TWI747825B - 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積 - Google Patents

藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積 Download PDF

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Publication number
TWI747825B
TWI747825B TW105116371A TW105116371A TWI747825B TW I747825 B TWI747825 B TW I747825B TW 105116371 A TW105116371 A TW 105116371A TW 105116371 A TW105116371 A TW 105116371A TW I747825 B TWI747825 B TW I747825B
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Taiwan
Prior art keywords
tungsten
substrate
containing precursor
layer
chamber
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TW105116371A
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English (en)
Chinese (zh)
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TW201715067A (zh
Inventor
亞當 揚德爾
珊傑 戈皮納思
巴曉蘭
拉許納 胡瑪雲
米歇爾 丹納克
勞倫斯 施洛斯
于天驊
思魯提 維克 湯貝爾
凱翰 阿畢迪 艾許地安尼
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美商蘭姆研究公司
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Priority claimed from US14/723,270 external-priority patent/US9613818B2/en
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201715067A publication Critical patent/TW201715067A/zh
Application granted granted Critical
Publication of TWI747825B publication Critical patent/TWI747825B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW105116371A 2015-05-27 2016-05-26 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積 TWI747825B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/723,270 2015-05-27
US14/723,270 US9613818B2 (en) 2015-05-27 2015-05-27 Deposition of low fluorine tungsten by sequential CVD process
US201662328759P 2016-04-28 2016-04-28
US62/328,759 2016-04-28

Publications (2)

Publication Number Publication Date
TW201715067A TW201715067A (zh) 2017-05-01
TWI747825B true TWI747825B (zh) 2021-12-01

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Family Applications (1)

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TW105116371A TWI747825B (zh) 2015-05-27 2016-05-26 藉由順序化學汽相沉積製程所進行的低氟含量之鎢的沉積

Country Status (3)

Country Link
JP (1) JP7092456B2 (enrdf_load_stackoverflow)
KR (1) KR102397797B1 (enrdf_load_stackoverflow)
TW (1) TWI747825B (enrdf_load_stackoverflow)

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TWI672737B (zh) * 2013-12-27 2019-09-21 美商蘭姆研究公司 允許低電阻率鎢特徵物填充之鎢成核程序
JP6788545B2 (ja) * 2017-04-26 2020-11-25 東京エレクトロン株式会社 タングステン膜を形成する方法
JP6946463B2 (ja) * 2017-06-05 2021-10-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ワードライン抵抗を低下させる方法
JP2020526669A (ja) * 2017-07-13 2020-08-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ タングステン核形成層を堆積させるための方法及び装置
KR102424993B1 (ko) 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
US10669160B2 (en) * 2018-04-30 2020-06-02 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide
KR102513403B1 (ko) * 2018-07-30 2023-03-24 주식회사 원익아이피에스 텅스텐 증착 방법
CN112533873A (zh) * 2018-08-17 2021-03-19 中央硝子株式会社 六氟化钨的制造方法
JP7138518B2 (ja) 2018-08-31 2022-09-16 東京エレクトロン株式会社 成膜方法及び成膜システム
CN111162039A (zh) * 2018-11-08 2020-05-15 长鑫存储技术有限公司 金属导电结构及半导体器件的制备方法
WO2020123987A1 (en) * 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
KR20200099112A (ko) 2019-02-13 2020-08-21 세종대학교산학협력단 Ald 공정에서 금속 전구체 환원용 환원제 조성물 및 금속 박막의 형성 방법
TWI831915B (zh) * 2019-02-20 2024-02-11 日商東京威力科創股份有限公司 半導體裝置之製造方法
KR20210141762A (ko) 2019-04-11 2021-11-23 램 리써치 코포레이션 고 단차 커버리지 (step coverage) 텅스텐 증착
US11447864B2 (en) * 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20210158419A (ko) 2019-05-22 2021-12-30 램 리써치 코포레이션 핵생성-프리 텅스텐 증착
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
JP2021038442A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW202206634A (zh) * 2020-06-30 2022-02-16 美商應用材料股份有限公司 在低溫下的選擇性鎢沉積
KR102847592B1 (ko) 2020-11-05 2025-08-18 세종대학교산학협력단 텅스텐 전구체, 이를 이용한 텅스텐 박막 증착 방법 및 증착 장치
WO2022108908A1 (en) * 2020-11-20 2022-05-27 Lam Research Corporation Low resistance pulsed cvd tungsten
US11515200B2 (en) * 2020-12-03 2022-11-29 Applied Materials, Inc. Selective tungsten deposition within trench structures
JP7733133B2 (ja) * 2021-05-07 2025-09-02 インテグリス・インコーポレーテッド モリブデンまたはタングステン材料の堆積方法
CN114420533B (zh) * 2021-12-08 2024-10-18 武汉新芯集成电路股份有限公司 在半导体晶片上制备钨的方法
CN119230478A (zh) * 2023-06-30 2024-12-31 北京北方华创微电子装备有限公司 沉积钨塞的工艺方法及半导体器件

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US20140319614A1 (en) * 2013-04-25 2014-10-30 GlobalFoundries, Inc. Finfet channel stress using tungsten contacts in raised epitaxial source and drain

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US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
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JP5864503B2 (ja) * 2013-09-30 2016-02-17 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体

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US20140319614A1 (en) * 2013-04-25 2014-10-30 GlobalFoundries, Inc. Finfet channel stress using tungsten contacts in raised epitaxial source and drain

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Publication number Publication date
JP2017008412A (ja) 2017-01-12
TW201715067A (zh) 2017-05-01
JP7092456B2 (ja) 2022-06-28
KR20160140448A (ko) 2016-12-07
KR102397797B1 (ko) 2022-05-12

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