TWI643311B - 堆疊式積體電路封裝中的積體被動元件 - Google Patents

堆疊式積體電路封裝中的積體被動元件 Download PDF

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Publication number
TWI643311B
TWI643311B TW104138743A TW104138743A TWI643311B TW I643311 B TWI643311 B TW I643311B TW 104138743 A TW104138743 A TW 104138743A TW 104138743 A TW104138743 A TW 104138743A TW I643311 B TWI643311 B TW I643311B
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die
core
coupled
substrate
inductor
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TW104138743A
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TW201635479A (zh
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史蒂芬 魯蘇
唐納德 加德納
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美商英特爾公司
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Abstract

本文是描述在一堆疊式積體電路封裝中的積體被動元件。在一個實施例中，一設備具有一基材、於基材上方而耦接至基材的一第一晶粒、具有一處理核心並且於該第一晶粒上方而耦接至第一晶粒的一第二晶粒、以及一被動裝置。該第一晶粒包括耦接至該基材以接收電源的一電源供應電路，該第一晶粒耦接至該電源供應電路以提供該處理核心電力，該被動裝置附接至該第一晶粒並且耦接至該電源供應電路。

Description

堆疊式積體電路封裝中的積體被動元件 發明領域
本案是關於在一堆疊式處理器封裝中的積體被動元件之領域，特別是用於電力傳輸的積體元件。
發明背景
高功率處理器封裝正發展至具有更多處理核心以及不同型式的處理核心。這些核心需要來自一外部電源供應的電力傳送。在許多例子中，一積體電壓調節器係包括於一晶粒上，以作為一處理核心的一部分。該電壓調節器需要大型被動元件，例如放置於一些外部位置的電感器與電容器。隨著更多核心被使用，需要更多外部被動元件。
在另一個範例中，該電壓調節器連同非核心電路系統(例如，I/O、記憶體控制器、以及電源控制單元)係位於一分離的晶粒中，並且與該晶粒一起被封裝，該晶粒係與該晶粒上方的該等處理器核心以及與針對每一核心的一電壓調節器一起堆疊。此容許該晶粒中的更多空間與將可製造的微處理器核心，並且將該電源電路系統從該核心處理電路系統隔離。而用於該電壓調節器的大型被動電感器 與電容器仍被放置於透過貫孔、連接凸塊、或一些其他手段到達的一些外部位置。此等被動元件在從高速數位電路系統以及從高密度互連柵隔離時提供較高的Q值。當其等相較於處理器晶粒或著甚至電壓調節器晶粒製造得大時，其等提供較高的Q值。再者，當該等被動元件設置於靠近該核心被動電路系統時時，其等運作較佳。
依據本發明之一實施例，係特地提出一種設備，其包含一基材；一第一晶粒，覆蓋該基材地耦接於該基材，該第一晶粒包括耦接至該基材以接收電源的一電源供應電路；一第二晶粒，具有一處理核心並且於該第一晶粒上方而耦接至該第一晶粒，該第一晶粒耦接至該電源供應電路以提供該處理核心電力；以及一被動裝置，附接至該第一晶粒並且耦接至該電源供應電路。
2‧‧‧系統板
4‧‧‧處理器
6‧‧‧通訊封裝
8‧‧‧揮發性記憶體
9‧‧‧非揮發性記憶體
10‧‧‧主儲存裝置
12‧‧‧圖形處理器
14‧‧‧晶片組
16‧‧‧天線
18‧‧‧顯示器
20‧‧‧觸控顯示器控制器
22‧‧‧電池
24‧‧‧功率放大器
26‧‧‧全球定位系統裝置
28‧‧‧羅盤
30‧‧‧揚聲器
32‧‧‧相機
100‧‧‧計算裝置
102‧‧‧3D堆疊伺服器結構封裝
104、204、304、404、804‧‧‧基材
106、206‧‧‧非核心晶粒
108、208‧‧‧核心晶粒
110、210、310、410、608、810‧‧‧電感器
112、212、312、412、812‧‧‧電容器
114‧‧‧電壓調節電路；電晶體；電源供應電路
120、122、220、222、320、322、420、422‧‧‧電路
124‧‧‧散熱器
130‧‧‧連接墊；接地連接件GND
132、136‧‧‧連接墊；基材連接件
134‧‧‧連接墊
202‧‧‧堆疊伺服結構封裝
230‧‧‧GND連接件
234‧‧‧VIN連接器
302、402‧‧‧封裝
306、406‧‧‧非核心晶粒；第一晶粒
308、408‧‧‧核心晶粒；第二晶粒
314、414‧‧‧電壓調節器
338、348‧‧‧孔
340‧‧‧焊球格柵或微塊焊料格柵
502‧‧‧晶粒
504、604‧‧‧缺口
506‧‧‧磁性核心電感器
510‧‧‧底層
512、612‧‧‧側壁
514‧‧‧磁性核心材料
516‧‧‧銅線圈
602、702‧‧‧矽晶粒
610‧‧‧底面
614‧‧‧磁性材料
616‧‧‧銅線
704‧‧‧細孔
708‧‧‧第一導體層
710‧‧‧介電層
712‧‧‧第二導體層
802‧‧‧3D堆疊F2B封裝
806‧‧‧底部晶粒
808‧‧‧頂部晶粒
816、818‧‧‧電路層
820‧‧‧TSVs
822‧‧‧再分配層
824‧‧‧微型凸塊
826‧‧‧特定線路層
本發明的實施例係藉由範例的方式且並非藉由限制的方式而例示說明於所附圖式的圖之中，於該等圖式中，類似的編號參照至相似的元件。
圖1為根據一實施例之帶有於第一與第二晶粒上的電力傳送元件的一3-D堆疊式面對背(face-to-back)封裝的一剖面側視圖；圖2為根據一個實施例之一替代的堆疊式面對背封裝的一剖面側視圖；圖3為根據一個實施例之一堆疊式面對面 (face-to-face)封裝的一剖面側視圖；圖4為根據一個實施例之一替代的堆疊式面對面封裝的一剖面側視圖；圖5為根據一個實施例之形成於一晶粒的一凹部中的磁性核心電感器的一剖面側視圖；圖6為根據一個實施例之形成於帶有斜角側壁的一晶粒的一凹部中的磁性核心電感器的一剖面側視圖；圖7為根據一個實施例之形成於一晶粒的細孔中的磁性核心電感器的一剖面側視圖；圖8為根據一個實施例之安裝於一基材的堆疊式面對背封裝的一剖面側視圖；以及圖9為根據一個實施例之含帶有被動元件的一封裝的一計算裝置的一方塊圖。
較佳實施例之詳細說明
在實施例中，亦被認知為磁性核心電感器(MCI)之具有磁性材料的電感器係集成於一3D堆疊處理器的一底部(非核心)晶粒。該堆疊處理器是用一拓樸結構，其特別適用於將一全整合式電壓調節器(Fully Integrated Voltage Regulator，以下稱FIVR)集成至晶粒中。該非核心晶粒包括例如輸入/輸出電路、一記憶體控制器、一電源控制單元、等等的非核心電路。一些實施例除了位在頂部(核心)晶粒上的多層MIM(金屬-絕緣-金屬)電容器之外，亦可包括位在該底部(非核心)晶粒之背側的高密度電容器，或者作為該等多 層MIM電容器的替代。由於該封裝需要的層數較少以及較少的設計限制，此方法簡化了封裝設計。此做法亦對於有效VIN(輸入電壓)去耦電容器的封裝開放更多的空間。雖然該底部(非核心)晶粒由於電感器的附加而被製作的更複雜，其係藉由通過FIVR電路與電感器之間的該底部晶粒來移除連接件而被簡化。
磁性核心電感器可被集成於該非核心(底部)晶粒的背側或前側其中一者。此態樣避免有來自於該頂部或底部晶粒的FIVR輸出進入該封裝而連接至位於該封裝內的電感器。其亦減少位在該非核心(底部)晶粒上的連接凸塊之數量。相較於該封裝中的ACI，位在底部晶粒上的該MCIs可提供二十或三十倍的較高電感密度以及明顯較小的體積與厚度，其減緩核心區域定比(scaling)的影響。對於位在該底部晶粒上以提供電源至位在該頂部晶粒上的FIVR設計而言，電感器的最佳位置是位在相同的底部晶粒中。高密度3D MIM電容器與平面MIM電容器亦可被加入至底部(非核心)晶粒的背部或前側上，以避免製造位在該頂部晶粒上的該多層MIM電容器的成本與複雜度。此外，藉由將MCI包括在與該FIVR相同的晶粒中，該FIVR可獨立於該封裝組合而被單獨測試。
圖1為一3D堆疊伺服器組態封裝102的剖面側視圖。有一封裝基材104或基材直接地或經由一插座被耦接至一電路板。該基材可為陶瓷、矽、積層層、或任何其他材質製成，以提供於基材的頂部表面的連接墊132、136以及 於基材的底部表面的連接墊130、134，以及提供該頂部與底部之間的連接佈線，以及於基材上或基材內的一些電路元件。一非核心晶粒106係連接至基材並且被設置於該基材上方。一核心晶粒108係耦接至該非核心晶粒並且被設置於該非核心晶粒上方。該非核心晶粒典型地對核心晶粒提供電源管理、輸入/輸出傳訊、以及其他用功能。雖然該底部的晶粒在此文中是指一非核心晶粒，任何其他類型的支援晶粒亦可被使用而執行類似功能，且該晶粒亦可被以不同的名稱稱之。該非核心亦可包括處理資源、無線電、放大器、或例如使用於一系統單晶片(SOC)中的其他類型之電路。
該核心晶粒使用一或更多集成於一晶粒上的處理核心來提供高速計算與處理功能。該核心晶粒係被附接為以電路122面向該基材，此允許一散熱器124被附接至於該核心晶粒的背側。可以針對不同功能而被最佳化的不同類型的核心，包括通用運算核心、數位信號處理核心、以及影像處理核心。這些晶粒的特定功能可被適用於配合不同的應用。可以有更多核心晶粒，並且可有額外的晶粒位於該非核心上方，用於例如記憶、輸入/輸出傳訊、共同處理、等等的其他功能。
對直接設置在其上方的核心供電的該非核心(底部)晶粒上的每一座槽(圖未示)有一FIVR模組(圖未示)。亦有對該非核心晶粒本身供電的FIVR模塊。不論被供電的元件，本文中呈現的技術可應用於針對FIVR元件的集成LC濾波元 件。此外，雖然本文中的描述是泛指FIVR，所描述的結構與技術亦可適用於其他類型的電壓調節器或電壓轉換器。電壓調節器可為一切換式電壓調節器(如所熟知的降壓電壓調節器)、一切換式電容電壓調節器、一充電泵、一低漏損電壓調節器、一線性電壓調節器或這些類型的電壓調節器的結合，例如一混合式切換電容器整合。並非所有這些類型的電壓調節器均使用電感器，但電容器是典型地被使用於所有的電壓調節器中來減少來自於電路切換的雜訊。被動裝置的特定選擇可適用於適合對應的電源供應電路。該用語「FIVR」之使用並不需要任何特定的電壓調節電路、連接件或元件。
該非核心晶粒106係附接至該基材，以便使該晶粒的前側面向該基材。此容許該晶粒的前側的電路120透過配對連接墊132、136而直接耦接至該基材。如前述，取決於特定應用，此電路可包括電力電路、計時電路、輸入/輸出電路、與其他電路。該核心晶粒相同地附接至該非核心晶粒，以便使該核心晶粒的前側面向該非核心晶粒的背側。此設置可視為如一F2B(前至背或面至背)結構。該核心晶粒的電路122直接地耦接至該非核心晶粒的背側，並且可使用TSVs(矽穿孔)或任何各種其他技術而連接至該非核心晶粒的電路。
一磁性核心電感器110係集成於該非核心晶粒的背側上，而高密度MIM電容器112係集成於該頂部晶粒中。該等電容器可使用包括多層平面設計的任何各種技術來形 成。來自於一外部電源(其典型地但不必然是在該電路板上)的該輸入電壓VIN係透過一墊134而被耦接至該基材104，並且透過基材連接件136而被耦接至例如一FIVR的一電壓調節電路114。該電壓調節器將電源耦接至MCI 110，並且接著透過該電容器112以對該核心晶粒的至少一部份提供電力。針對由該核心晶粒與該等連接件至該電容器的電流的返回路徑，是經由一基材連接件132通過該基材至一接地連接件GND 130通過該非核心晶粒與基材而循環返回。
該電壓調節電路係以一電晶體114來表示，以暗示供應至核心晶粒108的電力的一脈衝寬度調變(PWM)。在一些實施例中，被調節的電源供應將基於約一或更多被切換的功率電晶體以產生該輸入電壓的一可控制的占空比(duty cycle)。該切換功率電晶體的運作是由接收一控制信號以驅動電晶體閘極的一功率調節電路(圖未示)來控制。該電源供應脈衝接著被供應至該等電感器110與電容器112，以使得脈衝功率平均至一穩定電壓位準。其他形式的電源供應亦可被替代使用以適合於特定的核心晶粒。
雖然本文揭露為提供於FIVR或其他形式的電壓調節器的上下文，所描述的組態與實施例亦可應用於各種不同的電源供應電路與系統，以及應用於任何此類系統的被動元件。該電源供應電路114可為如前述的電壓調節器、一電壓轉換器、或任何其他形式的電源供應電路。相同地，雖然顯示一電感器110與一電容器112兩者，但被動元件的數量與類型及其與電路的連接亦可調整以適合特定的電源 供應電路。雖然僅有一個電壓調節器被顯示出，但亦可有針對該核心晶粒的每一處理核心的一或多個電壓調節器。亦可有對該非核心晶粒中的元件提供電力的電壓調節器。該核心晶粒可具有兩個或更多個相同或不同類型的處理核心。在一個實施例中，可以有36個核心被包括於一單一核心晶粒中，包括高速處理器、低功率處理器、影像處理器、加速與現場可程式化的閘陣列(Field Programmable Gate Array，FPGA)處理器。其他與額外的核心可取決於其特定的實施態樣而被使用。
圖1的封裝與任何其他的實施例可被加工以增加一覆蓋、一散熱器或某些其他或額外元件。或者，連接件可使用圍繞該非核心晶粒至該封裝的周長之連結線而達成。該等晶粒可被覆蓋於用以保護及穩定性的模塑料之中。如放大器、射頻元件以及數位信號處理器之額外的部件亦可增加於該封裝上或內。
圖2為一替代的堆疊伺服組態封裝202的一剖面側視圖，其中一電容器212已從一核心晶粒208被移至一非核心(底部)晶粒206的背側。該電容器可與電感器形成在相同的空間之中。該封裝具有一封裝基材204、或者有非核心晶粒的前側的電路220之基材，該非核心晶粒的前側的電路220係面向並且耦接至該基材204。該核心晶粒208的前側的電路222係耦接至該非核心晶粒的背側。
基材係直接或經由一插座而耦接至一VIN連接器234。該VIN係經由一電壓調節器214而被調節至位於該非核 心晶粒的背側的一電感器210。此電感器係類似於圖1的該電感器110而被構成並且放置。該電感器210係耦接至現位於該非核心晶粒的背側的一電容器212，以將電力發送至該核心晶粒並且最終經由該非核心晶粒206與該基材204循環返回至一GND連接件230。該電容器212於該非核心晶粒的放置更簡化該核心晶粒的構成，並且更簡化該非核心晶粒與該核心晶粒之間的連接。該電容器212可為一平面MIM電容或一3D MIM電容。
圖3為適合用於F2F(面對面)堆疊的一封裝的另一實施態樣的剖面側視圖。於此實施例中，該封裝302具有一基材304，其帶有電源、VIN、GND、與其他例如用於資料與控制的外部連接。一非核心晶粒306藉由其背側而耦接至基材。藉由矽通道338藉由晶粒的背側而連接基材至位於晶粒前側的電壓調節器314。或者，連接至電路320的連結線圍繞該非核心晶粒306外圍可被使用於連接至基材。該非核心晶粒的前側面向一核心晶粒308的前側。兩晶粒例如藉由一焊球格柵或微塊焊料格柵340連接。一電感器310形成於該非核心晶粒的前側介於該等焊料凸塊之間並且耦接於電壓調節器。一電容器312形成於該核心晶粒的前側，並且藉由一或更多焊球連接件而耦接至該電感器。該電容器接著耦接至形成一處理核心的晶粒的前側的電路。
在此範例中，該第一晶粒306的前側係被識別為包括透過光微影技術(Photolithography)與其他製程形成於晶粒上的電路320的該側。相同地，該第二晶粒308的前 側係被識別為包括形成於該第二晶粒的電路322的該側。
該等電感器310可以磁性材料形成例如MCIs(磁性核心電感器或具有磁性材料的電感器)，而該等電容器可形成為MIM(金屬-絕緣體-金屬)電容器。兩者可被成型於該非核心晶粒的前側或頂部，與電晶體同側。在圖3與圖4的實施例中，透過該等TSVs 338往VIN的電流相較於一TSV所承載之電壓調節器與該等電感器及電容器之間的電流將減少。在電壓調節器之前的電力具有較高的電壓與較低的電流。因而，相較於電感器位於基材中的一系統，需要較少的TSVs並且晶粒之間的信號具有較短距的行程。由於晶粒至晶粒的信號容易具有較少的緩衝與較少的增幅以及容易較為和諧，因此降低晶粒至晶粒的信號距離可以較低的成本來改善性能。
圖4為類似於圖3的一剖面側視圖，其中該電容器412從一核心晶粒408的前側被移至一非核心晶粒406的前側。此外，3D高密度電容器可結合於該非核心晶粒的前側以被電壓調節器使用以及位於非核心晶粒的背側以供輸入的Vcc至電壓調節器以去耦。
在圖4中，係使用與圖3的相同F2F組態。一封裝402具有一第一晶粒406，其耦接至一基材404並且位於該基材404上方。一第二晶粒408以F2F的組態而耦接至該第一晶粒，以便使該第一晶粒的電路420面向該第二晶粒的電路422。該第一晶粒包括例如一FIVR的一電壓調節器414、一或更多電感器410、以及一或更多耦接至電壓調節器的電容 器412。該等電感器與電容器係形成於第一晶粒的前側而介於連接第一晶粒與第二晶粒彼此的焊料凸塊之間。如圖3的範例中的此實施例中，至外部電源的孔338經由該第一晶粒至該第一晶粒的背側以連接至該基材。額外的孔348經由基材以經由焊料凸塊連接至外部電源供應器。因此，介於電壓調節器與對應的處理核心之間的連接是短的並且不需要任何貫通的矽穿孔。至外部電源的連接是相對長的。或者，連結線可沿著非核心晶粒的外圍使用而電性連接至基材。
於圖1至圖4中，該等電感器與電容器係設置於該等非核心與核心晶粒之間的間隙中。此空間的垂直高度典型的由該等兩晶粒之間的連接件的高度所決定。此等連接件可為金屬微塊連接件、焊料凸塊、模釘、超音波熱焊，或使用銅-銅、金-金或其他金屬或導電性聚合物、或捲帶製程(tape-and-reel process)的熱壓連結。使用例如超音波熱焊或楔型連結的導線連結，亦可被使用於連接該非核心晶粒至該基材。在某些實施例中，一小空間係產生於該非核心晶粒與該基材之間沒有金屬與金屬接觸的連結。於此空間中，一電性絕緣膠可使用作為一底部填充劑(underfill)。此底部填充劑提供較強的機械連接，提供一熱橋，並且確保焊料接合點不會因晶片的差溫接合而應力集中。此底部填充劑亦藉由導熱而分散晶片之間的熱膨脹失配。
取決於該等電感器與電容器的結構以及所需要的電感(L)、電容(C)以及其他數值，電感(L)與電容(C)元件的高度可能大於由微塊連接件形成的垂直間隙。為提供電感 (L)與電容(C)元件更多空間，凹部可形成於適當晶粒的對應表面。電感(L)與電容(C)元件可接著形成於或設置於此等凹部之中。
圖5示出形成於一晶粒的一凹部之中的一磁性核心電感器的一範例。相同的方法可被應用於電容器與其他類型的電感器。該晶粒502以剖面圖示出。一缺口504已被切割於晶粒中而具有一側壁512與一底層510。該缺口係藉由蝕刻、鑽孔、雷射加工或其他將材料由晶粒移除以形成凹部或凹陷的製程而形成為一凹部或凹陷。此缺口增加由頂部晶粒至非核心晶粒的缺口的底層之間的距離。取決於該封裝組態，此積體被動元件可被嵌入於底部晶粒的背側甚或前側的一或更多的不同缺口中。
如圖所示，一磁性核心電感器為506係形成於或位於該缺口。該電感器具有受磁性核心材料514圍繞的銅線圈516。該電感器可以任何不同的方式形成。該電感器裝置可為帶狀電感器、螺旋電感器、螺線管電感器、環狀電感器(torus inductor)、形成於一蝕刻入矽的V槽中的一電感器，或可為一耦接電感器或轉換器。在一些實施例中，磁性材料的下半部先沉積。銅導體形成於下半部上方，並且接著沉積一上半部。一絕緣體可被使用以將銅導線與磁性材料隔離。該等電感器係耦接至導線軌跡(圖未示)，該等導線軌跡由該缺口橫越至該非核心晶粒的一適當導線軌跡或焊料凸塊。此導線容許該電感器於一側被耦接至該電壓調節器以及於另一側被耦接至一或更多電容器，或者耦接至任何 基於應用可能需要的其他元件。
圖6為再一變化的剖面側視圖，其中位於一矽晶粒602中的一缺口604可呈錐狀以改善一電感器608的磁性材料614的階梯覆蓋，其改善該電感器的品質因數。該缺口具有一底面610以及一側壁612，但於本實施例中，該側壁係形成一角度，以便使該側壁朝向該缺口的底面逐漸變細小。接著藉由將核心材料直接覆蓋缺口的底面上方並且往上至缺口呈角度的側壁，而將磁性核心材料614沉積於下半部。此將藉由提供磁通量較佳的路徑而改善電感器的階梯覆蓋以及性能。銅線616形成於核心的下半部上方，並且接著電感器的上半部係形成於銅線上方。如圖所示，每一缺口可具有適於容置單一電感器的尺寸。形成缺口的製程可用以控制電感器的尺寸。如圖5所示，導線軌跡可以沉積或以任何其他方式形成以將電感器連接至其他元件。
高密度電容器亦可形成於矽晶粒的表面。圖7示出一矽晶粒702。細孔704可被蝕刻至該非核心晶粒702的前側或背側之中，如所示出的形成一列平行通道或凹槽。該等通道可接著與例如氮化鈦(TiN)、氮化鉭(TaN)、銅(Cu)或其他需要的材料的一第一導體層708排列。該第一導體層可接著被例如三氧化二鋁(Al2O3)、二氧化鉿(HfO2)、氮化矽(SiN)、二氧化矽(SiO2)或其他需要的介電材的一介電層710所覆蓋。該介電層可接著被相同或不同於第一層708的材料的一第二導體層712所覆蓋。在圖7的實施例中，該等細孔完全以第二導體層填滿。用於以3D開溝或平坦表面形成該 些層的沉積技術包括原子層沉積(ALD)、電鍍、化鍍、化學氣相沉積(CVD)、濺鍍、以及蒸發。
形成的MIM電容器由於其材料的大部分已嵌入切入晶粒中的細孔，因而於晶粒之間占用非常小的垂直空間。金屬與絕緣體的交替層可被形成以產生一特定的電容。此等電容器可被形成於如圖2與圖4中的非核心上或如圖1與圖3中的核心晶粒上。此等可被用於一電壓調節器輸出。此等亦可被使用於微晶片的輸入電壓VIN以作為去耦電容器。該介電層的厚度可被調整以針對分別來自於輸出電壓的輸入電壓而適應較高的電壓。
圖8為一3D堆疊F2B封裝802的部分的剖面側視圖，該封裝802包括使用面對背堆疊集成於3D堆疊系統的磁芯電感器810與3D MIM電容器812。該等電感器與電容器兩者均嵌入於一底部晶粒806的背側以形成一自然通道，該通道從位在底部晶粒的一電路層816的一FIVR電路至頂部晶粒的一電路層818的一負載。
一再分配層822可形成於晶粒的背側，以在底部晶粒806的TSVs 820與在頂部晶粒808的微型凸塊824之間連接電感器與電容器。該等TSVs將該等電感器與電容器連接至位在底部晶粒的前側的電壓調節器。特定線路層826可被用於將電感器810連接至電容器812。底部晶粒亦耦接至一基材804以連接至外部元件。再分配層822亦可被使用作為一散熱件以幫助移除由該非核心晶粒產生的熱。一散熱器(圖未示)可增設以與該非核心晶粒的外周接觸。該非核心晶 粒可製作為大於核心晶粒，以提供與非核心晶粒較簡單的物理接觸。
本文揭露所述的該堆疊封裝提供重要的益處。作為一實施例，對於需要符合於一個核心的電路外型(Foorprint)的FIVR LC過濾元件，區域尺寸的考量是緩和的。藉由將LC過濾元件成型或定位於底部晶粒上或內，可在沒有於較簡單的基材上施加較高精度，以及沒有在高速密集摩擦技術處理核心上消耗過多空間的情況下獲得高Q值。
藉由將LC元件從基材移除，基材的成本與複雜度減少。此外，該非核心晶粒上用於支撐該FIVR的連接凸塊的需求較少。與其在基材使用連接凸塊連接LC被動元件，該FIVR使用該頂部晶粒中的TSVs與再分配層而直接連接LC元件。則不再需要於該頂部晶粒之基材的該等連接凸塊。
圖9示出根據本發明的一計算裝置100的一個實施態樣。該計算裝置100容裝一系統板2。該板2可包括數個元件，包括但不限於一處理器4以及至少一通訊封裝6。該通訊封裝係耦接至一或更多天線16。該處理器4物理地與電性地耦接至該板2。
端視其應用，計算裝置100可包括其他可或不物理地與電性地耦接於板2的元件。這些其他元件包括但不限於揮發性記憶體(例如DRAM)8、非揮發性記憶體(例如：ROM)9、閃存記憶體(圖未示)、圖形處理器12、一數位信號處理器(圖未示)、一加密處理器(圖未示)、一晶片組14、一天線16、一顯示器18例如一觸控顯示器、一觸控顯示器控 制器20、一電池22以及一音訊編/解碼器(圖未示)、一影像編/解碼器(圖未示)、一功率放大器24、一全球定位系統(GPS)裝置26、一羅盤28、一加速度計(圖未示)、一陀螺儀(圖未示)、一揚聲器30、一相機32，以及一主儲存裝置(例如硬碟)10、光碟機(CD)(圖未示)、數位光碟機(DVD)(圖未示)等等。這些元件可連接於系統板2，設置於系統板或與任何其他元件結合。
該通訊封裝6可為無線及/或有線通訊，用於至計算裝置100的資料之傳輸以及來自計算裝置100的資料之傳輸。該用語「無線」及其衍生可用於描述電路、裝置、系統、方法、技術、通訊頻道等，其可經由調變電磁輻射的使用經由非固態媒體傳輸資料。該用語並非指相關裝置不包含任何電線，雖然在某些實施例中其不包含。通訊封裝6可執行任何多種無線或有線標準或協定，包括但不限於Wi-Fi(IEEE 802.11 family)、WiMAX(IEEE 802.16 family)、IEEE 802.20、長期演進技術(long term evolution，LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍芽、乙太網路衍生物，以及任何其他指定為3G、4G、5G或以上的無線與有線協定。計算裝置100可包括多數通訊封裝6。例如，一第一通訊封裝6可用於例如Wi-Fi與藍芽的短距無線通訊，而一第二通訊封裝6可用於例如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO及其他的長距無線通訊。
該等晶片的任一或更多可被封裝為如本文前述 或者該等晶片的數個可使用如前述用於傳輸電源的被動元件整合於單一封裝中。
在不同的實施態樣中，該計算裝置100可為一伺服器、一工作站、一膝上型電腦、一小筆電、一筆記型電腦、一薄型筆電、一智慧型手機、一平板電腦、一個人數位助理(PDA)、一薄型行動電腦、一行動電話、一印表機、一掃描機、一顯示器、一機上盒、一娛樂控制單元、一數位相機、一可攜式音樂撥放器，或一數位錄相影機或稱為物聯網(IoT)的裝置。在更進一步的實施態樣中，該計算裝置100可為任何其他電子裝置，例如筆、皮夾、手錶、或其他處理數據的器具。
實施例可實施為一或更多記憶體晶片、控制器、中央處理單元(CPUs)、微晶片或使用一母板、一特定應用積體電路(ASIC)，及/或一現場可程式化閘陣列(FPGA)連接的積體電路的一部分。
所提及的「一個(one)實施例」、「一(an)實施例」、「範例實施例」、「變化實施例」等等，係指本發明所述的實施例可包括特定的特徵、結構或特性，但並非每一實施例必然會包括該特定的特徵、結構或特性。更進一步的，某些實施例可具有某些、全部或沒有所述的該些特徵於另一實施例。
在以下的描述與請求項中，所謂「耦接」及其衍生意思可被使用。「耦接」係用以指兩個或更多元件共同運作或彼此交互作用，但可或不需有物理干涉或電子元件於 其之間。
除非在特定情況下，請求項所使用的「第一」、「第二」、「第三」等，係指一共通的元件，其僅表示相同的元件在不同的狀況所稱，並非意指所述的元件並須依照所述的順序，不論是時間的、空間的，或順序上的，或任何其他方式。
圖式與前述說明提供了範例實施例。本領域技術人員將可理解，一或更多的所述元件將可結合為單一功能元件。相反的，特定的所述元件可被分開為多種功能性元件。一個實施例的元件可增設於另一實施例。例如，本文所述的製程順序可被改變且不限於本文所述的方式。再者，任何流程圖的動作不需以圖示的順序實施；也不是所有的動作都必須被實施。此外，該些不需依附於另一動作上的動作，亦可與其他動作同時執行。實施例的範圍並不為這些特定的範例所限制。數種變化，例如結構、尺寸以及使用的材料的差異，不論說明書中是否敘明，都有其可能性。實施例的範圍廣度至少如以下所附加的請求項。
以下的範例是關於更進一步的實施例。不同實施例的不同特徵可多樣地與所包括的以及其他排除的某些特徵結合以適合於不同的應用。部分實施例關於一實施例，其具有：一基材；一第一晶粒覆蓋該基材地耦接於該基材，該第一晶粒包括一耦接至該基材以接收電源的電源供應電路；一第二晶粒具有一處理核心並且於該第一晶粒上方而耦接至該第一晶粒，該第一晶粒耦接至該電源供應電路以 提供該處理核心電力；以及一被動裝置，其附接至該第一晶粒並且耦接至該電源供應電路。
在更進一步的實施例中，該第一晶粒具有一前側以及一背側，該前側包括面對該基材的電路，該背側面對該第二晶粒，且其中該被動裝置係位於該背側。
在更進一步的實施例中，係使用貫通該第一晶粒的矽穿孔來將該第一晶粒的該前側耦接至該第二晶粒。
在更進一步的實施例中，係使用連結線來將該第一晶粒的該背側耦接至該基材。
在更進一步的實施例中，該第一晶粒具有一前側以及一背側，該前側包括面對該第二晶粒的電路，該背側面對該基材，且其中該被動裝置係位於該第一晶粒的該前側。
在更進一步的實施例中，該第一晶粒使用焊料凸塊連接於該第二晶粒，且其中，該被動裝置位於該第一晶粒的前側並介於該等焊料凸塊之間。
在更進一步的實施例中，係使用微凸塊、焊釘、超音波熱焊或熱壓連結來將該第一晶粒連接至該第二晶粒，且其中該被動裝置係位於該第一晶粒的該前側並介於該等連結之間。
在更進一步的實施例中，該第一晶粒的前側具有介於該等焊料凸塊之間的一凹部，且其中該被動裝置係位於該凹部內部。
在更進一步的實施例中，該凹部具有一底層與側 壁，其中該等側壁係朝向該底層逐漸變細，且其中該被動裝置具有位於該等錐狀的側壁的一磁性層。
在更進一步的實施例中，該第一晶粒為一矽晶粒，且其中該被動裝置為一電感器，其帶有形成於該矽晶粒的一表面上的磁性材料。
在更進一步的實施例中，該被動裝置包括耦接至電感器的電容器，該等電容器係形成於該第一晶粒的一表面上。
在更進一步的實施例中，該第一晶粒為一矽晶，且其中該等電容器為金屬-絕緣體-金屬電容器。
在更進一步的實施例中，該被動裝置包含3D金屬-絕緣體-金屬電容器、平面金屬-絕緣體-金屬電容器、磁性核心電感器、帶狀電感器、螺旋電感器、線圈電感器、或環狀電感器的任一者。
在更進一步的實施例中，該基材包含耦接於一外部電源供應器與該電源供應電路之間的電源去耦合電容器。
在更進一步的實施例中，該電源供應電路包含一電壓轉換器、一切換電容電壓轉換器、一電壓調節器、或一全積體電壓調整器。
部分實施例關於一種堆疊晶粒封裝其具有：一核心晶粒，其具有多個處理核心；一非核心晶粒，其針對每一處理核心具有一電源供應電路，每一電源供應電路獨立地耦接至每一各自的處理核心以供應電力至各自的處理核 心；一封裝基材，其耦接至該非核心晶粒以從一外部源接收電力並且提供電力至該非核心晶粒的該等電源供應電路；多個矽穿孔，其等貫通該非核心晶粒以將資料訊號從該核心晶粒傳送至該封裝基材；以及多個被動裝置，其等附接至該非核心晶粒且介於該非核心晶粒與該非核心晶粒之間，每一耦接至一電源供應電路。
在更進一步的實施例中，該非核心晶粒具有面對該核心晶粒的一前側，且其中該等多個被動裝置為附接至該非核心晶粒的該前側之電容器。
部分實施例關於一種計算裝置，其具有一系統板、連接至該系統板的一通訊封裝、以及一處理器封裝，其具有：一基材；一非核心晶粒，其耦接至該基材並於該基材上方，該非核心晶粒包括耦接至該基材以接收電力的一電源供應電路；一核心晶粒，其具有一處理核心並且耦接至該非核心晶粒並於該非核心晶粒上方，該非核心晶粒係耦接至該電源供應電路以對該處理核心提供電力；以及一被動裝置，其附接至該非核心晶粒並且耦接至該電源供應電路。
在更進一步的實施例中，該非核心晶粒具有一前側以及一背側，該前側包括面對該核心晶粒的電路，該背側面對該基材，其中該被動裝置係位於該非核心晶粒的該前側中的一凹部之中。
在更進一步的實施例中，該非核心晶粒具有面向該基材的一前側以及面向該核心晶粒的一背側，其中該被 動裝置係附接至該晶粒的該背側，其中該電源供應電路係形成於該非核心晶粒的該前側並且耦接至該被動裝置以及經由貫通該非核心晶粒的該背側的貫孔而耦接至該核心晶粒。

Claims (20)

  1. 一種電子設備，其包含：一基材；一第一晶粒，其於該基材上方而耦接至該基材，該第一晶粒包括耦接至該基材以接收電力的一電源供應電路；一第二晶粒，其具有一處理核心並且於該第一晶粒上方而耦接至該第一晶粒，該第二晶粒耦接至該電源供應電路以對該處理核心提供電力；以及一磁性核心電感器，其附接至該第一晶粒並且耦接至該電源供應電路以及耦接至該處理核心，其中，於剖面中，該磁性核心電感器係位於一凹部內，該凹部在該第一晶粒內但未貫通該第一晶粒。
  2. 如請求項1所述的電子設備，其中該第一晶粒具有一前側以及一背側，該前側包括面對該基材的電路，該背側面對該第二晶粒，且其中該被動裝置係位於該背側。
  3. 如請求項2所述的電子設備，其中係使用貫通該第一晶粒的矽穿孔來將該第一晶粒的該前側耦接至該第二晶粒。
  4. 如請求項2所述的電子設備，其中係使用連結線來將該第一晶粒的該背側耦接至該基材。
  5. 如請求項1所述的電子設備，其中該第一晶粒具有一前側以及一背側，該前側包括面對該第二晶粒的電路，該背側面對該基材，且其中該磁性核心電感器係位於該第一晶粒的該前側。
  6. 如請求項5所述的電子設備，其中係使用焊料凸塊來將該第一晶粒連接至該第二晶粒，且其中該磁性核心電感器位於該第一晶粒的該前側並介於該等焊料凸塊之間。
  7. 如請求項5所述的電子設備，其中係使用微凸塊、焊釘、超音波熱焊或熱壓連結來將該第一晶粒連接至該第二晶粒，且其中該磁性核心電感器係位於該第一晶粒的該前側並介於該等連結之間。
  8. 如請求項6所述的電子設備，其中該第一晶粒的前側具有介於該等焊料凸塊之間的該凹部。
  9. 如請求項8所述的電子設備，其中該凹部具有一底層與側壁，其中該等側壁係朝向該底層逐漸變細，且其中該磁性核心電感器具有位於該等錐狀的側壁的一磁性層。
  10. 如請求項1所述的電子設備，其中該第一晶粒為一矽晶粒，且其中該磁性核心電感器具有形成於該矽晶粒的一表面上的磁性材料。
  11. 如請求項1所述的電子設備，其進一步包含耦接至電感器的電容器，該等電容器係形成於該第一晶粒的一表面上。
  12. 如請求項11所述的電子設備，其中該第一晶粒為一矽晶粒，且其中該等電容器為金屬-絕緣體-金屬電容器。
  13. 如請求項11所述的電子設備，其進一步包含額外的被動裝置，該等被動裝置包含3D金屬-絕緣體-金屬電容器、平面金屬-絕緣體-金屬電容器、磁性核心電感器、帶狀電感器、螺旋電感器、線圈電感器、或環狀電感器的任一者。
  14. 如請求項1所述的電子設備，其中該基材包含耦接於一外部電源供應器與該電源供應電路之間的電源去耦合電容器。
  15. 如請求項1所述的電子設備，其中該電源供應電路包含一電壓轉換器、一切換電容電壓轉換器、一電壓調節器、或一全積體電壓調整器。
  16. 一種堆疊晶粒封裝，包含：一核心晶粒，其具有多個處理核心；一非核心晶粒，其針對每一處理核心具有一電源供應電路，每一電源供應電路獨立地耦接至每一各自的處理核心以供應電力至各自的處理核心；一封裝基材，其耦接至該非核心晶粒以從一外部源接收電力並且提供電力至該非核心晶粒的該等電源供應電路；多個矽穿孔，其等貫通該非核心晶粒以將資料訊號從該核心晶粒傳送至該封裝基材；以及多個磁性核心電感器，其等附接至該非核心晶粒且介於該非核心晶粒與該核心晶粒之間，每一個耦接至一電源供應電路以及耦接至該處理核心，其中，於剖面中，該等多個磁性核心電感器係位於一或多個凹部內，該等凹部在該非核心晶粒內但未貫通該非核心晶粒。
  17. 如請求項16所述的堆疊晶粒封裝，其中該非核心晶粒具有面對該核心晶粒的一前側，且進一步包含附接至該非核心晶粒的該前側之電容器。
  18. 一種計算裝置，包含：一系統板；一通訊封裝，其連接至該系統板；以及一處理器封裝，具有一基材，一非核心晶粒，其於該基材上方而耦接至該基材，該非核心晶粒包括耦接至該基材以接收電力的一電源供應電路，一核心晶粒，其具有一處理核心並且於該非核心晶粒上方而耦接至該非核心晶粒，該非核心晶粒係耦接至該電源供應電路以對該處理核心提供電力，以及一磁性核心電感器，其附接至該非核心晶粒並且耦接至該電源供應電路以及耦接至該處理核心，其中，於剖面中，該磁性核心電感器係位於一凹部內，該凹部在該非核心晶粒內但未貫通該非核心晶粒。
  19. 如請求項18所述的裝置，其中該非核心晶粒具有一前側以及一背側，該前側包括面對該核心晶粒的電路，該背側面對該基材，其中該凹部係在該非核心晶粒的該前側中。
  20. 如請求項18所述的裝置，其中該非核心晶粒具有面向該基材的一前側以及面向該核心晶粒的一背側，其中該被動裝置係附接至該晶粒的該背側，其中該電源供應電路係形成於該非核心晶粒的該前側並且耦接至該磁性核心電感器以及經由貫通該非核心晶粒的該背側的貫孔而耦接至該核心晶粒。
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