FI20135707A - Menetelmä ja laitteisto substraatin pinnan pinnoittamiseksi - Google Patents

Menetelmä ja laitteisto substraatin pinnan pinnoittamiseksi Download PDF

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Publication number
FI20135707A
FI20135707A FI20135707A FI20135707A FI20135707A FI 20135707 A FI20135707 A FI 20135707A FI 20135707 A FI20135707 A FI 20135707A FI 20135707 A FI20135707 A FI 20135707A FI 20135707 A FI20135707 A FI 20135707A
Authority
FI
Finland
Prior art keywords
coating
substrate surface
substrate
Prior art date
Application number
FI20135707A
Other languages
English (en)
Swedish (sv)
Other versions
FI126043B (fi
Inventor
Tapani Alasaarela
Pekka Soininen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20135707A priority Critical patent/FI126043B/fi
Priority to DE112014003000.7T priority patent/DE112014003000T5/de
Priority to PCT/FI2014/050527 priority patent/WO2014207316A1/en
Priority to CN201480037183.2A priority patent/CN105392915B/zh
Priority to US14/900,816 priority patent/US9708710B2/en
Priority to JP2016522681A priority patent/JP6681829B2/ja
Publication of FI20135707A publication Critical patent/FI20135707A/fi
Application granted granted Critical
Publication of FI126043B publication Critical patent/FI126043B/fi

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
FI20135707A 2013-06-27 2013-06-27 Menetelmä ja laitteisto substraatin pinnan pinnoittamiseksi FI126043B (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20135707A FI126043B (fi) 2013-06-27 2013-06-27 Menetelmä ja laitteisto substraatin pinnan pinnoittamiseksi
DE112014003000.7T DE112014003000T5 (de) 2013-06-27 2014-06-26 Verfahren und Vorrichtung zum Beschichten einer Oberfläche eines Substrats
PCT/FI2014/050527 WO2014207316A1 (en) 2013-06-27 2014-06-26 Method and apparatus for coating a surface of a substrate
CN201480037183.2A CN105392915B (zh) 2013-06-27 2014-06-26 用于涂覆基板表面的方法和设备
US14/900,816 US9708710B2 (en) 2013-06-27 2014-06-26 Atomic layer deposition method for coating a substrate surface using successive surface reactions with multiple precursors
JP2016522681A JP6681829B2 (ja) 2013-06-27 2014-06-26 基板の表面をコーティングするための方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20135707A FI126043B (fi) 2013-06-27 2013-06-27 Menetelmä ja laitteisto substraatin pinnan pinnoittamiseksi

Publications (2)

Publication Number Publication Date
FI20135707A true FI20135707A (fi) 2014-12-28
FI126043B FI126043B (fi) 2016-06-15

Family

ID=52141153

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20135707A FI126043B (fi) 2013-06-27 2013-06-27 Menetelmä ja laitteisto substraatin pinnan pinnoittamiseksi

Country Status (6)

Country Link
US (1) US9708710B2 (fi)
JP (1) JP6681829B2 (fi)
CN (1) CN105392915B (fi)
DE (1) DE112014003000T5 (fi)
FI (1) FI126043B (fi)
WO (1) WO2014207316A1 (fi)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI125341B (fi) * 2012-07-09 2015-08-31 Beneq Oy Laitteisto ja menetelmä substraatin käsittelemiseksi
US9598769B2 (en) * 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition
FI126315B (fi) * 2014-07-07 2016-09-30 Beneq Oy Suutinpää, laitteisto ja menetelmä substraatin pinnan altistamiseksi peräkkäisille pintareaktioille
CN108291303B (zh) * 2015-12-17 2020-07-21 倍耐克有限公司 涂覆前体喷嘴和喷嘴头
FR3046800A1 (fr) * 2016-01-18 2017-07-21 Enhelios Nanotech Procede et dispositif de depot chimique en phase gazeuse a flux alternes.
CN106048561B (zh) * 2016-08-17 2019-02-12 武汉华星光电技术有限公司 一种原子层沉积装置及方法
FI128453B (fi) * 2017-10-18 2020-05-29 Beneq Oy Laitteisto substraatin pinnan prosessoimiseksi
US10916704B2 (en) 2018-04-03 2021-02-09 Universal Display Corporation Vapor jet printing
FI129731B (fi) * 2018-04-16 2022-08-15 Beneq Oy Suutinpää, laitteisto ja menetelmä

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6746539B2 (en) 2001-01-30 2004-06-08 Msp Corporation Scanning deposition head for depositing particles on a wafer
JP4356113B2 (ja) * 2005-08-08 2009-11-04 セイコーエプソン株式会社 製膜方法、パターニング方法、光学装置の製造方法、および電子装置の製造方法
US8039052B2 (en) 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials
US7972898B2 (en) * 2007-09-26 2011-07-05 Eastman Kodak Company Process for making doped zinc oxide
EP2159304A1 (en) 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
US8153529B2 (en) * 2009-11-20 2012-04-10 Eastman Kodak Company Method for selective deposition and devices
EP2362001A1 (en) * 2010-02-25 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and device for layer deposition
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
EP2557198A1 (en) * 2011-08-10 2013-02-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US20130143415A1 (en) * 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
US20140061795A1 (en) * 2012-08-31 2014-03-06 David H. Levy Thin film transistor including improved semiconductor interface
US9598769B2 (en) * 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition

Also Published As

Publication number Publication date
CN105392915A (zh) 2016-03-09
FI126043B (fi) 2016-06-15
US9708710B2 (en) 2017-07-18
DE112014003000T5 (de) 2016-03-31
CN105392915B (zh) 2018-11-13
JP6681829B2 (ja) 2020-04-15
WO2014207316A1 (en) 2014-12-31
US20160168703A1 (en) 2016-06-16
JP2016527395A (ja) 2016-09-08

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