TWI662208B - 晶圓處理裝置及用於晶圓處理裝置的密封環 - Google Patents
晶圓處理裝置及用於晶圓處理裝置的密封環 Download PDFInfo
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Abstract
本發明涉及用於附接到晶圓處理裝置的蓋環的密封環,其具有環形載體與可釋放地附接到載體的密封唇。本發明還涉及晶圓處理裝置,其具有用於晶圓的接收件、佈置在接收件上的蓋環、以及前述類型的密封環,晶圓通過所述密封環可以密封在接收件上。最終地,本發明涉及用於通過以下步驟製造密封環的方法:初始地設置環形載體,此環形載體在其上側上設有凹槽以及從上側徑向向內地傾斜的支承表面。此外提供設有凸緣的密封唇,其中在密封唇的初始狀態中的凸緣的直徑小於凹槽的直徑。然後,密封唇適配在凹槽中使得其沿著支承表面延伸並且其自由端延伸超過載體的下側。
Description
本發明涉及用於附接到晶圓處理裝置的蓋環的密封環。本發明還涉及晶圓處理裝置,其具有用於晶圓的接收件、佈置在接收件上的蓋環、以及密封環。最後,本發明涉及用於製造密封環的方法。
為了處理晶圓,已知其中可以通過液體處理晶圓的處理裝置。由於此處理,可以如此改變或處理晶圓,或者可以利用液體來清洗晶圓的表面。
當已經結束處理步驟時,然後必須移除應用於處理晶圓的液體。為此目的,接收件可以與晶圓一起旋轉,使得液體可以在離心力的作用下經由蓋環排放到外部。
利用真空以便將晶圓固定在晶圓處理裝置中。此外,提供蓋環,此蓋環通過密封件與晶圓的邊緣區域接合或者與晶圓臨時地固定在其上的部件(例如在載體膜上,此載體膜繼而由框架保持)接合。為了將蓋環固定
到晶圓或載體膜,在蓋環與接收件之間設置真空室,以便當將真空施加到真空室時,可以產生壓緊力。
本發明的目的是確保晶圓與蓋環之間的可靠密封,以使特別地沒有任何液體能進入真空室,或者進入將不被處理的晶圓的區域,或者進入其中容納載體膜的框架的區域。
根據本發明實現了此目的,其中,提供附接到晶圓處理裝置的蓋環的密封環,此密封環具有環形載體與可釋放地附接到載體的密封唇。為了實現上述目的,提供了晶圓處理裝置,此晶圓處理裝置具有用於晶圓的接收件、佈置在接收件上的蓋環、以及前述類型的密封環,晶圓通過此密封環可以密封在接收件上。最終地,為了實現上述目的,提供了用於製造密封環的方法,包括以下步驟:初始地設置環形載體,此環形載體在其上側上設有凹槽以及從上側徑向向內地傾斜的支承表面。此外,提供設有凸緣的密封唇,其中,在密封唇的初始狀態中的凸緣並且優選地全部密封唇的直徑小於凹槽的直徑或者環形載體的直徑。密封唇適配在凹槽中,使得其沿著載體的支承表面延伸並且其自由端延伸超過載體的下側。
本發明以使用包括載體與密封唇的兩部分密封件以便在蓋環與晶圓之間提供密封的原理為基礎。載體確保密封唇被橫跨大區域支撐使得其具有期望的形狀。另
一個優點在於密封唇是可替換的事實,由此如果其磨損或者適於不同應用的話,便可以以小工作量替換它。
優選地,配置密封唇適配在載體中的凹槽中。這在載體與密封唇之間形成了有效的密封。
優選地,密封唇在徑向向外放置的側面上設有凸緣,所述凸緣適配在凹槽中。尤其當凸緣具有略微小於凹槽的直徑的直徑時,凸緣允許密封唇以自保持方式附接到載體。
優選地,配置密封唇從凹槽開始延伸越過載體的上側的一部分以及越過錐形支承表面,直到其自由端突出超過載體的下側。在此實施方式中,通過其彈性偏壓力將密封件的自由端施加到晶圓或載體膜的表面,從而密封件在此位置可靠地提供密封。此密封件不是機械地壓緊晶圓或載體膜,而是僅通過由夾緊產生的偏壓而壓緊在晶圓上,從而不期望的高接觸力不能發生。
優選地,配置載體的支承表面與密封唇之間的空間通過通道通氣到在密封唇外側的載體的上側上的點。通道確保不管密封唇與晶圓或載體膜之間的接觸,在密封件“後面”經過的液體也可以從那裡可靠地排放。
根據本發明的一個實施方式,配置載體設有可以抵靠蓋環放置的密封件。密封件確保晶圓處理裝置的環形載體與蓋環之間的可靠密封並且由此允許形成真空室。
優選地,配置蓋環設有排放通道,此排放通
道通向用於蓋環上的密封環的支承表面。排放通道允許通過載體的支承表面與密封唇之間的通道排放的液體的部分排放。
優選地,配置載體螺紋固定到蓋環。這允許通過小工作量從蓋環拆除密封件以便例如替換密封唇。
根據本發明的優選實施方式,配置密封唇在安裝在載體上以後或者甚至在安裝在蓋環上以後被切割至適當尺寸。這允許在裝配以後密封唇的全部公差引起的尺寸變化被“切除”,使得特別是與晶圓相關的密封唇的邊緣極其精確地符合規格。另一個優點在於這樣的事實,在不需要為此製造新的、昂貴鑄造模具的情況下,可以通過切割處理以低工作量定制密封唇。
優選地,配置密封唇的自由端被切割,使得背離載體的密封唇的端面相對於載體的上側垂直地延伸或者作為朝向頂部加寬的圓錐延伸。當密封唇抵靠晶圓放置時,這形成環形接觸區域,此環形接觸區域具有小的寬度並且極其精確地確定。此外,當密封唇抵靠晶圓放置時,端面略微地變形,使得液體可以在離心力的作用下經由密封唇的端面有效地向外流動。
10‧‧‧晶圓處理裝置
12‧‧‧接收件
14‧‧‧晶圓
16‧‧‧蓋環
18‧‧‧真空室
20‧‧‧計量設備
22‧‧‧殼體
24‧‧‧密封環
30‧‧‧載體膜
32‧‧‧框架
34‧‧‧襯墊
36‧‧‧密封插入件
40‧‧‧載體
42‧‧‧密封唇
44‧‧‧螺釘
46‧‧‧覆蓋件
48‧‧‧密封件
50‧‧‧凹槽
52‧‧‧凸緣
54‧‧‧支承表面
56‧‧‧壓緊肋
60‧‧‧通道
62‧‧‧排放通道
64‧‧‧內置端面(端壁、端面)
66‧‧‧出口
通過在附圖中描述的實施方式的輔助將在下文描述本發明,在附圖中:圖1示意性示出了晶圓處理裝置;
圖2示出了圖1的細節X的放大視圖;圖3示出了在與圖2的視圖相比稍微偏移的截面中的圖1的細節X;圖4a至圖4c示意性示出了當製造密封環時的不同步驟;圖5示意性示出了密封唇與晶圓之間的接觸;圖6示出了第二密封階段的液體路徑的示意圖;以及圖7示意性示出了施加在蓋環16與接收件12之間的真空的有效區域。
圖1示意性示出了其中可以通過液體來處理晶圓的晶圓處理裝置10。
晶圓處理裝置10包括其中可以佈置晶圓14的接收件12。晶圓自身或晶圓14固定在其上的載體膜(“帶”)可以通過示意性示出的蓋環16密封到接收件12。可以通過將真空施加到真空室18抵靠晶圓或者抵靠載體膜載入蓋環16。
可以通過在此附圖中示意性示出的計量設備20將液體施加到晶圓14。例如,此液體可以用於化學地或物理地處理晶圓的表面。此液體還可以用於清洗晶圓的表面。
為了能夠隨後地從晶圓14移除液體,可以旋轉接收件12(由箭頭R指示),使得液體在離心力的作用下向外地分離。然後將它收集在示意性指示的殼體22中。
為了防止液體進入蓋環16下方的區域,設置在晶圓14的表面與蓋環16之間提供密封的密封環24。
在下文中將在圖2和圖3的輔助下詳細地說明晶圓14的表面或晶圓14佈置在其上的載體膜的表面與蓋環16之間的密封。
晶圓(在圖2和圖3中不可見)附接到載體膜30(此外稱作為“帶”)以用於改進的操作能力,所述載體膜緊密地保持在框架32中。載體膜30佈置為使得其表面的大部分在其中設有環形密封插入件36的襯墊34上。
提供包括載體40與附接至其的密封唇42的密封環24,以便提供在晶圓14與蓋環16之間的密封,或者更準確地在支撐晶圓14的載體膜30與蓋環16之間的密封。
載體40通過多個螺釘44可釋放地附接到蓋環16。螺釘44的每個螺釘頭都通過覆蓋件46覆蓋。這防止了液體保留在螺釘頭的區域中。
載體40在其上側、即抵靠蓋環16放置的側面上設有密封件48,其中,所述密封件可以以與O形環類似的方式設計並且在載體40與蓋環16之間提供密封。
載體40設有徑向地在密封件48內側的周向
凹槽50(此外參見圖4a),密封唇42可釋放地插入到凹槽中。為此目的,密封唇42在其徑向外置邊緣上設有凸緣52。
載體40設有徑向地在凹槽50內側的錐形支承表面54,密封唇抵靠該支承表面佈置。密封唇42由此從載體的凹槽50沿著支承表面54徑向向內地延伸,直到其朝向晶圓14或載體膜30突出超過載體40的下側。
載體40的下側設有壓緊肋56,此壓緊肋與密封插入件36相對佈置並且抵靠密封插入件36壓緊載體膜30,以使密封件設置在此位置處。
載體40設有在密封唇42下方延伸到凹槽50中的多個通道60(參見圖3和圖4a)。通道60以狹槽的方式向下地引導到直接在壓緊肋56的前面(參見圖3)。
通道60用於將在密封唇42下方進入密封唇42與壓緊肋56之間的空間的液體轉移到凹槽50中。此液體經由沿著(至少近似)徑向方向形成在蓋環16中的排放通道62(參見圖3)從凹槽50排放。
憑藉單獨製造的密封唇42(參見圖4a)與載體40的凹槽50接合的事實形成密封環24。密封唇42的凸緣52尺寸設計為使得其具有比凹槽50小的直徑。密封唇42由此在彈性基礎情形中接合在載體40中(參見圖4b中示出的狀態)。
在下一個步驟中,切割密封唇42的徑向內置
邊緣(參見示意性指示部分S)使得在圖4c中示出的密封唇42的輪廓保持在徑向內置邊緣處。此輪廓特徵在於內置端面64相對於載體40的上側以及下側或者在頂部處的錐形開口大致垂直地延伸。
不考慮內置端面64的輪廓,在密封唇42附接到載體40以後,通過切割密封唇42可以確保特別高的尺寸準確性。當這樣製造密封唇42時發生的公差相對高。通過在完整安裝狀態中切割密封唇,由製造導致的全部誤差被“簡單地切掉”。此外,可以從同一個密封唇毛坯切割與客戶特定要求相應的不同的密封唇42,而不需要每次提供用於製造適當的密封唇的新的模具。
在操作中,通過將真空施加到真空室18抵靠晶圓或者抵靠載體膜30載入蓋環16。通過使其徑向內置端在晶圓上或者在載體膜30上而施加密封唇42。密封唇42略微地彈性地變形,以在載體膜30上產生期望的壓緊力。
由於密封唇42的內置邊緣的特定切割,產生直線接觸(理論上),導致相對高的接觸力。此外,在切割以後相對於載體40的上側垂直地定向或者以向上加寬錐形的方式定向的密封唇的端壁64略微地變形,從而形成向外加寬的錐形。
密封唇42是蓋環16與晶圓14或載體膜30之間(以及由此在載體40與載體膜30之間)的第一密封件。
通過壓緊肋56在蓋環16與晶圓14或載體膜30之間形成進一步接觸。這在密封插入件36的區域中按壓載體膜30。密封插入件36的彈性防止壓緊肋56在載體膜30上施加過高的夾緊力。
壓緊肋56是蓋環16與晶圓14或載體膜30之間的第二密封件。
當在晶圓處理裝置的操作過程中從晶圓14移除用過的液體時,旋轉接收件12。例如,高達1500rpm的旋轉速度是適當的。位於在晶圓或載體膜30上的液體在離心力的作用下向外地流動,使得其經由端面64、密封唇42與連接在其上方的蓋環16的部分徑向向外地排放。然後液體可以通過出口66(參見圖2)離開蓋環16。
如果液體在密封唇42與載體膜30之間的接觸位置的區域中徑向地經過密封唇42下方,那麼液體進入密封唇與壓力肋56之間的空間。液體從此空間通過通道60和凹槽50排放到排放通道62。這是輔助性的,其在於由於排放通道62的徑向定向,在此位置處以高於大約500rpm的旋轉速度產生真空。
通道60確保沒有任何在長時間接觸的情形中可能能夠腐蝕載體膜30的液體保留在壓緊肋56的前方。此外,確保沒有任何液體可以進入其中佈置框架32的區域。
所描述的兩階段密封系統可靠地防止了液體
進入密封環24外部的區域。在第一密封階段中,大部分液體通過密封唇42轉移。可以在密封唇42“後面”經過的液體然後積聚在第二密封件(壓緊肋56)處,液體從其通過通道60排放。這在圖6中可以清楚地看到,其中在第一密封件後面經過的液體定位的區域標記以十字叉。
在圖7中,以交叉陰影線標記全部真空室18,即可以用於在蓋環16與接收件12之間產生期望的壓緊力的區域。可以看出真空室18在從接收件12的外周到壓緊肋56的極大的表面上方延伸。由於兩階段密封系統,可靠地防止了液體進入真空室18。
Claims (9)
- 一種用於附接到晶圓處理裝置(10)之蓋環(16)的密封環(24),其具有:環形的載體(40),具有凹槽(50)和圓形開口;及密封唇(42),可釋放地附接到該載體(40);其中,該密封唇(42)適配於該載體(40)中的該凹槽(50)中;且其中該密封唇(42)從該凹槽(50)延伸越過該載體(40)之上側的一部分以及越過錐形的支承表面(54)並進入該圓形開口,直到該密封唇(42)的自由端突出超過該載體(40)之下側。
- 如申請專利範圍第1項所述的密封環(24),其中,該密封唇(42)在徑向向外地放置的側面上設有凸緣(52),該凸緣適配於該凹槽(50)中。
- 如申請專利範圍第1項所述的密封環(24),其中,該載體(40)的該支承表面(54)與該密封唇(42)之間的空間藉由通道(60)通氣至在該密封唇(42)外側的該載體(40)的上側上的點。
- 如申請專利範圍第1項所述的密封環(24),其中,該載體(40)設有壓緊肋(56),徑向位於該密封唇(42)的自由端外側。
- 如申請專利範圍第1項所述的密封環(24),其中,該載體(40)設有密封件(48),能夠抵靠該蓋環(16)。
- 一種用於附接到晶圓處理裝置(10)之蓋環(16)的密封環(24),其具有:環形的載體(40),具有凹槽(50)和圓形開口;及密封唇(42),可釋放地附接到該載體(40);其中,該載體(40)的支承表面與該密封唇(42)之間的空間藉由通道(60)通氣至在該密封唇(42)外側的該載體(40)的上側上的點。
- 一種晶圓處理裝置(10),其具有用於晶圓(14)的接收件(12),該晶圓處理裝置(10)具有:環形的載體(40),具有凹槽(50)和圓形開口;及密封唇(42),可釋放地附接到該載體(40);其中,該密封唇(42)適於密封該接收件(12)上的該晶圓(14);且其中該蓋環(16)設有排放通道(62),該排放通道(62)通向該蓋環(16)上的用於該密封環(24)的支承表面。
- 如申請專利範圍第7項所述的晶圓處理裝置(10),其中,該載體(40)以螺紋固定到該蓋環(16)。
- 如申請專利範圍第7項所述的晶圓處理裝置(10),其中,真空室(18)被密封在該蓋環(16)、該接收件(12)與該載體(40)之間。
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2015
- 2015-04-13 NL NL2014625A patent/NL2014625B1/en active
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2016
- 2016-03-01 JP JP2016038695A patent/JP6723765B2/ja active Active
- 2016-03-02 TW TW105106325A patent/TWI662208B/zh active
- 2016-03-09 US US15/064,716 patent/US10295063B2/en active Active
- 2016-03-22 CN CN201610166588.7A patent/CN106057705B/zh active Active
- 2016-04-04 KR KR1020160040960A patent/KR102100535B1/ko active IP Right Grant
- 2016-04-06 DE DE102016106289.8A patent/DE102016106289B4/de active Active
- 2016-04-12 AT ATA50309/2016A patent/AT517055B1/de active
Patent Citations (3)
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US20030008602A1 (en) * | 2001-03-12 | 2003-01-09 | Jalal Ashjaee | Method and apparatus of sealing wafer backside for full-face electrochemical plating |
US7901551B2 (en) * | 2002-06-21 | 2011-03-08 | Ebara Corporation | Substrate holder and plating apparatus |
US20060118515A1 (en) * | 2004-08-20 | 2006-06-08 | Semitool, Inc. | Process For Thinning A Semiconductor Workpiece |
Also Published As
Publication number | Publication date |
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JP6723765B2 (ja) | 2020-07-15 |
DE102016106289A1 (de) | 2016-10-13 |
JP2016200277A (ja) | 2016-12-01 |
CN106057705B (zh) | 2021-04-30 |
NL2014625B1 (en) | 2017-01-06 |
TW201708748A (zh) | 2017-03-01 |
KR102100535B1 (ko) | 2020-04-14 |
KR20160122067A (ko) | 2016-10-21 |
DE102016106289B4 (de) | 2020-03-19 |
US10295063B2 (en) | 2019-05-21 |
AT517055B1 (de) | 2019-03-15 |
US20160300751A1 (en) | 2016-10-13 |
AT517055A3 (de) | 2018-07-15 |
NL2014625A (en) | 2016-10-14 |
CN106057705A (zh) | 2016-10-26 |
AT517055A2 (de) | 2016-10-15 |
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