TWI742098B - 釕（Ｒｕ）配線及該釕配線的製造方法 - Google Patents

釕（Ｒｕ）配線及該釕配線的製造方法 Download PDF

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Publication number
TWI742098B
TWI742098B TW106120930A TW106120930A TWI742098B TW I742098 B TWI742098 B TW I742098B TW 106120930 A TW106120930 A TW 106120930A TW 106120930 A TW106120930 A TW 106120930A TW I742098 B TWI742098 B TW I742098B
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Taiwan
Prior art keywords
film
ruthenium
wiring
mentioned
gas
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TW106120930A
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English (en)
Chinese (zh)
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TW201816162A (zh
Inventor
石坂忠大
藤里敏章
韓千洙
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日商東京威力科創股份有限公司
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Publication of TW201816162A publication Critical patent/TW201816162A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW106120930A 2016-07-06 2017-06-22 釕（Ｒｕ）配線及該釕配線的製造方法 TWI742098B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016134043 2016-07-06
JP2016-134043 2016-07-06
JP2016-216142 2016-11-04
JP2016216142A JP6785130B2 (ja) 2016-07-06 2016-11-04 ルテニウム配線およびその製造方法

Publications (2)

Publication Number Publication Date
TW201816162A TW201816162A (zh) 2018-05-01
TWI742098B true TWI742098B (zh) 2021-10-11

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TW106120930A TWI742098B (zh) 2016-07-06 2017-06-22 釕（Ｒｕ）配線及該釕配線的製造方法

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JP (1) JP6785130B2 (ja)
KR (1) KR102096143B1 (ja)
TW (1) TWI742098B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
JP2020043139A (ja) * 2018-09-06 2020-03-19 東京エレクトロン株式会社 埋め込み方法及び処理システム
JP7182970B2 (ja) * 2018-09-20 2022-12-05 東京エレクトロン株式会社 埋め込み方法及び処理システム
US11387112B2 (en) 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
JP7336884B2 (ja) * 2018-10-04 2023-09-01 東京エレクトロン株式会社 表面処理方法及び処理システム
KR20200093110A (ko) 2019-01-25 2020-08-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP7278164B2 (ja) 2019-07-11 2023-05-19 東京エレクトロン株式会社 ルテニウム膜の形成方法及び基板処理システム
JP7330046B2 (ja) * 2019-09-30 2023-08-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2001156024A (ja) * 1999-09-13 2001-06-08 Tokyo Electron Ltd ＴｉＮ系薄膜およびその成膜方法、成膜装置、ＴｉＮ系薄膜を含む膜構造体およびその製造方法、ならびに半導体装置
JP2003113500A (ja) * 2001-10-03 2003-04-18 Toshiba Corp 電解研磨方法

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JP4809961B2 (ja) 1998-08-07 2011-11-09 株式会社東芝 半導体装置及びその製造方法
US6824825B2 (en) * 1999-09-13 2004-11-30 Tokyo Electron Limited Method for depositing metallic nitride series thin film
KR20040002012A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
JP2004152864A (ja) * 2002-10-29 2004-05-27 Renesas Technology Corp 半導体装置
JP2006148075A (ja) 2004-10-19 2006-06-08 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
US7405154B2 (en) * 2006-03-24 2008-07-29 International Business Machines Corporation Structure and method of forming electrodeposited contacts
JP5487748B2 (ja) * 2009-06-16 2014-05-07 東京エレクトロン株式会社 バリヤ層、成膜方法及び処理システム
EP2434557A3 (en) * 2010-09-27 2018-02-21 Fujifilm Corporation Photoelectric conversion element, solid-state imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
JP5963456B2 (ja) * 2011-02-18 2016-08-03 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、及び基板処理方法
CN103854967B (zh) * 2012-11-30 2017-09-22 中国科学院微电子研究所 平坦化处理方法
US10079174B2 (en) * 2014-04-30 2018-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Composite contact plug structure and method of making same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156024A (ja) * 1999-09-13 2001-06-08 Tokyo Electron Ltd ＴｉＮ系薄膜およびその成膜方法、成膜装置、ＴｉＮ系薄膜を含む膜構造体およびその製造方法、ならびに半導体装置
JP2003113500A (ja) * 2001-10-03 2003-04-18 Toshiba Corp 電解研磨方法

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Publication number Publication date
JP2018014477A (ja) 2018-01-25
KR102096143B1 (ko) 2020-04-01
TW201816162A (zh) 2018-05-01
JP6785130B2 (ja) 2020-11-18
KR20180005607A (ko) 2018-01-16

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