TWI652277B - 原子層沈積用有機金屬前驅物化合物、沉積有其的薄膜以及薄膜製造方法 - Google Patents

原子層沈積用有機金屬前驅物化合物、沉積有其的薄膜以及薄膜製造方法 Download PDF

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TWI652277B
TWI652277B TW105122839A TW105122839A TWI652277B TW I652277 B TWI652277 B TW I652277B TW 105122839 A TW105122839 A TW 105122839A TW 105122839 A TW105122839 A TW 105122839A TW I652277 B TWI652277 B TW I652277B
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precursor compound
atomic layer
layer deposition
organometallic precursor
group
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TW105122839A
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TW201718606A (zh
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朴正佑
任民
朴鐘律
廉保拉
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韓松化學有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/30—Germanium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02535—Group 14 semiconducting materials including tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW105122839A 2015-11-23 2016-07-20 原子層沈積用有機金屬前驅物化合物、沉積有其的薄膜以及薄膜製造方法 TWI652277B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150164082A KR101787204B1 (ko) 2015-11-23 2015-11-23 원자층 증착용(ald) 유기금속 전구체 화합물 및 이를 이용한 ald 증착법
??10-2015-0164082 2015-11-23

Publications (2)

Publication Number Publication Date
TW201718606A TW201718606A (zh) 2017-06-01
TWI652277B true TWI652277B (zh) 2019-03-01

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TW105122839A TWI652277B (zh) 2015-11-23 2016-07-20 原子層沈積用有機金屬前驅物化合物、沉積有其的薄膜以及薄膜製造方法

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KR (1) KR101787204B1 (ko)
TW (1) TWI652277B (ko)
WO (1) WO2017090854A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
KR102087858B1 (ko) 2018-04-18 2020-03-12 주식회사 한솔케미칼 원자층 증착용(ald), 화학 기상 증착용(cvd) 전구체 화합물 및 이를 이용한 ald/cvd 증착법
US20210375710A1 (en) * 2018-11-22 2021-12-02 Mitsui Chemicals, Inc. Semiconductor element intermediate, and method of producing semiconductor element intermediate
KR102157137B1 (ko) * 2018-11-30 2020-09-17 주식회사 한솔케미칼 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법
IL283981B1 (en) * 2018-12-17 2024-10-01 Adeka Corp Raw material for creating a thin layer using an atomic layer deposition method, a method for the production of a thin layer and an alkoxide compound
CN110128373B (zh) * 2019-06-12 2023-03-24 鸿翌科技有限公司 哌嗪基锡配合物及其制备方法、薄膜、太阳能电池
US20230002423A1 (en) * 2019-10-17 2023-01-05 Adeka Corporation Novel tin compound, thin-film forming raw material containing said compound, thin film formed from said thin-film forming raw material, method of producing said thin film using said compound as precursor, and method of producing said thin film
KR20210093011A (ko) 2020-01-17 2021-07-27 주식회사 한솔케미칼 원자층 증착용(ald), 화학 기상 증착용(cvd) 전구체 화합물 및 이를 이용한 ald/cvd 증착법
KR102383410B1 (ko) 2020-07-23 2022-04-05 연세대학교 산학협력단 금속 산화물 박막의 전기적 특성 향상 방법
KR20220049970A (ko) * 2020-10-15 2022-04-22 한화솔루션 주식회사 Ald 공정에 의한 복합막이 증착된 금속 촉매의 제조방법 및 그에 따른 금속 촉매
CN116145107A (zh) * 2023-01-03 2023-05-23 南京工程学院 用于原子层沉积金属硫化物的反应残余物循环再利用方法及装置

Citations (1)

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US20090321733A1 (en) 2008-06-25 2009-12-31 Julien Gatineau Metal heterocyclic compounds for deposition of thin films

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Publication number Priority date Publication date Assignee Title
US8318966B2 (en) * 2006-06-23 2012-11-27 Praxair Technology, Inc. Organometallic compounds
KR101216068B1 (ko) * 2010-12-24 2012-12-27 주식회사 한솔케미칼 금속 산화물 또는 금속-규소 산화물 박막 증착용 유기 금속 전구체 및 이를 이용한 박막 증착 방법
KR20140067786A (ko) * 2012-11-27 2014-06-05 주식회사 유피케미칼 실리콘 전구체 화합물, 및 상기 전구체 화합물을 이용한 실리콘-함유 박막의 증착 방법

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20090321733A1 (en) 2008-06-25 2009-12-31 Julien Gatineau Metal heterocyclic compounds for deposition of thin films

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TW201718606A (zh) 2017-06-01
KR20170059742A (ko) 2017-05-31
WO2017090854A1 (ko) 2017-06-01
KR101787204B1 (ko) 2017-10-18

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