JP6749400B2 - 薄膜トランジスタとその製造方法、ディスプレイパネル、ディスプレイ装置 - Google Patents
薄膜トランジスタとその製造方法、ディスプレイパネル、ディスプレイ装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011241 protective layer Substances 0.000 claims description 74
- 239000010410 layer Substances 0.000 claims description 52
- 239000010408 film Substances 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 12
- 230000003071 parasitic effect Effects 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000009751 slip forming Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 22
- 238000005452 bending Methods 0.000 description 17
- 230000008093 supporting effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Description
前記上部保護フィルムは前記平坦化層の上方に配置され、前記下部保護フィルムは前記フレキシブル基板の下方に配置され、前記バリアフィルムは前記フレキシブル基板と前記ゲート絶縁層との間に配置されている。
図1は、本発明の実施形態に係る薄膜トランジスタの概略構造図である。図1に示すように、本実施形態に係る薄膜トランジスタは、アクティブ領域11、ゲート絶縁層12、ゲート13、ソース14とドレイン15、パッシベーション層16、平坦化層17を備えており、これらはフレキシブル基板10上に連続して形成されている。保護層18は、パッシベーション層16と平坦化層17との間に形成され、アクティブ領域11とゲート13の真上に配置されている。
本発明は、実施形態1で説明した薄膜トランジスタを製造する方法を提供する。この方法は、アクティブ領域11、ゲート絶縁層12、ゲート13、ソース14とドレイン15、パッシベーション層16、をフレキシブル基板10上に連続的に形成するステップを有し、保護層18はパッシベーション層16上に形成され、平坦化層17は保護層18上に形成され、保護層18はアクティブ領域11とゲート13の真上に配置される。最終的に、図1または図2の構造が形成される。
本実施形態は、実施形態1で説明した薄膜トランジスタを備えるディスプレイパネルを提供する。
本実施形態は、実施形態3で説明したディスプレイパネルを備えるディスプレイ装置を提供する。
Claims (6)
- フレキシブル基板上に連続的に形成されたアクティブ領域、ゲート絶縁層、ゲート、ソースとドレイン、パッシベーション層、および平坦化層を備え、前記パッシベーション層と前記平坦化層との間に保護層が配置され、前記保護層は前記アクティブ領域と前記ゲートの真上に配置されており、
前記保護層は、金属によって作られており、
前記保護層は、前記ゲートに対して垂直な方向において、前記アクティブ領域の一部を覆っており、
前記保護層は、前記ゲートと前記ソースとの間のギャップを完全に覆うとともに、前記ゲートと前記ドレインとの間のギャップを完全に覆い、
前記保護層と前記ゲートが重なっている領域は、前記保護層と前記ゲートとの間の寄生容量が許容範囲内に収まるサイズを有する
ことを特徴とする薄膜トランジスタ。 - 前記保護層は、300N/m2よりも大きいヤング率を有する
ことを特徴とする請求項1記載の薄膜トランジスタ。 - 前記薄膜トランジスタはさらに、上部保護フィルム、下部保護フィルム、およびバリアフィルムを備え、
前記上部保護フィルムは前記平坦化層の上方に配置され、前記下部保護フィルムは前記フレキシブル基板の下方に配置され、前記バリアフィルムは前記フレキシブル基板と前記ゲート絶縁層との間に配置されている
ことを特徴とする請求項1または2記載の薄膜トランジスタ。 - 請求項1から3のいずれか1項記載の薄膜トランジスタを製造する方法であって、
アクティブ領域、ゲート絶縁層、ゲート、ソースとドレイン、およびパッシベーション層をフレキシブル基板上に連続的に形成するステップ、
前記パッシベーション層上に保護層を形成するステップ、
前記保護層上に平坦化層を形成するステップ、
を有し、
前記保護層は、前記アクティブ領域と前記ゲートの真上に配置されている
ことを特徴とする方法。 - 請求項1から3のいずれか1項記載の薄膜トランジスタを備えることを特徴とするディスプレイパネル。
- 請求項5記載のディスプレイパネルを備えることを特徴とするディスプレイ装置。
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CN201610111984.XA CN107134496B (zh) | 2016-02-29 | 2016-02-29 | 薄膜晶体管及其制造方法、显示面板及显示装置 |
CN201610111984.X | 2016-02-29 | ||
PCT/CN2017/075001 WO2017148348A1 (zh) | 2016-02-29 | 2017-02-27 | 薄膜晶体管及其制造方法、显示面板及显示装置 |
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JP2019505838A JP2019505838A (ja) | 2019-02-28 |
JP6749400B2 true JP6749400B2 (ja) | 2020-09-02 |
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EP (1) | EP3425677B1 (ja) |
JP (1) | JP6749400B2 (ja) |
KR (1) | KR102155434B1 (ja) |
CN (1) | CN107134496B (ja) |
TW (1) | TWI673866B (ja) |
WO (1) | WO2017148348A1 (ja) |
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CN108091612B (zh) * | 2017-12-07 | 2020-11-24 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制备方法 |
CN108054291B (zh) * | 2017-12-28 | 2019-10-01 | 上海天马有机发光显示技术有限公司 | 一种柔性显示面板及其制备方法、柔性显示装置 |
CN109887956B (zh) * | 2019-01-25 | 2021-04-27 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管柔性阵列基板 |
TW202032226A (zh) * | 2020-01-14 | 2020-09-01 | 友達光電股份有限公司 | 軟性電路結構 |
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US5828084A (en) * | 1995-03-27 | 1998-10-27 | Sony Corporation | High performance poly-SiGe thin film transistor |
KR100528326B1 (ko) | 2002-12-31 | 2005-11-15 | 삼성전자주식회사 | 가요성 기판 상에 보호캡을 구비하는 박막 반도체 소자 및 이를 이용하는 전자장치 및 그 제조방법 |
US7952100B2 (en) * | 2006-09-22 | 2011-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5350616B2 (ja) * | 2006-09-22 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101363835B1 (ko) * | 2007-02-05 | 2014-02-17 | 엘지디스플레이 주식회사 | 표시장치 및 이의 제조 방법 |
US7973316B2 (en) * | 2007-03-26 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101819757B1 (ko) | 2009-06-17 | 2018-01-17 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 평판 x-선 영상기에서의 포토다이오드 및 기타 센서 구조물, 및 박막 전자 회로에 기초하여 평판 x-선 영상기에서의 포토다이오드 및 기타 센서 구조물의 토폴로지적 균일성을 향상시키는 방법 |
US9000442B2 (en) * | 2010-01-20 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, flexible light-emitting device, electronic device, and method for manufacturing light-emitting device and flexible-light emitting device |
KR101298234B1 (ko) * | 2010-03-19 | 2013-08-22 | 엘지디스플레이 주식회사 | 터치인식 횡전계형 액정표시장치 및 이의 제조 방법 |
KR101829313B1 (ko) * | 2011-11-03 | 2018-02-20 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
KR101318418B1 (ko) * | 2012-01-30 | 2013-10-15 | 서울대학교산학협력단 | 박막 트랜지스터 및 이의 제조 방법 |
KR101484022B1 (ko) * | 2012-05-31 | 2015-01-19 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 이의 제조 방법 |
CN103681869A (zh) * | 2012-08-31 | 2014-03-26 | 群康科技(深圳)有限公司 | 薄膜晶体管基板与其制造方法、显示器 |
US8999771B2 (en) * | 2012-09-28 | 2015-04-07 | Apple Inc. | Protection layer for halftone process of third metal |
KR20140060776A (ko) * | 2012-11-12 | 2014-05-21 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
KR20140063303A (ko) * | 2012-11-16 | 2014-05-27 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
KR102206412B1 (ko) | 2012-12-27 | 2021-01-22 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치 |
KR102076666B1 (ko) * | 2013-04-11 | 2020-02-12 | 엘지디스플레이 주식회사 | 플렉서블 표시패널 |
JP5964807B2 (ja) * | 2013-08-30 | 2016-08-03 | エルジー ディスプレイ カンパニー リミテッド | フレキシブル有機電界発光装置及びその製造方法 |
KR102223650B1 (ko) | 2013-08-30 | 2021-03-05 | 엘지디스플레이 주식회사 | 전계 발광 표시 장치 및 그 제조방법 |
CN203503661U (zh) | 2013-09-24 | 2014-03-26 | 京东方科技集团股份有限公司 | 柔性显示基板、柔性显示装置 |
CN103500756A (zh) * | 2013-10-22 | 2014-01-08 | 深圳市华星光电技术有限公司 | 有机电致发光器件及其制作方法 |
CN103545320B (zh) * | 2013-11-11 | 2015-11-25 | 京东方科技集团股份有限公司 | 显示基板和含有该显示基板的柔性显示装置 |
KR102107008B1 (ko) * | 2013-12-16 | 2020-05-29 | 삼성디스플레이 주식회사 | 유기 발광 표시장치 및 그의 제조방법 |
CN104282696B (zh) * | 2014-10-22 | 2018-07-13 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104332478A (zh) * | 2014-11-17 | 2015-02-04 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104600081A (zh) * | 2014-12-31 | 2015-05-06 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板、显示装置 |
CN104795403B (zh) * | 2015-04-16 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种柔性基板及其制作方法、显示装置 |
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CN107134496A (zh) | 2017-09-05 |
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EP3425677A1 (en) | 2019-01-09 |
TWI673866B (zh) | 2019-10-01 |
KR102155434B1 (ko) | 2020-09-11 |
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