TWI623098B - Pixel structure - Google Patents

Abstract

A pixel structure includes a substrate, a first sub-pixel structure, a second sub-pixel structure, and a third sub-pixel structure. The first sub-pixel structure, the second sub-pixel structure, and the third sub-pixel structure are arranged on the substrate, wherein the first sub-pixel structure and the second sub-pixel structure are arranged in a first direction, and the third sub-pixel structure The pixel structure surrounds the first sub-pixel structure and the second sub-pixel structure.

Description

Pixel structure

The invention relates to a pixel structure, and in particular to a pixel structure for an organic light emitting diode display panel.

In recent years, organic light-emitting diode displays have great potential because they have the advantages of self-emission, wide viewing angle, power saving, simple procedures, low cost, wide operating temperature, high response speed, and full color. The mainstream of flat-panel displays. With the continuous progress of display technology, the requirements for the display quality of the display are also increasing. Therefore, how to improve the display quality of the organic light emitting diode display is still a very desirable goal in this field.

The invention provides a pixel structure, which can improve the display quality of a display panel.

The pixel structure of the present invention includes a substrate, a first sub-pixel structure, a second sub-pixel structure, and a third sub-pixel structure. The first sub-pixel structure, the second sub-pixel structure, and the third sub-pixel structure are arranged on the substrate, wherein the first sub-pixel structure and the second sub-pixel structure are arranged in a first direction, and the third sub-pixel structure The pixel structure surrounds the first sub-pixel structure and the second sub-pixel structure.

Based on the above, in the pixel structure of the present invention, the first sub-pixel structure and the second sub-pixel structure are arranged in one direction, and the third sub-pixel structure surrounds the first sub-pixel structure and the second sub-pixel structure. With this structure, the display quality of the display panel including the pixel structure of the present invention can be improved.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

Multiple embodiments of the present invention will be disclosed in the following drawings. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, to simplify the drawings, some conventional structures and elements will be used in the drawings in a simple and schematic manner.

As used herein, "about" or "approximately" or "substantially" includes the stated value and an average value within an acceptable deviation range of a particular value determined by one of ordinary skill in the art, taking into account the measurements in question and the measurements A specific number of related errors (ie, limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or for example within ± 20%, ± 15%, ± 10%, ± 5%.

In the drawings, the thicknesses of layers, films, panels, regions, etc. are exaggerated for clarity. Throughout the description, the same drawing element symbols indicate the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and / or electrical connection.

The pixel structure of the present invention can be applied to, for example, an organic light emitting diode display panel. Based on this, although in order to explain the design of the pixel structure of the present invention in detail, a single pixel structure is taken as an example below, but anyone with ordinary knowledge in the technical field should understand that organic light emitting diode display The panel generally includes a pixel array arranged by a plurality of identical or similar pixel structure arrays. Therefore, anyone with ordinary knowledge in the technical field can understand the structure or layout of the pixel array in the organic light emitting diode display panel according to the following description of the single pixel structure.

FIG. 1 is a schematic top view of a pixel structure according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of a pixel structure according to a first embodiment of the present invention, taken along a section line A-A 'in FIG. 1. FIG. Please refer to FIG. 1 and FIG. 2 at the same time. In this embodiment, the pixel structure 10 may include a substrate 100, an element layer 110, a first electrode layer 120, a first light emitting layer 130, a second light emitting layer 132, and a third light emitting layer. 134. The isolation layer 140 and the second electrode layer 150. For convenience of description, elements such as the third light emitting layer 134 and the second electrode layer 150 are omitted in FIG. 1. In addition, in this embodiment, the shape of the pixel structure 10 (for example, the shape of the vertical projection area) is a square or a square-like shape, but is not limited thereto. In other embodiments, the shape of the pixel structure 10 may also be a polygon, an arc, a shape having a curvature or a bend, or other suitable shapes.

The substrate 100 includes a first sub-pixel region 100A, a second sub-pixel region 100B, and a third sub-pixel region 100C. In this embodiment, the material of the substrate 100 is, for example, glass, quartz, organic polymer, or metal.

In this embodiment, the first sub-pixel area 100A and the second sub-pixel area 100B are arranged along the direction D1, and the third sub-pixel area 100C surrounds the first sub-pixel area 100A and the second sub-pixel area 100B. . In detail, in this embodiment, the first sub-pixel region 100A and the second sub-pixel region 100B are arranged side by side, and the third sub-pixel region 100C surrounds the first sub-pixel. Area 100A and the periphery of the second sub-pixel area 100B. In this article, the side-by-side arrangement does not mean that the two sub-pixel regions are close to each other without any space or interval, but that the two sub-pixel regions are adjacent and the two sub-pixel regions are adjacent. There is still space or space between them, which can accommodate other sub-pixel regions. On the other hand, the first sub-pixel area 100A and the second sub-pixel area 100B are located in the third sub-pixel area 100C, that is, the third sub-pixel area 100C forms two closed accommodation areas. The pixel area 100A is located in one of the two closed accommodation areas, and the second sub pixel area 100B is located in the other of the two closed accommodation areas.

The first electrode layer 120 is disposed on the substrate 100. In detail, in this embodiment, the first electrode layer 120 includes an electrode pattern 120A, an electrode pattern 120B, and an electrode pattern 120C separated from each other. The electrode pattern 120A is located in the first sub-pixel region 100A, and may be referred to as the first An electrode pattern 120A, an electrode pattern 120B located in the second sub-pixel region 100B, may be referred to as a second electrode pattern 120B, and an electrode pattern 120C located in a third sub-pixel region 100C, may be referred to as a third electrode pattern 120C . That is, in this embodiment, the first electrode layer 120 is a patterned electrode layer, and the first electrode layer 120 is located in the first sub-pixel area 100A, the second sub-pixel area 100B, and the third sub-picture. Prime region 100C.

In this embodiment, the first electrode layer 120 may be formed using any method for manufacturing an electrode layer known to those having ordinary knowledge in the art, such as a thin film deposition and exposure and etching method, a screen printing method, and a spraying method. Ink printing method, transfer method, exposure and etching method, or other suitable methods.

The element layer 110 is disposed on the substrate 100 and is located between the substrate 100 and the first electrode layer 120 to provide a driving voltage to the first electrode layer 120 so that the first light-emitting layer 130 and the second light-emitting layer 132 in subsequent processes are provided. And / or the third light emitting layer 134 emits light. In this embodiment, the element layer 110 may be any active element layer for an organic light-emitting diode display panel known to those having ordinary knowledge in the art. For example, the element layer 110 may include at least a plurality of scanning lines. , Multiple data lines, multiple thin film transistors (TFTs), multiple capacitors and at least one power line (VDD), or other suitable electrodes or lines, but the present invention is not limited thereto. For example, in this embodiment, the element layer 110 includes a plurality of thin film transistors. The first electrode pattern 120A in the first sub-pixel region 100A, the second sub-pixel region 100B, and the third sub-pixel region 100B. The second electrode pattern 120B and the third electrode pattern 120C are respectively connected to corresponding thin film transistors, so that each sub-pixel receives the required signal, respectively.

In this embodiment, the element layer 110 may have a 2T1C structure, a 3T1C structure, a 4T2C structure, a 6T1C structure, a 7T2C structure, or any other structure applicable to an organic light emitting diode display panel.

In addition, in this embodiment, the first electrode layer 120 may have a single-layer or multi-layer structure, and its material may include a reflective material, such as a conductive material such as a metal, an alloy, a metal oxide, or a metal and a transparent conductive material. For example, the transparent conductive material is indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, metal and / or alloy with a thickness of less than 60 angstroms (Å), Carbon nanotubes / rods, or other suitable transparent conductive materials. That is, in this embodiment, the first electrode layer 120 is preferably a reflective electrode layer, and the pixel structure 10 may belong to a top emission type, but is not limited thereto. In other embodiments, the first electrode layer 120 may be a transparent conductive layer, and the pixel structure 10 may belong to a bottom emission type or a dual emission type.

The first light emitting layer 130, the second light emitting layer 132, and the third light emitting layer 134 are disposed between the first electrode layer 120 and the second electrode layer 150. For example, the first light-emitting layer 130 may be located in the first sub-pixel region 100A, the second light-emitting layer 132 may be located in the second sub-pixel region 100B, and the third light-emitting layer 134 may be located in the first sub-pixel region 100A. , The second sub-pixel region 100B and the third sub-pixel region 100C. In other words, in the first sub-pixel region 100A, the third light-emitting layer 134 covers the first light-emitting layer 130, and in the second sub-pixel region 100B, the third light-emitting layer 134 covers the second light-emitting layer 132. In other embodiments, the first light-emitting layer 130 may be located only in the first sub-pixel region 100A, the second light-emitting layer 132 may be located only in the second sub-pixel region 100B, and the third light-emitting layer 134 may be a continuous The structure layer is continuously distributed in the first sub-pixel area 100A, the second sub-pixel area 100B, and the third sub-pixel area 100C. In this embodiment, the third light-emitting layer 134 is preferably made of a material having a fast electron mobility so that the third light-emitting layer 134 covers the first sub-pixel region of the first light-emitting layer 130. In 100A, electrons and holes are easier to combine to emit light in the first light-emitting layer 130; and in the second sub-pixel region 100B in which the third light-emitting layer 134 covers the second light-emitting layer 132, electrons and holes are easier to The second light emitting layer 132 is combined to emit light. On the other hand, in this embodiment, the micro-resonant cavity effect can be used to control the light emitted by the third light-emitting layer 134 located in the first sub-pixel region 100A and the second sub-pixel region 100B from the pixel structure 10. Launch to the outside.

In this embodiment, for example, the first light-emitting layer 130 and the second light-emitting layer 132 respectively use an evaporation process or an inkjet process, and can be optionally matched with corresponding masks, for example, fine (or precision) metal Form a fine metal mask (FMM). In addition, in this embodiment, the third light-emitting layer 134 may be a continuous structure layer. Therefore, the third light-emitting layer 134 does not need to use a mask, such as FMM. In detail, in this embodiment, the third light-emitting layer 134 is formed by using, for example, a vapor deposition process or an inkjet process, and may be selectively matched with a general metal mask. It is worth mentioning that in this embodiment, since the third light-emitting layer 134 does not need to use a mask, for example, FMM is formed, the number of times of using the FMM can be reduced during the manufacturing process of the pixel structure 10, which can reduce Production cost and process difficulty.

In addition, in this embodiment, the first light emitting layer 130, the second light emitting layer 132, and the third light emitting layer 134 may be light emitting layers of different colors, for example, the first light emitting layer 130 may be a red light emitting layer and a second light emitting layer. The layer 132 may be a green light emitting layer and the third light emitting layer 134 may be a blue light emitting layer, that is, the first light emitting layer 130 may include a red light emitting material, the second light emitting layer 132 may include a green light emitting material, and the third light emitting layer 134 may include Blue luminescent material.

The isolation layer 140 is disposed on the first electrode layer 120. For example, the isolation layer 140 has an opening V1 and an opening V2, wherein the opening V1 exposes the electrode pattern 120A of the first electrode layer 120, that is, the isolation layer 140 does not shield at least a part of the electrode pattern 120A of the first electrode layer 120, and The opening V2 exposes the electrode pattern 120B of the first electrode layer 120, that is, the isolation layer 140 does not cover at least a part of the electrode pattern 120B of the first electrode layer 120. In addition, in this embodiment, the first light-emitting layer 130 is located at least in the opening V1 and covers the exposed electrode pattern 120A, and the second light-emitting layer 132 is located at least in the opening V2 and covers the exposed electrode pattern 120B. In other embodiments, the isolation layer 140 can surround the first light emitting layer 130 and the second light emitting layer 132. In this embodiment, the material of the isolation layer 140 may be a single-layer or multi-layer structure. Preferably, the material may include organic materials, such as polyimide (PI), polyamide (PA), and polyimide. Polyester, Benzocyclobutene (BCB), Photoresist, Polyvinylpyrrolidone (PVP), Polyethylene terephthalate (PET), or other suitable materials, but not Limited to this. In other embodiments, the material of the isolation layer 140 may also include inorganic materials, combinations of inorganic materials and organic materials, or other suitable materials. The inorganic materials are, for example, silicon oxide, silicon nitride, silicon oxynitride, or other materials. The right material.

In this embodiment, for example, the isolation layer 140 can be used to define the first sub-pixel region 100A and the second sub-pixel region 100B. For example, the center (or centroid) of the width f of the isolation layer 140 adjacent to one side of the first light-emitting layer 130 extending in the direction D2 to the center of the isolation layer 140 adjacent to the opposite side of the foregoing side. The distance between the centers (or centroids) of the width f is the width d of the first sub-pixel region 100A, and the width f of the isolation layer 140 adjacent to the side of the second light-emitting layer 132 extending in the direction D2. The distance from the center (or centroid) of the center to the center (or centroid) of the width f of the isolation layer 140 adjacent to the opposite side of the aforementioned side is the width d of the second sub-pixel region 100B .

The second electrode layer 150 is disposed on the first electrode layer 120. In detail, the second electrode layer 150 may be located in the first sub-pixel region 100A, the second sub-pixel region 100B, and the third sub-pixel region 100C. In this embodiment, the second electrode layer 150 may be a single-layer or multi-layer structure, and its material includes a reflective conductive material (see the description above), a transparent conductive material (see the description above), or both. Of combination. The material of the second electrode layer 150 can be selected according to the type of the pixel structure 10, for example, if the pixel structure 10 can be a top-emission type, the material of the first electrode layer 120 can have a reflective property (that is, the first electrode layer 120 can As a reflective electrode layer), the material of the second electrode layer 150 may be a transparent conductive material (that is, the second electrode layer 150 may be used as a transparent electrode layer); if the pixel structure 10 may be a lower emission type, the The material may be a transparent conductive material (ie, the first electrode layer 120 may serve as a transparent electrode layer), and the material of the second electrode layer 150 may have a reflective property (ie, the second electrode layer 150 may serve as a reflective electrode layer); if the pixel structure 10 It can be a double-sided light-emitting type, and the materials of the first electrode layer 120 and the second electrode layer 150 can be transparent conductive materials (that is, both the first electrode layer 120 and the second electrode layer 150 can be used as transparent electrode layers). That is, the material selection of the first electrode layer 120 and the second electrode layer 150 may be substantially the same or different. Furthermore, in other embodiments, according to the type of the pixel structure 10, for example, an upper-emitting type or a double-sided emitting type, the second electrode layer 150 may also be a semi-transmissive and semi-reflective electrode.

In addition, in this embodiment, the first electrode layer 120 may serve as an anode, and the second electrode layer 150 may serve as a cathode. However, it must be noted that, in terms of design requirements, the first electrode layer 120 may also serve as a cathode, and the second electrode layer 150 may serve as an anode.

In this embodiment, at least the element layer 100, the electrode pattern 120A of the first electrode layer 120, the first light-emitting layer 130, the third light-emitting layer 134, and the second electrode layer 150 located in at least the first sub-pixel region 100A constitute a first A sub-pixel structure U1; at least the element layer 100, the electrode pattern 120B of the first electrode layer 120, the second light-emitting layer 132, the third light-emitting layer 134, and the second electrode layer 150 are located in at least the second sub-pixel region 100B. The second sub-pixel structure U2; and the element layer 100, the electrode pattern 120C of the first electrode layer 120, the third light-emitting layer 134, and the second electrode layer 150 at least in the third sub-pixel region 100C constitute a third sub-picture素 结构 U3. That is, in this embodiment, the pixel structure 10 includes a first sub-pixel structure U1, a second sub-pixel structure U2, and a third sub-pixel structure U3 arranged on the substrate 100. The pixel structure U1 is located in the first sub-pixel area 100A, the second sub-pixel structure U2 is located in the second sub-pixel area 100B, and the third sub-pixel structure U3 is located in the third sub-pixel area 100C.

As described above, in this embodiment, the first light-emitting layer 130 may be a red light-emitting layer, the second light-emitting layer 132 may be a green light-emitting layer, and the third light-emitting layer 134 may be a blue light-emitting layer. The pixel structure U1 can emit red light, the second sub-pixel structure U2 can emit green light, and the third sub-pixel structure U3 can emit blue light, that is, the aforementioned sub-pixel structures U1 to U3 can emit light of different colors, respectively. In other words, the first sub-pixel area 100A has a first light-emitting area (that is, an area that emits light of a first color, for example, the area where the first light-emitting layer 130 is located), and the second sub-pixel area 100B has a second light-emitting area ( That is, an area that emits light of a second color, such as the area where the second light-emitting layer 132 is located, and the third sub-pixel region 100C has a third light-emitting area (area that can emit light of a third color, such as a third light-emitting area) Layer 134), and these three regions emit different colors of light. Therefore, the third light emitting area of the third sub pixel area 100C surrounds the first light emitting area of the first sub pixel area 100A and the second light emitting area of the second sub pixel area 100B, that is, the third sub pixel The third light-emitting area of the area 100C forms two closed accommodation areas. The first light-emitting area of the first sub-pixel area 100A is located in one of the two closed accommodation areas, and the second light-emitting area of the second sub-pixel area 100B. Located in another of two enclosed accommodation areas. In addition, the area of the first light-emitting region is substantially equal to or smaller than the area of the first sub-pixel region 100A, the area of the second light-emitting region is substantially equal to or smaller than the area of the second sub-pixel region 100B, and The area is substantially equal to or smaller than the area of the third sub-pixel area 100C.

As described above, in this embodiment, the first sub-pixel area 100A and the second sub-pixel area 100B are arranged along the direction D1, and the third sub-pixel area 100C surrounds the first sub-pixel area 100A and the second Sub-pixel area 100B, so the first sub-pixel structure U1 and the second sub-pixel structure U2 will be aligned in the direction D1, and the third sub-pixel structure U3 will surround the first sub-pixel structure U1 and the second sub-picture Around the pixel structure U2, that is, the third sub-pixel structure U3 forms two closed accommodation areas. The first sub-pixel structure U1 is located in one of the two closed accommodation areas, and the second sub-pixel structure U2 is located in the two closed areas. The accommodation area is another. In this way, the display quality of the display panel including the pixel structure 10 can be improved.

In this embodiment, a first sub-pixel region 100A provided with a first sub-pixel structure U1, a second sub-pixel region 100B provided with a second sub-pixel structure U2, and a third sub-pixel structure U3 The shape of the third sub-pixel region 100C (for example, the shape of the vertical projection area) may be a rectangle or a rectangle-like shape as an example, but it is not limited thereto. In other embodiments, the first sub-pixel area 100A of the first sub-pixel structure U1, the second sub-pixel area 100B of the second sub-pixel structure U2, and the third sub-pixel structure U3 are provided. The shape of the third sub-pixel region 100C is a polygon, an arc, a shape having a curvature or a bend, or another suitable shape. For example, the third sub-pixel region 100C provided with the third sub-pixel structure U3 may have a first rectangular region (or referred to as a first region) C1 and a second rectangular region (or referred to as a first region) extending in the direction D1. Second region) C2, and a third rectangular region (or third region) C3, a fourth rectangular region (or fourth region) C4, and a fifth rectangular region extending in a direction D2 perpendicular to the direction D1 (Or fifth region) C5 and sixth rectangular region (or sixth region) C6, where the third rectangular region C3, the fourth rectangular region C4, the fifth rectangular region C5, and the sixth rectangular region C6 are between Between the first rectangular region C1 and the second rectangular region C2. Generally speaking, each of the foregoing regions C1 to C6 in the third sub-pixel region 100C may have a sub-light-emitting region, for example, the first region C1 has a first-light-emitting region, and the area of the first-light-emitting region is substantially equal to or It is smaller than the first region C1, and the sub-light-emitting regions (for example, the second-light-emitting region to the sixth-light-emitting region) in the remaining regions C2 to C6 can be deduced by analogy. Therefore, the third light-emitting region in this embodiment includes at least the first to sixth light-emitting regions.

In this embodiment, the first rectangular region C1, the second rectangular region C2, the third rectangular region C3, and the fourth rectangular region C4 collectively surround the first sub-pixel region 100A; and the first rectangular region C1 and the second rectangular region C2, the fifth rectangular region C5 and the sixth rectangular region C6 collectively surround the second sub-pixel region 100B. As mentioned above, in this embodiment, since the third sub-pixel region 100C is enclosed and surrounds the first sub-pixel region 100A and the second sub-pixel region 100B, the first rectangular region C1, the second rectangular region C2, The third rectangular area C3 and the fourth rectangular area C4 are collectively closed and surround the first sub-pixel area 100A; and the first rectangular area C1, the second rectangular area C2, the fifth rectangular area C5, and the sixth rectangular area C6 are collectively closed. Surround the second sub-pixel area 100B. For example, the third rectangular region C3, the fourth rectangular region C4, the fifth rectangular region C5, and the sixth rectangular region C6 connect the first rectangular region C1 and the second rectangular region C2, respectively. In other words, the third light emitting region of the third region C3 connects the first light emitting region of the first region C1 and the second light emitting region of the second region C2, and the fourth light emitting region of the fourth region C4 connects the first The first light-emitting region of the region C1 and the second light-emitting region of the second region C2 form a receiving region surrounding the first sub-pixel region 100A to receive the first light-emitting region of the first sub-pixel region 100A. The fifth emission region of the fifth region C5 connects the first emission region of the first region C1 and the second emission region of the second region C2, and the sixth emission region of the sixth region C6 connects the first emission region of the first region C1. The first light-emitting area and the second light-emitting area of the second area C2 form a receiving area surrounding the second sub-pixel area 100B to receive the second light-emitting area of the second sub-pixel area 100B. In addition, the fourth light emitting region of the fourth region C4 is adjacent to the fifth light emitting region of the fifth region C5, but is not limited thereto. In other embodiments, the third rectangular region C3, the fourth rectangular region C4, the fifth rectangular region C5, and the sixth rectangular region C6 may not respectively connect the first rectangular region C1 and the second rectangular region C2, that is, the third sub-region. The pixel area 100C has a discontinuous outline. In other words, in the third sub-pixel area 100C, the third light-emitting area of the third rectangular area C3, the fourth light-emitting area of the fourth rectangular area C4, the fifth light-emitting area of the fifth rectangular area C5, and The sixth light emitting area of the sixth rectangular area C6 may not be connected to the first light emitting area of the first rectangular area C1 and the second light emitting area of the second rectangular area C2, respectively.

It is worth mentioning that compared with the embodiments in which the third rectangular area C3, the fourth rectangular area C4, the fifth rectangular area C5, and the sixth rectangular area C6 may not respectively connect the first rectangular area C1 and the second rectangular area C2, The embodiment in which the third rectangular area C3, the fourth rectangular area C4, the fifth rectangular area C5, and the sixth rectangular area C6 respectively connect the first rectangular area C1 and the second rectangular area C2 may have a maximum light emitting area.

On the other hand, in this embodiment, the width d of the first and second sub-pixel regions 100A and 100B and the first and second rectangular regions C1, C2, and C2 of the third and second sub-pixel regions 100C. The width b of the third rectangular area C3, the fourth rectangular area C4, the fifth rectangular area C5, and the sixth rectangular area C6 satisfies the following specific relationship: b <0.25d. It is worth mentioning that the pixel structure 10 is arranged along the direction D1 through the first sub-pixel area 100A provided with the first sub-pixel structure U1 and the second sub-pixel area 100B provided with the second sub-pixel structure U2. , A third sub-pixel region 100C provided with a third sub-pixel structure U3 surrounds the first sub-pixel region 100A and the second sub-pixel region 100B, and b <0.25d, so that the respective sizes are 3d × d The RGB sub-pixel structure (or strip) is arranged in a sequential and close manner (that is, there is no space that can accommodate other sub-pixel structures between the sequential sub-pixel structures) The display panel including the pixel structure 10 may have an increased aperture ratio at substantially the same pixel density, and may have an increased pixel density at substantially the same aperture ratio compared to a display panel having a structure. That is, compared with a display panel including a conventional pixel structure in which the RGB sub-pixel structures each having a size of 3d × d (or a stripe) are arranged in order and in close proximity, the pixel panel includes a pixel structure 10 The display panel may have improved resolution.

In addition, in this embodiment, at least one of the first sub-pixel structure U1, the second sub-pixel structure U2, and the third sub-pixel structure U3 is provided between the first electrode layer 120 and the second electrode layer 150. The light emitting layer 130, the second light emitting layer 132, and the third light emitting layer 134 are not limited thereto. In other embodiments, in the first sub-pixel structure U1, the second sub-pixel structure U2, and the third sub-pixel structure U3, the following may be further provided between the first electrode layer 120 and the second electrode layer 150: At least one of the film layers: a hole injection layer (HIL), a hole transport layer (HTL), an electron injection layer (EIL), an electron transport layer , ETL), or other suitable coatings.

In addition, in the embodiment of FIGS. 1 and 2, the third light-emitting layer 134 does not need to use a mask, such as FMM, but is not limited thereto. In other embodiments, the third light-emitting layer 134 can also be formed by using a mask, such as FMM. Hereinafter, other embodiments will be described with reference to FIGS. 3 and 4. It must be noted here that the following embodiments use the component symbols and part of the content of the foregoing embodiments, in which the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

3 is a schematic top view of a pixel structure according to a second embodiment of the present invention. Fig. 4 is a schematic cross-sectional view taken along the line B-B 'in Fig. 3. Please refer to FIGS. 3 and 4 and FIGS. 1 and 2 at the same time. The pixel structure 20 of this embodiment is similar to the pixel structure 10 of the first embodiment. The difference is mainly in the arrangement of the light-emitting layers. The differences are described, and the rest can be referred to above, and will not be described again. In addition, for convenience of explanation, the second electrode layer 150 is not shown in FIG. 3.

Please refer to FIGS. 3 and 4 at the same time. In this embodiment, the third light emitting layer 234 disposed between the first electrode layer 120 and the second electrode layer 150 may be located only in the third sub-pixel region 100C. That is, in this embodiment, the first light emitting layer 130, the second light emitting layer 132, and the third light emitting layer 234 do not overlap each other.

In this embodiment, the third light-emitting layer 234 is formed using, for example, an evaporation process or an inkjet process and a corresponding mask, such as a fine metal mask (FMM). In detail, in this embodiment, the method for preparing the third light-emitting layer 234 includes, for example, using a vapor deposition process or an inkjet process and a mask with a plurality of openings extending in the direction D1, for example, FMM to form a substrate. The third light-emitting layer 234 in the first rectangular area C1 and the second rectangular area C2, and a mask using a vapor deposition process or an inkjet process with a plurality of openings extending in the direction D2, for example, FMM to form The third light emitting layer 234 in the three rectangular regions C3, the fourth rectangular region C4, the fifth rectangular region C5, and the sixth rectangular region C6. That is, in this embodiment, at least two masks are required to prepare the third light-emitting layer 234, for example, FMM. In addition, in this embodiment, the third light emitting layer 234 may be a blue light emitting layer. That is, in this embodiment, the third light emitting layer 234 may include a blue light emitting material.

In this embodiment, the element layer 100 located in the first sub-pixel region 100A, the electrode pattern 120A of the first electrode layer 120, the first light-emitting layer 130, and the second electrode layer 150 constitute a first sub-pixel structure 2U1. ; The element layer 100 located in the second sub-pixel region 100B, the electrode pattern 120B of the first electrode layer 120, the second light-emitting layer 132, and the second electrode layer 150 constitute a second sub-pixel structure 2U2; and The element layer 100 in the sub-pixel region 100C, the electrode pattern 120C of the first electrode layer 120, the third light-emitting layer 234, and the second electrode layer 150 constitute a third sub-pixel structure 2U3. That is, the pixel structure 20 includes a first sub-pixel structure 2U1, a second sub-pixel structure 2U2, and a third sub-pixel structure 2U3 arranged on the substrate 100, where the first sub-pixel structure 2U1 is located at the first In the sub-pixel area 100A, the second sub-pixel structure 2U2 is located in the second sub-pixel area 100B, and the third sub-pixel structure 2U3 is located in the third sub-pixel area 100C.

As described above, in this embodiment, the first light-emitting layer 130 may be a red light-emitting layer, the second light-emitting layer 132 may be a green light-emitting layer, and the third light-emitting layer 234 may be a blue light-emitting layer. The pixel structure 2U1 can be used to emit red light, the second sub-pixel structure 2U2 can be used to emit green light, and the third sub-pixel structure 2U3 can be used to emit blue light, that is, the aforementioned sub-pixel structures 2U1 to 2U3 can respectively emit different colors. Light.

As described above, in this embodiment, the first sub-pixel area 100A and the second sub-pixel area 100B are arranged along the direction D1, and the third sub-pixel area 100C surrounds the first sub-pixel area 100A and the second Sub-pixel area 100B, so the first sub-pixel structure 2U1 and the second sub-pixel structure 2U2 will be aligned in the direction D1, and the third sub-pixel structure 2U3 will surround the first sub-pixel structure 2U1 and the second sub-picture Prime structure around 2U2. In this way, the display quality of the display panel including the pixel structure 20 can be improved.

The pixel structure 20 is arranged in the direction D1 through a first sub-pixel area 100A provided with a first sub-pixel structure 2U1 and a second sub-pixel area 100B provided with a second sub-pixel structure 2U2, and a third sub-pixel is provided. The third sub-pixel area 100C of the pixel structure 2U3 surrounds the first sub-pixel area 100A and the second sub-pixel area 100B, and b <0.25d, so that the size of the sub-pixel area is 3d × d (or a stripe). ) The RGB sub-pixel structure is arranged in a sequential and close manner (that is, there is no space to accommodate other sub-pixel structures between the ordered sub-pixel structures) The display panel including the pixel structure 20 may have an increased aperture ratio at substantially the same pixel density, and may have an increased pixel density at substantially the same aperture ratio. That is, compared with a display panel including a conventional pixel structure in which the RGB sub-pixel structures each having a size of 3d × d (or a stripe) are arranged in a sequential and close manner, the pixel panel includes a pixel structure 20 The display panel may have improved resolution.

In addition, in the embodiments of FIGS. 1 and 2, although the third rectangular regions C3 and C4 are located on opposite sides of the first sub-pixel region 100A, and the fifth rectangular region C5 and the sixth rectangular region C6 are located, respectively. They are respectively located on opposite sides of the second sub-pixel region 100B, but the present invention is not limited thereto. Hereinafter, other embodiments will be described with reference to FIGS. 5 and 6. It must be noted here that the following embodiments use the component symbols and part of the content of the foregoing embodiments, in which the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following implementation manners are not repeated.

5 is a schematic top view of a pixel structure according to a third embodiment of the present invention. Fig. 6 is a schematic cross-sectional view taken along the line C-C 'in Fig. 5. Please refer to FIGS. 5 and 6 and FIGS. 1 and 2 at the same time. The pixel structure 30 of this embodiment is similar to the pixel structure 10 of the first embodiment. The difference lies mainly in the arrangement of the sub-pixel regions. The differences are explained, and the rest can be referred to above and will not be described again. In addition, for convenience of explanation, the third light-emitting layer 134 and the second electrode layer 150 are not shown in FIG. 5.

Please refer to FIGS. 5 and 6 at the same time. In this embodiment, the third sub-pixel region 100C provided with the third sub-pixel structure U3 has a first rectangular region (or first region) C1 extending in the direction D1. And a second rectangular area (or second area) C2, and a third rectangular area (or third area) 3C3, a fourth rectangular area (or fourth area) 3C4, Five rectangular regions (or fifth regions) 3C5 and sixth rectangular regions (or sixth regions) 3C6, where the third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 is between the first rectangular region C1 and the second rectangular region C2.

In detail, in this embodiment, the third rectangular region 3C3 and the fourth rectangular region 3C4 are located on one side of the first sub-pixel region 100A (eg, the first side of the pixel structure 30), and the fifth rectangular region is 3C5 and the sixth rectangular region 3C6 are located on the other side of the first sub-pixel region 100A (eg, the second side of the pixel structure 30). This can also be regarded as the fifth rectangular region 3C5 and the sixth rectangular region 3C6 on the second The side of the sub-pixel region 100B far from the first sub-pixel region 100A (eg, the second side of the pixel structure 30), that is, the second sub-pixel region 100B is located in the first sub-pixel region 100A and the fifth rectangle. Between the region 3C5 and the sixth rectangular region 3C6. That is, the first sub-pixel area 100A and the second sub-pixel area 100B are close to each other, that is, there is no accommodating other sub-pixel areas between the first sub-pixel area 100A and the second sub-pixel area 100B. Space (for example: there is no part of the third sub-pixel area 100C), and the third rectangular area 3C3 and the fourth rectangular area 3C4 are located next to each other on the side of the first sub-pixel area 100A (eg, the pixel structure 30 (The first side of the pixel structure), and the fifth rectangular region 3C5 and the sixth rectangular region 3C6 are located next to each other on the other side of the first sub-pixel region 100A (eg, the second side of the pixel structure 30).

Further, in this embodiment, the first rectangular region C1, the second rectangular region C2, the third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 collectively surround the first sub-region. The pixel area 100A and the second sub-pixel area 100B. As mentioned above, in this embodiment, since the third sub-pixel region 100C is enclosed and surrounds the first sub-pixel region 100A and the second sub-pixel region 100B, the first rectangular region C1, the second rectangular region C2, The third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 collectively enclose the first sub-pixel region 100A and the second sub-pixel region 100B. That is, in this embodiment, the third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 connect the first rectangular region C1 and the second rectangular region C2, respectively. However, the present invention is not limited to this. In other embodiments, the third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 may not connect the first rectangular region C1 and the second rectangular region C2, respectively. That is, the third sub-pixel region 100C has a discontinuous outline. In this embodiment, compared with the third rectangular area 3C3, the fourth rectangular area 3C4, the fifth rectangular area 3C5, and the sixth rectangular area 3C6, the first rectangular area C1 and the second rectangular area C2 may not be connected respectively. The embodiment in which the third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 respectively connect the first rectangular region C1 and the second rectangular region C2 may have a maximum light emitting region.

On the other hand, in this embodiment, the width d of the first and second sub-pixel regions 100A and 100B and the first and second rectangular regions C1, C2, and C2 of the third and second sub-pixel regions 100C. The width b of the third rectangular region 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6 satisfies the following specific relationship: b <0.25d. It is worth mentioning that the pixel structure 30 is arranged in the direction D1 through the first sub-pixel area 100A provided with the first sub-pixel structure U1 and the second sub-pixel area 100B provided with the second sub-pixel structure U2. , A third sub-pixel region 100C provided with a third sub-pixel structure U3 surrounds the first sub-pixel region 100A and the second sub-pixel region 100B, and b <0.25d, so that the respective sizes are 3d × d The RGB sub-pixel structure (or strip) is arranged in a sequential and close manner (that is, there is no space that can accommodate other sub-pixel structures between the sequential sub-pixel structures) Compared with a structured display panel, a display panel including the pixel structure 30 may have an increased aperture ratio at substantially the same pixel density, and may have an increased pixel density at substantially the same aperture ratio. That is, compared with a display panel including a conventional pixel structure in which the RGB sub-pixel structures each having a size of 3d × d (or a stripe) are arranged in order and in close proximity, the pixel panel includes a pixel structure 30 The display panel may have improved resolution.

Based on the first embodiment, it is known that the pixel structure 30 is arranged along the direction D1 through the first sub-pixel structure U1 and the second sub-pixel structure U2, and the third sub-pixel structure U3 surrounds the first sub-pixel structure U1. With the second sub-pixel structure U2, the display quality of the display panel including the pixel structure 30 can be improved.

In addition, based on the first embodiment, it can be known that, in the embodiment of FIGS. 5 and 6, although the third light-emitting layer 134 does not need to be formed with a mask, such as FMM, the present invention is not limited thereto. In other embodiments, the third light-emitting layer 134 can also be formed by using a mask, such as FMM. Hereinafter, other embodiments will be described with reference to FIGS. 7 and 8. It must be noted here that the following embodiments use the component symbols and part of the content of the foregoing embodiments, in which the same or similar symbols are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

FIG. 7 is a schematic top view of a pixel structure according to a fourth embodiment of the present invention. Fig. 8 is a schematic cross-sectional view taken along a section line D-D 'in Fig. 7. Please refer to FIGS. 7 and 8 and FIGS. 5 and 6 at the same time. The pixel structure 40 of this embodiment is similar to the pixel structure 30 of the third embodiment. The difference lies mainly in the arrangement of the light-emitting layers. The differences are described, and the rest can be referred to above, and will not be described again. In addition, for convenience of explanation, the second electrode layer 150 is not shown in FIG. 7.

Please refer to FIGS. 7 and 8 at the same time. In this embodiment, the third light-emitting layer 434 disposed between the first electrode layer 120 and the second electrode layer 150 may be located only in the third sub-pixel region 100C. That is, in this embodiment, the first light emitting layer 130, the second light emitting layer 132, and the third light emitting layer 434 do not overlap each other.

In this embodiment, the third light-emitting layer 434 is formed using, for example, an evaporation process or an inkjet process and a corresponding mask, such as a fine metal mask (FMM). In detail, in this embodiment, the method for preparing the third light-emitting layer 434 includes, for example, using a vapor deposition process or an inkjet process and a mask having a plurality of openings extending in the direction D1, for example, FMM to form a substrate. The third light-emitting layer 434 in the first rectangular region C1 and the second rectangular region C2, and a mask using a vapor deposition process or an inkjet process with a plurality of openings extending in the direction D2, for example, FMM to form The third light emitting layer 434 in the three rectangular regions 3C3, the fourth rectangular region 3C4, the fifth rectangular region 3C5, and the sixth rectangular region 3C6. That is, in this embodiment, at least two masks are required to prepare the third light-emitting layer 434, for example, FMM. In addition, in this embodiment, the third light emitting layer 434 may be a blue light emitting layer. That is, in this embodiment, the third light emitting layer 434 includes a blue light emitting material.

Further, in this embodiment, the element layer 100 located in the first sub-pixel region 100A, the electrode pattern 120A of the first electrode layer 120, the first light-emitting layer 130, and the second electrode layer 150 constitute a first sub-pixel. The pixel structure 4U1; the element layer 100, the electrode pattern 120B of the first electrode layer 120, the second light emitting layer 132, and the second electrode layer 150 in the second sub-pixel region 100B constitute a second sub-pixel structure 4U2; The element layer 100, the electrode pattern 120C of the first electrode layer 120, the third light-emitting layer 234, and the second electrode layer 150 in the third sub-pixel region 100C constitute a third sub-pixel structure 4U3. That is, in this embodiment, the pixel structure 40 includes a first sub-pixel structure 4U1, a second sub-pixel structure 4U2, and a third sub-pixel structure 4U3 arranged on the substrate 100. The pixel structure 4U1 is located in the first sub-pixel area 100A, the second sub-pixel structure 4U2 is located in the second sub-pixel area 100B, and the third sub-pixel structure 4U3 is located in the third sub-pixel area 100C.

As described above, in this embodiment, the first light-emitting layer 130 may be a red light-emitting layer, the second light-emitting layer 132 may be a green light-emitting layer, and the third light-emitting layer 434 may be a blue light-emitting layer. The pixel structure 4U1 can be used to emit red light, the second sub-pixel structure 4U2 can be used to emit green light, and the third sub-pixel structure 4U3 can be used to emit blue light, that is, the aforementioned sub-pixel structures 4U1 to 4U3 can respectively emit different colors. Light.

As described above, in this embodiment, the first sub-pixel area 100A and the second sub-pixel area 100B are arranged along the direction D1, and the third sub-pixel area 100C surrounds the first sub-pixel area 100A and the second Sub-pixel area 100B, so the first sub-pixel structure 4U1 and the second sub-pixel structure 4U2 will be aligned in the direction D1, and the third sub-pixel structure 4U3 will surround the first sub-pixel structure 4U1 and the second sub-picture素 结构 4U2. In this way, the display quality of the display panel including the pixel structure 40 can be improved.

On the other hand, as described above, the pixel structure 40 passes along the first sub-pixel area 100A provided with the first sub-pixel structure 4U1 and the second sub-pixel area 100B provided with the second sub-pixel structure 4U2. Arranged in the direction D1, a third sub-pixel region 100C provided with a third sub-pixel structure 4U3 surrounds the first sub-pixel region 100A and the second sub-pixel region 100B, and b <0.25d, so that The 3D × d (or stripe) RGB sub-pixel structure is arranged in a sequential and close manner (that is, there is no space to accommodate other sub-pixel structures between sequential sub-pixel structures) Compared with a display panel with a known pixel structure, a display panel including the pixel structure 40 may have an increased aperture ratio at substantially the same pixel density, and may have an increased pixel density at substantially the same aperture ratio. . That is, compared with a display panel including a conventional pixel structure in which the RGB sub-pixel structures each having a size of 3d × d (or a stripe) are arranged in order and in close proximity, the pixel panel includes a pixel structure 40 The display panel may have improved resolution.

Furthermore, in the foregoing embodiment, preferably, the first electrode pattern 120A in the first sub-pixel region 100A, the second electrode pattern 120B in the second sub-pixel region 100B, and the third sub-pixel region 100B The corresponding thin-film transistors to which the third electrode pattern 120C is connected are different, but are not limited thereto. In other embodiments, the first electrode pattern 120A in any two adjacent first sub-pixel regions 100A, the second electrode pattern 120B in the second sub-pixel region 100B, and the third electrode sub-pixel region 100B The third electrode pattern 120C may be connected to the same thin film transistor. In addition, the type of the thin film transistor can be a bottom gate type, a top gate type, or other suitable types. The thin film transistor, capacitor, or other suitable components included in the element layer 110 may be located in the corresponding first sub-pixel area 100A, the second sub-pixel area 100B, and the third sub-pixel area 100C, respectively, but it is not limited thereto . In other embodiments, the thin film transistor, capacitor, or other suitable components included in the element layer 110 may be located in only one of the three sub-pixel regions 100A to 100C, or may be located in the three sub-pixel regions 100A. Two of ~ 100C. In addition, in the foregoing embodiments, each sub-pixel structure (that is, the first sub-pixel structure U1, 2U1, 4U1, the second sub-pixel structure U2, 2U2, 4U2, or the third sub-pixel structure U3, 2U3 , 4U3), each sub-pixel area (ie, the first sub-pixel area 100A, the second sub-pixel area 100B, or the third sub-pixel area 100C), the light-emitting area of each of the aforementioned sub-pixel areas, and each area C1 ~ The shape (for example, the shape of the vertical projection area) of at least one of C6 and the sub-light-emitting areas of each of the areas C1 to C6 is exemplified by a rectangle or a rectangle-like shape, but is not limited thereto. In other embodiments, at least each of the sub-pixel structure, each sub-pixel region, the aforementioned light-emitting region of each of the sub-pixel regions, each of the regions C1 to C6, and the sub-light-emitting regions of each of the regions C1 to C6 is at least The shape of one (for example, the shape of the vertical projection area) may also be a polygon, an arc, a shape having a curvature or a bend, or other suitable shapes.

In summary, in the pixel structure of the present invention, the first sub-pixel structure and the second sub-pixel structure are arranged in a direction, and the third sub-pixel structure surrounds the first sub-pixel structure and the second sub-pixel structure. The pixel structure, thereby improving the display quality of the display panel including the pixel structure of the present invention. In addition, in the pixel structure of the present invention, a first sub-pixel area provided with a first sub-pixel structure and a second sub-pixel area provided with a second sub-pixel structure are aligned in one direction, and a first The third sub pixel region of the three sub pixel structure surrounds the first sub pixel region and the second sub pixel region, and the width d of the first sub pixel region and the second sub pixel region and the third sub pixel region The width b of the first rectangular region, the second rectangular region, the third rectangular region, the fourth rectangular region, the fifth rectangular region, and the sixth rectangular region of the regions satisfies the following specific relationship: b <0.25d, thereby including the present The display panel with the pixel structure of the invention can have improved resolution.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

10, 20, 30, 40‧‧‧ pixel structure

100‧‧‧ substrate

100A‧‧‧first sub pixel area

100B‧‧‧second sub pixel area

100C‧‧‧third sub pixel area

110‧‧‧component layer

120‧‧‧first electrode layer

120A, 120B, 120C‧‧‧ electrode pattern

130‧‧‧first luminescent layer

132‧‧‧Second luminous layer

134, 234, 434‧‧‧ third light emitting layer

140‧‧‧Isolation layer

150‧‧‧second electrode layer

b, d, f‧‧‧width

C1, C2, C3, 3C3, C4, 3C4, C5, 3C5, C6, 3C6

D1, D2‧‧‧ direction

V1, V2‧‧‧ opening

U1, 2U1, 4U1‧‧‧ the first sub pixel structure

U2, 2U2, 4U2‧‧‧ second sub-pixel structure

U3, 2U3, 4U3 ‧‧‧ third sub pixel structure

FIG. 1 is a schematic top view of a pixel structure according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view taken along the line A-A 'in Fig. 1. 3 is a schematic top view of a pixel structure according to a second embodiment of the present invention. Fig. 4 is a schematic cross-sectional view taken along the line B-B 'in Fig. 3. 5 is a schematic top view of a pixel structure according to a third embodiment of the present invention. Fig. 6 is a schematic cross-sectional view taken along the line C-C 'in Fig. 5. FIG. 7 is a schematic top view of a pixel structure according to a fourth embodiment of the present invention. Fig. 8 is a schematic cross-sectional view taken along a section line D-D 'in Fig. 7.

Claims (10)

A pixel structure includes: a substrate; and a first sub-pixel structure, a second sub-pixel structure, and a third sub-pixel structure, which are arranged on the substrate, wherein the first sub-pixel structure and The second sub-pixel structure is arranged along a first direction, and the third sub-pixel structure surrounds the first sub-pixel structure and the second sub-pixel structure, wherein the substrate includes a first sub-pixel region A second sub-pixel region and a third sub-pixel region, wherein the first sub-pixel structure is located in the first sub-pixel region and the second sub-pixel structure is located in the second sub-pixel region And the third sub-pixel structure is located in the third sub-pixel region, and wherein the first sub-pixel structure includes a first light-emitting layer, and the second sub-pixel structure includes a second light-emitting layer, The third sub-pixel structure includes a third light-emitting layer. The pixel structure according to item 1 of the scope of patent application, wherein the shape of the first sub-pixel area and the second sub-pixel area are rectangular, and the third sub-pixel area has a shape extending along the first direction. A first rectangular area and a second rectangular area, and a third rectangular area, a fourth rectangular area, a fifth rectangular area, and a sixth rectangular area extending along a second direction, wherein the first direction and The second direction is perpendicular, and the third rectangular region, the fourth rectangular region, the fifth rectangular region, and the sixth rectangular region are interposed between the first rectangular region and the second rectangular region. The pixel structure according to item 2 of the scope of the patent application, wherein the first sub pixel region and the second sub pixel region each have a width d, the first rectangular region, the second rectangular region, and the third The rectangular region, the fourth rectangular region, the fifth rectangular region, and the sixth rectangular region have a width b, and b <0.25d. The pixel structure according to item 2 of the scope of patent application, wherein: the first rectangular region, the second rectangular region, the third rectangular region, and the fourth rectangular region jointly surround the first sub pixel region; and The first rectangular region, the second rectangular region, the fifth rectangular region, and the sixth rectangular region collectively surround the second sub-pixel region. The pixel structure according to item 2 of the scope of patent application, wherein the third rectangular region and the fourth rectangular region are located on one side of the first sub pixel region, and the fifth rectangular region and the sixth rectangular region are located The other side of the first sub-pixel region, and the first rectangular region, the second rectangular region, the third rectangular region, the fourth rectangular region, the fifth rectangular region, and the sixth rectangular region are all surrounded together The first sub-pixel region and the second sub-pixel region. The pixel structure according to item 2 of the scope of patent application, wherein the third rectangular region, the fourth rectangular region, the fifth rectangular region, and the sixth rectangular region connect the first rectangular region and the second rectangular region, respectively. region. The pixel structure according to item 1 of the application, wherein the third light-emitting layer further covers the first light-emitting layer and the second light-emitting layer. The pixel structure according to item 1 of the patent application scope, wherein the first light-emitting layer is located only in the first sub-pixel area, the second light-emitting layer is located only in the second sub-pixel area, and the third The light emitting layer is located only in the third sub-pixel region. The pixel structure according to item 1 of the application, wherein the first light-emitting layer is a red light-emitting layer, the second light-emitting layer is a green light-emitting layer, and the third light-emitting layer is a blue light-emitting layer. The pixel structure according to item 1 of the scope of patent application, wherein the shape of the pixel structure is a square.