SG11201601923VA - Method for applying a bonding layer - Google Patents

Method for applying a bonding layer

Info

Publication number
SG11201601923VA
SG11201601923VA SG11201601923VA SG11201601923VA SG11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA SG 11201601923V A SG11201601923V A SG 11201601923VA
Authority
SG
Singapore
Prior art keywords
applying
bonding layer
bonding
layer
Prior art date
Application number
SG11201601923VA
Other languages
English (en)
Inventor
Markus Wimplinger
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201601923VA publication Critical patent/SG11201601923VA/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00Assembling of devices or systems from individually processed components
    • B81C3/001Bonding of two components
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00269Bonding of solid lids or wafers to the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0104Chemical-mechanical polishing [CMP]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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    • B81C2201/013Etching
    • B81C2201/0132Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
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    • B81C2203/03Bonding two components
    • B81C2203/033Thermal bonding
    • B81C2203/036Fusion bonding
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Contacts (AREA)
SG11201601923VA 2013-09-13 2013-09-13 Method for applying a bonding layer SG11201601923VA (en)

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PCT/EP2013/069003 WO2015036032A1 (de) 2013-09-13 2013-09-13 Verfahren zum aufbringen einer bondschicht

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DE60209947T2 (de) * 2001-01-09 2007-02-22 Metabyte Networks, Inc., Fremont System, Verfahren und Software für die Bereitstellung einer gezielten Werbung durch Benutzerprofildatenstruktur basierend auf Benutzerpräferenzen
JP4136844B2 (ja) * 2002-08-30 2008-08-20 富士電機ホールディングス株式会社 電子部品の実装方法
US20070152025A1 (en) 2004-03-02 2007-07-05 Fuji Electric Holdings Co., Ltd. Electronic part mounting method
JP4325571B2 (ja) * 2005-02-28 2009-09-02 株式会社日立製作所 電子装置の製造方法
US8736081B2 (en) * 2005-08-26 2014-05-27 Innovative Micro Technology Wafer level hermetic bond using metal alloy with keeper layer
US7569926B2 (en) * 2005-08-26 2009-08-04 Innovative Micro Technology Wafer level hermetic bond using metal alloy with raised feature
JP4552968B2 (ja) * 2007-05-29 2010-09-29 住友電気工業株式会社 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板
DE102008040775A1 (de) * 2008-07-28 2010-02-04 Robert Bosch Gmbh Verkapselung, MEMS sowie Verfahren zum selektiven Verkapseln
EP2363373A1 (de) * 2010-03-02 2011-09-07 SensoNor Technologies AS Procédé de collage pour systèmes micro et nano sensibles
WO2011108166A1 (ja) * 2010-03-03 2011-09-09 シャープ株式会社 表示装置およびその駆動方法、ならびに液晶表示装置
JP2012079935A (ja) 2010-10-01 2012-04-19 Fujikura Ltd 複合基板の製造方法、及び複合基板
US8377798B2 (en) 2010-11-10 2013-02-19 Taiwan Semiconductor Manufacturing Co., Ltd Method and structure for wafer to wafer bonding in semiconductor packaging
US20120145308A1 (en) 2010-12-08 2012-06-14 Jiangwei Feng Methods for anodic bonding material layers to one another and resultant apparatus
JP5919641B2 (ja) 2011-04-27 2016-05-18 富士通株式会社 半導体装置およびその製造方法並びに電子装置
US9054121B2 (en) * 2011-10-24 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS structures and methods for forming the same
EP2600389B1 (de) 2011-11-29 2020-01-15 IMEC vzw Verfahren zum Bonden von Halbleitersubstraten
KR102306976B1 (ko) * 2013-09-13 2021-09-30 에베 그룹 에. 탈너 게엠베하 접합 레이어 도포 방법

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TWI677552B (zh) 2019-11-21
CN105517947A (zh) 2016-04-20
JP6336600B2 (ja) 2018-06-06
AT518702A5 (de) 2017-12-15
US10438925B2 (en) 2019-10-08
US20170162538A1 (en) 2017-06-08
KR20200133836A (ko) 2020-11-30
TW201829692A (zh) 2018-08-16
CN110085526A (zh) 2019-08-02
KR102184239B1 (ko) 2020-11-30
KR20160053937A (ko) 2016-05-13
US9627349B2 (en) 2017-04-18
TWI679264B (zh) 2019-12-11
KR20200023525A (ko) 2020-03-04
CN110071049A (zh) 2019-07-30
US20160190092A1 (en) 2016-06-30
CN110085526B (zh) 2023-11-28
TW202000820A (zh) 2020-01-01
DE112013007187A5 (de) 2016-03-10
JP2016532312A (ja) 2016-10-13
US9911713B2 (en) 2018-03-06
DE112013007187B4 (de) 2023-08-10
CN110071049B (zh) 2023-12-08
TW201922989A (zh) 2019-06-16
KR102306976B1 (ko) 2021-09-30
TW201518464A (zh) 2015-05-16
AT525410A1 (de) 2023-03-15
TWI750526B (zh) 2021-12-21
WO2015036032A1 (de) 2015-03-19
US20180145048A1 (en) 2018-05-24
CN105517947B (zh) 2019-04-23
KR102084291B1 (ko) 2020-03-03

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