TWI619699B - 光酸產生劑 - Google Patents
光酸產生劑 Download PDFInfo
- Publication number
- TWI619699B TWI619699B TW105140692A TW105140692A TWI619699B TW I619699 B TWI619699 B TW I619699B TW 105140692 A TW105140692 A TW 105140692A TW 105140692 A TW105140692 A TW 105140692A TW I619699 B TWI619699 B TW I619699B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- formula
- photoacid generator
- monocyclic
- polycyclic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C25/00—Compounds containing at least one halogen atom bound to a six-membered aromatic ring
- C07C25/18—Polycyclic aromatic halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/24—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms containing cyano groups and singly-bound nitrogen atoms, not being further bound to other hetero atoms, bound to the same saturated acyclic carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/31—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C255/00—Carboxylic acid nitriles
- C07C255/01—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms
- C07C255/32—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring
- C07C255/34—Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring with cyano groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by unsaturated carbon chains
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
- C07D335/12—Thioxanthenes
- C07D335/14—Thioxanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
- C07D335/16—Oxygen atoms, e.g. thioxanthones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2602/00—Systems containing two condensed rings
- C07C2602/02—Systems containing two condensed rings the rings having only two atoms in common
- C07C2602/04—One of the condensed rings being a six-membered aromatic ring
- C07C2602/08—One of the condensed rings being a six-membered aromatic ring the other ring being five-membered, e.g. indane
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Medicinal Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562273521P | 2015-12-31 | 2015-12-31 | |
| US62/273,521 | 2015-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201725195A TW201725195A (zh) | 2017-07-16 |
| TWI619699B true TWI619699B (zh) | 2018-04-01 |
Family
ID=59235672
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105140692A TWI619699B (zh) | 2015-12-31 | 2016-12-08 | 光酸產生劑 |
| TW106146513A TWI656111B (zh) | 2015-12-31 | 2016-12-08 | 光酸產生劑 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106146513A TWI656111B (zh) | 2015-12-31 | 2016-12-08 | 光酸產生劑 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10317795B2 (enExample) |
| JP (1) | JP6625962B2 (enExample) |
| KR (2) | KR101941474B1 (enExample) |
| CN (1) | CN106928109A (enExample) |
| TW (2) | TWI619699B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI662364B (zh) * | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
| US10831100B2 (en) * | 2017-11-20 | 2020-11-10 | Rohm And Haas Electronic Materials, Llc | Iodine-containing photoacid generators and compositions comprising the same |
| DE102018118278B4 (de) * | 2018-07-27 | 2025-02-20 | Novaled Gmbh | Elektronische Vorrichtung, Anzeigevorrichtung, Verfahren zum Herstellen derselben und eine Verbindung |
Citations (7)
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| TW200632551A (en) * | 2005-02-16 | 2006-09-16 | Sumitomo Chemical Co | A salt suitable for an acid generator and a chemically amplified resist composition containing the same |
| CN102279520A (zh) * | 2010-03-31 | 2011-12-14 | 罗门哈斯电子材料有限公司 | 新聚合物和光致抗蚀剂组合物 |
| US8124803B2 (en) * | 2005-03-30 | 2012-02-28 | Sumitomo Chemical Company, Limited | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
| CN101930173B (zh) * | 2009-06-22 | 2014-05-14 | 罗门哈斯电子材料有限公司 | 光致酸产生剂和其光致抗蚀剂 |
| CN102629074B (zh) * | 2011-02-07 | 2014-08-06 | 锦湖石油化学株式会社 | 光酸产生剂、其制备方法及包含光酸产生剂的抗蚀剂组合物 |
| CN102207678B (zh) * | 2010-01-25 | 2015-05-20 | 罗门哈斯电子材料有限公司 | 包含含氮化合物的光致抗蚀剂 |
| CN102344400B (zh) * | 2010-04-27 | 2015-07-15 | 罗门哈斯电子材料有限公司 | 光酸产生剂及含有它的光致抗蚀剂 |
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| JP5470189B2 (ja) | 2010-07-30 | 2014-04-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いたレジスト膜及びパターン形成方法 |
| JP6049250B2 (ja) | 2010-11-30 | 2016-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 光酸発生剤 |
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| JP5651636B2 (ja) | 2011-07-28 | 2015-01-14 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス |
| JP6089389B2 (ja) * | 2011-10-18 | 2017-03-08 | 日立化成株式会社 | 電子受容性化合物及びその製造方法、該化合物を含む重合開始剤、有機エレクトロニクス材料及びこれらを用いた有機薄膜、有機エレクトロニクス素子、有機エレクトロルミネセンス素子、表示素子、照明装置、並びに表示装置 |
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| US9067909B2 (en) | 2013-08-28 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Photoacid generator, photoresist, coated substrate, and method of forming an electronic device |
| TWI662364B (zh) | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
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2016
- 2016-12-08 TW TW105140692A patent/TWI619699B/zh active
- 2016-12-08 TW TW106146513A patent/TWI656111B/zh active
- 2016-12-14 JP JP2016242701A patent/JP6625962B2/ja active Active
- 2016-12-19 KR KR1020160173307A patent/KR101941474B1/ko active Active
- 2016-12-21 CN CN201611192232.7A patent/CN106928109A/zh active Pending
- 2016-12-22 US US15/387,782 patent/US10317795B2/en active Active
-
2019
- 2019-01-14 KR KR1020190004622A patent/KR102062559B1/ko active Active
- 2019-04-08 US US16/377,714 patent/US10509315B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200632551A (en) * | 2005-02-16 | 2006-09-16 | Sumitomo Chemical Co | A salt suitable for an acid generator and a chemically amplified resist composition containing the same |
| US8124803B2 (en) * | 2005-03-30 | 2012-02-28 | Sumitomo Chemical Company, Limited | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
| CN101930173B (zh) * | 2009-06-22 | 2014-05-14 | 罗门哈斯电子材料有限公司 | 光致酸产生剂和其光致抗蚀剂 |
| CN102207678B (zh) * | 2010-01-25 | 2015-05-20 | 罗门哈斯电子材料有限公司 | 包含含氮化合物的光致抗蚀剂 |
| CN102279520A (zh) * | 2010-03-31 | 2011-12-14 | 罗门哈斯电子材料有限公司 | 新聚合物和光致抗蚀剂组合物 |
| CN102344400B (zh) * | 2010-04-27 | 2015-07-15 | 罗门哈斯电子材料有限公司 | 光酸产生剂及含有它的光致抗蚀剂 |
| CN102629074B (zh) * | 2011-02-07 | 2014-08-06 | 锦湖石油化学株式会社 | 光酸产生剂、其制备方法及包含光酸产生剂的抗蚀剂组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170080479A (ko) | 2017-07-10 |
| JP6625962B2 (ja) | 2019-12-25 |
| US10509315B2 (en) | 2019-12-17 |
| TW201725195A (zh) | 2017-07-16 |
| US20170192352A1 (en) | 2017-07-06 |
| US20190243239A1 (en) | 2019-08-08 |
| TWI656111B (zh) | 2019-04-11 |
| TW201811738A (zh) | 2018-04-01 |
| KR101941474B1 (ko) | 2019-04-12 |
| JP2017125007A (ja) | 2017-07-20 |
| CN106928109A (zh) | 2017-07-07 |
| US10317795B2 (en) | 2019-06-11 |
| KR102062559B1 (ko) | 2020-01-06 |
| KR20190008394A (ko) | 2019-01-23 |
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