CN106057705B - 晶片处理设备以及用于晶片处理设备的密封环 - Google Patents

晶片处理设备以及用于晶片处理设备的密封环 Download PDF

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CN106057705B
CN106057705B CN201610166588.7A CN201610166588A CN106057705B CN 106057705 B CN106057705 B CN 106057705B CN 201610166588 A CN201610166588 A CN 201610166588A CN 106057705 B CN106057705 B CN 106057705B
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CN106057705A (zh
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迪特尔·艾伯特
迈克尔·布劳恩
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Suess Microtec Lithography GmbH
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Abstract

本发明涉及用于附接到晶片处理设备的盖环的密封环，其具有环形载体与可释放地附接到载体的密封唇。本发明还涉及晶片处理设备，其具有用于晶片的接收件、布置在接收件上的盖环、以及前述类型的密封环，晶片通过所述密封环可以密封在接收件上。最终地，本发明涉及用于通过以下步骤制造密封环的方法：初始地设置环形载体，此环形载体在其上侧上设有凹槽以及从上侧径向向内地倾斜的支承表面。此外提供设有凸缘的密封唇，其中在密封唇的初始状态中的凸缘的直径小于凹槽的直径。然后，密封唇适配在凹槽中使得其沿着支承表面延伸并且其自由端延伸超过载体的下侧。

Description

晶片处理设备以及用于晶片处理设备的密封环
技术领域
本发明涉及用于附接到晶片处理设备的盖环的密封环。本发明还涉及晶片处理设备，其具有用于晶片的接收件、布置在接收件上的盖环、以及密封环。最后，本发明涉及用于制造密封环的方法。
背景技术
为了处理晶片，已知其中可以通过液体处理晶片的处理设备。由于此处理，可以如此改变或处理晶片，或者可以利用液体来清洗晶片的表面。
当已经结束处理步骤时，然后必须移除应用于处理晶片的液体。为此目的，接收件可以与晶片一起旋转，使得液体可以在离心力的作用下经由盖环排放到外部。
利用真空以便将晶片固定在晶片处理设备中。此外，提供盖环，此盖环通过密封件与晶片的边缘区域接合或者与晶片临时地固定在其上的部件(例如在载体膜上，此载体膜继而由框架保持)接合。为了将盖环固定到晶片或载体膜，在盖环与接收件之间设置真空室，以便当将真空施加到真空室时，可以产生压紧力。
发明内容
本发明的目的是确保晶片与盖环之间的可靠密封，以使特别地没有任何液体能进入真空室，或者进入将不被处理的晶片的区域，或者进入其中容纳载体膜的框架的区域。
根据本发明实现了此目的，其中，提供附接到晶片处理设备的盖环的密封环，此密封环具有环形载体与可释放地附接到载体的密封唇。为了实现上述目的，提供了晶片处理设备，此晶片处理设备具有用于晶片的接收件、布置在接收件上的盖环、以及前述类型的密封环，晶片通过此密封环可以密封在接收件上。最终地，为了实现上述目的，提供了用于制造密封环的方法，包括以下步骤：初始地设置环形载体，此环形载体在其上侧上设有凹槽以及从上侧径向向内地倾斜的支承表面。此外，提供设有凸缘的密封唇，其中，在密封唇的初始状态中的凸缘并且优选地全部密封唇的直径小于凹槽的直径或者环形载体的直径。密封唇适配在凹槽中，使得其沿着载体的支承表面延伸并且其自由端延伸超过载体的下侧。
本发明以使用包括载体与密封唇的两部分密封件以便在盖环与晶片之间提供密封的原理为基础。载体确保密封唇被横跨大区域支撑使得其具有期望的形状。另一个优点在于密封唇是可替换的事实，由此如果其磨损或者适于不同应用的话，便可以以小工作量替换它。
优选地，配置密封唇适配在载体中的凹槽中。这在载体与密封唇之间形成了有效的密封。
优选地，密封唇在径向向外放置的侧面上设有凸缘，所述凸缘适配在凹槽中。尤其当凸缘具有略微小于凹槽的直径的直径时，凸缘允许密封唇以自保持方式附接到载体。
优选地，配置密封唇从凹槽开始延伸越过载体的上侧的一部分以及越过锥形支承表面，直到其自由端突出超过载体的下侧。在此实施方式中，通过其弹性偏压力将密封件的自由端施加到晶片或载体膜的表面，从而密封件在此位置可靠地提供密封。此密封件不是机械地压紧晶片或载体膜，而是仅通过由夹紧产生的偏压而压紧在晶片上，从而不期望的高接触力不能发生。
优选地，配置载体的支承表面与密封唇之间的空间通过通道通气到在密封唇外侧的载体的上侧上的点。通道确保不管密封唇与晶片或载体膜之间的接触，在密封件“后面”经过的液体也可以从那里可靠地排放。
根据本发明的一个实施方式，配置载体设有可以抵靠盖环放置的密封件。密封件确保晶片处理设备的环形载体与盖环之间的可靠密封并且由此允许形成真空室。
优选地，配置盖环设有排放通道，此排放通道通向用于盖环上的密封环的支承表面。排放通道允许通过载体的支承表面与密封唇之间的通道排放的液体的部分排放。
优选地，配置载体螺纹固定到盖环。这允许通过小工作量从盖环拆除密封件以便例如替换密封唇。
根据本发明的优选实施方式，配置密封唇在安装在载体上以后或者甚至在安装在盖环上以后被切割至适当尺寸。这允许在装配以后密封唇的全部公差引起的尺寸变化被“切除”，使得特别是与晶片相关的密封唇的边缘极其精确地符合规格。另一个优点在于这样的事实，在不需要为此制造新的、昂贵铸造模具的情况下，可以通过切割处理以低工作量定制密封唇。
优选地，配置密封唇的自由端被切割，使得背离载体的密封唇的端面相对于载体的上侧垂直地延伸或者作为朝向顶部加宽的圆锥延伸。当密封唇抵靠晶片放置时，这形成环形接触区域，此环形接触区域具有小的宽度并且极其精确地确定。此外，当密封唇抵靠晶片放置时，端面略微地变形，使得液体可以在离心力的作用下经由密封唇的端面有效地向外流动。
附图说明
通过在附图中描述的实施方式的辅助将在下文描述本发明，在附图中：
图1示意性示出了晶片处理设备；
图2示出了图1的细节X的放大视图；
图3示出了在与图2的视图相比稍微偏移的截面中的图1的细节X；
图4a至图4c示意性示出了当制造密封环时的不同步骤；
图5示意性示出了密封唇与晶片之间的接触；
图6示出了第二密封阶段的液体路径的示意图；以及
图7示意性示出了施加在盖环16与接收件12之间的真空的有效区域。
具体实施方式
图1示意性示出了其中可以通过液体来处理晶片的晶片处理设备10。
晶片处理设备10包括其中可以布置晶片14的接收件12。晶片自身或晶片14固定在其上的载体膜(“带”)可以通过示意性示出的盖环16密封到接收件12。可以通过将真空施加到真空室18抵靠晶片或者抵靠载体膜加载盖环16。
可以通过在此附图中示意性示出的计量设备20将液体施加到晶片14。例如，此液体可以用于化学地或物理地处理晶片的表面。此液体还可以用于清洗晶片的表面。
为了能够随后地从晶片14移除液体，可以旋转接收件12(由箭头R指示)，使得液体在离心力的作用下向外地分离。然后将它收集在示意性指示的壳体22中。
为了防止液体进入盖环16下方的区域，设置在晶片14的表面与盖环16之间提供密封的密封环24。
在下文中将在图2和图3的辅助下详细地说明晶片14的表面或晶片14布置在其上的载体膜的表面与盖环16之间的密封。
晶片(在图2和图3中不可见)附接到载体膜30(此外称作为“带”)以用于改进的操作能力，所述载体膜紧密地保持在框架32中。载体膜30布置为使得其表面的大部分在其中设有环形密封插入件36的衬垫34上。
提供包括载体40与附接至其的密封唇42的密封环24，以便提供在晶片14与盖环16之间的密封，或者更准确地在支撑晶片14的载体膜30与盖环16之间的密封。
载体40通过多个螺钉44可释放地附接到盖环16。螺钉44的每个螺钉头都通过覆盖件46覆盖。这防止了液体保留在螺钉头的区域中。
载体40在其上侧、即抵靠盖环16放置的侧面上设有密封件48，其中，所述密封件可以以与O形环类似的方式设计并且在载体40与盖环16之间提供密封。
载体40设有径向地在密封件48内侧的周向凹槽50(此外参见图4a)，密封唇42可释放地插入到凹槽中。为此目的，密封唇42在其径向外置边缘上设有凸缘52。
载体40设有径向地在凹槽50内侧的锥形支承表面54，密封唇抵靠该支承表面布置。密封唇42由此从载体的凹槽50沿着支承表面54径向向内地延伸，直到其朝向晶片14或载体膜30突出超过载体40的下侧。
载体40的下侧设有压紧肋56，此压紧肋与密封插入件36相对布置并且抵靠密封插入件36压紧载体膜30，以使密封件设置在此位置处。
载体40设有在密封唇42下方延伸到凹槽50中的多个通道60(参见图3和图4a)。通道60以狭槽的方式向下地引导到直接在压紧肋56的前面(参见图3)。
通道60用于将在密封唇42下方进入密封唇42与压紧肋56之间的空间的液体转移到凹槽50中。此液体经由沿着(至少近似)径向方向形成在盖环16中的排放通道62(参见图3)从凹槽50排放。
凭借单独制造的密封唇42(参见图4a)与载体40的凹槽50接合的事实形成密封环24。密封唇42的凸缘52尺寸设计为使得其具有比凹槽50小的直径。密封唇42由此在弹性基础情形中接合在载体40中(参见图4b中示出的状态)。
在下一个步骤中，切割密封唇42的径向内置边缘(参见示意性指示部分S)使得在图4c中示出的密封唇42的轮廓保持在径向内置边缘处。此轮廓特征在于内置端面64相对于载体40的上侧以及下侧或者在顶部处的锥形开口大致垂直地延伸。
不考虑内置端面64的轮廓，在密封唇42附接到载体40以后，通过切割密封唇42可以确保特别高的尺寸准确性。当这样制造密封唇42时发生的公差相对高。通过在完全安装状态中切割密封唇，由制造导致的全部误差被“简单地切掉”。此外，可以从同一个密封唇毛坯切割与客户特定要求相应的不同的密封唇42，而不需要每次提供用于制造适当的密封唇的新的模具。
在操作中，通过将真空施加到真空室18抵靠晶片或者抵靠载体膜30加载盖环16。通过使其径向内置端在晶片上或者在载体膜30上而施加密封唇42。密封唇42略微地弹性地变形，以在载体膜30上产生期望的压紧力。
由于密封唇42的内置边缘的特定切割，产生直线接触(理论上)，导致相对高的接触力。此外，在切割以后相对于载体40的上侧垂直地定向或者以向上加宽锥形的方式定向的密封唇的端壁64略微地变形，从而形成向外加宽的锥形。
密封唇42是盖环16与晶片14或载体膜30之间(以及由此在载体40与载体膜30之间)的第一密封件。
通过压紧肋56在盖环16与晶片14或载体膜30之间形成进一步接触。这在密封插入件36的区域中按压载体膜30。密封插入件36的弹性防止压紧肋56在载体膜30上施加过高的夹紧力。
压紧肋56是盖环16与晶片14或载体膜30之间的第二密封件。
当在晶片处理设备的操作过程中从晶片14移除用过的液体时，旋转接收件12。例如，高达1500rpm的旋转速度是适当的。位于在晶片或载体膜30上的液体在离心力的作用下向外地流动，使得其经由端面64、密封唇42与连接在其上方的盖环16的部分径向向外地排放。然后液体可以通过出口66(参见图2)离开盖环16。
如果液体在密封唇42与载体膜30之间的接触位置的区域中径向地经过密封唇42下方，那么液体进入密封唇与压力肋56之间的空间。液体从此空间通过通道60和凹槽50排放到排放通道62。这是辅助性的，其在于由于排放通道62的径向定向，在此位置处以高于大约500rpm的旋转速度产生真空。
通道60确保没有任何在长时间接触的情形中可能能够腐蚀载体膜30的液体保留在压紧肋56的前方。此外，确保没有任何液体可以进入其中布置框架32的区域。
所描述的两阶段密封系统可靠地防止了液体进入密封环24外部的区域。在第一密封阶段中，大部分液体通过密封唇42转移。可以在密封唇42“后面”经过的液体然后积聚在第二密封件(压紧肋56)处，液体从其通过通道60排放。这在图6中可以清楚地看到，其中在第一密封件后面经过的液体定位的区域标记以十字叉。
在图7中，以交叉阴影线标记全部真空室18，即可以用于在盖环16与接收件12之间产生期望的压紧力的区域。可以看出真空室18在从接收件12的外周到压紧肋56的极大的表面上方延伸。由于两阶段密封系统，可靠地防止了液体进入真空室18。

Claims (13)

1.一种用于附接到晶片处理设备(10)的盖环(16)的密封环(24)，其具有环形载体(40)与可释放地附接到所述载体(40)的密封唇(42)，其特征在于，所述密封唇(42)适配在所述载体(40)中的凹槽(50)中，并且所述密封唇(42)从所述凹槽(50)开始延伸越过所述载体(40)的上侧的一部分以及越过锥形支承表面(54)，直到其自由端突出超过所述载体(40)的下侧。
2.根据权利要求1所述的密封环(24)，其特征在于，所述密封唇(42)在径向向外地放置的侧面上设有凸缘(52)，所述凸缘适配在所述凹槽(50)中。
3.根据权利要求1所述的密封环(24)，其特征在于，所述载体(40)的所述支承表面与所述密封唇(42)之间的空间通过通道(60)通气到在所述密封唇(42)外侧的所述载体(40)的上侧上的点。
4.根据权利要求1所述的密封环(24)，其特征在于，所述载体(40)设有径向位于所述密封唇(42)的所述自由端外侧的压紧肋(56)。
5.根据权利要求1所述的密封环(24)，其特征在于，所述载体(40)设有能够抵靠所述盖环(16)放置的密封件(48)。
6.一种晶片处理设备(10)，其具有用于晶片(14)的接收件(12)、具有布置在所述接收件(12)上的盖环(16)、并且具有上述权利要求中任一项所述的密封环(24)，晶片(14)能够通过密封环(24)密封在所述接收件(12)上。
7.根据权利要求6所述的晶片处理设备(10)，其特征在于，所述盖环(16)设有排放通道(62)，所述排放通道通向所述盖环(16)上的用于所述密封环(24)的支承表面。
8.根据权利要求6所述的晶片处理设备(10)，其特征在于，所述载体(40)螺纹固定到所述盖环(16)。
9.根据权利要求6所述的晶片处理设备(10)，其特征在于，真空室(18)密封在所述盖环(16)、所述接收件(12)与所述载体(40)之间。
10.一种用于通过以下步骤制造密封环(24)的方法：
-提供环形载体(40)，所述载体在其上侧上设有凹槽(50)以及从所述上侧径向向内地倾斜的支承表面；
-提供设有凸缘(52)的密封唇(42)，其中，在密封唇(42)的初始状态中的所述凸缘(52)的直径小于所述凹槽(50)的直径；
-将所述密封唇(42)适配在所述凹槽(50)中，使得其沿着所述支承表面延伸并且其自由端延伸超过所述载体(40)的下侧。
11.根据权利要求10所述的方法，其特征在于，在密封唇(42)安装在所述载体上以后，所述密封唇(42)被切成适当尺寸。
12.根据权利要求11所述的方法，其特征在于，所述密封唇(42)的所述自由端被切割，使得背离所述载体(40)的所述密封唇(42)的端面(64)相对于所述载体(40)的所述上侧垂直地或成圆锥形地延伸。
13.根据权利要求11所述的方法，其中，所述密封环(24)安装到根据权利要求6所述的晶片处理设备。
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2014625B1 (en) * 2015-04-13 2017-01-06 Suss Microtec Lithography Gmbh Wafer treating device and sealing ring for a wafer treating device.
JP6611565B2 (ja) * 2015-11-02 2019-11-27 東京エレクトロン株式会社 洗浄装置、剥離システム、洗浄方法、剥離方法、プログラム、および情報記憶媒体
NL2018243B1 (en) * 2017-01-27 2018-08-07 Suss Microtec Lithography Gmbh Suction apparatus for an end effector, end effector for holding substrates and method of producing an end effector
CN110246784B (zh) * 2019-06-19 2021-05-07 西安奕斯伟硅片技术有限公司 一种支撑结构和具有其的热处理装置
CN110552041B (zh) * 2019-09-16 2021-02-19 歌尔股份有限公司 金属材料的表面处理方法
KR20210082294A (ko) * 2019-12-24 2021-07-05 주식회사 제우스 틸팅 제어 장치
KR20220026623A (ko) * 2020-08-25 2022-03-07 주식회사 제우스 기판처리장치 및 기판처리방법
TWI821679B (zh) 2020-08-25 2023-11-11 南韓商杰宜斯科技有限公司 基板處理裝置及基板處理方法
KR20220135184A (ko) 2021-03-26 2022-10-06 주식회사 제우스 기판처리장치 및 이의 제어방법
US20220344194A1 (en) * 2021-04-21 2022-10-27 Zeus Co., Ltd. Wafer cleaning apparatus and method of controlling the same
KR20230025614A (ko) * 2021-08-13 2023-02-22 주식회사 제우스 기판처리방법
KR20230025233A (ko) 2021-08-13 2023-02-21 주식회사 제우스 기판처리방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1221968A (zh) * 1997-12-26 1999-07-07 佳能株式会社 基片的加工设备、支撑设备、加工及制造方法
JP2005225545A (ja) * 2004-02-16 2005-08-25 Miraial Kk シール部材
CN101281858A (zh) * 2002-06-21 2008-10-08 株式会社荏原制作所 基片保持装置和电镀设备
JP2012062570A (ja) * 2010-08-19 2012-03-29 Ebara Corp 基板ホルダ及びめっき装置
CN103579054A (zh) * 2012-08-09 2014-02-12 大日本网屏制造株式会社 基板处理装置以及基板处理方法
CN104364895A (zh) * 2012-06-04 2015-02-18 日立金属株式会社 密封环以及密封环的制造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5421401A (en) * 1994-01-25 1995-06-06 Applied Materials, Inc. Compound clamp ring for semiconductor wafers
JP3377849B2 (ja) * 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用メッキ装置
US5660699A (en) * 1995-02-20 1997-08-26 Kao Corporation Electroplating apparatus
US5948204A (en) * 1996-12-30 1999-09-07 Intel Corporation Wafer carrier ring method and apparatus for chemical-mechanical planarization
JPH11162900A (ja) 1997-11-28 1999-06-18 Dainippon Screen Mfg Co Ltd 基板処理装置
US6248222B1 (en) * 1998-09-08 2001-06-19 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
DE19859467C2 (de) * 1998-12-22 2002-11-28 Steag Micro Tech Gmbh Substrathalter
JP3521819B2 (ja) * 1999-11-15 2004-04-26 株式会社デンソー 半導体ウエハの表面処理装置
US6939206B2 (en) * 2001-03-12 2005-09-06 Asm Nutool, Inc. Method and apparatus of sealing wafer backside for full-face electrochemical plating
JP3588777B2 (ja) * 2002-04-12 2004-11-17 株式会社山本鍍金試験器 電気めっき試験器の陰極カートリッジ
JP4162440B2 (ja) * 2002-07-22 2008-10-08 株式会社荏原製作所 基板ホルダ及びめっき装置
US7288489B2 (en) * 2004-08-20 2007-10-30 Semitool, Inc. Process for thinning a semiconductor workpiece
KR20070048793A (ko) * 2004-08-20 2007-05-09 세미툴 인코포레이티드 반도체 제품
JP4621038B2 (ja) * 2005-02-18 2011-01-26 Ｏｋｉセミコンダクタ株式会社 半導体ウエハの洗浄方法及び半導体ウエハの洗浄装置
JP2006332530A (ja) 2005-05-30 2006-12-07 Nikon Corp 投影光学系、露光装置、及びデバイスの製造方法
KR100673003B1 (ko) 2005-06-03 2007-01-24 삼성전자주식회사 증착 장치
US8608856B2 (en) 2005-09-30 2013-12-17 Tokyo Electron Limited Sealing part and substrate processing apparatus
DE102006000687B4 (de) * 2006-01-03 2010-09-09 Thallner, Erich, Dipl.-Ing. Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers
JP2008021929A (ja) * 2006-07-14 2008-01-31 Tokyo Ohka Kogyo Co Ltd サポートプレート、搬送装置、剥離装置及び剥離方法
JP4829978B2 (ja) * 2006-11-24 2011-12-07 ミライアル株式会社 薄板保管搬送システムおよびそれを用いたレチクルケース
WO2008151095A2 (en) * 2007-05-30 2008-12-11 Blueshift Technologies, Inc. Vacuum substrate storage
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
JP6038503B2 (ja) * 2011-07-01 2016-12-07 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20130306465A1 (en) 2012-05-17 2013-11-21 Applied Materials, Inc. Seal rings in electrochemical processors
JP2015083868A (ja) * 2013-09-19 2015-04-30 内山工業株式会社 環状シール部材
US10978334B2 (en) * 2014-09-02 2021-04-13 Applied Materials, Inc. Sealing structure for workpiece to substrate bonding in a processing chamber
US10184564B2 (en) 2015-02-02 2019-01-22 Bal Seal Engineering, Inc. Seal assemblies and related methods
NL2014625B1 (en) * 2015-04-13 2017-01-06 Suss Microtec Lithography Gmbh Wafer treating device and sealing ring for a wafer treating device.

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1221968A (zh) * 1997-12-26 1999-07-07 佳能株式会社 基片的加工设备、支撑设备、加工及制造方法
CN101281858A (zh) * 2002-06-21 2008-10-08 株式会社荏原制作所 基片保持装置和电镀设备
JP2005225545A (ja) * 2004-02-16 2005-08-25 Miraial Kk シール部材
JP2012062570A (ja) * 2010-08-19 2012-03-29 Ebara Corp 基板ホルダ及びめっき装置
CN104364895A (zh) * 2012-06-04 2015-02-18 日立金属株式会社 密封环以及密封环的制造方法
CN103579054A (zh) * 2012-08-09 2014-02-12 大日本网屏制造株式会社 基板处理装置以及基板处理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
唇形密封圈在匀胶设备的应用;周湘杰，盛晓东;《真空》;20030325(第1期);全文 *

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AT517055A2 (de) 2016-10-15
US10295063B2 (en) 2019-05-21
DE102016106289B4 (de) 2020-03-19

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