TWI659123B - 補集裝置及基板處理裝置 - Google Patents

補集裝置及基板處理裝置 Download PDF

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Publication number
TWI659123B
TWI659123B TW103135921A TW103135921A TWI659123B TW I659123 B TWI659123 B TW I659123B TW 103135921 A TW103135921 A TW 103135921A TW 103135921 A TW103135921 A TW 103135921A TW I659123 B TWI659123 B TW I659123B
Authority
TW
Taiwan
Prior art keywords
upstream
downstream
capture
cylindrical member
cylindrical
Prior art date
Application number
TW103135921A
Other languages
English (en)
Chinese (zh)
Other versions
TW201527581A (zh
Inventor
Atsushi Kobayashi
小林敦
Shinji Akiyama
山伸司
Shuuichi Andou
安藤修一
Katsuhiro Kosuga
小菅一弘
Takahiro Yamamoto
山本隆寬
Original Assignee
Tokyo Electron Limited
日商東京威力科創股份有限公司
Tohoku Seimitsu Co., Ltd
日商東北精密股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, 日商東京威力科創股份有限公司, Tohoku Seimitsu Co., Ltd, 日商東北精密股份有限公司 filed Critical Tokyo Electron Limited
Publication of TW201527581A publication Critical patent/TW201527581A/zh
Application granted granted Critical
Publication of TWI659123B publication Critical patent/TWI659123B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/56—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with multiple filtering elements, characterised by their mutual disposition
    • B01D46/62—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with multiple filtering elements, characterised by their mutual disposition connected in series
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
TW103135921A 2013-10-21 2014-10-17 補集裝置及基板處理裝置 TWI659123B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013218718A JP6289859B2 (ja) 2013-10-21 2013-10-21 トラップ装置及び基板処理装置
JP2013-218718 2013-10-21

Publications (2)

Publication Number Publication Date
TW201527581A TW201527581A (zh) 2015-07-16
TWI659123B true TWI659123B (zh) 2019-05-11

Family

ID=52825133

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103135921A TWI659123B (zh) 2013-10-21 2014-10-17 補集裝置及基板處理裝置

Country Status (4)

Country Link
US (1) US20150107771A1 (enExample)
JP (1) JP6289859B2 (enExample)
KR (1) KR102301024B1 (enExample)
TW (1) TWI659123B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191812B (zh) * 2015-05-05 2019-01-22 中微半导体设备(上海)有限公司 化学气相沉积装置及清洁其排气口的方法
DE102015219925A1 (de) * 2015-10-14 2017-04-20 Wacker Chemie Ag Reaktor zur Abscheidung von polykristallinem Silicium
JP6628653B2 (ja) * 2016-03-17 2020-01-15 東京エレクトロン株式会社 トラップ装置及びこれを用いた排気系、並びに基板処理装置
JP6642259B2 (ja) * 2016-05-13 2020-02-05 株式会社Ihi トラップ装置
CN109097755A (zh) * 2017-06-20 2018-12-28 华邦电子股份有限公司 工艺腔室气体检测系统及其操作方法
KR101957054B1 (ko) * 2017-10-31 2019-03-11 안호상 승화정제기용 ｌｎ２ 트랩 장치
KR101957055B1 (ko) * 2017-10-31 2019-03-11 안호상 승화정제기
KR102036273B1 (ko) * 2017-12-27 2019-10-24 주식회사 미래보 반도체 공정 부산물 포집장치
KR102209205B1 (ko) * 2019-08-21 2021-02-01 주식회사 미래보 반도체 공정용 유로방향 전환식 반응부산물 포집장치
US11583793B2 (en) 2019-10-08 2023-02-21 Utica Leaseco, Llc Gas trap system having a conical inlet condensation region
JP2021186785A (ja) 2020-06-03 2021-12-13 東京エレクトロン株式会社 トラップ装置及び基板処理装置
CN113990730B (zh) * 2020-07-27 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置及其中的气流调节盖和气流调节方法
US12060637B2 (en) 2020-12-01 2024-08-13 Applied Materials, Inc. Actively cooled foreline trap to reduce throttle valve drift

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460975B (en) * 1999-03-11 2001-10-21 Tokyo Electron Ltd Treating device, vacuum exhaust system for treating device, evacuating CVD device, vacuum exhaust system for evacuating CVD device, and trapping device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944331B1 (enExample) 1971-05-31 1974-11-27
US4487618A (en) * 1982-08-19 1984-12-11 La-Man Corporation Airline vapor trap
JP2544655Y2 (ja) * 1990-11-30 1997-08-20 アマノ株式会社 ミストコレクタ
JPH0775713A (ja) * 1993-09-07 1995-03-20 Teijin Ltd 液滴除去装置
US5593479A (en) * 1995-02-02 1997-01-14 Hmi Industries, Inc. Filter system
US5669949A (en) * 1995-04-21 1997-09-23 Donaldson Company, Inc. Air filtration arrangement
US5820641A (en) * 1996-02-09 1998-10-13 Mks Instruments, Inc. Fluid cooled trap
US6093228A (en) * 1998-11-18 2000-07-25 Winbond Electronics Corp. Method and device for collecting by-products individually
US6197119B1 (en) * 1999-02-18 2001-03-06 Mks Instruments, Inc. Method and apparatus for controlling polymerized teos build-up in vacuum pump lines
US6238514B1 (en) * 1999-02-18 2001-05-29 Mks Instruments, Inc. Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent
US7857883B2 (en) * 2007-10-17 2010-12-28 Cummins Filtration Ip, Inc. Inertial gas-liquid separator with constrictable and expansible nozzle valve sidewall
US7871587B2 (en) * 2008-12-23 2011-01-18 Mks Instruments, Inc. Reactive chemical containment system
KR101024504B1 (ko) * 2009-04-01 2011-03-31 주식회사 미래보 입자 관성을 이용한 반도체 공정에서의 잔류 케미칼 및 부산물 포집장치
KR101362439B1 (ko) * 2012-03-30 2014-02-13 (주)아인스 반도체 제조용 트랩장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460975B (en) * 1999-03-11 2001-10-21 Tokyo Electron Ltd Treating device, vacuum exhaust system for treating device, evacuating CVD device, vacuum exhaust system for evacuating CVD device, and trapping device

Also Published As

Publication number Publication date
KR20150045906A (ko) 2015-04-29
US20150107771A1 (en) 2015-04-23
JP6289859B2 (ja) 2018-03-07
JP2015080738A (ja) 2015-04-27
KR102301024B1 (ko) 2021-09-09
TW201527581A (zh) 2015-07-16

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