JP6625962B2 - 光酸発生剤 - Google Patents
光酸発生剤 Download PDFInfo
- Publication number
- JP6625962B2 JP6625962B2 JP2016242701A JP2016242701A JP6625962B2 JP 6625962 B2 JP6625962 B2 JP 6625962B2 JP 2016242701 A JP2016242701 A JP 2016242701A JP 2016242701 A JP2016242701 A JP 2016242701A JP 6625962 B2 JP6625962 B2 JP 6625962B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- polycyclic
- monocyclic
- organic
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 0 CC(C(C)(*)C#N)C#N Chemical compound CC(C(C)(*)C#N)C#N 0.000 description 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
- C07C25/18—Polycyclic aromatic halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/24—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms containing cyano groups and singly-bound nitrogen atoms, not being further bound to other hetero atoms, bound to the same saturated acyclic carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/31—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/32—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring
- C07C255/34—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring with cyano groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by unsaturated carbon chains
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
- C07D335/12—Thioxanthenes
- C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
- C07D335/16—Oxygen atoms, e.g. thioxanthones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2602/00—Systems containing two condensed rings
- C07C2602/02—Systems containing two condensed rings the rings having only two atoms in common
- C07C2602/04—One of the condensed rings being a six-membered aromatic ring
- C07C2602/08—One of the condensed rings being a six-membered aromatic ring the other ring being five-membered, e.g. indane
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Medicinal Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562273521P | 2015-12-31 | 2015-12-31 | |
| US62/273,521 | 2015-12-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017125007A JP2017125007A (ja) | 2017-07-20 |
| JP2017125007A5 JP2017125007A5 (enExample) | 2018-04-26 |
| JP6625962B2 true JP6625962B2 (ja) | 2019-12-25 |
Family
ID=59235672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016242701A Active JP6625962B2 (ja) | 2015-12-31 | 2016-12-14 | 光酸発生剤 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10317795B2 (enExample) |
| JP (1) | JP6625962B2 (enExample) |
| KR (2) | KR101941474B1 (enExample) |
| CN (1) | CN106928109A (enExample) |
| TW (2) | TWI619699B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI662364B (zh) * | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
| US10831100B2 (en) * | 2017-11-20 | 2020-11-10 | Rohm And Haas Electronic Materials, Llc | Iodine-containing photoacid generators and compositions comprising the same |
| DE102018118278B4 (de) * | 2018-07-27 | 2025-02-20 | Novaled Gmbh | Elektronische Vorrichtung, Anzeigevorrichtung, Verfahren zum Herstellen derselben und eine Verbindung |
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| DE3665450D1 (en) * | 1985-07-26 | 1989-10-12 | Gen Electric | Method for neutralization of organophilic acidic compounds |
| US5273840A (en) | 1990-08-01 | 1993-12-28 | Covalent Associates Incorporated | Methide salts, formulations, electrolytes and batteries formed therefrom |
| US5874616A (en) | 1995-03-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Preparation of bis (fluoroalkylenesulfonyl) imides and (fluoroalkysulfony) (fluorosulfonyl) imides |
| US5554664A (en) | 1995-03-06 | 1996-09-10 | Minnesota Mining And Manufacturing Company | Energy-activatable salts with fluorocarbon anions |
| CA2704986C (fr) | 1996-12-30 | 2013-04-09 | Hydro-Quebec | Utilisation d'un compose ionique derive du malononitrile comme photoinitiateur, amorceur radicalaire ou catalyseur dans les procedes de polymerisation, ou comme colorant cationique |
| US6620546B1 (en) * | 1997-12-01 | 2003-09-16 | Acep Inc. | Materials for use as electrolytic solutes |
| US6911297B2 (en) | 2002-06-26 | 2005-06-28 | Arch Specialty Chemicals, Inc. | Photoresist compositions |
| US7304175B2 (en) | 2005-02-16 | 2007-12-04 | Sumitomo Chemical Company, Limited | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
| JP2006251466A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US7960087B2 (en) | 2005-03-11 | 2011-06-14 | Fujifilm Corporation | Positive photosensitive composition and pattern-forming method using the same |
| TWI394004B (zh) * | 2005-03-30 | 2013-04-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型光阻組成物 |
| US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
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| JP2008026725A (ja) | 2006-07-24 | 2008-02-07 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
| US9464172B2 (en) | 2007-12-10 | 2016-10-11 | Kaneka Corporation | Alkali-developable curable composition, insulating thin film using the same, and thin film transistor |
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| US20090181319A1 (en) | 2008-01-16 | 2009-07-16 | International Business Machines Corporation | Aromatic fluorine-free photoacid generators and photoresist compositions containing the same |
| KR100973033B1 (ko) | 2008-05-21 | 2010-07-30 | 금호석유화학 주식회사 | 화학증폭형 레지스트 조성물용 산발생제 |
| JP5481944B2 (ja) * | 2008-06-12 | 2014-04-23 | セントラル硝子株式会社 | 含フッ素重合体およびそれを用いた帯電防止剤 |
| KR101653427B1 (ko) * | 2008-10-20 | 2016-09-01 | 바스프 에스이 | 술포늄 유도체 및 잠재성 산으로서의 그의 용도 |
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| EP2383611A3 (en) | 2010-04-27 | 2012-01-25 | Rohm and Haas Electronic Materials LLC | Photoacid generators and photoresists comprising same |
| JP5470189B2 (ja) | 2010-07-30 | 2014-04-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いたレジスト膜及びパターン形成方法 |
| JP6049250B2 (ja) | 2010-11-30 | 2016-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 光酸発生剤 |
| KR101332316B1 (ko) * | 2011-02-07 | 2013-11-22 | 금호석유화학 주식회사 | 광산발생제, 이의 제조 방법 및 이를 포함하는 레지스트 조성물 |
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| JP6089389B2 (ja) * | 2011-10-18 | 2017-03-08 | 日立化成株式会社 | 電子受容性化合物及びその製造方法、該化合物を含む重合開始剤、有機エレクトロニクス材料及びこれらを用いた有機薄膜、有機エレクトロニクス素子、有機エレクトロルミネセンス素子、表示素子、照明装置、並びに表示装置 |
| JP2014156585A (ja) * | 2013-01-16 | 2014-08-28 | Cemedine Co Ltd | 光硬化性組成物 |
| US10665786B2 (en) * | 2013-03-08 | 2020-05-26 | Hitachi Chemical Company, Ltd. | Treatment liquid containing ionic compound, organic electronic element, and method for producing organic electronic element |
| US9067909B2 (en) | 2013-08-28 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Photoacid generator, photoresist, coated substrate, and method of forming an electronic device |
| TWI662364B (zh) | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
-
2016
- 2016-12-08 TW TW105140692A patent/TWI619699B/zh active
- 2016-12-08 TW TW106146513A patent/TWI656111B/zh active
- 2016-12-14 JP JP2016242701A patent/JP6625962B2/ja active Active
- 2016-12-19 KR KR1020160173307A patent/KR101941474B1/ko active Active
- 2016-12-21 CN CN201611192232.7A patent/CN106928109A/zh active Pending
- 2016-12-22 US US15/387,782 patent/US10317795B2/en active Active
-
2019
- 2019-01-14 KR KR1020190004622A patent/KR102062559B1/ko active Active
- 2019-04-08 US US16/377,714 patent/US10509315B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170080479A (ko) | 2017-07-10 |
| US10509315B2 (en) | 2019-12-17 |
| TW201725195A (zh) | 2017-07-16 |
| TWI619699B (zh) | 2018-04-01 |
| US20170192352A1 (en) | 2017-07-06 |
| US20190243239A1 (en) | 2019-08-08 |
| TWI656111B (zh) | 2019-04-11 |
| TW201811738A (zh) | 2018-04-01 |
| KR101941474B1 (ko) | 2019-04-12 |
| JP2017125007A (ja) | 2017-07-20 |
| CN106928109A (zh) | 2017-07-07 |
| US10317795B2 (en) | 2019-06-11 |
| KR102062559B1 (ko) | 2020-01-06 |
| KR20190008394A (ko) | 2019-01-23 |
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