KR20160133187A - 지문센서 패키지 - Google Patents

지문센서 패키지 Download PDF

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Publication number
KR20160133187A
KR20160133187A KR1020150065900A KR20150065900A KR20160133187A KR 20160133187 A KR20160133187 A KR 20160133187A KR 1020150065900 A KR1020150065900 A KR 1020150065900A KR 20150065900 A KR20150065900 A KR 20150065900A KR 20160133187 A KR20160133187 A KR 20160133187A
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South Korea
Prior art keywords
semiconductor die
substrate
conductive
fingerprint
fingerprint sensing
Prior art date
Application number
KR1020150065900A
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English (en)
Other versions
KR101942141B1 (ko
Inventor
박성순
정지영
Original Assignee
앰코 테크놀로지 코리아 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 앰코 테크놀로지 코리아 주식회사 filed Critical 앰코 테크놀로지 코리아 주식회사
Priority to KR1020150065900A priority Critical patent/KR101942141B1/ko
Priority to US15/131,967 priority patent/US10297515B2/en
Priority to CN201911035681.4A priority patent/CN110739275A/zh
Priority to TW111103751A priority patent/TW202220117A/zh
Priority to CN201620428887.9U priority patent/CN205984935U/zh
Priority to CN201610313065.0A priority patent/CN106158760A/zh
Priority to TW105114694A priority patent/TWI711125B/zh
Priority to CN202210825314.XA priority patent/CN115117106A/zh
Priority to TW108137857A priority patent/TWI755640B/zh
Publication of KR20160133187A publication Critical patent/KR20160133187A/ko
Priority to US15/591,416 priority patent/US10446455B2/en
Application granted granted Critical
Publication of KR101942141B1 publication Critical patent/KR101942141B1/ko
Priority to US16/601,928 priority patent/US11393734B2/en
Priority to US17/867,287 priority patent/US11990435B2/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
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    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
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Abstract

본 발명은 지문센서 패키지에 관한 것으로, 해결하고자 하는 기술적 과제는 도전성 범프와 지문센싱부가 반도체 다이의 일면에 구비되고, 타면에 구비된 보호판이나 보호막에 지문이 인접할 경우, 정전용량 변화를 통해 지문을 센싱할 수 있고, 지문센싱부가 구비된 반도체 다이가 기판에 플립칩 타입으로 안착되므로, 공정을 간소화하는데 있다.

Description

지문센서 패키지{PACKAGE OF FINGER PRINT SENSOR}
본 발명은 지문센서 패키지에 관한 것이다.
최근, 보안 및 기밀 유지를 위한 산업체 및 연구소를 비롯하여, 일반 가정 및 아파트 등의 출입통제, 금융권의 ATM 및 모바일 폰 등에서는 신원 확인을 위해 생체인식에 의한 인증기술이 적용되고 있다.
보안 인증을 위한 생체인식의 종류로서, 사람마다 서로 다른 지문, 홍채, 목소리, 얼굴, 혈관 등을 사용하고 있지만, 그 중에서도 지문 센싱은 편의성이나 보안성 등 여러 가지 이유로 현재 가장 많이 상용화되어 있다.
일반적인 지문센서 패키지의 경우, 반도체 다이의 일면의 중심부에 지문센서가 구비되고, 외측에 구비된 본드 패드가 와이어 본딩에 의해 기판과 접속되며, 지문센서 및 본드패드를 덮도록 윈도우가 장착될 수 있다. 이와 같은 지문센서 패키지는 반도체 다이의 동일면에 접착된 윈도우와 본딩된 도전성 와이어 사이의 간섭을 방지하기 위해서, 본드 패드가 구비될 영역에 별도의 에칭홈 형성을 위한 공정이 요구된다.
본 발명은 상술한 종래의 문제점을 극복하기 위한 것으로서, 본 발명의 목적은 도전성 범프와 지문센싱부가 반도체 다이의 일면에 구비되고, 타면에 구비된 보호판이나 보호막에 지문이 인접할 경우, 정전용량 변화를 통해 지문을 센싱할 수 있는 지문센서 패키지를 제공하는데 있다.
또한, 본 발명의 다른 목적은 지문센싱부가 구비된 반도체 다이가 기판에 플립칩 타입으로 안착되므로, 공정을 간소화할 수 있는 지문센서 패키지를 제공하는데 있다.
상기한 목적을 달성하기 위해 본 발명에 의한 지문센서 패키지는 제1면과, 제1면의 반대면인 제2면을 갖는 판형상의 기판과, 평평한 제1면과, 제1면의 반대면인 제2면을 갖고, 상기 제2면에 상기 기판과 전기적으로 접속된 다수의 도전성 범프와, 지문센싱부가 구비된 반도체 다이와, 상기 반도체 다이의 제1면에 안착된 보호판 및, 상기 보호판을 상기 기판에 고정하는 베젤을 포함할 수 있다.
상기 반도체 다이는 상기 기판의 제1면과 상기 보호판의 사이에 개재되고, 상기 지문센싱부가 상기 반도체 다이의 제2면 중심에 구비되고, 상기 다수의 도전성 범프가 상기 지문센싱부의 외주연으로부터 이격되도록 배치될 수 있다.
상기 보호판은 상기 반도체 다이의 평평한 제1면에 비도전성 접착제를 통해 접착될 수 있다.
상기 기판은 다수의 도전성 패턴이 구비된 판 형상의 회로 기판으로, 상기 제1면으로 노출된 상기 도전성 패턴이 상기 반도체 다이의 상기 도전성 범프와 전기적으로 접속될 수 있다.
상기 반도체 다이의 상기 지문센싱부는 정전용량 변화를 통해 지문을 센싱할 수 있다.
또한 본 발명에 의한 지문센서 패키지는 제1면과, 제1면의 반대면인 제2면을 갖는 판형상의 기판과, 평평한 제1면과 제1면의 반대면인 제2면을 갖고, 상기 제2면에 상기 기판과 전기적으로 접속된 다수의 도전성 범프와, 지문센싱부가 구비된 반도체 다이와, 상기 반도체 다이의 측부를 감싸는 절연 몰드 및, 상기 반도체 다이의 상기 제1면에 코팅된 보호막을 포함할 수 있다.
상기 반도체 다이는 상기 기판의 제1면과 상기 보호막 사이에 개재되고, 상기 지문센싱부가 상기 반도체 다이의 제2면 중심에 구비되고, 상기 다수의 도전성 범프가 상기 지문센싱부의 외주연으로부터 이격되도록 배치될 수 있다.
상기 기판은 다수의 도전성 패턴이 구비된 판 형상의 회로 기판으로, 상기 제1면으로 노출된 상기 도전성 패턴이 상기 반도체 다이의 상기 도전성 범프와 전기적으로 접속될 수 있다.
상기 반도체 다이의 상기 지문센싱부는 정전용량 변화를 통해 지문을 센싱할 수 있다.
상기 보호막은 상기 반도체 다이의 제1면을 모두 덮고, 연장되어 상기 절연 몰드의 제1면도 덮을 수 있다.
또한 본 발명에 의한 지문센서 패키지는제1면과, 제1면의 반대면인 제2면을 갖는 판형상의 기판과, 평평한 제1면과, 제1면의 반대면인 제2면을 갖고, 상기 제2면에 상기 기판과 전기적으로 접속된 다수의 도전성 범프와, 지문센싱부가 구비된 반도체 다이와, 상기 기판의 제1면, 반도체 다이의 측부 및 제1면을 감싸는 절연 몰드 및, 상기 기판의 제2면에 코팅된 보호막을 포함할 수 있다.
상기 기판은 다수의 도전성 패턴이 구비된 판 형상의 회로 기판으로, 제1면으로 노출된 상기 도전성 패턴이 상기 반도체 다이의 상기 도전성 범프와 전기적으로 접속될 수 있다.
상기 절연 몰드는 제1면과 제2면 사이를 관통하는 관통홀을 구비하고, 상기 관통홀을 통해 상기 기판의 제1면에 구비된 상기 다수의 도전성 패턴 중 적어도 하나를 외부로 노출시킬 수 있다.
상기 절연 몰드를 통해 외부로 노출된 상기 도전성 패턴과 전기적으로 접속된 재배선층을 더 포함할 수 있다.
상기 재배선층은 상기 관통홀의 내벽과 상기 절연 몰드의 제1면을 따라 일부 연장될 수 있다.
상기 절연 몰드의 제1면에 형성된 상기 재배선층에 접속되도록 형성된 외부 도전성 범프를 더 포함할 수 있다.
상기 반도체 다이의 상기 지문센싱부는 정전용량 변화를 통해 지문을 센싱할 수 있다.
본 발명에 의한 지문센서 패키지는 도전성 범프와 지문센싱부가 반도체 다이의 일면에 구비되고, 타면에 구비된 보호판이나 보호막에 지문이 인접할 경우, 정전용량 변화를 통해 지문을 센싱할 수 있게 된다.
또한 본 발명에 의한 지문센서 패키지는 지문센싱부가 구비된 반도체 다이가 기판에 플립칩 타입으로 안착되므로, 공정을 간소화 할 수 있다.
도 1은 본 발명의 일실시예에 따른 지문센서 패키지의 제조 방법을 도시한 순서도이다.
도 2a 내지 도 2e는 도 1의 지문센서 패키지의 제조 방법의 각 단계에 대한 단면도이다.
도 3은 본 발명의 다른 실시예에 따른 지문센서 패키지의 제조 방법을 도시한 순서도이다.
도 4a 내지 도 4b는 도 3의 지문센서 패키지의 제조 방법의 각 단계에 대한 단면도이다.
도 5는 본 발명의 다른 실시예에 따른 지문센서 패키지의 제조 방법을 도시한 순서도이다.
도 6a 내지 도 6e는 도 5의 지문센서 패키지의 제조 방법의 각 단계에 대한 단면도이다.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 본 발명의 실시예들은 당해 기술 분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위하여 제공되는 것이며, 하기 실시예는 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다. 오히려, 이들 실시예는 본 개시를 더욱 충실하고 완전하게 하고, 당업자에게 본 발명의 사상을 완전하게 전달하기 위하여 제공되는 것이다.
또한, 이하의 도면에서 각 층의 두께나 크기는 설명의 편의 및 명확성을 위하여 과장된 것이며, 도면상에서 동일 부호는 동일한 요소를 지칭한다. 본 명세서에서 사용된 바와 같이, 용어 "및/또는"은 해당 열거된 항목 중 어느 하나 및 하나 이상의 모든 조합을 포함한다.
본 명세서에서 사용된 용어는 특정 실시예를 설명하기 위하여 사용되며, 본 발명을 제한하기 위한 것이 아니다. 본 명세서에서 사용된 바와 같이, 단수 형태는 문맥상 다른 경우를 분명히 지적하는 것이 아니라면, 복수의 형태를 포함할 수 있다. 또한, 본 명세서에서 사용되는 경우 "포함한다(comprise)" 및/또는 "포함하는(comprising)"은 언급한 형상들, 숫자, 단계, 동작, 부재, 요소 및/또는 이들 그룹의 존재를 특정하는 것이며, 하나 이상의 다른 형상, 숫자, 동작, 부재, 요소 및 /또는 그룹들의 존재 또는 부가를 배제하는 것이 아니다.
본 명세서에서 제1, 제2 등의 용어가 다양한 부재, 부품, 영역, 층들 및/또는 부분들을 설명하기 위하여 사용되지만, 이들 부재, 부품, 영역, 층들 및/또는 부분들은 이들 용어에 의해 한정되어서는 안 됨은 자명하다. 이들 용어는 하나의 부재, 부품, 영역, 층 또는 부분을 다른 영역, 층 또는 부분과 구별하기 위하여만 사용된다. 따라서, 이하 상술할 제1부재, 부품, 영역, 층 또는 부분은 본 발명의 가르침으로부터 벗어나지 않고서도 제2부재, 부품, 영역, 층 또는 부분을 지칭할 수 있다.
본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명을 용이하게 실시할 수 있을 정도로 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세하게 설명하면 다음과 같다.
도 1을 참조하면, 본 발명의 일실시예에 따른 지문센서 패키지의 제조 방법을 도시한 순서도가 도시되어 있다.
도 1에서 도시된 바와 같이 지문센서 패키지의 제조 방법은 반도체다이 준비 단계(S1), 반도체다이 실장 단계(S2), 접착층 형성 단계(S3), 보호판 어태치 단계(S4) 및 배젤 고정 단계(S5)를 포함한다.
도 2a 내지 도 2e를 참조하면, 도 1의 지문센서 패키지의 제조방법의 각 단계에 대한 단면도가 도시되어 있다. 이하에서는 도 1의 지문센서 패키지의 제조 방법을 도 2a 내지 도 2e를 참조하여 설명하고자 한다.
우선 도 2a를 참조하면, 반도체다이 준비 단계(S1)에 대한 단면도가 도시되어 있다. 상기 반도체다이 준비 단계(S1)에서는 평평한 제1면(110a)과 제1면(110a)의 반대면인 평평한 제2면(110b)을 가지며, 제2면(110b)에 다수의 도전성 범프(111)와, 지문센싱부(112)가 구비된 반도체다이(110)를 준비한다. 상기 반도체다이(110)는 지문센싱부(112)가 제2면의 중심에 위치하고, 다수의 도전성 범프(111)가 지문센싱부(112)의 외주연으로부터 이격되도록 형성될 수 있다. 상기 반도체다이(110)는 제1면(110a)과 제2면(110b)사이의 거리인 높이가 50 내지 150㎛이 되도록, 제1면(110a)을 그라인딩하여 준비된다. 상기 반도체다이(110)의 높이가 150㎛ 이상일 경우, 지문센싱부(112)에서 지문을 센싱하기 어려울 수 있다. 또한 그라인딩된 반도체다이(110)의 제1면(110a)은 별도의 단차가 구비되지 않은 평평한 면일 수 있다.
상기 도전성 범프(111)는 도전성 필러, 카파 필러, 도전성볼, 솔더볼 또는 카파볼로 이루어질 수 있으나, 본 발명에서 이를 한정하는 것은 아니다. 상기 지문센싱부(112)는 정전용량 변화를 측정하여, 지문을 센싱할 수 있다.
상기 도 2b를 참조하면, 반도체다이 실장 단계(S2)에 대한 단면도가 도시되어 있다. 상기 반도체다이 실장 단계(S2)에서는 다수의 도전성 패턴(121)이 구비된 기판(120)과 전기적으로 접속되도록 반도체다이(110)를 기판(120)의 제1면(120a)에 실장 시킨다. 상기 반도체다이(110)는 도전성 범프(111)가 기판(120)의 도전성 패턴(121)과 전기적으로 접속될 수 있다. 상기 반도체다이(110)는 플립칩 본딩(Flip chip bonding), TC(temperature compression) 본딩, 또는 TCNCP(temperature compression non-conductive paste) 본딩 공법을 통해 기판(120)의 도전성 패턴(121)에 실장될 수 있다. 상기 기판(120)은 판형상으로 제1면(120a)과 제2면(120b)에 다수의 배선 패턴인 도전성 패턴(121)이 각각 구비되고, 제1면(120a)과 제2면(120b) 사이를 관통하여 제1면(120a)과 제2면(120b)에 구비된 도전성 패턴(121) 사이를 전기적으로 연결하는 도전성 비아(122)가 구비된 인쇄 회로 기판(Printed circuit board)일 수 있다.
상기 도 2c를 참조하면, 접착층 형성 단계(S3)에 대한 단면도가 도시되어 있다. 상기 접착층 형성 단계(S3)에서는 반도체다이(110)의 평평한 제1면(110a)에 접착층(130)을 형성한다. 상기 접착층(130)은 반도체다이(110)의 평평한 제1면(110a)을 모두 덮도록 균일한 두께로 형성된 비도전성 접착제일 수 있다. 상기 접착층(130)은 자체 접착력에 의해서, 상기 반도체다이(110)의 제1면(110a)에 용이하게 접착될 수 있다. 상기 접착층(130)은 포토리소그래피, 스크린 인쇄, 스퀴이징 (squeegeeing) 및 디스펜싱 공정 중 어느 하나로 형성될 수 있으나, 본 발명에서 이를 한정하는 것은 아니다.
상기 도 2d를 참조하면, 보호판 어태치 단계(S4)에 대한 단면도가 도시되어 있다. 상기 보호판 어태치 단계(S4)에서는 반도체다이(110)의 제1면(110a)에 형성된 접착층(130)을 덮도록 보호판(140)을 접착층(130)에 어태치 시킨다. 이때 접착층(130)은 반도체다이(110)의 제1면(110a)과 보호판(140) 사이에 개재되어, 자체 접착력으로 보호판(140)의 제2면(140b)을 반도체다이(110)의 제1면(110a)에 접착시킨다. 상기 보호판(140)은 제1면(140a)과 제2면(140b)이 정전용량 방식에 의한 지문 인식이 용이하도록, 평평한 평면일 수 있다. 상기 보호판(140)은 제1면(140a)과 제2면(140b)이 반도체다이(110)의 제1면(110a) 보다 더 클 수 있으나, 본 발명에서 이를 한정하는 것은 아니다.
상기 보호판(140)은 사파이어, 글래스, 강화 글래스, 플라스틱, PC(Polycarbonate)계열 및 PI(Polyamide)계열 중 선택된 적어도 하나로 이루어질 수 있으나, 본 발명에서 이를 한정하는 것은 아니다.
상기 도 2e를 참조하면, 배젤 고정 단계(S5)에 대한 단면도가 도시되어 있다. 상기 배젤 고정 단계(S5)에서는 보호판(140)이 안착된 반도체다이(110)를 감싸도록 배젤(150)을 기판(120)에 고정시킨다. 상기 배젤(150)은 보호판(140)의 제1면(140a)을 외부로 노출시킬 수 있다. 상기 배젤(150)은 본체부(151), 고정부(152) 및 접착부(153)를 포함할 수 있다. 상기 본체부(151)는 반도체다이(110)의 측부로부터 외부 방향으로 일부 이격된 상태에서, 상기 반도체다이(110)의 측부를 감쌀 수 있다. 상기 고정부(152)는 상기 본체부(151)의 일측 끝단으로부터, 보호판(140)의 중심 방향으로 일부 돌출되어, 상기 보호판(140)을 고정할 수 있다. 상기 접착부(153)는 본체부(151)의 타측 끝단으로, 기판(120)의 제1면(120a)에 접착되어 고정될 수 있다. 즉, 기판(120)에 접착된 배젤(150)은 반도체다이(110)의 제1면(110a)에 접착층(130)에 의해 접착된 보호판(140)을 고정할 수 있다.
이와 같이 형성된 지문센서 패키지(100)는 제2면(110b)에 다수의 도전성 범프(111)와 지문센싱부(112)가 구비된 반도체다이(110)의 제1면(110a)에 접착된 보호판(140)에 지문이 인접할 경우 정전용량 변화를 통해 지문을 센싱할 수 있다. 이와 같은 지문센서 패키지(100)는 기판(120)의 도전성 패턴(121)에 전기적으로 접속된 연성회로기판(미도시)을 더 구비할 수 있으며, 상기 연성회로기판은 지문센서 패키지(100)의 출력패드로, 외부 기판 또는 전자기기와 전기적으로 접속될 수 있다. 또한 지문센서 패키지(100)는 반도체다이(110)가 기판(120)에 플립칩 타입으로 안착되므로 공정을 간소화 할 수 있다.
도 3을 참조하면, 본 발명의 다른 실시예에 따른 지문센서 패키지의 제조 방법을 도시한 순서도가 도시되어 있다.
도 3에서 도시된 바와 같이 지문센서 패키지의 제조 방법은 반도체다이 준비 단계(S1), 반도체다이 실장 단계(S2), 몰딩 단계(S3a) 및 보호막 코팅 단계(S4a)를 포함한다. 도 3에 도시된 지문센서 패키지의 제조 방법은 반도체다이 준비 단계(S1) 및 반도체다이 실장 단계(S2)가 도 1 및, 도 2a 내지 도 2b에 도시된 지문센서 패키지의 제조 방법과 동일하다. 이하에서는 도 1 및, 도 2a 내지 도 2e에 도시된 지문센서 패키지의 제조 방법과 상이한 몰딩 단계(S3a) 및 보호막 코팅 단계(S4a)를 위주로 설명하고자 한다.
또한 도 4a 내지 도 4b를 참조하면, 도 3의 지문센서 패키지의 제조방법의 몰딩 단계(S3a) 및 보호막 코팅 단계(S4a)에 대한 단면도가 도시되어 있다. 이하에서는 도 3의 지문센서 패키지의 제조 방법을 도 4a 내지 도 4b를 참조하여 설명하고자 한다.
도 4a를 참조하면, 몰딩 단계(S3a)에 대한 단면도가 도시되어 있다. 상기 몰딩 단계(S3a)에서는 기판(120)의 제1면(120a)과, 반도체다이(110)를 덮도록 절연 몰드(230)를 형성한다. 이때 반도체다이(110)의 제1면(110a)은 절연 몰드(230)를 통해 외부로 노출될 수 있다. 즉, 절연 몰드(230)는 기판(120)의 제1면(120a)과 반도체다이(110)의 측부를 감싸도록 형성될 수 있다. 또한 반도체다이(110)의 제1면(110a)와 절연 몰드(230)의 제1면(230a)은 동일 평면상에 위치할 수 있다. 상기 절연 몰드(230)는 폴리이미드(PolyImide, PI), BCB(Benzo Cyclo Butene), PBO(Poly Benz Oxazole), BT(BismaleimideTriazine), 페놀 수지(phenolic resin) 등으로 구성될 수도 있으나, 상기 재질로 본 발명의 내용을 한정하는 것은 아니다.
도 4b를 참조하면, 보호막 코팅 단계(S4a)에 대한 단면도가 도시되어 있다. 상기 보호막 코팅 단계(S4a)에서는 몰딩 단계(S3a)에서 외부로 노출된 반도체다이(110)의 제1면(110a)을 덮도록 보호막(240)을 코팅한다. 상기 보호막(240)은 상기 반도체다이(110)의 제1면(110a)과, 상기 절연 몰드(230)의 제1면(230a)을 일부 덮도록 코팅될 수 있다. 이 경우 보호막(240)이 형성될 이외의 영역을 덮도록 마스크 패턴(미도시)을 형성한 후, 마스크 패턴을 통해 외부로 노출된 반도체다이(110)의 제1면(110a)과 절연 몰드(230)의 제1면(230a)을 덮도록 코팅될 수 있다. 또한 보호막(240)은 반도체다이(110)의 제1면(110a)과 절연 몰드(230)의 제1면(230a)을 모두 덮도록 코팅될 수도 있다. 상기 보호막(240)은 지문의 센싱이 이루어질 때 손가락이 직접적으로 접촉되는 부분이다.
상기 보호막(240)은 알루미나 또는 폴리머를 포함하여 이루어질 수 있다. 상기 보호막(240)이 폴리머로 이루어질 경우, 코팅된 후에 열 또는 자외선에 의해서 경화될 수 있다. 상기 보호막(240)이 알루미나로 이루어질 경우, 알루미나 입자가 기계적 충격에 의해서 반도체다이(110)의 제1면(110a)에 코팅될 수 있다.
이와 같이 형성된 지문센서 패키지(200)는 제2면(110b)에 다수의 도전성 범프(111)와 지문센싱부(112)가 구비된 반도체다이(110)의 상부에 코팅된 보호막(240)에 지문이 인접할 경우 정전용량 변화를 측정하여, 지문을 측정할 수 있다. 이와 같은 지문센서 패키지(200)는 기판(120)의 도전성 패턴(121)에 전기적으로 접속된 연성회로기판(미도시)을 더 구비할 수 있으며, 연성회로기판은 지문센서 패키지(200)의 출력패드로, 외부 기판 또는 전자기기와 전기적으로 접속될 수 있다. 또한 지문센서 패키지(200)는 반도체다이(110)가 기판(120)에 플립칩 타입으로 안착되므로 공정을 간소화 할 수 있다.
도 5를 참조하면, 본 발명의 다른 실시예에 따른 지문센서 패키지의 제조 방법을 도시한 순서도가 도시되어 있다.
도 5에서 도시된 바와 같이 지문센서 패키지의 제조 방법은 반도체다이 준비 단계(S1), 반도체다이 실장 단계(S2), 몰딩 단계(S3b), 관통홀 형성 단계(S4b), 재배선층 형성 단계(S5b), 외부 도전성 범프 형성 단계(S6b) 및 보호막 코팅 단계(S7b)를 포함한다. 도 5에 도시된 지문센서 패키지의 제조 방법은 반도체다이 준비 단계(S1), 반도체다이 실장 단계(S2)가 도 1 및, 도 2a 내지 도 2b에 도시된 지문센서 패키지의 제조 방법과 동일하다. 이하에서는 도 1 및, 도 2a 내지 도 2e에 도시된 지문센서 패키지의 제조 방법과 상이한 몰딩 단계(S3b), 관통홀 형성 단계(S4b), 재배선층 형성 단계(S5b), 외부 도전성 범프 형성 단계(S6b) 및 보호막 코팅 단계(S7b)를 위주로 설명하고자 한다.
또한 도 6a 내지 도 6f를 참조하면, 도 5의 지문센서 패키지의 제조방법의 몰딩 단계(S3b), 관통홀 형성 단계(S4b), 재배선층 형성 단계(S5b), 외부 도전성 범프 형성 단계(S6b) 및 보호막 코팅 단계(S7b)에 대한 단면도가 도시되어 있다. 이하에서는 도 5의 지문센서 패키지의 제조 방법을 도 6a 내지 도 6e를 참조하여 설명하고자 한다.
도 6a를 참조하면, 몰딩 단계(S3b)에 대한 단면도가 도시되어 있다. 상기 몰딩 단계(S3b)에서는 기판(120)의 제1면(120a)과, 반도체다이(110)를 모두 덮도록 절연 몰드(330)를 형성한다. 즉, 절연 몰드(330)는 기판(120)의 제1면(120a)과 반도체다이(110)의 측부 및 제1면(110a)을 모두 덮도록 형성될 수 있다. 상기 절연 몰드(330)는 기판(120)의 제1면(120a)과 접촉된 제2면(330b)과 반대면으로 외부로 노출된 제1면(330a)을 갖는다. 상기 절연 몰드(330)는 폴리이미드(PolyImide, PI), BCB(Benzo Cyclo Butene), PBO(Poly Benz Oxazole), BT(BismaleimideTriazine), 페놀 수지(phenolic resin) 등으로 구성될 수도 있으나, 상기 재질로 본 발명의 내용을 한정하는 것은 아니다.
도 6b를 참조하면, 관통홀 형성 단계(S4b)에 대한 단면도가 도시되어 있다. 상기 관통홀 형성 단계(S4b)에서는 절연 몰드(330)의 제1면(330a)과 제2면(330b)사이를 관통하는 관통홀(331)을 형성하여, 기판(120)의 제1면(110a)에 구비된 도전성 패턴(121)을 외부로 노출시킨다. 상기 절연 몰드(330)의 관통홀(331)은 레이저 또는 플라즈마 에칭을 통해 형성할 수 있으나, 본 발명에서 이를 한정하는 것은 아니다.
도 6c를 참조하면, 재배선층 형성 단계(S5b)에 대한 단면도가 도시되어 있다. 상기 재배선층 형성 단계(S5b)에서는 관통홀 형성 단계(S4b)에서 외부로 노출된 도전성 패턴(121)과 전기적으로 접속되도록 재배선층(350)을 형성한다. 상기 도전성 패턴(121)과 접속된 재배선층(350)은 관통홀(331)의 내벽과, 절연 몰드(330)의 제1면(330a)을 따라 연장되도록 형성될 수 있다. 즉, 절연 몰드(330)의 제1면(330a)에 형성된 재배선층(350)은 관통홀(331)의 내벽과 도전성 패턴(121)을 덮도록 형성됨으로써, 관통홀 형성 단계(S4b)에서 외부로 노출된 도전성 패턴(121)과 전기적으로 접속된다. 상기 재배선층(350)은 통상적으로 구리가 사용되나, 상기 재질로 본 발명의 내용을 한정하는 것은 아니다.
도 6d를 참조하면, 외부 도전성 범프 형성 단계(S6b) 에 대한 단면도가 도시되어 있다. 상기 외부 도전성 범프 형성 단계(S6b) 에서는 절연 몰드(330)의 제1면(330a)으로 연장된 재배선층(350)에 외부 도전성 범프(360)를 형성한다. 상기 외부 도전성 범프(360)는 도전성 필러, 카파 필러, 도전성볼, 솔더볼 또는 카파볼로 이루어질 수 있으나, 본 발명에서 이를 한정하는 것은 아니다. 상기 외부 도전성 범프(360)는 지문센서 패키지(300)를 외부 보드에 실장하기 위한 출력 패드일 수 있다.
도 6e를 참조하면, 보호막 코팅 단계(S7b)에 대한 단면도가 도시되어 있다. 상기 보호막 코팅 단계(S7b)에서는 기판(120)의 제2면(120b)을 덮도록 보호막(340)을 코팅한다. 상기 보호막(340)은 지문의 센싱이 이루어질 때 손가락이 직접적으로 접촉되는 부분이다. 상기 보호막(340)은 알루미나 또는 폴리머를 포함하여 이루어질 수 있다. 상기 보호막(340)이 폴리머로 이루어질 경우, 코팅된 후에 열 또는 자외선에 의해서 경화될 수 있다. 상기 보호막(340)이 알루미나로 이루어질 경우, 알루미나 입자가 기계적 충격에 의해서 기판(120)의 제2면(120b)에 코팅될 수 있다.
이와 같이 형성된 지문센서 패키지(300)는 기판(120)의 제1면(120a)에 다수의 도전성 범프(111)와 지문센싱부(112)를 구비한 반도체다이(110)가 안착되고, 제2면(120b)에 코팅된 보호막(240)에 지문이 인접할 경우 정전용량 변화를 측정하여, 지문을 측정할 수 있다. 또한 지문센서 패키지(200)는 반도체다이(110)가 기판(120)에 플립칩 타입으로 안착되므로 공정을 간소화 할 수 있다.
이상에서 설명한 것은 본 발명에 의한 지문센서 패키지를 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능한 범위까지 본 발명의 기술적 정신이 있다고 할 것이다.
100, 200, 300; 지문센서 패키지
110; 반도체다이 120; 기판
130; 접착층 140; 보호판
150; 배젤 230,330; 절연 몰드
240; 340; 보호막 350; 재배선층
360; 외부 도전성 범프

Claims (17)

  1. 제1면과, 제1면의 반대면인 제2면을 갖는 판형상의 기판;
    평평한 제1면과, 제1면의 반대면인 제2면을 갖고, 상기 제2면에 상기 기판과 전기적으로 접속된 다수의 도전성 범프와, 지문센싱부가 구비된 반도체 다이;
    상기 반도체 다이의 제1면에 안착된 보호판; 및
    상기 보호판을 상기 기판에 고정하는 베젤을 포함하는 것을 특징으로 하는 지문센서 패키지.
  2. 청구항 1에 있어서,
    상기 반도체 다이는 상기 기판의 제1면과 상기 보호판의 사이에 개재되고,
    상기 지문센싱부가 상기 반도체 다이의 제2면 중심에 구비되고, 상기 다수의 도전성 범프가 상기 지문센싱부의 외주연으로부터 이격되도록 배치된 것을 특징으로 하는 지문센서 패키지.
  3. 청구항 1에 있어서,
    상기 보호판은 상기 반도체 다이의 평평한 제1면에 비도전성 접착제를 통해 접착된 것을 특징으로 하는 지문센서 패키지.
  4. 청구항 1에 있어서,
    상기 기판은
    다수의 도전성 패턴이 구비된 판 형상의 회로 기판으로, 상기 제1면으로 노출된 상기 도전성 패턴이 상기 반도체 다이의 상기 도전성 범프와 전기적으로 접속된 것을 특징으로 하는 지문센서 패키지.
  5. 청구항 1에 있어서,
    상기 반도체 다이의 상기 지문센싱부는 정전용량 변화를 통해 지문을 센싱하는 것을 특징으로 하는 지문센서 패키지.
  6. 제1면과, 제1면의 반대면인 제2면을 갖는 판형상의 기판;
    평평한 제1면과 제1면의 반대면인 제2면을 갖고, 상기 제2면에 상기 기판과 전기적으로 접속된 다수의 도전성 범프와, 지문센싱부가 구비된 반도체 다이;
    상기 반도체 다이의 측부를 감싸는 절연 몰드;및
    상기 반도체 다이의 상기 제1면에 코팅된 보호막을 포함하는 것을 특징으로 하는 지문센서 패키지.
  7. 청구항 6에 있어서,
    상기 반도체 다이는 상기 기판의 제1면과 상기 보호막 사이에 개재되고,
    상기 지문센싱부가 상기 반도체 다이의 제2면 중심에 구비되고, 상기 다수의 도전성 범프가 상기 지문센싱부의 외주연으로부터 이격되도록 배치된 것을 특징으로 하는 지문센서 패키지.
  8. 청구항 6에 있어서,
    상기 기판은
    다수의 도전성 패턴이 구비된 판 형상의 회로 기판으로, 상기 제1면으로 노출된 상기 도전성 패턴이 상기 반도체 다이의 상기 도전성 범프와 전기적으로 접속된 것을 특징으로 하는 지문센서 패키지.
  9. 청구항 6에 있어서,
    상기 반도체 다이의 상기 지문센싱부는 정전용량 변화를 통해 지문을 센싱하는 것을 특징으로 하는 지문센서 패키지.
  10. 청구항 6에 있어서,
    상기 보호막은 상기 반도체 다이의 제1면을 모두 덮고, 연장되어 상기 절연 몰드의 제1면도 덮는 것을 특징으로 하는 지문센서 패키지.
  11. 제1면과, 제1면의 반대면인 제2면을 갖는 판형상의 기판;
    평평한 제1면과, 제1면의 반대면인 제2면을 갖고, 상기 제2면에 상기 기판과 전기적으로 접속된 다수의 도전성 범프와, 지문센싱부가 구비된 반도체 다이;
    상기 기판의 제1면, 반도체 다이의 측부 및 제1면을 감싸는 절연 몰드; 및
    상기 기판의 제2면에 코팅된 보호막을 포함하는 것을 특징으로 하는 지문센서 패키지.
  12. 청구항 11에 있어서,
    상기 기판은
    다수의 도전성 패턴이 구비된 판 형상의 회로 기판으로, 제1면으로 노출된 상기 도전성 패턴이 상기 반도체 다이의 상기 도전성 범프와 전기적으로 접속된 것을 특징으로 하는 지문센서 패키지.
  13. 청구항 12에 있어서,
    상기 절연 몰드는 제1면과 제2면 사이를 관통하는 관통홀을 구비하고, 상기 관통홀을 통해 상기 기판의 제1면에 구비된 상기 다수의 도전성 패턴 중 적어도 하나를 외부로 노출시키는 것을 특징으로 하는 지문센서 패키지.
  14. 청구항 13에 있어서,
    상기 절연 몰드를 통해 외부로 노출된 상기 도전성 패턴과 전기적으로 접속된 재배선층을 더 포함하는 것을 특징으로 하는 지문센서 패키지.
  15. 청구항 14에 있어서,
    상기 재배선층은 상기 관통홀의 내벽과 상기 절연 몰드의 제1면을 따라 일부 연장되도록 형성된 것을 특징으로 하는 지문센서 패키지.
  16. 청구항 14에 있어서,
    상기 절연 몰드의 제1면에 형성된 상기 재배선층에 접속되도록 형성된 외부 도전성 범프를 더 포함하는 것을 특징으로 하는 지문센서 패키지.
  17. 청구항 11에 있어서,
    상기 반도체 다이의 상기 지문센싱부는 정전용량 변화를 통해 지문을 센싱하는 것을 특징으로 하는 지문센서 패키지.
KR1020150065900A 2015-05-12 2015-05-12 지문센서 패키지 KR101942141B1 (ko)

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US15/131,967 US10297515B2 (en) 2015-05-12 2016-04-18 Fingerprint sensor and manufacturing method thereof
TW111103751A TW202220117A (zh) 2015-05-12 2016-05-12 指紋感測器及製造其之方法
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US15/591,416 US10446455B2 (en) 2015-05-12 2017-05-10 Fingerprint sensor and manufacturing method thereof
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