TWI729023B - 拉伸應力與低接觸電阻的新材料以及形成方法 - Google Patents
拉伸應力與低接觸電阻的新材料以及形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000000463 material Substances 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 56
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 229910000967 As alloy Inorganic materials 0.000 claims abstract description 31
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 27
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims description 25
- 239000011574 phosphorus Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
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- 229910052799 carbon Inorganic materials 0.000 claims description 23
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 claims description 17
- CRJWFQWLUGZJMK-UHFFFAOYSA-N germanium;phosphane Chemical compound P.[Ge] CRJWFQWLUGZJMK-UHFFFAOYSA-N 0.000 claims description 16
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 claims description 13
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910000078 germane Inorganic materials 0.000 claims description 9
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 8
- 239000005052 trichlorosilane Substances 0.000 claims description 8
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- PZKOFHKJGUNVTM-UHFFFAOYSA-N trichloro-[dichloro(trichlorosilyl)silyl]silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)[Si](Cl)(Cl)Cl PZKOFHKJGUNVTM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
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- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 claims description 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 3
- MUDDKLJPADVVKF-UHFFFAOYSA-N trichlorogermane Chemical compound Cl[GeH](Cl)Cl MUDDKLJPADVVKF-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本發明大體上係關於用於在半導體元件上形成磊晶層的方法,包括用來形成具拉伸應力之鍺砷層的方法。該方法包括加熱放置在處理腔室內的基板,其中該基板包含矽,及使該基板的表面暴露於含鍺氣體與含砷氣體,藉以在該表面上形成具有4.5×1020
原子/立方公分之砷濃度的鍺砷合金。
Description
本發明實施例大體上係關於半導體製造製程及元件的領域,更明確言之,係關於用於在磊晶膜上磊晶成長矽材料的方法。
在半導體基板上製造微電子元件以形成積體電路時,在積體電路中的各種導電層彼此互相連接以使電子訊號在元件內傳播。此種元件的實例為互補金屬-氧化物-半導體(CMOS)場效電晶體(FET)或MOSFET。依摻雜劑的導電性而定,典型的MOSFET電晶體可包括p型-通道(PMOS)電晶體及n-型通道(NMOS)電晶體,然而PMOS具有p型通道,即在通道中是電洞負責進行傳導工作,及NMOS 具有n-型通道,即在通道中是電子負責傳導工作。
流過MOS電晶體之通道中的電流量與該通道中的載子移動率成正比。使用高移動率的MOS電晶體能使更多電流流動且從而有較快的電路效能。使通道中產生機械應力能提高MOS電晶體之通道中的載子移動率。處於壓縮應力下的通道(例如,成長在矽上矽-鍺通道層)具有顯著增強的電洞移動率以提供pMOS電晶體。處於拉伸應力下的通道(例如,成長在鬆弛矽-鍺上的矽通道薄層)可達到顯著增強的電子移動率以提供nMOS電晶體。
藉由形成一或多個磷重摻雜矽磊晶層或碳重摻雜矽磊晶層亦可形成處於拉伸應力下的nMOS電晶體通道。重摻雜矽磊晶層可用來降低接觸電阻。由於用於具有不同摻雜劑及不同摻雜劑濃度的磊晶製造條件可能有所不同,因此在當前及未來的技術世代中,接觸電阻會成為電晶體效能的主要限制因子。例如,當活化及達到高濃度的摻雜劑(例如高於4x1021
原子/立方公分)時,由於型態退化而使得高應變Si:P磊晶的擴散控制一直是個主要挑戰。此外,為了產生應變(strain)而在新材料中納入摻雜劑(例如,Ge或GeSn)可能在磊晶製程中帶來重大挑戰。
因此,在所屬技術領域中需要可在通道中提供拉伸應力及提供低串聯電阻的改良方法。
在一實施例中提供一種形成拉伸應力(tensile-stressed)鍺砷層的方法。該方法包括加熱放置在處理腔室內的基板,其中該基板包含矽,及使該基板的表面暴露於含鍺氣體及含砷氣體下以在該表面上形成具有4.5×1021
原子/立方公分至5×1020
原子/立方公分或更高之砷濃度的鍺砷合金。
在另一實施例中提供一種處理基板的方法。該方法包括將半導體基板定位在處理腔室內,其中該基板包括源極/汲極區域,使該基板暴露於含矽氣體及含砷氣體下以在該源極/汲極區域上形成具有4.5×1021
原子/立方公分至5×1021
原子/立方公分或更高之砷濃度的矽砷合金,其中該矽砷合金具有約1×1017
原子/立方公分至約1×1020
原子/立方公分或更高的碳濃度,及在該矽砷合金上形成電晶體通道區域。
在又另一實施例中提供一種結構。該結構包括:包含源極區域及汲極區域的基板、配置在該源極區域極該汲極區域之間的通道區域、配置在該通道區域之橫向外側處的源極延伸區域,其中該源極延伸區域是具有4.5×1021
原子/立方公分至5×1021
原子/立方公分或更高之砷濃度及約1×1017
原子/立方公分或更高之碳濃度的矽砷合金,及配置在該通道區域上方的閘極區域。
在又另一實施例中提供一種形成磷化鍺層的方法。該方法包括加熱放置在處理腔室內的基板且該處理腔室具有約10托耳至約100托耳的腔室壓力,在約400°C或更低的溫度下使該基板的表面暴露在含鍺氣體及含磷氣體下以在該表面上形成具有7.5x1019
原子/立方公分或更高之磷濃度的磷化鍺合金,其中以約3托耳(Torr)至約30托耳的分壓將該含磷氣體引入該處理腔室中。
本發明實施例大體上提供用於形成具有高砷濃度之矽、鍺或鍺-錫層的選擇性磊晶製程。在一示例性實施例中,該選擇性磊晶製程使用包含鍺源及砷摻雜劑源的氣體混合物,且該選擇性磊晶製程是在高於300托耳的高製程壓力及低於800°C的降低製程溫度下進行而允許形成具有4.5×1021
原子/立方公分至5×1020
原子/立方公分或更高之砷濃度的拉伸應力磊晶鍺層。約5×1020
原子/立方公分或更高的砷濃度會使MOSFET結構的載子移動率提高及提升元件效能。以下更詳細地論述各種不同實施例。
可在購自於應用材料公司(美國,加州,聖克拉拉)的CENTURA®
RP磊晶腔室中實踐本發明實施例。可預期的是,其他腔室(包括來自其他製造商的腔室)可能可用來實踐本發明實施例。
第1圖為根據本發明一實施例圖示形成磊晶層之方法的流程圖100。第2圖圖示根據第1圖之方法所製成之結構200的剖面圖。在方框102,使基板202定位在處理腔室內。文中使用的術語「基板(substrate)」意欲廣泛涵蓋具有表面且在該表面上可沈積材料層的物件或材料。基板可包括塊狀材料,例如矽(例如,可能含有摻雜劑的單晶矽)或可包括覆蓋在該塊狀材料上方的一或多層。基板可為平面基板或已圖案化的基板。已圖案化基板為可能在基板之處理表面內或處理表面上形成有電子特徵結構的基板。該基板可包含單晶表面及/或非單晶的第二表面,例如多晶或非晶質(amorphous)的表面。單晶表面可包括通常由諸如矽、鍺、矽鍺或矽碳等材料所製成的裸晶基板或沈積單晶層。多晶或非晶質表面可包括介電材料(例如氧化物或氮化物,尤其是氧化矽或氮化矽)及非晶矽表面。
將基板定位在處理腔室中可包括將一或更多個反應器條件,例如溫度、壓力及/或載氣(例如,Ar、N2
、H2
或He)流動速率調整至適合膜形成的條件。例如,在某些實施例中,該處理腔室中的溫度可經調整,使得在基板露出之矽表面處或矽表面附近所形成的反應區域或該基板表面本身為約850°C或更低,例如約750°C或更低。在一實例中,加熱該基板到約200°C至約800°C間的溫度,例如約250°C至約650°C間的溫度,例如約300°C至約600°C間的溫度。藉由加熱該基板至足以使製程試劑熱分解並在基板上沈積膜層的最低溫度可能使該最終元件的熱積存(thermal budget)減至最少。處理腔室內的壓力可加以調整,使得反應區域的壓力在約1托耳至約760托耳的範圍內,例如約90托耳至約300托耳的範圍內。在某些實施例中,可以約10 SLM(標準公升/分鐘)至40 SLM的流動速率使載氣(例如,氮氣)流入該處理腔室中。然而,應明白在某些實施例中可採用不同的載氣/稀釋氣體,可使用不同的流動速率,或可省略此(等)氣體。
在方框104,將含鍺氣體引入該處理腔室中。合適的含鍺氣體可包括,但不限於,鍺烷(GeH4
)、二鍺烷(Ge2
H6
)、三鍺烷(Ge3
H8
)、氯化鍺烷氣體,例如四氯化鍺(GeCl4
)、二氯鍺烷(GeH2
Cl2
)、三氯鍺烷(GeHCl3
)、六氯二鍺烷(Ge2
Cl6
)或上述任意兩種或兩種以上氣體的組合物。亦可使用任何合適的鹵化鍺化合物。在一使用鍺烷的實例中,可以約5 sccm至約100 sccm(例如,約10 sccm至約35 sccm、約15 sccm至約25 sccm、例如約20 sccm)的流動速率使鍺烷流入該處理腔室中。在某些實施例中,可以約300 sccm至約1500 sccm(例如約800 sccm)的流動速率使鍺烷流入該處理腔室中。
在方框106,將含砷氣體引入該處理腔室中。合適的含砷氣體可包括胂(arsine,AsH3
)或叔丁基胂(tertiary butyl arsine,TBA)。在某些實施例中,可將含碳化合物引入該處理腔室中。例如,當使用AsH3
作為砷源時,該含碳化合物可用來在所沈積的磊晶層中添加碳。示例性的含碳化合物可包括,但不限於,單甲基矽烷(MMS)、四甲基矽烷(TMS)或有機金屬前驅物,例如三丁基砷(tributyl arsenide,TBA)。
在一實施例中,以約10 sccm至約2500 sccm(例如,約500 sccm至約1500 sccm)的流動速率使胂流入該處理腔室中。該含碳化合物以約10 sccm至約2500 sccm(例如,約500 sccm至約1500 sccm)的流動速率流入該處理腔室中。非反應性的載氣/稀釋氣體(例如,氮氣)及/或反應性的載氣/稀釋氣體(例如,氫氣)可用來將該含砷氣體及/或含碳化合物供應至該處理腔室。例如,可使胂以約百分之一的比例稀釋在氫氣中。該載氣/稀釋氣體可具有約1 SLM至約100 SLM(例如約3 SLM至約30 SLM)的流動速率。
可思及方框104及方框106可能同時進行、實質同時進行或以任意期望的順序來進行。此外,儘管在本發明中論述了含砷氣體,但可思及,任何由在矽中之擴散係數比磷原子在矽中之擴散係數要小的摻雜劑原子所構成的氣體皆可用來在矽晶格結構中引發應力。在基板是由GeSn所形成的實施例中,可使用含銻氣體,例如三乙基銻(TESb)在GeSn中引發應力。
若有需要,可將一或多種摻雜劑氣體引入該處理腔室中以為該磊晶層提供期望的導電特性及各種電性特性,例如在電子元件所要求的受控制且期望之路徑中流動的方向性電子流。依據所期望之沈積磊晶層的導電特性而定,示例性的摻雜劑氣體可包括,但不限於,磷、硼、鎵或鋁。
在方框108,含鍺氣體與含砷氣體的混合物進行熱反應以形成具有拉伸應力的鍺砷合金,且該鍺砷合金具有大於4.5×1020
原子/立方公分的砷濃度,例如4.5×1021
原子/立方公分至5×1020
原子/立方公分或更高且可接受的誤差在±3%以內。在某些實施例中,該拉伸應力鍺砷合金可具有高達5×1021
原子/立方公分的砷濃度。
該鍺源與該砷源可在處理腔室的反應區域中進行反應,而得以在基板202的矽表面203上磊晶形成鍺砷合金204。鍺砷合金204可具有約250Å至約800Å(例如約500Å)的厚度。在不希望受理論約束的情況下,認為在4.5×1020
原子/立方公分或更高(例如約4.5×1021
原子/立方公分至5×1021
原子/立方公分或更高)的砷濃度下,所沈積的磊晶膜並不單純是摻雜砷的鍺膜,而是該沈積膜是介於矽與鍺砷(例如,假立方相的Ge3
As4
)之間的合金。鍺砷合金會將矽原子驅逐出晶格結構而在矽晶格中產生穩定的空位,從而使矽晶格結構坍塌並進而在磊晶膜中形成區域性(zoned)的應力。由於應力會扭曲(例如,拉緊)該半導體晶格,且該扭曲作用進而影響該半導體的電荷傳輸性質,因此具有5×1021
原子/立方公分或更高之砷濃度的拉伸應力磊晶鍺層可改良電晶體效能。因此,該電晶體通道區域中的載子移動率升高。藉由控制成品元件中的應力大小,製造者可提高載子移動率及提升元件效能。
在磊晶製程期間,處理腔室內的溫度維持在約450°C至約800°C,例如約600°C至約750°C,例如約650°C至約725°C。處理腔室內的壓力維持在約1托耳或更高,例如約10托耳或更高,例如約150托耳至約600托耳。可思及到,當未採用低壓沈積腔室時,可使用高於約600托耳的壓力。反之,在低壓沈積腔室中進行典型的磊晶成長製程維持約10托耳至約100托耳的處理壓力及高於600°C的處理溫度。然而觀察到藉著提高壓力至約150托耳或更高(例如約300托耳或更高),可形成相較於較低壓之磊晶成長製程而言具有更高砷濃度(例如,約1×1021
原子/立方公分至約5×1022
原子/立方公分)的沈積磊晶膜。
應注意,本發明實施例中所述的概念亦可應用在其他可用於邏輯與記憶體應用中的材料上。某些實例可包括以合金形式形成的SiGeAs、GeP、SiGeP、SiGeB、Si:CP、GeSn、GeP、GeB或GeSnB。在任何情況下,該摻雜濃度可能超過該磊晶層的固溶體溶解度(solid solubility),例如高於5×1020
或約1%或2%的摻雜劑含量。
此外,儘管本發明中論述的是磊晶製程,但可思及其他製程(例如,As佈植製程)亦可用來形成具有拉伸應力的矽砷層或鍺砷層。在使用佈植製程的情況中,可在佈植製程之後,在約600°C或更高溫度(例如約950°C)下進行退火處理以穩定或修復因佈植製程在該晶格結構中所造成的任何損傷。可使用雷射退火製程、尖波退火(spike anneal)製程或快速熱退火製程來進行退火處理。該等雷射可為任意類型的雷射,例如氣體雷射、準分子雷射、固態雷射、光纖雷射、半導體雷射等等,該等雷射可加以配置而可發射單一波長或同時發射兩種或兩種以上波長。該雷射退火處理可在基板的指定區域上進行相對短的時間,例如大約1秒或更短。在一實施例中,該雷射退火處理可進行大約毫秒級的時間長度。毫秒級退火改良產量表現,同時能精準地控制在沈積磊晶層中的原子取代作用。毫秒級退火亦避免發生摻雜劑擴散或對沈積層的電阻及拉伸應變造成任何負面衝擊。
第3A圖為根據本發明另一實施例圖示形成磊晶層之方法的流程圖300。在方框302,將基板定位在處理腔室內。可參考以上方框102所論述的類似方式來調整一或多個反應器條件。
在方框304,將含矽氣體引入該處理腔室中。合適的含矽氣體可包括,但不限於,矽烷化合物、鹵化矽烷化合物或上述氣體之組合物。矽烷化合物可包括甲矽烷(SiH4
)及具有實驗式Six
H(2x+2)
的更高級矽烷,例如二矽烷(Si2
H6
)、三矽烷(Si3
H8
)及四矽烷(Si4
H10
)。鹵化矽烷化合物可包括單氯矽烷(MCS)、二氯矽烷(DCS)、三氯矽烷(TCS)、六氯二矽烷(HCDS)、八氯三矽烷(OCTS)、四氯化矽(STC)或上述氣體之任意組合物。在一實施例中,該含矽氣體為二矽烷。在另一實施例中,該矽源包括TCS。在又另一實施例中,該矽源包括TCS及DCS。在一使用二矽烷的實例中,可使二矽烷以約200 sccm至約1500 sccm(例如約500 sccm至約1000 sccm,例如約700 sccm至約850 sccm,例如約800 sccm)的流動速率流入該處理腔室中。
在方框306,將含砷氣體引入該處理腔室中。合適的含砷氣體可包括叔丁基胂(TBA)或胂(AsH3
)。在某些實施例中,可將含碳化合物引入該處理腔室中。例如,當使用AsH3
作為砷源時,該含碳化合物可用來在所沈積的磊晶層中添加碳。示例性的含碳化合物可包括,但不限於,單甲基矽烷(MMS)、四甲基矽烷(TMS)或有機金屬前驅物,例如三丁基砷(tributyl arsenide,TBA)。在一實施例中,可以約10 sccm至約200 sccm(例如約20 sccm至約100 sccm,例如約75 sccm至約85 sccm)的流動速率將TBA化合物引入該處理腔室中。
可思及方框304及方框306可能同時進行、實質同時進行或以任意期望的順序來進行。此外,儘管在本發明中論述的是含砷氣體,但可思及,任何由在矽中之擴散係數比磷原子在矽中之擴散係數要小的摻雜劑原子所構成的氣體皆可用來在矽晶格結構中引發應力。例如,可使用含銻氣體(例如,三乙基銻(TESb))來取代該含砷氣體,或除了含砷氣體之外亦可使用含銻氣體。
若有需要,可將一或多種摻雜劑氣體引入該處理腔室中以為該磊晶層提供期望的導電特性及各種電性特性,例如在電子元件所要求的受控制且期望之路徑中流動的方向性電子流。依據所期望之沈積磊晶層的導電特性而定,示例性的摻雜劑氣體可包括,但不限於,磷、硼、鎵或鋁。
在方框308,含矽氣體與含砷氣體的混合物進行熱反應以形成具有拉伸應力(tensile-stressed)的矽砷合金,且該矽砷合金具有大於4.5×1020
原子/立方公分或更高的砷濃度,例如4.5×1021
原子/立方公分至5×1021
原子/立方公分或更高且可接受的誤差在±3%以內。特別是,該矽砷合金含有來自於TESb的碳。在一實施例中,該矽砷合金具有約1×1017
原子/立方公分或更高(例如約1×1018
原子/立方公分至1×1020
原子/立方公分)的碳濃度。所沈積的矽砷合金可具有約250Å至約800Å(例如,約500Å)的厚度。
類似地,該矽源與該砷源可在處理腔室的反應區域中進行反應,而得以磊晶形成矽砷合金。並認為在約4.5×1020
原子/立方公分或更高(例如約4.5×1021
原子/立方公分至5×1021
原子/立方公分或更高)的砷濃度下,所沈積的磊晶膜並不純粹是摻雜砷的矽膜,而是該沈積膜是介於矽與矽砷(例如,假立方相的Si3
As4
)之間的合金。由於應力會扭曲(例如,拉緊)該半導體晶格,且該扭曲作用進而影響該半導體的電荷傳輸性質,因此具有5×1021
原子/立方公分或更高之砷濃度的拉伸應力磊晶矽層亦可改良電晶體效能。
在磊晶製程期間,處理腔室內的溫度維持在約400°C至約800°C,例如約600°C至約750°C,例如約625°C至約700°C。處理腔室內的壓力維持在約1托耳至約150托耳,例如約10托耳至約20托耳。在一實施例中,使用二矽烷及TBA在600°C的溫度及20托耳下形成拉伸應力磊晶矽層。依據所使用的矽源而定,可思及到,可使用高於約150托耳的壓力。此外,藉著提高壓力至約150托耳或更高(例如約300托耳或更高),可形成相較於較低壓之磊晶成長製程而言具有更高砷濃度(例如,約5×1021
原子/立方公分或更高)的沈積磊晶膜。
該矽砷合金可作為存在於半導體元件中之介於源極區域與汲極區域間之電晶體通道附近的擴散阻障層,該半導體元件可例如為金屬-氧化物-半導體場效電晶體(MOSFET)或鰭式場效電晶體(FinFET),在鰭式場效電晶體中,連接源極區域與汲極區域的通道為伸出基板的薄「鰭狀物(fin)」。此舉是因為所沈積之磊晶膜中的碳可在高溫(例如,高於800°C)操作期間防止或減慢磷(或其他摻雜劑)從源極/汲極區域擴散至該通道區域中。此摻雜劑擴散作用會導致產生漏電電流及擊穿效能(breakdown performance)不佳的不利情形。
第3B圖為FinFET結構358的剖面圖,該圖中概要圖示可能受益於本發明實施例的示例性結構。應注意,該結構358僅作為示例之用且未按比例繪製。因此,本發明實施例不應侷限於所圖示的結構358。在一實施例中,該結構358包括基板360、形成在該基板360上方的Si:P源極區域362及Si:P汲極區域364。(經摻雜或未經摻雜的)通道區域366配置在該Si:P源極區域362與Si:P汲極區域364之間。源汲極延伸(SDE)區域368為根據本發明實施例所形成之摻雜碳的矽砷合金,該源汲極延伸(SDE)區域368配置在該Si:P源極區域362與Si:P汲極區域364之間以作為P擴散阻障層。該源汲極延伸(SDE)區域368可配置在該通道區域的附近或緊鄰該通道區域的兩側(例如,位在該通道區域366的橫向外側處)。閘極370形成在該通道區域366的頂部上及周圍。間隔物372可環繞著該閘極370而形成且位在該SDE區域368的頂部上。
第4圖為根據本發明一實施例圖示形成高品質磷化鍺(GeP)磊晶材料之方法的流程圖400。在方框402,將基板定位在處理腔室內。可參考以上方框102所論述的類似方式來調整一或多個反應器條件。
文中使用的術語「基板」意欲廣泛涵蓋具有表面且在該表面上可沈積材料層的任何物件或材料。基板可包括塊狀材料,例如矽(例如,可能含有摻雜劑的單晶矽)或可包括覆蓋在該塊狀材料上方的一或多個層。該基板可為平面基板或已圖案化的基板。已圖案化基板為可能在基板之處理表面內或處理表面上形成有電子特徵結構的基板。該基板可包含單晶表面及/或非單晶的第二表面,例如多晶或非晶質的表面。單晶表面可包括通常由諸如矽、鍺、矽鍺或矽碳等材料所製成的裸晶基板或沈積單晶層。多晶或非晶質表面可包括介電材料(例如氧化物或氮化物,尤其是氧化矽或氮化矽)及非晶矽表面。
在方框404,將含鍺氣體引入該處理腔室中。合適的含鍺氣體可包括,但不限於,鍺烷(GeH4
)、二鍺烷(Ge2
H6
)、三鍺烷(Ge3
H8
)、氯化鍺烷氣體,例如四氯化鍺(GeCl4
)、二氯鍺烷(GeH2
Cl2
)、三氯鍺烷 (GeHCl3
)、六氯二鍺烷(Ge2
Cl6
)或上述任意兩種或兩種以上氣體的組合物。亦可使用任何合適的鹵化鍺化合物。在一示例性實施例中,可使用二鍺烷(Ge2
H6
)。由於二鍺烷在低溫下的反應性,因此發現二鍺烷有利於在極低溫磊晶形成Ge合金時有效地將Ge納入晶格中。因此,可在諸如400°C或更低(例如,350°C至400°C)的低溫下得到高成長速率。
在一使用二鍺烷(Ge2
H6
)的示例性實例中,二鍺烷可以以下的流動速率流入該處理腔室中:約5 sccm至約100 sccm,例如介於約10 sccm至約95 sccm間、例如約15 sccm至約25 sccm、例如約25 sccm至約35 sccm、例如約35 sccm至約45 sccm、例如約45 sccm至約55 sccm、例如約55 sccm至約65 sccm、例如約65 sccm至約75 sccm、例如約75 sccm至約85 sccm、例如約85 sccm至約95 sccm。在一實施例中,可使二鍺烷以約20 sccm之低速率流入處理腔室。亦可思及更高的流動速率。例如,可使二鍺烷以約300 sccm至約1500 sccm(例如約800 sccm)的流動速率流入該處理腔室中。
在方框406,將含磷氣體引入該處理腔室中。一示例性的含磷氣體為叔丁基膦(TBP)。令示例性含磷氣體包括膦(PH3
)。在一實施例中,可以以下的流動速率將TBP或膦引入該處理腔室中:約10 sccm至約200 sccm、例如介於約10 sccm至約20 sccm、約20 sccm至約30 sccm、約30 sccm至約40 sccm、約40 sccm至約50 sccm、約50 sccm至約60 sccm、約60 sccm至約70 sccm、約70 sccm至約80 sccm、約80 sccm至約90 sccm、約90 sccm至約100 sccm、約100 sccm至約110 sccm、約110 sccm至約120 sccm、約120 sccm至約130 sccm、約130 sccm至約140 sccm、約140 sccm至約150 sccm、約150 sccm至約160 sccm、約160 sccm至約170 sccm、約170 sccm至約180 sccm、約180 sccm至約190 sccm、約190 sccm至約200 sccm。
可思及方框404及方框406可同時進行、實質同時進行或以任意期望的順序來進行。此外,儘管在本發明中論述含磷氣體,但可思及,任何由在矽中之擴散係數比磷原子在矽中之擴散係數要小的摻雜劑原子所構成的氣體皆可用來在矽晶格結構中引發應力。例如,依據所沈積之磊晶層的期望性質及/或導電特性而定,可使用含砷氣體(例如,叔丁基胂(TBA)或胂(AsH3
))、含銻氣體(例如,三乙基銻(TESb))來取代該含磷氣體,或除了含磷氣體之外亦可使用含砷氣體、含銻氣體。
在方框408,含鍺氣體與含磷氣體的混合物進行熱反應以在基板上磊晶成長磷化鍺(GeP)合金或材料。
在磊晶製程期間,處理腔室內的溫度維持在約450°C或更低,例如約150°C至約400°C,例如約200°C至約250°C,例如約250°C至約300°C,例如約300°C至約350°C,例如約350°C至約400°C。在一實施例中,該磷化鍺合金是在約350°C的溫度下成長而成。處理腔室內的壓力維持在約1托耳至約150托耳,例如約10托耳至約100托耳,例如100托耳。可思及到,可使用高於約100托耳的壓力以獲得相較於較低壓之磊晶成長製程而言更高的磷濃度。
在一使用二鍺烷及膦(phosphine)的實施例中,該膦的分壓可在3托耳至約30托耳的範圍中。P與Ge的莫耳比例可介於約1:10至約1:40間,例如約1:20至約1:30間。觀察到在本案中所述參數下形成的GeP合金表現出高結晶品質且具有極高的P+
離子濃度。例如,觀察到在本案中所述參數下形成的GeP合金含有約7.5x1019
原子/立方公分或更高的高磷濃度,例如4.5x1020
原子/立方公分或更高的磷濃度,例如4.5x1021
原子/立方公分至5x1021
原子/立方公分的磷濃度,且可接受的誤差為±3%。所沈積的磷化鍺合金可具有約250Å至約800Å(例如約500Å)的厚度。
本發明的益處包括具有高於5x1020
原子/立方公分或更高之砷摻雜濃度而可改良電晶體效能的拉伸應力鍺砷層。重摻雜砷的鍺可在鍺或其他適用於邏輯與記憶體應用上的材料中引起顯著的拉伸應變。該提高的應力會扭曲或拉緊該半導體結晶晶格,且該扭曲作用進而影響該半導體的電荷傳輸性質。因此提高了載子移動率,且從而改良元件效能。在某些實施例中,重摻雜砷的矽可包含濃度為1x1017
原子/立方公分至1x1020
原子/立方公分或更高的碳,藉以防止磷(或其他摻雜劑)在高溫操作期間從源極/汲極區域擴散至通道區域中。從而可使在通道區域處所發生的漏電電流減至最小或避免發生漏電電流。
本發明的益處亦包括使用二鍺烷(Ge2
H6
)及膦(PH3
)以極低溫成長高品質的Ge:P。該磊晶製程是在約100托耳的降低壓力下使用範圍在3托耳至約30托耳間的膦分壓來進行以得到7.5x1019
原子/立方公分或更高的高磷濃度。該高磷濃度在所沈積的磊晶膜內引發應力,從而提高拉伸應變,而使得載子移動率提高及改良元件效能。
儘管以上內容描述了本發明的多個實施例,但在不偏離本發明基本範圍下,當可設計出本發明的其他及進一步的實施例。
100‧‧‧流程圖102‧‧‧方框104‧‧‧方框106‧‧‧方框108‧‧‧方框200‧‧‧結構202‧‧‧基板203‧‧‧矽表面204‧‧‧鍺砷合金300‧‧‧流程圖302‧‧‧方框304‧‧‧方框306‧‧‧方框308‧‧‧方框358‧‧‧FinFET結構360‧‧‧基板362‧‧‧Si:P源極區域364‧‧‧Si:P汲極區域366‧‧‧通道區域368‧‧‧源汲極延伸區域370‧‧‧閘極372‧‧‧間隔物400‧‧‧流程圖402‧‧‧方框404‧‧‧方框406‧‧‧方框408‧‧‧方框
本發明的實施例簡要概述如上且於以下做更詳細地論述,且可參照附圖中所圖示的說明性本發明實施例來瞭解本發明的實施例。然而應注意,該等附圖圖示的僅為本發明的典型實施例,故不應視為本發明範圍的限制,就本發明而言可容許做出其他等效實施例。
第1圖為根據本發明一實施例圖示形成磊晶層之方法的流程圖。
第2圖圖示根據第1圖之方法所製成的結構。
第3A圖為根據本發明另一實施例圖示形成磊晶層之方法的流程圖。
第3B圖為根據本發明實施例所製成之結構的剖面圖。
第4圖為根據本發明一實施例圖示形成高品質磷化鍺(GeP)磊晶層之方法的流程圖。
為幫助瞭解,儘可能地使用相同元件符號來代表該等圖式中共用的相同元件。該等圖式未按比例繪製且可能加以簡化以求清晰。預期可將一實施例中的元件及特徵有利地併入其他實施例中而無需多做說明。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
100‧‧‧流程圖
102‧‧‧方框
104‧‧‧方框
106‧‧‧方框
108‧‧‧方框
Claims (20)
- 一種用於形成一拉伸應力鍺砷層的方法,包括以下步驟:加熱放置在一處理腔室內的一基板,其中該基板包含矽;及使該基板的一表面暴露於一含鍺氣體及一含砷氣體以在該表面上形成一具有4.5×1020原子/立方公分或更高之砷濃度的鍺砷合金。
- 如請求項1所述之方法,其中該含鍺氣體包括鍺烷(GeH4)、二鍺烷(Ge2H6)、三鍺烷(Ge3H8)、四氯化鍺(GeCl4)、二氯鍺烷(GeH2Cl2)、三氯鍺烷(GeHCl3)、六氯二鍺烷(Ge2Cl6)或上述氣體之任意組合物。
- 如請求項1所述之方法,其中該含砷氣體包括胂(AsH3)或叔丁基胂(TBA)。
- 如請求項1所述之方法,其中該鍺砷合金具有一至少4.5x1021至5x1021原子/立方公分的砷濃度。
- 如請求項4所述之方法,其中使該基板的一表面暴露於一含鍺氣體及一含砷氣體的步驟包括以下步驟:使該處理腔室內的一溫度維持約450℃至約800℃。
- 如請求項1所述之方法,其中該處理腔室內的該壓力維持在約10托耳或更高。
- 一種處理一基板的方法,包括以下步驟:將一半導體基板定位在一處理腔室內,其中該基板包括一源極/汲極區域;使該基板暴露於一含矽氣體及一含砷氣體以形成一矽砷合金,其中該含砷氣體為一砷源及一碳源,該砷源及該碳源用於提供在該源極/汲極區域上4.5×1021原子/立方公分至5×1021原子/立方公分或更高的一砷濃度以及在該源極/汲極區域上約1×1017原子/立方公分或更高的一碳濃度;及在該矽砷合金上形成一電晶體通道區域。
- 如請求項7所述之方法,其中該含矽氣體包括甲矽烷(SiH4)、二矽烷(Si2H6)、三矽烷(Si3H8)、四矽烷(Si4H10)、單氯矽烷(MCS)、二氯矽烷(DCS)、三氯矽烷(TCS)、六氯二矽烷(HCDS)、八氯三矽烷(OCTS)、四氯化矽(STC)或上述氣體之任意組合物。
- 如請求項7所述之方法,其中該含砷氣體包括叔丁基胂(TBA)。
- 如請求項7所述之方法,其中該含矽氣體為二矽烷及該含砷氣體為TBA。
- 如請求項7所述之方法,其中該矽砷合金具有一1×1018原子/立方公分至1×1020原子/立方公分的碳濃度。
- 一種具有拉伸應力的矽砷合金的結構,包括:一基板,該基板包括一源極區域及一汲極區域;一通道區域,該通道區域配置在該源極區域極該汲極區域之間;一源汲極延伸區域,該源汲極延伸區域配置在該通道區域的橫向外側處,其中該源汲極延伸區域是一矽砷合金,該矽砷合金具有一4.5×1021原子/立方公分至5×1021原子/立方公分或更高之砷濃度及一約1×1017原子/立方公分或更高的碳濃度;及一閘極區域,該閘極區域配置在該通道區域上方。
- 如請求項12所述之結構,其中該矽砷合金具有一約1×1018原子/立方公分至1×1020原子/立方公分的碳濃度。
- 如請求項12所述之結構,其中該矽砷合金是使用一包括甲矽烷(SiH4)、二矽烷(Si2H6)、三矽烷(Si3H8)、四矽烷(Si4H10)、單氯矽烷(MCS)、二氯矽烷(DCS)、三氯矽烷(TCS)、六氯二矽烷(HCDS)、八氯三矽烷(OCTS)、四氯化矽(STC)或 上述氣體之任意組合物的含矽氣體及一包括叔丁基胂(TBA)或胂(AsH3)的含砷氣體藉由一磊晶製程所形成的。
- 如請求項14所述之結構,其中該矽砷合金是使用二矽烷與TBA藉由一磊晶製程所形成。
- 一種形成一磷化鍺層的方法,包括以下步驟:加熱放置在一處理腔室內的一矽基板,該處理腔室具有一約10托耳至約100托耳的腔室壓力;在約400℃或更低的一溫度下使該基板的一表面暴露於一含鍺氣體及一含磷氣體以在該表面上形成一具有一7.5x1019原子/立方公分或更高之磷濃度的磷化鍺合金,其中以一約3托耳至約30托耳的分壓將該含磷氣體引入該處理腔室中。
- 如請求項16所述之方法,其中該含鍺氣體包括鍺烷(GeH4)或二鍺烷(Ge2H6)。
- 如請求項16所述之方法,其中該含磷氣體包括膦(PH3)。
- 如請求項16所述之方法,其中使該基板的一表面暴露於一含鍺氣體及一含磷氣體的步驟是在一約350℃或更低的溫度下進行。
- 如請求項16所述之方法,其中該磷與鍺的 莫耳比例為介於約1:10至約1:40之間。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562259869P | 2015-11-25 | 2015-11-25 | |
US62/259,869 | 2015-11-25 | ||
US201662280594P | 2016-01-19 | 2016-01-19 | |
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TW201729241A (zh) | 2017-08-16 |
US20170148918A1 (en) | 2017-05-25 |
WO2017091345A1 (en) | 2017-06-01 |
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