TWI619699B - 光酸產生劑 - Google Patents

光酸產生劑 Download PDF

Info

Publication number
TWI619699B
TWI619699B TW105140692A TW105140692A TWI619699B TW I619699 B TWI619699 B TW I619699B TW 105140692 A TW105140692 A TW 105140692A TW 105140692 A TW105140692 A TW 105140692A TW I619699 B TWI619699 B TW I619699B
Authority
TW
Taiwan
Prior art keywords
group
formula
photoacid generator
monocyclic
polycyclic
Prior art date
Application number
TW105140692A
Other languages
English (en)
Chinese (zh)
Other versions
TW201725195A (zh
Inventor
William Williams, Iii
威廉 Iii 威廉斯
Emad Aqad
伊馬德 阿克德
James F. Cameron
詹姆士F 卡麥隆
Original Assignee
Rohm And Haas Electronic Materials Llc
羅門哈斯電子材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm And Haas Electronic Materials Llc, 羅門哈斯電子材料有限公司 filed Critical Rohm And Haas Electronic Materials Llc
Publication of TW201725195A publication Critical patent/TW201725195A/zh
Application granted granted Critical
Publication of TWI619699B publication Critical patent/TWI619699B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C25/00Compounds containing at least one halogen atom bound to a six-membered aromatic ring
    • C07C25/18Polycyclic aromatic halogenated hydrocarbons
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00Carboxylic acid nitriles
    • C07C255/01Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
    • C07C255/24Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms containing cyano groups and singly-bound nitrogen atoms, not being further bound to other hetero atoms, bound to the same saturated acyclic carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00Carboxylic acid nitriles
    • C07C255/01Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
    • C07C255/31Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing rings other than six-membered aromatic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C255/00Carboxylic acid nitriles
    • C07C255/01Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
    • C07C255/32Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring
    • C07C255/34Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring with cyano groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by unsaturated carbon chains
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/76Dibenzothiophenes
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D335/00Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/04Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D335/10Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
    • C07D335/12Thioxanthenes
    • C07D335/14Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
    • C07D335/16Oxygen atoms, e.g. thioxanthones
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • C08L33/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/08Homopolymers or copolymers of acrylic acid esters
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00Systems containing two condensed rings
    • C07C2602/02Systems containing two condensed rings the rings having only two atoms in common
    • C07C2602/04One of the condensed rings being a six-membered aromatic ring
    • C07C2602/08One of the condensed rings being a six-membered aromatic ring the other ring being five-membered, e.g. indane
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/56Ring systems containing bridged rings
    • C07C2603/58Ring systems containing bridged rings containing three rings
    • C07C2603/70Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74Adamantanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
TW105140692A 2015-12-31 2016-12-08 光酸產生劑 TWI619699B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562273521P 2015-12-31 2015-12-31
US62/273,521 2015-12-31

Publications (2)

Publication Number Publication Date
TW201725195A TW201725195A (zh) 2017-07-16
TWI619699B true TWI619699B (zh) 2018-04-01

Family

ID=59235672

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105140692A TWI619699B (zh) 2015-12-31 2016-12-08 光酸產生劑
TW106146513A TWI656111B (zh) 2015-12-31 2016-12-08 光酸產生劑

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106146513A TWI656111B (zh) 2015-12-31 2016-12-08 光酸產生劑

Country Status (5)

Country Link
US (2) US10317795B2 (enExample)
JP (1) JP6625962B2 (enExample)
KR (2) KR101941474B1 (enExample)
CN (1) CN106928109A (enExample)
TW (2) TWI619699B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI662364B (zh) * 2015-12-31 2019-06-11 Rohm And Haas Electronic Materials Llc 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法
US10831100B2 (en) * 2017-11-20 2020-11-10 Rohm And Haas Electronic Materials, Llc Iodine-containing photoacid generators and compositions comprising the same
DE102018118278B4 (de) * 2018-07-27 2025-02-20 Novaled Gmbh Elektronische Vorrichtung, Anzeigevorrichtung, Verfahren zum Herstellen derselben und eine Verbindung

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632551A (en) * 2005-02-16 2006-09-16 Sumitomo Chemical Co A salt suitable for an acid generator and a chemically amplified resist composition containing the same
CN102279520A (zh) * 2010-03-31 2011-12-14 罗门哈斯电子材料有限公司 新聚合物和光致抗蚀剂组合物
US8124803B2 (en) * 2005-03-30 2012-02-28 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
CN101930173B (zh) * 2009-06-22 2014-05-14 罗门哈斯电子材料有限公司 光致酸产生剂和其光致抗蚀剂
CN102629074B (zh) * 2011-02-07 2014-08-06 锦湖石油化学株式会社 光酸产生剂、其制备方法及包含光酸产生剂的抗蚀剂组合物
CN102207678B (zh) * 2010-01-25 2015-05-20 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
CN102344400B (zh) * 2010-04-27 2015-07-15 罗门哈斯电子材料有限公司 光酸产生剂及含有它的光致抗蚀剂

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2766243A (en) * 1955-04-15 1956-10-09 Du Pont Acyclic, polynitrile-containing, unsaturated compound and its salts, and preparation thereof
DE3665450D1 (en) * 1985-07-26 1989-10-12 Gen Electric Method for neutralization of organophilic acidic compounds
US5273840A (en) 1990-08-01 1993-12-28 Covalent Associates Incorporated Methide salts, formulations, electrolytes and batteries formed therefrom
US5874616A (en) 1995-03-06 1999-02-23 Minnesota Mining And Manufacturing Company Preparation of bis (fluoroalkylenesulfonyl) imides and (fluoroalkysulfony) (fluorosulfonyl) imides
US5554664A (en) 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
CA2704986C (fr) 1996-12-30 2013-04-09 Hydro-Quebec Utilisation d'un compose ionique derive du malononitrile comme photoinitiateur, amorceur radicalaire ou catalyseur dans les procedes de polymerisation, ou comme colorant cationique
US6620546B1 (en) * 1997-12-01 2003-09-16 Acep Inc. Materials for use as electrolytic solutes
US6911297B2 (en) 2002-06-26 2005-06-28 Arch Specialty Chemicals, Inc. Photoresist compositions
JP2006251466A (ja) * 2005-03-11 2006-09-21 Fuji Photo Film Co Ltd 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7960087B2 (en) 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
US7678528B2 (en) * 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
EP2045661A1 (en) 2006-07-24 2009-04-08 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
JP2008026725A (ja) 2006-07-24 2008-02-07 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
US9464172B2 (en) 2007-12-10 2016-10-11 Kaneka Corporation Alkali-developable curable composition, insulating thin film using the same, and thin film transistor
US8039194B2 (en) 2008-01-08 2011-10-18 Internatinal Business Machines Corporation Photoacid generators for extreme ultraviolet lithography
US7655379B2 (en) 2008-01-08 2010-02-02 International Business Machines Corporation Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions
US8034533B2 (en) 2008-01-16 2011-10-11 International Business Machines Corporation Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same
US20090181319A1 (en) 2008-01-16 2009-07-16 International Business Machines Corporation Aromatic fluorine-free photoacid generators and photoresist compositions containing the same
KR100973033B1 (ko) 2008-05-21 2010-07-30 금호석유화학 주식회사 화학증폭형 레지스트 조성물용 산발생제
JP5481944B2 (ja) * 2008-06-12 2014-04-23 セントラル硝子株式会社 含フッ素重合体およびそれを用いた帯電防止剤
KR101653427B1 (ko) * 2008-10-20 2016-09-01 바스프 에스이 술포늄 유도체 및 잠재성 산으로서의 그의 용도
KR101660041B1 (ko) * 2008-11-28 2016-09-26 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법, 신규 화합물 및 산발생제
JP5645459B2 (ja) 2009-07-10 2014-12-24 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物およびこれを用いたパターン形成方法
JP2011046696A (ja) * 2009-07-30 2011-03-10 Sumitomo Chemical Co Ltd 塩、レジスト組成物及びレジストパターンの製造方法
JP2011046698A (ja) * 2009-07-31 2011-03-10 Tohoku Univ 変異タンパク質の製造方法
JP5699080B2 (ja) * 2009-08-03 2015-04-08 サンアプロ株式会社 光酸発生剤,光硬化性組成物,及びその硬化体
JP5244740B2 (ja) 2009-08-26 2013-07-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP5448651B2 (ja) 2009-08-31 2014-03-19 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及びそれを用いたパターン形成方法
KR101857467B1 (ko) * 2009-12-14 2018-06-28 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 설포닐 광산 발생제 및 이를 포함하는 포토레지스트
JP5696723B2 (ja) * 2010-04-22 2015-04-08 日立化成株式会社 有機エレクトロニクス材料、重合開始剤及び熱重合開始剤、インク組成物、有機薄膜及びその製造方法、有機エレクトロニクス素子、有機エレクトロルミネセンス素子、照明装置、表示素子、並びに表示装置
JP5470189B2 (ja) 2010-07-30 2014-04-16 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いたレジスト膜及びパターン形成方法
JP6049250B2 (ja) 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤
JP2012185871A (ja) 2011-03-03 2012-09-27 Fujifilm Corp 締結補助具及びリールの締結方法並びにリールアセンブリ
JP5651636B2 (ja) 2011-07-28 2015-01-14 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
JP6089389B2 (ja) * 2011-10-18 2017-03-08 日立化成株式会社 電子受容性化合物及びその製造方法、該化合物を含む重合開始剤、有機エレクトロニクス材料及びこれらを用いた有機薄膜、有機エレクトロニクス素子、有機エレクトロルミネセンス素子、表示素子、照明装置、並びに表示装置
JP2014156585A (ja) * 2013-01-16 2014-08-28 Cemedine Co Ltd 光硬化性組成物
US10665786B2 (en) * 2013-03-08 2020-05-26 Hitachi Chemical Company, Ltd. Treatment liquid containing ionic compound, organic electronic element, and method for producing organic electronic element
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
TWI662364B (zh) 2015-12-31 2019-06-11 Rohm And Haas Electronic Materials Llc 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632551A (en) * 2005-02-16 2006-09-16 Sumitomo Chemical Co A salt suitable for an acid generator and a chemically amplified resist composition containing the same
US8124803B2 (en) * 2005-03-30 2012-02-28 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
CN101930173B (zh) * 2009-06-22 2014-05-14 罗门哈斯电子材料有限公司 光致酸产生剂和其光致抗蚀剂
CN102207678B (zh) * 2010-01-25 2015-05-20 罗门哈斯电子材料有限公司 包含含氮化合物的光致抗蚀剂
CN102279520A (zh) * 2010-03-31 2011-12-14 罗门哈斯电子材料有限公司 新聚合物和光致抗蚀剂组合物
CN102344400B (zh) * 2010-04-27 2015-07-15 罗门哈斯电子材料有限公司 光酸产生剂及含有它的光致抗蚀剂
CN102629074B (zh) * 2011-02-07 2014-08-06 锦湖石油化学株式会社 光酸产生剂、其制备方法及包含光酸产生剂的抗蚀剂组合物

Also Published As

Publication number Publication date
KR20170080479A (ko) 2017-07-10
JP6625962B2 (ja) 2019-12-25
US10509315B2 (en) 2019-12-17
TW201725195A (zh) 2017-07-16
US20170192352A1 (en) 2017-07-06
US20190243239A1 (en) 2019-08-08
TWI656111B (zh) 2019-04-11
TW201811738A (zh) 2018-04-01
KR101941474B1 (ko) 2019-04-12
JP2017125007A (ja) 2017-07-20
CN106928109A (zh) 2017-07-07
US10317795B2 (en) 2019-06-11
KR102062559B1 (ko) 2020-01-06
KR20190008394A (ko) 2019-01-23

Similar Documents

Publication Publication Date Title
TWI662364B (zh) 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法
TWI522737B (zh) Euv用光阻組成物,euv用光阻組成物之製造方法及光阻圖型之形成方法
KR101670312B1 (ko) 광산 발생제, 포토레지스트, 코팅된 기판 및 전자 디바이스의 형성 방법
JP6613020B2 (ja) カルバメート成分を含むフォトレジスト
TWI591428B (zh) 光阻組成物及光阻圖型之形成方法
TW201039065A (en) Positive resist composition, method of forming resist pattern using the same, and polymeric compound
CN107880017A (zh) 两性离子光可破坏淬灭剂
TWI523873B (zh) 光阻圖型之形成方法,及負型顯影用光阻組成物
TWI624723B (zh) 光阻材料及使用該光阻材料的圖案形成方法
TWI395066B (zh) 正型光阻組成物及光阻圖型之形成方法
TW201405250A (zh) 高分子化合物、正型光阻材料及利用此之圖案形成方法
TW201917115A (zh) 聚合性單體、聚合物、光阻材料及圖案形成方法
TWI619699B (zh) 光酸產生劑