TWI711125B - 指紋感測器及製造其之方法 - Google Patents

指紋感測器及製造其之方法 Download PDF

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TWI711125B
TWI711125B TW105114694A TW105114694A TWI711125B TW I711125 B TWI711125 B TW I711125B TW 105114694 A TW105114694 A TW 105114694A TW 105114694 A TW105114694 A TW 105114694A TW I711125 B TWI711125 B TW I711125B
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Taiwan
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die
substrate
top surface
conductive
semiconductor die
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TW105114694A
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TW201644013A (zh
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朴孫杉
鄭季洋
克里斯托佛 貝瑞
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美商艾馬克科技公司
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Abstract

一種指紋感測器裝置和一種製作指紋感測器裝置的方法。作為非限制性範例，本發明的各種方面提供各種指紋感測器裝置及其製造方法，所述指紋感測器裝置包括在晶粒的底面上的感測區域，其不具有從頂面感測指紋的頂面電極，和/或所述指紋感測器裝置包括直接電連接到板(通過所述板感測指紋)的導電元件的感測器晶粒。

Description

指紋感測器及製造其之方法
本發明關於一種指紋感測器及製造其之方法。
相關申請/以引用的方式併入的申請的交叉引用
本申請引用、主張2015年5月12日在韓國智慧財產權局遞交的且標題為“指紋感測器封裝及其製造方法(PACKAGE OF FINGERPRINT SENSOR AND FABRICATING METHOD THEREOF)”的第10-2015-0065900號韓國專利申請的優先權並主張所述韓國專利申請的權益，所述韓國專利申請的內容在此以全文引入的方式併入本文中。
目前用於形成感測器裝置(例如，指紋感測器裝置)的半導體封裝和方法並不適當，例如，會導致感測準確性和/或裝置可靠性不足、裝置比需要的更厚、裝置難以整合到其它產品和/或整合到其它產品中的成本高…等等。通過比較一般和傳統方法與如在本申請的其餘部分中參考圖式闡述的本發明，所屬領域的技術人員將顯而易見此類方法的另外的限制和缺點。
本發明的各種方面提供一種指紋感測器裝置和一種製作指紋感測器裝置的方法。作為非限制性範例，本發明的各種方面提供各種指 紋感測器裝置及其製造方法，所述指紋感測器裝置包括在晶粒的底面上的感測區域，其不具有從頂面感測指紋的頂面電極，和/或所述指紋感測器裝置包括直接電連接到板(通過所述板感測指紋)的導電元件的感測器晶粒。
100‧‧‧指紋感測器封裝
110‧‧‧半導體晶粒
110a‧‧‧第一面
110b‧‧‧第二面
110c‧‧‧周邊面
111‧‧‧導電互連結構
112‧‧‧指紋感測單元
120‧‧‧基板
120a‧‧‧頂面
120b‧‧‧底面
121‧‧‧導電跡線/圖案
122‧‧‧導電通孔
130‧‧‧黏合層
140‧‧‧防護板
140a‧‧‧頂面
140b‧‧‧底面
150‧‧‧邊框
151‧‧‧主體部分
152‧‧‧貼附部分
153‧‧‧基底部分
200‧‧‧指紋感測器裝置(或封裝)
200A-200D‧‧‧範例實施方案
230‧‧‧囊封材料
230a‧‧‧表面或頂面
240‧‧‧防護層
330‧‧‧囊封材料
330a‧‧‧第一表面
330b‧‧‧第二表面
331‧‧‧通孔
350‧‧‧導電層
350a‧‧‧導電通孔部分
350b‧‧‧導電焊盤部分
360‧‧‧導電互連結構
400‧‧‧指紋感測器裝置
400A‧‧‧範例實施方案
400B‧‧‧範例實施方案
440‧‧‧防護板
440a‧‧‧第一面
440b‧‧‧第二面
441‧‧‧導電互連結構
442‧‧‧導電層
500‧‧‧指紋感測器裝置
560‧‧‧插入件
560a‧‧‧第一面
560b‧‧‧第二面
561‧‧‧導電互連結構
562‧‧‧導電層
600‧‧‧指紋感測器裝置
600A-600E‧‧‧範例實施方案
610‧‧‧半導體晶粒
610a‧‧‧正面
610b‧‧‧背面
611‧‧‧導電互連結構
612‧‧‧感測單元
630‧‧‧黏合層
700‧‧‧範例實施方案
800‧‧‧範例實施方案
900‧‧‧範例實施方案
1000‧‧‧範例方法
1005-1095‧‧‧方塊
3000‧‧‧範例方法
3005-3095‧‧‧方塊
5000‧‧‧範例方法
5005-5095‧‧‧方塊
圖1示出根據本發明的各種方面的製作感測器裝置的範例方法的流程圖。
圖2A-2E示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。
圖3示出根據本發明的各種方面的製作感測器裝置的範例方法的流程圖。
圖4A-4B示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。
圖5示出根據本發明的各種方面的製作感測器裝置的範例方法的流程圖。
圖6A-6E示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。
圖7示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。
圖8示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。
圖9示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。
以下論述通過提供範例來呈現本發明的各種方面。此類範例是非限制性的，並且由此本發明的各種方面的範圍應不必受所提供的範例的任何特定特徵限制。在以下論述中，短語“例如”和“示例性”是非限制性的且通常與“借助於範例而非限制”“例如且不加限制”等等同義。
如本文中所使用，“和/或”意指通過“和/或”聯結的列表中的專案中的任何一個或多個。作為一範例，“x和/或y”意指三元素集合{(x),(y),(x,y)}中的任何元素。換句話說，“x和/或y”意指“x和y中的一個或兩個”。作為另一範例，“x、y和/或z”意指七元素集合{(x),(y),(z),(x,y),(x,z),(y,z),(x,y,z)}中的任何元素。換句話說，“x、y和/或z”意指“x、y和z中的一個或多個”。
本文中所使用的術語僅出於描述特定範例的目的，且並不意圖限制本發明。如本文中所使用，除非上下文另外明確指示，否則單數形式也意圖包含複數形式。將進一步理解，術語“包括”、“包含”、“具有”等等當在本說明書中使用時，表示所陳述特徵、整體、步驟、操作、元件和/或元件的存在，但是不排除一個或多個其它特徵、整體、步驟、操作、元件、元件和/或其群組的存在或添加。
將理解，雖然術語“第一”、“第二”等可在本文中用於描述各種元件，但這些元件不應受這些術語限制。這些術語僅用於將一個元件與另一元件區分開來。因此，例如，在不脫離本發明的教示內容的情況下，下文論述的第一元件、第一元件或第一部分可被稱為第二元件、第二元件或第二部分。類似地，各種空間術語，例如“上部”、“下部”、“側 部”等等，可以用於以相對方式將一個元件與另一元件區分開來。然而，應理解，元件可以不同方式定向，例如，在不脫離本發明的教示內容的情況下，半導體裝置可以側向轉動使得其“頂”表面水準地朝向且其“側”表面垂直地朝向。
在圖式中，為了清楚起見可以放大層、區和/或元件的厚度或大小。因此，本發明的範圍應不受此類厚度或大小限制。另外，在圖式中，類似參考標號可以在整個論述中指代類似元件。
此外，應理解，當元件A被提及為“連接到”或“耦合到”元件B時，元件A可以直接連接到元件B或間接連接到元件B(例如，插入元件C(和/或其它元件)可以定位在元件A與元件B之間)。
應理解，儘管本文中呈現的範例主要涉及指紋感測器及其製造方法，但是本發明的範圍不限於此。例如，本發明的各種方面容易適用於其它形式的感測器(例如，血管感測器、溫度感測器、濕度感測器、圖像感測器、通用生物識別感測器、眼或視網膜感測器、聲音感測器、材料檢測器等)。
另外，應理解，本文中呈現的範例不限於任何特定類型的指紋感測(例如，光學感測類型、半導體感測類型等)。在涉及半導體感測類型的指紋感測器的範例情境中，本文中呈現的各種範例不限於任何特定類型的此類感測(例如，利用溫度和/或壓力感測器，利用電容感測器等)。此外，應理解，本文中呈現的範例可以適用於其中同時感測整個指紋的所謂單次感測裝置或技術、和/或其中連續地(或依序地)感測(例如，當滑移手指時等)局部經掃描的指紋的所謂連續感測裝置或技術。
本發明的各種方面提供一種指紋感測器裝置(或封裝)，在其中第一導電凸塊和指紋感測單元(或區域)處於半導體晶粒的一個表面上且手指(或其指紋)接近半導體晶粒的另一表面上的防護層(例如，防護板、防護塗層等)的配置中，所述指紋感測器裝置(或封裝)可以基於電容的改變而感測指紋。
本發明的各種方面還提供一種指紋感測器裝置(或封裝)架構，所述指紋感測器裝置(或封裝)架構可以例如通過將具有指紋感測單元(或區域)的半導體晶粒以倒裝晶片配置安裝在基板上(例如，安裝到封裝基板、安裝到通過其可以感測指紋的板或層等)而簡化指紋感測器裝置的製造(或建造)過程。
本發明的各種方面另外提供一種指紋感測器裝置(或封裝)及其製造方法，所述指紋感測器裝置(或封裝)包含：基板(例如，長方形的、板形的等)，所述基板具有第一表面和與第一表面相對的第二表面；半導體晶粒，所述半導體晶粒具有平面的第一晶粒表面和與第一晶粒表面相對的第二晶粒表面，並且包含電連接到基板的多個第一導電凸塊和在第二晶粒表面上的指紋感測單元(或區域)；在第一晶粒表面上的防護板；以及將防護板附著(或保持、或耦合)到基板的邊框。
本發明的各種方面進一步提供一種指紋感測器裝置(或封裝)及其製造方法，所述指紋感測器裝置(或封裝)包含：基板(例如，長方形的、板形的等)，所述基板具有第一表面和與第一表面相對的第二表面；半導體晶粒，所述半導體晶粒具有平面的第一晶粒表面和與第一晶粒表面相對的第二晶粒表面，並且包含電連接到基板的多個第一導電凸塊和 在第二晶粒表面上的指紋感測單元(或區域)；圍繞半導體晶粒的側部的囊封材料；以及包覆在半導體晶粒的第一表面上的防護層。
本發明的各種方面又進一步提供一種指紋感測器裝置(或封裝)及其製造方法，所述指紋感測器裝置(或封裝)包含：基板，所述基板具有平面的第一表面和與第一表面相對的第二表面；半導體晶粒，所述半導體晶粒具有平面的第一晶粒表面和與第一晶粒表面相對的第二晶粒表面，並且包含電連接到基板的第二表面的多個第一導電凸塊和在第二晶粒表面上的指紋感測單元(或區域)；圍繞基板的第一表面以及半導體晶粒的側部和第一晶粒表面的囊封材料；以及包覆在基板的第二表面上(或跨基板的第二表面包覆)的防護層。
本發明的各種方面提供一種指紋感測器裝置(或封裝)，所述指紋感測器裝置(或封裝)包含：半導體晶粒，所述半導體晶粒具有平面的第一晶粒表面和與第一晶粒表面相對的第二晶粒表面並且在第一晶粒表面上包含多個第一導電凸塊和指紋感測單元(或區域)；防護板，所述防護板電連接到第一晶粒表面上的多個第一導電凸塊並且在防護板上包含多個第二導電凸塊；基板(例如，長方形的、板形的等)，所述基板使第二晶粒表面安裝在其第一基板表面上並且使第一基板表面電連接到多個第二導電凸塊；以及將防護板附著到基板的邊框。
本發明的各種方面還提供一種指紋感測器裝置(或封裝)或其製造方法，所述指紋感測器裝置(或封裝)包含：基板，所述基板具有基板頂面、基板底面以及在基板頂面與基板底面之間的基板側面；半導體晶粒，所述半導體晶粒具有晶粒頂面、晶粒底面以及在晶粒頂面與晶粒底 面之間的晶粒側面，其中晶粒底面包括感測區域，感測區域包括指紋感測電路；多個第一互連結構，所述多個第一互連結構將晶粒底面電連接到基板頂面；以及在晶粒頂面上的防護板，通過所述防護板感測指紋，所述防護板具有板頂面、板底面以及在板頂面與板底面之間的板側面。
範例指紋感測器裝置(或封裝)還可以(例如)包含耦合到基板頂面並耦合到板的邊框。感測區域可以(例如)在晶粒底面的中心區域中，並且多個第一互連結構可以定位在感測區域之外。範例指紋感測器裝置可以(例如)包含黏附到晶粒頂面並黏附到板底面的黏合層。黏合層可以(例如)完全覆蓋晶粒頂面。範例指紋感測器裝置可以(例如)在晶粒頂面上不包含電導體(例如，感測跡線或元件或電極等)。範例指紋感測器裝置可以(例如)包含多個第二互連結構，所述多個第二互連結構耦合到板底面並耦合到半導體晶粒的覆蓋面積之外的基板頂面，並且其中防護板包含多個導電跡線，多個導電跡線中的每一個電連接到第二互連結構中的相應一個。防護板可以(例如)是或包含玻璃。範例指紋感測器裝置可以(例如)包含在晶粒頂面與防護板之間的插入件。多個第二互連結構可以(例如)耦合到插入件的底面並耦合到半導體晶粒的覆蓋面積之外的基板頂面，並且插入件可以包括多個導電跡線，多個導電跡線中的每一個電連接到第二互連結構中的相應一個。
本發明的各種方面可以另外提供一種指紋感測器裝置(或封裝)或其製造方法，所述指紋感測器裝置(或封裝)包含：基板，所述基板具有基板頂面、基板底面以及在基板頂面與基板底面之間的基板側面；半導體晶粒，所述半導體晶粒具有晶粒頂面、晶粒底面以及在晶粒頂面與 晶粒底面之間的晶粒側面，其中晶粒底面包括感測區域，感測區域包括指紋感測電路；多個第一互連結構，所述多個第一互連結構將晶粒底面電連接到基板頂面；圍繞晶粒側面的囊封材料；以及在晶粒頂面上的防護層，通過所述防護層感測指紋，所述防護層具有防護層頂面、防護層底面以及在防護層頂面與防護層底面之間的防護層側面。
囊封材料可以(例如)具有與晶粒頂面共面的頂面。防護層可以(例如)包括塗層。防護層可以(例如)完全覆蓋晶粒頂面。防護層可以(例如)覆蓋囊封材料的頂面的至少一部分。
本發明的各種方面可以進一步提供一種指紋感測器裝置(或封裝)或其製造方法，所述指紋感測器裝置(或封裝)包含：基板，所述基板具有基板頂面、基板底面以及在基板頂面與基板底面之間的基板側面；板，通過所述板感測指紋，所述板具有板頂面、板底面以及在板頂面與板底面之間的板側面；半導體晶粒，所述半導體晶粒具有晶粒頂面、晶粒底面以及在晶粒頂面與晶粒底面之間的晶粒側面，其中晶粒頂面包含感測區域，感測區域包括指紋感測電路；以及多個第一導電互連結構，所述多個第一導電互連結構將晶粒頂面電連接到板底面。
板可以(例如)包括多個導電跡線，多個導電跡線中的每一個耦合到第一導電互連結構中的相應一個。在範例實施方案中，多個導電跡線可以嵌入板內。範例指紋感測器裝置可以(例如)包含多個第二導電互連結構，所述多個第二導電互連結構中的每一個耦合到板的導電跡線中的相應一個並耦合到基板頂面。範例指紋感測器裝置還可以(例如)包含將晶粒底面黏附到基板頂面的黏合層。
本發明的以上和其它方面將在各種範例實施方案的以下描述中進行描述並從各種範例實施方案的以下描述中顯而易見。現將參考附圖呈現本發明的各種方面。
應注意，儘管一般在形成單個指紋感測器裝置的情況下呈現本文中提供的範例，但這僅是出於說明的清晰性目的。在範例實施方案中，可以面板或晶片形式形成多個此類裝置，其中在過程中的適當時刻執行分離，在分離之後可以在單個裝置級別執行額外過程。
圖1示出根據本發明的各種方面的製作感測器裝置(例如，指紋感測器裝置)的範例方法1000的流程圖。範例方法1000可以(例如)與本文中所論述的任何其它方法(例如，圖3的範例方法3000、圖5的範例方法5000等)共用任何或全部特徵。圖2A-2E示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。2A-2E中示出的結構可以與圖4A-4B、圖6A-6E、圖7-9等中示出的類似結構共用任何或全部特徵。圖2A-2E可以(例如)示出在圖1的範例方法1000的各種階段(或方塊)的範例感測器裝置(例如，指紋感測器裝置)。現將一起論述圖1和2A-2E。應注意，在不脫離本發明的範圍的情況下，可以改變範例方法1000的範例方塊的順序，可以省略各種方塊，和/或可以添加各種方塊。
一般來說，範例方法1000可以包括提供半導體晶粒(方塊1010)、安裝半導體晶粒(方塊1020)、形成黏合層(方塊1030)、附著防護板(方塊1040)以及附著邊框(方塊1050)。
範例方法1000可以在方塊1005處開始執行。範例方法1000 可以回應於任何各種原因或條件而開始執行，在此提供所述各種原因或條件的非限制性範例。例如，範例方法1000可以回應於從範例方法1000或另一方法(例如，圖3的範例方法3000、圖5的範例方法5000、或任何方塊或其部分等)的另一方塊接收過程流程而開始執行。又例如，範例方法1000可以響應於方法1000所使用的材料的到達、響應於過程或設備或方法1000所使用的其它資源的可用性等而開始執行。另外，例如，範例方法1000可以回應於用戶和/或自動化命令的開始(例如，來自程序控制器、安全系統等)而開始執行。一般來說，範例方法1000可以回應於任何各種原因或條件而開始執行。因此，本發明的範圍不受任何特定開始原因或條件的特徵限制。
範例方法1000可以在塊1010處包括提供半導體晶粒。方塊1010可以包括以任何各種方式提供(例如，接收和/或製備等)半導體晶粒，在此提供所述各種方式的非限制性範例。
方塊1010可以(例如)包括接收完全製備或部分製備狀態的半導體晶粒。例如，方塊1010可以包括接收來自不同地理位置處的建造機構或相關聯分銷機構的充分製備或部分製備的晶粒、來自相同的一般地理位置處的上游製造過程的充分製備或部分製備的晶粒等。例如，可以在現場或在與本文中所論述的任何其它處理活動有關的場外執行本文中所論述的任何或全部的半導體晶粒製備活動。
半導體晶粒可以(例如)包括第一面(例如，平面的頂面或頂表面等)、第二面(例如，平面的底面或底表面等)以及在第一面與第二面之間的一個或多個週邊面(例如，平面的側面或側表面等)。半導體晶粒 可以(例如)具有50μm到150μm範圍內的厚度(例如，第一面與第二面之間的距離)。半導體晶粒可以(例如)具有小於150μm或小於100μm的厚度。如果半導體晶粒太厚，此厚度可能會約束感測指紋(例如，通過半導體晶粒感測指紋)。因此，在本文中所論述的各種實施方案中，半導體晶粒可以製備得足夠薄以通過晶粒的厚度有效感測指紋。在範例實施方案中，半導體晶粒的整個第一面和整個第二面可以是平面的(例如，在其週邊邊緣處沒有階躍或凹口等)。
半導體晶粒的第二面可以(例如)包括指紋感測單元。指紋感測單元可以(例如)包括指紋感測電路(例如，跡線、電極、光學元件、電容性感測元件等)和/或指紋處理電路(例如，用以處理或分析從指紋感測電路接收的指紋相關信號的邏輯電路等)。指紋感測單元可以(例如)通過感測和分析電容(例如，電容的改變或電容模式)、光學圖像、溫度、壓力等)來檢測指紋。指紋感測單元用以感測指紋特徵的部分(例如，在半導體晶粒的第二面上)可通常在本文中稱為指紋感測區域。在範例實施方案中，指紋感測區域可以位於半導體晶粒的中心(或居中)區中。指紋感測區域可以(例如)是長方形、正方形等。(例如)從頂視圖看，半導體晶粒可以類似地(例如)是正方形、長方形等。
半導體晶粒的第二面可以(例如)包括一個或多個導電互連結構，導電互連結構在本文中還可以稱為互連結構。此類導電互連結構可以(例如)包括導電凸塊或導電球(例如，焊料凸塊或焊料球等)、金屬樁或金屬柱(例如，銅樁或銅柱等)等。在範例實施方案中，導電互連結構可以定位在半導體晶粒的第二面上在感測單元的感測區域的周界之外(和/ 或在所述周界周圍)。例如，此類互連結構可以圍繞任何數目的面上(例如，兩個面、四個面、三個面、一個面上等)的感測單元(或感測區域)。另外，導電互連結構可以比半導體晶粒上的感測單元的任何部分(例如，電子裝置元件、電極、跡線、圖案、墊片、焊盤、探針等)更高(例如，來自基板的第二面)。
方塊1010可以包括以任何各種方式製備半導體晶粒。例如，為了獲得半導體晶粒的所要薄度(或厚度)，方塊1010可以包括將半導體晶粒薄化為所要厚度。例如，方塊1010可以包括磨削半導體晶粒的第一面(例如，半導體晶粒的背面或非活動面以實現所要厚度。又例如，方塊1010可以包括通過利用化學/機械平坦化(CMP)和/或任何其它類型的薄化處理來執行薄化。方塊1010可以(例如)包括將半導體晶粒薄化為單個晶粒或薄化為晶粒的晶片(例如在晶片薄化處理中)。以此方式，半導體晶粒可以是在薄化之後單一化的(或從晶片切分的)。應注意，在範例實施方案中，薄化還可以出現在方塊1020處執行晶粒安裝之後。
方塊1010可以包括以任何各種方式形成導電互連結構。在其中導電互連結構包括導電凸塊或導電球(例如，焊料凸塊或焊料球、晶片凸塊或晶片球等)的範例情境中，此類球或凸塊可以包括錫、銀、鉛、Sn-Pb、Sn37-Pb、Sn95-Pb、Sn-Pb-Ag、Sn-Pb-Bi、Sn-Cu、Sn-Ag、Sn-Au、Sn-Bi、Sn-Ag-Cu、Sn-Ag-Bi、Sn-Zn、Sn-Zn-Bi、其組合、其等效物等，但是本發明的範圍不限於此。方塊1010可以包括通過球落、碰撞、金屬電鍍、膠合和回焊等形成或附著此類互連結構。例如，方塊1010可以包括(例如)在導電墊或凸塊下金屬結構層(UBM)上落導電球、回焊和冷卻。
另外，在其中導電互連結構包括金屬樁或金屬柱的範例情境中，方塊1010可以(例如)包括在互連墊(例如，如在方塊1010的前一部分形成的)或其它導電層部分上形成此類結構。如本文中所論述，此類互連墊可以(例如)包括任何各種導電材料(例如，銅、鋁、銀、金、鎳、其合金等)。互連墊可以(例如)通過晶粒或基板的介電層(例如，頂部介電層)中的孔口暴露。介電層可以(例如)覆蓋互連墊的側表面和/或互連墊的頂表面的外周界。
方塊1010可以(例如)包括跨介電層和/或跨互連墊通過介電層中的孔口暴露的部分形成UBM晶種層。如本文中所論述，UBM晶種層可以(例如)包括任何各種導電材料(例如，銅、金、銀、金屬等)。可以任何各種方式(例如，濺鍍、無電極電鍍、化學氣相沉積(CVD)、物理氣相沉積(PVD)、原子層沉積(ALD)、等離子體氣相沉積等)形成UBM晶種層。
方塊1010可以(例如)包括跨UBM晶種層形成遮罩(或模板)以限定在其中形成UBM和/或導電樁(或其它互連結構)的區(或體積)。例如，遮罩可以包括光阻(PR)材料或其它材料，其可經圖案化以覆蓋除在上面形成UBM和/或導電樁的區之外的區。方塊1010接著可(例如)包括在通過遮罩暴露的UBM晶種層上形成UBM層。如本文中所論述，UBM可以包括任何各種材料(例如，鈦、鉻、鋁、鈦/鎢、鈦/鎳、銅、其合金等)。方塊1010可以包括以任何各種方式(例如，濺鍍、無電極電鍍、化學氣相沉積(CVD)、物理氣相沉積(PVD)、原子層沉積(ALD)、等離子體氣相沉積等)在UBM晶種層上形成UBM。
方塊1010接著可(例如)包括在UBM上形成導電樁。導電樁(或柱)可以包括任何各種特徵。例如，導電樁可以是圓柱形、橢圓柱形、長方形柱形等)。導電樁可以包括平坦的上端、凹面的上端或凸面的上端。導電樁可以(例如)包括本文中關於導體層所論述的任何材料。在範例實施方案中，導電樁可以包括銅(例如，純銅、具有一些雜質的銅等)、銅合金等)。在範例實施方案中，方塊1010(或範例方法1000的另一方塊)還可以包括在導電樁上形成焊料蓋(或圓頂)。
在形成導電樁之後，方塊1010可以包括剝離或移除遮罩(例如，化學剝離、灰化等)。另外，方塊1010可以包括(例如，通過化學蝕刻等)移除UBM晶種層的至少一部分(例如，至少未被導電樁覆蓋的部分)。應注意，在晶種層的蝕刻期間，可以(例如)蝕刻至少UBM晶種層的側邊緣部分。此類蝕刻可以(例如)導致導電樁和/或UBM下方的底切。
應注意，儘管本文中呈現的範例通常涉及單個半導體晶粒，但是還可以提供任何數目的半導體晶粒和/或其它電子元件。
示出方塊1010的各種方面的範例實施方案200A在圖2A處示出。範例實施方案200A(或組合件、子組合件、封裝等)包括半導體晶粒110，所述半導體晶粒具有第一面110a(例如，平面的頂面或頂表面等)、第二面110b(例如，平面的底面或底表面等)以及在第一面110a與第二面100b之間的一個或多個週邊面110c(例如，平面的側面或側表面等)。半導體晶粒110可以(例如)具有50μm到150μm範圍內的厚度(例如，第一面與第二面之間的距離)。半導體晶粒110a可以(例如)具有小於150μm或小於100μm的厚度。在範例實施方案200A中，半導體晶粒110的整個第 一面110a和整個第二面110b可以是平面的(例如，在其週邊邊緣處沒有階躍或凹口等)。
範例半導體晶粒110的第二面110b包括指紋感測單元112。範例指紋感測單元112包括指紋感測電路(例如，跡線、電極、光學元件、電容性感測元件等)和/或指紋處理電路(例如，用以處理或分析從指紋感測電路接收的指紋相關信號的邏輯電路等)。指紋感測單元112可以(例如)通過感測電容(例如，電容的改變或電容模式)、光學圖像、溫度、壓力等)來檢測指紋。指紋感測單元112用以感測指紋特徵的部分(例如，在半導體晶粒的第二面上)可通常在本文中稱為指紋感測區域。在範例實施方案中，指紋感測區域可以位於半導體晶粒110的中心(或居中)區中。指紋感測區域可以(例如)是長方形、正方形等。(例如)從頂視圖看，半導體晶粒110可以類似地(例如)是正方形、長方形等。
範例半導體晶粒110的第二面110b包括多個導電互連結構111，此處導電互連結構111還可以稱為互連結構111。此類導電互連結構111可以(例如)包括導電凸塊或導電球(例如，焊料凸塊或焊料球等)、金屬樁或金屬柱(例如，銅樁或銅柱等)等。在範例實施方案200A中，導電互連結構111定位在半導體晶粒110的第二面110b上在感測單元112(或其感測區域)的周界之外(和/或在所述周界周圍)。雖然示出範例互連結構111圍繞兩個面上的指紋感測單元112(或感測區域)，但是可以圍繞任何數目的面(例如，四個面、兩個面、三個面、一個面等)。範例互連結構111比半導體晶粒110上的感測單元112的任何部分(例如，電子裝置元件、電極、跡線、圖案、墊片、焊盤、探針等)更高(例如，來自基板110的第 二面110b)。
一般來說，方塊1010可以包括製備半導體晶粒。因此，本發明的範圍不應受半導體晶粒的任何特定類型的特徵或製備半導體晶粒的任何特定方式的特徵限制。
範例方法1000可以在方塊1020處包括安裝半導體晶粒。方塊1020可以包括以任何各種方式安裝半導體晶粒(和/或其它電子元件)，在此提供所述各種方式的非限制性範例。
方塊1020可以(例如)包括將半導體晶粒安裝到包括任何各種特徵的基板。例如，基板可以包括電路板材料(例如，FR-4玻璃環氧樹脂、G-10布紋玻璃和環氧樹脂、FR-n(其中n=1至6)、CEM-m(其中m=1至4)、層合材料、層合熱固性樹脂、包銅層合材料、樹脂浸漬B狀態布(預浸體)、聚四氟乙烯、其組合、其等效物等)。基板還可以(例如)是無芯的(coreless)。基板可以包括一層或多層的任何各種介電材料，例如，無機介電材料(例如，Si3N4、SiO2、SiON、SiN、氧化物、氮化物等)和/或有機介電材料(例如，聚合物、聚醯亞胺(PI)、苯並環丁烯(BCB)、聚苯並惡唑(PBO)、雙馬來醯亞胺三嗪(BT)、模塑材料、酚醛樹脂、環氧樹脂等)，但本發明的範圍不限於此。基板可以(例如)包括矽或任何各種半導體材料。基板還可以(例如)包括玻璃(例如，玻璃、藍寶石玻璃、鋼化玻璃等)或金屬板(或晶片)。基板可以包括任何各種配置。例如，基板可以呈晶片或面板形式。基板還可以(例如)呈切分或單一化形式。
基板可以(例如)是或僅包括不具有導電路由路徑的疏鬆材料。替代地，例如，基板可以包括一個或多個導電層、通孔、和或信號分 配結構。例如，基板可以包括從基板的頂表面到或朝向基板的底表面延伸至基板中的導電通孔。又例如，替代延伸直通基板的導電通孔(或除延伸直通基板的導電通孔之外)，基板可以包括呈間接路徑(例如，呈包括垂直導電路徑段或部分和橫嚮導電路徑段或部分的組合的導電路徑)在基板的頂表面與底表面之間延伸的導電路徑。
方塊1020可以(例如)包括以任何各種方式將半導體晶粒(例如，如在方塊1010處提供的半導體晶粒)安裝(或附著)到基板。例如，方塊1020可以包括利用在方塊1010處提供(或形成)的導電互連結構將半導體晶粒安裝(或附著)到基板。應注意，在其中在方塊1010處並未提供(或形成)導電互連的範例實施方案中，方塊1020可以包括在半導體晶粒上和/或在基板上形成此類結構。方塊1020可以(例如)包括利用任何各種類型的互連結構(例如，導電球或導電凸塊、焊料球或焊料凸塊、金屬柱或金屬樁、銅柱或銅樁、焊料加蓋柱或焊料加蓋樁、焊膠、導電黏合劑等)將半導體晶粒安裝到基板。方塊1020可以包括利用任何各種接合技術(例如，熱壓(TC)接合、熱壓非導電膠(TCNCP)接合、塊回焊、黏合附著等)將電子元件安裝到基板。在範例實施方案中，方塊1020可以包括利用導電凸塊將半導體晶粒的晶粒接合墊(或跡線、焊盤、圖案等)電連接到基板的對應基板接合墊(或跡線、焊盤、圖案等)。此類晶粒接合墊可以(例如)通過半導體晶粒上的介電層(或鈍化層)中的對應開口(或孔口)暴露。類似地，此類基板接合墊可以(例如)通過基板上的介電層(或鈍化層)中的對應開口(或孔口)暴露。
方塊1020還可以(例如)包括在安裝的半導體晶粒與基板 之間形成底部填充膠。底部填充膠可以包括任何各種類型的材料，例如，環氧樹脂、熱塑性材料、熱可固化材料、聚醯亞胺、聚氨酯、聚合材料、填充環氧樹脂、填充熱塑性材料、填充熱可固化材料、填充聚醯亞胺、填充聚氨酯、填充聚合材料、助熔底部填充膠、及其等效物，但是並不限於此。可以任何各種方式(例如，毛細底部填充、液體或膠或預製片材的預塗覆底部填充、模塑底部填充等)形成底部填充膠。此類底部填充膠可以包括任何各種特徵(例如，毛細底部填充膠、預塗覆底部填充膠、模塑底部填充膠等)。應注意，在各種範例實施方案中，不在方塊1030處形成(例如，從不形成、在後續過程步驟形成等)此類底部填充膠。
示出方塊1020的各種方面的範例實施方案200B在圖2B處示出。範例實施方案200B(或組合件、子組合件、封裝等)包括如關於方塊1010和圖2A所論述的半導體晶粒110。半導體晶粒110的底面110b通過導電互連結構111電性且機械地附著到基板120的頂面120a。具體來說，基板120的頂面120a具有基板晶粒墊和導電跡線121(或圖案、焊盤、墊片等)，導電互連結構111連接到所述基板晶粒墊和導電跡線121(或圖案、焊盤、墊片等)。範例軌跡121又連接到從基板120的頂面120a到基板的底面120b延伸穿過基板的導電通孔122。此類導電通孔122可以(例如)用來將指紋感測器裝置連接到另一電路。雖然範例實施方案200B示出為在半導體晶粒110與基板120之間沒有底部填充膠，但是底部填充膠可以填充此空間。
應注意，儘管本文中提供的範例通常涉及安裝單個半導體晶粒，但是還可以安裝任何數目的晶粒和/或其它電子元件。
一般來說，方塊1020可以包括安裝半導體晶粒。因此，本發明的範圍不應受半導體晶粒的任何特定類型的特徵或安裝半導體晶粒的任何特定方式的特徵限制。
範例方法1000可以在方塊1030處包括形成黏合層。方塊1030可以包括以任何各種方式形成黏合層，在此提供所述各種方式的非限制性範例。
黏合層可以(例如)具有第一面(例如，平面的頂面等)、第二面(例如，平面的底面等)以及在第一面與第二面之間的週邊面(例如，側面表面等)。黏合層的第二面(例如，下側面)可以(例如)直接接觸和/或覆蓋在方塊1020處安裝的半導體晶粒的第一面(例如，上側面)。黏合層可以(例如)包括均勻的厚度和/或可以覆蓋半導體晶粒的整個第一面(例如，頂面)。
在範例實施方案中，黏合層可以是或包括非導電黏合劑(例如，包括一個或多個介電材料)，所述非導電黏合劑電隔離半導體晶粒的整個第一面，例如，在半導體晶粒的第一面與黏附到黏合層的與半導體晶粒相反的一面的元件(例如，防護板或防護層等)之間提供非導電路徑。黏合層可以(例如)設定大小為恰好匹配半導體晶粒的第一面的區域。另外，黏合層的區域可以小於導電晶粒的第一面，例如保留半導體晶粒的第一面的一部分不被黏合層覆蓋。又例如，黏合層的區域可以大於半導體晶粒的第一面。
黏合層可以包括任何各種特徵。例如，黏合層可以包括液體或膠、預製黏合片材或薄膜等。
方塊1030可以包括以任何各種方式形成黏合層。例如，方塊1030可以包括通過光刻、絲網印刷、滴塗和鋪開或壓滾、列印、塗刷、浸漬、層合預製片材或薄膜等形成黏合層。
示出方塊1030的各種方面的範例實施方案200C在圖2C處示出。範例實施方案200C(或組合件、子組合件、封裝等)包括在半導體晶粒110的頂面110a上(例如，直接在頂面110a上等)的黏合層130。範例黏合層130具有均勻的厚度並設定大小為恰好匹配(例如，通常在工程和/或製造準確性內匹配)半導體晶粒110的頂面110a的區域。範例黏合層130可以(例如)包括非導電黏合劑的固體層，例如，在半導體晶粒110的頂面110a與黏附到黏合層130的與半導體晶粒110相反的一面的元件(例如，防護板或防護層等)之間提供非導電路徑。在替代實施方案中，黏合層130可以包括孔口(或開口)，通過所述孔口(或開口)可以與另一元件進行導電接觸。
一般來說，方塊1030可以包括形成黏合層。因此，本發明的範圍不應受黏合層的任何特定類型的特徵或形成黏合層的任何特定方式的特徵限制。
範例方法1000可以在方塊1040處包括附著防護板。方塊1040可以包括以任何各種方式附著防護板，在此提供所述各種方式的非限制性範例。
防護板(或層)可以包括任何各種特徵。防護板可以(例如)防止半導體晶粒受外部力和/或污染物(例如，歸因於手指按壓、滑動等)影響。防護板可以(例如)覆蓋半導體晶粒的至少第一面。在範例實施方 案中，防護板可以具有比半導體晶粒更大的區域(例如，懸垂於導電晶粒之上)。雖然範例防護板可以包括預製材料板(例如，在方塊1040處的附著之前形成)，但是本發明的範圍不限於此。例如，可以當在黏合層130上形成防護板的材料時(或在此之後)形成防護板。
防護板可以包括各種材料中的任何一個或多個。例如，防護板可以包括玻璃、藍寶石、藍寶石玻璃、鋼化玻璃、塑膠、聚碳酸酯(PC)、聚醯胺(PI)等中的一個或多個，但是本發明的各方面並不限於此。防護板可以(例如)包括平面的第一面(例如，頂表面等)、平面的第二面(例如，底表面等)以及在第一面與第二面之間的平面的週邊面(例如，側面等)。防護板的第二面(例如，底面)可以(例如)黏附到黏合層的第一面(例如，頂面)。
示出方塊1040的各種方面的範例實施方案200D在圖2D處示出。範例實施方案200D(或組合件、子組合件、封裝等)包括防護板140，底面140b(或表面)(例如，其一部分)黏附到黏合層130的頂面(或表面)。防護板140的頂面140a(或表面)暴露，例如，用於與被感測的手指接觸或至少與被感測的手指極為接近。示出範例防護板140具有的區域大體上大於半導體晶粒110和黏合層130的區域，例如懸垂於半導體晶粒110和黏合層130的週邊邊緣之上。
一般來說，方塊1040可以包括附著防護板。因此，本發明的範圍不應受防護板的任何特定類型的特徵或附著防護板的任何特定方式的特徵限制。
範例方法1000可以在方塊1050處包括附著邊框。方塊1010 可以包括以任何各種方式附著邊框，在此提供所述各種方式的非限制性範例。
邊框可以(例如)經配置且經附著以將防護板耦合到基板和/或保護防護板的週邊邊緣。例如，邊框可以覆蓋(例如，在頂面和/或側面和/或底面處)在方塊1040處附著到半導體晶粒的防護板。在範例實施方案中，邊框可以僅接觸(或直接覆蓋)防護板的第一面(例如，頂面)的週邊。邊框還可以(例如)附著到(例如，黏附到等)基板120的第一面120a。邊框可以(例如)在四個、兩個或任何數目個面上圍繞防護板、黏合層和半導體晶粒。邊框可以(例如)提供對指紋感測器裝置的所有元件的覆蓋，例如除基板的周界區外(在各種範例實施方案中，還可以覆蓋基板的周界區)。
示出方塊1050的各種方面的範例實施方案200E在圖2E處示出。範例實施方案200E(或組合件、子組合件、封裝等)包括邊框150，所述邊框包含主體部分151、貼附部分152(例如，在邊框150的上端處)以及基底部分153(例如，在邊框150的下端處)。範例邊框150圍繞半導體晶粒110、黏合層130和防護板140的側面。範例邊框150保留防護板140的第一面140a(例如，頂面)(或其中心區域)暴露，例如，用於與手指接觸或與手指極為接近。基底部分153的底表面附著(例如，黏附等)到基板120的頂面120a。主體部分151將基底部分153和貼附部分152耦合到彼此。貼附部分150包括朝向半導體晶粒110的中心向內延伸的部分。貼附部分152的此部分跨防護板140的頂面140a的週邊延伸。貼附部分152的此底面的底面接觸防護板140並將防護板140固定到基板120。
在範例實施方案200E中，在半導體晶粒的上側面110a之上不存在電導體(例如，指紋感測跡線或元件或電極或圖案等)。然而，情況並不總是如此，如將在本文中呈現的其它範例實施方案中示出。
一般來說，方塊1050可以包括附著邊框。因此，本發明的範圍不應受邊框的任何特定類型的特徵或附著邊框的任何特定方式的特徵限制。
範例方法1000可以在方塊1095處包括必要時繼續製造(或處理)。方塊1095可以包括以任何各種方式繼續製造(或處理)，在此提供所述各種方式的非限制性範例。
例如，方塊1095可以包括執行額外的基板處理功能、將額外電子元件安裝到基板、將裝置互連結構附著到基板、包封、覆蓋、一般封裝、測試、標記、運送、將指紋感測裝置100整合到另一產品中等。又例如，方塊1095可以包括將範例方法1000的執行流程引導到範例方法1000的任何前一步驟。另外例如，方塊1095可以包括將範例方法1000的執行流程引導到本文中所揭示的任何其它方法(例如，圖3的範例方法3000、圖5的範例方法5000、或任何方塊或任何方塊的部分，等)。又例如，方塊1095可以包括將範例方法1000的執行流程引導到本文中未揭示的任何方法或其部分。
一般來說，方塊1095可以包括繼續製造(或處理)。因此，本發明的範圍不應受繼續製造(或處理)的任何特定方式或類型的特徵限制。
如圖2E中示出的範例實施方案200E中所示(所述範例實施 方案在本文中還可以稱為指紋感測器裝置100(或封裝))，根據圖1的範例方法1000製造的範例指紋感測器裝置可以在手指(或其指紋)觸摸或極為接近於防護板140的頂面140a時基於電容的改變而感測指紋，其在半導體晶粒110的頂面110a上，所述半導體晶粒在其底面110b上包含多個第一導電凸塊111和指紋感測單元112。指紋感測器裝置(或封裝)100可進一步包含電連接到基板120的導電圖案(例如，在其底面120b和/或頂面120a上)的柔性電路板或其它互連結構(未示出)。柔性電路板可以(例如)電連接到指紋感測器封裝100的一個或多個輸入和/或輸出墊以及電連接到外部基板或外部電子裝置。由於範例半導體晶粒110以倒裝晶片配置安裝在基板120上，因此指紋感測器封裝100提供相對於其它配置簡化的製造過程。
如本文中所陳述，本發明的範圍不限於所論述的具體範例方法步驟(或相關聯結構)。例如，可以從圖1的範例方法1000移除各種方塊(或其部分)或將各種方塊(或其部分)添加到圖1的範例方法1000，可以重新排列各種方塊(或其部分)，可以修改各種方塊(或其部分)等。例如，在範例實施方案中，囊封材料可用於圍繞半導體晶粒，防護層可以包覆在半導體晶粒的第一面上和/或包覆在囊封材料上，可以省略邊框，等。在圖3和4A-4B中示出此類範例實施方案。
圖3示出根據本發明的各種方面的製作感測器裝置(例如，指紋感測器裝置)的範例方法3000的流程圖。範例方法3000可以(例如)與本文中所論述的任何其它方法(例如，圖1的範例方法1000、圖5的範例方法5000等)共用任何或全部特徵。圖4A-4B示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。 4A-4B中示出的結構可以與圖2A-2E、圖6A-6E、圖7-9等中示出的類似結構共用任何或全部特徵。圖4A-4B可以(例如)示出在圖3的範例方法3000的各種階段(或方塊)的範例感測器裝置(例如，指紋感測器裝置)。現將一起論述圖3和4A-4B。應注意，在不脫離本發明的範圍的情況下，可以改變範例方法3000的範例方塊(或其部分)的順序，可以省略或添加各種方塊(或其部分)，和/或可以改變各種方塊(或其部分)。
一般來說，範例方法3000可以包括提供半導體晶粒(方塊3010)、安裝半導體晶粒(方塊3020)、包封(方塊3025)以及形成防護層(方塊3040)。
範例方法3000可以在方塊3005處開始執行。範例方法3000可以出於任何各種原因而開始執行，在此提供所述各種原因的非限制性範例。例如，範例方法3000可以出於本文中關於圖1的範例方法1000所論述的任何或全部原因而開始執行。例如，方塊3005可以與圖1的範例方法1000的方塊1005共用任何或全部特徵。
範例方法3000可以在方塊3010處包括提供半導體晶粒。方塊1010可以包括以任何各種方式提供半導體晶粒，在此提供所述各種方式的非限制性範例。方塊3010可以(例如)與圖1的範例方法1000的方塊1010共用任何或全部特徵。
範例方法3000可以在方塊3020處包括安裝半導體晶粒。方塊3020可以包括以任何各種方式安裝半導體晶粒，在此提供所述各種方式的非限制性範例。方塊3020可以(例如)與圖1的範例方法1000的方塊1020共用任何或全部特徵。
範例方法3000可以在方塊3025處包括包封。方塊3025可以包括以任何各種方式包封(例如，半導體晶粒、基板等)，在此提供所述各種方式的非限制性範例。
方塊3025可以(例如)包括形成囊封材料，所述囊封材料覆蓋基板的至少第一面或表面(例如，頂面或頂表面)，在方塊3020處在所述第一面或表面安裝半導體晶粒。囊封材料可以(例如)具有第二面或表面(例如，底面或底表面)，所述第二面或表面覆蓋基板的整個第一面(例如，尚未被半導體晶粒和/或互連結構覆蓋的部分)，但是也可以僅覆蓋基板的一部分(例如，保留基板的第一面的週邊部分或環形部分暴露)。
囊封材料還可以(例如)覆蓋和圍繞半導體晶粒的至少週邊面或週邊表面(例如，側面)。在範例實施方案中，囊封材料具有與半導體晶粒的第一面或表面(例如，頂面或頂表面)共面的第一面或表面(例如，頂面或頂表面)。然而，在替代實施方案中，囊封材料可以覆蓋第一面或半導體晶粒，或可以高於半導體晶粒的第一面且包括暴露半導體晶粒的第一面(或其一部分)的孔口。
囊封材料可以包括任何各種包封或模塑材料(例如，樹脂、聚合物、聚合物複合材料、具有填充劑的聚合物、環氧樹脂、具有填充劑的環氧樹脂、具有填充劑的環氧丙烯酸酯、矽酮樹脂、其組合、其等效物等)。囊封材料可以(例如)包括聚醯亞胺(PI)、苯並環丁烯(BCB)、聚苯並惡唑(PBO)、雙馬來醯亞胺三嗪(BT)、酚醛樹脂、本文中所論述的任何介電材料等中的任何一個或多個。
方塊3025可以包括以任何各種方式(壓縮模塑、傳遞模塑、 液體包封劑模塑、真空層合、膠印刷、薄膜輔助模塑等)形成囊封材料。在範例實施方案中，方塊3025可以包括利用密封模套或薄膜輔助模塑技術來保持半導體晶粒的第一面不含囊封材料。在另一範例實施方案中，方塊3025可以最初形成囊封材料以覆蓋半導體晶粒的第一面，且接著薄化囊封材料直到半導體晶粒的第一面從囊封材料暴露。在再一範例實施方案中，方塊3025可以最初形成囊封材料以覆蓋半導體晶粒的第一面，且接著薄化囊封材料和半導體晶粒兩者以將囊封材料和半導體晶粒兩者薄化為所要厚度。
如關於範例方法1000的方塊1020所論述，可以在半導體晶粒與基板之間形成底部填充膠。如同方塊1020一樣，方塊3020也可以已經形成底部填充膠。在此情況下，囊封材料還可以覆蓋此類底部填充膠的週邊表面(例如，側表面)。在另一範例實施方案中，方塊3025可以包括用囊封材料底部填充半導體晶粒(例如，作為模塑底部填充膠等)。
示出方塊3025的各種方面的範例實施方案400A在圖4A處示出。範例實施方案400A(和範例實施方案400B)的元件可以(例如)與本文中示出和論述的其它範例實施方案的類似編號的元件共用任何或全部特徵，並且因此將不重複此類組件的詳細論述。
範例實施方案400A(或組合件、子組合件、封裝等)包括覆蓋基板120的第一面120a(例如，頂面等)的至少一部分的囊封材料230。範例囊封材料230又覆蓋在基板120的第一面120a上或在所述第一面處的導電跡線121(或圖案、焊盤、墊片等)。範例囊封材料230還覆蓋並圍繞半導體晶粒110的側面110c。範例囊封材料230還填充半導體晶粒110的底 面110b與基板120的頂面120a之間的體積(例如，作為底部填充膠)並圍繞導電互連結構111。範例囊封材料230具有與半導體晶粒110a的第一面110a共面的第一面或表面230a(例如，頂面或頂表面)。
一般來說，方塊3025可以包括包封。因此，本發明的範圍不應受囊封材料的任何特定類型的特徵或包封的任何特定方式的特徵限制。
範例方法3000可以在方塊3040處包括形成防護層。方塊3040可以包括以任何各種方式形成防護層(例如，在半導體晶粒上、在囊封材料上等)，在此提供所述各種方式的非限制性範例。方塊3040可以(例如)與圖1的範例方法1000的方塊1040共用任何或全部特徵。應注意，防護層也可以稱為保護層。
防護層(或板)可以包括任何各種特徵。防護層可以(例如)防止半導體晶粒受外部力和/或污染物(例如，歸因於手指按壓、滑動等)影響。防護層可以(例如)具有背對半導體晶粒的第一面(例如，頂面或頂表面)、朝向半導體晶粒的第二面(例如，底面或底表面)以及在第一面與第二面之間的週邊面(例如，側面或側表面)。防護層可以(例如)包括均勻的厚度層。防護層可以(例如)定位在方塊3020處安裝的半導體晶粒的第一面(例如，頂面)上或跨所述第一面定位。防護層可以(例如)覆蓋半導體晶粒的整個第一面。防護層還可以(例如)定位在方塊3030處形成的囊封材料的第一面(例如，頂面)上或跨所述第一面。防護層可以(例如)覆蓋囊封材料的整個第一面或可以僅覆蓋囊封材料的第一面的在半導體晶粒的第一面的週邊周圍的一部分。例如，囊封材料的頂面的外周界可 以保持不被防護層覆蓋。
防護層可以包括任何各種材料。例如，防護層可以是或包括氧化鋁(Al2O3)、其任何變體等。又例如，防護層可以是或包括聚合物。一般來說，防護層可以是或包括本文中揭示的各種介電材料中的任何一個或多個。防護層還可以(例如)與本文中關於圖1所論述的防護板共用任何或全部特徵。
方塊3040可以包括以任何各種方式形成防護層。例如，方塊3040可以包括形成遮罩圖案以覆蓋除意圖由防護層覆蓋的區之外的區。方塊3040接著可(例如)包括將防護層材料塗覆到組合件的未被遮罩層覆蓋的部分(例如，半導體晶粒的第一面的一部分或全部、囊封材料的一部分或全部等)。在另一範例實施方案中，方塊3040可以利用選擇性印刷或不使用遮罩層的塗覆來塗覆防護層。在再一範例實施方案中，方塊3040可以包括形成防護層為跨至少半導體晶粒的整個第一面、囊封材料的整個頂面和/或側面、和/或基板的暴露頂面的覆蓋層。在再一範例實施方案中，方塊3040可以包括塗覆和黏附防護層材料的預製板或薄膜。
例如，在其中防護層為或包括聚合物的範例實施方案中，方塊3040可以包括包覆聚合物(例如，利用本文中呈現的任何層形成工藝)且接著固化聚合物(例如，通過施加熱量、紫外輻射等)。又例如，在其中防護層包括氧化鋁(或類似物)層的範例實施方案中，方塊3040可以包括通過粒子衝擊(或機械衝擊)、熱噴塗、等離子體噴塗、超音速火焰(HVOF)噴塗等形成氧化鋁層。
示出方塊3040的各種方面的範例實施方案400B在圖4B處 示出。範例實施方案400B(或組合件、子組合件、封裝等)包括防護層240。範例防護層240具有背對半導體晶粒110的第一面(例如，頂面或頂表面)、朝向半導體晶粒110的第二面(例如，底面或底表面)以及在第一面與第二面之間的週邊面(例如，側面或側表面)。範例防護層240覆蓋半導體晶粒的整個頂面110a，並覆蓋囊封材料230的在半導體晶粒110周界周圍的頂面230a。囊封材料230的頂面230a的外周界不被範例防護層240覆蓋，但是在另一範例實施方案中可以(例如)被覆蓋。
在範例實施方案400B中，在半導體晶粒的上側面110a之上不存在電導體(例如，指紋感測跡線或元件或電極或圖案等)。然而，情況並不總是如此，如將在本文中呈現的其它範例實施方案中示出。
一般來說，方塊3040可以包括形成防護層。因此，本發明的範圍不應受防護層的任何特定類型的特徵或形成防護層的任何特定方式的特徵限制。
範例方法3000可以在方塊3095處包括必要時繼續製造(或處理)。方塊3095可以包括以任何各種方式繼續製造(或處理)，在此提供所述各種方式的非限制性範例。方塊3095可以(例如)與圖1的範例方法1000的方塊1095共用任何或全部特徵。
如圖4B中示出的範例實施方案400B中所示(所述範例實施方案在本文中還可以稱為指紋感測器裝置200(或封裝))，根據圖3的範例方法3000製造的範例指紋感測器裝置可以在手指(或其指紋)觸摸或極為接近於防護層240的頂面140a時基於電容的改變而感測指紋，其在半導體晶粒110的第一面110a上，所述半導體晶粒在其底面110b上包含多個第 一導電凸塊111和指紋感測單元112。指紋感測器裝置(或封裝)200可進一步包含電連接到基板120的導電圖案(例如，在其底面120b和/或頂面120a上)的柔性電路板或其它互連結構(未示出)。柔性電路板可以(例如)電連接到指紋感測器封裝200的一個或多個輸入和/或輸出墊以及電連接到外部基板或外部電子裝置。由於範例半導體晶粒110以倒裝晶片配置安裝在基板120上，因此指紋感測器封裝200提供相對於其它配置簡化的製造過程。
雖然本文中呈現的各種範例實施方案通過半導體晶粒感測指紋，但是可以替代地(或又)通過半導體晶粒所附著到的基板執行指紋感測。現將呈現此配置的範例實施方案以及用於製作此配置的方法。
圖5示出根據本發明的各種方面的製作感測器裝置(例如，指紋感測器裝置)的範例方法5000的流程圖。範例方法5000可以(例如)與本文中所論述的任何其它方法(例如，圖1的範例方法1000、圖3的範例方法3000等)共用任何或全部特徵。圖6A-6E示出說明根據本發明的各種方面的範例感測器裝置的橫截面圖以及製作感測器裝置的範例方法。6A-6E中示出的結構可以與圖2A-2E、圖4A-4B、圖7-9等中示出的類似結構共用任何或全部特徵。圖6A-6E可以(例如)示出在圖5的範例方法5000的各種階段(或方塊)的範例感測器裝置(例如，指紋感測器裝置)。現將一起論述圖5和6A-6E。應注意，在不脫離本發明的範圍的情況下，可以改變範例方法5000的範例方塊(或其部分)的順序，可以省略或添加各種方塊(或其部分)，和/或可以改變各種方塊(或其部分)。
一般來說，範例方法5000可以包括提供半導體晶粒(方塊5010)、安裝半導體晶粒(方塊5020)、包封(方塊5025)、形成通孔(方塊 5027)、形成導電層(方塊5028)、形成互連結構(方塊5035)以及形成防護層(方塊5040)。
範例方法5000可以在方塊5005處開始執行。範例方法5000可以出於任何各種原因而開始執行，在此提供所述各種原因的非限制性範例。例如，範例方法5000可以出於本文中關於圖1的範例方法1000所論述的任何或全部原因而開始執行。例如，方塊5005可以與圖1的範例方法1000的方塊1005共用任何或全部特徵。
範例方法5000可以在方塊5010處包括提供半導體晶粒。方塊5010可以包括以任何各種方式提供半導體晶粒，在此提供所述各種方式的非限制性範例。方塊5010可以(例如)與圖1的範例方法1000的方塊1010共用任何或全部特徵。
範例方法5000可以在方塊5020處包括安裝半導體晶粒。方塊5020可以包括以任何各種方式安裝半導體晶粒，在此提供所述各種方式的非限制性範例。方塊5020可以(例如)與圖1的範例方法1000的方塊1020共用任何或全部特徵。
範例方法5000可以在方塊5025處包括包封。方塊3025可以包括以任何各種方式包封(例如，半導體晶粒、基板等)，在此提供所述各種方式的非限制性範例。方塊5025可以(例如)與圖3的範例方法3000的方塊3025共用任何或全部特徵。
如方塊3025的論述中所提及，可以保留半導體晶粒的第一面(例如，頂面或頂表面等)暴露的方式或以覆蓋半導體晶粒的第一面的方式形成囊封材料。在本文中所論述的方塊5025的範例實施方案中，囊封 材料形成為覆蓋半導體晶粒的第一面(例如，覆蓋半導體晶粒的整個第一面)。
示出方塊5025的各種方面的範例實施方案600A在圖6A處示出。範例實施方案600A的元件可以(例如)與本文中示出和論述的其它範例實施方案的類似編號的元件共用任何或全部特徵，並且因此將不重複此類組件的詳細論述。應注意，相對于本文中(例如，關於圖2A-2E、圖4A-4B、圖7-8等)呈現的各種其它圖式，一般倒轉地示出圖6A-6E。然而，保持類似組件的編號。
應注意，如同本文中的所有類似編號的元件一樣，範例實施方案600A的基板120可以與本文中所論述的圖1的基板(例如，圖2B的範例實施方案200B的基板120)共用任何或全部特徵。例如，在範例實施方案中，基板120可以是或包括玻璃和/或的任何各種材料，和/或可以具有被配置成允許通過其(例如，在感測區域112處)測量指紋相關電容(或電容變化)的厚度和/或電滲透性。
範例實施方案600A(或組合件、子組合件、封裝等)包括覆蓋基板120的第一面120a的囊封材料330。應注意，囊封材料330可以與本文中所揭示的其它囊封材料(例如，圖4A-4B的範例囊封材料230等)共用任何或全部特徵。
範例囊封材料330又覆蓋在基板120的第一面120a上或在所述第一面處的導電跡線121(或圖案、焊盤、墊片等)。範例囊封材料330另外覆蓋並圍繞半導體晶粒110的週邊面110c。範例囊封材料330進一步填充半導體晶粒110(例如，其第二面110b)與基板120(例如，其第一面 120a)之間的體積，例如作為底部填充膠，並且圍繞導電互連結構111。然而，應注意，在範例實施方案中，半導體晶粒110與基板120之間的體積可以保持為空(例如，如果形成則與互連結構111隔開)。在另一範例實施方案中，可以通過與囊封材料330不同的底部填充材料填充半導體晶粒110與基板120之間的體積。
一般來說，方塊5025可以包括包封。因此，本發明的範圍不應受囊封材料的任何特定類型的特徵或包封的任何特定方式的特徵限制。
範例方法5000可以在方塊5027處包括形成通孔。方塊5027可以包括以任何各種方式形成一個或多個通孔(例如，穿過在方塊5025處形成的囊封材料等)，在此提供所述各種方式的非限制性範例。通孔也可以稱為貫穿孔。
通孔可以(例如)延伸穿過(例如，完全穿過等)囊封材料。例如，通孔可以從囊封材料的第一面或表面延伸到囊封材料的第二面或表面。例如，通孔可以從囊封材料的第一面延伸到基板的第一面上的圖案(或跡線、或焊盤、或墊片、或通孔終止處等)，其經由通孔通過囊封材料暴露。
方塊5027可以(例如)包括通過消融通孔(例如，鐳射消融、等離子體消融、機械消融或鑽孔等)形成通孔。方塊5027還可以(例如)包括利用化學蝕刻或溶解形成通孔。另外例如，方塊5027可以與方塊5027組合以在執行包封時形成通孔(例如，利用掩蔽、模套特徵等以在形成囊封材料時形成通孔)。
示出方塊5027的各種方面的範例實施方案600B在圖6B處 示出。範例實施方案600B(或組合件、子組合件、封裝等)包括穿過囊封材料330的通孔331(或貫穿孔)。範例通孔331從囊封材料330的第一面330a延伸到囊封材料330的第二面330b並暴露基板120的導電跡線121(或導電通孔122)。示出範例通孔331以囊封材料330的傾斜內側面為界。例如，範例通孔331在囊封材料330的第一表面330a處比在囊封材料的第二表面330b處更寬。此類形狀可以有利地改善導電層或填充劑的後續形成。範例通孔331還可以具有直面(例如，正交于囊封材料330的第一表面330a和第二表面330b)。
一般來說，方塊5027可以包括形成一個或多個通孔。因此，本發明的範圍不應受通孔(或貫穿孔)的任何特定類型的特徵或形成通孔的任何方式的特徵限制。
範例方法5000可以在方塊5028處包括形成導電層。方塊5028可以包括以任何各種方式形成導電層，在此提供所述各種方式的非限制性範例。
導電層可以(例如)包括圖案，所述圖案包含任何各種特徵。例如，導電層可以包括跡線、墊片、焊盤、通孔襯墊或填充劑等。導電層也可以稱為再分佈層。
導電層可以(例如)包括用於填充在方塊5027處形成的通孔或為所述通孔加襯的導電通孔部分。導電通孔部分可以(例如)在經由通孔穿過囊封材料暴露的基板的圖案上形成和/或電連接到所述圖案。在範例實施方案中，導電層的導電通孔部分可以為界定(或限定)通孔的囊封材料的壁加襯。接著可保留通過導電層襯墊界定(或限定)的空腔。此類 空腔可以保留不填充、用介電材料填充、用導電材料(例如，與導電層材料不同的材料，例如焊接材料、導電環氧樹脂等)填充等。在另一範例實施方案中，導電層可以完全地填充通孔。
導電層還可以(例如)包括在其上可以形成互連結構(例如，在方塊5035處)的導電焊盤部分(或墊片、跡線、圖案等)。此外，導電層可以(例如)包括在導電通孔部分與導電焊盤部分之間延伸的導電跡線部分。
導電層可以包括任何各種材料(例如，銅、鋁、鎳、鐵、銀、金、鈦、鉻、鎢、鈀、其組合、其合金、其等效物等)，但是本發明的範圍不限於此。
方塊5028可以(例如)包括利用各種工藝(例如，電解電鍍、無電極電鍍、化學氣相沉積(CVD)、濺鍍或物理氣相沉積(PVD)、原子層沉積(ALD)、等離子體氣相沉積、印刷、絲網印刷、光刻等)中的任何一個或多個形成(或沉積)導電層，但是本發明的範圍不限於此。
示出方塊5028的各種方面的範例實施方案600C在圖6C處示出。範例實施方案600C(或組合件、子組合件、封裝等)包括導電層350，所述導電層包括導電通孔部分350a，所述導電通孔部分在通過穿過囊封材料330的通孔331暴露的基板120的導電跡線121(或導電通孔122)上，且又為界定(或限定)通孔331的囊封材料330的壁加襯，從而留下可以填充或可以不填充的空腔。範例導電層350又包括在囊封材料330的第一面330a上的導電焊盤部分350b，在所述導電焊盤部分上可以形成互連結構(例如，在方塊5035處)。範例導電通孔部分350a和導電焊盤部分350b通過導 電層350的導電跡線部分電連接。
雖然範例實施方案600C僅示出了單個導電層，但是本發明的範圍不限於此。例如，可以形成任何數目的導電層和/或介電層以建造多層信號分配結構。
一般來說，方塊5028可以包括形成導電層。因此，本發明的範圍不應受導電層(或圖案)的任何特定類型的特徵或形成導電層(或圖案)的任何方式的特徵限制。
範例方法5000可以在方塊5035處包括形成導電互連結構。方塊5035可以包括以任何各種方式形成一個或多個導電互連結構，在此提供所述各種方式的非限制性範例。
如本文中所論述，在方塊5028處形成的導電層可以包括在其上可以形成導電互連結構的導電焊盤部分。在導電焊盤部分上形成(或附著到導電焊盤部分)的導電互連結構可以是或包括任何各種不同類型的導電互連結構(例如，導電球或導電凸塊、焊料球或焊料凸塊、金屬柱或金屬樁、銅柱或銅樁、焊料加蓋柱或焊料加蓋樁、焊膠、導電黏合劑等)。在範例實施方案中，導電互連結構可以耦合到導電層的導電焊盤部分，所述導電焊盤部分又耦合到基板的導電圖案，所述導電圖案又耦合到另一導電互連結構，所述另一導電互連結構又耦合到半導體晶粒的接合墊。導電互連結構可以(例如)在指紋感測器裝置與另一電路(例如，主機板、柔性電路或其它線纜、多晶片模組的基板等)之間提供連接。
方塊5035可以(例如)包括以任何各種方式形成導電互連結構，在論述圖1的範例方法1000的方塊1010時提供了所述各種方式的非 限制性範例，但是本發明的範圍不限於此。此類導電互連結構可以(例如)是用於將半導體晶粒連接到基板的相同類型的導電互連結構，或可以是不同類型的導電互連結構。
示出方塊5035的各種方面的範例實施方案600D在圖6D處示出。範例實施方案600D(或組合件、子組合件、封裝等)包括在導電層350的導電焊盤部分350b上形成的導電互連結構360(例如，導電凸塊)。導電層的導電焊盤部分350b又耦合到基板120的導電圖案121，所述導電圖案又耦合到導電互連結構111，所述導電互連結構又耦合到半導體晶粒110。
一般來說，方塊5035可以包括形成導電互連結構。因此，本發明的範圍不應受導電互連結構的任何特定類型的特徵或形成導電互連結構的任何方式的特徵限制。
範例方法5000可以在方塊5040處包括形成防護層。方塊5040可以包括以任何各種方式形成防護層，在此提供所述各種方式的非限制性範例。方塊5040可以(例如)與圖3的範例方法3000的方塊3040和/或與圖1的範例方法1000的方塊1040共用任何或全部特徵。
防護層(或板)可以包括任何各種特徵。防護層可以(例如)防止基板(或半導體晶粒)受外部力和/或污染物(例如，歸因於手指按壓、滑動等)影響。防護層可以(例如)具有朝向基板的第一面或表面、背對基板的第二面或表面以及在第一面與第二面之間的週邊面或表面。防護層可以(例如)包括均勻的厚度層。防護層可以(例如)定位在基板的第二面上或跨所述第二面定位。防護層可以(例如)覆蓋基板的整個第二面。
防護層可以包括任何各種材料。例如，防護層可以是或包括氧化鋁(Al2O3)、其任何變體等。又例如，防護層可以是或包括聚合物。一般來說，防護層可以是或包括本文中揭示的各種介電材料中的任何一個或多個。防護層還可以(例如)與本文中關於圖1所論述的防護板和/或與本文中關於圖3所論述的防護層共用任何或全部特徵。
方塊5040可以包括以任何各種方式形成防護層。例如，方塊5040可以包括形成遮罩圖案以覆蓋除意圖由防護層覆蓋的區之外的區。方塊5040接著可(例如)包括將防護層材料塗覆到組合件的未被遮罩層覆蓋的部分(例如，基板的第二面的一部分或全部等)。在另一範例實施方案中，方塊5040可以包括利用選擇性印刷或不使用遮罩層的塗覆來塗覆防護層。在再一範例實施方案中，方塊5040可以包括形成防護層為跨至少基板的整個第二面的覆蓋層。在再一範例實施方案中，方塊5040可以包括塗覆和黏附防護層材料的預製板或薄膜。
例如，在其中防護層為或包括聚合物的範例實施方案中，方塊5040可以包括包覆聚合物(例如，利用本文中呈現的任何層形成工藝)且接著固化聚合物(例如，通過施加熱量、紫外輻射等)。又例如，在其中防護層包括氧化鋁(或類似物)層的範例實施方案中，方塊5040可以包括通過粒子衝擊(或機械衝擊)、熱噴塗、等離子體噴塗、超音速火焰(HVOF)噴塗等形成氧化鋁層。
示出方塊5040的各種方面的範例實施方案600E在圖6E處示出。範例實施方案600E(或組合件、子組合件、封裝等)包括防護層340。範例防護層340具有朝向基板120的第一面或表面、背對基板120的第二面 或表面以及在第一面與第二面之間的週邊面或表面。範例防護層340覆蓋基板120的整個第二面120b。範例防護層340的週邊面與基板120和囊封材料330的週邊面共面。
應注意，如同本文中所論述的全部方塊一樣，可以在晶片或面板級執行方塊5040。例如，方塊5040可以包括在同一程式中在多個指紋感測器裝置上形成防護層，其中後續可以單一化(或切離)此類裝置。
一般來說，方塊5040可以包括形成防護層。因此，本發明的範圍不應受防護層的任何特定類型的特徵或形成防護層的任何特定方式的特徵限制。
範例方法5000可以在方塊5095處包括必要時繼續製造(或處理)。方塊5095可以包括以任何各種方式繼續製造(或處理)，在此提供所述各種方式的非限制性範例。方塊5095可以(例如)與圖1的範例方法1000的方塊1095共用任何或全部特徵。如本文中所論述，在不脫離本發明的範圍的情況下，可以改變任何各種範例方法方塊和/或相關聯結構。例如，參考圖1中示出且本文中論述的範例方法1000，方塊1040包括附著防護板。關於圖1和2A-2E所論述的範例防護板不具有電路。然而，防護板可以包括電路。此類電路可以(例如)包括一個或多個導電層，一個或多個導電層包括跡線、墊片、焊盤等。此類導電層可以(例如)在防護板的外表面上和/或可以在防護板內部(例如，在分層或層合結構中)。此類電路還可以(例如)包括有源和/或無源電路元件。在範例實施方案中，此類電路還可以包括用以處理通過半導體晶粒感測的指紋相關資訊的處理電路。
在範例實施方案中，防護板的導電層和/或電元件可以利用 在防護板的導電層(例如，墊片、焊盤、跡線、圖案等)與基板的導電層(例如，墊片、焊盤、跡線、圖案等)之間延伸的一個或多個導電互連結構電耦合到基板。導電互連結構(或其形成)可以(例如)與本文中所論述的任何導電互連結構(或其形成)共用任何或全部特徵。導電互連結構(或多個導電互連結構)可以(例如)包括導電凸塊或導電球(例如，焊料凸塊或焊料球等)、金屬柱或金屬樁(例如，銅柱或銅樁)、導電凸塊或導電球的堆疊、銅芯焊料球等。導電互連結構可以(例如)定位在半導體晶粒的周界之外。例如，多個導電互連結構可以在任何數目的面(例如，四個面、兩個面、三個面、一個面等)上圍繞半導體晶粒。
示出修改後的方塊1040的各種方面的範例實施方案700在圖7處示出，圖7示出說明根據本發明的各種方面的範例實施方案700的截面視圖。範例實施方案700也可以稱為指紋感測器裝置400。
範例實施方案700(或組合件、子組合件、封裝等)可以與圖2E中示出且本文中論述的範例實施方案200E共用任何或全部特徵。一般來說，此論述將集中於此類範例實施方案之間的區別。
在範例實施方案700中，防護板440具有第一面440a(例如，頂面或頂表面)、第二面440b(例如，底面或底表面)以及在第一面440a與第二面440b之間的週邊面(例如，側面或側表面)。範例防護板440包括導電層442(例如，一個或多個跡線、墊片、焊盤、圖案、電子裝置、電子電路、邏輯電路、處理電路、指紋感測電極、接地跡線等)。導電層442可以位於防護板440的第一面440a和/或第二面440b處和/或在其之間。防護板440的導電層442利用導電互連結構441耦合到基板120的導電跡線121 和/或導電通孔122。通過回焊、電鍍、不使用回焊的直接金屬與金屬耦合、導電環氧樹脂、本文中所論述的任何接合技術等，導電互連結構441可以(例如)連接到防護板440的導電層442和/或連接到基板120的導電跡線121和/或導電通孔122。在範例實施方案中，多個導電互連結構441定位在半導體晶粒110的外周界周圍(例如，在半導體晶粒110的覆蓋面積之外)，圍繞半導體晶粒110的任何數目的面(例如，四個面、兩個面、三個面、一個面等)。
應注意，如圖7中所示，導電層442的位置在半導體晶粒110的感測區域112的覆蓋面積之外。然而，情況並不總是如此。例如，當導電層442輔助指紋感測活動時(例如，當導電層442包括指紋感測電極時，等)，導電層442的各種部分可以跨感測區域112定位。
防護板440的導電層442可以(例如)通過互連結構441、導電跡線121和互連結構111電連接到半導體晶粒110。導電層442還可以(例如)通過互連結構441、導電跡線121和導電通孔122連接到另一電路。
在範例實施方案700中，例如，如同範例實施方案200E和本文中所論述的其它範例實施方案一樣，指紋感測單元112可以(例如)通過半導體晶粒112、黏合層130和防護板440感測指紋。又應注意，作為導電層442的部分或以其它方式，防護板440可以包含通過互連結構441、導電跡線121和互連結構111電耦合到指紋感測單元112的指紋感測電極。
應注意，儘管示出防護板440通過黏合層130耦合到半導體晶粒110，並通過互連結構441和/或邊框150耦合到基板，但是可以省略此類耦合中的一個或多個。
作為其中在不脫離本發明的範圍的情況下可以改變一個或多個方法方塊和/或相關聯結構和/或可以添加或省略各種方法方塊的另一範例實施方案，可以在半導體晶粒與防護板(或防護層)之間放置插入件。例如，與圖7中示出且本文中論述的範例實施方案700相比，插入件可以包括本文中關於範例防護板所論述的電路(例如，所述電路替代防護板、除防護板外還包括電路等)。插入件接著可以如關於圖7的範例防護板所論述的相同方式附著到半導體晶粒和/或基板。防護板(例如，類似關於圖1、3、5、7所論述的防護板(或防護層)等)接著可跨插入件附著(或形成)。
插入件可以包括任何各種特徵。例如，插入件可以包括本文中關於基板120所論述的任何或全部特徵。
圖8示出範例實施方案800，圖8示出說明根據本發明的各種方面的範例實施方案800的橫截面圖。範例實施方案800也可以稱為指紋感測器裝置500。
範例實施方案800(或組合件、子組合件、封裝等)可以與圖2E中示出且本文中論述的範例實施方案200E、與圖4B中示出且本文中論述的範例實施方案400B、與圖7中示出且本文中論述的範例實施方案700等共用任何或全部特徵。一般來說，此論述將集中於此類範例實施方案之間的區別。
在範例實施方案800中，插入件560具有第一面560a(例如，頂面或頂表面)、第二面560b(例如，底面或底表面)以及在第一面560a與第二面560b之間的週邊面(例如，側面或側表面)。範例插入件560包括導電層562(例如，一個或多個跡線、墊片、焊盤、圖案、電子裝置、電子 電路、邏輯電路、處理電路、指紋感測電極、接地跡線等)。導電層562可以位於插入件560的第一面560a和/或第二面560b處和/或在其之間。插入件560的導電層562利用導電互連結構561耦合到基板120的導電跡線121和/或通孔122。通過回焊、電鍍、不使用回焊的直接金屬與金屬耦合、導電環氧樹脂、本文中所論述的任何接合技術等，導電互連結構561可以(例如)連接到插入件560的第一導電層562和/或連接到基板120的導電跡線121和/或通孔122。
應注意，如圖8中所示，導電層562的位置在半導體晶粒110的感測區域112的覆蓋面積之外。然而，情況並不總是如此。例如，當導電層562輔助指紋感測活動時(例如，當導電層562包括指紋感測電極時，等)，導電層562的各種部分可以跨感測區域112定位。
插入件560的導電層562可以(例如)通過互連結構561、導電跡線121和互連結構111電連接到半導體晶粒110。導電層562還可以(例如)通過互連結構561、導電跡線121和導電通孔122連接到另一電路。
例如，如關於範例方法1000的方塊1040所論述，防護板140接著可附著到插入件560的第一面560a(例如，頂面或頂表面)。可以(例如)利用黏合層(未示出)、利用邊框151提供的機械耦合、或任何各種耦合技術來執行此類附著。
在範例實施方案800中，指紋感測單元112可以(例如)通過半導體晶粒110、黏合層130、插入件560和防護板140感測指紋。又應注意，作為導電層562的部分或以其它方式，插入件560可以包含通過互連結構561、導電跡線121和互連結構111電耦合到指紋感測單元112的指紋 感測電極。
作為其中在不脫離本發明的範圍的情況下可以改變一個或多個方法方塊和/或相關聯結構和/或可以添加或省略各種方法方塊的另一範例實施方案，可以在本文中所揭示的任何或全部範例實施方案中倒轉半導體晶粒的定向。例如，與圖7中示出且本文中論述的範例實施方案700相比，可以倒轉半導體晶粒。因此，替代利用導電互連結構附著到基板以及利用黏合層附著到防護板，半導體晶粒可以利用黏合層附著到基板以及利用導電互連結構附著到防護板(或附著到圖8中示出的範例實施方案800的插入件)。
圖9示出範例實施方案900，圖9示出說明根據本發明的各種方面的範例實施方案900的橫截面圖。範例實施方案900也可以稱為指紋感測器裝置600。
範例實施方案900(或組合件、子組合件、封裝等)可以與圖2E中示出且本文中論述的範例實施方案200E、與圖7中示出且本文中論述的範例實施方案700等共用任何或全部特徵。一般來說，此論述將集中於此類範例實施方案之間的區別。
相對於範例實施方案200E、400B和700，在範例實施方案900中，半導體晶粒610安裝到基板120的第一面120a，其中背面610b向下且正面610a(例如，包含感測單元612(或感測區域)的面)向上。半導體晶粒610可以與本文中所論述的任何範例半導體晶粒(例如，半導體晶粒110等)共用任何或全部特徵。
黏合層630可以與本文中所論述任何黏合層(例如，黏合層 130等)共用任何或全部特徵。如圖9中所示，黏合層630的頂面黏附到半導體晶粒610的底面610b，並且黏合層630的底面黏附到基板120的頂面120a。在範例實施方案900中，在基板120的第一面120a與半導體晶粒610的第二面610b之間不存在直接電連接。然而，應注意，替代實施方案可以利用導電黏合層630用於向半導體晶粒610的接地信號傳遞，以改善熱傳遞等。在另一替代實施方案中，可以省略黏合層630。
如同圖7的範例實施方案700一樣，範例實施方案900包含防護板440，所述防護板包括導電層442(例如，一個或多個跡線、墊片、圖案或焊盤；電子裝置、電子電路、邏輯電路、處理電路、指紋感測電極、接地跡線等)。導電層442可以位於插入件防護板440的第一面440a和/或第二面440b處和/或在其之間。防護板440的導電層442利用導電互連結構441耦合到基板120的導電跡線121和/或導電通孔122。通過回焊、電鍍、不使用回焊的直接金屬與金屬耦合、導電環氧樹脂、本文中所論述的任何接合技術等，導電互連結構441可以(例如)連接到防護板440的導電層442和/或基板120的導電跡線121和/或導電通孔122。
在範例實施方案900中，半導體晶粒630(例如，其接合墊)利用一個或多個導電互連結構611耦合到防護板440的導電層442。導電互連結構611可以(例如)與本文中所論述導電互連結構111共用任何或全部特徵。
半導體晶粒610(例如，其接合墊)可以通過互連結構611、防護板440的導電層442和互連結構441電連接到基板120。半導體晶粒610還可以(例如)通過互連結構611、防護板440的導電層442、互連結構441、 導電跡線121和導電通孔122連接到另一電路。
應注意，儘管示出防護板440通過互連結構611耦合到半導體晶粒110，並通過互連結構441和/或邊框150耦合到基板，但是可以省略此類耦合中的一個或多個。例如，在其中防護板440是另一裝置(例如，其中集成指紋感測器裝置600的消費型電子裝置的板的範例實施方案中，防護板440可能是較大板(例如，視窗、塗層、顯示幕幕等)的一部分。在此實施方案中，可以省略或重新配置邊框150(例如，重新配置為不延伸高於防護板440的底面440b)，因為防護板440的頂表面440a和/或側表面可能無法接近指紋感測器裝置600。
在範例實施方案900中，指紋感測單元612可以(例如)通過防護板440、通過指紋感測單元612之間的空隙(例如，如果存在此類空隙，且是否用黏合材料或底部填充膠填充此類空隙)等感測指紋。又應注意，作為導電層442的部分或以其它方式，防護板440可以包含通過互連結構611電耦合到指紋感測單元112的指紋感測電極。
本文中的論述包含示出電子裝置(例如，指紋感測器裝置)的各種部分及其製造方法的許多示意圖。為了清楚地示意，這些圖並未示出每個範例組合件的所有方面。本文中提供的任何範例組合件和/或方法可以與本文中提供的任何或全部其它組合件和/或方法共用任何或全部特徵。
綜上所述，本發明的各種方面提供一種指紋感測器裝置和一種製作指紋感測器裝置的方法。作為非限制性範例，本發明的各種方面提供各種指紋感測器裝置及其製造方法，所述指紋感測器裝置包括在晶粒的底面上的感測區域，其不具有從頂面感測指紋的頂面電極，和/或所述指紋 感測器裝置包括直接電連接到板(通過所述板感測指紋)的導電元件的感測器晶粒。雖然已經參考某些方面和範例描述了以上內容，但是所屬領域的技術人員應理解，在不脫離本發明的範圍的情況下，可以進行各種修改並可以替代等效物。另外，在不脫離本發明的範圍的情況下，可以進行許多修改以使特定情況或材料適應本發明的教示內容。因此，希望本發明不限於所揭示的特定範例，而是本發明將包含落入所附申請專利範圍的範圍內的所有範例。
1000‧‧‧範例方法
1005-1095‧‧‧方塊

Claims (15)

  1. 一種指紋感測器裝置，其包括：基板，所述基板具有基板頂面、基板底面以及在所述基板頂面與所述基板底面之間的基板側面；半導體晶粒，所述半導體晶粒具有晶粒頂面、面向並且耦接到所述基板頂面的晶粒底面以及在所述晶粒頂面與所述晶粒底面之間的晶粒側面，其中所述晶粒底面包括感測區域，所述感測區域包括指紋感測單元；多個第一互連結構，所述多個第一互連結構將所述晶粒底面電連接到所述基板頂面；以及在所述晶粒頂面上的防護板，通過所述防護板感測指紋，所述防護板具有板頂面、板底面以及在所述板頂面與所述板底面之間的板側面。
  2. 根據申請專利範圍第1項所述的指紋感測器裝置，其中所述指紋感測單元包括指紋感測電路。
  3. 根據申請專利範圍第1項所述的指紋感測器裝置，其中所述感測區域在所述晶粒底面的中心區域中，並且所述多個第一互連結構定位在所述感測區域的至少兩個橫向相對邊之外。
  4. 根據申請專利範圍第1項所述的指紋感測器裝置，其包括黏附到所述晶粒頂面並黏附到所述板底面的黏合層。
  5. 根據申請專利範圍第4項所述的指紋感測器裝置，其中所述黏合層完全覆蓋所述晶粒頂面。
  6. 根據申請專利範圍第1項所述的指紋感測器裝置，其中所述指紋感測器裝置的指紋感測電極均不在所述半導體晶粒的所述感測區域正上方。
  7. 根據申請專利範圍第1項所述的指紋感測器裝置，其包括在所述半導體晶粒正上方的指紋感測電極。
  8. 根據申請專利範圍第1項所述的指紋感測器裝置，其中所述防護板包括玻璃。
  9. 根據申請專利範圍第1項所述的指紋感測器裝置，其包括在所述晶粒頂面與所述防護板之間的插入件，其中所述插入件包括夾在介電層之間的多個指紋感測電極。
  10. 根據申請專利範圍第9項所述的指紋感測器裝置，其包括多個第二互連結構，所述多個第二互連結構耦合到所述插入件的底面並耦合到所述半導體晶粒的覆蓋面積之外的所述基板頂面，並且其中所述多個指紋感測電極中的每一個電連接到所述第二互連結構中的相應一個。
  11. 一種指紋感測器裝置，其包括：基板，所述基板具有基板頂面、基板底面以及在所述基板頂面與所述基板底面之間的基板側面；半導體晶粒，所述半導體晶粒具有晶粒頂面、晶粒底面以及在所述晶粒頂面與所述晶粒底面之間的晶粒側面，其中所述晶粒底面包括感測區域，所述感測區域包括指紋感測電路；多個第一互連結構，所述多個第一互連結構將所述晶粒底面電連接到所述基板頂面；圍繞所述晶粒側面的主體；以及在所述晶粒頂面上的防護層，通過所述防護層感測指紋，所述防護層具有防護層頂面、防護層底面以及在所述防護層頂面與所述防護層底面之 間的防護層側面。
  12. 根據申請專利範圍第11項所述的指紋感測器裝置，其中所述主體是直接耦接到所述防護層。
  13. 根據申請專利範圍第11項所述的指紋感測器裝置，其中所述防護層橫向地寬於所述半導體晶粒並且橫向地窄於所述主體。
  14. 根據申請專利範圍第11項所述的指紋感測器裝置，其中所述主體包含邊框。
  15. 根據申請專利範圍第11項所述的指紋感測器裝置，其中所述防護層的周圍直接接觸所述本體。
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TW202005005A (zh) 2020-01-16
CN115117106A (zh) 2022-09-27
US20170243798A1 (en) 2017-08-24
US20160335470A1 (en) 2016-11-17
KR20160133187A (ko) 2016-11-22
TW201644013A (zh) 2016-12-16
US20230009679A1 (en) 2023-01-12
US10297515B2 (en) 2019-05-21
KR101942141B1 (ko) 2019-01-24
TWI755640B (zh) 2022-02-21
CN205984935U (zh) 2017-02-22
US10446455B2 (en) 2019-10-15
US11393734B2 (en) 2022-07-19

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