TWI694539B - 基板保持裝置及其製造方法 - Google Patents
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Abstract
提供一種即使將凸部之頂部施以研磨,凸部與基板之間介存顆粒的疑慮增高的問題仍可抑制,加工不會那麼困難的基板保持裝置。
基板保持裝置100具備:具有在上面開口之通氣路11的平板狀基體10;及從基體10上面突出形成的複數個凸部20。凸部20係至少上部呈截圓錐狀,其底角在70°以上85°以下。
Description
本發明係關於將半導體晶圓等基板吸附保持在基體的基板保持裝置及其製造方法。
傳統上,在半導體製造系統中,為了保持基板而使用一種具備基體的基板保持裝置,基體的上面則形成有支持基板用的多數個凸部(銷),與真空抽吸裝置連接的通氣路之開口則設在基體的上面。凸部係藉由噴砂加工所形成,因其製造程序的關係,凸部會不可避免地形成底角呈45°左右的截圓錐狀,而無法形成圓柱狀(參照例如專利文獻1)。
若有顆粒介存於這種凸部與基板之間時,基板會發生局部性隆起,使基板表面精度惡化。近年來,半導體正朝向微細化及高密度化發展,若基板表面精度惡化,就會發生例如曝光時焦點對不準、曝光圖案模糊、形成於基板的電路圖案發生短路等,而導致良品率低下的問題。
另外,也有人提案藉由在凸部的頂面配設凹溝,以減少與基板的接觸面積,俾降低顆粒夾入的發生頻率的方法(參照例如專利文獻2)。
[專利文獻1]日本特開平10-242255號公報
[專利文獻2]日本特開2012-009720號公報
然而,凸部與基板的接觸面積若減少時,屬於和基板接觸部分的頂部容易磨耗,表面粗度會惡化,因此,對頂部施行研磨。但,由於凸部係為底角呈45°左右的截圓錐狀,故每次頂部研磨時,接觸面積就會大幅增加。使顆粒介存於凸部與基板之間的疑慮升高。
再者,要在凸部頂面形成凹溝非常困難,經濟上也很不利。
因而,本發明之目的即為提供一種即使對凸部的頂部施加研磨,仍可抑制顆粒介存於凸部與基板之間的疑慮升高的問題,使加工不至於那麼困難的基板保持裝置及其製造方法。
本發明的基板保持裝置係為具備:具有在上面開口之通氣路的平板狀基體、及從前述基體之上面突出形成的複數個凸部,其特徵為:前述凸部係至少上部呈截圓錐狀,其底角為70°以上85°以下。
若依本發明的基板保持裝置,凸部並非習知的底角45°左右的和緩型截圓錐狀,而是底角為70°以上
85°以下陡峻型截圓錐狀。因而,即使將頂部研磨,仍可抑制凸部與基板接觸面積的增加,可謀求降低顆粒附著在研磨後之凸部頂面的可能性。
由底角為70°以上85°以下的陡峻型截圓錐狀所形成的凸部係可利用雷射加工來形成,相較於在凸部頂面形成凹溝等的方式,加工很容易。另外,本發明中,所謂截圓錐狀,並非數學上嚴謹意義的截圓錐狀,而是包含角部帶圓弧、側周面有凹凸等整體呈大致截圓錐狀體的概念。此外,也包含下部與上部之間有階差的形狀。
再者,凸部只要是至少上部為底角70°以上85°以下的截圓錐狀即可。例如,凸部也可為其整體呈底角70°以上85°以下的截圓錐狀。此外,凸部也可由上部為底角70°以上85°以下的截圓錐狀,其下部為底角未達70°的截圓錐狀組成者。
本發明的基板保持裝置中,前述凸部的高度相對於基板與前述凸部接觸面的最大寬度之比為1以上,前述基板與前述凸部接觸面積的總和相對於前述基板的面積之比為0.30%以下,相接近的前述凸部間的中心間隔為3.0mm以下。
在此情況下,由後述的實施例可以明瞭,只要符合這些條件,即可謀求介存於凸部與基板間之顆粒的減少,而得以謀求防止基板表面精度的惡化。
本發明基板保持裝置之製造方法,其特徵為:藉由雷射加工在基體的上面,形成上部具有至少底角
為70°以上85°以下之截圓錐狀的複數個凸部。
若依本發明之基板保持裝置之製造方法,凸部並非習知之底角為45°左右的和緩型截圓錐狀,而是底角為70°以上85°以下的陡峻型截圓錐狀。從而,即使將頂部加以研磨,仍可抑制凸部與基板之接觸面積的增加,可謀求減少顆粒附著在研磨後之凸部頂面的可能性。
而且,由底角為70°以上85°以下的陡峻型截圓錐狀構成的凸部係藉雷射加工形成,故相較於凸部頂面形成凹溝的方式等,加工很容易。
本發明基板保持裝置之製造方法中,較佳為,藉噴砂加工在基體的上面形成底角45°以上70°以下的複數個截圓錐形凸狀部,再藉雷射加工在前述複數個截圓錐形凸狀部的上部形成底角為70°以上85°以下的截圓錐形狀,俾形成前述複數個凸部。
在此情況下,相較於用雷射加工形成整個凸部的情況,可以短時間且以低廉方式形成凸部。
10‧‧‧基體
11‧‧‧通氣路
11a‧‧‧開口
20、20A、20B‧‧‧凸部
30‧‧‧環狀凸部
41‧‧‧凸狀部
100、100A‧‧‧基板保持裝置
O‧‧‧基板上面的中心
W‧‧‧基板
圖1為本發明實施形態的基板保持裝置的示意性剖面圖。
圖2為基板保持裝置的示意性俯視圖。
圖3為本發明實施形態變化例的基板保持裝置的示意性剖面圖。
圖4為用以說明基板保持裝置之一製造方法例的局部示意性剖面圖。
圖5為實施例1之一凸部例的廓形(profile)。
(基板保持裝置)
首先,參照圖1及圖2,就本發明實施形態的基板保持裝置100加以說明。
基板保持裝置100具備用以吸附保持基板(晶圓)W的大致平板狀基體10。基體10係以陶瓷燒結體形成大致平板狀。基體10除了呈大致圓板狀外,也可為多角形板狀或橢圓形板狀等各種形狀。
基體10在上面(表面)形成有開口狀通氣路11。通氣路11係與通過基體10的內部或延伸在基體10之下面(背面)路徑連通。通氣路11係連接於真空抽吸裝置(圖示省略)。
參照圖2,本實施形態中,在基體10的上面存在有複數個通氣路11的開口11a,具體而言為5個,其中的1個位於基體10上面之中心O。但,開口11a的個數及配置不受此限,位於基體10之中心O的開口也可不設置。
基體10在其上面突出形成有多數個凸部20。多數個凸部20除了可以三角格子狀、正方格子狀等其他樣態規則地配置外,也可在圓周方向或徑向以產生局部性疏密差的方式不規則地局部性配置。
再者,基體10自其外周緣部的上面突出形成有環狀凸部30。環狀凸部30係用以支持基板W之外周緣部的下面。
另外,圖式中,為了使基板保持裝置100的構成明確化,通氣路11、及凸部20及環狀凸部30等係經修整過,各構成要素的剖面圖中,除了長寬比外,寬度或高度與相互間隔的比率等,圖面所示者和實際上有差異。另外,基體10上也可形成未圖示的提升銷孔(lift pin hole)、肋條等。
參照圖1,凸部20在此處係整體上呈截圓錐狀。其底角為70°以上85°以下,較佳為75°以上80°以下。如此陡峻型截圓錐狀凸部20可藉雷射加工將雷射光照射在基體10的上面而形成。
雷射加工係使用搭載有雷射振盪器的雷射加工機進行加工,關於雷射加工機的種類,並無特別限定。雷射的種類方面,可舉出固體雷射、液體雷射、氣體雷射、半導體雷射、光纖雷射等,但哪一種都可使用。
另外,本發明中,所謂截圓錐狀,並非指數學上嚴謹意義的截圓錐狀,而是包含角部帶有圓弧、側周面有凹凸等整體上大致呈截圓錐狀體的概念。
其次,本發明中,經雷射加工的所謂「凸部20的底角」,其定義為:凸部20的垂直剖面或側面圖與頂邊、底邊及剖面積或面積假定為相同的等邊梯形(equilateral trapezoid)時的底角。另外,各凸部20的形狀也參差不一,而且,1個凸部20中,其形狀也依照垂直剖面的切斷面方向或側面圖的側視方向而有不同。因而,本發明中的凸部20的底角係指複數個凸部20的平均值。
而且,相對於基板W的面積,基板W與凸部
20接觸面積的總和之比為0.30%,更佳為0.15%以下。
各凸部20各自的頂部面積,即和基板W接觸的面積,較佳為0.03mm2以下,更佳為0.001mm2以下。另外,凸部20的基端部也可在其與基體10的上面之間帶有圓弧等。
接著,凸部20係朝圓周方向及徑向保持間隔地配置成以基體10之中心O為中心的同心圓狀。最接近的凸部20之間的中心間隔較佳為3.0mm以下,更佳為2.0mm以下。凸部20除了以三角格子狀、正方格子狀等其他樣態規則地配置外,也可朝圓周方向或徑向局部產生疏密差的方式局部地不規則配置。
凸部20的高度,亦即,自基體10的上面突出之量,較佳為相對於基板W與凸部20接觸面的最大寬度之比達1以上,例如50μm至200μm。凸部20之頂部(與基板接觸的部分)的表面粗度Ra為例如0.01μm至0.50μm。
本實施形態中,基板W與凸部20接觸面積的總和,相對於基板W的面積之比為0.15%以下,相較於傳統技術最小為0.3%的情形,顯然很小。因此,顆粒附著在各凸部20之頂面的可能性得以減少。
如此,當基板W與凸部20的接觸面積小時,因凸部20的頂部容易磨耗,故頂部的研磨頻率有增高的可能性。本實施形態中,因凸部20係呈底角70°以上85°以下的陡峻型截圓錐狀,故即使將頂部加以研磨,仍可抑制和基板W接觸面積的增加,可謀求減少顆粒附著於研磨後凸部20之頂面的可能性。以往的凸部因係為底角
45°左右的和緩型截圓錐狀,所以若將頂部加以研磨,則和基板W的接觸面積會大幅改變。
再者,因凸部20為陡峻型截圓錐狀,基板W與基體10之間的空間較上述專利文獻1所載的習知情況為大,故充滿該空間的氣體量較多,反應性得以提高。此外,該空間若為真空時,可將基板W藉由基體10更堅固地進行真空吸附。
其次,凸部20的間隔為3.0mm以下,相較於以往最小為4.0mm的情況,甚窄。因此,可抑制基板W在凸部20之間產生撓曲。
由於這些特點,本實施形態中,相較於以往技術,可謀求基板W之面精度的增高,並可謀求良品率的提升。
最接近的凸部20之間隔以相同為佳。藉此,可進一步抑制基板W的撓曲。但,最接近的凸部20之間隔也可不相同。
不過,屬於陡峻型截圓錐柱狀的凸部20的頂面面積若縮小時,因基端部的剛性較低,凸部20缺損的疑慮會增高。
因此,如圖3所示,較佳為將至少一部分凸部20A設成底角角度較大的和緩型截圓錐狀。這種和緩型截圓錐狀的凸部20A,也可用噴砂加工形成。
藉此構成,凸部20A的剛性得以提高,可謀求防止凸部20A缺損而致基板W撓曲增加的疑慮。
例如,用真空抽吸裝置開始抽吸後,在最起
初階段,基板W所抵接的凸部20A支數較少,會有巨大的壓力作用在此等凸部20A,故只要將位於通氣路11周邊的凸部20A的基端部之剖面積加大即可。然後,基板W隨後依序抵接的凸部20會和之前抵接的凸部20A一起抵接,因作用在各凸部20的壓力會分散並減小,故亦可設成陡峻型截圓錐狀,而剛性可不必那麼高。
此外,例如圖4所示,凸部也可以是由下部呈底角為45°以上70°以下的和緩型截圓錐狀,上部呈底角為70°以上85°以下的陡峻型截圓錐狀所組成的凸部20B。
因上部的底角為70°以上85°以下,故即使將頂部研磨,仍可抑制凸部與基板W接觸面積的增加。
(基板保持裝置的製造方法)
基板保持裝置100的基體10係以例如下述的製程製作。亦即,從原料粉末製成大致圓板狀的成形體,藉由對該成形體施以燒成而製得大致圓板狀的燒結體。原料粉末為例如高純度(例如純度97%以上)的碳化矽粉末,並可依需要使用其中添加有適量燒結助劑的混合原料粉末。此外,也可使用氮化鋁粉末、氧化鋁粉末等其他陶瓷粉末作為原料粉末。
而且,藉由照射雷射光的雷射加工,在該燒結體上面形成複數個凸部20。再者,藉噴砂加工使該燒結體形成通氣路11,且藉噴砂加工形成環狀凸部30等。另外,環狀凸部30也可藉雷射加工來形成。再進一步,藉研磨加工對複數個凸部20及環狀凸部30的頂面施加研磨。藉此即可製得基體10。
另外,如圖4所示的凸部20B,也可在藉噴砂加工而在燒結體(基體10)的上面形成底角為45°以上70°以下的複數個和緩型截圓錐形凸狀部41(以2點鏈線表示)後,再藉雷射加工在這些截圓錐形凸狀部41的上部形成底角為70°以上85°以下的截圓錐狀。
以下,具體舉出實施例及比較例,詳細說明本發明。
[實施例1至10]
實施例1至10中,準備平均粒徑為10μm的SiC粉末(H.C.Starck公司製的UF-10)作為原料粉末。然後,在其中添加石墨2重量%作為燒結助劑。
然後,將該原料粉末衝壓成型後,施行CIP成形,並進行常壓燒結。接著,將所得的燒結體施以平面研磨加工,獲得基體10。
接著,藉光纖雷射加工機經調整輸出50W、焦點110nm、光點徑30μm、頻率80kHz、進給速度48m/min等照射條件後,對該基體10的上面照射雷射光,而形成60度交錯狀的多數凸部20。
基板W與凸部20接觸面積的總和相對於依此方式形成的凸部20之底角、高度、頂面直徑、中心軸間的間距、及基板W的面積之比(以下,稱為接觸面積比)揭示於表1。
依實施例1的方式形成的凸部20的一個廓形例揭示於圖5。該廓形係以3維表面性狀測定器測量的剖
面廓形。
另外,實施例2、4中,係分別將實施例1、3之凸部20的頂部各切削0.02mm。
然後,關於實施例1至10方面,係在凸部20之頂面載置基板W,並測定該基板W的平坦度,測定結果揭示於表1。
再就實施例1至10測量附著於基板W背面(和凸部20的接觸面)的顆粒個數。測量結果揭示於表1。
實施例1至8中,接觸面積比為0.10%至0.24%,甚小;基板W的平坦度則為0.02μm至0.05μm,甚良好;顆粒個數未達100個,甚少。
實施例9中,接觸面積比為0.07%,甚小;顆粒個數為80個。此外,基板W的平坦度為0.32μm,不怎麼良好。
實施例10中,接觸面積比為0.40%,稍大了些,基板W的平坦度為0.05μm,甚為良好。但,顆粒個數為187個,稍多了些。
[實施例11]
實施例11中,係以和實施例1至10同樣的方式製作基體10。
然後,對該基體10的上面貼附遮罩,使凸部可配置成孔徑0.1mm、間距3.00mm、60度交錯狀,再進行噴砂加工。
噴砂加工係在截圓錐形凸狀部41的中心高度達0.20mm時結束。然後剝除遮罩,用純水對被加工物作
超音波洗淨。
接著,對以噴砂加工形成的各凸狀部41照射雷射光,再藉雷射加工進行追加加工,而形成多數個凸部20B。
依此方式形成的凸部20B的底角、高度、頂面直徑、中心軸間的間距及接觸面積比係揭示於表1。另外,表1的底角欄中,最初的45°係表示凸部20B之底部的底角,次一個70°係表示以雷射加工形成在凸部20B上側之凸部的底角。
接著,以和實施例1至10同樣的方式求取基板W的平坦度、及顆粒的個數。這些結果均揭示於表1。
實施例11中,接觸面積比小到0.23%,基板W的平坦度為0.05μm,甚為良好,顆粒的個數則為95個,甚少。
[比較例1、2]
比較例1、2中,係和實施例1至10同樣地製作基體10。
然後,在該基體10的上面貼附遮罩,使凸部可配置成孔徑0.40mm、間距3.00mm、60度交錯狀,並實施噴砂加工。
噴砂加工係在凸部中心的突起高度達0.20mm時結束。然後,剝除遮罩,用純水將被加工物實施超音波洗淨。
其次,比較例2中,再將依此方式形成的凸部的頂部分別切削0.02mm。
依此方式形成的凸部的底角、高度、頂面直徑、中心軸間的間距、及接觸面積比均揭示於表2。
然後,和實施例1至10同樣地求得基板W的平坦度及顆粒的個數。這些結果揭示於表2。
比較例1、2中,接觸面積比大到1.60%、1.93%,基板W的平坦度為0.05μm,雖甚良好,但顆粒個數達267個、258個,相當多。
10‧‧‧基體
11‧‧‧通氣路
11a‧‧‧開口
20‧‧‧凸部
30‧‧‧環狀凸部
100‧‧‧基板保持裝置
W‧‧‧基板
Claims (3)
- 一種基板保持裝置的製造方法,其特徵為:藉雷射加工在基體的上面形成複數個凸部,該複數個凸部係於上部具有至少底角為70°以上85°以下的截圓錐狀。
- 如請求項1之基板保持裝置的製造方法,其中,藉噴砂加工在基體的上面,形成底角為45°以上70°以下的複數個截圓錐形凸狀部,藉雷射加工在前述複數個截圓錐形凸狀部的上部,形成底角為70°以上85°以下的截圓錐狀,以形成前述複數個凸部。
- 如請求項1或2之基板保持裝置的製造方法,其中,前述凸部的高度相對於基板與前述凸部接觸面的最大寬度之比為1以上,前述基板與前述凸部之接觸面積的總和相對於前述基板的面積之比為0.30%以下,相接近之前述凸部間的中心間隔為3.0mm以下。
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- 2017-05-25 TW TW106117316A patent/TWI694539B/zh active
- 2017-05-26 CN CN201710384857.1A patent/CN107437524B/zh active Active
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Also Published As
Publication number | Publication date |
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TW201806070A (zh) | 2018-02-16 |
JP6650345B2 (ja) | 2020-02-19 |
US20170345702A1 (en) | 2017-11-30 |
KR102123889B1 (ko) | 2020-06-17 |
KR20170134216A (ko) | 2017-12-06 |
JP2017212374A (ja) | 2017-11-30 |
US10755959B2 (en) | 2020-08-25 |
CN107437524B (zh) | 2021-04-27 |
CN107437524A (zh) | 2017-12-05 |
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