TWI728816B - 發光二極體模組及其製作方法 - Google Patents

發光二極體模組及其製作方法 Download PDF

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TWI728816B
TWI728816B TW109116963A TW109116963A TWI728816B TW I728816 B TWI728816 B TW I728816B TW 109116963 A TW109116963 A TW 109116963A TW 109116963 A TW109116963 A TW 109116963A TW I728816 B TWI728816 B TW I728816B
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layer
conductive element
emitting diode
opening
diode module
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TW109116963A
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TW202145597A (zh
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張建財
虞晉瑞
黃正東
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健策精密工業股份有限公司
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Priority to TW109116963A priority Critical patent/TWI728816B/zh
Priority to CN202110209389.0A priority patent/CN113707789A/zh
Priority to US17/200,926 priority patent/US11705547B2/en
Priority to JP2021067502A priority patent/JP2021184458A/ja
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Publication of TWI728816B publication Critical patent/TWI728816B/zh
Publication of TW202145597A publication Critical patent/TW202145597A/zh
Priority to US18/346,871 priority patent/US20230343901A1/en

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Abstract

一種發光二極體模組，其包括第一導電元件、第二導電元件、絕緣結構以及第一電鍍層。第一導電元件包括第一金屬層以及第一保護層。第一保護層包覆於第一金屬層外。第二導電元件包括第二金屬層以及第二保護層。第二保護層包覆於第二金屬層外。絕緣結構包覆第一導電元件的四周以及第二導電元件的四周。絕緣結構包括一第一開口以及一第二開口。第一電鍍層配置於位於第一開口以及第二開口中的第一保護層以及第二保護層上。

Description

發光二極體模組及其製作方法
本發明有關於一種光學設備及其製作方法，特別有關於一種發光二極體模組及其製作方法。
發光二極體因具有體積小、高效能、壽命長、低能耗等優點，因此已經廣泛應用於不同領域。
在現有的發光二極體中，有利用四方平面無引腳 (Quad Flat No-leads, QFN)的方式封裝。藉由將電連接點向下延伸設置在封裝元件底面，進而達到高密度小體積封裝的優點。然而，如何提供可靠度更高的發光封裝元件，是領域技術人員所不斷發展的目的之一。
本發明實施例提供的發光二極體模組可以具有較高的可靠度。本發明實施例提供的發光二極體模組的製作方法可以製作出可靠度較高的發光二極體模組。
本發明實施例的發光二極體模組包括第一導電元件、第二導電元件、絕緣結構以及第一電鍍層。第一導電元件包括第一金屬層以及第一保護層。第一保護層包覆於第一金屬層外。第二導電元件包括第二金屬層以及第二保護層。第二保護層包覆於第二金屬層外。絕緣結構包覆第一導電元件的四周以及第二導電元件的四周。絕緣結構包括一第一開口以及一第二開口。第一電鍍層配置於位於第一開口以及第二開口中的第一保護層以及第二保護層上。
在本發明的一實施例中，上述的第一金屬層的材質以及第二金屬層的材質為銅。
在本發明的一實施例中，上述的第一保護層的材質以及第二保護層的材質為鎳。
在本發明的一實施例中，上述的第一電鍍層的材質為鈀。
在本發明的一實施例中，上述的發光二極體模組還包括一第二電鍍層。第二電鍍層配置於第一電鍍層上，且第二電鍍層的材質為金。
在本發明的一實施例中，上述的第一電鍍層的材質為銀。
在本發明的一實施例中，上述的第一導電元件具有一第一上表面以及一第一下表面，第二導電元件具有一第二上表面以及一第二下表面。絕緣結構覆蓋部分第一上表面以及部分第二上表面。第一電鍍層覆蓋剩餘第一上表面以及剩餘第二上表面。第一下表面以及第二下表面位於第二開口中。
本發明一實施例的發光二極體模組的製作方法包括：包覆一第一保護層於一第一金屬層外並形成一第一導電元件，且包覆一第二保護層於一第二金屬層外並形成一第二導電元件；以一絕緣結構包覆第一導電元件的四周以及第二導電元件的四周，且絕緣結構包括一第一開口以及一第二開口；以及配置一第一電鍍層於位於第一開口以及第二開口中的第一保護層以及第二保護層上。
在本發明的一實施例中，上述的發光二極體模組的製作方法包括：配置一第二電鍍層於第一電鍍層上。
在本發明的一實施例中，在配置上述的第一電鍍層之前還包括：表面處理絕緣結構以及第一開口和第二開口中的第一保護層和第二保護層。
由上述可知，本發明實施例的發光二極體模組可以藉由第一保護層保護第一金屬層，並藉由第二保護層保護第二金屬層，還可以藉由第一電鍍層提供良好的電性連接介面。本發明實施例的發光二極體模組的製作方法藉由在包覆絕緣結構之前形成第一保護層以及第二保護層，並在包覆絕緣結構之後形成第一電鍍層，以製作出具有較高可靠度的發光二極體模組。
本發明實施例提供的發光二極體模組可以應用在照明裝置、背光模組或顯示裝置，本發明並不限於此。本發明實施例提供的發光二極體模組的製作方法可以製作出可靠度較高的發光二極體模組，其可以應用在照明裝置、背光模組或顯示裝置，本發明並不限於此。
第1圖以及第2圖是本發明一實施例中發光二極體模組的立體示意圖，其中第1圖是朝向絕緣結構的第一開口繪示，第2圖是朝向絕緣結構的第二開口繪示。請參照第1圖，發光二極體模組100包括第一導電元件110、第二導電元件120、絕緣結構130 以及第一電鍍層140。
具體而言，絕緣結構130包括第一開口131，且第一電鍍層140配置於第一開口131中的第一導電元件110以及第二導電元件120上。需要特別說明的是，在第1圖以及第2圖中，第一導電元件110以及第二導電元件120被第一電鍍層140覆蓋，以下將會再以剖面示意圖詳細說明。
請參照第2圖，絕緣結構130還包括第二開口132，且第一電鍍層140配置於第二開口132中的第一導電元件110以及第二導電元件120上。
第3圖是根據第1圖的割面線3所繪示的剖面示意圖。請參照第3圖，第一導電元件110包括第一金屬層111以及第一保護層112。第一保護層112包覆於第一金屬層111外。第二導電元件120包括第二金屬層121以及第二保護層122。第二保護層122包覆於第二金屬層121外。
絕緣結構130包覆第一導電元件110的四周以及第二導電元件120的四周。第一電鍍層140配置於位於第一開口131以及第二開口132中的第一保護層112以及第二保護層122上。換句話說，在本實施例中，絕緣結構130直接連接部分第一保護層112以及部分第二保護層122。
具體而言，絕緣結構130還可以具有隔離條133，且隔離條133配置於第一導電元件110以及第二導電元件120之間。換句話說，第一導電元件110朝向第二導電元件120的邊緣113可以由隔離條133包覆，而第二導電元件120朝向第一導電元件110的邊緣123也可以由隔離條133包覆。
絕緣結構130還可以具有環狀杯134，且隔離條133連接環狀杯134。第一導電元件110的剩餘邊緣114和第二導電元件120的剩餘邊緣124可以由絕緣結構130的環狀杯134包覆。
進一步而言，第一導電元件110具有一第一上表面115以及一第一下表面116，第二導電元件120具有一第二上表面125以及一第二下表面126。
絕緣結構130覆蓋部分第一上表面115以及部分第二上表面125，且絕緣結構130覆蓋的區域沒有第一電鍍層140。第一電鍍層140覆蓋剩餘第一上表面115以及剩餘第二上表面125。第一下表面116以及第二下表面126位於第二開口132中。
另一方面，第一上表面115和第二上表面125共平面。因此，第一電鍍層140配置於第一上表面115以及第二上表面125上，並形成一個適於供發光二極體晶片150配置並電性連接的表面。
具體而言，第一金屬層111的材質以及第二金屬層121的材質為銅，第一保護層112的材質以及第二保護層122的材質為鎳，但本發明不限於此。在本發明的其他實施例中，第一金屬層111的材質以及第二金屬層121的材質可以為其他導電材質。
因此，在本實施例中，包覆於第一金屬層111之外的第一保護層112可以避免第一金屬層111產生置換反應，進而影響產品的信賴性，並提升發光二極體晶片150的電性連接品質的可靠度。舉例而言，本實施例的第一金屬層111的材質以及第二金屬層121的材質為銅，第一保護層112以及第二保護層122可以各自保護第一金屬層111和第二金屬層121並避免銅置換，進而影響產品信賴性功能。
另一方面，第一電鍍層140的材質為銀。因此，第一電鍍層140可以進一步提升電性連接的品質。
第4圖是本發明另一實施例中發光二極體模組的剖面示意圖。請參照第4圖，在本發明的其他實施例中，發光二極體模組100A類似於上述實施例的發光二極體模組100，其包括第一導電元件110、第二導電元件120、絕緣結構130以及第一電鍍層140。
在本實施例中，發光二極體模組100A還包括第二電鍍層160。第二電鍍層160配置於第一電鍍層140上。具體而言，本實施例的第二電鍍層160只配置於第一電鍍層140之上。
舉例而言，第一電鍍層140的材質為鈀，而第二電鍍層160的材質為金。因此，第一電鍍層140和第二電鍍層160可以共同形成一個適於電性連接發光二極體晶片150的導電結構，但本發明不限於此。在本發明的其他實施例中，第一電鍍層140的材質和第二電鍍層160的材質還可以為其他導電材質。
第5圖至第7圖是本發明一實施例中製作發光二極體模組的流程的剖面示意圖。請參照第5圖，根據本實施例中發光二極體模組的製作方法，第一保護層112係包覆於第一金屬層111外以共同形成第一導電元件110，且第二保護層122係包覆於第二金屬層121外以共同形成第二導電元件120。
具體而言，第一導電元件110的第一上表面115和第二導電元件120的第二上表面125共平面。第一導電元件110的第一下表面116和第二導電元件120的第二下表面126共平面。
請參照第6圖，根據本實施例的製作方法，第一導電元件110的四周以及第二導電元件120的四周係以絕緣結構130包覆，且絕緣結構130包括第一開口131以及第二開口132。
請參照第7圖，根據本實施例的製作方法，第一電鍍層140係配置於位於第一開口131以及第二開口132中的第一保護層112以及第二保護層122上。
因此，本實施例的第一電鍍層140僅配置於絕緣結構130所暴露的第一保護層112以及第二保護層122。換句話說，第一導電元件110的四周個別被絕緣結構130以及第一電鍍層140覆蓋，且絕緣結構130和第一電鍍層140在第一導電元件110上的分布區域彼此不重疊。第二導電元件120的四周個別被絕緣結構130以及第一電鍍層140覆蓋，且絕緣結構130和第一電鍍層140在第二導電元件120上的分布區域彼此不重疊。藉由上述步驟，本實施例的製作方法可以進一步配置發光二極體晶片150（請參照第3圖）在第二導電元件120上以形成上述發光二極體模組100（請參照第3圖）。
另一方面，本實施例的絕緣結構130是以壓模的方式製作而成，進而暴露部分第一保護層112以及第二保護層122。在其他實施例中的製作方法在配置第一電鍍層140之前還可以進一步對絕緣結構130以及絕緣結構130所暴露的第一保護層112以及第二保護層122作表面處理。詳細而言，表面處理絕緣結構130，並表面處理絕緣結構130的第一開口131以及第二開口132中的第一保護層112以及第二保護層122，進而去除絕緣結構130在壓模製程過後產生的毛邊以及第一保護層112和第二保護層122上的金屬氧化層。
第8圖是本發明另一實施例中製作發光二極體模組的流程中的剖面示意圖。請參照第8圖，在本發明的另依實施例中，根據發光二極體模組的製作方法，可以進一步配置一第二電鍍層160於第一電鍍層140上。藉由上述步驟，本實施例的製作方法可以進一步配置發光二極體晶片在第二導電元件120上以形成上述發光二極體模組100A（請參照第4圖）。
綜上所述，本發明實施例的發光二極體模組可以藉由第一保護層保護第一金屬層，並藉由第二保護層保護第二金屬層，且第一電鍍層配置於絕緣結構所暴露第一導電元件以及第二導電元件，以提供良好的電性連接介面。本發明實施例的發光二極體模組的製作方法藉由在包覆絕緣結構之前形成第一保護層以及第二保護層，並在包覆絕緣結構之後形成第一電鍍層，以製作出具有較高可靠度的發光二極體模組。
3:割面線 100:發光二極體模組 100A:發光二極體模組 110:第一導電元件 111:第一金屬層 112:第一保護層 113:邊緣 114:邊緣 115:第一上表面 116:第一下表面 120:第二導電元件 121:第二金屬層 122:第二保護層 123:邊緣 124:邊緣 125:第二上表面 126:第二下表面 130:絕緣結構 131:第一開口 132:第二開口 133:隔離條 134:環狀杯 140:第一電鍍層 150:發光二極體晶片 160:第二電鍍層
第1圖以及第2圖是本發明一實施例中發光二極體模組的立體示意圖； 第3圖是根據第1圖的割面線3所繪示的剖面示意圖； 第4圖是本發明另一實施例中發光二極體模組的剖面示意圖； 第5圖至第7圖是本發明一實施例中製作發光二極體模組的流程的剖面示意圖；以及 第8圖是本發明另依實施例中製作發光二極體模組的流程的剖面示意圖。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
100:發光二極體模組
110:第一導電元件
111:第一金屬層
112:第一保護層
113:邊緣
114:邊緣
115:第一上表面
116:第一下表面
120:第二導電元件
121:第二金屬層
122:第二保護層
123:邊緣
124:邊緣
125:第二上表面
126:第二下表面
130:絕緣結構
131:第一開口
132:第二開口
133:隔離條
134:環狀杯
140:第一電鍍層
150:發光二極體晶片

Claims (9)

  1. 一種發光二極體模組，包括：一第一導電元件，包括：一第一金屬層；以及一第一保護層，包覆於所述第一金屬層外；一第二導電元件，包括：一第二金屬層；以及一第二保護層，包覆於所述第二金屬層外；一絕緣結構，包覆所述第一導電元件的四周以及所述第二導電元件的四周，所述絕緣結構包括一第一開口以及一第二開口；以及一第一電鍍層，配置於位於所述第一開口以及所述第二開口中的所述第一保護層以及所述第二保護層上；其中，所述第一導電元件具有一第一上表面以及一第一下表面，所述第二導電元件具有一第二上表面以及一第二下表面，所述絕緣結構覆蓋部分所述第一上表面以及部分所述第二上表面，所述第一電鍍層覆蓋剩餘所述第一上表面以及剩餘所述第二上表面，且所述第一下表面以及所述第二下表面位於所述第二開口中。
  2. 如請求項1所述之發光二極體模組，其中所述第一金屬層的材質以及所述第二金屬層的材質為銅。
  3. 如請求項1所述之發光二極體模組，其中所 述第一保護層的材質以及所述第二保護層的材質為鎳。
  4. 如請求項1所述之發光二極體模組，其中所述第一電鍍層的材質為鈀。
  5. 如請求項4所述之發光二極體模組，還包括一第二電鍍層，其配置於所述第一電鍍層上，且所述第二電鍍層的材質為金。
  6. 如請求項1所述之發光二極體模組，其中所述第一電鍍層的材質為銀。
  7. 一種發光二極體模組的製作方法，包括：包覆一第一保護層於一第一金屬層外並形成一第一導電元件，且包覆一第二保護層於一第二金屬層外並形成一第二導電元件；以一絕緣結構包覆所述第一導電元件的四周以及所述第二導電元件的四周，且所述絕緣結構包括一第一開口以及一第二開口；以及配置一第一電鍍層於位於所述第一開口以及所述第二開口中的所述第一保護層以及所述第二保護層上。
  8. 如請求項7所述之發光二極體模組的製作方法，包括： 配置一第二電鍍層於所述第一電鍍層上。
  9. 如請求項7所述之發光二極體模組的製作方法，其中在配置所述第一電鍍層之前還包括：表面處理所述絕緣結構以及所述第一開口和所述第二開口中的所述第一保護層和所述第二保護層。
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