TWI651017B - 表面粗化方法 - Google Patents

表面粗化方法 Download PDF

Info

Publication number
TWI651017B
TWI651017B TW104110079A TW104110079A TWI651017B TW I651017 B TWI651017 B TW I651017B TW 104110079 A TW104110079 A TW 104110079A TW 104110079 A TW104110079 A TW 104110079A TW I651017 B TWI651017 B TW I651017B
Authority
TW
Taiwan
Prior art keywords
organic resin
substrate
layer
surface roughening
etching
Prior art date
Application number
TW104110079A
Other languages
English (en)
Chinese (zh)
Other versions
TW201611659A (zh
Inventor
染谷安信
坂本力丸
岸岡高広
Original Assignee
日商日產化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學工業股份有限公司 filed Critical 日商日產化學工業股份有限公司
Publication of TW201611659A publication Critical patent/TW201611659A/zh
Application granted granted Critical
Publication of TWI651017B publication Critical patent/TWI651017B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/854Arrangements for extracting light from the devices comprising scattering means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/331Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/877Arrangements for extracting light from the devices comprising scattering means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
TW104110079A 2014-03-28 2015-03-27 表面粗化方法 TWI651017B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014068009 2014-03-28
JP2014-068009 2014-03-28

Publications (2)

Publication Number Publication Date
TW201611659A TW201611659A (zh) 2016-03-16
TWI651017B true TWI651017B (zh) 2019-02-11

Family

ID=54195798

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104110079A TWI651017B (zh) 2014-03-28 2015-03-27 表面粗化方法

Country Status (5)

Country Link
JP (1) JP6551691B2 (ja)
KR (1) KR102358180B1 (ja)
CN (1) CN106061627B (ja)
TW (1) TWI651017B (ja)
WO (1) WO2015147294A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10804111B2 (en) * 2015-09-15 2020-10-13 Nissan Chemical Industries, Ltd. Method for roughening surface using wet treatment
KR20180118104A (ko) * 2015-12-08 2018-10-30 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 Oled에서의 발광 향상
TWI803390B (zh) * 2022-07-15 2023-05-21 三福化工股份有限公司 蝕刻液組成物及其蝕刻方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110267698A1 (en) * 2010-04-30 2011-11-03 Diane Kimberlie Guilfoyle Anti-glare surface treatment method and articles thereof
TW201411177A (zh) * 2012-08-01 2014-03-16 3M Innovative Properties Co 抗反射硬性塗層及抗反射物件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3313741B2 (ja) * 1991-08-02 2002-08-12 大日本印刷株式会社 部分蒸着化粧シートの製造方法
JP2006107744A (ja) 2004-09-30 2006-04-20 Toshiba Corp 有機エレクトロルミネッセンス表示装置
JP4887612B2 (ja) * 2004-10-20 2012-02-29 日油株式会社 減反射材及びそれを用いた電子画像表示装置
CN1921156A (zh) * 2005-08-26 2007-02-28 鸿富锦精密工业(深圳)有限公司 发光二极体光源模组及其制造方法
JP5214284B2 (ja) 2008-03-10 2013-06-19 株式会社東芝 発光装置用光取り出し層、およびそれを用いた有機エレクトロルミネッセンス素子
WO2010078071A1 (en) * 2008-12-30 2010-07-08 3M Innovative Properties Company Antireflective articles and methods of making the same
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
WO2011118109A1 (ja) * 2010-03-23 2011-09-29 株式会社朝日ラバー 可撓性反射基材、その製造方法及びその反射基材に用いる原材料組成物
JP2012175052A (ja) * 2011-02-24 2012-09-10 Stanley Electric Co Ltd 半導体発光装置の製造方法
US8692446B2 (en) * 2011-03-17 2014-04-08 3M Innovative Properties Company OLED light extraction films having nanoparticles and periodic structures
JP2013072929A (ja) * 2011-09-27 2013-04-22 Toshiba Corp 表示装置
CN102540562A (zh) * 2012-01-06 2012-07-04 中国电子科技集团公司第五十五研究所 液晶显示屏高透过低反射电磁屏蔽结构及制作方法
SG11201405941QA (en) * 2012-03-26 2014-10-30 3M Innovative Properties Co Article and method of making the same
US10804111B2 (en) * 2015-09-15 2020-10-13 Nissan Chemical Industries, Ltd. Method for roughening surface using wet treatment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110267698A1 (en) * 2010-04-30 2011-11-03 Diane Kimberlie Guilfoyle Anti-glare surface treatment method and articles thereof
TW201411177A (zh) * 2012-08-01 2014-03-16 3M Innovative Properties Co 抗反射硬性塗層及抗反射物件

Also Published As

Publication number Publication date
JP6551691B2 (ja) 2019-07-31
JPWO2015147294A1 (ja) 2017-04-13
WO2015147294A1 (ja) 2015-10-01
CN106061627A (zh) 2016-10-26
KR20160137958A (ko) 2016-12-02
TW201611659A (zh) 2016-03-16
KR102358180B1 (ko) 2022-02-04
CN106061627B (zh) 2020-08-04

Similar Documents

Publication Publication Date Title
TWI383263B (zh) 形成硬式光罩用塗佈型氮化膜之組成物
KR102132509B1 (ko) 하드마스크 및 충전 재료로서의 안정한 금속 화합물, 이들의 조성물 및 사용 방법
TWI567489B (zh) 用於微影應用之小分子的金屬氧化物薄膜
TWI600730B (zh) 多金屬氧酸鹽及雜多金屬氧酸鹽組合物與其使用方法
TWI667286B (zh) 抗蝕劑墊層組成物和使用所述組成物形成圖案的方法
TWI363251B (en) Sublayer coating-forming composition for lithography containing compound having protected carboxy group
JP5062420B2 (ja) ポリシラン化合物を含むリソグラフィー用下層膜形成組成物
KR102139579B1 (ko) 용제현상 리소그래피 프로세스용 유기하층막 형성조성물을 이용한 반도체장치의 제조방법
JP4697467B2 (ja) シクロデキストリン化合物を含有するリソグラフィー用下層膜形成組成物
CN109180722B (zh) 稳定的金属化合物、它们的组合物以及它们的使用方法
JP4793583B2 (ja) 金属酸化物を含むリソグラフィー用下層膜形成組成物
US10191374B2 (en) Resist underlayer film-forming composition
TWI651017B (zh) 表面粗化方法
TW200403536A (en) Composition for antireflection film formation
TWI534160B (zh) 樹脂組成物
US10804111B2 (en) Method for roughening surface using wet treatment
TW200421038A (en) Composition containing acrylic polymer for forming gap-filling material for lithography
TW201609932A (zh) 平坦化膜用或微透鏡用樹脂組成物
JP2021141205A (ja) 表面粗化方法及び表面粗化層を有する基板
TW202307120A (zh) 抗蝕劑底層膜形成用組成物、半導體基板的製造方法及抗蝕劑底層膜的形成方法