TWI656111B - 光酸產生劑 - Google Patents
光酸產生劑 Download PDFInfo
- Publication number
- TWI656111B TWI656111B TW106146513A TW106146513A TWI656111B TW I656111 B TWI656111 B TW I656111B TW 106146513 A TW106146513 A TW 106146513A TW 106146513 A TW106146513 A TW 106146513A TW I656111 B TWI656111 B TW I656111B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- polycyclic
- monocyclic
- photoacid generator
- formula
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
- C07C25/18—Polycyclic aromatic halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/24—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms containing cyano groups and singly-bound nitrogen atoms, not being further bound to other hetero atoms, bound to the same saturated acyclic carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/31—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/32—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring
- C07C255/34—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring with cyano groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by unsaturated carbon chains
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
- C07D335/12—Thioxanthenes
- C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
- C07D335/16—Oxygen atoms, e.g. thioxanthones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2602/00—Systems containing two condensed rings
- C07C2602/02—Systems containing two condensed rings the rings having only two atoms in common
- C07C2602/04—One of the condensed rings being a six-membered aromatic ring
- C07C2602/08—One of the condensed rings being a six-membered aromatic ring the other ring being five-membered, e.g. indane
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562273521P | 2015-12-31 | 2015-12-31 | |
| US62/273,521 | 2015-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201811738A TW201811738A (zh) | 2018-04-01 |
| TWI656111B true TWI656111B (zh) | 2019-04-11 |
Family
ID=59235672
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106146513A TWI656111B (zh) | 2015-12-31 | 2016-12-08 | 光酸產生劑 |
| TW105140692A TWI619699B (zh) | 2015-12-31 | 2016-12-08 | 光酸產生劑 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105140692A TWI619699B (zh) | 2015-12-31 | 2016-12-08 | 光酸產生劑 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10317795B2 (enExample) |
| JP (1) | JP6625962B2 (enExample) |
| KR (2) | KR101941474B1 (enExample) |
| CN (1) | CN106928109A (enExample) |
| TW (2) | TWI656111B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI662364B (zh) * | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
| US10831100B2 (en) * | 2017-11-20 | 2020-11-10 | Rohm And Haas Electronic Materials, Llc | Iodine-containing photoacid generators and compositions comprising the same |
| DE102018118278B4 (de) * | 2018-07-27 | 2025-02-20 | Novaled Gmbh | Elektronische Vorrichtung, Anzeigevorrichtung, Verfahren zum Herstellen derselben und eine Verbindung |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102161635A (zh) * | 2005-11-16 | 2011-08-24 | Az电子材料美国公司 | 光活性化合物 |
| CN102186815A (zh) * | 2008-10-20 | 2011-09-14 | 巴斯夫欧洲公司 | 锍衍生物及其作为潜酸的用途 |
| TW201136881A (en) * | 2009-12-14 | 2011-11-01 | Rohm & Haas Elect Mat | Sulfonyl photoacid generators and photoresists comprising same |
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| US2766243A (en) * | 1955-04-15 | 1956-10-09 | Du Pont | Acyclic, polynitrile-containing, unsaturated compound and its salts, and preparation thereof |
| EP0226635B1 (en) * | 1985-07-26 | 1989-09-06 | General Electric Company | Method for neutralization of organophilic acidic compounds |
| US5273840A (en) | 1990-08-01 | 1993-12-28 | Covalent Associates Incorporated | Methide salts, formulations, electrolytes and batteries formed therefrom |
| US5874616A (en) | 1995-03-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Preparation of bis (fluoroalkylenesulfonyl) imides and (fluoroalkysulfony) (fluorosulfonyl) imides |
| US5554664A (en) | 1995-03-06 | 1996-09-10 | Minnesota Mining And Manufacturing Company | Energy-activatable salts with fluorocarbon anions |
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| WO1999028292A1 (fr) | 1997-12-01 | 1999-06-10 | Acep Inc. | Sels de sulfones perfluores, et leurs utilisations comme materiaux a conduction ionique |
| EP1516230B1 (en) | 2002-06-26 | 2015-12-30 | FujiFilm Electronic Materials USA, Inc. | Photosensitive compositions |
| US7304175B2 (en) * | 2005-02-16 | 2007-12-04 | Sumitomo Chemical Company, Limited | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
| US7960087B2 (en) | 2005-03-11 | 2011-06-14 | Fujifilm Corporation | Positive photosensitive composition and pattern-forming method using the same |
| JP2006251466A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
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| WO2008012999A1 (en) | 2006-07-24 | 2008-01-31 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method of forming resist pattern |
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| KR100973033B1 (ko) | 2008-05-21 | 2010-07-30 | 금호석유화학 주식회사 | 화학증폭형 레지스트 조성물용 산발생제 |
| JP5481944B2 (ja) * | 2008-06-12 | 2014-04-23 | セントラル硝子株式会社 | 含フッ素重合体およびそれを用いた帯電防止剤 |
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| US8338077B2 (en) | 2009-06-22 | 2012-12-25 | Rohm And Haas Electronic Materials Llc | Photoacid generators and photoresists comprising same |
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| EP2458440A1 (en) | 2010-11-30 | 2012-05-30 | Rohm and Haas Electronic Materials LLC | Photoacid generators |
| KR101332316B1 (ko) | 2011-02-07 | 2013-11-22 | 금호석유화학 주식회사 | 광산발생제, 이의 제조 방법 및 이를 포함하는 레지스트 조성물 |
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| JP6089389B2 (ja) * | 2011-10-18 | 2017-03-08 | 日立化成株式会社 | 電子受容性化合物及びその製造方法、該化合物を含む重合開始剤、有機エレクトロニクス材料及びこれらを用いた有機薄膜、有機エレクトロニクス素子、有機エレクトロルミネセンス素子、表示素子、照明装置、並びに表示装置 |
| JP2014156585A (ja) * | 2013-01-16 | 2014-08-28 | Cemedine Co Ltd | 光硬化性組成物 |
| US10665786B2 (en) * | 2013-03-08 | 2020-05-26 | Hitachi Chemical Company, Ltd. | Treatment liquid containing ionic compound, organic electronic element, and method for producing organic electronic element |
| US9067909B2 (en) | 2013-08-28 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Photoacid generator, photoresist, coated substrate, and method of forming an electronic device |
| TWI662364B (zh) | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
-
2016
- 2016-12-08 TW TW106146513A patent/TWI656111B/zh active
- 2016-12-08 TW TW105140692A patent/TWI619699B/zh active
- 2016-12-14 JP JP2016242701A patent/JP6625962B2/ja active Active
- 2016-12-19 KR KR1020160173307A patent/KR101941474B1/ko active Active
- 2016-12-21 CN CN201611192232.7A patent/CN106928109A/zh active Pending
- 2016-12-22 US US15/387,782 patent/US10317795B2/en active Active
-
2019
- 2019-01-14 KR KR1020190004622A patent/KR102062559B1/ko active Active
- 2019-04-08 US US16/377,714 patent/US10509315B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102161635A (zh) * | 2005-11-16 | 2011-08-24 | Az电子材料美国公司 | 光活性化合物 |
| CN102186815A (zh) * | 2008-10-20 | 2011-09-14 | 巴斯夫欧洲公司 | 锍衍生物及其作为潜酸的用途 |
| TW201136881A (en) * | 2009-12-14 | 2011-11-01 | Rohm & Haas Elect Mat | Sulfonyl photoacid generators and photoresists comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106928109A (zh) | 2017-07-07 |
| JP2017125007A (ja) | 2017-07-20 |
| US20170192352A1 (en) | 2017-07-06 |
| US10317795B2 (en) | 2019-06-11 |
| TW201725195A (zh) | 2017-07-16 |
| TWI619699B (zh) | 2018-04-01 |
| US20190243239A1 (en) | 2019-08-08 |
| KR101941474B1 (ko) | 2019-04-12 |
| JP6625962B2 (ja) | 2019-12-25 |
| KR20170080479A (ko) | 2017-07-10 |
| KR20190008394A (ko) | 2019-01-23 |
| KR102062559B1 (ko) | 2020-01-06 |
| US10509315B2 (en) | 2019-12-17 |
| TW201811738A (zh) | 2018-04-01 |
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