TWI711093B - 製造晶圓級低熔化溫度互連之方法 - Google Patents

製造晶圓級低熔化溫度互連之方法 Download PDF

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TWI711093B
TWI711093B TW107135037A TW107135037A TWI711093B TW I711093 B TWI711093 B TW I711093B TW 107135037 A TW107135037 A TW 107135037A TW 107135037 A TW107135037 A TW 107135037A TW I711093 B TWI711093 B TW I711093B
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wafer
layer
oxide layer
degrees celsius
indium
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TW107135037A
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TW201941322A (zh
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尚恩 基科尼
艾瑞克 米勒
喬治 葛瑞馬
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美商雷神公司
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Abstract

製造平面式晶圓級金屬柱部陣列的方法包括在第一晶圓之基板上的光致抗蝕劑(PR)圖案模具內電鍍柱部陣列。從該基底和柱部陣列剝離該PR圖案模具。在低於攝氏150度之溫度下將氧化物層施加在該第一晶圓的表面之上。施加化學機械拋光(CMP)，以平坦化該氧化物層和該柱部陣列。

Description

製造晶圓級低熔化溫度互連之方法
本揭示內容有關半導體裝置的製造，且更特別地是建立晶圓互連。
採用各種製造方法來建立晶圓互連。典型之晶圓接合製程涉及使用直接接合雜化(DBH或直接接合互連)連接晶圓。這涉及首先藉由在金屬種晶層上經過圖案化光致抗蝕劑(PR)的電鍍模具上電鍍而於二晶圓上形成柱部。然後在該金屬結構之上沈積一層SiO2。然後，例如，藉由使用化學機械拋光(CMP)製程將該等表面平面化(亦即，製成平面)。然後將該等晶圓的平坦表面對齊並接合在一起並退火。
具有低熔點之某些金屬、諸如銦當用作互連時具有想要的屬性，尤其是在需要柔性互連金屬和非磁性金屬之製程中。然而，典型的DBH互連製造製程傾向於超過攝氏225度的溫度。在如此高溫下之製程傾向於造成低熔點金屬、諸如具有熔點約為攝氏157度的銦，以在互連之前熔化及/或變形。另外，在包括某些低熔點互連的表面上施加CMP會污染該氧化物接合表面，使得該表面不能達到DBH所需之接合強度。
另外，當在開發互連的製程期間填充細間距陣列時，典型之電鍍技術具有均勻性挑戰。該細間距陣列中的不均勻性可導致不佳之互連性。
鑑於上述需要，在至少一個態樣中，需要一種製程，其允許用於製造晶圓的DBH之互連的有效方法，該方法能以低熔點材料實踐，同時仍然提供用於互連之高產量細間距陣列。
在至少一態樣中，該主題技術有關一種製造平面式晶圓級金屬柱陣列的方法。在第一晶圓之基板上的光致抗蝕劑(PR)圖案模具內電鍍一陣列柱部。從該基板和柱部陣列剝離該PR圖案模具。將氧化物層在低於攝氏150度之溫度下施加在該第一晶圓的表面上。應用化學機械拋光(CMP)以平坦化該氧化物層和該柱部陣列。
於一些實施例中，在剝離該圖案模具的步驟之後，PR層被施加環繞每一柱部。在施加PR層的步驟之後，可在該基板上蝕刻金屬種晶層以切割該陣列柱部。在蝕刻該金屬種晶層的步驟之後，可剝離該PR層。
於一些實施例中，在施加CMP的步驟之後，保護具有第二PR層的柱部陣列之暴露表面。該氧化物層的表面能接著譬如藉由施加HCL而被清潔。於一些實施例中，在施加氧化物層之步驟期間，該氧化物層於攝氏127度和攝氏147度之間的溫度下施加。在某些情況下，該氧化物層於攝氏135度和攝氏139度之間的溫度下施加。在某些情況下，這些柱部係由銦所組成。
於至少一態樣中，該主題技術有關一種製造具有銦互連之接合晶圓組件的方法。第一晶圓係設有基底層、絕緣層、和金屬種晶層，該金屬種晶層係藉由延伸穿過該絕緣層中之第一複數個孔的通孔連接至該基底層。在該金屬種晶層之上施加光致抗蝕劑(PR)圖案模具，使得穿過該PR圖案模具的第二複數個孔與該等通孔對齊。將銦電鍍在該PR圖案模具中之第二複數個孔內，以在該第一晶圓上形成銦柱部陣列。該PR圖案模具被剝離。蝕刻該金屬種晶層的一部分，以切割該銦柱部陣列。在低於攝氏150度 之溫度下在該第一晶圓的表面上施加氧化物層。應用化學機械拋光(CMP)以形成平坦表面，該平坦表面包括該銦柱部陣列和該氧化物層。重複該等上述步驟以建立第二晶圓。然後對齊該第一和第二晶圓之銦柱部。然後將該第一晶圓和第二晶圓接合在一起以形成該被接合的晶圓組件。
於一些實施例中，經過低溫退火製程完成該接合。在一些實施例中，於每個銦柱部周圍放置PR層。在一些實施例中，於蝕刻該金屬種晶層之後並且在施加該氧化物層之前，剝離該PR層。於一些實施例中，在施加CMP之後，將第二PR層放置於該銦柱部陣列的暴露表面之上。在一些情況下，於放置第二PR層的步驟之後，清潔該氧化物層的暴露表面。可藉由施加HCl來清潔該氧化物層之暴露表面。在一些實施例中，該氧化物層係於攝氏127度和攝氏147度之間的溫度下施加。在一些實施例中，該氧化物層係於攝氏135度和攝氏139度之間的溫度下施加。
100‧‧‧方法
102‧‧‧步驟
104‧‧‧步驟
106‧‧‧步驟
108‧‧‧步驟
109‧‧‧步驟
110‧‧‧步驟
111‧‧‧步驟
112‧‧‧步驟
114‧‧‧步驟
116‧‧‧步驟
118‧‧‧步驟
120‧‧‧步驟
122‧‧‧步驟
130‧‧‧方法
132‧‧‧步驟
134‧‧‧步驟
136‧‧‧步驟
138‧‧‧步驟
250‧‧‧第一晶圓
252‧‧‧裝置層
254‧‧‧絕緣層
256‧‧‧金屬種晶層
260‧‧‧上表面
262‧‧‧穿孔
264‧‧‧通孔
266‧‧‧柱部
268‧‧‧PR圖案模具
270‧‧‧穿孔
272‧‧‧第二PR層
274‧‧‧氧化物層
276‧‧‧表面
278‧‧‧表面
280‧‧‧上表面
282‧‧‧表面
284‧‧‧第二PR層
286‧‧‧第二晶圓
288‧‧‧柱部
290‧‧‧晶圓組件
因此，所揭示之系統所屬領域的普通技術人員將更容易理解如何製造和使用它們，可參考以下附圖。
圖1A係流程圖，說明用於按照該主題技術製造晶圓組件之方法。
圖1B係流程圖，說明用於按照該主題技術製造晶圓級互連的簡化方法。
圖2係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖3係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖4係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖5係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖6係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖7係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖8係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖9係按照該主題技術製造晶圓級互連之方法期間的晶圓之概要說明的截面圖。
圖10係藉由按照該主題技術之方法所建立的接合晶圓組件之概要說明的截面圖。
該主題技術克服了與半導體裝置之製造相關聯的許多先前技術領域問題。簡而言之，該主題技術提供了一種製造晶圓或晶圓組件的方法，尤其是可包括基於銦之互連的晶圓。通過以下結合附圖給出之某些較佳實施例的詳細描述，本領域普通技術人員將更容易明白在此中所揭示之系統和方法的優點和其他特色，該等附圖闡述了本發明之代表性實施例。相像的參考數字在此中被使用於表示相像之零件。再者，於該等圖面中，表示諸如“上”、“下”、“遠側”和“近側”的方位之字詞僅被使用於幫助敘述零組件相對於彼此的位置。例如，零件之“上”表面係僅只意指敘述一與該相同零件的“下”表面分開之表面，如在該等圖面中所顯示。沒有使用表示方位的字詞來敘述絕對方位(亦即，在此“上”零件必須始終位於頂部)。
現在參考圖1A，說明用於按照該主題技術製造晶圓級互連 之方法100的流程圖被顯示。該方法100大致上涉及在晶圓裝置、諸如III-V半導體裝置上建立互連，並與分開之晶圓選擇性地接合，以形成晶圓組件。於所顯示的範例中，該方法100在第一個步驟102開始，其包括提供第一晶圓250，該第一晶圓設有裝置層252、絕緣層254、及金屬種晶層256，如在圖2中所視。製造該第一晶圓250之預備步驟在該技術領域中被了解，且因此其完全的敘述被省略。該裝置層252典型係矽基底及包括延伸穿過其中之處理電路系統，該處理電路系統由Al、Cu、植入等所構成。該絕緣層254被定位於該裝置層252的上表面260上方，並且可為由諸如SiO2、SiNx等材料所構成。提供該金屬種晶層256，用於電鍍柱部或互連部，如下面更全面地討論的，並且由諸如TiW、Al、Sn等材料所構成。該絕緣層254被第一複數個孔或穿孔262所破開，該金屬種晶層256延伸穿過該等孔，形成通孔264。該等通孔264被使用於提供該裝置層252與下面所討論的柱部或互連之間的連接。值得注意的是，該絕緣層254和該金屬種晶層256兩者可額外或替代地由該技術領域中所已知之其他材料所構成，以按照在此中所敘述的絕緣層254及金屬種晶層256起作用。
在步驟104及現在額外地參考圖3，為了建立該等互連、或柱部266，將光致抗蝕劑(PR)圖案模具268施加在該金屬種晶層256上。該PR圖案模具268被圖案化有第二複數個孔或穿孔270，其對應於該絕緣層254中之穿孔262。在步驟106，將銦電鍍在PR圖案模具268內，以形成一陣列柱部266。該PR圖案模具268允許用於改善的銦電鍍均勻性並減少來自接合氧化物之銦污染，因為銦不會被拖曳過氧化物。該等柱部266被形成為小的密集陣列，其在提供電流時從該金屬種晶層256生長，並且最終將具有用於該第一晶圓250之互連的高產量細間距陣列之作用。該等柱部266係在該等穿孔270內生長，該等穿孔270與該等通孔264對齊，使得該等通孔264將該等柱部266連接至該裝置層252。如此，該等柱部266最終形成該第一晶圓250上 的互連。雖然已發現銦有效地使用於在該揭示方法100內形成該等柱部266，但應注意的是，在此中所討論之方法係適用於可被使用於形成晶圓互連的其他元件及/或材料。尤其是，已經發現，當形成該等互連之柱部266包含具有低熔點(諸如低於攝氏200度)的材料/元件時，在此中所討論之方法100和其他方法係有效的。這是因為該方法100被設計來避免熔化具有低熔點之材料，反之形成互連和結合晶圓的其他製程通常將會熔化及/或變形此種材料。
在步驟108，該PR圖案模具268係如在圖4中所視地剝離。然後，看至圖5，第二PR層272可於步驟109被選擇性地放置在該等柱部266周圍。於步驟110，該金屬種晶層256接著被蝕刻至切割該等柱部266，使得該等柱部266係彼此隔離(亦即不直接地經過該金屬種晶層256連接)。蝕刻可藉由例如本技術領域中已知之光刻技術所完成。該第二PR層272在該金屬蝕刻製程期間保護該等柱部266，並且於步驟111、在該蝕刻製程完成之後可剝離該第二PR層272。
於步驟112，低溫氧化物被施加在該第一晶圓250的表面276(以及從該表面276延伸的柱部266周圍)之上，如於圖6中所視，以形成氧化物層274。在一範例中，於該等柱部266係由銦所構成的情況下，該低溫氧化物低於銦之熔化溫度，其係約攝氏157度。因此，在至少一些實施例中，該低溫氧化物的溫度係在低於攝氏150度之溫度下施加。於一些實施例中，該低溫氧化物在低於銦熔點的基本上攝氏20度之溫度下施加、諸如在攝氏127度和攝氏147度之間。於其他實施例中，低溫氧化物的溫度係在攝氏135度和攝氏139度之間。如果將異於銦的材料用於柱部266，則可以施加對應之氧化物溫度範圍(例如，實質上比其他材料的熔點低20度)。另一選擇係，如果該等柱部266係由熔點高於銦之材料所形成，則該氧化物可在上述溫度範圍之一內施加。藉由在低於(或遠低於)柱部266的熔點之溫度下施加該氧 化物，在形成該氧化物層274期間，該等柱部266將變形的風險較小。以這種方式，保持該晶圓250之完整性。
於形成該氧化物層274之後，形成該第一晶圓250的新表面278，其典型係不均勻的。因此，在步驟114，並且如於圖7中所示，然後將化學機械拋光(CMP)施加至該非均勻之表面278。將CMP施加至該第一晶圓250的非均勻表面278上去除多餘之柱部266和氧化物層274材料，以平滑及/或平整該表面278。施加CMP直到該氧化物層274和柱部266已被平坦化，形成該晶圓250的平坦且連續之上表面280。平坦化表面280有助於將該第一晶圓250接合至第二晶圓，如下面所討論。
其次，在步驟116，任選地清潔該氧化物層274的表面282，而不清潔該等柱部266之表面。圖8顯示將第二PR層284放置於該等柱部266之上的可選中間步驟，以在清潔期間用作該等柱部266之保護蓋。清潔典型涉及將諸如酸的物質施加至該氧化物層274之表面282。例如，可將HCl施加至該氧化物層274的表面282之上。清潔該表面282去除藉由該等柱部266的形成所產生之污染物(例如在該氧化物層274上的銦污染物)，且有助於製備該第一晶圓250，用以與另一晶圓有效接合。在清潔完成之後，可在圖9使用該技術領域中已知的任何機制由該等柱部266剝離該第二PR層284。現在，該第一晶圓250係準備好接合至另一個晶圓。
現在參考圖10，該第一晶圓250能被接合至第二晶圓286，其係類似於該第一晶圓250、或與該第一晶圓250完全相同，以形成晶圓組件290。譬如，在步驟118，可第二次施行上述步驟(亦即102-116)，以形成該第二晶圓286並準備它用於進行接合。為此，該第二晶圓286可同樣地包括由在該第二晶圓286內之類似位置處的銦(或用於形成互連之其他低溫材料)所構成的柱部288，作為在該第一晶圓250內之柱部266。在該第二晶圓286內的類似位置處形成柱部288允許該第一和第二晶圓250、286之柱部266、 288的良好對齊。例如，圖10顯示具有類似定位之柱部266、288的第一晶圓250和第二晶圓286。在步驟120，接著使用單獨之裝置(該等圖面中未示出)將該第一晶圓250的柱部266與該第二晶圓286之柱部288對齊。然後在步驟122，將該等晶圓250、286接合以形成該晶圓組件290。可例如藉由低溫退火製程來完成接合。一旦被接合，該等柱部266、288提供該等晶圓250、286之間的互連。
值得注意的是，且如上所述，並非圖1A中所顯示之製造方法的所有步驟係絕對必要的。雖然圖1A中所顯示之各種步驟可提供不同的益處，如果需要，圖1A中所顯示之方法可藉由製造僅具有圖1A中所顯示的一些步驟之晶圓來簡化。為此，圖1B中顯示根據該主題技術製造晶圓的簡化方法130。
現在參考圖1B，該方法130開始於第一晶圓250之基板上電鍍諸如柱部266的柱部陣列，諸如圖3中所顯示。如相對於方法100所敘述，該等柱部266可從包括金屬種晶層256、絕緣層254、和裝置層252之基底的金屬種晶層256生長。再者，柱部266可於PR圖案模具268內生長。另一選擇係，可使用物理蒸氣沈積、化學蒸氣沈積等來沈積該柱部金屬。
在步驟134，於該等柱部266已形成之後，該PR圖案模具268可為由該第一晶圓250剝離，如在圖4中所視。低溫氧化物接著於步驟136被施加在該第一晶圓250的表面之上，以形成氧化物層274，如在圖6中所視。如上述所討論，該低溫氧化物能在低於該等柱部266的熔點在實質上攝氏20度之溫度下施加。例如，如果該等柱部266係銦(其具有大約攝氏157度的熔點)，則該低溫可於攝氏127度和攝氏147度之間、在攝氏135度和攝氏139度之間、或簡單地低於攝氏150度被施加。該低溫氧化物可在低於被使用於形成該等柱部266的其他材料之熔化溫度的相似範圍下施加，或另一選擇係，可應用該上述溫度範圍而不管所使用之材料如何。最後，在步驟138，將CMP 施加到該第一晶圓250的表面，以平坦化藉由該等柱部266和氧化物層274所形成之表面280，如圖7中所視。然後可任選地清潔該第一晶圓250，如相對於步驟116所討論，且接著被接合至第二晶圓286以形成晶圓組件290，如步驟120-122中所討論且如圖10中所顯示。值得注意的是，在不同之實施例中，如果需要，相對於方法100在圖1A中所揭示及/或在此處的附圖中所顯示之任何步驟或步驟的組合可為與圖1B中所揭示之相對於方法130的步驟結合，以提供額外之益處。
相關領域的普通技術人員將理解，在替代實施例中，若干元件之功能可為藉由更少的元件或單個元件來執行。類似地，於一些實施例中，任何功能元件可施行比相對於所說明實施例來敘述之操作更少或不同的操作。而且，出於說明之目的而顯示為不同之功能元件(例如，模具等)可被併入在特定實施方式中的其他功能元件內。
雖然已相對於較佳實施例敘述該主題技術，但是本領域技術人員將容易理解，在不脫離本主題技術之精神或範圍的情況下，可對該主題技術進行各種改變及/或修改。例如，每個申請專利範圍能以多種相依方式從任何或所有申請專利範圍獲得，即使這種申請專利範圍最初未被主張。另外，於各種實施例中，所示方法可用所示步驟之任何組合進行、或用所示步驟的一部分之任何組合進行。
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Claims (17)

  1. 一種製造平面式晶圓級金屬柱部陣列之方法，包含：在第一晶圓的基底上之光致抗蝕劑(PR)圖案模具內電鍍一柱部陣列；由該基底和柱部陣列剝離該PR圖案模具；在剝離該PR圖案模具的步驟之後環繞每一柱部施加PR層；在施加PR層的步驟之後於該基底上蝕刻金屬種晶層，以切割該柱部陣列；在低於攝氏150度的溫度下在該第一晶圓之表面上及從該表面延伸的該柱部陣列周圍施加氧化物層；及施加化學機械拋光(CMP)來平坦化該氧化物層和該柱部陣列。
  2. 如申請專利範圍第1項之方法，另包含在蝕刻金屬種晶層的步驟之後剝離該PR層。
  3. 如申請專利範圍第1項之方法，其中在施加氧化物層的步驟中，該氧化物層係於攝氏127度及攝氏147度之間的溫度下施加。
  4. 如申請專利範圍第1項之方法，其中在施加氧化物層的步驟中，該氧化物層係於攝氏135度及攝氏139度之間的溫度下施加。
  5. 如申請專利範圍第1項之方法，其中該等柱部係由銦所構成。
  6. 一種製造具有銦互連的接合晶圓組件之方法，包含：a)提供具有基底層、絕緣層、及金屬種晶層的第一晶圓，該金屬種晶層藉由延伸經過該絕緣層中之第一複數個孔的通孔被連接至該基底層；b)將光致抗蝕劑(PR)圖案模具施加在該金屬種晶層之上，使得經過該PR圖案模具的第二複數個孔與該等通孔對齊；c)於該PR圖案模具中之該第二複數個孔內電鍍銦，以在該第一晶圓上形成銦柱部陣列；d)剝離該PR圖案模具； e)蝕刻該金屬種晶層的一部份，以切割該銦柱部陣列；f)在低於攝氏150度之溫度下將氧化物層施加在該第一晶圓的表面之上；g)施加化學機械拋光(CMP)以形成平面式表面，該平面式表面包含該銦柱部陣列及該氧化物層；h)施行步驟a)-g)以建立第二晶圓；i)對齊該第一及第二晶圓的銦柱部；及j)將該第一晶圓與該第二晶圓接合在一起，以形成該接合之晶圓組件。
  7. 如申請專利範圍第6項之方法，其中於步驟(j)中，該接合係經過低溫退火製程所完成。
  8. 如申請專利範圍第6項之方法，另包含在步驟(d)之後及於步驟(e)之前，將PR層放置環繞每一銦柱部。
  9. 如申請專利範圍第8項之方法，另包含在步驟(e)之後及於步驟(f)之前，剝離該PR層。
  10. 如申請專利範圍第8項之方法，另包含在步驟(g)之後，將第二PR層放置於該銦柱部陣列的暴露表面之上。
  11. 如申請專利範圍第10項之方法，另包含在放置第二PR層的步驟之後，清潔該氧化物層的暴露表面。
  12. 如申請專利範圍第11項之方法，其中清潔該氧化物層的暴露表面係藉由施加HCl所完成。
  13. 如申請專利範圍第6項之方法，其中於該步驟(f)中，該氧化物層係在攝氏127度及攝氏147度之間的溫度下施加。
  14. 如申請專利範圍第6項之方法，其中於該步驟(f)中，該氧化物層係在攝氏135度及攝氏139度之間的溫度下施加。
  15. 一種製造平面式晶圓級金屬柱部陣列之方法，包含：在第一晶圓的基底上之光致抗蝕劑(PR)圖案模具內電鍍一柱部陣列； 由該基底和柱部陣列剝離該PR圖案模具；在剝離該PR圖案模具的步驟之後環繞每一柱部施加PR層；在低於攝氏150度的溫度下在該第一晶圓之表面上及從該表面延伸的該柱部陣列周圍施加氧化物層；施加化學機械拋光(CMP)來平坦化該氧化物層和該柱部陣列；及在施加CMP的步驟之後以第二PR層保護該柱部陣列的暴露表面。
  16. 如申請專利範圍第15項之方法，另包含在保護該柱部陣列之暴露表面的步驟之後清潔該氧化物層的表面。
  17. 如申請專利範圍第16項之方法，其中於清潔該氧化物層的表面之步驟中，該表面係藉由施加HCl所清潔。
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