TWI702668B - 磨光裝置 - Google Patents
磨光裝置 Download PDFInfo
- Publication number
- TWI702668B TWI702668B TW107118720A TW107118720A TWI702668B TW I702668 B TWI702668 B TW I702668B TW 107118720 A TW107118720 A TW 107118720A TW 107118720 A TW107118720 A TW 107118720A TW I702668 B TWI702668 B TW I702668B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- optical head
- polishing
- light
- film thickness
- Prior art date
Links
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010289209A JP5980476B2 (ja) | 2010-12-27 | 2010-12-27 | ポリッシング装置およびポリッシング方法 |
| JP2010-289209 | 2010-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201834105A TW201834105A (zh) | 2018-09-16 |
| TWI702668B true TWI702668B (zh) | 2020-08-21 |
Family
ID=46317752
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107118720A TWI702668B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
| TW100148258A TWI538076B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置、磨光方法及磨光墊 |
| TW105113929A TWI629735B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
| TW109124274A TWI729884B (zh) | 2010-12-27 | 2011-12-23 | 磨光墊 |
| TW109124275A TWI724945B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100148258A TWI538076B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置、磨光方法及磨光墊 |
| TW105113929A TWI629735B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
| TW109124274A TWI729884B (zh) | 2010-12-27 | 2011-12-23 | 磨光墊 |
| TW109124275A TWI724945B (zh) | 2010-12-27 | 2011-12-23 | 磨光裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US9401293B2 (enExample) |
| JP (2) | JP5980476B2 (enExample) |
| KR (5) | KR101739074B1 (enExample) |
| TW (5) | TWI702668B (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010173052A (ja) * | 2009-02-02 | 2010-08-12 | Sumco Corp | 研磨パッド厚測定方法、および研磨パッド厚測定装置 |
| US8545289B2 (en) * | 2011-04-13 | 2013-10-01 | Nanya Technology Corporation | Distance monitoring device |
| JP2013222856A (ja) * | 2012-04-17 | 2013-10-28 | Ebara Corp | 研磨装置および研磨方法 |
| KR101387980B1 (ko) * | 2012-11-22 | 2014-04-22 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법 |
| USD731448S1 (en) | 2013-10-29 | 2015-06-09 | Ebara Corporation | Polishing pad for substrate polishing apparatus |
| KR101539208B1 (ko) * | 2013-12-02 | 2015-07-24 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법 |
| JP6266493B2 (ja) * | 2014-03-20 | 2018-01-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
| JP6399873B2 (ja) * | 2014-09-17 | 2018-10-03 | 株式会社荏原製作所 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
| JP6109224B2 (ja) * | 2015-03-30 | 2017-04-05 | 株式会社日立国際電気 | 半導体装置の製造方法、プログラムおよび基板処理装置 |
| JP6133347B2 (ja) * | 2015-03-30 | 2017-05-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム及びプログラム |
| JP6473050B2 (ja) * | 2015-06-05 | 2019-02-20 | 株式会社荏原製作所 | 研磨装置 |
| KR101664110B1 (ko) * | 2015-07-27 | 2016-10-24 | 주식회사 케이씨텍 | 베어 웨이퍼의 연마 장치 |
| TW201710029A (zh) * | 2015-09-01 | 2017-03-16 | 荏原製作所股份有限公司 | 渦電流檢測器 |
| WO2017158955A1 (ja) * | 2016-03-14 | 2017-09-21 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体 |
| JP6650341B2 (ja) * | 2016-05-13 | 2020-02-19 | スピードファム株式会社 | 断面形状測定方法 |
| JP2018001296A (ja) * | 2016-06-28 | 2018-01-11 | 株式会社荏原製作所 | 研磨装置、研磨方法、及び研磨制御プログラム |
| JP6795337B2 (ja) * | 2016-06-29 | 2020-12-02 | 株式会社荏原製作所 | 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法 |
| JP6730124B2 (ja) * | 2016-08-01 | 2020-07-29 | 株式会社ディスコ | 厚み計測装置 |
| JP6730125B2 (ja) * | 2016-08-01 | 2020-07-29 | 株式会社ディスコ | 計測装置 |
| JP6829653B2 (ja) * | 2017-05-17 | 2021-02-10 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP7023063B2 (ja) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
| JP6902452B2 (ja) * | 2017-10-19 | 2021-07-14 | 株式会社荏原製作所 | 研磨装置 |
| JP6847811B2 (ja) | 2017-10-24 | 2021-03-24 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP6985107B2 (ja) | 2017-11-06 | 2021-12-22 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| KR102483003B1 (ko) * | 2017-11-13 | 2022-12-30 | 주식회사 케이씨텍 | 웨이퍼 연마 시스템 |
| KR102435764B1 (ko) * | 2017-11-17 | 2022-08-24 | 삼성디스플레이 주식회사 | 레이저 결정화 돌기의 제거 장치 및 방법 |
| KR102529817B1 (ko) * | 2018-05-02 | 2023-05-08 | 주식회사 케이씨텍 | 산화물층을 갖는 기판 처리 장치 |
| JP7179586B2 (ja) * | 2018-11-08 | 2022-11-29 | 株式会社荏原製作所 | 渦電流検出装置及び研磨装置 |
| KR20200068785A (ko) * | 2018-12-05 | 2020-06-16 | 삼성디스플레이 주식회사 | 연마 모니터링 시스템 및 연마 모니터링 방법 |
| JP7145084B2 (ja) * | 2019-01-11 | 2022-09-30 | 株式会社荏原製作所 | 基板処理装置および基板処理装置において部分研磨されるべき領域を特定する方法 |
| KR102093286B1 (ko) * | 2019-07-05 | 2020-05-29 | (주)제이씨글로벌 | 광학적 웨이퍼 엔드포인트 이중검사장치 |
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| JP7374710B2 (ja) * | 2019-10-25 | 2023-11-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP7469032B2 (ja) * | 2019-12-10 | 2024-04-16 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP7361637B2 (ja) * | 2020-03-09 | 2023-10-16 | 株式会社荏原製作所 | 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
| JP7365282B2 (ja) * | 2020-03-26 | 2023-10-19 | 株式会社荏原製作所 | 研磨ヘッドシステムおよび研磨装置 |
| JP7709281B2 (ja) * | 2021-01-14 | 2025-07-16 | 株式会社荏原製作所 | 研磨装置、研磨方法、および基板の膜厚分布の可視化情報を出力する方法 |
| JP7575309B2 (ja) * | 2021-03-17 | 2024-10-29 | 株式会社荏原製作所 | 膜厚測定方法、ノッチ部の検出方法、および研磨装置 |
| JP7547275B2 (ja) * | 2021-03-31 | 2024-09-09 | 株式会社荏原製作所 | ワークピースの膜厚を推定するモデルを作成する方法、そのようなモデルを用いてワークピースの研磨中に膜厚を推定する方法、およびコンピュータにこれらの方法を実行させるためのプログラム |
| CN113664712A (zh) * | 2021-08-13 | 2021-11-19 | 芯盟科技有限公司 | 涡流侦测装置以及金属层厚度的测量方法 |
| JP7680347B2 (ja) * | 2021-12-24 | 2025-05-20 | 株式会社荏原製作所 | 膜厚測定方法および膜厚測定装置 |
| JP7218830B1 (ja) | 2022-04-14 | 2023-02-07 | 信越半導体株式会社 | 両面研磨装置及び両面研磨方法 |
| WO2024015530A1 (en) * | 2022-07-14 | 2024-01-18 | Applied Materials, Inc. | Monitoring thickness in face-up polishing |
| CN116810618A (zh) * | 2023-07-06 | 2023-09-29 | 华海清科股份有限公司 | 一种用于cmp的光学测量装置和化学机械抛光设备 |
| US12416490B1 (en) * | 2024-05-29 | 2025-09-16 | Beijing Tsd Semiconductor Co., Ltd. | Method and chemical mechanical planarization device for in-situ measurement of film thickness |
| WO2025246244A1 (zh) * | 2024-05-29 | 2025-12-04 | 北京特思迪半导体设备有限公司 | 用于原位测量膜厚的方法、参考光谱生成方法及设备 |
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| JP2001105308A (ja) * | 1999-10-04 | 2001-04-17 | Asahi Kasei Corp | 光伝送路付研磨装置 |
| US20010005265A1 (en) * | 1999-12-13 | 2001-06-28 | Toshifumi Kimba | Substrate film thickness measurement method, substrate film thickness measurement apparatus and substrate processing apparatus |
| US20040038624A1 (en) * | 2000-10-17 | 2004-02-26 | Matthew Weldon | Multiprobe detection system for chemical-mechanical planarization tool |
| JP2010023210A (ja) * | 2008-07-23 | 2010-02-04 | Ebara Corp | 研磨終点検知方法および研磨装置 |
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| JPH08174411A (ja) * | 1994-12-22 | 1996-07-09 | Ebara Corp | ポリッシング装置 |
| JP4451432B2 (ja) * | 1995-07-20 | 2010-04-14 | 株式会社荏原製作所 | ポリッシング方法 |
| US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| JP2004001227A (ja) | 1995-07-20 | 2004-01-08 | Ebara Corp | ポリッシング装置および方法 |
| JP3601910B2 (ja) * | 1995-07-20 | 2004-12-15 | 株式会社荏原製作所 | ポリッシング装置及び方法 |
| US6384915B1 (en) * | 1998-03-30 | 2002-05-07 | The Regents Of The University Of California | Catheter guided by optical coherence domain reflectometry |
| US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
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| JP5980476B2 (ja) | 2016-08-31 |
| JP2012138442A (ja) | 2012-07-19 |
| KR101868503B1 (ko) | 2018-06-19 |
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| US9969048B2 (en) | 2018-05-15 |
| US9401293B2 (en) | 2016-07-26 |
| TWI724945B (zh) | 2021-04-11 |
| TW201631681A (zh) | 2016-09-01 |
| TW202042322A (zh) | 2020-11-16 |
| TW201236098A (en) | 2012-09-01 |
| US20180229346A1 (en) | 2018-08-16 |
| KR20190038772A (ko) | 2019-04-09 |
| US20150332943A1 (en) | 2015-11-19 |
| US20160325399A1 (en) | 2016-11-10 |
| US20120164917A1 (en) | 2012-06-28 |
| TW202042323A (zh) | 2020-11-16 |
| KR20120074227A (ko) | 2012-07-05 |
| JP2016184770A (ja) | 2016-10-20 |
| TWI729884B (zh) | 2021-06-01 |
| KR102025784B1 (ko) | 2019-09-26 |
| KR102017770B1 (ko) | 2019-09-03 |
| TW201834105A (zh) | 2018-09-16 |
| US10343255B2 (en) | 2019-07-09 |
| JP6208299B2 (ja) | 2017-10-04 |
| TWI629735B (zh) | 2018-07-11 |
| KR101739074B1 (ko) | 2017-05-23 |
| KR20180048490A (ko) | 2018-05-10 |
| KR20170058893A (ko) | 2017-05-29 |
| KR20190038771A (ko) | 2019-04-09 |
| KR101966274B1 (ko) | 2019-04-05 |
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