TWI725137B - 脆性材料基板之雷射加工方法及雷射加工裝置 - Google Patents

脆性材料基板之雷射加工方法及雷射加工裝置 Download PDF

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Publication number
TWI725137B
TWI725137B TW106108874A TW106108874A TWI725137B TW I725137 B TWI725137 B TW I725137B TW 106108874 A TW106108874 A TW 106108874A TW 106108874 A TW106108874 A TW 106108874A TW I725137 B TWI725137 B TW I725137B
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TW
Taiwan
Prior art keywords
laser beam
laser
brittle material
material substrate
processing
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Application number
TW106108874A
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English (en)
Chinese (zh)
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TW201803677A (zh
Inventor
國生智史
前田憲一
Original Assignee
日商三星鑽石工業股份有限公司
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Publication of TW201803677A publication Critical patent/TW201803677A/zh
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Publication of TWI725137B publication Critical patent/TWI725137B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B23K26/048—Automatically focusing the laser beam by controlling the distance between laser head and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/0007—Applications not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1052—Formation of thin functional dielectric layers
    • H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
TW106108874A 2016-07-29 2017-03-17 脆性材料基板之雷射加工方法及雷射加工裝置 TWI725137B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016149303A JP6813168B2 (ja) 2016-07-29 2016-07-29 脆性材料基板のレーザー加工方法およびレーザー加工装置
JP??2016-149303 2016-07-29

Publications (2)

Publication Number Publication Date
TW201803677A TW201803677A (zh) 2018-02-01
TWI725137B true TWI725137B (zh) 2021-04-21

Family

ID=61079035

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106108874A TWI725137B (zh) 2016-07-29 2017-03-17 脆性材料基板之雷射加工方法及雷射加工裝置

Country Status (4)

Country Link
JP (1) JP6813168B2 (ja)
KR (1) KR102353478B1 (ja)
CN (1) CN107662055B (ja)
TW (1) TWI725137B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI816897B (zh) 2018-10-08 2023-10-01 美商伊雷克托科學工業股份有限公司 用於在基板中形成穿孔的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5686692A (en) * 1979-12-14 1981-07-14 Mitsubishi Heavy Ind Ltd Punching working method by means of laser
JP2001274557A (ja) * 2000-03-27 2001-10-05 Victor Co Of Japan Ltd プリント基板の製造方法
JP2003181668A (ja) * 2001-11-30 2003-07-02 Matsushita Electric Ind Co Ltd ピコ秒レーザ微細加工装置、ビーム光強度制御装置、レーザフライス加工方法、ビーム光強度分布制御方法、マイクロフィルタ設計方法、反射角補正方法、ヒステリシス効果補正方法、及び走査ミラー操作方法
JP2007038287A (ja) * 2005-08-05 2007-02-15 Sumitomo Heavy Ind Ltd レーザ加工方法及びレーザ加工装置
JP5686692B2 (ja) 2011-07-26 2015-03-18 愛三工業株式会社 樹脂製インテークマニホールド

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223766A (ja) * 1999-02-04 2000-08-11 Seiko Epson Corp レーザー加工装置およびレーザー加工方法
DE10207288B4 (de) * 2002-02-21 2005-05-04 Newson Engineering Nv Verfahren zum Bohren von Löchern mittels eines Laserstrahls in einem Substrat, insbesondere in einem elektrischen Schaltungsubstrat
JP2010024064A (ja) * 2008-07-15 2010-02-04 Seiko Epson Corp 構造体の製造方法、液滴吐出ヘッド
JP5667347B2 (ja) * 2009-06-30 2015-02-12 三星ダイヤモンド工業株式会社 レーザ光によるガラス基板加工装置
KR101131444B1 (ko) * 2010-05-10 2012-03-29 앰코 테크놀로지 코리아 주식회사 반도체 패키지 제조를 위한 레이저 드릴링 방법
JP2012071325A (ja) * 2010-09-28 2012-04-12 Seiko Epson Corp 基板の加工方法
KR101267220B1 (ko) * 2011-10-06 2013-05-24 주식회사 엘티에스 레이저를 이용한 마스크 제조방법
KR20130043276A (ko) * 2011-10-20 2013-04-30 주식회사 고려반도체시스템 동심원 가공 방식을 사용한 반도체 패키지의 레이저 가공 방법
JP2013146780A (ja) 2012-01-23 2013-08-01 Mitsuboshi Diamond Industrial Co Ltd 脆性材料基板のレーザ加工方法
JP2014231071A (ja) * 2013-05-29 2014-12-11 三星ダイヤモンド工業株式会社 レーザ光による基板切断装置
CN105669014B (zh) * 2014-11-21 2018-12-28 大族激光科技产业集团股份有限公司 一种采用激光刻划玻璃加工方法
CN104759764B (zh) * 2015-03-28 2018-02-02 大族激光科技产业集团股份有限公司 一种玻璃的激光钻孔方法
CN105025669B (zh) * 2015-07-28 2018-08-10 维嘉数控科技（苏州）有限公司 Uv激光钻孔的方法及具有盲孔的印刷电路板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5686692A (en) * 1979-12-14 1981-07-14 Mitsubishi Heavy Ind Ltd Punching working method by means of laser
JP2001274557A (ja) * 2000-03-27 2001-10-05 Victor Co Of Japan Ltd プリント基板の製造方法
JP2003181668A (ja) * 2001-11-30 2003-07-02 Matsushita Electric Ind Co Ltd ピコ秒レーザ微細加工装置、ビーム光強度制御装置、レーザフライス加工方法、ビーム光強度分布制御方法、マイクロフィルタ設計方法、反射角補正方法、ヒステリシス効果補正方法、及び走査ミラー操作方法
JP2007038287A (ja) * 2005-08-05 2007-02-15 Sumitomo Heavy Ind Ltd レーザ加工方法及びレーザ加工装置
JP5686692B2 (ja) 2011-07-26 2015-03-18 愛三工業株式会社 樹脂製インテークマニホールド

Also Published As

Publication number Publication date
JP6813168B2 (ja) 2021-01-13
CN107662055B (zh) 2021-04-13
CN107662055A (zh) 2018-02-06
KR102353478B1 (ko) 2022-01-21
TW201803677A (zh) 2018-02-01
JP2018015795A (ja) 2018-02-01
KR20180013679A (ko) 2018-02-07

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