TWI675472B - Organic light emitting device and fabricating method thereof - Google Patents

Abstract

An organic light-emitting device includes a light-emitting area and a non-light-emitting area, and includes a substrate, a first electrode, a second electrode, and a plurality of organic light-emitting structures. The first electrode is disposed on the light emitting area. The second electrode is located on the first electrode, and the second electrode is disposed in the light emitting region and the non-light emitting region corresponding to the first electrode. These organic light emitting structures are located between the first electrode and the second electrode. Each organic light emitting structure includes a hole transporting layer and a light emitting layer. The light emitting layer covers the hole transporting layer. A method for manufacturing an organic light emitting device is also mentioned.

Description

Organic light emitting device and manufacturing method thereof

The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to an organic light emitting device and a method for manufacturing the same.

With the advancement of science and technology, flat panel displays are the most noticeable display technology in recent years. Among them, organic light emitting diodes (OLEDs) are self-emitting, have no viewing angle dependence, save power, have simple manufacturing processes, low cost, Low temperature operating range and high response speed have great application potential, and it is expected to become the mainstream of next-generation flat panel displays.

At present, the full-color technology commonly used in OLED display panels includes red, green and blue (RGB) pixel side by side technology. The above-mentioned RGB pixel juxtaposition technology is composed of light emitted by three pixels of red, green and blue respectively, and can obtain better color saturation and power saving. However, the conventional RGB pixels have the phenomenon of co-brightness, and at low brightness, it is easy to have obvious color shift. Specifically, when a single color pixel is lit and measured, it is found that as the brightness of the single color pixel decreases, the color shift caused by the co-brightness of other color pixels will become more serious. Therefore, how to reduce the phenomenon of co-brightness and reduce the color shift of pixels at low brightness is really one of the problems that researchers currently want to solve.

The invention provides an organic light-emitting device, which can reduce the co-brightness phenomenon, improve the problem of color shift, and has good display quality.

The invention further provides a method for manufacturing an organic light emitting device, which has good display quality.

The organic light-emitting device of the present invention has a light-emitting area and a non-light-emitting area, and includes a substrate, a first electrode, a second electrode, and a plurality of organic light-emitting structures. The first electrode is disposed on the light emitting area. The second electrode is located on the first electrode, and the second electrode is disposed in the light emitting region and the non-light emitting region corresponding to the first electrode. These organic light emitting structures are located between the first electrode and the second electrode. Each organic light emitting structure includes a hole transporting layer and a light emitting layer. The light emitting layer covers the hole transporting layer.

In an embodiment of the present invention, the above-mentioned organic light emitting structures include an adjacent first organic light emitting structure and a second organic light emitting structure. The first organic light emitting structure includes a first hole transporting layer and a first light emitting layer covering the first hole transporting layer. The second organic light emitting structure includes a second hole transporting layer and a second light emitting layer covering one of the second hole transporting layers. The first light emitting layer has a first peripheral portion, and the first peripheral portion is partially located between the first hole transmission layer and the second hole transmission layer to separate the first hole transmission layer from the second hole transmission layer. open.

According to an embodiment of the present invention, a third light emitting layer is further included, covering the first organic light emitting structure and the second organic light emitting structure.

In an embodiment of the invention, a third light emitting structure is further included, which is adjacent to the second light emitting structure. The third organic light emitting structure includes a third hole transporting layer and a third light emitting layer covering one of the third hole transporting layers. The second light emitting layer has a second peripheral portion, and the second peripheral portion is partially located between the second hole transmission layer and the third hole transmission layer to separate the second hole transmission layer from the third hole transmission layer. open.

In an embodiment of the present invention, it further includes an electron transport layer or an electron injection layer, which is located between the organic light emitting structures and the second electrode.

In an embodiment of the present invention, the orthographic projection of the light-emitting layer on the substrate is larger than the orthographic projection of the corresponding hole transmission layer on the substrate.

In an embodiment of the present invention, it further includes at least one common hole injection layer located between the first electrode and the organic light emitting structures.

In an embodiment of the present invention, the above-mentioned organic light emitting device includes at least two stacks stacked one above the other. The two stacks are located between the first electrode and the second electrode. Each stack includes these organic light emitting structures.

The method for manufacturing an organic light emitting device of the present invention includes the following steps. A first electrode is formed on a substrate. A first hole transport layer is formed on the first electrode. A first light emitting layer is formed on the first hole transport layer, and the first light emitting layer covers the first hole transport layer. A second hole transport layer is formed, and an edge of the second hole transport layer is stacked on an edge of the first light emitting layer. A second light-emitting layer is formed, an edge of the second light-emitting layer is stacked on an edge of the first light-emitting layer, and the second light-emitting layer covers the second hole-transporting layer. And forming a second electrode.

In an embodiment of the present invention, the orthographic projections of the first and second light emitting layers on the substrate are larger than the orthographic projections of the first and second hole transmission layers on the substrate, respectively.

In an embodiment of the invention, the first light-emitting layer includes a first peripheral portion. The first peripheral portion isolates the first hole transmission layer and the second hole transmission layer so that the first hole transmission layer and the second hole transmission layer are not in contact with each other.

Based on the above, the organic light emitting device of the present invention includes a plurality of organic light emitting structures, each organic light emitting structure includes a hole transport layer and a light emitting layer, and the light emitting layer covers the hole transport layer. When the manufacturing method of the organic light emitting device of the present invention is to sequentially complete a plurality of organic light emitting structures on the first electrode, a hole transporting layer of one of the organic light emitting structures is formed first, and then a light emitting layer is formed to cover the hole transporting layer To complete one of the organic light emitting structures. Therefore, the hole transporting layers of the adjacent organic light emitting structures formed subsequently will be separated by the light emitting layer. In this configuration, the lateral resistance between the hole transport layers of multiple adjacent organic light emitting structures can be increased, reducing the generation of side currents, and reducing the phenomenon of co-brightness between pixels to improve the pixel sharing. The problem of color shift caused by light, thereby improving the display quality of the organic light emitting device.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

In the drawings, the thicknesses of layers, films, panels, regions, etc. are exaggerated for clarity. Throughout the description, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" or "coupled" may refer to a physical and / or electrical connection. Furthermore, "electrically connected" or "coupled / connected" may mean that there are other components between the two components.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the related art and the present invention, and will not be interpreted as idealized or excessive Formal meaning unless explicitly defined as such in this article.

The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one", unless the content clearly indicates otherwise.

Exemplary embodiments are described herein with reference to cross-sectional views that are schematic views of idealized embodiments. Accordingly, variations in the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Therefore, the embodiments described herein should not be construed as limited to the particular shape of the area as shown herein, but include shape deviations caused by, for example, manufacturing. For example, a region shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, the acute angles shown may be round. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

1A to 1K are schematic cross-sectional views of a method for manufacturing an organic light-emitting device according to an embodiment of the present invention. Referring to FIG. 1A, first, a substrate 100 is provided, which has at least one light emitting region 102 and at least one non-light emitting region 104. In this embodiment, a first electrode 110 is formed on the substrate 100, and the first electrode 110 is disposed on at least one light emitting region 102. It should be noted here that FIG. 1A to FIG. 1K are enlarged and illustrated for the sake of clarity of the drawings. In fact, the thickness of the first electrode 110, the thickness of other components, and the thickness of the substrate 100 will not be similar to those shown in FIG. 1A. In addition, FIG. 1A to FIG. 1K are not used to limit the size relationship between different components, but are only used for illustration.

As shown in FIG. 1A, the light emitting region 102 is an area defined by an area of the orthographic projection of the first electrode 110 on the substrate 100. The non-light emitting region 104 is a region defined by an area other than the orthographic projection of the first electrode 110 on the substrate 100. The light emitting area 102 and the non-light emitting area are side-by-side and interlace. For example, as shown in FIG. 1A, there is a non-light-emitting area 104 between two adjacent light-emitting areas 102, and the two light-emitting areas 102 are not close to each other, and the two non-light-emitting areas 104 are not close to each other. The material of the substrate 100 may be glass, quartz, organic polymer, plastic, flexible plastic, or opaque / reflective material (such as conductive materials, metals, wafers, ceramics, or other applicable materials) or other materials. Applicable materials, but the invention is not limited thereto. If a conductive material or metal is used, an insulating layer (not shown) is covered on the substrate 100 to avoid short circuit problems. In some embodiments, the substrate 100 may further include an active device array (not shown), wherein the above active device array includes a plurality of transistors (not shown), which are electrically connected to the corresponding first electrodes 110 respectively. .

In this embodiment, the method for forming the first electrode 110 is, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), evaporation (VTE), sputtering (SPT), or Its combination. The material of the first electrode 110 is a conductive material, such as aluminum (Al), silver (Ag), chromium (Cr), copper (Cu), nickel (Ni), titanium (Ti), molybdenum (Mo), and magnesium (Mg). , Platinum (Pt), gold (Au), or a combination thereof. The first electrode 110 may have a single-layer, double-layer, or multilayer structure. For example, the first electrode 110 may have a three-layer structure composed of Ti / Al / Ti or a three-layer structure composed of Mo / Al / Mo, ITO / Ag / ITO. In some embodiments, the first electrode 110 includes a reflective electrode, and a material thereof may be a metal having good reflectivity to visible light, such as aluminum, molybdenum, gold, or a combination thereof. In this embodiment, the first electrode 110 may be an anode of the organic light emitting device 10.

Referring to FIG. 1B, at least one common hole injection layer 120 is selectively formed on the first electrode. For example, at least one common hole injection layer 120 is disposed in the light emitting region 102 and the non-light emitting region 104. The material of the common circuit layer 120 is, for example, xylylene blue copper, star-shaped aromatic amines, polyaniline, polyethylene dioxythiophene, or other suitable materials. In this embodiment, the common hole injection layer 120 is selectively a two-layer structure, and includes a first common hole injection layer 121 and a second common hole injection layer 122, but the present invention is not limited thereto. In some embodiments, the common hole injection layer may also be a single-layer or multi-layer structure.

Next, a plurality of organic light emitting structures SP1, SP2, and SP3 are formed on at least one common hole injection layer 120. These organic light emitting structures SP1, SP2, and SP3 are disposed adjacent to each other on the first electrode 110. It should be noted that these organic light emitting structures SP1, SP2, and SP3 include a hole transport layer and a light emitting layer, respectively. The colors of the light emitting layers of the organic light emitting structures may be the same or different, and the colors of the light emitting layers of the organic light emitting structures SP1, SP2, and SP3 may not be limited to a specific color.

Referring to FIG. 1C, first a first hole transport layer 130A is formed on the first electrode 110. For example, a part of the first hole transport layer 130A is formed on the first electrode 110 of the light emitting region 102, and another part of the edge of the first hole transport layer 130A extends to the non-light emitting region 104. The material of the first hole transport layer 130A is, for example, a triarylamine, a cross-structured diamine biphenyl, a diamine biphenyl derivative, or other suitable materials.

Referring to FIG. 1D, a first light emitting layer 140A is formed on the first hole transport layer 130A, and the first light emitting layer 140A covers the first hole transport layer 130A. For example, a portion of the first light-emitting layer 140A is formed in the light-emitting region 102 and another portion extends to the non-light-emitting region 104. The first light-emitting layer 140A completely covers the first hole transport layer 130A. In this embodiment, a portion of the first light emitting layer 140A extending to the non-light emitting region 104 is an edge of the first light emitting layer 140A, and may also be referred to as a first peripheral portion 142A. In this embodiment, the first light emitting layer 140A may be a red organic light emitting pattern, but the present invention is not limited thereto. In other embodiments, the first light-emitting layer 140A may also be a blue organic light-emitting pattern, a green organic light-emitting pattern, or a light-emitting pattern of different colors (eg, white, orange, yellow, etc.) generated by mixing light of various spectrums. The method for forming the first hole transport layer 130A and the first light emitting layer 140A is, for example, a vapor deposition method, but the present invention is not limited thereto. So far, the fabrication of the first organic light emitting structure SP1 among the plurality of organic light emitting structures SP1, SP2, and SP3 has been completed.

Next, referring to FIG. 1E, a second hole transport layer 130B is formed on the first electrode 110. For example, a part of the second hole transport layer 130B is formed on the first electrode 110 of the light emitting region 102, and another part of the edge of the second hole transport layer 130B extends to the non-light emitting region 104. Specifically, a part of the edge of the second hole transport layer 130B (for example, an edge portion located on the left side of the second hole transport layer 130B in the light emitting region 102) is stacked on the edge of the first light emitting layer 140A. That is, the edge of the second hole transport layer 130B is located on the edge of the non-light emitting region 104 and is stacked on the first peripheral portion 142A. The material of the second hole transport layer 130B is, for example, the same as or different from that of the first hole transport layer 130A.

Referring to FIG. 1F, a second light emitting layer 140B is formed on the second hole transport layer 130B. An edge of the second light-emitting layer 140B is stacked on an edge of the first light-emitting layer 140A, and covers the second hole-transporting layer 130B. For example, a part of the second light-emitting layer 140B is formed in the light-emitting region 102, and the other part extends to the non-light-emitting region 104. In this embodiment, a portion of the second light-emitting layer 140B extending to the non-light-emitting region 104 is an edge of the second light-emitting layer 140B, and may also be referred to as a second peripheral portion 142B. The second peripheral portion 142B of the second light-emitting layer 140B is partially overlapped with the edge of the first light-emitting layer 140A (for example, the left edge portion of the second light-emitting layer 140B in the light-emitting area 102), and the other portion of the second peripheral portion 142B is (Eg, the edge portion on the right side of the second light emitting layer 140B in the light emitting region 102) completely covers the second hole transport layer 130B. In this embodiment, the second light emitting layer 140B may be a green organic light emitting pattern, but the present invention is not limited thereto. In other embodiments, the second light-emitting layer 140B may also be a red organic light-emitting pattern, a blue organic light-emitting pattern, or a light-emitting pattern of different colors (eg, white, orange, yellow, etc.) generated by mixing light of different spectrums. The method for forming the second hole transport layer 130B and the second light-emitting layer 140B is, for example, a vapor deposition method, but the present invention is not limited thereto. So far, the formation of the second organic light emitting structure SP2 adjacent to the first organic light emitting structure SP1 has been completed.

Next, referring to FIG. 1G, a third hole transport layer 130C is formed on the first electrode 110. For example, a part of the third hole transport layer 130C is formed on the first electrode 110 of the light emitting region 102, and another part of the third hole transport layer 130C extends to the non-light emitting region 104. Specifically, a part of the edge of the third hole transmission layer 130C (for example, a left edge portion of the third hole transmission layer 130C in the light emitting region 102) is stacked on the edge of the second light emitting layer 140B. That is, the third hole transmission layer 130C is partially located on the edge of the non-light emitting region 104 and is stacked on the second peripheral portion 142B. The material of the third hole transport layer 130C is, for example, the same as or different from the first hole transport layer 130A and the second hole transport layer 130B.

Referring to FIG. 1H, a third light emitting layer 140C is formed on the third hole transport layer 130B. An edge of the third light emitting layer 140C is stacked on an edge of the second light emitting layer 140B, and covers the third hole transporting layer 130C. For example, a part of the third light emitting layer 140C is formed in the light emitting region 102, and the other part extends to the non-light emitting region 104. In this embodiment, a portion of the third light emitting layer 140C extending to the non-light emitting region 104 is an edge of the third light emitting layer 140C, and may also be referred to as a third peripheral portion 142C. A third peripheral portion 142C of the third light-emitting layer 140C (for example, a left edge portion of the third light-emitting layer 140C in the light-emitting region 102) is partially stacked on the edge of the first light-emitting layer 140A. In this embodiment, the third light emitting layer 140C may be a blue organic light emitting pattern, but the invention is not limited thereto. In other embodiments, the third light-emitting layer 140C may also be a red organic light-emitting pattern, a green organic light-emitting pattern, or a light-emitting pattern of different colors (eg, white, orange, yellow, etc.) generated by mixing light of different spectrums. The method for forming the third hole transport layer 130C and the third light emitting layer 140C is, for example, a vapor deposition method, but the present invention is not limited thereto. So far, the third organic light emitting structure SP3 and the second organic light emitting structure SP2 have been formed adjacently.

It is worth mentioning that, in the organic light emitting structure of the conventional organic light emitting device, the adjacent hole transporting layers will contact each other. In this embodiment, since the first light emitting layer 140A and the second light emitting layer 140B respectively cover the first hole transmission layer 130A and the second hole transmission layer 130B, the first hole transmission layer 130A and the second hole The transmission layers 130B are not in contact with each other. Specifically, the orthographic projection of the first light emitting layer 140A on the substrate 100 is larger than the orthographic projection of the first hole transport layer 130A on the substrate 100. The orthographic projection of the second light emitting layer 140B on the substrate is larger than the orthographic projection of the second hole transport layer 140A on the substrate 100. Therefore, the first peripheral portion 142A of the first light emitting layer 140A of the first organic light emitting structure SP1 completed first can completely cover the first hole transport layer 130A. The second hole transmission layer 130B of the second organic light emitting structure SP2 formed later is partially formed on the first peripheral portion 142A to be isolated from the first hole transmission layer 130A. Based on the above, compared with the conventional organic light emitting device, the first hole transmission layer 130A and the second hole transmission layer 130B in this embodiment can be effectively isolated from each other. Therefore, in the non-light emitting region 104, the current will not be transmitted to the second hole transmission layer 130B through the first hole transmission layer 130A. In other words, the first organic light emitting structure SP1 in this embodiment can increase the lateral resistance value to reduce the flow of the first organic light emitting structure SP1 to other organic light emitting structures (for example, the second organic light emitting structure SP2, but the present invention does not use this. (Limited) leakage current, reducing the phenomenon of pixel co-brightness, reducing the problem of color shift of pixels at low brightness, and thereby having good display quality.

In addition, in this embodiment, the second peripheral portion 142B of the second light emitting layer 140B may also completely cover the second hole transport layer 130B. In other words, the second peripheral portion 142B of the second light emitting layer 140B of the second organic light emitting structure SP2 may completely cover the second hole transport layer 130B. The third hole transport layer 130C of the third organic light emitting structure SP3 formed next is partially formed on the second peripheral portion 142B and is isolated from the third hole transport layer 130C. That is, the second hole transmission layer 130B and the third hole transmission layer 130C are not in contact with each other. Therefore, the second organic light-emitting structure SP2 in this embodiment can also increase the lateral resistance value to reduce the flow of the second organic light-emitting structure SP2 to other organic light-emitting structures (for example, the third organic light-emitting structure SP3, but the present invention does not take this as an example). Limit) leakage current, reducing the phenomenon of pixel co-brightness, reducing the problem of color shift of pixels at low brightness, and thereby having good display quality.

Referring to FIGS. 1I and 1J at the same time, an electron transport layer 150 and an electron injection layer 160 are sequentially formed on the organic light emitting structures SP1, SP2, and SP3. For example, the electron transport layer 150 and the electron injection layer 160 are both disposed in the light emitting region 102 and the non-light emitting region 104. The method of forming the electron transport layer 150 and the electron injection layer includes, for example, performing a vapor deposition process or an inkjet process. The material of the electron transporting layer 150 includes, for example, an oxazole derivative and a dendrimer thereof, a metal chelate compound, an azole compound, a diazaanthracene derivative, a silicon-containing heterocyclic compound, or other suitable materials. The material of the electron injection layer 160 includes, for example, lithium oxide, lithium boron oxide, potassium silicon oxide, cesium carbonate, sodium acetate, lithium fluoride base, or other suitable materials. It is worth mentioning that, in this embodiment, the organic light emitting device 10 includes an electron transport layer 150 and an electron injection layer 160, but the present invention is not limited thereto. In other embodiments, the organic light emitting device 10 may include only the electron transport layer 150 or the electron injection layer 160, or the organic light emitting device 10 may not include the electron transport layer 150 and the electron injection layer 160. That is, the configurations of the electron transport layer 150 and the electron injection layer 160 are optional.

Referring to FIG. 1K, a second electrode 170 is formed on the first electrode 110. In detail, in this embodiment, the second electrode layer 170 is disposed in the light emitting region 102 and the non-light emitting region 104 corresponding to the first electrode 110. In this embodiment, the material of the second electrode 170 may be a transparent conductive material, such as a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or indium germanium zinc oxide. In some embodiments, the method for forming the second electrode 170 may be chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), evaporation (VTE), sputtering (SPT), or Its combination. In some embodiments, the second electrode 170 may be a cathode of the organic light emitting device 10.

With the above arrangement, in this embodiment, after the first hole transport layer 130A is provided, the first light emitting layer 140A covering the first hole transport layer 130A is first formed to complete the first organic light emitting structure. The setting of SP1 is followed by the setting of the second hole transmission layer 130B of the second organic light emitting structure SP2. Therefore, the first hole transport layer 130A and the second hole transport layer 130B can be effectively separated by the first light emitting layer 140A. Similarly, the third hole transport layer 130C and the second hole transport layer 130B of the third organic light emitting structure SP3 can also be effectively separated by the second light emitting layer 140B. In this way, the current of the first organic light-emitting structure SP1 cannot easily flow through the first light-emitting layer 140A having a high resistance to the second organic light-emitting structure SP2, thereby reducing the generation of side currents and reducing co-brightness between pixels. . Incidentally, the present invention does not specifically limit the colors of the organic light emitting structures SP1, SP2, and SP3. In this embodiment, the first (two or three) light emitting layer is, for example, one of the red / green / or blue light emitting layers, and the light emission of the first / second / third light emitting layers 130A, 130B, 130C is The colors are different, but not limited to this.

From a structural point of view, please refer to FIG. 1K. From the substrate 100, the organic light-emitting device 10 includes the above-mentioned first electrode 110, a common hole injection layer 120, a plurality of organic light-emitting structures SP1, SP2, SP3, and an electron transport layer. 150. The electron injection layer 160 and the second electrode 170. For example, the common hole injection layer 120 is located between the first electrode 110 and the organic light emitting structures SP1, SP2, and SP3. The electron transport layer 150 or the electron injection layer 160 is located between these organic light emitting structures SP1, SP2, SP3 and the second electrode 170.

In this embodiment, the organic light emitting structures SP1, SP2, and SP3 are located between the first electrode 110 and the second electrode 120, and the organic light emitting structures SP1, SP2, and SP3 include hole transport layers 130A, 130B, 130C, and 130C, respectively. The light emitting layers 140A, 140B, and 140C. In detail, the first organic light emitting structure SP1 is disposed adjacent to the second organic light emitting structure, and the first light emitting layer 140A included in the first organic light emitting structure SP1 covers the first hole transport layer 130A. The second light emitting layer 140B included in the second organic light emitting structure SP2 covers the second hole transporting layer 130B. Since the first peripheral portion 142A of the first light emitting layer 140A is partially located between the first hole transmission layer 130A and the second hole transmission layer 130B, the first hole transmission layer 130A and the second hole transmission layer 130B Separated. Therefore, the lateral resistance between the first organic light emitting structure SP1 and the second organic light emitting structure SP2 can be increased, the generation of side current can be avoided, and the co-brightness phenomenon between pixels can be reduced.

In this embodiment, the organic light emitting device 10 further includes a third light emitting structure SP3. The third light emitting structure SP3 is adjacent to the second light emitting structure SP2, and the third light emitting layer 140C included in the third light emitting structure SP3 covers the third hole transport layer 130C. Since the second peripheral portion 142B of the second light emitting layer 140B is partially located between the second hole transmission layer 130B and the third hole transmission layer 130C, the second hole transmission layer 130B and the third hole transmission layer 130C are separated from each other. open. Therefore, the lateral resistance between the second organic light emitting structure SP2 and the third organic light emitting structure SP3 can be increased, the generation of side current can be avoided, and the co-brightness phenomenon between pixels can be reduced.

It is worth mentioning that, in this embodiment, the orthographic projections of the light emitting layers 140A, 140B, and 140C on the substrate 100 are larger than the orthographic projections of the corresponding hole transmission layers 130A, 130B, and 130C on the substrate 100. Specifically, the orthographic projection of the first light emitting layer 140A on the substrate 100 is greater than the orthographic projection of the corresponding first hole transport layer 130A on the substrate 100. Due to the above configuration, the first light emitting layer 140A may cover the first hole transporting layer 130A. Similarly, the orthographic projection of the second light emitting layer 140B on the substrate 100 is greater than the orthographic projection of the corresponding second hole transmission layer 130B on the substrate 100, and the orthographic projection of the third light emitting layer 140C on the substrate 100 is greater than the corresponding third hole. The orthographic projection of the transmission layer 130C on the substrate 100. Therefore, the second light emitting layer 140B and the third light emitting layer 140C may respectively cover the corresponding second hole transmission layer 130B and the third hole transmission layer 130C to isolate the first hole transmission layer 130A and the second hole transmission. The layer 130B and the third hole transmission layer 130C avoid the generation of side currents and reduce the co-brightness phenomenon between pixels.

It must be noted here that the following embodiments follow the component numbers and parts of the previous embodiments, in which the same reference numerals are used to indicate the same or similar components. For the description of parts that omit the same technical content, refer to the foregoing embodiments. The details are not repeated in the following embodiments.

FIG. 2 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention. 1K and FIG. 2, the organic light-emitting device 10 ′ of this embodiment is similar to the organic light-emitting device 10 of FIG. 1K. The main difference is that in this embodiment, the third light-emitting layer 140C ′ covers the first The organic light emitting structure SP1 and the second organic light emitting structure SP2. Specifically, in this embodiment, after the first organic light emitting structure SP1 is formed on the first electrode 110, a second organic light emitting structure SP2 is formed. Next, a third light emitting layer 140C 'is formed on the first light emitting layer 140A and the second light emitting layer 140B. After that, an electron injection layer 160 is formed on the third light emitting layer 140C '. In this embodiment, the third light emitting layer 140C ′ may be, for example, a blue organic light emitting pattern, and the first and / or second light emitting layers 140A, 140B may be red and / or green organic light emitting patterns, respectively. Not limited to this. With such a configuration, the organic light emitting device 10 'can obtain similar technical effects to those of the above embodiments.

FIG. 3 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention. Please refer to FIG. 1K and FIG. 3. The organic light-emitting device 10 ″ of this embodiment is similar to the organic light-emitting device 10 of FIG. 1K. The main difference is that in this embodiment, the organic light-emitting device 10 ″ At least two stacked layers P1 and P2 are stacked, and these stacked layers P1 and P2 are located between the first electrode 110 and the second electrode 170. The stacks P1 and P2 include the organic light emitting structures SP1, SP2, and SP3, respectively. Specifically, in this embodiment, the stack P1 may include a common hole injection layer 120, a plurality of organic light emitting structures SP1, SP2, SP3, an electron transport layer 150, and an electron injection layer 160 from bottom to top. However, the present invention Not limited to this. In other embodiments, the stack P1 may include only a plurality of light emitting structures SP1, SP2, and SP3. That is, the configurations of the common hole injection layer 120, the electron transport layer 150, and the electron injection layer 160 are optional. In this embodiment, the stack P2 has the same structure as the stack P1. The stack P2 includes a common hole injection layer 120, a plurality of organic light emitting structures SP1, SP2, SP3, an electron transport layer 150, and an electron injection layer 160. However, The invention is not limited to this. In other embodiments, the structure of the stack P2 may be different from that of the stack P1.

In this embodiment, the stack P2 is stacked on the stack P1. The organic light emitting device 10 '' further includes a charge generation layer 180 (Charge Generation Layer, CGL) disposed between the stack P1 and the stack P2. A method for forming the charge generating layer 180 is, for example, a vapor deposition method. For example, in this embodiment, the charge generating layer 180 is disposed between the electron injection layer 160 of the stack P1 and the common hole injection layer 120 of the stack P2, but the invention is not limited thereto. With such a configuration, the organic light emitting device 10 '' can obtain similar technical effects to those of the above embodiments.

In summary, the organic light emitting device of the present invention includes forming a plurality of organic light emitting structures, each of which includes a hole transport layer and a light emitting layer, and the light emitting layer covers the hole transport layer. Therefore, the light-emitting layer can cover the hole-transporting layer and prevent the hole-transporting layers of the organic light-emitting devices from contacting each other. Further, the manufacturing method of the organic light-emitting device of the present invention is to sequentially complete the organic light-emitting structures on the first electrode, wherein the hole-transporting layer of one of the organic light-emitting structures is formed first, and then the light-emitting layer covers the holes. The transmission layer, and the orthographic projection of each light-emitting layer on the substrate is greater than the orthographic projection of each hole transmission layer on the substrate. Therefore, the hole transporting layers of the adjacent organic light emitting structures formed subsequently will be separated by the light emitting layer. As a result, the lateral resistance between the hole transport layers of multiple adjacent organic light emitting structures can be improved, reducing the generation of side currents, reducing the co-brightness phenomenon between pixels, and improving the pixel-brightness. Color shift problem, thereby improving the display quality of the organic light emitting device.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

10, 10 ’, 10’’‧‧‧ organic light-emitting device

100‧‧‧ substrate

102‧‧‧light-emitting area

104‧‧‧non-light emitting area

110‧‧‧first electrode

120‧‧‧Total hole injection layer

121‧‧‧The first common hole injection layer

122‧‧‧Second common hole injection layer

130A‧‧‧The first hole transmission layer

130B‧‧‧Second hole transmission layer

130C‧‧‧The third hole transmission layer

140A‧‧‧First luminescent layer

140B‧‧‧Second luminous layer

140C, 140C’‧‧‧third light emitting layer

142A‧‧‧First peripheral

142B‧‧‧Second Peripheral

142C‧‧‧Third Peripheral

150‧‧‧ electron transmission layer

160‧‧‧ Electron injection layer

170‧‧‧Second electrode

180‧‧‧ charge generation layer

P1, P2‧‧‧ stacked

SP1‧‧‧first organic light emitting structure

SP2‧‧‧Second Organic Light Emitting Structure

SP3‧‧‧third organic light emitting structure

1A to 1K are schematic cross-sectional views of a method for manufacturing an organic light-emitting device according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of an organic light emitting device according to another embodiment of the present invention.

Claims (10)

An organic light-emitting device having a light-emitting area and a non-light-emitting area, the organic light-emitting device includes: a substrate; a first electrode, the first electrode is disposed in the light-emitting area; a second electrode is located on the first electrode, The second electrode corresponds to the first electrode and is disposed in the light-emitting area and the non-light-emitting area; and a plurality of organic light-emitting structures between the first electrode and the second electrode, each of the organic light-emitting structures includes a hole transport layer And a light-emitting layer, wherein the light-emitting layer covers the hole transport layer, wherein the organic light-emitting structures include an adjacent first organic light-emitting structure and a second organic light-emitting structure, and the first organic light-emitting structure includes a A first hole transmission layer and a first light-emitting layer covering the first hole transmission layer, the second organic light-emitting structure includes a second hole transmission layer and a first covering the second hole transmission layer Two light emitting layers, the first light emitting layer has a first peripheral portion, the first peripheral portion is partially located between the first hole transmission layer and the second hole transmission layer to transmit the first hole The layer is separated from the second hole transmission layer. The organic light-emitting device as described in item 1 of the patent application further includes: a third light-emitting layer covering the first organic light-emitting structure and the second organic light-emitting structure. The organic light-emitting device as described in item 1 of the scope of the patent application further includes: a third light-emitting structure adjacent to the second light-emitting structure, the third organic light-emitting structure including a third hole transmission layer and covering the A third light emitting layer of one of the third hole transport layers, the second light emitting layer has a second peripheral portion, the second peripheral portion is partially located between the second hole transport layer and the third hole transport layer To separate the second hole transmission layer from the third hole transmission layer. The organic light-emitting device as described in item 1 of the patent application further includes: an electron transport layer or an electron injection layer between the organic light-emitting structures and the second electrode. The organic light-emitting device as described in item 1 of the patent application range, wherein the orthographic projection of the light-emitting layer on the substrate is greater than the corresponding orthographic projection of the hole transport layer on the substrate. The organic light-emitting device according to item 1 of the scope of the patent application further includes: at least one common hole injection layer between the first electrode and the organic light-emitting structures. The organic light-emitting device as described in item 1 of the patent application range, wherein the organic light-emitting device comprises: at least two stacked layers stacked one above the other, located between the first electrode and the second electrode, each of the stacked layers including these Organic light emitting structure. A method for manufacturing an organic light-emitting device, comprising: forming a first electrode on a substrate; forming a first hole transmission layer on the first electrode; forming a first light-emitting layer on the first hole transmission layer , The first light-emitting layer encapsulates the first hole transmission layer; forms a second hole transmission layer, the edge of the second hole transmission layer overlaps the edge of the first light-emitting layer; forms a second light emission Layer, the edge of the second light-emitting layer is stacked on the edge of the first light-emitting layer and the second light-emitting layer covers the second hole transmission layer; and a second electrode is formed. The method for manufacturing an organic light-emitting device as described in item 8 of the patent application range, wherein the orthographic projections of the first light-emitting layer and the second light-emitting layer on the substrate are larger than the first hole transmission layer and the second hole, respectively Orthographic projection of the transmission layer on the substrate. The method for manufacturing an organic light-emitting device as described in item 8 of the patent application range, wherein the first light-emitting layer includes a first peripheral portion that isolates the first hole transmission layer and the second hole transmission Layer so that the first hole transmission layer and the second hole transmission layer are not in contact with each other.