TWI683168B - Pixel structure and manufacturing method thereof - Google Patents

Abstract

A pixel structure includes a first electrode and a pixel defining layer disposed on the first electrode. The pixel defining layer has a pixel opening includes a central portion, a first portion and a second portion. The first portion, the central portion and the second portion are sequentially arranged in a first direction. The first portion has a first width W1 in a second direction. The second portion has a second width W2 in the second direction. The central portion has a third width W3 in the second direction. W3<W1 and W3<W2. The first portion has a first length L1 in the first direction. The second portion has a second length L2 in the first direction. The central portion has a third length L3 in the first direction, and 20%

× 100%

Description

Pixel structure and its manufacturing method

The invention relates to a pixel structure, and in particular to a pixel structure with pixel openings of different widths.

Organic light emitting diode (Organic light emitting diode, OLED) has advantages such as long life, small size, high shock resistance, low heat generation and low power consumption, so it has been widely used as an indicator or light source in households and various devices .

Ink Jet Printing (IJP) technology can improve the material utilization rate in the OLED process to reduce the process cost, but before the inkjet coating needs to form a corresponding pixel setting bank (bank) to define Each pixel area. However, when increasing the resolution, the pixel structure will be reduced. In this way, in addition to improving the accuracy requirements of the inkjet process, it also increases the probability of color mixing and reduces the manufacturing yield.

The present invention provides a pixel structure that can meet high-resolution requirements, provide good display quality, and improve manufacturing yield.

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70%。 The pixel structure of the present invention includes a first electrode and a pixel definition layer disposed on the first electrode. The pixel definition layer has pixel openings, including an intermediate portion and first and second portions. The first part, the middle part, and the second part are sequentially arranged in the first direction. The first part has a first width W1 in the second direction, the second part has a second width W2 in the second direction, and the middle part has a fixed third width W3 in the second direction, W3<W1 and W3<W2 . The first part has a first length L1 in the first direction, the second part has a second length L2 in the first direction, and the middle part has a third length L3 in the first direction, 20%

×100%

70%.

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70%。這些畫素開口包括第一畫素開口與第二畫素開口在第一方向上依序排列。 The pixel structure of the present invention includes a first electrode and a pixel definition layer disposed on the first electrode. The pixel definition layer has a plurality of pixel openings, and each pixel opening includes an intermediate portion and first and second portions. The first part, the middle part, and the second part are sequentially arranged in the first direction. The first part has a first width W1 in the second direction, the second part has a second width W2 in the second direction, and the middle part has a fixed third width W3 in the second direction, W3<W1 and W3<W2 . The first part has a first length L1 in the first direction, the second part has a second length L2 in the first direction, and the middle part has a third length L3 in the first direction, 20%

×100%

70%. The pixel openings include first pixel openings and second pixel openings arranged in sequence in the first direction.

Based on the above, the pixel structure of an embodiment of the present invention is viewed from above in a plan view. Since both ends of the pixel opening of the pixel structure have a first portion and a second portion with a larger width, and a smaller portion in the middle The middle part of the fixed width, and the length of the middle part is between 20% and 70% of the total length of the pixel opening. In this way, when the droplets of the light emitting pattern are sprayed on the middle portion by inkjet coating, a part of the droplets of the light emitting pattern The part can flow into the first part and the second part from the middle part having a fixed width. The other part of the droplet of the luminescent pattern is sprayed on the second retaining wall and flows to the pixel corresponding to the center of the droplet, without flowing into the middle of the opening of the adjacent pixel. In this way, the pixel structure can reduce the probability of color mixing and improve the manufacturing yield without increasing the accuracy requirements of the inkjet process. In addition, in a plan view, since the first and second portions of the pixel opening at both ends of the pixel structure have a large orthographic projection area, the pixel structure can increase the aperture ratio and enable the pixel structure to achieve high resolution Demand to provide good display quality.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

10, 10A, 10B, 10C, 10D, 10E, 10F, 10G ‧‧‧ pixel structure

100‧‧‧ substrate

120‧‧‧First electrode

140‧‧‧ pixel definition layer

142‧‧‧Second retaining wall

150‧‧‧ pixel opening

1501‧‧‧The first pixel opening

1502‧‧‧Second pixel opening

152, 152A, 152B

1521‧‧‧First outer side

1522, 1522A

154, 154A, 154B

1541‧‧‧Second outer side

1542、1542B‧‧‧Second inner side

156‧‧‧Middle

160‧‧‧Glow pattern

160G‧‧‧First light pattern

160R‧‧‧Second light pattern

160B‧‧‧The third light pattern

180‧‧‧Second electrode

242‧‧‧The first retaining wall

A-A’, B-B’, C-C’, D-D’, E-E’, F-F’

D1‧‧‧First direction

D2‧‧‧Second direction

H1, H2‧‧‧thickness

L1‧‧‧ First length

L2‧‧‧Second length

L3‧‧‧third length

PX‧‧‧ pixels

PX1, PXA‧‧‧The first sub-pixel

PX2, PXB‧‧‧Second sub-pixel

PX3‧‧‧third pixel

PX4‧‧‧The fourth pixel

W1‧‧‧First width

W2‧‧‧second width

W3‧‧‧third width

W4‧‧‧ Fourth width

FIG. 1 is a schematic partial top view of a pixel structure according to an embodiment of the invention.

FIG. 2A is a schematic cross-sectional view of the pixel structure of FIG. 1 along section line A-A'.

FIG. 2B is a schematic cross-sectional view of the pixel structure of FIG. 1 along section line A-A'.

FIG. 3 is a schematic cross-sectional view of the pixel structure of FIG. 1 along section line B-B'.

4 is a schematic cross-sectional view of the pixel structure of FIG. 1 along the cross-sectional line C-C'.

5A is a schematic partial top view of a pixel structure according to another embodiment of the invention.

5B is a schematic cross-sectional view of the pixel structure of FIG. 5A along the cross-sectional line D-D'.

6 is a schematic cross-sectional view of a pixel structure according to another embodiment of the invention.

7A is a schematic partial top view of a pixel structure according to another embodiment of the invention.

7B is a schematic cross-sectional view of the pixel structure of FIG. 7A along the cross-sectional line E-E'.

8A is a schematic partial top view of a pixel structure according to another embodiment of the invention.

8B is a schematic cross-sectional view of the pixel structure of FIG. 8A along the section line F-F'.

9 is a schematic cross-sectional view of a pixel structure according to another embodiment of the invention.

FIG. 10A is a schematic partial top view of a pixel structure according to another embodiment of the invention.

10B is a schematic partial top view of a pixel structure according to still another embodiment of the invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “connected to” another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, "electrical connection" or "coupling" may be that there are other elements between the two elements.

It should be understood that although the terms "first", "second", "third", etc. are used herein It can be used to describe various elements, components, regions, layers, and/or parts, but these elements, components, regions, and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Accordingly, "first element", "component", "region", "layer" or "portion" discussed below may be referred to as a second element, component, region, layer or section without departing from the teachings herein.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and the present invention, and will not be interpreted as idealized or excessive Formal meaning unless explicitly defined as such in this article.

FIG. 1 is a schematic partial top view of a pixel structure according to an embodiment of the invention. FIG. 2A is a schematic cross-sectional view of the pixel structure of FIG. 1 along section line A-A'. FIG. 2B is a schematic cross-sectional view of the pixel structure of FIG. 1 along section line A-A'. FIG. 3 is a schematic cross-sectional view of the pixel structure of FIG. 1 along section line B-B'. 4 is a schematic cross-sectional view of the pixel structure of FIG. 1 along the cross-sectional line C-C'. Fig. 1, Fig. 2A, Fig. 2B, Fig. 3 and Fig. 4 only show some components schematically for the convenience of explanation and observation. Please refer to FIGS. 1, 2A, 2B, 3 and 4. In this embodiment, the pixel structure 10 includes a first electrode 120 and a pixel definition layer 140 disposed on the first electrode 120. The pixel structure 10 further includes a light emitting pattern 160 and a second electrode 180.

For example, the pixel structure 10 is disposed on the substrate 100. In this embodiment The material of the substrate 100 may be glass, quartz, organic polymer, opaque/reflective material (for example: conductive material, metal, wafer, ceramic, or other applicable materials) or other applicable materials. If conductive materials or metals are used, a layer of insulating material (not shown) is covered on the substrate 100 to avoid short circuit problems.

In some embodiments, an active device layer (not shown) may be provided on the substrate 100. The active device layer is, for example, an active device array, including a dielectric layer, a plurality of active devices, and a plurality of signal lines connecting the active devices. The active device includes thin film transistor (TFT). The thin film transistor is, for example, low temperature poly-Si (LTPS) or amorphous silicon thin-film transistor (a-Si), but the invention is not limited thereto.

In this embodiment, the first electrode 120 of the pixel structure 10 is disposed on the substrate 100. For example, the first electrode 120 may be disposed on the active device layer, and the first electrode 120 is electrically connected to the active device layer, but the invention is not limited thereto. The material of the first electrode 120 is a conductor material, such as aluminum (Al), silver (Ag), chromium (Cr), copper (Cu), nickel (Ni), titanium (Ti), molybdenum (Mo), magnesium (Mg) , Platinum (Pt), gold (Au) or a combination thereof. The first electrode 120 may have a single-layer, double-layer or multi-layer structure. For example, the first electrode 120 may be a three-layer structure composed of ITO/Ag/ITO, but the invention is not limited thereto. In other embodiments, the first electrode 120 may also be Ti/Al/Ti or a three-layer structure composed of Mo/Al/Mo. In some embodiments, the first electrode 120 further includes a reflective electrode, the material of which may be a metal that has good reflectivity to visible light, such as aluminum, molybdenum, gold, or a combination thereof. In some embodiments, the forming method of the first electrode 120 may be chemical vapor deposition (CVD), physical vapor deposition (PVD), or Sub-layer deposition (ALD), evaporation (VTE), sputtering (SPT) or a combination thereof. In some embodiments, the first electrode 120 may serve as an anode of the light emitting pattern 160, but the invention is not limited thereto.

The pixel definition layer 140 is disposed and covers the substrate 100 and the first electrode 120. For example, the pixel definition layer 140 may be disposed on the first electrode 120 entirely or partially, but the invention is not limited thereto. The pixel definition layer 140 has a pixel opening 150. For example, the orthographic projection of the pixel opening 150 on the substrate 100 overlaps the portion of the first electrode 120. From another perspective, the pixel opening 150 exposes a portion of the first electrode 120 located in the pixel opening 150. The material of the pixel definition layer 140 includes an inorganic material. Inorganic materials include silicon nitride (SiN _x ) or other suitable materials, and the invention is not limited thereto. In some embodiments, the material of the pixel definition layer 140 also includes a photoresist material. The method of forming the pixel opening 150 is, for example, etching the pixel definition layer 140 through the yellow light lithography etching method. In other words, the area of the pixel opening 150 formed by the patterned pixel definition layer 140 can be used to define the pixel PX.

In this embodiment, the pixel opening 150 includes an intermediate portion 156 and a first portion 152 and a second portion 154. The first portion 152, the intermediate portion 156, and the second portion 154 are sequentially arranged in the first direction D1. For example, as shown in FIG. 1, the first portion 152 and the second portion 154 may be located at opposite ends of the pixel opening 150, and the middle portion 156 is located between the first portion 152 and the second portion 154.

2A and 2B, the light emitting pattern 160 is disposed in the pixel opening 150 to contact the first electrode 120. The light emitting pattern 160 is, for example, an electroluminescent organic light emitting structure, but the invention is not limited thereto. In this embodiment, in order to improve the utilization rate of materials In order to reduce the manufacturing cost, the light emitting pattern 160 can be formed by an ink jet printing (IJP) process. For example, a liquid organic light-emitting material (not shown) can be disposed on the first electrode 120 and located in the pixel opening 150 through an inkjet coating process, and then a thin-film light-emitting pattern 160 is formed by a drying process. In some embodiments, the light emitting pattern 160 may be a multi-layer structure including a hole injection layer (HIL), a hole transfer layer (HTL), an emission layer (EL), and electron transport Layer (electron transfer layer, ETL). 2A and 2B are shown in a one-layer structure for convenience of description and clear display. In this embodiment, the inkjet coating process and the curing process can be repeated to form the light-emitting pattern 160 with a desired thickness, but the invention is not limited thereto.

In some embodiments, the material of the hole injection layer is, for example, xylylene copper, star arylamines, polyaniline, polyethylene dioxythiophene, or other suitable materials. The material of the hole transport layer is, for example, triaromatic amines, cross-structured diamine biphenyl, diamine biphenyl derivatives or other suitable materials. The light-emitting layer may be a red organic light-emitting layer, a green organic light-emitting layer, a blue organic light-emitting layer, or a light-emitting layer of different colors (for example, white, orange, yellow, etc.) produced by mixing light of various spectra. The material of the electron transport layer may be an oxazole derivative and its dendrimer, a metal chelate compound (such as Alq3), an azole compound, a diazoanthracene derivative, a silicon-containing heterocyclic compound, or other suitable materials.

The difference between the liquid-based surface tension and the adsorption force of the pixel-defining layer 140 (as a retaining wall structure defining the pixel PX) results in the thickness of the light emitting pattern 160 gradually approaching the pixel-defining layer 140 during the drying of the droplet increase. In other words, the thickness H1 of the light emitting pattern 160 at the junction of the pixel definition layer 140 and the first electrode 120 is large The thickness H2 of the light emitting pattern 160 on the first electrode 120.

In this embodiment, in the direction perpendicular to the substrate 100, the heights (for example, the thickness H2) of the light emitting patterns 160 in the adjacent different pixel openings 150 may be the same as or different from each other. The following uses an example in which the heights of different light emitting patterns 160 are different. Since the areas of different pixel openings 150 can define different pixel PX (marked in FIG. 1), the light emitting patterns 160 in the different pixel openings 150 can include a first light emitting pattern 160G, a second light emitting pattern 160R, and a third light emitting Pattern 160B. The first light-emitting pattern 160G, the second light-emitting pattern 160R, and the third light-emitting pattern 160B can respectively emit first color light, second color light, and third color light of different wavelengths (not shown). For example, the first color light is green light, the second color light is red light, and the third color light is blue light, but the invention is not limited thereto. The user can selectively adjust the heights of the first light-emitting pattern 160G, the second light-emitting pattern 160R, and the third light-emitting pattern 160B according to the needs of the colored light. For example, as shown in FIG. 2A, the height of the second light emitting pattern 160R is greater than the height of the first light emitting pattern 160G than the height of the third light emitting pattern 160B, but the invention is not limited thereto. In some embodiments, the heights of the first light emitting pattern 160G, the second light emitting pattern 160R, and the third light emitting pattern 160B may also be the same or all the same for at least any two of them.

2B, the pixel structure 10 further includes a second electrode 180 disposed on the pixel definition layer 140. For example, the second electrode 180 may be disposed on the pixel definition layer 140 and the light emitting pattern 160 over the entire surface and overlap the first electrode 120 and the pixel opening 150, but the invention is not limited thereto. The material of the second electrode 180 may be a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc Oxides or metal oxides such as indium germanium zinc oxide. In some embodiments, the forming method of the second electrode 180 may be chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), vapor deposition (VTE), sputtering (SPT), or Its combination. In some embodiments, the second electrode 180 may serve as a cathode of the light emitting pattern 160.

In some embodiments, a protective layer, a flat layer, a water-blocking oxygen layer (not shown), or other suitable film layers may be selectively disposed on the second electrode 180. The present invention is not limited thereto.

It is worth noting that, referring to FIGS. 1, 2A, 3 and 4, the extending direction of the first direction D1 is perpendicular to the extending direction of the second direction D2. The first portion 152 of the pixel opening 150 has a first width W1 in the second direction D2, the second portion 154 has a second width W2 in the second direction D2, and the middle portion 156 has a fixed first width in the second direction D2 Three widths W3, where W3<W1 and W3<W2. In some embodiments, the first width W1 and the second width W2 may be the same or different. In other words, the first width W1 may be equal to, greater than or less than the second width W2, and the invention is not limited thereto. Under the above arrangement, in the second direction D2, the distance between the middle portions 156 of two adjacent pixel openings 150 may be fixed and greater than the distance between the adjacent first portions 152 (or second portions 154) distance. In detail, the pixel definition layer 140 further includes a plurality of second retaining walls 142. The second blocking wall 142 is, for example, a pixel definition layer 140 disposed on both sides of the middle portion 156. Specifically, the second retaining walls 142 are respectively disposed on the two sides of the middle portion 156 to define the area of the middle portion 156. Each second retaining wall 142 (for example, the second retaining wall 142 between two adjacent middle portions 156) has a fourth width W4 in the second direction D2. In this embodiment, W3=2W1-X, and W4= X-W1, and X is the droplet diameter of the light emitting pattern 160 and the width of the mechanical precision. In this way, when the droplets of the light emitting pattern 160 are sprayed on the middle portion 156 by inkjet coating, the fixed third width W3 can ensure that part of the droplets of the light emitting pattern 160 can flow into the first from the middle portion 156部152 and second part 154. In addition, since the second retaining walls 142 on both sides of the intermediate portion 156 have a sufficient fourth width W4 (eg, the distance between adjacent intermediate portions 156), another portion of the light emitting pattern 160 sprayed on the second retaining wall 142 The droplets (including droplets that do not overlap the middle portion 156 due to part of the droplet diameter and mechanical accuracy) are sprayed on the second retaining wall 142 and flow to the pixel PX corresponding to the droplet center (for example: 1 the middle portion 156 of the left pixel opening 150) without flowing into the middle portion 156 of the pixel opening 150 of the adjacent pixel (for example: the middle portion 156 of the middle pixel of FIG. 1). In this way, the pixel structure 10 can reduce the probability of color mixing and improve the manufacturing yield without increasing the accuracy requirements of the inkjet process.

In addition, since the first width W1 of the adjacent first portion 152 (or the second width W2 of the second portion 154) may be greater than the third width W3 of the middle portion 156, the area of the pixel opening 150 may be increased. Thereby, the light-emitting area of the light-emitting pattern 160 can be increased, the aperture ratio can be improved, the pixel structure 10 can meet the high-resolution requirement, and good display quality can be provided.

×100%

70%。換句話說，中間部156的第三長度L3為畫素開口150的總長 (L1+L2+L3)的20%至70%之間。在上述的設置下，使用者可依需求，調整第三長度L3與第一長度L1及第二長度L2的關係。如此，可以同時增加第一部152及第二部154的面積並減少混色的機率。因此，發光圖案160的發光面積可以增加，提升開口率，使畫素結構10達成高解析度的需求，提供良好的顯示品質，還可以提升製造良率。 In addition, the first portion 152 has a first length L1 in the first direction D1, the second portion 154 has a second length L2 in the first direction D1, and the middle portion 156 has a third length L3 in the first direction D1, of which 20 %

×100%

70%. In other words, the third length L3 of the middle portion 156 is between 20% and 70% of the total length (L1+L2+L3) of the pixel opening 150. Under the above configuration, the user can adjust the relationship between the third length L3 and the first length L1 and the second length L2 according to requirements. In this way, the area of the first portion 152 and the second portion 154 can be increased at the same time and the probability of color mixing can be reduced. Therefore, the light-emitting area of the light-emitting pattern 160 can be increased, the aperture ratio can be increased, the pixel structure 10 can achieve high-resolution requirements, provide good display quality, and can also improve the manufacturing yield.

Please refer to FIGS. 1 and 4. In this embodiment, the first part 152 has a first inner side 1522 and a first outer side 1521, and the second part 154 has a second inner side 1542 and a second outer side 1541. From another perspective, the first inner side 1522 and the first outer side 1521 can be used to define the side wall of the pixel defining layer 140 on the first portion 152 in the first direction D1 and the first length of the first portion 152 L1. The second inner side 1542 and the second outer side 1541 can be used to define the side wall of the pixel defining layer 140 on the second portion 154 in the first direction D1 and the second length L2 of the second portion 154. The light emitting pattern 160 may extend from the first portion 152 to the second portion 154 through the middle portion 156, and the light emitting pattern 160 is located between the first outer side 1521 and the second outer side 1541. In this embodiment, the first inner side 1522 and the first outer side 1521 are parallel to the second direction D2, and the second inner side 1542 and the second outer side 1541 are parallel to the second direction D2, but the present invention does not use this Limited.

In short, the user looks at the pixel opening 150 in a top view. Since the pixel opening 150 of the pixel structure 10 of the present invention can be I-shaped with a larger width at both ends and a smaller fixed width in the middle Or I shape. In this way, the aperture ratio can be increased, so that the pixel structure 10 can meet the high-resolution requirements, providing good display quality can also reduce the chance of color mixing, and improve the manufacturing yield.

The following embodiments continue to use the element numbers and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar elements. For the description of the parts that omit the same technical content, please refer to the previous embodiments. Repeat the details.

5A is a schematic partial top view of a pixel structure according to another embodiment of the invention. 5B is a schematic cross-sectional view of the pixel structure of FIG. 5A along the cross-sectional line D-D'. FIGS. 5A and 5B only schematically show some components for convenience of explanation and observation. The pixel structure 10A shown in this embodiment is similar to the pixel structure 10 shown in FIGS. 1 and 4. The main difference is that the pixel structure 10A further includes a first retaining wall 242 disposed in the middle portion 156. For example, the first blocking wall 242 is disposed in the pixel opening 150 to define the area of the pixel opening 150 as the first sub-pixel PX1 and the second sub-pixel PX2. Specifically, in the first direction D1, the first electrode 120 and the light emitting pattern 160 are located in the area between the first blocking wall 242 and the pixel definition layer 140. In this way, compared to the pixel structure 10 of FIG. 1, the pixel structure 10A can pass through the first retaining wall 242 to define one pixel opening 150 to define two sub-pixels PX1 and PX2. In some embodiments, the first blocking wall 242 can also define the pixel opening 150 as three, four or more sub-pixels, but the invention is not limited thereto. Therefore, the pixel structure 10A can further improve the resolution and provide good display quality. In addition, the pixel structure 10A can also obtain technical effects similar to those of the foregoing embodiments.

In this embodiment, the material of the first retaining wall 242 may include inorganic materials, such as silicon oxide (SiO ₂ ) or other suitable materials, and the invention is not limited thereto.

6 is a schematic cross-sectional view of a pixel structure according to another embodiment of the invention, For convenience of description and observation, FIG. 6 only schematically shows some components. The pixel structure 10B shown in this embodiment is similar to the pixel structure 10 shown in FIG. 4, the main difference is that the pixel structure 10B further includes a plurality of first retaining walls 242. One of the first retaining walls 242 is disposed corresponding to the first outer side 1521 of the first portion 152, and one of the first retaining walls 242 is disposed corresponding to the second outer side 1541 of the second portion 154. In other words, compared to the pixel structure 10 shown in FIG. 4, the pixel structure 10B of this embodiment replaces a portion of the pixels defining the first outer side 1521 of the first portion 152 with the first retaining wall 242 The layer 140 is defined, and a part of the pixel definition layer 140 defining the second outer side 1541 of the second portion 154 is replaced by another first retaining wall 242. In short, the first blocking wall 242 may be disposed at an end adjacent to the first portion 152 and an end adjacent to the second portion 154 to define the pixel opening 150 (marked in FIG. 1) together with the pixel definition layer 140. In this way, in the second direction D2, the pixel structure 10B can further reduce the distance between adjacent pixel openings 150, improve resolution, and provide good display quality. In addition, the pixel structure 10B can also obtain technical effects similar to those of the foregoing embodiments.

FIG. 7A is a partial schematic top view of a pixel structure according to another embodiment of the present invention. For convenience of description and observation, FIG. 7A only schematically shows some components. 7B is a schematic cross-sectional view of the pixel structure of FIG. 7A along the cross-sectional line E-E'. The pixel structure 10C shown in this embodiment is similar to the pixel structure 10 shown in FIGS. 1 and 4. The main difference is that the pixel definition layer 140 includes a plurality of pixel openings 150. The pixel openings 150 include at least one first pixel opening 1501 and at least one second pixel opening 1502 arranged in sequence in the first direction D1. For example, the pixel structure 10C further includes a first blocking wall 242 disposed in the first pixel opening 1501 and the second pixel opening Between 1502, the area of the first pixel opening 1501 is defined as the first sub-pixel PXA, and the area of the second pixel opening 1502 is defined as the second sub-pixel PXB. Specifically, in the first direction D1, the first electrode 120 and the light emitting pattern 160 are located in the area between the first blocking wall 242 and the pixel definition layer 140. In this way, compared to the pixel structure 10 of FIG. 1, the first pixel opening 1501 and the second pixel opening 1502 of the pixel structure 10C can penetrate the first blocking wall 242 and separate in the second direction D2. Under the above arrangement, the pixel structure 10C can define the second portion 154 of the first pixel opening 1501 and the first portion 152 of the second pixel opening 1502 through the first blocking wall 242 instead of using the pixel definition layer 140 to define the second portion 154 of the first pixel opening 1501. In this way, in the second direction D2, the distance between the first sub-pixel PXA and the second sub-pixel PXB can be further reduced, thereby improving the resolution and providing good display quality. In addition, the pixel structure 10C can also obtain technical effects similar to those of the foregoing embodiments.

Referring to FIG. 7B, the pixel structure 10C further includes a second electrode 180 disposed on the pixel definition layer 140 and overlapping the first pixel opening 1501 and the second pixel opening 1502, but the invention is not limited thereto. In addition, due to the difference between the surface tension of the liquid and the adsorption force of the pixel definition layer 140 (as a barrier structure defining the first sub-pixel PXA and the second sub-pixel PXB), the light emitting pattern 160 is on the pixel definition layer 140 The thickness H1 at the junction with the first electrode 120 is greater than the thickness H2 of the light emitting pattern 160 on the first electrode 120.

8A is a schematic partial top view of a pixel structure according to another embodiment of the invention. 8B is a schematic cross-sectional view of the pixel structure of FIG. 8A along the section line F-F'. 8A and 8B for convenience of explanation and observation, only a part of the structure is schematically shown Pieces. The pixel structure 10D shown in this embodiment is similar to the pixel structure 10C shown in FIGS. 7A and 7B. The main difference is that the pixel structure 10D further includes a plurality of first retaining walls 242 disposed in the first pixel opening The middle portion 156 of 1501, the middle portion 156 of the second pixel opening 1502, and between the first pixel opening 1501 and the second pixel opening 1502. In this embodiment, the first blocking walls 242 define the area of the first pixel opening 1501 as the first sub-pixel PX1 and the second sub-pixel PX2, and define the area of the second pixel opening 1502 as the first Three sub-pixels PX3 and fourth sub-pixel PX4. In this way, compared to the pixel structure 10C of FIGS. 7A and 7B, the pixel structure 10D can define a plurality of pixel openings 1501 and 1502 and a plurality of sub-pixels PX1 and PX2 through a plurality of first retaining walls 242. PX3, PX4. Therefore, in addition to the distance between the first pixel opening 1501 and the second pixel opening 1502 can be further reduced, the number of sub-pixels (eg, two, three, four or more) can also be increased, To further improve the resolution and provide good display quality. In addition, the pixel structure 10D can also obtain technical effects similar to those of the foregoing embodiments.

FIG. 9 is a schematic cross-sectional view of a pixel structure according to another embodiment of the present invention. For convenience of description and observation, FIG. 9 only schematically shows some components. The pixel structure 10E shown in this embodiment is similar to the pixel structure 10D shown in FIG. 8B. The main difference is that one of the plurality of first retaining walls 242 of the pixel structure 10E corresponds to the first portion 152 (labeled The first outer side 1521 of FIG. 8A) is provided, and one of the first retaining walls 242 corresponds to the second outer side 1541 of the second portion 154 (labeled in FIG. 8A). In other words, compared to the pixel structure 10D shown in FIG. 8B, the pixel structure 10E of the present embodiment replaces the first outer wall defining the first portion 152 with the first retaining wall 242. The partial pixel definition layer 140 of the side 1521 is replaced by another first retaining wall 242 that defines the partial pixel definition layer 140 of the second outer side 1541 of the second portion 154. In this way, the pixel structure 10E can obtain similar technical effects as the above-mentioned embodiment.

FIG. 10A is a schematic partial top view of a pixel structure according to another embodiment of the present invention. For convenience of description and observation, FIG. 10A only schematically shows some components. The pixel structure 10F shown in this embodiment is similar to the pixel structure 10 shown in FIG. 1, the main difference is that the first inner side 1522A of the first portion 152A is opposite to the second inner side 1542A of the second portion 154A Settings. The extending direction of the first inner side 1522A crosses the extending direction of the second inner side 1542A. For example, in the first direction D1, the distance from the junction of the first inner side 1522A and the middle portion 156 to the first outer side 1521 may be away from the middle portion 156 along the second direction D2 Gradually increase. The distance from the junction of the second inner side 1542A and the middle portion 156 to the second outer side 1541 may gradually increase in a direction away from the middle portion 156 along the second direction D2. That is, the first inner side 1522A and the second inner side 1542A extend along the oblique angle and are not parallel to the second direction D2, and the first inner side 1522A and the second inner side 1542A are not parallel to each other. Under the above arrangement, compared to the pixel structure 10 shown in FIG. 1, the orthographic projection areas of the first portion 152A and the second portion 154A of the pixel structure 10F can be increased in a plan view. In this way, the light emitting area of the light emitting patterns (not shown) in the first portion 152A and the second portion 154A can be increased, increasing the aperture ratio, enabling the pixel structure 10F to meet the high-resolution requirements, and providing good display quality. In addition, the pixel structure 10F can also obtain technical effects similar to those of the foregoing embodiments.

10B is a partial top view of a pixel structure according to another embodiment of the invention Schematic diagram, FIG. 10B only schematically illustrates some components for convenience of explanation and observation. The pixel structure 10G shown in this embodiment is similar to the pixel structure 10 shown in FIG. 1, the main difference is that the four corners of the first portion 152B and the second portion 154B are curved. In this way, the pixel structure 10G can obtain technical effects similar to those of the foregoing embodiments.

In summary, the pixel structure of an embodiment of the present invention is viewed in a plan view. Since the pixel opening of the pixel structure has a first portion and a second portion with a larger width at both ends, the middle portion has a larger width. The middle part of the small fixed width, and the length of the middle part is between 20% and 70% of the total length of the pixel opening. In this way, when the droplets of the light-emitting pattern are sprayed on the middle portion by inkjet coating, a part of the droplets of the light-emitting pattern may flow into the first portion and the second portion from the middle portion having a fixed width. The other part of the droplet of the light-emitting pattern is sprayed on the second retaining wall and flows to the middle of the pixel opening of the pixel corresponding to the center of the droplet due to the diameter and mechanical accuracy of the droplet. It will flow into the middle of the pixel opening of adjacent pixels. In this way, the pixel structure can reduce the probability of color mixing and improve the manufacturing yield without increasing the accuracy requirements of the inkjet process. In addition, in a plan view, since the first and second portions of the pixel opening at both ends of the pixel structure have a large orthographic projection area, the pixel structure can increase the aperture ratio and enable the pixel structure to achieve high resolution Demand to provide good display quality.

In addition, the pixel structure may also include a first retaining wall disposed in the middle to define more sub-pixels, further improve resolution, and provide good display quality. In addition, the first retaining wall may also be provided corresponding to the first outer side and the second outer side, so as to define a pixel opening together with the pixel definition layer. In this way, the pixel structure can further reduce the distance between adjacent pixel openings, improve resolution, and provide good display quality. Go further In other words, the extending direction of the first inner side may also intersect the extending direction of the second inner side. In this way, the orthographic projection areas of the first part and the second part can be increased to further increase the light-emitting area, improve the aperture ratio, enable the pixel structure to meet the requirements of high resolution, and provide good display quality.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10‧‧‧ pixel structure

140‧‧‧ pixel definition layer

142‧‧‧Second retaining wall

150‧‧‧ pixel opening

152‧‧‧Part 1

1521‧‧‧First outer side

1522‧‧‧Inner side

154‧‧‧Part 2

1541‧‧‧Second outer side

1542‧‧‧Second inner side

156‧‧‧Middle

A-A’, B-B’, C-C’ ‧‧‧ hatch

D1‧‧‧First direction

D2‧‧‧Second direction

L1‧‧‧ First length

L2‧‧‧Second length

L3‧‧‧third length

PX‧‧‧ pixels

W1‧‧‧First width

W2‧‧‧second width

W3‧‧‧third width

W4‧‧‧ Fourth width

Claims (17)

A pixel structure, including: a first electrode; and a pixel definition layer disposed on the first electrode, having a pixel opening, the pixel opening includes: a middle portion; and a first portion and a first Two parts, the first part, the middle part and the second part are sequentially arranged in a first direction, wherein the first part has a first width W1 in a second direction, and the second part is in the The second direction has a second width W2, the middle portion has a fixed third width W3 in the second direction, W3<W1 and W3<W2, wherein the first portion has a first width in the first direction A length L1, the second portion has a second length L2 in the first direction, and the middle portion has a third length L3 in the first direction, 20%

×100%

70%. The pixel structure as described in item 1 of the patent application scope further includes a light emitting pattern disposed in the pixel opening, wherein the light emitting pattern is located at the junction of the pixel defining layer and the first electrode The thickness H1 is greater than the thickness H2 of the light emitting pattern on the first electrode. The pixel structure as described in item 1 of the patent application scope further includes a first retaining wall disposed in the middle portion to define the area of the pixel opening as a first sub-pixel and a second sub-pixel . The pixel structure as described in item 1 of the patent application scope, wherein the pixel definition layer further includes a plurality of second retaining walls, which are respectively disposed on two sides of the middle portion, each of which The second retaining wall has a fourth width W4 in the second direction. The pixel structure as described in item 1 of the patent application, wherein the first part has a first inner side and a first outer side, the first inner side and the first outer side are parallel to the first In two directions, the second portion has a second inner side and a second outer side, and the second inner side and the second outer side are parallel to the second direction. The pixel structure as described in item 5 of the patent application scope further includes a plurality of first retaining walls, one of the first retaining walls is disposed corresponding to the first outer side of the first part, and the The other one of the retaining walls corresponds to the second outer side of the second part. The pixel structure as described in item 1 of the patent application scope, wherein a first inner side of the first part is opposite to a second inner side of the second part, and the extending direction of the first inner side is staggered by the The extending direction of the second inner side. The pixel structure as described in item 1 of the patent application further includes a second electrode, which is disposed on the pixel definition layer. A pixel structure includes: a first electrode; and a pixel definition layer disposed on the first electrode and having a plurality of pixel openings, each of the pixel openings includes: a middle portion; and a first portion and A second part, the first part, the middle part and the second part are sequentially arranged in a first direction, wherein the first part has a first width W1 in a second direction, the second part Has a second width W2 in the second direction, the middle portion has a fixed third width W3 in the second direction, W3<W1 and W3<W2, wherein the first portion has in the first direction A first length L1, the second portion has a second length L2 in the first direction, and the middle portion has a third length L3 in the first direction, 20%

×100%

70%, wherein the pixel openings include a first pixel opening and a second pixel opening sequentially arranged in the first direction. The pixel structure described in item 9 of the patent application scope further includes a first retaining wall disposed between the first pixel opening and the second pixel opening to define the area of the first pixel opening It is a first sub-pixel, and the area where the second pixel is opened is defined as a second sub-pixel. The pixel structure described in item 9 of the patent application scope further includes a plurality of first retaining walls disposed at the middle portion of the first pixel opening, the middle portion of the second pixel opening, and the first picture Between the pixel opening and the second pixel opening, the area of the first pixel opening is defined as a first sub-pixel and a second sub-pixel, and the area of the second pixel opening is defined as a first Three sub-pixels and a fourth sub-pixel. The pixel structure as described in item 9 of the patent application scope further includes a plurality of light emitting patterns, each of the light emitting patterns is disposed in each of the pixel openings, wherein each of the light emitting patterns is in the pixel definition layer and the The thickness H1 of the junction of the first electrodes is greater than the thickness H2 of each light-emitting pattern on the first electrode. The pixel structure as described in item 9 of the patent application scope, wherein the first part has a first inner side and a first outer side, the first inner side and the first outer side are parallel to the first In two directions, the second portion has a second inner side and a second outer side, and the second inner side and the second outer side are parallel to the second direction. The pixel structure as described in item 13 of the patent application scope further includes a plurality of first retaining walls, one of the first retaining walls is disposed corresponding to the first outer side of the first part, and the The other one of the retaining walls corresponds to the second outer side of the second part. The pixel structure as described in item 9 of the patent application scope, wherein a first inner side of the first part is opposite to a second inner side of the second part, and the extending direction of the first inner side staggers the The extending direction of the second inner side. The pixel structure described in item 9 of the patent application scope further includes a second electrode disposed on the pixel definition layer. A method for manufacturing a pixel structure includes: forming a first electrode on a substrate; disposing a pixel definition layer on the first electrode, having a pixel opening, the pixel opening including: a middle portion; and A first part and a second part, the first part, the middle part and the second part are sequentially arranged in a first direction; and a light emitting pattern is provided in the pixel opening, wherein the first part It has a first width W1 in a second direction, the second portion has a second width W2 in the second direction, and the middle portion has a fixed third width W3 in the second direction, W3<W1 And W3<W2, wherein the pixel definition layer further includes a plurality of second retaining walls, the second retaining walls are respectively disposed on two sides of the middle portion, and each of the second retaining walls is located in the second The direction has a fourth width W4, and W4=X-W1, where X is the width of the droplet diameter and mechanical precision of the light emitting pattern, wherein the first portion has a first length L1 in the first direction , The second part has a second length L2 in the first direction, and the middle part has a third length L3 in the first direction, 20%

×100%

70%.

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