TWI678802B - Display panel and method for manufacturing the same - Google Patents
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Abstract
一種顯示面板,具有顯示區及圍繞顯示區之周邊區,且顯示面板包含第一基板、第二基板、介電層以及膠體層。第一基板及第二基板相對設置,其中第一基板具有第一區域以及第二區域,第二區域位在周邊區內並相對第一區域遠離顯示區,且第一基板於第二區域的表面粗糙度大於第一基板於第一區域的表面粗糙度。介電層設置於第一基板上並覆蓋在第一區域之上,其中介電層與第一基板之間的交界面邊界切齊第一區域與第二區域之間的交界線。膠體層設置於第一基板與第二基板之間,並覆蓋第二區域。 A display panel includes a display area and a peripheral area surrounding the display area. The display panel includes a first substrate, a second substrate, a dielectric layer, and a colloid layer. The first substrate and the second substrate are oppositely disposed, wherein the first substrate has a first region and a second region, the second region is located in the peripheral region and is far from the display region with respect to the first region, and the first substrate is on the surface of the second region The roughness is greater than the surface roughness of the first substrate in the first region. The dielectric layer is disposed on the first substrate and covers the first region. The interface boundary between the dielectric layer and the first substrate is aligned with the boundary line between the first region and the second region. The colloid layer is disposed between the first substrate and the second substrate, and covers the second area.
Description
本揭露內容是有關於一種顯示面板及其製作方法。 This disclosure relates to a display panel and a manufacturing method thereof.
於家用電器設備的各式電子產品之中,顯示面板已經被廣泛地使用來輸出影像或是操作選單。因應目前消費市場的潮流,這些帶有顯示面板的電子產品漸趨向為窄邊框設計。 Among various electronic products of household appliances, display panels have been widely used to output images or operate menus. In response to the current trend in the consumer market, these electronic products with display panels are gradually designed with narrow bezels.
對此,於顯示面板的製作過程中,會先透過膠體層將基板與對向基板黏合,並再透過切割母片而將各面板分離。換言之,基板與對向基板之間的黏合關係是由膠體層維持。而在目前電子產品朝向窄邊框設計的情況下,若為了縮小邊框而過度減少膠體層的配置面積,則將會降低基板與對向基板之間的黏合關係,並使得顯示面板的結構強度因此降低。 In this regard, in the manufacturing process of the display panel, the substrate is first adhered to the opposite substrate through the colloidal layer, and then each panel is separated by cutting the mother sheet. In other words, the adhesion relationship between the substrate and the opposing substrate is maintained by the colloidal layer. In the current design of electronic products with narrow bezels, if the arrangement area of the colloidal layer is excessively reduced in order to reduce the bezel, the bonding relationship between the substrate and the opposite substrate will be reduced, and the structural strength of the display panel will therefore be reduced. .
本揭露內容之一實施方式提供一種顯示面板,具有顯示區及圍繞顯示區之周邊區,且顯示面板包含第一基板、 第二基板、介電層以及膠體層。第一基板及第二基板相對設置,其中第一基板具有第一區域以及第二區域,第二區域位在周邊區內並相對第一區域遠離顯示區,且第一基板於第二區域的表面粗糙度大於第一基板於第一區域的表面粗糙度。介電層設置於第一基板上並覆蓋在第一區域之上,其中介電層與第一基板之間的交界面邊界切齊第一區域與第二區域之間的交界線。膠體層設置於第一基板與第二基板之間,並覆蓋第二區域。 An embodiment of the present disclosure provides a display panel having a display area and a peripheral area surrounding the display area, and the display panel includes a first substrate, A second substrate, a dielectric layer, and a colloid layer. The first substrate and the second substrate are oppositely disposed, wherein the first substrate has a first region and a second region, the second region is located in the peripheral region and is far from the display region with respect to the first region, and the first substrate is on the surface of the second region The roughness is greater than the surface roughness of the first substrate in the first region. The dielectric layer is disposed on the first substrate and covers the first region. The interface boundary between the dielectric layer and the first substrate is aligned with the boundary line between the first region and the second region. The colloid layer is disposed between the first substrate and the second substrate, and covers the second area.
於部分實施方式中,介電層接觸膠體層,且介電層與膠體層的交界面於第一基板的垂直投影切齊第一區域與第二區域之間的交界線。 In some embodiments, the dielectric layer is in contact with the colloidal layer, and the interface between the dielectric layer and the colloidal layer is perpendicular to the first substrate to align the boundary between the first region and the second region.
於部分實施方式中,顯示面板更包含介電材料。介電材料填充於介電層與膠體層之間,並與膠體層共同覆蓋第二區域。 In some embodiments, the display panel further includes a dielectric material. A dielectric material is filled between the dielectric layer and the colloidal layer, and covers the second area together with the colloidal layer.
於部分實施方式中,第一基板於第二區域的表面粗糙度沿著遠離顯示區之方向漸增。 In some embodiments, the surface roughness of the first substrate in the second region gradually increases in a direction away from the display area.
於部分實施方式中,第二區域完全由該膠體層覆蓋。 In some embodiments, the second region is completely covered by the colloid layer.
於部分實施方式中,第一基板更具有第三區域,第二區域位在第一區域與第三區域之間,且第一基板於第二區域的表面粗糙度大於第一基板於第三區域的表面粗糙度,其中膠體層更覆蓋第三區域。 In some embodiments, the first substrate further has a third region, the second region is located between the first region and the third region, and the surface roughness of the first substrate in the second region is greater than that of the first substrate in the third region. Surface roughness, in which the colloidal layer covers the third area more.
於部分實施方式中,第一基板於第二區域的表面粗糙度為R微米,且0<R≦1。 In some embodiments, the surface roughness of the first substrate in the second region is R microns, and 0 <R ≦ 1.
於部分實施方式中,顯示面板更包含有機發光二 極體。有機發光二極體配置於顯示區內。 In some embodiments, the display panel further includes an organic light emitting diode. Polar body. The organic light emitting diode is disposed in the display area.
本揭露內容之一實施方式提供一種顯示面板的製作方法,包含以下步驟。形成顯示元件在顯示面板的顯示區。形成介電層在顯示面板的周邊區與顯示區,並覆蓋顯示元件,且周邊區內的介電層之厚度沿著遠離顯示區之方向漸減。移除周邊區內的介電層,以暴露出位在周邊區內的介電層下方的基板之區域,其中移除周邊區內的介電層之過程係為非等向性的,並致使基板之區域的表面粗糙度增加。 An embodiment of the present disclosure provides a method for manufacturing a display panel, including the following steps. A display element is formed on a display area of the display panel. A dielectric layer is formed in the peripheral area and the display area of the display panel and covers the display element, and the thickness of the dielectric layer in the peripheral area gradually decreases in a direction away from the display area. The dielectric layer in the peripheral region is removed to expose the area of the substrate located below the dielectric layer in the peripheral region. The process of removing the dielectric layer in the peripheral region is anisotropic and causes The surface roughness of the area of the substrate is increased.
於部分實施方式中,的顯示面板的製作方法更包括形成膠體層在顯示面板的周邊區,並覆蓋基板之區域。 In some embodiments, the method for manufacturing a display panel further includes forming a colloid layer on a peripheral region of the display panel and covering a region of the substrate.
於部分實施方式中,基板於區域的表面粗糙度沿著遠離顯示區之方向漸增。 In some embodiments, the surface roughness of the substrate in the area gradually increases in a direction away from the display area.
於部分實施方式中,移除周邊區內的介電層的步驟包含發射雷射光束至周邊區內的介電層,以移除周邊區內的介電層,其中雷射光束的波長落在紫外光區間或是紅外光區間。 In some embodiments, the step of removing the dielectric layer in the peripheral region includes emitting a laser beam to the dielectric layer in the peripheral region to remove the dielectric layer in the peripheral region. The wavelength of the laser beam falls on Ultraviolet or infrared light.
藉由上述配置,在顯示面板在製作階段時,可將周邊區內之多餘的介電層自第一基板上移除,使得後續所形成之膠體層可更靠近顯示區,以使顯示面板可適於應用為窄邊框結構。另一方面,在將多餘的介電層移除的過程中,第一基板會因移除手段而增加粗糙度並可視為具有微結構。當所形成之膠體層是覆蓋在微結構上的時候,可增加膠體層對第一基板的接觸面積,以提升膠體層對第一基板的黏著能力。 With the above configuration, when the display panel is in the manufacturing stage, the excess dielectric layer in the peripheral region can be removed from the first substrate, so that the colloidal layer formed later can be closer to the display area, so that the display panel can be used. Suitable for applications with a narrow bezel structure. On the other hand, during the process of removing the excess dielectric layer, the first substrate may increase the roughness due to the removal method and may be regarded as having a microstructure. When the formed colloid layer is covered on the microstructure, the contact area of the colloid layer to the first substrate can be increased, so as to improve the adhesive ability of the colloid layer to the first substrate.
100A、100B、100C、100D、100E‧‧‧顯示面板 100A, 100B, 100C, 100D, 100E‧‧‧ display panel
102‧‧‧顯示區 102‧‧‧display area
104‧‧‧周邊區 104‧‧‧Peripheral area
110‧‧‧第一基板 110‧‧‧first substrate
111‧‧‧微結構 111‧‧‧microstructure
112‧‧‧第一介電層 112‧‧‧first dielectric layer
114‧‧‧平坦層 114‧‧‧ flat layer
116‧‧‧第二介電層 116‧‧‧Second dielectric layer
118‧‧‧第三介電層 118‧‧‧Third dielectric layer
120‧‧‧導電層 120‧‧‧ conductive layer
130‧‧‧顯示元件 130‧‧‧Display element
132‧‧‧第一電極層 132‧‧‧first electrode layer
134‧‧‧發光層 134‧‧‧Light-emitting layer
136‧‧‧第二電極層 136‧‧‧Second electrode layer
140‧‧‧第四介電層 140‧‧‧ fourth dielectric layer
140A‧‧‧厚度漸減部分 140A‧‧‧thickness decrease
140B‧‧‧其他部分 140B‧‧‧Other parts
150‧‧‧膠體層 150‧‧‧ colloid layer
160‧‧‧第二基板 160‧‧‧second substrate
162‧‧‧介電材料 162‧‧‧Dielectric
1B-1B’、3B-3B’‧‧‧線段 1B-1B ’, 3B-3B’‧‧‧ line segments
A1‧‧‧第一區域 A1‧‧‧First Zone
A2‧‧‧第二區域 A2‧‧‧Second Zone
A3‧‧‧第三區域 A3‧‧‧Third Zone
L1‧‧‧距離 L1‧‧‧Distance
TH‧‧‧接觸洞 TH‧‧‧contact hole
T1、T2、T3、T4‧‧‧厚度 T1, T2, T3, T4‧‧‧thickness
W1、W2、W3、W4、W5、W6、W7、W8‧‧‧寬度 W1, W2, W3, W4, W5, W6, W7, W8‧‧‧Width
第1A圖為根據本揭露內容的第一實施方式繪示顯示面板的製作方法於製作階段中的上視示意圖。 FIG. 1A is a schematic top view illustrating a manufacturing method of a display panel in a manufacturing stage according to a first embodiment of the present disclosure.
第1B圖為沿第1A圖的線段1B-1B’的剖面示意圖。 Fig. 1B is a schematic cross-sectional view taken along line 1B-1B 'of Fig. 1A.
第2A圖為根據本揭露內容的第一實施方式繪示顯示面板的製作方法於製作階段中的剖面示意圖。 FIG. 2A is a schematic cross-sectional view illustrating a method for manufacturing a display panel in a manufacturing stage according to a first embodiment of the present disclosure.
第2B圖為第2A圖的第一基板的第二區域之一部分的放大示意圖 FIG. 2B is an enlarged schematic view of a part of the second region of the first substrate of FIG. 2A
第3A圖為根據本揭露內容的部分實施方式繪示顯示面板的製作方法於製作階段中的上視示意圖。 FIG. 3A is a schematic top view illustrating a manufacturing method of a display panel in a manufacturing stage according to some embodiments of the present disclosure.
第3B圖為沿第3A圖的線段3B-3B’的剖面示意圖。 Fig. 3B is a schematic cross-sectional view taken along line 3B-3B 'of Fig. 3A.
第4圖為根據本揭露內容的第二實施方式繪示顯示面板的剖面示意圖。 FIG. 4 is a schematic cross-sectional view of a display panel according to a second embodiment of the present disclosure.
第5圖為根據本揭露內容的第三實施方式繪示顯示面板的剖面示意圖。 FIG. 5 is a schematic cross-sectional view of a display panel according to a third embodiment of the present disclosure.
第6圖為根據本揭露內容的第四實施方式繪示顯示面板的剖面示意圖。 FIG. 6 is a schematic cross-sectional view of a display panel according to a fourth embodiment of the present disclosure.
第7圖為根據本揭露內容的第五實施方式繪示顯示面板的剖面示意圖。 FIG. 7 is a schematic cross-sectional view of a display panel according to a fifth embodiment of the present disclosure.
以下將以圖式揭露本揭露內容之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併 說明。然而,應瞭解到,這些實務上的細節不應用以限制本揭露內容。也就是說,在本揭露內容部分實施方式中,這些實務上的細節為非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。在本文中,使用第一、第二與第三等等之詞彙,為用於辨別不同元件、區域、層,而非用以限制本揭露內容。 In the following, a number of implementations of this disclosure will be disclosed graphically. For the sake of clarity, many practical details will be combined in the following description. Instructions. However, it should be understood that these practical details should not be used to limit the disclosure. That is to say, in the embodiments of the disclosure, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner. In this article, the terms first, second, third, etc. are used to identify different components, regions, layers, and not to limit the disclosure.
在附圖中,為了清楚起見,放大了層、膜、面板、區域等的厚度。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時,不存在中間元件。如本文所使用的,「連接」可以指物理及/或電連接。 In the drawings, the thicknesses of layers, films, panels, regions, etc. are exaggerated for clarity. Throughout the description, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and / or electrical connection.
本文使用的「約」或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,「約」或「實質上」可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。 As used herein, "about" or "substantially" includes the stated value and an average value within an acceptable deviation range of a particular value determined by one of ordinary skill in the art, taking into account the measurement in question and measurement-related errors A specific number (ie, a limitation of the measurement system). For example, "about" or "substantially" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%.
應當理解,儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分,但是這些元件、部件、區域、及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或 部分與另一個元件、部件、區域、層或部分區分開。因此,下面討論的「第一元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。 It should be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, and / or sections, and / Or in part should not be limited by these terms. These terms are only used to refer to an element, part, region, layer, or A section is distinguished from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer," or "portion" discussed below may be termed a second element, component, region, layer, or portion without departing from the teachings herein.
本揭露內容的顯示面板可於製作過程中將部分層體移除,從而利於用以黏合基板的膠體層可形成在更靠近顯示區的位置,以使製作完成的顯示面板可適於應用為窄邊框結構。 The display panel disclosed in this disclosure can remove part of the layer during the manufacturing process, so that the colloid layer used to bond the substrate can be formed closer to the display area, so that the finished display panel can be suitable for narrow applications. Border structure.
請看到第1A圖及第1B圖,第1A圖為根據本揭露內容的第一實施方式繪示顯示面板100A的製作方法於製作階段中的上視示意圖,而第1B圖為沿第1A圖的線段1B-1B’的剖面示意圖。顯示面板100A具有顯示區102及圍繞顯示區102之周邊區104,為了不使圖式過於複雜,第1A圖的顯示區102未使用網底繪示。顯示面板100A包括第一基板110,其中第一基板110可以是透光基板,例如像是玻璃基板。於第1A圖及第1B圖所繪的製作階段中,顯示面板100A的第一基板110上形成有第一介電層112、平坦層114、第二介電層116、第三介電層118、導電層120、顯示元件130及第四介電層140。 Please see FIG. 1A and FIG. 1B. FIG. 1A is a schematic top view of the manufacturing method of the display panel 100A according to the first embodiment of the present disclosure during the manufacturing stage, and FIG. 1B is a view along FIG. 1A. A schematic sectional view of the line segments 1B-1B '. The display panel 100A has a display area 102 and a peripheral area 104 surrounding the display area 102. In order not to make the drawing too complicated, the display area 102 in FIG. The display panel 100A includes a first substrate 110. The first substrate 110 may be a light-transmitting substrate, such as a glass substrate. In the manufacturing stages depicted in FIGS. 1A and 1B, a first dielectric layer 112, a flat layer 114, a second dielectric layer 116, and a third dielectric layer 118 are formed on the first substrate 110 of the display panel 100A. , A conductive layer 120, a display element 130, and a fourth dielectric layer 140.
第一介電層112形成在第一基板110上,而平坦層114形成在第一介電層112上,且所形成的第一介電層112及平坦層114至少可位在顯示區102內。第一介電層112可為單層結構或是複合層結構,其包含有機或無機材料,像是聚亞醯胺、氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述材料的組合。平坦層114可為單層結構或是複合層結構,其包含有機 材料,像是聚亞醯胺。 The first dielectric layer 112 is formed on the first substrate 110, and the flat layer 114 is formed on the first dielectric layer 112. The formed first dielectric layer 112 and the flat layer 114 can be located at least in the display area 102. . The first dielectric layer 112 may be a single-layer structure or a composite layer structure, which includes organic or inorganic materials, such as polyimide, silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or the foregoing materials. The combination. The flat layer 114 may be a single-layer structure or a composite layer structure, and includes an organic layer Material, like polyurethane.
第二介電層116、第三介電層118及導電層120形成在平坦層114之上,其中第二介電層116位在平坦層114與第三介電層118之間,且第二介電層116可延伸至覆蓋在第一介電層112及平坦層114的側壁上以及第一基板110上。第二介電層116及第三介電層118可共同用以定義出顯示面板100A的畫素區域的位置,舉例來說,第二介電層116及第三介電層118可用來定義設置於顯示面板100A內部的顯示元件130的邊界位置。此外,第二介電層116及第三介電層118可共同具有接觸洞TH,從而利於配置顯示面板100A內部線路的佈局,例如導電層120可形成在接觸洞TH內,並用來做為顯示面板100A的內部線路使用。第二介電層116及第三介電層118可包含有機或無機材料,像是聚亞醯胺、氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述材料的組合。 The second dielectric layer 116, the third dielectric layer 118, and the conductive layer 120 are formed on the flat layer 114. The second dielectric layer 116 is located between the flat layer 114 and the third dielectric layer 118. The dielectric layer 116 may extend to cover the sidewalls of the first dielectric layer 112 and the flat layer 114 and the first substrate 110. The second dielectric layer 116 and the third dielectric layer 118 can be used together to define the position of the pixel area of the display panel 100A. For example, the second dielectric layer 116 and the third dielectric layer 118 can be used to define settings The boundary position of the display element 130 inside the display panel 100A. In addition, the second dielectric layer 116 and the third dielectric layer 118 may have a contact hole TH in common, thereby facilitating the layout of the internal circuit of the display panel 100A. For example, the conductive layer 120 may be formed in the contact hole TH and used as a display. The internal circuit of the panel 100A is used. The second dielectric layer 116 and the third dielectric layer 118 may include organic or inorganic materials, such as polyimide, silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination of the foregoing materials.
顯示元件130形成在平坦層114上,且所形成的顯示元件130係至少配置在顯示面板100A的顯示區102內。顯示元件130可以是發光二極體,像是有機發光二極體,並包含第一電極層132、發光層134及第二電極層136。發光層134可包含具電致發光性質的有機材料。於部分實施方式中,發光層134可為複合層結構,例如發光層134可更包含疊置的電子傳輸層、電子注入層、電子阻擋層、電洞傳輸層、電洞注入層或電洞阻擋層。第一電極層132與第二電極層136的材料可相異,例如第一電極層132可為非透明導電材料,像是金屬、合金、或其它合適的材料,而第二電極層136可為透明導電材 料,像是氧化銦錫、氧化銦鋅、氧化鋅、奈米碳管、氧化銦鎵鋅、或其它合適的材料。於部分實施方式中,第一電極層132與導電層120可以是透過圖案化同一金屬層形成,且於圖案化後係為彼此分離(即電性隔離)。於部分實施方式中,第一電極層132與導電層120的形成次序可早於第二介電層116的形成次序,而發光層134的形成次序可晚於第二介電層116的形成次序。 The display element 130 is formed on the flat layer 114, and the formed display element 130 is disposed at least in the display area 102 of the display panel 100A. The display element 130 may be a light emitting diode, such as an organic light emitting diode, and includes a first electrode layer 132, a light emitting layer 134, and a second electrode layer 136. The light emitting layer 134 may include an organic material having electroluminescent properties. In some embodiments, the light-emitting layer 134 may have a composite layer structure. For example, the light-emitting layer 134 may further include a stacked electron transport layer, an electron injection layer, an electron blocking layer, a hole transport layer, a hole injection layer, or a hole block. Floor. The materials of the first electrode layer 132 and the second electrode layer 136 may be different. For example, the first electrode layer 132 may be a non-transparent conductive material, such as a metal, an alloy, or other suitable materials, and the second electrode layer 136 may be Transparent conductive material Materials, such as indium tin oxide, indium zinc oxide, zinc oxide, carbon nanotubes, indium gallium zinc oxide, or other suitable materials. In some embodiments, the first electrode layer 132 and the conductive layer 120 may be formed by patterning the same metal layer and separated from each other (ie, electrically isolated) after patterning. In some embodiments, the formation order of the first electrode layer 132 and the conductive layer 120 may be earlier than the formation order of the second dielectric layer 116, and the formation order of the light emitting layer 134 may be later than the formation order of the second dielectric layer 116. .
第一電極層132位在平坦層114與發光層134之間,而第二電極層136覆蓋在發光層134上,且第二電極層136可延伸至接觸洞TH內並與導電層120連接。此外,於部分實施方式終,於顯示面板100A的顯示區102內,可在第一基板110上形成多個薄膜電晶體(未繪示),其中顯示元件130的第一電極層132可電性連接至薄膜電晶體,而導電層120則可與電壓供給端(未繪示)連接,因此,當驅動薄膜電晶體後,第一電極層132及第二電極層136可提供其之間的發光層134偏壓,以使發光層134藉由電致發光現象發出光線。然而,本揭露內容不以此為限,於其他實施方式中,可省略薄膜電晶體並改用驅動電路來控制顯示元件130的發光與否,像是可將第一電極層132及導電層120連接至驅動電路。 The first electrode layer 132 is located between the flat layer 114 and the light emitting layer 134, and the second electrode layer 136 covers the light emitting layer 134, and the second electrode layer 136 may extend into the contact hole TH and be connected to the conductive layer 120. In addition, at the end of some embodiments, a plurality of thin film transistors (not shown) may be formed on the first substrate 110 in the display area 102 of the display panel 100A. The first electrode layer 132 of the display element 130 may be electrically conductive. The thin film transistor is connected, and the conductive layer 120 can be connected to a voltage supply terminal (not shown). Therefore, after the thin film transistor is driven, the first electrode layer 132 and the second electrode layer 136 can provide light emission therebetween. The layer 134 is biased so that the light-emitting layer 134 emits light through an electroluminescence phenomenon. However, the disclosure is not limited to this. In other embodiments, the thin film transistor can be omitted and the driving circuit can be used to control the light emission of the display element 130. For example, the first electrode layer 132 and the conductive layer 120 can be changed. Connected to the drive circuit.
第四介電層140形成在平坦層114之上,且第四介電層140係形成在顯示面板100A的顯示區102與周邊區104內,並覆蓋第二介電層116、第三介電層118及顯示元件130。第四介電層140可做為鈍化層使用,以防止位在其與第一基板110之間的層體或元件受到外界影響而受損。第四介電層140 可包含有機或無機材料,像是聚亞醯胺、氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述材料的組合。第四介電層140可透過沉積形成,例如可透過化學氣相沉積(chemical vapor deposition;CVD)形成。 The fourth dielectric layer 140 is formed on the flat layer 114, and the fourth dielectric layer 140 is formed in the display region 102 and the peripheral region 104 of the display panel 100A, and covers the second dielectric layer 116 and the third dielectric layer. Layer 118 and display element 130. The fourth dielectric layer 140 can be used as a passivation layer to prevent the layer body or element located between the fourth dielectric layer 140 and the first substrate 110 from being damaged by external influences. Fourth dielectric layer 140 It may include organic or inorganic materials, such as polyimide, silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination of the above. The fourth dielectric layer 140 can be formed by deposition, for example, can be formed by chemical vapor deposition (CVD).
在第四介電層140是透過沉積形成的情況下,周邊區104內的第四介電層140之厚度會沿著遠離顯示區102之方向漸減。為了方便說明,係繪示虛線來區隔第四介電層140的厚度漸減部分140A與其他部分140B。厚度漸減之第四介電層140會覆蓋在部分的第二介電層116上。於部分實施方式中,厚度漸減之第四介電層140的分布寬度W1約介於650μm至750μm之間,像是700μm,且其與第三介電層118之間的距離L1約介於150μm至250μm之間,像是200μm。 In the case where the fourth dielectric layer 140 is formed through deposition, the thickness of the fourth dielectric layer 140 in the peripheral region 104 will gradually decrease in a direction away from the display region 102. For the convenience of explanation, a dotted line is drawn to separate the thickness-reduced portion 140A of the fourth dielectric layer 140 from other portions 140B. The fourth dielectric layer 140 having a decreasing thickness covers a portion of the second dielectric layer 116. In some embodiments, the decreasing width W1 of the fourth dielectric layer 140 is approximately 650 μm to 750 μm, such as 700 μm, and the distance L1 between the fourth dielectric layer 140 and the third dielectric layer 118 is approximately 150 μm. Between 250 μm, it looks like 200 μm.
請再看到第2A圖,第2A圖為根據本揭露內容的第一實施方式繪示顯示面板100A的製作方法於製作階段中的剖面示意圖,其中第2A圖的剖面位置與第1B圖相同,且第2A圖所繪的製作階段為接續在第1A圖及第1B圖的製作階段之後。 Please see FIG. 2A again. FIG. 2A is a schematic cross-sectional view of the manufacturing method of the display panel 100A according to the first embodiment of the present disclosure during the manufacturing stage. The cross-sectional position of FIG. 2A is the same as that of FIG. 1B. In addition, the manufacturing stage depicted in Figure 2A is subsequent to the manufacturing stages of Figures 1A and 1B.
於第2A圖所繪的製作階段中,可移除周邊區104內的厚度漸減之第四介電層140,其中移除厚度漸減之第四介電層140的過程係為非等向性的。舉例來說,於部分實施方式中,可透過發射雷射光束至周邊區104內的厚度漸減之第四介電層140,以將其自第一基板110上移除。雷射光束的波長可以是落在紫外光區間,像是使用波長約365奈米的雷射光束,或者也可以是落在紅外光區間,像是使用波長約1064奈米的 雷射光束。於其他實施方式中,也可以使用光罩製程,從而透過非等向性蝕刻來實現移除厚度漸減之第四介電層140。此外,於移除厚度漸減之第四介電層140的過程中,也可連帶將由厚度漸減之第四介電層140覆蓋的第二介電層116自第一基板110上移除。 In the manufacturing stage depicted in FIG. 2A, the fourth dielectric layer 140 having a decreasing thickness in the peripheral region 104 can be removed. The process of removing the fourth dielectric layer 140 having a decreasing thickness is anisotropic. . For example, in some embodiments, the fourth dielectric layer 140 having a decreasing thickness in the peripheral region 104 may be transmitted by emitting a laser beam to remove it from the first substrate 110. The wavelength of the laser beam can fall in the ultraviolet range, such as using a laser beam with a wavelength of about 365 nanometers, or it can fall in the infrared range, such as using a wavelength of about 1064 nanometers. Laser beam. In other embodiments, a photomask process may also be used, so that the fourth dielectric layer 140 having a decreasing thickness can be removed through anisotropic etching. In addition, during the process of removing the fourth dielectric layer 140 having a decreasing thickness, the second dielectric layer 116 covered by the fourth dielectric layer 140 having a decreasing thickness may be removed from the first substrate 110 in conjunction with the fourth dielectric layer 140.
為了方便說明,係在第一基板110上標記第一區域A1、第二區域A2以及第三區域A3,其中第一區域A1為於移除過程後之第一基板110仍由第一介電層112及第二介電層116覆蓋的區域,第二區域A2為因進行移除過程所導致第一基板110暴露出來的區域,而第三區域A3為於移除過程前之第一基板110未被第一介電層112、第二介電層116及第四介電層140覆蓋的區域,其中第二區域A2及第三區域A3位在周邊區104內並相對第一區域A1遠離顯示區102,且第二區域A2位在第一區域A1與第三區域A3之間。 For the convenience of explanation, the first region A1, the second region A2, and the third region A3 are marked on the first substrate 110. The first region A1 is that the first substrate 110 is still covered by the first dielectric layer after the removal process. The area covered by 112 and the second dielectric layer 116, the second area A2 is the area where the first substrate 110 is exposed due to the removal process, and the third area A3 is the first substrate 110 before the removal process. An area covered by the first dielectric layer 112, the second dielectric layer 116, and the fourth dielectric layer 140, wherein the second area A2 and the third area A3 are located in the peripheral area 104 and are far from the display area relative to the first area A1 102, and the second area A2 is located between the first area A1 and the third area A3.
於移除過程後,厚度漸減之第四介電層140以及由其覆蓋的第二介電層116可暴露出第一基板110的第二區域A2,而剩餘之第二介電層116則仍位在第一基板110上並至少覆蓋在第一區域A1之上。具體來說,第二介電層116與第一基板110之間的交界面邊界會切齊第一區域A1與第二區域A2之間的交界線。 After the removal process, the fourth dielectric layer 140 of decreasing thickness and the second dielectric layer 116 covered by it may expose the second region A2 of the first substrate 110, while the remaining second dielectric layer 116 remains. It is located on the first substrate 110 and covers at least the first area A1. Specifically, the interface boundary between the second dielectric layer 116 and the first substrate 110 is aligned with the boundary line between the first region A1 and the second region A2.
由於所移除之第四介電層140係為厚度漸減,故於移除過程,第一基板110的第二區域A2會是沿著遠離顯示區102之方向漸被暴露出來。也就是說,於移除過程中,在厚度漸減之第四介電層140尚未移除完全之前,即使第一基板110 的第二區域A2已有一部份先暴露出來,移除過程仍會繼續進行。換言之,於移除過程中,所使用的移除手段(像是使用雷射光束)除了會移除第四介電層140之外,尚會照射到第一基板110的第二區域A2,並使第一基板110的第二區域A2產生變化。例如,當雷射光束照射到第一基板110的第二區域A2時,雷射光束會些微破壞第一基板110的第二區域A2的表面,並致使第一基板110的第二區域A2的表面粗糙度增加。於部分實施方式中,於移除過程結束後,第一基板110於第二區域A2的表面粗糙度約為R微米,且0<R≦1。 Since the removed fourth dielectric layer 140 has a decreasing thickness, during the removal process, the second area A2 of the first substrate 110 will be gradually exposed in a direction away from the display area 102. That is, during the removal process, before the fourth dielectric layer 140 having a decreasing thickness is completely removed, even the first substrate 110 A part of the second area A2 has been exposed first, and the removal process will continue. In other words, during the removal process, the removal method (such as using a laser beam) will not only remove the fourth dielectric layer 140, but also irradiate the second area A2 of the first substrate 110, and The second region A2 of the first substrate 110 is changed. For example, when the laser beam irradiates the second region A2 of the first substrate 110, the laser beam may slightly damage the surface of the second region A2 of the first substrate 110 and cause the surface of the second region A2 of the first substrate 110 Roughness increases. In some embodiments, after the removal process is finished, the surface roughness of the first substrate 110 in the second region A2 is about R microns, and 0 <R ≦ 1.
另一方面,於移除過程中,由於第一基板110於第一區域A1的表面係由至少一層的介電層覆蓋住,故第一基板110於第一區域A1的表面粗糙度不會產生如第二區域A2的變化,因此第一基板110於第二區域A2的表面粗糙度會大於第一基板110於第一區域A1的表面粗糙度。此外,於移除過程中,可使用遮罩遮蔽射向第一基板110的第三區域A3之雷射光束,使得第一基板110於第三區域A3的表面粗糙度不會產生如第二區域A2的變化,致使第一基板110於第二區域A2的表面粗糙度大於第一基板110於第三區域A3的表面粗糙度。而由於第一基板110的第二區域A2會是沿著遠離顯示區102之方向漸被暴露出來,故第一基板110的第二區域A2在沿著遠離顯示區102之方向上的受光照時間也會是漸增的,此將使得第一基板110於第二區域A2的表面粗糙度會沿著遠離顯示區102之方向漸增,例如可見第2B圖,其為第2A圖的第一基板110的第二區域A2之一部分的放大示意圖。為了助於理解,加大了 第2圖所繪的起伏比例,此僅為用來示意及說明,而非為用來限制本揭露內容。如第2B圖所示,第一基板110於第二區域A2的表面粗糙度會沿著第2B圖之由右至左方向(即第2A圖之遠離顯示區102方向)漸增,或可稱起伏程度漸增。 On the other hand, during the removal process, since the surface of the first substrate 110 on the first region A1 is covered by at least one dielectric layer, the surface roughness of the first substrate 110 on the first region A1 does not occur. If the second region A2 changes, the surface roughness of the first substrate 110 in the second region A2 will be greater than the surface roughness of the first substrate 110 in the first region A1. In addition, during the removal process, a mask can be used to shield the laser beam directed to the third region A3 of the first substrate 110, so that the surface roughness of the first substrate 110 in the third region A3 does not generate as the second region The change in A2 causes the surface roughness of the first substrate 110 in the second region A2 to be greater than the surface roughness of the first substrate 110 in the third region A3. Since the second area A2 of the first substrate 110 is gradually exposed in a direction away from the display area 102, the light exposure time of the second area A2 of the first substrate 110 in a direction away from the display area 102 It will also increase gradually. This will make the surface roughness of the first substrate 110 in the second area A2 gradually increase in a direction away from the display area 102. For example, see FIG. 2B, which is the first substrate in FIG. 2A. An enlarged schematic view of a part of the second region A2 of 110. In order to help understanding, The undulation ratio depicted in FIG. 2 is only used for illustration and description, and is not intended to limit the disclosure. As shown in FIG. 2B, the surface roughness of the first substrate 110 in the second area A2 will gradually increase along the right-to-left direction of FIG. 2B (that is, the direction away from the display area 102 in FIG. 2A), or it may be called The degree of undulation is increasing.
請看到第3A圖及第3B圖,第3A圖為根據本揭露內容的部分實施方式繪示顯示面板100A的製作方法於製作階段中的上視示意圖,而第3B圖為沿第3A圖的線段3B-3B’的剖面示意圖,且第3A圖及第3B圖所繪的製作階段為接續在第2A圖的製作階段之後。 Please see FIG. 3A and FIG. 3B. FIG. 3A is a schematic top view illustrating the manufacturing method of the display panel 100A in the manufacturing stage according to some embodiments of the present disclosure, and FIG. 3B is a view along FIG. 3A. A schematic cross-sectional view of the line segments 3B-3B ′, and the production stages depicted in FIGS. 3A and 3B are subsequent to the production stage of FIG. 2A.
於第3A圖及第3B圖所繪的製作階段中,可在顯示面板100A的周邊區104形成膠體層150,其中膠體層150位在第一基板110上,並覆蓋第一基板110的第二區域A2及第三區域A3。在將部分的第四介電層140移除後,膠體層150可形成在更靠近顯示區102的位置。具體來說,若未將厚度漸減之第四介電層140移除,則膠體層150的形成位置將會被限制在第一基板110的第三區域A3內。對此,當將厚度漸減之第四介電層140移除後,膠體層150除可形成為覆蓋在第一基板110的第三區域A3上之外,尚可覆蓋在第一基板110的第二區域A2上,以更靠近顯示區102。而由於膠體層150可形成為更靠近顯示區102,故第一基板110的第三區域A3可設計為具有更小的寬度,以使顯示面板100A可適於應用為窄邊框結構。此外,若未將厚度漸減之第四介電層140移除,則所形成的膠體層150也可能因覆蓋在第四介電層140上而導致黏著性不佳的問題。 In the production stages depicted in FIGS. 3A and 3B, a colloid layer 150 may be formed in the peripheral region 104 of the display panel 100A, wherein the colloid layer 150 is located on the first substrate 110 and covers the second substrate 110. Region A2 and third region A3. After a portion of the fourth dielectric layer 140 is removed, the colloidal layer 150 may be formed closer to the display area 102. Specifically, if the fourth dielectric layer 140 having a decreasing thickness is not removed, the formation position of the colloidal layer 150 will be limited to the third region A3 of the first substrate 110. In this regard, when the fourth dielectric layer 140 having a decreasing thickness is removed, the colloidal layer 150 may be formed to cover the third region A3 of the first substrate 110, and may also cover the first substrate 110. The second area A2 is closer to the display area 102. Since the colloid layer 150 can be formed closer to the display area 102, the third area A3 of the first substrate 110 can be designed to have a smaller width, so that the display panel 100A can be suitably applied to a narrow frame structure. In addition, if the fourth dielectric layer 140 whose thickness is gradually reduced is not removed, the formed colloid layer 150 may also cause poor adhesion due to covering the fourth dielectric layer 140.
於部分實施方式中,於移除過程後,周邊區104內的尺寸配置可以是:未被膠體層150覆蓋之第三區域A3的寬度W2為約介於150μm至250μm之間,像是200μm;膠體層150的寬度W3為約介於1800μm至2200μm之間,像是2000μm;第四介電層140覆蓋在第二介電層116的寬度W4約介於150μm-2至0μm之間,像是200μm;由第四介電層140覆蓋之第三介電層118的寬度W5約介於150μm至250μm之間,像是200μm;接觸洞TH的寬度W6約介於700μm至900μm之間,像是800μm;由第二電極層136覆蓋之第三介電層118的寬度W7約介於400μm至600μm之間,像是500μm。周邊區104的寬度W8可以是介於約3300μm至4500μm之間,像是3900μm。 In some embodiments, after the removal process, the size configuration in the peripheral region 104 may be: the width W2 of the third region A3 not covered by the colloid layer 150 is between about 150 μm and 250 μm, such as 200 μm; The width W3 of the colloidal layer 150 is between about 1800 μm and 2200 μm, like 2000 μm; the width W4 of the fourth dielectric layer 140 covering the second dielectric layer 116 is between about 150 μm and 2 to 0 μm, like 200 μm; the width W5 of the third dielectric layer 118 covered by the fourth dielectric layer 140 is between 150 μm and 250 μm, like 200 μm; the width W6 of the contact hole TH is between 700 μm and 900 μm, like 800 μm; the width W7 of the third dielectric layer 118 covered by the second electrode layer 136 is between about 400 μm and 600 μm, such as 500 μm. The width W8 of the peripheral region 104 may be between about 3300 μm and 4500 μm, such as 3900 μm.
另一方面,由於第一基板110於第二區域A2的表面粗糙度會大於其他區域的表面粗糙度,故可視為第一基板110於第二區域A2的表面具有微結構111,且此微結構111係至少會由膠體層150覆蓋。透過微結構111,可增加膠體層150對第一基板110的接觸面積,以提升膠體層150對第一基板110的黏著能力。膠體層150可以是部分地覆蓋在第一基板110的第二區域A2上,即會有部分的第二區域A2是未由膠體層150覆蓋,且膠體層150可與剩餘之第四介電層140相隔一段距離,以防止因製程變異而致使不預期的結果。 On the other hand, since the surface roughness of the first substrate 110 in the second region A2 will be greater than the surface roughness of other regions, it can be considered that the surface of the first substrate 110 in the second region A2 has a microstructure 111, and this microstructure The 111 series is covered by at least the colloidal layer 150. Through the microstructure 111, the contact area of the colloidal layer 150 to the first substrate 110 can be increased, so as to improve the adhesion ability of the colloidal layer 150 to the first substrate 110. The colloidal layer 150 may be partially covered on the second region A2 of the first substrate 110, that is, there may be a portion of the second region A2 that is not covered by the colloidal layer 150, and the colloidal layer 150 and the remaining fourth dielectric layer may be 140 is separated by a distance to prevent unexpected results due to process variations.
第二基板160可組裝於第一基板110之上,即第一基板110及第二基板160為相對設置,使得膠體層150會是設置於第一基板110與第二基板160之間,並可用以將第二基板160固定在第一基板110之上。第二基板160可以是透光基板,例 如像是玻璃基板。除此之外,可於第一基板110與第二基板160之間填充介電材料162,以提升顯示面板100A的結構強度,並保護第一基板110與第二基板160之間的層體受到外界影響而受損。而由於膠體層150與剩餘之第四介電層140會相隔一段距離,故介電材料162也會填充於膠體層150與剩餘之第四介電層140之間,且介電材料162與膠體層150可共同覆蓋第二區域A2,以防止因移除厚度漸減之第四介電層140所暴露出來的第二區域A2受到不預期的破壞。 The second substrate 160 can be assembled on the first substrate 110, that is, the first substrate 110 and the second substrate 160 are oppositely disposed, so that the colloid layer 150 is disposed between the first substrate 110 and the second substrate 160, and can be used. The second substrate 160 is fixed on the first substrate 110. The second substrate 160 may be a transparent substrate, for example Such as a glass substrate. In addition, a dielectric material 162 may be filled between the first substrate 110 and the second substrate 160 to improve the structural strength of the display panel 100A and protect the layer body between the first substrate 110 and the second substrate 160 from being damaged. Damaged by external influences. And since the colloidal layer 150 is separated from the remaining fourth dielectric layer 140, the dielectric material 162 is also filled between the colloidal layer 150 and the remaining fourth dielectric layer 140, and the dielectric material 162 and the colloid The layer 150 may collectively cover the second area A2 to prevent the second area A2 exposed by the fourth dielectric layer 140 having a decreasing thickness from being damaged unexpectedly.
上述所進行之將厚度漸減之第四介電層140移除的過程可應用在顯示面板100A的周邊區104之至少一個側邊上。於部分實施方式中,將厚度漸減之第四介電層140移除的過程可應用在顯示面板100A的周邊區104之相對的一對側邊上,以使顯示面板100A的一對相對的邊框可適於設計為窄邊框。於其他實施方式中,將厚度漸減之第四介電層140移除的過程可應用在顯示面板100A的周邊區104之三個側邊上,以使顯示面板100A的三個邊框可適於設計為窄邊框,而未應用之剩餘單一邊框可用來配置驅動元件或是其他電性元件。 The above-mentioned process of removing the fourth dielectric layer 140 with decreasing thickness may be applied to at least one side of the peripheral region 104 of the display panel 100A. In some embodiments, the process of removing the fourth dielectric layer 140 having a decreasing thickness may be applied to a pair of opposite sides of the peripheral region 104 of the display panel 100A, so that a pair of opposite frames of the display panel 100A Can be adapted to be designed as a narrow bezel. In other embodiments, the process of removing the fourth dielectric layer 140 with decreasing thickness may be applied to three sides of the peripheral region 104 of the display panel 100A, so that the three frames of the display panel 100A may be suitable for design. It is a narrow frame, and the remaining single frame that is not applied can be used to configure driving elements or other electrical components.
請參照第4圖,第4圖為根據本揭露內容的第二實施方式繪示顯示面板100B的剖面示意圖,其中第4圖的剖面位置與第1B圖相同。本實施方式與第一實施方式的至少一個差異點在於,本實施方式的膠體層150接觸第二介電層116以及第四介電層140,其中第二介電層116與膠體層150的交界面於第一基板110的垂直投影會切齊第一區域A1與第二區域A2之間的交界線,且第四介電層140與膠體層150的交界面於第一 基板110的垂直投影也會切齊第一區域A1與第二區域A2之間的交界線。此外,第一基板110的第二區域A2可完全由膠體層150覆蓋,從而透過第一基板110於第二區域A2的表面所形成之微結構111提升膠體層150對第一基板110的黏著能力。由於可透過微結構111提升黏著能力,故可調整並減少膠體層150的覆蓋面積,以進一步實現窄化顯示面板100B的邊框。 Please refer to FIG. 4, which is a schematic cross-sectional view of a display panel 100B according to a second embodiment of the present disclosure. The cross-sectional position of FIG. 4 is the same as that of FIG. 1B. At least one difference between this embodiment and the first embodiment is that the colloidal layer 150 of this embodiment contacts the second dielectric layer 116 and the fourth dielectric layer 140, and the intersection of the second dielectric layer 116 and the colloidal layer 150 The vertical projection of the interface on the first substrate 110 will cut the boundary line between the first area A1 and the second area A2, and the interface between the fourth dielectric layer 140 and the colloidal layer 150 will be at the first The vertical projection of the substrate 110 will also cut the boundary between the first area A1 and the second area A2. In addition, the second region A2 of the first substrate 110 may be completely covered by the colloidal layer 150, so that the microstructure 111 formed on the surface of the second region A2 by the first substrate 110 improves the adhesive ability of the colloidal layer 150 to the first substrate 110. . Since the adhesion ability can be improved through the microstructure 111, the coverage area of the colloid layer 150 can be adjusted and reduced to further narrow the frame of the display panel 100B.
第5圖為根據本揭露內容的第三實施方式繪示顯示面板100C的剖面示意圖,其中第5圖的剖面位置與第1B圖相同。本實施方式與第一實施方式的至少一個差異點在於,本實施方式的膠體層150未覆蓋至第三區域A3,即膠體層150於第一基板110的垂直投影係落在第二區域A2內。由於膠體層150可透過微結構111提升對第一基板110的黏著能力,故在黏著能力允許的情況下,可適應性地調整膠體層150的覆蓋位置,以防止因製程變異而致使不預期的結果。 FIG. 5 is a schematic cross-sectional view of a display panel 100C according to a third embodiment of the present disclosure. The cross-sectional position of FIG. 5 is the same as that of FIG. 1B. At least one difference between this embodiment and the first embodiment is that the colloid layer 150 of this embodiment does not cover the third area A3, that is, the vertical projection of the colloid layer 150 on the first substrate 110 falls within the second area A2. . Since the colloidal layer 150 can improve the adhesion ability to the first substrate 110 through the microstructure 111, the covering position of the colloidal layer 150 can be adaptively adjusted when the adhesion ability permits, so as to prevent unexpected results due to process variations. result.
第6圖為根據本揭露內容的第四實施方式繪示顯示面板100D的剖面示意圖,其中第6圖的剖面位置與第1B圖相同。本實施方式與第一實施方式的至少一個差異點在於,本實施方式的膠體層150接觸第二介電層116以及第四介電層140,且膠體層150於第一基板110的垂直投影係與第二區域A2重合。更進一步來說,即膠體層150於第一基板110的垂直投影邊界會與微結構111的分布區域的邊界重合。由於膠體層150可透過微結構111提升對第一基板110的黏著能力,故在黏著能力允許的情況下,可適應性地調整膠體層150的覆蓋位置,以使顯示面板100D可適於不同的製作需求。 FIG. 6 is a schematic cross-sectional view of a display panel 100D according to a fourth embodiment of the present disclosure. The cross-sectional position of FIG. 6 is the same as that of FIG. 1B. At least one difference between this embodiment and the first embodiment is that the colloidal layer 150 of this embodiment contacts the second dielectric layer 116 and the fourth dielectric layer 140, and the colloidal layer 150 is perpendicular to the projection system of the first substrate 110. It coincides with the second area A2. Furthermore, the vertical projection boundary of the colloidal layer 150 on the first substrate 110 coincides with the boundary of the distribution area of the microstructure 111. Since the colloidal layer 150 can improve the adhesion ability to the first substrate 110 through the microstructure 111, the covering position of the colloidal layer 150 can be adjusted adaptively when the adhesion ability allows, so that the display panel 100D can be adapted to different Production requirements.
第7圖為根據本揭露內容的第五實施方式繪示顯示面板100E的剖面示意圖,其中第7圖的剖面位置與第1B圖相同。本實施方式與第一實施方式的至少一個差異點在於,本實施方式的顯示元件130的發光層134可以透過噴墨列印(ink-jet printing;IJP)製程形成在第一電極層132上。透過噴墨列印所形成的發光層134會具有漸變之厚度,例如發光層134邊緣處的厚度T1會大於發光層134中間區域的厚度T2,且發光層134之邊緣處至中間區域的厚度會是漸變薄的。而形成在發光層134上的第二電極層136可以是透過蒸鍍形成,並具有對於發光層134係相對均勻的厚度,例如第二電極層136對應發光層134邊緣處的厚度T3會實質上等於對應發光層134中間區域的厚度T4。 FIG. 7 is a schematic cross-sectional view of a display panel 100E according to a fifth embodiment of the present disclosure. The cross-sectional position of FIG. 7 is the same as that of FIG. 1B. At least one difference between this embodiment and the first embodiment is that the light-emitting layer 134 of the display element 130 of this embodiment can be formed on the first electrode layer 132 through an ink-jet printing (IJP) process. The light-emitting layer 134 formed by inkjet printing will have a gradual thickness. For example, the thickness T1 at the edges of the light-emitting layer 134 will be greater than the thickness T2 of the middle region of the light-emitting layer 134, and the thickness from the edge of the light-emitting layer 134 to the middle region will be It's thinner. The second electrode layer 136 formed on the light emitting layer 134 may be formed by evaporation and has a relatively uniform thickness for the light emitting layer 134. For example, the thickness T3 of the second electrode layer 136 corresponding to the edge of the light emitting layer 134 will be substantially It is equal to the thickness T4 of the middle region of the corresponding light emitting layer 134.
綜上所述,本揭露內容的顯示面板在製作階段時,可將周邊區內之多餘的介電層自第一基板上移除,使得後續所形成之膠體層可更靠近顯示區,以使顯示面板可適於應用為窄邊框結構。另一方面,在將多餘的介電層移除的過程中,第一基板會因移除手段而增加粗糙度並可視為具有微結構。當所形成之膠體層是覆蓋在微結構上的時候,可增加膠體層對第一基板的接觸面積,以提升膠體層對第一基板的黏著能力。此外,於顯示面板的製作階段中,可適應性地調整膠體層的覆蓋位置,以使顯示面板可適於不同的製作需求。 In summary, during the manufacturing stage of the display panel of the present disclosure, the excess dielectric layer in the peripheral region can be removed from the first substrate, so that the colloidal layer formed later can be closer to the display area, so that The display panel may be suitably applied as a narrow bezel structure. On the other hand, during the process of removing the excess dielectric layer, the first substrate may increase the roughness due to the removal method and may be regarded as having a microstructure. When the formed colloid layer is covered on the microstructure, the contact area of the colloid layer to the first substrate can be increased, so as to improve the adhesive ability of the colloid layer to the first substrate. In addition, in the manufacturing stage of the display panel, the covering position of the colloid layer can be adaptively adjusted so that the display panel can be adapted to different manufacturing needs.
雖然本揭露內容已以多種實施方式揭露如上,然其並非用以限定本揭露內容,任何熟習此技藝者,在不脫離本揭露內容之精神和範圍內,當可作各種之更動與潤飾,因此本 揭露內容之保護範圍當視後附之申請專利範圍所界定者為準。 Although the content of this disclosure has been disclosed above in various ways, it is not intended to limit the content of this disclosure. Any person skilled in this art can make various changes and decorations without departing from the spirit and scope of this disclosure. this The scope of protection of the disclosure shall be determined by the scope of the attached patent application.
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