TWI702267B - 熱硬化性接著片、及半導體裝置之製造方法 - Google Patents
熱硬化性接著片、及半導體裝置之製造方法 Download PDFInfo
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- TWI702267B TWI702267B TW105109789A TW105109789A TWI702267B TW I702267 B TWI702267 B TW I702267B TW 105109789 A TW105109789 A TW 105109789A TW 105109789 A TW105109789 A TW 105109789A TW I702267 B TWI702267 B TW I702267B
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- H—ELECTRICITY
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Abstract
本發明提供一種可減少半導體晶圓之翹曲的熱硬化性接著片、及半導體裝置之製造方法。於進行切晶前,將熱硬化性接著片貼合至半導體晶圓之研磨面並使其硬化;該熱硬化性接著片含有:包含彈性體之聚合物、包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯的(甲基)丙烯酸酯、1分鐘半衰期溫度為130℃以下之有機過氧化物、及透光性填料。藉此,熱硬化性接著片大幅收縮,而產生與半導體晶圓之翹曲反方向之應力,故而可將半導體晶圓維持為平坦之狀態。
Description
本發明係關於一種為了防止切晶步驟時之龜裂而補強半導體晶圓之熱硬化性接著片、及半導體裝置之製造方法。
於半導體晶片之製造步驟中,切晶(個別化)步驟對半導體晶圓賦予極大之應力。因此,存在於半導體晶圓產生微龜裂而不良率變高之情形。
為了將此種問題防患於未然而提出於即將進行切晶步驟前(進行背面研磨(backgrind)後)貼合補強半導體晶圓之熱硬化性接著片(例如,參照專利文獻1)。
然而,伴隨半導體晶圓之薄型化而半導體晶圓之翹曲量變大,故而存在切晶帶之貼合變困難之情形。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2002-280329號公報
本發明係鑒於此種以往之實際情況而提出者,提供一種可減少半導體晶圓之翹曲之熱硬化性接著片、及半導體裝置之製造方法。
為了解決上述課題,本發明係一種熱硬化性接著片,其係於對半導體晶圓進行切晶時,貼合至該半導體晶圓之研磨面者,其特徵在於含有:聚合物,其包含彈性體;(甲基)丙烯酸酯,其包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯;有機過氧化物,其1分鐘半衰期溫度為130℃以下;及透光性填料。
又,本發明之半導體裝置之製造方法之特徵在於具有以下步驟:研磨步驟,其對半導體晶圓進行研磨;硬化步驟,其於上述半導體晶圓之研磨面貼合熱硬化性接著片並使其硬化而減少上述半導體晶圓之翹曲量;及切晶步驟,其於上述半導體晶圓之熱硬化性接著片之面貼合切晶帶而進行切晶。
本發明之熱硬化性接著片由於摻合有較多之多官能(甲基)丙烯酸酯,故而由熱硬化性接著片之硬化引起之收縮變大,而可減少晶圓之翹曲。因此,藉由使用本發明之熱硬化性接著片,而能以平坦化之狀態製造晶圓,故而可獲得高品質之半導體裝置。
11‧‧‧基材膜層
12‧‧‧熱硬化性接著層
21‧‧‧晶圓
22‧‧‧突起電極
30‧‧‧保護帶
31‧‧‧熱塑性樹脂層
32‧‧‧基材膜層
圖1係表示熱硬化性接著片之概略之剖面圖。
圖2係表示BG帶貼附步驟之概略之剖面圖。
圖3係表示研磨步驟之概略之剖面圖。
圖4係表示熱硬化性接著片貼附步驟之概略之剖面圖。
圖5係表示BG帶剝離步驟之概略之剖面圖。
圖6係表示硬化步驟之概略之剖面圖。
圖7係表示DC帶貼附步驟之概略之剖面圖。
圖8係表示切晶處理步驟之概略之剖面圖。
圖9係表示延伸步驟之概略之剖面圖。
圖10係表示拾取步驟之概略之剖面圖。
圖11係表示安裝步驟之概略之剖面圖。
以下,按照下述順序詳細地對本發明之實施形態進行說明。
1.熱硬化性接著片
2.半導體裝置之製造方法
3.實施例
<1.熱硬化性接著片>
本實施形態之熱硬化性接著片具有:於對半導體晶圓進行切晶時貼合至半導體晶圓之研磨面之熱硬化性接著層,而係於切晶步驟時補強晶圓以防止龜裂之補強片。
圖1係表示熱硬化性接著片之概略之剖面圖。如圖1所示,熱硬化性接著片係積層有基材膜層11、與熱硬化性接著層12。
作為基材膜層11,可使用聚對苯二甲酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜、或由紙、布、不織布等所構成之多孔質基材。
熱硬化性接著層12含有:聚合物,其包含彈性體;(甲基)丙烯酸酯,其包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯;有機過氧化物,其1分鐘半衰期溫度為130℃以下;及透光性填料。再者,於本說明書中,所謂(甲基)丙烯酸酯意指包括丙烯酸酯(acrylate)及甲基丙烯酸酯(methacrylate)。
聚合物包含彈性體,更佳為包含苯氧基樹脂及彈性體。藉此,可對硬化後之熱硬化性接著片賦予適度之可撓性。
作為彈性體,例如可列舉:丙烯酸系彈性體、丁二烯系彈性體、乙烯系彈性體、丙烯系彈性體、苯乙烯系彈性體等,可使用該等之1種或2種以上。於該等中,較佳為使用透明性優異之丙烯酸系彈性體。作為可於市場獲取之丙烯酸系彈性體之具體例,可列舉長瀨化成(股份)之商品名「SG-80H」等。
作為苯氧基樹脂,例如可列舉:茀型苯氧基樹脂、雙酚型苯氧基樹脂、酚醛清漆型苯氧基樹脂、萘型苯氧基樹脂、聯苯型苯氧基樹脂等,可使用該等之1種或2種以上。該等中,較佳為使用表現出較高之耐熱性之茀型苯氧基樹脂。作為可於市場獲取之茀型苯氧基樹脂之具體例,可列舉新日鐵住金化學(股份)之商品名「FX293」等。
又,聚合物之重量平均分子量(Mw)較佳為5000以上且150000以下,更佳為10000以上且80000以下。若重量平均分子量(Mw)過小,則存在片特性下降之傾向,若重量平均分子量過多,則存在與其他
成分之相容性變差之傾向。
又,聚合物之含量較佳為相對於(甲基)丙烯酸酯50質量份為5質量份以上且100質量份以下,更佳為10質量份以上且40質量份以下。無論聚合物之含量過少還是過多,均存在片特性下降之傾向。
(甲基)丙烯酸酯包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯,而以多官能(甲基)丙烯酸酯為主成分。藉此,由熱硬化性接著片之硬化引起之收縮變大,而可減少晶圓之翹曲。
作為多官能(甲基)丙烯酸酯以外之單官能(甲基)丙烯酸酯,例如可列舉:聚伸烷基二醇酯單體、具有直鏈或支鏈烷基之(甲基)丙烯酸烷基酯等。作為聚伸烷基二醇酯單體之具體例,例如可列舉:(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、丙烯酸4-羥基丁酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、聚丁二醇單(甲基)丙烯酸酯、聚乙二醇聚丙二醇單(甲基)丙烯酸酯等,可使用該等之1種或2種以上。
作為屬於多官能(甲基)丙烯酸酯之2官能(甲基)丙烯酸酯,例如可列舉:三環癸烷二甲醇二(甲基)丙烯酸酯、二羥甲基-三環癸烷二(甲基)丙烯酸酯、雙酚AEO改質二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、(甲基)丙烯酸2-羥基-3-丙烯醯氧基丙酯、丙氧化雙酚A二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、聚乙二醇(200)二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、聚乙二醇(400)二(甲基)丙烯酸酯、環己烷二甲醇二(甲基)丙烯酸酯、烷氧化己二醇二(甲基)丙烯酸酯、烷氧化環己烷二甲醇二(甲基)丙烯酸酯、乙氧化(4)雙酚A二(甲基)丙烯酸酯、
乙氧化(10)雙酚A二(甲基)丙烯酸酯、聚乙二醇(600)二(甲基)丙烯酸酯、烷氧化新戊二醇二(甲基)丙烯酸酯、二烷二醇二(甲基)丙烯酸酯、異三聚氰酸EO改質二(甲基)丙烯酸酯等,可使用該等之1種或2種以上。該等中,就反應性、交聯性等方面而言,可較佳地使用三環癸烷二甲醇二(甲基)丙烯酸酯。作為可於市場獲取之2官能(甲基)丙烯酸酯之具體例,可列舉新中村化學工業(股份)之商品名「DCP」(三環癸烷二甲醇二甲基丙烯酸酯,(甲基)丙烯酸當量(分子量/官能基數量)=166)、「A-DCP」(三環癸烷二甲醇二丙烯酸酯,(甲基)丙烯酸當量(分子量/官能基數量)=152)等。
作為屬於多官能(甲基)丙烯酸酯之3官能以上之(甲基)丙烯酸酯,可列舉:異三聚氰酸EO改質三(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、EO改質新戊四醇三(甲基)丙烯酸酯、ε-己內酯改質異氰尿酸三(2-丙烯醯氧基乙基)酯、三羥甲基丙烷三(甲基)丙烯酸酯、ε-己內酯改質(甲基)丙烯酸三(丙烯醯氧基乙基)酯、乙氧化(20)三羥甲基丙烷三(甲基)丙烯酸酯、丙氧化(3)三羥甲基丙烷三(甲基)丙烯酸酯、丙氧化(6)三羥甲基丙烷三(甲基)丙烯酸酯、乙氧化(9)三羥甲基丙烷三(甲基)丙烯酸酯、丙氧化(3)甘油三(甲基)丙烯酸酯、乙氧化(4)新戊四醇四(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二-三羥甲基丙烷四(甲基)丙烯酸酯、二新戊四醇五(甲基)丙烯酸酯、EO改質二新戊四醇五(甲基)丙烯酸酯、具有3官能~9官能之(甲基)丙烯酸胺酯等,可使用該等之1種或2種以上。該等中,就反應性、交聯性等方面而言,可較佳地使用異三聚氰酸EO改質三丙烯酸酯、二新戊四醇六丙烯酸酯。作為可於市場獲取之3官能以上之(甲基)丙烯酸酯之具體例,可列舉東亞合成(股份)之商品
名「M-315」(異三聚氰酸環氧乙烷改質二丙烯酸酯與異三聚氰酸環氧乙烷改質三丙烯酸酯之混合物(異三聚氰酸環氧乙烷改質二丙烯酸酯之含有率為3%~13%),(甲基)丙烯酸當量(分子量/官能基數量)=約100)、新中村化學工業(股份)之商品名「A-DPH」(二新戊四醇六丙烯酸酯,(甲基)丙烯酸當量(分子量/官能基數量)=96)、日本合成化學(股份)之商品名「UV-1700B(分子量/官能數)=222」等。
關於多官能(甲基)丙烯酸酯,即便形式上具有2官能以上之(甲基)丙烯醯基,相對於官能數而分子量明顯較大之化合物亦存在性質與上述單官能丙烯酸酯近似之傾向。因此,多官能(甲基)丙烯酸酯較佳為考慮用分子量除以官能數所得之「(甲基)丙烯酸當量(g/eq)」、或用官能數除以分子量所得之「每單位分子量之官能數」而進行選擇。於考慮(甲基)丙烯酸當量(g/eq)而進行選擇之情形時,較佳為使用(甲基)丙烯酸當量(g/eq)乘以總(甲基)丙烯酸酯中之含有率所得之值之總和即(甲基)丙烯酸當量之加成平均值。又,於考慮每單位分子量之官能數而進行選擇之情形時,較佳為使用每單位分子量之官能數乘以總(甲基)丙烯酸酯中之含有率所得之值之總和即平均交聯密度。
(甲基)丙烯酸酯之(甲基)丙烯酸當量之加成平均值較佳為80g/eq以上且230g/eq以下,更佳為100g/eq以上且200g/eq以下。(甲基)丙烯酸當量之加成平均值越小則收縮率變得越大,(甲基)丙烯酸當量之加成平均值越大則收縮率變得越小。因此,若(甲基)丙烯酸當量之加成平均值過小,則存在與半導體晶圓之密接性等特性變差之傾向,若(甲基)丙烯酸當量之加成平均值過大,則變得難以消除半導體晶圓之翹曲。
(甲基)丙烯酸酯之平均交聯密度較佳為2.0E-03以上且5.0E-02以下,更佳為5.0E-03以上且1.0E-02以下。平均交聯密度越小則收縮率變得越小,平均交聯密度越大則收縮率變得越大。因此,若平均交聯點數過小,則變得難以消除半導體晶圓之翹曲,若平均交聯點數過大,則存在與半導體晶圓之密接性等特性變差之傾向。
又,(甲基)丙烯酸酯之含量較佳為相對於聚合物25質量份為10質量份以上且100質量份以下,更佳為20質量份以上且70質量份以下。若(甲基)丙烯酸酯之含量過少,則變得難以消除半導體晶圓之翹曲,若(甲基)丙烯酸酯之含量過多,則存在片特性下降之傾向。
有機過氧化物之1分鐘半衰期溫度為130℃以下,更佳為80℃以上且120℃以下。若1分鐘半衰期溫度過大,則難以獲得較大之反應速度,若1分鐘半衰期溫度過小,則存在常溫保管性下降之傾向。
作為此種有機過氧化物,例如可列舉:過氧化二月桂醯(1分鐘半衰期溫度:116.4℃)、過氧化二苯甲醯(1分鐘半衰期溫度:130.0℃)、過氧化二(4-甲基苯甲醯)(1分鐘半衰期溫度:128.2℃)、過氧化2-乙基己酸1,1,3,3-四甲基丁酯(1分鐘半衰期溫度:124.3℃)、過氧化二(3,5,5-三甲基己醯)(1分鐘半衰期溫度:112.6℃)、過氧化特戊酸第三丁酯(1分鐘半衰期溫度:110.3℃)、過氧化特戊酸第三己酯(1分鐘半衰期溫度:109.1℃)、過氧化庚酸第三丁酯(1分鐘半衰期溫度:104.6℃)、過氧化新癸酸第三丁酯(1分鐘半衰期溫度:103.5℃)、過氧化新癸酸第三己酯(1分鐘半衰期溫度:100.9℃)、過氧化二碳酸二(2-乙基己基)酯(1分鐘半衰期溫度:90.6℃)、過氧化二碳酸二(4-第三丁基環己基)酯(1分鐘半衰期溫度92.1℃)、
過氧化新癸酸1,1,3,3-四甲基丁酯(1分鐘半衰期溫度:92.1℃)、過氧化二異丁醯(1分鐘半衰期溫度:85.1℃)、過氧化二碳酸二-第二丁酯(1分鐘半衰期溫度:85.1℃)、過氧化二碳酸二-正丙酯(1分鐘半衰期溫度:85.1℃)、過氧化新癸酸異丙苯酯(1分鐘半衰期溫度:85.1℃)等,可使用該等之1種或2種以上。於該等中,就反應性、交聯性等方面而言,可較佳地使用過氧化二月桂醯、過氧化2-乙基己酸1,1,3,3-四甲基丁酯。作為可於市場獲取之過氧化二月桂醯之具體例,可列舉日油(股份)之商品名「PEROYL L」等,作為過氧化2-乙基己酸1,1,3,3-四甲基丁酯之具體例,可列舉日油(股份)之商品名「PEROCTA O」等。
又,有機過氧化物之含量較佳為相對於(甲基)丙烯酸酯50質量份為0.1質量份以上且20質量份以下,更佳為1質量份以上且10質量份以下。若有機過氧化物之含量過少,則反應性下降,若有機過氧化物之含量過多,則存在產品壽命下降之傾向。
透光性填料可使用無機或有機中之任一種,較佳為使用對準中所用之對紅外線具有穿透性之材料。作為對紅外線具有穿透性之材料,例如可列舉:二氧化矽(Silica)、矽、鍺、石英、藍寶石等,可使用該等之1種或2種以上。該等中,就雷射標記之視認性之觀點而言,較佳為使用二氧化矽。
又,透光性填料之含量較佳為相對於聚合物25質量份為50質量份以上且150質量份以下,更佳為80質量份以上且120質量份以下。若透光性填料之含量過少,則存在減少晶圓之翹曲量之效果下降之傾向,若透光性填料之含量過多,則存在密接可靠性下降之傾向。
又,較佳為添加著色劑作為其他添加物。著色劑係使雷射標記部分與其他部分產生對比度差而提高雷射標記視認性。作為此種著色劑,例如可列舉:碳黑、鈦黑、氧化鈦、氧化鐵等,可使用該等之1種或2種以上。該等中,就提高對比度差之觀點而言,較佳為使用碳黑。
又,較佳為添加矽烷偶合劑。作為矽烷偶合劑,可使用(甲基)丙烯酸系、環氧系、胺基系、巰基系、硫基系、脲基系等,但於本實施形態中,可較佳地使用(甲基)丙烯酸系矽烷偶合劑。藉此,可提高有機材料與無機材料之界面之密接可靠性。
又,熱硬化性接著片之波長1000nm時之穿透率較佳為30%以上。若該紅外線穿透率過低,則變得難以進行利用紅外線之對準。
根據本實施形態之熱硬化性接著片,藉由貼合至半導體晶圓之研磨面並使其硬化,可減少半導體晶圓之翹曲量。因此,可容易地進行切晶,而可提高生產性。
<2.半導體裝置之製造方法>
其次,對使用有上述熱硬化性接著片之半導體裝置之製造方法進行說明。本實施形態之半導體裝置之製造方法具有以下步驟:研磨步驟,其對半導體晶圓進行研磨;於半導體晶圓之研磨面貼合熱硬化性接著片並使其硬化而減少半導體晶圓之翹曲量之步驟;及切晶步驟,其於半導體晶圓之熱硬化性接著片之面貼合切晶帶而進行切晶。由於半導體晶圓之翹曲量減少,故而可容易地進行切晶,而可提高生產性。
以下,對具體之半導體裝置之製造方法進行說明。以具體例之形式表示之半導體裝置之製造方法具有:貼附具有接著劑層之保護帶之
保護帶貼附步驟(A)、研磨步驟(B)、熱硬化性樹脂片貼附步驟(C)、保護帶剝離步驟(D)、硬化步驟(E)、黏著帶貼附步驟(F)、切晶處理步驟(G)、延伸步驟(H)、拾取步驟(I)、及安裝步驟(J)。再者,保護帶剝離步驟(D)亦可於熱硬化性樹脂片貼附步驟(C)前進行。
[(A)保護帶貼附步驟]
圖2係表示保護帶貼附步驟之概略之剖面圖。於保護帶貼附步驟中,於形成有突起電極22之晶圓21面貼附保護帶30。關於貼附保護帶30之貼附溫度,就減少空隙、提高晶圓密接性及防止晶圓研削後之翹曲之觀點而言,為25℃以上且100℃以下,較佳為40℃以上且80℃以下。
晶圓21具有形成於矽等半導體表面之積體電路、與稱為凸塊之連接用突起電極22。晶圓21之厚度並無特別限定,較佳為200μm以上且1000μm以下。
作為突起電極22,並無特別限定,例如可列舉:由焊料形成之低熔點凸塊或高熔點凸塊、錫凸塊、銀-錫凸塊、銀-錫-銅凸塊、金凸塊、銅凸塊等。又,突起電極22之高度並無特別限制,較佳為10μm以上且200μm以下。
保護帶30係稱為背面研磨帶(Back Grind Tape)者,且係於之後之研磨處理步驟(B)中保護晶圓免受劃傷、破裂、污染等之影響者。如圖2所示,保護帶30係積層有熱塑性樹脂層31與基材膜層32,並以突起電極22之形成面與熱塑性樹脂層31相接之狀態進行貼合,而突起電極22被埋入至熱塑性樹脂層31中。
作為熱塑性樹脂層31,可列舉:乙烯乙酸乙烯酯共聚物
(EVA:Ethylene Vinyl Acetate)、聚乙烯、聚丙烯、聚醯胺、聚縮醛、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、氟樹脂、聚苯硫醚、聚苯乙烯、ABS樹脂、丙烯酸系樹脂、聚碳酸酯、聚胺酯(Polyurethane)、聚氯乙烯、聚苯醚等,該等可單獨使用1種,亦可併用2種以上。
作為基材膜層32,可使用聚對苯二甲酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜、或由紙、布、不織布等所構成之多孔質基材。
再者,保護帶30並不限定於上述構成,亦可於各層之表面或鄰接之層間形成其他層。
[(B)研磨步驟]
圖3係表示研磨步驟之概略之剖面圖。於研磨步驟中,對保護帶30貼附面之相反面進行研磨處理。將貼附有保護帶30之晶圓21之相反面固定至研削裝置而進行研磨。於該研磨步驟中,藉由研磨而晶圓21之厚度為200μm以下,進而為50μm以下。晶圓21之厚度越小,則晶圓21之翹曲量越大。再者,晶圓21之翹曲量係於平面平台(X、Y軸)上放置晶圓21時之翹曲(Z軸)之最大值。
[(C)熱硬化性接著片貼附步驟]
圖4係表示熱硬化性接著片貼附步驟之概略之剖面圖。於熱硬化性接著片貼附步驟中,於晶圓21之研磨處理面貼附熱硬化性接著片之熱硬化性接著層12。
[(D)保護帶剝離步驟]
圖5係表示保護帶剝離步驟之概略之剖面圖。於保護帶剝離步驟中,剝離保護帶30。
[(E)硬化步驟]
圖6係表示硬化步驟之概略之剖面圖。於硬化步驟中,使熱硬化性接著層12硬化。作為硬化方法及硬化條件,可使用使熱硬化型接著劑硬化之公知之方法。於硬化步驟中,例如可藉由在80~180℃之溫度下固化0.1~5h之時間而使熱硬化性接著層12硬化。藉此,熱硬化性接著層12大幅收縮,而產生與晶圓21之翹曲反方向之應力,故而可將晶圓21維持為平坦之狀態。
[(F)黏著帶貼附步驟]
圖7係表示黏著帶貼附步驟之概略之剖面圖。於黏著帶貼附步驟中,於研磨處理面貼附黏著帶40。黏著帶40係稱為切晶帶(Dicing Tape)者,且係用以於切晶步驟(G)中保護、固定晶圓21並保持至拾取步驟(I)為止之帶。
作為黏著帶40,並無特別限定,可使用公知者。通常,黏著帶40具有黏著劑層、及基材膜層。作為黏著劑層,例如可列舉聚乙烯系、丙烯酸系、橡膠系、胺酯系等黏著劑。又,作為基材膜層,可使用聚對苯二甲酸乙二酯、聚乙烯、聚丙烯、聚酯等塑膠膜、或由紙、布、不織布等所構成之多孔質基材。又,作為黏著帶之貼附裝置及條件,並無特別限定,可使用公知之裝置及條件。
[(G)切晶處理步驟]
圖8係表示切晶處理步驟之概略之剖面圖。於切晶處理步驟中,對貼附有黏著帶40之晶圓21進行切晶處理而獲得單片之半導體晶片。作為切晶方法,並無特別限定,例如可使用利用切晶鋸切削晶圓21而切出等公知之方法。
[(H)延伸步驟]
圖9係表示延伸步驟之概略之剖面圖。於延伸步驟中,例如使貼合有所分割之多個半導體晶片之黏著帶40沿放射方向伸長而擴大各半導體晶片之間隔。
[(I)拾取步驟]
圖10係表示拾取步驟之概略之剖面圖。於拾取步驟中,自黏著帶40之下表面頂出貼合固定於黏著帶40上之半導體晶片而將其剝離,利用吸嘴吸附該剝離之半導體晶片。被拾取之半導體晶片係被收納至晶片托盤、或被搬送至倒裝晶片接合機之晶片搭載嘴。
[(J)安裝步驟]
圖11係表示安裝步驟之概略之剖面圖。於安裝步驟中,例如使用NCF(Non Conductive Film)等電路連接材料將半導體晶片與電路基板進行連接。作為電路基板,並無特別限定,可使用聚醯亞胺基板、玻璃環氧基板等塑膠基板、陶瓷基板等。又,作為連接方法,可使用利用加熱接合機、回焊爐等之公知之方法。
根據本實施形態之半導體裝置之製造方法,將熱硬化性接著片貼合至半導體晶圓之研磨面並使其硬化而減少半導體晶圓之翹曲量,故而可容易地進行切晶,而可提高生產性。又,由於在切晶處理步驟前形成有突起電極之晶圓面之接著劑層硬化而補強突起電極,故而於切晶、拾取、安裝等後續步驟中可減少突起電極之破損。
又,藉由安裝而獲得之半導體裝置由於半導體晶片於研磨面具有熱硬化性接著層,於突起電極形成面具有接著劑層,故而可獲得優異
之可靠性。
[實施例]
<3.實施例>
以下,對本發明之實施例進行說明。
<3.1第1實施例>
於第1實施例中,製作熱硬化性接著片,將該熱硬化性接著片貼合至產生翹曲之附有圖案之晶圓,而對積層體之硬化後之翹曲量進行評價。又,對熱硬化性接著片之硬化速度、密接可靠性、對準標記辨識性、及切晶帶之貼附性進行評價。
[熱硬化性接著片之製作]
摻合下述成分而製備樹脂組成物。使用棒式塗佈機將該樹脂組成物塗佈至經剝離處理之PET(Polyethylene terephthalate),於80℃之烘箱中乾燥3分鐘而製作厚度為20μm之熱硬化性接著片(罩蓋剝離PET(25μm)/熱硬化性接著片(20μm)/基底剝離PET(50μm))。
EX293:茀型苯氧基樹脂(新日鐵住金化學(股份)製造)
YP-50:雙酚A型苯氧基樹脂(新日鐵住金化學(股份)製造)
SG-80H:丙烯酸系彈性體(長瀨化成(股份)製造)
RKB-5515B:丁二烯系彈性體(RESINOUS KASEI(股份)製造)
DCP:三環癸烷二甲醇二甲基丙烯酸酯(新中村化學工業(股份),(甲基)丙烯酸當量(分子量/官能基數量)=166)
A-DCP:三環癸烷二甲醇二丙烯酸酯(新中村化學工業(股份),(甲基)丙烯酸當量(分子量/官能基數量)=152)
M-315:異三聚氰酸環氧乙烷改質二丙烯酸酯與異三聚氰酸環氧乙烷改質三丙烯酸酯之混合物(異三聚氰酸環氧乙烷改質二丙烯酸酯之含有率為3%~13%)(東亞合成(股份)製造,(甲基)丙烯酸當量(分子量/官能基數量)=144)
A-DPH:二新戊四醇六丙烯酸酯(新中村化學工業(股份),(甲基)丙烯酸當量(分子量/官能基數量)=96)
UV-1700B:丙烯酸胺酯(日本合成化學(股份),(甲基)丙烯酸當量(分子量/官能基數量)=222)
4-HBA:丙烯酸4-羥基丁酯(新中村化學工業(股份),(甲基)丙烯酸當量(分子量/官能基數量)=144)
CEL-2021P:脂環式環氧樹脂(Daicel(股份))
JER1031S:特殊多官能環氧樹脂(三菱化學(股份))
PEROYL L:過氧化二月桂醯(日油(股份)製造,1分鐘半衰期溫度:116.4℃)
PEROCTA O:過氧化2-乙基己酸1,1,3,3-四甲基丁酯(日油(股份)製造,1分鐘半衰期溫度:116.4℃)
Perhexa V:4,4-雙(過氧化第三丁基)戊酸正丁酯(日油(股份)製造,1分鐘半衰期溫度:116.4℃)
TD-2131:酚系酚醛清漆(DIC(股份))
U-CAT5002:DBU系四苯基硼酸鹽(SAN-APRO(股份))
Aerosil R202:二氧化矽(日本Aerosil(股份))
#20:碳黑
KBM-5103:丙烯酸系矽烷偶合劑(Shin-Etsu Silicones(股份))
KBM-403:環氧系矽烷偶合劑(Shin-Etsu Silicones(股份))
[積層體之製作]
藉由加壓機將厚度為20μm之熱硬化性接著片貼合至附有圖案之晶圓上,於130℃、1h之條件下進行固化而獲得積層體。
附有圖案之晶圓係使用厚度為200μm之8英吋者。又,附有圖案之晶圓之平均翹曲量(樣品數量:10)為4mm。再者,附有圖案之晶圓之翹曲量係設為於平面平台(X、Y軸)上放置附有圖案之晶圓時的翹曲(Z軸)之最大值。
[積層體之翹曲量之評價]
與附有圖案之晶圓之翹曲量之測定同樣地,積層體之翹曲量係設為於平面平台(X、Y軸)上放置積層體時之翹曲(Z軸)之最大值。將積層體之翹曲量未達1.0mm者評價為「◎」,將積層體之翹曲量為1.0mm以上且未達1.5mm者評價為「○」,將積層體之翹曲量為1.5mm以上且未達2.5mm者評價為「△」,將積層體之翹曲量為2.5mm以上者評價為「×」。
[熱硬化性接著片之硬化速度之評價]
使用傅立葉變換紅外分光光度計(FT/IR-4100,日本分光公司製造),藉由穿透法測定於130℃、1h之條件下進行固化所得之厚度為20μm之熱硬化性接著片的樣品。根據未硬化之熱硬化性接著片之丙烯酸系單體(不飽和基)之測定強度、與完全硬化後之熱硬化性接著片之丙烯酸系單體(不飽和基)的測定強度之比而算出熱硬化性接著片之樣品之反應率。將熱硬化性接著片之反應率為80%以上者評價為「◎」,將熱硬化性接著片之反應
率為50%以上且未達80%者評價為「○」,將熱硬化性接著片之反應率未達50%者評價為「×」。
[熱硬化性接著片之密接可靠性之評價]
對於130℃、1h之條件下進行固化所得之厚度為20μm之熱硬化性接著片的初始之接著強度、及溫度85℃、濕度85%、1000h之可靠性試驗後之熱硬化性接著片之接著強度進行測定。接著強度係依據JIS K 6854,以剝離速度50mm/min進行90度剝離試驗,將剝下所需之力作為剝離強度進行測定。將可靠性試驗後之接著強度為初始之接著強度之90%以上者評價為「◎」,將可靠性試驗後之接著強度為初始之接著強度之80%以上且未達90%者評價為「○」,將可靠性試驗後之接著強度未達初始之接著強度之80%者評價為「×」。
[熱硬化性接著片之對準標記辨識性之評價]
對於130℃、1h之條件下進行固化所得之厚度為20μm之熱硬化性接著片測定紅外線(波長:1μm)之穿透率。將IR穿透率為50%以上者評價為「◎」,將IR穿透率為30%以上且未達50%者評價為「○」,將IR穿透率未達30%者評價為「×」。
[切晶帶之貼附性之評價]
將切晶帶層疊至於130℃、1h之條件下進行固化所得之積層體之熱硬化性接著層側。目視切晶帶,將無法確認到氣泡之情形評價為「○」,將可確認到氣泡之情形評價為「×」。
[實施例1]
摻合5質量份之茀型苯氧基樹脂(FX293)、20質量份之丙烯酸系彈性
體(SG-80H)、50質量份之3官能丙烯酸酯(M-315)、5質量份之有機過氧化物(PEROYL L)、100質量份之二氧化矽(Aerosil R202)、2質量份之丙烯酸系偶合劑(KBM-5103)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物從而製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎,切晶帶之貼附性之評價為○。
[實施例2]
摻合50質量份之2官能丙烯酸酯(A-DCP)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為152且平均交聯密度為6.6E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[實施例3]
摻合50質量份之2官能甲基丙烯酸酯(DCP)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為166且平均交聯密度為6.0E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[實施例4]
摻合50質量份之多官能甲基丙烯酸酯(A-DPH)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為96且平均交聯密度為1.0E-02之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為◎。
[實施例5]
摻合50質量份之多官能丙烯酸胺酯(UV-1700B)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為222且平均交聯密度為4.5E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為◎。
[實施例6]
摻合20質量份之多官能甲基丙烯酸酯(A-DPH)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值
為96且平均交聯密度為1.0E-02之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為○。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為◎。
[實施例7]
摻合70質量份之多官能甲基丙烯酸酯(A-DPH)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為96且平均交聯密度為1.0E-02之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為○,密接可靠性之評價為○,對準標記辨識性之評價為◎。
[實施例8]
摻合30質量份之3官能丙烯酸酯(M-315)、18質量份之2官能甲基丙烯酸酯(DCP)、2質量份之單官能丙烯酸酯(4-HBA)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為125且平均交聯密度為6.7E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[實施例9]
摻合3質量份之茀型苯氧基樹脂(FX293)、2質量份之雙酚A型苯氧基樹脂(YP-50)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為○。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為◎。
[實施例10]
不摻合茀型苯氧基樹脂(FX293)而摻合25質量份之丙烯酸系彈性體(SG-80H)從而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為○。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[實施例11]
摻合15質量份之丙烯酸系彈性體(SG-80H)、5質量份之丁二烯系彈性體(RKB-5515B)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速
度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為○。
[實施例12]
摻合20質量份之丁二烯系彈性體(RKB-5515B)以代替丙烯酸系彈性體(SG-80H)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為○。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為×。
[實施例13]
摻合150質量份之二氧化矽(Aerosil R202)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為◎。
[實施例14]
摻合50質量份之二氧化矽(Aerosil R202)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表1所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為○。又,熱硬化性接著片之硬化速
度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[實施例15]
於實施例1之摻合中,摻合1質量份之碳黑(#20)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為○。
[實施例16]
摻合5質量份之PEROCTA O以代替PEROYL L而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[實施例17]
摻合4質量份之PEROYL L、1質量份之Perhexa V而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為◎。又,熱硬化性接著片之硬化速度之評價為△,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[比較例1]
摻合50質量份之脂環式環氧樹脂(CEL-2021P)、5質量份之酚系酚醛清漆(TD-2131)、5質量份之DBU系四苯基硼酸鹽(U-CAT5002)、2質量份之環氧系矽烷偶合劑(KBM-403)以代替3官能丙烯酸酯(M-315)、PEROYL L、及丙烯酸系矽烷偶合劑(KBM-5103)而製備樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為△。又,熱硬化性接著片之硬化速度之評價為×,密接可靠性之評價為◎,對準標記辨識性之評價為○。
[比較例2]
摻合50質量份之特殊多官能環氧樹脂(JER1031S)、5質量份之酚系酚醛清漆(TD-2131)、5質量份之DBU系四苯基硼酸鹽(U-CAT5002)、2質量份之環氧系矽烷偶合劑(KBM-403)以代替3官能丙烯酸酯(M-315)、PEROYL L、及丙烯酸系矽烷偶合劑(KBM-5103)而製備樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為△。又,熱硬化性接著片之硬化速度之評價為×,密接可靠性之評價為◎,對準標記辨識性之評價為○,切晶帶之貼附性之評價為×。
[比較例3]
摻合50質量份之單官能丙烯酸酯(4-HBA)以代替3官能丙烯酸酯(M-315)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為
144且平均交聯密度為6.9E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為×。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為○,對準標記辨識性之評價為◎,切晶帶之貼附性之評價為×。
[比較例4]
摻合47.5質量份之3官能丙烯酸酯(M-315)、2.5質量份之單官能丙烯酸酯(4-HBA)而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為102且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為△。又,熱硬化性接著片之硬化速度之評價為◎,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
[比較例5]
摻合5質量份之Perhexa V以代替PEROYL L而製備(甲基)丙烯酸當量(分子量/官能基數量)之加成平均值為144且平均交聯密度為7.1E-03之樹脂組成物,除此之外,以與實施例1相同之方式製作熱硬化性接著片。
如表2所示,將熱硬化性接著片貼合至附有圖案之晶圓並使其硬化所得之積層體之翹曲量的評價為△。又,熱硬化性接著片之硬化速度之評價為×,密接可靠性之評價為◎,對準標記辨識性之評價為◎。
於如比較例1、2般使用環氧系熱硬化性黏合劑之情形時,無法獲得較高之硬化速度,與晶圓之翹曲反方向之應力較小,而無法大幅減少晶圓之翹曲量。又,於如比較例3般摻合有單官能(甲基)丙烯酸酯之情形時,與晶圓之翹曲反方向之應力亦較小,而無法大幅減少晶圓之翹曲量。又,於如比較例4般未包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯之情形時,與晶圓之翹曲反方向之應力亦較小,而無法大幅減少晶圓之翹曲量。又,於如比較例5般摻合有1分鐘半衰期溫度超過130℃之有機過氧化物之情形時,與晶圓之翹曲反方向之應力亦較小,而無法大幅減少晶圓之翹曲量。
另一方面,於如實施例1~17般摻合有包含彈性體之聚合物、包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯的(甲基)丙烯酸酯、及1分鐘半衰期溫度為130℃以下之有機過氧化物之情形時,獲得較大之硬化速度,與晶圓之翹曲反方向之應力較大,而可大幅減少晶圓之翹曲量。
又,若將除多官能(甲基)丙烯酸酯以外之成分相同之實施例1~實施例5進行對比,則可知因(甲基)丙烯酸當量之加成平均值為100~200g/eq之範圍而翹曲量、硬化速度、密接性、及對準標記視認性之評價全部變得良好。
又,若將成分相同而多官能(甲基)丙烯酸酯之摻合量不同之實施例4、實施例6及實施例7進行對比,則可知因多官能(甲基)丙烯酸酯之摻合量為30質量份以上而積層體之翹曲量之評價變良好。
11‧‧‧基材膜層
12‧‧‧熱硬化性接著層
Claims (16)
- 一種熱硬化性接著片,其係於對半導體晶圓進行切晶時,貼合至該半導體晶圓之研磨面者,該熱硬化性接著片含有:聚合物,其包含彈性體;(甲基)丙烯酸酯,其包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯;有機過氧化物,其1分鐘半衰期溫度為130℃以下;及透光性填料。
- 如申請專利範圍第1項之熱硬化性接著片,其中,上述(甲基)丙烯酸酯之(甲基)丙烯酸當量之加成平均值為80g/eq以上且230g/eq以下。
- 如申請專利範圍第1項之熱硬化性接著片,其中,上述(甲基)丙烯酸酯之含量相對於上述聚合物25質量份為20質量份以上且70質量份以下。
- 如申請專利範圍第2項之熱硬化性接著片,其中,上述(甲基)丙烯酸酯之含量相對於上述聚合物25質量份為20質量份以上且70質量份以下。
- 如申請專利範圍第1至4項中任一項之熱硬化性接著片,其中,上述聚合物進而包含苯氧基樹脂。
- 如申請專利範圍第3或4項之熱硬化性接著片,其中,上述聚合物進而包含苯氧基樹脂。
- 如申請專利範圍第1或2項之熱硬化性接著片,其中,上述透光性填料之含量相對於上述聚合物25質量份為50質量份以上且150質量份以下。
- 如申請專利範圍第3或4項之熱硬化性接著片,其中,上述透光性填 料之含量相對於上述聚合物25質量份為50質量份以上且150質量份以下。
- 如申請專利範圍第5項之熱硬化性接著片,其中,上述透光性填料之含量相對於上述聚合物25質量份為50質量份以上且150質量份以下。
- 如申請專利範圍第1或2項之熱硬化性接著片,其中,上述聚合物包含茀型苯氧基樹脂、與丙烯酸系彈性體。
- 如申請專利範圍第3或4項之熱硬化性接著片,其中,上述聚合物包含茀型苯氧基樹脂、與丙烯酸系彈性體。
- 如申請專利範圍第5項之熱硬化性接著片,其中,上述聚合物包含茀型苯氧基樹脂、與丙烯酸系彈性體。
- 如申請專利範圍第7項之熱硬化性接著片,其中,上述聚合物包含茀型苯氧基樹脂、與丙烯酸系彈性體。
- 如申請專利範圍第1或2項之熱硬化性接著片,其中,上述有機過氧化物包含過氧化二月桂醯。
- 一種半導體裝置之製造方法,其具有以下步驟:研磨步驟,其對半導體晶圓進行研磨;熱硬化性接著片貼附步驟,其於上述半導體晶圓之研磨面貼附熱硬化性接著片;硬化步驟,其使上述熱硬化性片硬化而減少上述半導體晶圓之翹曲量;切晶帶貼附步驟,其於上述半導體晶圓之熱硬化性接著片之面貼附切晶帶;及 切晶處理步驟,其對貼附有切晶帶之晶圓進行切晶處理而獲得單片之半導體晶片;上述熱硬化性接著片含有:聚合物,其包含彈性體;(甲基)丙烯酸酯,其包含總(甲基)丙烯酸酯中超過95wt%之多官能(甲基)丙烯酸酯;有機過氧化物,其1分鐘半衰期溫度為130℃以下;及透光性填料。
- 如申請專利範圍第15項之半導體裝置之製造方法,其中,於上述研磨步驟中進行研磨直至厚度成為200μm以下。
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