TWI642799B - Sputter target for forming magnetic recording film and method of manufacturing the same - Google Patents

Sputter target for forming magnetic recording film and method of manufacturing the same Download PDF

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Publication number
TWI642799B
TWI642799B TW103139844A TW103139844A TWI642799B TW I642799 B TWI642799 B TW I642799B TW 103139844 A TW103139844 A TW 103139844A TW 103139844 A TW103139844 A TW 103139844A TW I642799 B TWI642799 B TW I642799B
Authority
TW
Taiwan
Prior art keywords
phase
sputtering target
sputtering
alloy
mol
Prior art date
Application number
TW103139844A
Other languages
English (en)
Chinese (zh)
Other versions
TW201531575A (zh
Inventor
荻野真一
Original Assignee
日商Ｊｘ日鑛日石金屬股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｘ日鑛日石金屬股份有限公司 filed Critical 日商Ｊｘ日鑛日石金屬股份有限公司
Publication of TW201531575A publication Critical patent/TW201531575A/zh
Application granted granted Critical
Publication of TWI642799B publication Critical patent/TWI642799B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C2202/00—Physical properties
    • C22C2202/02—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
TW103139844A 2013-11-22 2014-11-18 Sputter target for forming magnetic recording film and method of manufacturing the same TWI642799B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013241537 2013-11-22
JPJP2013-241537 2013-11-22

Publications (2)

Publication Number Publication Date
TW201531575A TW201531575A (zh) 2015-08-16
TWI642799B true TWI642799B (zh) 2018-12-01

Family

ID=53179455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103139844A TWI642799B (zh) 2013-11-22 2014-11-18 Sputter target for forming magnetic recording film and method of manufacturing the same

Country Status (6)

Country Link
JP (2) JP6125661B2 (ja)
CN (2) CN105793465B (ja)
MY (2) MY191633A (ja)
SG (1) SG11201602163YA (ja)
TW (1) TWI642799B (ja)
WO (1) WO2015076190A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023079857A1 (ja) * 2021-11-05 2023-05-11 Ｊｘ金属株式会社 Ｆｅ－Ｐｔ－Ｃ系スパッタリングターゲット部材、スパッタリングターゲット組立品、成膜方法、及びスパッタリングターゲット部材の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06212419A (ja) * 1993-11-25 1994-08-02 Japan Energy Corp Ｗ−Ｔｉ合金ターゲット
US20040110035A1 (en) * 2002-10-29 2004-06-10 Sung-Chul Shin High density magnetic recording medium using FePtC thin film and manufacturing method thereof
WO2013046882A1 (ja) * 2011-09-26 2013-04-04 Jx日鉱日石金属株式会社 Ｆｅ－Ｐｔ－Ｃ系スパッタリングターゲット
US20130213803A1 (en) * 2010-12-20 2013-08-22 Jx Nippon Mining & Metals Corporation Fe-Pt-Based Sputtering Target with Dispersed C Grains
US20130306471A1 (en) * 2011-01-31 2013-11-21 Kouichi Ishiyama Sputtering target for forming magnetic recording medium film and method for producing same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
JP5590322B2 (ja) * 2010-11-12 2014-09-17 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
CN102087858B (zh) * 2010-11-26 2012-07-18 山西师范大学 一种梯度复合磁记录介质及其制备方法
JP5912559B2 (ja) * 2011-03-30 2016-04-27 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲットの製造方法
JP6212419B2 (ja) * 2014-03-17 2017-10-11 株式会社Ｓｕｂａｒｕ エンジンの排気凝縮水排出装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06212419A (ja) * 1993-11-25 1994-08-02 Japan Energy Corp Ｗ−Ｔｉ合金ターゲット
US20040110035A1 (en) * 2002-10-29 2004-06-10 Sung-Chul Shin High density magnetic recording medium using FePtC thin film and manufacturing method thereof
US20130213803A1 (en) * 2010-12-20 2013-08-22 Jx Nippon Mining & Metals Corporation Fe-Pt-Based Sputtering Target with Dispersed C Grains
US20130306471A1 (en) * 2011-01-31 2013-11-21 Kouichi Ishiyama Sputtering target for forming magnetic recording medium film and method for producing same
WO2013046882A1 (ja) * 2011-09-26 2013-04-04 Jx日鉱日石金属株式会社 Ｆｅ－Ｐｔ－Ｃ系スパッタリングターゲット

Also Published As

Publication number Publication date
JPWO2015076190A1 (ja) 2017-03-16
MY177997A (en) 2020-09-29
TW201531575A (zh) 2015-08-16
CN105793465B (zh) 2019-03-22
CN109943814A (zh) 2019-06-28
CN109943814B (zh) 2021-04-20
CN105793465A (zh) 2016-07-20
SG11201602163YA (en) 2016-04-28
MY191633A (en) 2022-07-04
JP2017197840A (ja) 2017-11-02
JP6125661B2 (ja) 2017-05-17
WO2015076190A1 (ja) 2015-05-28
JP6484276B2 (ja) 2019-03-13

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