TWI673866B - 薄膜電晶體及其製造方法、顯示面板及顯示裝置 - Google Patents

薄膜電晶體及其製造方法、顯示面板及顯示裝置 Download PDF

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TWI673866B
TWI673866B TW106106398A TW106106398A TWI673866B TW I673866 B TWI673866 B TW I673866B TW 106106398 A TW106106398 A TW 106106398A TW 106106398 A TW106106398 A TW 106106398A TW I673866 B TWI673866 B TW I673866B
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thin film
film transistor
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單奇
胡坤
林立
劉嵩
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大陸商昆山工研院新型平板顯示技術中心有限公司
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Abstract

一種薄膜電晶體及其製造方法、顯示面板及顯示裝置，該薄膜電晶體包括依次形成於柔性基板上的主動區、閘極絕緣層、閘極、源極、汲極、鈍化層以及平坦化層，在該鈍化層與該平坦化層之間形成有保護層，該保護層位於該主動區及該閘極的正上方；藉由保護層對薄膜電晶體的垂直區域的半導體材料產生保護作用，從而降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質。

Description

薄膜電晶體及其製造方法、顯示面板及顯示裝置
本發明有關於柔性顯示技術領域，特別有關於一種薄膜電晶體及其製造方法、顯示面板及顯示裝置。
有機發光設備，即有機發光二極體(Organic Light-Emitting Diode，簡稱OLED)，又稱為有機電致發光顯示(Organic Electroluminesence Display)具有全固態特性，機械性能好，抗震動性強，使用塑膠、聚酯薄膜或膠片作為基板，OLED螢幕可以做到更薄，甚至可以折疊或捲起來，以實現柔性軟螢幕顯示。
隨著顯示技術的發展，研發人員對可折疊或捲起的柔性顯示裝置不斷作出改進，與傳統的剛性顯示裝置(即製作在玻璃等不可彎曲的基材上的顯示裝置)相比，柔性顯示裝置具有諸多優勢，如重量輕、體積小、攜帶更為方便，更高的耐衝擊性以及更強的抗震性能等。
但是，柔性顯示裝置在彎曲的情況下，多層結構由於各層材料楊氏模數不同，會在介面處產生大量缺陷，從而影響設備性能，而薄膜電晶體作為柔性顯示裝置中重要的功能設備，其性能對於柔性產品的整體性能有重大的影響。現有技術一般藉由最佳化設備結構，減少高硬度膜層的厚度，使相鄰結構的膜層硬度盡可能接近，從而減少功能層受到的損傷。但是，薄膜電晶體中各層材料 的厚度的改變可能對薄膜電晶體的性能產生影響，導致最終的產品達不到預計的效果。
因此，極需提供一種避免薄膜電晶體設備在彎曲過程中可能會造成損傷的方法。
本發明的目的在於提供一種薄膜電晶體及其製造方法、顯示面板及顯示裝置，對薄膜電晶體中的半導體材料形成保護，降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷。
為實現上述目的，本發明提供一種薄膜電晶體，該薄膜電晶體包括依次形成於柔性基板之上的主動區、閘極絕緣層、閘極、源極、汲極、鈍化層以及平坦化層，在該鈍化層與該平坦化層之間形成有保護層，該保護層位於該主動區及該閘極的正上方。
可任選的，在所述的薄膜電晶體中，該保護層位於該主動區及該閘極的正上方完全覆蓋該閘極。
可任選的，在所述的薄膜電晶體中，該保護層的材質為有機物。
可任選的，在所述的薄膜電晶體中，該保護層的材質為金屬。
可任選的，在所述的薄膜電晶體中，該保護層在垂直於該閘極的方向上覆蓋該閘極與源極和汲極之間的間隙。
可任選的，在所述的薄膜電晶體中，該保護層的楊氏模數大於300N/m2。
可任選的，在所述的薄膜電晶體中，還包括：上層保 護膜、下層保護膜與阻擋層；該上層保護膜設置於該平坦化層之上，該下層保護膜設置於該柔性基板之下，該阻擋層設置於該柔性基板與該閘極絕緣層之間。
相應的，本發明還提供一種薄膜電晶體的製造方法，製造上述薄膜電晶體，其方法包括：在柔性基板上依次形成主動區、閘極絕緣層、閘極、源極與汲極以及鈍化層，在該鈍化層上形成保護層，在該保護層上形成平坦化層；該保護層位於該主動區及該閘極的正上方。
相應的，本發明還提供一種顯示面板，該顯示面板包括如上所述的薄膜電晶體。
相應的，本發明還提供一種顯示裝置，該顯示裝置包括如上所述的顯示面板。
與現有技術相比，本發明提供的薄膜電晶體及其製造方法、顯示面板及顯示裝置具有以下有益效果：1、在薄膜電晶體的鈍化層與平坦化層之間形成一層保護層，保護層位於該主動區及該閘極的正上方，對其垂直區域的半導體材料產生保護作用，從而降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質；2、保護層採用金屬材質時，該保護層在垂直於該閘極的方向上覆蓋該主動區、閘極、源極及汲極之間的間隙，由於閘極的材料也可以有較好的支撐作用，保護層與閘極材料相互交疊的結構也可以有對下方半導體材料的保護，並且該保護層與閘極存在較小的交疊面積可以減少保護層由於寄生電容問題對薄膜電晶體的影響。
10‧‧‧柔性基板
11‧‧‧主動區
12‧‧‧閘極絕緣層
13‧‧‧閘極
14‧‧‧源極
15‧‧‧汲極
16‧‧‧鈍化層
17‧‧‧平坦化層
18‧‧‧保護層
19‧‧‧層間絕緣層
20‧‧‧上層保護膜、下層保護膜
30‧‧‧阻擋層
圖1為本發明實施例提供的一種薄膜電晶體的結構示意圖；圖2為本發明實施例提供的另一種薄膜電晶體的結構示意圖。
為使本發明的內容更加清楚易懂，以下結合說明書附圖，對本發明的內容做進一步說明。當然本發明並不侷限於該具體實施例，本領域的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。
其次，本發明利用示意圖進行詳細的表述，在詳述本發明實例時，為了便於說明，示意圖不依照一般比例局部放大，不應對此作為本發明的限定。
本發明的核心思想在於，在薄膜電晶體的鈍化層與平坦化層之間形成一層保護層，保護層位於該主動區及該閘極的正上方，對其垂直區域的半導體材料產生保護作用，從而降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質。
[實施例一]
圖1為本發明實施例提供的一種薄膜電晶體的結構示意圖，如圖1所示，本實施例提出的薄膜電晶體包括依次形成於柔性基板10上的主動區11、閘極絕緣層12、閘極13、源極14、汲極15、鈍化層16以及平坦化層17，在該鈍化層16與該平坦化層17之間形成有保護層18，該保護層18位於該主動區11及該閘極13的正上方。
從圖1中可以看出，該保護層18位於該主動區11及該閘極13的正上方，且該保護層18在垂直於該閘極13的方向上完全覆蓋該閘極13。較佳地，該保護層18除了在垂直方向上完全覆蓋該閘極13之外，還可以至少覆蓋(較佳完全覆蓋)該閘極13與源極14和汲極15之間的間隙對應的區域。該保護層18的材質為有機物或者金屬，也可以是本領域技術人員已知的其他材料，該保護層18對其垂直區域內的半導體材料產生保護作用，從而降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質。
較佳的，該保護層18的楊氏模數大於300N/m2，例如350N/m2、400N/m2、450N/m2或500N/m2，從而可以有效減小保護層18下方的薄膜電晶體部分在彎曲過程中受到的應力。
當該保護層18的材質為金屬時，由於金屬保護層與閘極13之間可能會產生寄生電容從而可能影響薄膜電晶體的性能，因此作為薄膜電晶體的另一種結構方案，可以設法減少金屬保護層與閘極13之間的交疊面積。如圖2所示，該保護層18採用金屬材質，該保護層18在垂直於該閘極13的方向上覆蓋該主動區11的一部分，且能完全覆蓋該閘極13與源極14和汲極15之間的間隙，由於閘極13也是採用金屬材料製成，其本身即可有較好的支撐作用，因此主要採用保護層18對閘極13與源極14和汲極15之間的間隙區域進行保護。在圖2所示結構中，保護層18與閘極13在垂直方向上可以只有很小的交疊面積，藉由保護層18與閘極13(均為金屬材料)相互交疊的結構可以有對下方半導體材料的保 護，並且保護層18與閘極13的交疊面積較小，因此可以將寄生電容控制在可接受範圍以內，例如小於某一預設臨界值，從而減少寄生電容對薄膜電晶體的影響。
該薄膜電晶體還包括上層保護膜20、下層保護膜20與阻擋層30(Barrier film)，該上層保護膜20設置於該平坦化層17之上，該下層保護膜20設置於該柔性基板10之下，該阻擋層30設置於該柔性基板10與閘極絕緣層12之間，用於阻擋水氧分子。另外在圖1與圖2所示結構中還形成有層間絕緣層19，該層間絕緣層19覆蓋該閘極13。
可以理解的是，本發明所提供的薄膜電晶體是在傳統薄膜電晶體的基礎上在鈍化層與平坦化層之間形成保護層，用於保護下方的半導體材料，因此對薄膜電晶體的組成部分僅作簡單的說明。
[實施例二]
本發明提供一種製備實施例一所述的薄膜電晶體的方法，包括：在柔性基板10上依次形成主動區11、閘極絕緣層12、閘極13、源極14與汲極15以及鈍化層16，在該鈍化層16上形成保護層18，在該保護層18上形成平坦化層17；該保護層18位於該主動區11及該閘極13的正上方。最終形成圖1或圖2所示的結構。
該保護層18對其垂直區域內的半導體材料產生保護作用，從而降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質。
該保護層18根據保護層材料的不同製作成如實施例一所述的不同的結構，分別示於圖1和圖2中。
[實施例三]
本實施例提供一種顯示面板，其包括實施例一所述的薄膜電晶體。
本實施例的顯示面板中具有實施例一中的薄膜電晶體，故在薄膜電晶體的鈍化層與平坦化層之間形成一層保護層，保護層位於該主動區及該閘極的正上方，對其垂直區域的半導體材料產生保護作用，從而降低薄膜電晶體的部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質；保護層採用金屬材質時，該保護層在垂直於該閘極的方向上覆蓋該主動區的一部分以及完全覆蓋該閘極與源極和汲極之間的間隙，由於閘極的材料也可以有較好的支撐作用，保護層與閘極材料相互交疊的結構也可以有對下方半導體材料的保護，並且保護層與閘極的交疊面積較小，因此可以減少寄生電容對薄膜電晶體的影響。
[實施例四]
本實施例提供一種顯示裝置，其包括實施例三所述的顯示面板。
本實施例中的顯示裝置具有實施例三中的顯示面板，故在薄膜電晶體的鈍化層與平坦化層之間形成一層保護層，保護層位於該主動區及該閘極的正上方，對其垂直區域內的半導體材 料產生保護作用，從而降低薄膜電晶體部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質；保護層採用金屬材質時，該保護層在垂直於該閘極的方向上覆蓋該主動區的一部分以及完全覆蓋該閘極與源極和汲極之間的間隙，由於閘極的材料也可以有較好的支撐作用，保護層與閘極材料相互交疊的結構也可以有對下方半導體材料的保護，並且保護層與平坦化層較小的交疊面積可以減少保護層由於寄生電容問題對薄膜電晶體的影響。
綜上所述，本發明提供的薄膜電晶體及其製造方法、顯示面板及顯示裝置，在薄膜電晶體的鈍化層與平坦化層之間形成一層保護層，保護層位於該主動區及該閘極的正上方，對其垂直區域內的半導體材料產生保護作用，從而降低薄膜電晶體部分材料在彎曲過程中受到的應力，避免薄膜電晶體設備在彎曲過程中可能會造成半導體材料的損傷，進而提高設備的品質；保護層採用金屬材質時，該保護層在垂直於該閘極的方向上覆蓋該主動區的一部分以及完全覆蓋該閘極與源極和汲極之間的間隙，由於閘極的材料也可以有較好的支撐作用，保護層與閘極材料相互交疊的結構也可以有對下方半導體材料的保護，並且保護層與閘極的交疊面積較小，因此可以減少寄生電容對薄膜電晶體的影響。
上述描述僅是對本發明較佳實施例的描述，並非對本發明範圍的任何限定，本發明領域的普通技術人員根據上述揭示內容做的任何變更、修飾，均屬於請求項的保護範圍。

Claims (6)

  1. 一種薄膜電晶體，包括依次形成於一柔性基板之上的一主動區、一閘極絕緣層、一閘極、一源極與一汲極、一鈍化層以及一平坦化層，其特徵在於：在該鈍化層與該平坦化層之間形成有一保護層，該保護層位於該主動區及該閘極的正上方以降低該薄膜電晶體在彎曲過程中受到的應力，其中，該保護層的材質為金屬，該保護層在垂直於該閘極的方向上覆蓋該主動區的一部分，且能完全覆蓋該閘極與該源極和該汲極之間的間隙，且未完全覆蓋該閘極。
  2. 如請求項1之薄膜電晶體，其中，該保護層的楊氏模數大於300N/m2。
  3. 如請求項1或2之薄膜電晶體，還包括：一上層保護膜、一下層保護膜與一阻擋層；該上層保護膜設置於該平坦化層之上，該下層保護膜設置於該柔性基板之下，該阻擋層設置於該柔性基板與該閘極絕緣層之間。
  4. 一種製造請求項1至3中任一項之薄膜電晶體的方法，包括：在該柔性基板上依次形成該主動區、該閘極絕緣層、該閘極、該源極與該汲極以及該鈍化層，在該鈍化層上形成該保護層，在該保護層上形成該平坦化層；該保護層位於該主動區及該閘極的正上方。
  5. 一種顯示面板，其包括請求項1至3中任一項之薄膜電晶體。
  6. 一種顯示裝置，其包括請求項5之顯示面板。
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