant apparatus |
JP5919641B2 (en) | 2011-04-27 | 2016-05-18 | 富士通株式会社 | Semiconductor device, method for manufacturing the same, and electronic device |
US9054121B2 (en) * | 2011-10-24 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS structures and methods for forming the same |
EP2600389B1 (en) * | 2011-11-29 | 2020-01-15 | IMEC vzw | Method for bonding semiconductor substrates |
KR102184239B1 (en) * | 2013-09-13 | 2020-11-30 | 에베 그룹 에. 탈너 게엠베하 | Method for applying a bonding layer |
-
2013
- 2013-09-13 KR KR1020207005479A patent/KR102184239B1/en active IP Right Grant
- 2013-09-13 KR KR1020167006613A patent/KR102084291B1/en active IP Right Grant
- 2013-09-13 AT ATA9472/2013A patent/AT518702A5/en not_active Application Discontinuation
- 2013-09-13 WO PCT/EP2013/069003 patent/WO2015036032A1/en active Application Filing
- 2013-09-13 JP JP2016541823A patent/JP6336600B2/en active Active
- 2013-09-13 CN CN201380079527.1A patent/CN105517947B/en active Active
- 2013-09-13 AT ATA232/2022A patent/AT525410A1/en unknown
- 2013-09-13 SG SG11201601923VA patent/SG11201601923VA/en unknown
- 2013-09-13 US US14/909,157 patent/US9627349B2/en active Active
- 2013-09-13 CN CN201910183859.3A patent/CN110085526B/en active Active
- 2013-09-13 CN CN201910183876.7A patent/CN110071049B/en active Active
- 2013-09-13 DE DE112013007187.8T patent/DE112013007187B4/en active Active
- 2013-09-13 KR KR1020207033596A patent/KR102306976B1/en active IP Right Grant
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- 2014-08-05 TW TW108139816A patent/TWI750526B/en active
- 2014-08-05 TW TW103126810A patent/TWI630254B/en not_active IP Right Cessation
- 2014-08-05 TW TW107117702A patent/TWI679264B/en active
- 2014-08-05 TW TW108110542A patent/TWI677552B/en active
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- 2017-02-24 US US15/441,741 patent/US9911713B2/en active Active
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