TWI703206B - 腔室清潔及半導體蝕刻氣體 - Google Patents

腔室清潔及半導體蝕刻氣體 Download PDF

Info

Publication number
TWI703206B
TWI703206B TW107147635A TW107147635A TWI703206B TW I703206 B TWI703206 B TW I703206B TW 107147635 A TW107147635 A TW 107147635A TW 107147635 A TW107147635 A TW 107147635A TW I703206 B TWI703206 B TW I703206B
Authority
TW
Taiwan
Prior art keywords
gas
etching
semiconductor
plasma
processing chamber
Prior art date
Application number
TW107147635A
Other languages
English (en)
Chinese (zh)
Other versions
TW201920614A (zh
Inventor
潘生
Original Assignee
美商杜邦股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商杜邦股份有限公司 filed Critical 美商杜邦股份有限公司
Publication of TW201920614A publication Critical patent/TW201920614A/zh
Application granted granted Critical
Publication of TWI703206B publication Critical patent/TWI703206B/zh

Links

Classifications

    • H10P50/283—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H10P50/242—
    • H10P50/73—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
TW107147635A 2013-12-30 2014-12-27 腔室清潔及半導體蝕刻氣體 TWI703206B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361921594P 2013-12-30 2013-12-30
US61/921,594 2013-12-30

Publications (2)

Publication Number Publication Date
TW201920614A TW201920614A (zh) 2019-06-01
TWI703206B true TWI703206B (zh) 2020-09-01

Family

ID=52283000

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107147635A TWI703206B (zh) 2013-12-30 2014-12-27 腔室清潔及半導體蝕刻氣體
TW103145901A TWI650405B (zh) 2013-12-30 2014-12-27 腔室清潔及半導體蝕刻氣體

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103145901A TWI650405B (zh) 2013-12-30 2014-12-27 腔室清潔及半導體蝕刻氣體

Country Status (8)

Country Link
US (3) US10109496B2 (enExample)
EP (1) EP3090073B1 (enExample)
JP (2) JP6462699B2 (enExample)
KR (2) KR102400322B1 (enExample)
CN (2) CN112981369B (enExample)
SG (2) SG11201605356PA (enExample)
TW (2) TWI703206B (enExample)
WO (1) WO2015103003A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI798875B (zh) * 2020-10-15 2023-04-11 日商昭和電工股份有限公司 蝕刻氣體及其製造方法、以及、蝕刻方法、半導體元件之製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112981369B (zh) * 2013-12-30 2023-11-10 科慕埃弗西有限公司 室清洁和半导体蚀刻气体
JP2016207788A (ja) * 2015-04-20 2016-12-08 東京エレクトロン株式会社 上部電極の表面処理方法、プラズマ処理装置及び上部電極
KR20190038945A (ko) * 2016-08-29 2019-04-09 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 준원자 층 에칭 방법
TWI761461B (zh) 2017-02-23 2022-04-21 日商東京威力科創股份有限公司 用於製造自對準塊體結構之矽氮化物心軸的異向性抽出方法
US10431470B2 (en) 2017-02-23 2019-10-01 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
KR102762670B1 (ko) * 2017-11-30 2025-02-04 램 리써치 코포레이션 실리콘 옥사이드 실리콘 나이트라이드 스택 계단 단차 (stair step) 에칭
CN112823148B (zh) * 2018-10-09 2024-10-15 大金工业株式会社 全氟炔烃化合物的制造方法
JP7391297B2 (ja) * 2019-06-28 2023-12-05 株式会社Flosfia エッチング処理方法およびエッチング処理装置
US11854773B2 (en) * 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
JP7775835B2 (ja) 2020-10-15 2025-11-26 株式会社レゾナック エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法
TWI748741B (zh) * 2020-11-11 2021-12-01 暉盛科技股份有限公司 電漿晶圓清潔機及使用其清潔晶圓的方法
KR102244885B1 (ko) * 2021-02-03 2021-04-27 (주)원익머트리얼즈 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정
KR102582730B1 (ko) * 2021-04-07 2023-09-25 (주)후성 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
WO2025019740A1 (en) * 2023-07-20 2025-01-23 The Chemours Company Fc, Llc Compositions comprising 1,1,1,4,4,4-hexafluoro-2-butyne
WO2025259960A1 (en) * 2024-06-14 2025-12-18 Applied Materials, Inc. Vapor phase alkali metal removal for in-situ cleaning of processing chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI290741B (en) * 2000-11-08 2007-12-01 Daikin Ind Ltd Dry etching gas and method for dry etching
CN101777492A (zh) * 2004-11-05 2010-07-14 东京毅力科创株式会社 等离子体蚀刻加工方法
TW201217500A (en) * 2010-07-12 2012-05-01 Central Glass Co Ltd Dry etching agent and dry etching method

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09191002A (ja) * 1996-01-10 1997-07-22 Sony Corp プラズマエッチング方法
US5824375A (en) 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean
WO1999008805A1 (en) 1997-08-20 1999-02-25 Air Liquide Electronics Chemicals & Services, Inc. Plasma cleaning and etching methods using non-global-warming compounds
US6849193B2 (en) * 1999-03-25 2005-02-01 Hoiman Hung Highly selective process for etching oxide over nitride using hexafluorobutadiene
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
JP2003234299A (ja) * 2002-02-12 2003-08-22 Research Institute Of Innovative Technology For The Earth クリーニングガス及びエッチングガス
JP3527915B2 (ja) 2002-03-27 2004-05-17 株式会社ルネサステクノロジ Ｃｖｄ装置およびそれを用いたｃｖｄ装置のクリーニング方法
JP4164643B2 (ja) * 2002-07-17 2008-10-15 日本ゼオン株式会社 ドライエッチング方法及びパーフルオロ−２−ペンチンの製造方法
JP2005142198A (ja) * 2003-11-04 2005-06-02 Taiyo Nippon Sanso Corp クリーニングガス及びクリーニング方法
US20050258137A1 (en) 2004-03-24 2005-11-24 Sawin Herbert H Remote chamber methods for removing surface deposits
KR20070043697A (ko) * 2004-03-24 2007-04-25 매사추세츠 인스티튜트 오브 테크놀로지 표면 적층물을 제거하기 위한 원격 챔버 방법
JP2006156992A (ja) * 2004-11-05 2006-06-15 Tokyo Electron Ltd プラズマ処理方法
US8187415B2 (en) 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
JP2008244144A (ja) 2007-03-27 2008-10-09 Toshiba Corp 半導体装置の製造方法
JP5226296B2 (ja) * 2007-12-27 2013-07-03 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP2011124239A (ja) 2008-03-31 2011-06-23 Daikin Industries Ltd ドライエッチングガス及びそれを用いたドライエッチング方法
JP5266902B2 (ja) * 2008-06-20 2013-08-21 日本ゼオン株式会社 含フッ素オレフィン化合物の製造方法
WO2010100254A1 (en) * 2009-03-06 2010-09-10 Solvay Fluor Gmbh Use of unsaturated hydrofluorocarbons
JP2013030531A (ja) 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
CN112981369B (zh) * 2013-12-30 2023-11-10 科慕埃弗西有限公司 室清洁和半导体蚀刻气体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI290741B (en) * 2000-11-08 2007-12-01 Daikin Ind Ltd Dry etching gas and method for dry etching
CN101777492A (zh) * 2004-11-05 2010-07-14 东京毅力科创株式会社 等离子体蚀刻加工方法
TW201217500A (en) * 2010-07-12 2012-05-01 Central Glass Co Ltd Dry etching agent and dry etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI798875B (zh) * 2020-10-15 2023-04-11 日商昭和電工股份有限公司 蝕刻氣體及其製造方法、以及、蝕刻方法、半導體元件之製造方法

Also Published As

Publication number Publication date
KR102476934B1 (ko) 2022-12-14
TW201920614A (zh) 2019-06-01
US10109496B2 (en) 2018-10-23
EP3090073B1 (en) 2020-02-05
US20180366339A1 (en) 2018-12-20
EP3090073A1 (en) 2016-11-09
JP6775569B2 (ja) 2020-10-28
KR20160105407A (ko) 2016-09-06
JP2019057737A (ja) 2019-04-11
TW201534689A (zh) 2015-09-16
SG11201605356PA (en) 2016-07-28
US20160343579A1 (en) 2016-11-24
CN112981369A (zh) 2021-06-18
CN106414798A (zh) 2017-02-15
US20190027375A1 (en) 2019-01-24
CN112981369B (zh) 2023-11-10
WO2015103003A1 (en) 2015-07-09
CN106414798B (zh) 2021-04-06
KR102400322B1 (ko) 2022-05-20
TWI650405B (zh) 2019-02-11
JP6462699B2 (ja) 2019-01-30
JP2017503350A (ja) 2017-01-26
SG10201906117XA (en) 2019-08-27
KR20220070062A (ko) 2022-05-27

Similar Documents

Publication Publication Date Title
TWI703206B (zh) 腔室清潔及半導體蝕刻氣體
TWI781210B (zh) 用於蝕刻多個堆疊層之化學過程
JP6871233B2 (ja) シリコン含有膜をエッチングするための方法
TWI248126B (en) Cleaning CVD chambers following deposition of porogen-containing materials
WO2012124726A1 (ja) エッチングガスおよびエッチング方法
TWI281715B (en) Remote chamber methods for removing surface deposits
KR102275996B1 (ko) 하이드로플루오로올레핀 식각 가스 혼합물
US20050258137A1 (en) Remote chamber methods for removing surface deposits
HK1119209A (en) Remote chamber methods for removing surface deposits