TWI682233B - 遮罩基底、相移遮罩及相移遮罩之製造方法、與半導體裝置之製造方法 - Google Patents
遮罩基底、相移遮罩及相移遮罩之製造方法、與半導體裝置之製造方法 Download PDFInfo
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- TWI682233B TWI682233B TW105109531A TW105109531A TWI682233B TW I682233 B TWI682233 B TW I682233B TW 105109531 A TW105109531 A TW 105109531A TW 105109531 A TW105109531 A TW 105109531A TW I682233 B TWI682233 B TW I682233B
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- Prior art keywords
- phase shift
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-067259 | 2015-03-27 | ||
| JP2015067259 | 2015-03-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201640216A TW201640216A (zh) | 2016-11-16 |
| TWI682233B true TWI682233B (zh) | 2020-01-11 |
Family
ID=57006798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105109531A TWI682233B (zh) | 2015-03-27 | 2016-03-25 | 遮罩基底、相移遮罩及相移遮罩之製造方法、與半導體裝置之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10365556B2 (enExample) |
| JP (2) | JP6073028B2 (enExample) |
| KR (1) | KR102069960B1 (enExample) |
| TW (1) | TWI682233B (enExample) |
| WO (1) | WO2016158649A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6058757B1 (ja) * | 2015-07-15 | 2017-01-11 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| US10712655B2 (en) * | 2016-07-25 | 2020-07-14 | Hoya Corporation | Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP6772037B2 (ja) * | 2016-11-11 | 2020-10-21 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| JP6740107B2 (ja) | 2016-11-30 | 2020-08-12 | Hoya株式会社 | マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
| JP6812236B2 (ja) * | 2016-12-27 | 2021-01-13 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP6400763B2 (ja) * | 2017-03-16 | 2018-10-03 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
| JP7126836B2 (ja) * | 2017-03-28 | 2022-08-29 | Hoya株式会社 | 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びにパターン転写方法 |
| JP6716629B2 (ja) * | 2017-05-18 | 2020-07-01 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びその製造方法 |
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| TW201640216A (zh) | 2016-11-16 |
| KR102069960B1 (ko) | 2020-01-23 |
| US10365556B2 (en) | 2019-07-30 |
| JP2017058703A (ja) | 2017-03-23 |
| JP6709540B2 (ja) | 2020-06-17 |
| WO2016158649A1 (ja) | 2016-10-06 |
| JP2016189002A (ja) | 2016-11-04 |
| JP6073028B2 (ja) | 2017-02-01 |
| US20180129130A1 (en) | 2018-05-10 |
| KR20170123346A (ko) | 2017-11-07 |
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