TWI642122B - 導電連接、具有此種連接的結構、及製造方法 - Google Patents

導電連接、具有此種連接的結構、及製造方法 Download PDF

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Publication number
TWI642122B
TWI642122B TW104115149A TW104115149A TWI642122B TW I642122 B TWI642122 B TW I642122B TW 104115149 A TW104115149 A TW 104115149A TW 104115149 A TW104115149 A TW 104115149A TW I642122 B TWI642122 B TW I642122B
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Taiwan
Prior art keywords
solder
ball
melting
conductive
component
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TW104115149A
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English (en)
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TW201606893A (zh
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雷傑許 卡克爾
席普倫 亞梅卡 烏若
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英凡薩斯公司
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K3/06—Solder feeding devices; Solder melting pans
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    • B23K3/0623—Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
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Abstract

在一些實施例中，可利用一或更多個焊球來連接不同結構，可增加焊接連接的高度間距比，當該連接形成在一結構上時及/或當該連接附接至另一結構時，僅一部分的焊球的表面熔化。在一些實施例中，可藉由中間焊球(140i)來接合非焊料球。焊料連接可由焊料卡固層(1210)圍繞，且可凹進該層中的孔(1230)中。同時，也提供其他特徵。

Description

導電連接、具有此種連接的結構、及製造方法
本案係關於導電連接，例如焊料連接。此種連接例如用於半導體積體電路的封裝，且具體用於附接積體電路或封裝基板至另一積體電路或基板。封裝基板的範例包含佈線基板(例如，印刷電路板)與中介層。
焊料廣泛地應用於此種連接，因為例如焊料連接可容易地解除(藉由熔化焊料)，以修復或更換故障的部件，而無需更換整個封裝。
第1A與1B圖例示積體電路110A至結構110B的焊料附接。結構110B可為另一積體電路，或印刷電路板(PCB)，或一些其他的封裝基板，或者可為積體電路封裝。電路110A具有電接觸(「接觸墊」)120A，其必須直接焊接至結構110B的接觸墊120B。此種直接的焊料附接稱為「覆晶(Flip-chip)」附接。(或者，接觸墊可藉由不連續的導線來互連，但是覆晶附接是較佳的，因為它們減小組件的尺寸，且它們降低電 阻、寄生電容、與寄生電感。)
如第1A圖所示，焊球140形成於墊120A上。(焊球可替代地形成於墊120B上或墊120A與120B兩者上。)然後，結構110A與120B帶至一起，使得焊料140實體接觸於接觸墊120A與120B。此組件放置至烘箱中，以熔化焊料。焊料接著冷卻且重新固化，以將墊120A附接至對應的墊120B。
在製造與後續的電路操作期間，可藉由各種力，將焊料連接140側向拉動。此種力的通常來源為熱膨脹：結構110A、110B可因為加熱或冷卻而膨脹或收縮，且如果兩結構具有不同的熱膨脹係數(CTE)，結構110A可膨脹或收縮與結構110B不同的量。焊料連接140可能破裂或斷裂、損害或破壞電性功能。焊料連接的可靠度因此是設計製造製程的重要目標。
藉由增加焊料連接的高度H，焊料連接可製做得更可靠。然而，增加高度也會增加焊球的寬度W，因為焊料熔化時容易變成球狀。因此，相鄰的墊120A必須間隔得更遠，才不會彼此短路。墊120B之間的最小距離也增加了。值得注意的是，相鄰的墊120的中心之間的距離不可小於相鄰的焊球的中心之間的距離(亦即，焊球間距)；該間距因此大於或等於W。增加的間距非所欲地增加了組件的尺寸，且可能降低電性功能(例如，由於要求較長的互連線(未圖示)及/或由於使電路較慢及/或較耗電)。
因此，吾人希望增加高度H而不需對應增加W，亦即，增加H/W的比率(此比率大約等於高度間距比，因為焊球寬度W大約等於最 小的焊球間距)。為了增加此比率，焊料連接可做成堆疊的焊球。第2圖顯示結構110的接觸墊120上的四個焊球140.1、140.2、140.3、140.4的堆疊210。堆疊可藉由可取得自Pac Tech(Packaging Technologies USA,Inc.，美國的封裝技術公司)的SB2-Jet型的焊料噴射設備220來製造。參見例如E.Zakel等人於ICEP 2002發表的「High Speed Laser Solder Jetting Technology for Optoelectronics and MEMS Packaging(用於光電與微機電系統封裝的高速雷射焊料噴射技術)」，在此以引用之方式將其併入。在此設備中，熔化或至少軟化的焊球140一個個通過噴嘴240而供應。氣體壓力係用於推進與放置每一焊球於接觸墊120的頂部上或另一先前放置的焊球的頂部上。當每一焊球放置時，焊球由雷射源250熔化，且然後冷卻，以附著至接觸墊120或下方的焊球。焊料堆疊210確實比單一焊球具有較高的H/W比，但是H/W增加得有限，因為焊球140在噴射處理期間被壓扁(平坦化)。平坦化係作用來增加W與降低H。例如，如果每一焊球140具有如同半徑250μm的球的相同體積，則兩焊球140.1、140.2的堆疊僅可具有400μm或更小的高度H，而非500μm。焊球寬度W高於250μm，所以針對兩焊球的堆疊，高度間距比小於400/250=1.6，或每球小於0.8。
在焊料堆疊形成之後，結構110附接至另一結構(如同第1B圖)。在此結構至結構的附接中，焊料堆疊回流(熔化)，且H/W比率在回流期間可進一步降低。例如，450μm直徑的焊球可變成僅360μm高，需要大約600μm的墊至墊的間距(除非焊料由遮罩橫向限制，未圖示)。整個焊料堆疊甚至可能崩塌。為了抵消此現象，一個焊球140可由具有較高熔化溫度之高熔化溫度材料製成，相較於另一焊球來說，以避免在結構至結 構的附接期間熔化。此種技術敘述於2002年9月24日頒發給Sakurai等人的美國專利號第6,455,785號中。在該技術中，底部焊球140.1由金製成，且上方的焊球由銦製成(銦具有比金更低的熔化溫度)。每一球藉由加熱金屬導線的尖端而形成(金或銦線，藉由高壓放電或氣體火焰來加熱)：熔化的尖端形成放置在結構上的球，且然後切斷該導線。導線殘餘維持在球的頂部上作為小突伸部，且這些突伸部藉由壓在焊球上的板而平坦化。然後，在結構至結構件的附接中，僅銦球回流，金球維持固體，以防止倒塌。
第3A、3B圖例示另一種凸塊連接技術，來自Xingshen Liu的博士論文，標題為「Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips(電源晶片的焊料接合互連的可靠性評估與處理)」(博士論文，2001(URN etd-04082001-204805)，Virginia Tech Digital Library，Chapter II)，在此以引用之方式將其併入。首先，焊球140.1從焊膏形成於接觸120A上。然後，較高熔化溫度的球140.2放置在球140.1上，且焊料140.1回流。球140.2並未熔化。焊球140.3從焊膏形成於另一結構110B的接觸墊120B上。焊料140.3具有比140.1低的熔化溫度。然後，結構110A放置在結構110B上，且焊料140.3回流，以附接至焊料140.2。焊料140.1與140.2在此處理中並未熔化。
形成導電連接的進一步改良為本案所關注者。
此章節總結了本發明的一些範例性實施。
在一些實施例中，為了形成焊料連接，焊球的表面僅一部分熔化。因此，高度間距比在一些實施例中增加，或者至少較不可能減少。例如，在一些實施例中，每個焊球的高度寬度比H/W大於0.8，且可為1或接近1。此技術可用於形成焊料堆疊，但是也可用於形成單一球連接(亦即，僅具有一個焊球的連接，如第1B圖)。
焊料連接可包含非焊料成分，例如具有非焊料核心之焊料塗覆球，非焊料核心在任何階段都不熔化(核心可為高熔化溫度的金屬及/或聚合物及/或絕緣體)。
在一些實施例中，焊料或非焊料連接(例如，銅柱)在結構110A中的圍繞的介電質層的頂部處凹陷。另一結構(例如，110B)具有突伸的導電柱係插入該凹陷並且接合至該連接。該凹陷協助將結構110A的連接對準於結構110B的柱。此外，如果使用焊料，該凹陷限制了焊料，且因此協助避免與附近的連接之電性短路。限制焊料也強化了該連接與柱之間的接合，因為如果不限制焊料，則焊料會流走且浪費掉。其他實施例與變化例都在由所附申請專利範圍所界定之本發明的範圍內。
110‧‧‧結構
110A‧‧‧結構(積體電路)
110B‧‧‧結構
110C‧‧‧結構
110D‧‧‧積體電路
120‧‧‧墊
120A、120A.1、120A.2、120B、120C.1、120C.2‧‧‧接觸墊
140‧‧‧焊球
140.1、140.2、140.3、140.4‧‧‧焊球
140C‧‧‧中心核心
140i、140i.1、140i.2‧‧‧中間焊球
140S‧‧‧焊料殼
210‧‧‧堆疊
210.1、210.2‧‧‧連接
210E.1‧‧‧第一端
210E.2‧‧‧第二端
220‧‧‧焊料噴射設備
240‧‧‧噴嘴
250‧‧‧雷射源
510、510.1、510.2‧‧‧區域
510B‧‧‧區域
520、520A、520B、520.1、520.2‧‧‧擠出
1210‧‧‧焊料卡固層
1210.1‧‧‧層
1210.2‧‧‧模製化合物
1230‧‧‧孔
1232‧‧‧側壁
1240‧‧‧接觸柱
1250‧‧‧材料
1310‧‧‧導電互連
1310C‧‧‧互連線
1504‧‧‧第一線
1510‧‧‧第一部分
1510E.1‧‧‧第一端
1510E.2‧‧‧第二端
1520‧‧‧第二部分
1520P‧‧‧位置
1530‧‧‧第三部分
1530E.1‧‧‧第一端
1530E.2‧‧‧第二端
1610‧‧‧底端
1620‧‧‧中間
1910‧‧‧模具
1920‧‧‧模製空腔
1924‧‧‧界面
1928‧‧‧模具空腔界面
A‧‧‧圓形區域
D1‧‧‧高度
D2‧‧‧距離
Dh‧‧‧深度
H‧‧‧高度
Hsq‧‧‧預熔化高度
P‧‧‧點
Ph‧‧‧高度
SqWmax‧‧‧最大擠出寬度
W‧‧‧寬度
Wb‧‧‧寬度
Wh‧‧‧直徑
第1A、1B、2、3A、3B圖為先前技術之製造期間與之後的結構的垂直橫剖面。
第4A、4B、4C、5A、5B、6A、6B、7、8、9、10、11A、11B、12A、12B、13、14A、14B、14C、15、16A、16B、17A、17B、18、 19A、19B、20、21A、21B、21C、21D、22、23圖為本案較佳實施例之製造期間與之後的結構的垂直橫剖面。
此章節中的實施例非用以限制本發明。本發明由所附申請專利範圍來界定。
第4A、4B圖之實施例為焊球140至接觸墊120的附接。結構110可為積體電路、中介層、剛性或柔性的佈線基板、及/或上述用於結構110、110A、110B的任何類型、及/或上述類型的組合(例如，封裝)。接觸墊120顯示在結構110的頂表面處，但是可在任何表面處：本發明並不限於任何特定的定向。焊料140僅在其底部區域510處熔化。焊料140的其餘部分在附接期間並未熔化，所以焊球的高度較穩定。可藉由電磁輻射所提供的熱來執行該熔化，例如藉由雷射筆250。在一些實施例中，雷射250發射持續時間為1微秒至數毫秒的紅外線輻射脈衝(例如，1064nm的波長)，但是本發明並不限於任何的脈衝持續時間、波長、或其他參數。然而，選擇脈衝與其他參數，以避免熔化焊球的其餘部分。合適的參數取決於焊料材料、區域510的大小、以及可能的其他因素，且此種參數可由實驗決定，而無需過度實驗。參見例如美國專利號第5,977,512號，1999年11月2日頒發給Azdasht等人，敘述了用於熔化整個焊球的雷射參數；在此以引用之方式將此專利併入。在一些實施例中，雷射束(Laser beam)藉由合適的光學系統來聚焦。也可使用聚焦的或未聚焦的非雷射光。光束可從一側到達區域510處，如同第4A圖所示，或者從另一方向；在一些實施例中， 光源位於結構110之下，且光束行進通過該結構至區域510。本發明不限於特定的加熱能量來源、或來源位置、或其他參數。
在一些實施例中，熔化區域510為焊料140的體積的至多50%(取熔化之前的體積)。在一些實施例中，區域510為整個體積的1%至50%。在這些實施例的一些中，焊球的直徑在5μm與1mm之間(直徑為最大的預熔化尺寸：焊球可為或可不為完美的圓形)。例如，直徑可為25μm至500μm，可能不超過250μm，可能不超過175μm。這些範圍並非限制。在一些實施例中，區域510為深度低於焊球的預熔化或熔化或後熔化直徑或高度的50%之表面區域，或甚至低於25%，或低於10%。
焊球140放置在接觸墊120上，使得區域510實體接觸於該墊。在放置焊球之前及/或之後，提供加熱能量至區域510。然後，區域510冷卻並且重新固化，以將焊球熔接至接觸墊。接觸墊120在熔接處理中並未熔化。墊120上的焊料140的放置可藉由任何合適的手段來實行，可能使用傳統的方法，例如焊料噴射，或者例如推動焊料140通過對準於墊120之的模板開口(Stencil’s opening)(焊料可藉由橡膠滾軸、活塞、氣體來推動，可能僅藉由其本身的重量，或其他合適的力)。其他放置方法也可使用。
在一些實施例中，在熔接處理中，由於焊料140的重量及/或由於可能施加至焊球及/或接觸墊的額外壓力(例如，藉由氣體或橡膠滾軸等)，一些熔化或軟化的焊料被擠出。「擠出(Squeeze-out)」的區域520(第4B圖)在焊料140與接觸墊120的交界處橫向向外突伸。在一些實施例中，區域520為連續的突伸，其在焊料連接140的所有側部上橫向突伸。區 域520可為或可不為完美的圓形。
第4C圖為焊料140的放大視圖。擠出520的形狀取決於區域510的大小與溫度、施加至球140的壓力、以及可能的其他參數。在一些實施例中，擠出520的預熔化高度Hsq為焊料140的高度H的大約1%至50%。在一些實施例中，區域510的深度小於焊球直徑的50%，所以Hsq小於H的50%。最大擠出寬度SqWmax為該擠出之上的焊料部分的寬度Wb的1%至150%。該擠出的頂端處的焊料寬度SqWmin為未擠出的焊料寬度Wb的1%至100%。
如上述，本發明並不限於任何特定的定向。例如，在附接處理或隨後的任何階段，焊料140可在接觸墊之下或在一些其他的定向中。
在第5A與5B圖中，焊料140已經附接至結構110A的接觸墊120A，並且正要附接至結構110B的墊120B，以將該等墊電連接在一起。至墊120A的附接係藉由第4A-4B圖的方法來實行(該擠出係顯示在520A處)，但是可替代使用其他的方法，包含先前技術的方法。如同第5A圖所示，相對於墊120A之焊球的區域510B熔化，而焊料的其餘部分未熔化。結構110A與110B係配置成使得區域510B實體接觸於墊120B。在區域510B放置在墊120B上之前及/或之後，提供加熱能量(例如，雷射或上述的其他類型)至區域510B。區域510B冷卻並且重新固化，以形成該附接。擠出520B可形成在與墊120B的焊料接合處。擠出520B可具有與上述第4B-4C圖的擠出520相同的形狀(在所有側部上為連續的橫向突伸)與尺寸。擠出520B可或可不具有與擠出520A相同的形狀與尺寸。
在第6A、6B圖的範例中，部分熔化(亦即，熔化少於焊球的所有焊料)係用於形成焊料堆疊。首先，焊球140.1附接至結構(未圖示)的墊120，例如上面相關於第4A圖所述的。在此範例中，至墊120的附接係藉由第4A-4B圖的方法來實行(該擠出係顯示在520.1處)，但是可替代使用先前技術的方法。然後，面離墊120之焊球的區域510熔化，而焊料的其餘部分未熔化。未熔化的焊球140.2放置在球140.1上，以實體接觸於區域510。焊球140.2不會熔化，除了可能被球140.1轉移的熱輕微熔化之外。在放置焊球140.2之前及/或之後，藉由上述的任何加熱源(例如，雷射或非雷射電磁源)來提供加熱能量至區域510。然後，區域510冷卻且固化，以形成附接。擠出520.2(第6B圖)可形成於兩焊球的接合處。擠出520.2的形狀與尺寸，與上述第4B-4C圖的擠出520可相同或不相同，且本質上可為不規則的或規則的。擠出520.2的形狀與尺寸，與擠出520.1可相同或不相同。
第7圖顯示類似的技術(部分熔化)，但是該熔化係在焊料140.2上執行。熔化的區域510形成焊料140.2的部分，焊料140.2的其餘部分未熔化。焊料140.1也未熔化，除了可能被球140.2轉移的熱輕微熔化之外。球140.2放置成使得其區域510實體接觸於球140.1。在放置球140.2於球140.1上之前及/或之後，藉由上述的任何加熱源來提供加熱能量。當焊料重新固化時，該結構如第6B圖。
第8圖顯示類似的技術，但是焊球140.1、140.2兩者都部分熔化。熔化的區域分別顯示於510.1、510.2處；其餘的焊料未熔化。在放置球140.2於球140.1上之前及/或之後，提供加熱能量。當焊料重新固化 時，該結構如同第6B圖。
在第9圖中，使用完全熔化(藉由相關於第4A圖所上述的任何合適的加熱源)的中間焊球140i來形成附接。焊球140.1與140.2未熔化，除了可能被中間焊球轉移的熱輕微熔化之外。在一些實施例中，球140i的預熔化尺寸(直徑或最大尺寸)及/或高度為球140.1、140.2的最小預熔化尺寸及/或高度之1%至100%；及/或球140i的預熔化體積為球140.1、140.2的最小預熔化體積之1%至100%。這些尺寸並無限制。在一些實施例中，球140i只有在球140.2附接至140.1的期間熔化一次。例如，在一些實施例中，在放置球140i於球140.1上之前及/或之後，提供熔化的熱給球140i；當球140i仍然熔化時，第二球140.2放置於球140i上。然後，球140i藉由冷卻而固化。最後的結構如第6B圖，其中中間球140i形成擠出520.2。
在其他實施例中，當附接至下球140.1時，中間球140i熔化，然後，中間球固化，且之後，中間球再次熔化，以附接球140.2。球140.1、140.2並未熔化，除了可能在與球140i的接合處及/或附近有熔化之外，如上述。
第9圖的方法可用於連接焊球140至接觸墊，如第10圖所示(焊球140藉由中間球140i.1而連接至墊120A，且之後藉由中間球140i.2而連接至墊120B；最後的結構可為如同第5B圖)。
焊球140、140i的任何一或更多者可具有非焊料的中心核心140C(第11A、11B圖)，其塗覆有焊料殼140S。第11A與11B圖例示在第6A、6B圖的處理中使用此種球。在附接之後(第11B圖)，核心140C可或可不彼此接觸。核心140C大體上並未熔化，亦即，區域510大體上限於焊 料殼140S；如果此種球係使用作為中間球140i(第9-10圖)，則只有焊料殼140S熔化(可能整個殼都熔化)。核心140C在此處理中並未顯著熔化；例如，核心140C可為金屬(例如，銅或鎳)，具有比殼140S較高的熔化溫度，或者核心140C可為聚合物或絕緣材料，例如聚酰亞胺；而殼140S可為具有熔化溫度低於400℃的材料(例如，錫類的焊料或銦)等。
上述的方法可用於形成導電連接作為任何數量的球的堆疊。上述的方法可結合於其他方法，例如，先前技術的方法；例如，在相同的堆疊中，一或更多個球可藉由根據本發明的一些實施例的方法來附接，而一或更多個其他的球可藉由先前技術的方法來附接。連接高度會更穩定。例如，如果使用部分熔化的焊球來製做焊料堆疊，且每一球140的每一區域510的預熔化高度小於球的高度的50%，則堆疊高度將大於球的預熔化高度的總和的50%。類似地，如果藉由如同第9圖的中間焊球140i將一序列的焊料或非焊料球140附接至彼此，且每一球140之上(或之下)有一個中間焊球140i，且每一中間球140i的預熔化高度小於球140的高度的總和的50%，則堆疊高度將大於預熔化高度的50%。此外，如果每一區域510或每一中間球140i的預熔化高度小於個別球140的高度的25%，則最終的焊料高度會大於預熔化高度的75%。更一般而言，如果每一區域510或每一球140i的高度小於個別球140的高度的X%，則堆疊高度將大於預熔化高度的(100-X)%。
因利而言，在一些實施例中，用於整個堆疊中的球140的所有焊料(亦即，焊料140或140i或140S)可由相同材料或具有相同熔化溫度的不同材料製成。藉由限制電磁輻射的散佈(例如，藉由使用雷射及/或聚 焦的輻射)來限制熔化區域。使用相同的材料可簡化製造處理。但是，本發明不限於此種實施例。
結構至結構的附接可藉由根據本發明的方法(例如，如同第5B或10圖)或先前技術的方法(例如，藉由在烘箱中的焊料回流)來執行。值得注意的是，可能有多個接觸墊120A(可能數百或數千個)必須附接至對應的墊120B，且所欲的是，當所有的焊料連接的頂端都在相同平面中時(吾人使用用語「焊料連接」來包含具有非焊料成分的連接，例如，具有非焊料核心140C或具有由中間焊球140i接合的非焊料球)，同時形成此種附接。然而，藉由如同第4A-11B圖中限制電磁輻射的散佈，可能不方便執行多個區域510或中間球140i的同時加熱，因為必須同時傳送至區域510或球140i的大輻射功率可能通過該等結構的一者或通過其他中間部件(未圖示)。因此，在一些實施例中，藉由在烘箱中的焊料回流來執行結構至結構的附接。為了在此處理中穩定焊料高度，在烘箱回流之前，焊料可卡固在焊料卡固層1210中(第12A圖)。焊料卡固層1210(通常為介電質)曝露焊料連接140的頂部，但是橫向圍繞且密封每一焊料連接的其餘焊料，以在第12B圖的階段的回流期間，維持焊料的形狀(與高度)。(在第12A-12B圖的範例中，焊料連接係如同第6B圖，但是該技術可與上述其他類型的連接一起使用)。焊料卡固層1210在不允許焊料140熔化的溫度時形成。在一些實施例中，焊料卡固層1210為模製的化合物(亦即，固化的模製的化合物)，通常為介電質，例如環氧樹脂，藉由傳統的技術形成，例如，傳遞或壓縮模製(transfer or compression molding)、薄膜輔助模製(film-assist molding)、或剝線模製(strip molding)。焊料卡固層1210最初 密封整個焊料140，並且可能(但非必要)實體接觸所有側部(所有周圍)上的焊料140；但是稍後，層1210被「修除」，亦即，部分移除(例如，藉由使用鋁漿或其他化學品的濕式噴砂、乾式噴砂、雷射燒蝕、或其他技術)，以曝露焊料堆疊210的頂部。參見例如美國專利號第6,838,637與6,635,209號，在此以引用之方式將兩者併入。
在結構至結構的附接期間，焊料在不會損壞焊料卡固層1210的溫度之下回流。例如，在一些實施例中，焊料熔化溫度為217℃，焊料卡固層為模製的化合物，形成於不超過120℃至200℃的溫度之下，且在結構至結構的附接中，焊料在烘箱中以245℃至255℃回流。這些範例並非限制。
在一些實施例中，焊料卡固層1210包含多個層係配置來提供希求的特性，例如低的結合的介電常數。例如，在第13圖中，焊料卡固層1210包含層1210.1與稍後沉積的模製化合物1210.2。在一些實施例中，層1210.2具有高介電常數(例如，4.5或更高)；且層1210.1具有較低的介電常數(例如，低於4，可能低於3)。層1210.1的非限制性範例包含二氧化矽與聚對二甲苯(聚對二甲苯例如敘述在美國專利號第7,923,823號中，其於2011年4月12日頒發給Mengel等人，且在此以引用之方式將其併入；聚對二甲苯的介電常數可為大約2.5。)。
一開始，層1210.1、1210.2的每一者覆蓋包含焊料堆疊的整個結構。然後，修除這兩層，以曝露焊料堆疊210且提供第12A圖的結構。在一些實施例中，層1210.1、1210.2兩者都在相同的處理中修除(例如，藉由濕式噴砂或上述的其他技術)。
在另一範例中(第14A圖)，層1210.2先修除(對層1210.1為選擇性的)，以曝露層1210.1的頂部。然後，移除堆疊210之上的層1210.1(對層1210.1為選擇性的)(第14B圖)。此處理在結構110A之上的焊料堆疊之上的模製化合物1210.2中形成孔1230，換句話說，焊料堆疊210在模製化合物1210.2的頂表面處凹陷。如同所示，堆疊210延伸通過層1210中的通孔並且實體接觸於堆疊210；此通孔的頂部為具有凹側壁1232的孔1230。但是，本發明並不限於任何側壁輪廓。
此結構隨後附接至結構110B(第14C圖)。在所示的範例中，結構110B設有在接觸120B上的突伸的接觸柱1240。每一柱可為焊球、焊料堆疊、銅柱、或銅柱上的焊料、或一些其他類型。在焊料回流期間或之前，將柱1240插入孔1230中。孔1230的協助，可將柱1240對準於連接210。另外，在回流期間，孔1230限制了熔化的焊料，且因此減低橫向相鄰的接觸120之間電性短路的可能性。在一些實施例中，接觸120之間的間距可因此減小。(在一些實施例中，模製層1210.2並未濕化焊料，以進一步協助限制焊料的橫向流動。)
在一些實施例中，每一孔1230的深度Dh為0.5至30微米，且較佳地，為2至10微米；且直徑Wh(當從第14B圖的頂部觀看時，亦即，從第14C圖的底部觀看)為1至200微米，且較佳地，為2至100微米。「直徑」為每一孔的頂部處的最大橫向尺寸；孔可為或可不為圓形。這些細節並非限制。
在一些實施例中，因為孔1230，只要最短的柱1240可到達連接210，組件可容忍柱1240的不均勻高度：實際上，較長的柱1240在焊 料回流期間將使較多焊料210位移，但是如果孔1230足夠寬於該等柱，多餘的焊料可容納在柱1240周圍的孔1230中。針對相同的理由，該組件可容忍連接210的不均勻高度(Non-uniform height)。
在一些實施例中，突伸的柱1240係為用上述的方法製成的焊料連接。例如，它們可形成如同第12A圖：參見第15圖。因此，突伸的的堆疊(如同第12A圖)與凹陷的堆疊(如同第14B圖)可由類似的處理來製成，簡化所需的工具與材料清單。柱1240也可為其他類型，包含美國專利號第8,618,659號中所述的打線接合，其於2013年12月31日頒發給Sato等人，在此加以引用。
如需要，結構110B可接合至圍繞孔1230的區域中的焊料卡固層1210.2。此接合可藉由任何合適的方法，例如黏著劑(未圖示)。間隔物(未圖示)可插入接合區域中的層1210.2與結構110B之間，及/或黏著劑可作用為間隔物。
即使每一焊料連接僅具有一個焊球，也可製成第14B圖的凹陷的焊料連接。此外，可使用焊料塗覆的球(如同第11B圖)。
形成凹陷的焊料連接之另一種技術為使用在焊料回流之前或期間昇華的昇華材料。在一些實施例中，可蒸發的材料可用來取代昇華材料。在另一實施例中，昇華與可蒸發的材料可用適當的濃度連同焊料粒子一起結合。(當在此使用時，「昇華」指的是從固體直接轉變至蒸汽；「蒸發」或「汽化」指的是通過液相而轉變為蒸汽。)在第16A圖中，在形成焊料卡固層1210之前，此種材料1250的球放置在每一焊料堆疊210的頂部上。在一些實施例中，此種材料1250的球藉由噴射來放置，其中此種 材料1250的球及/或下方的焊料完全或部分熔化。在放置操作中，材料1250加熱很短的時間，至不足以昇華或蒸發材料1250的溫度。(用語「昇華或蒸發」意指：昇華與蒸發的任一者或兩者可同時存在)。
在第16A圖中，右邊此種材料1250的球為球形或幾乎球形，但是左邊此種材料1250的球在焊料堆疊210的側部周圍(在一些實施例中為所有側部周圍)倒塌。這些細節並無限制。
焊料卡固層1210可藉由上述的任何技術或其他技術來形成。在一些實施例中，焊料卡固層1210最初覆蓋此種材料1250的球，但是稍後修除，以曝露此種材料1250的球。在所示的實施例中，修除的層1210具有平坦的頂表面，但是在一些實施例中會獲得非平坦的表面。在一些實施例中，層1210具有如同第14B圖的孔1230，並且具有材料1250的球凹進個別的孔中，且這些孔藉由材料1250的後續昇華或蒸發而擴大，如下所述。
材料1250的球曝露之後，在加熱操作中將材料1250的球昇華或蒸發，以提供(或擴大)孔1230(第16B圖)。昇華可藉由在真空環境中(例如，70kPa或甚至更高的真空)執行加熱操作而增強。替代地或額外地，可藉由提高溫度來增強該蒸發(例如，高於150℃；如果使用真空，則合適的溫度會較低)。在一些實施例中，在真空環境中在還原的周遭中執行加熱操作。在昇華或蒸發步驟期間(亦即，加熱操作)，焊料可或可不熔化。在一些實施例中，加熱操作在結構至結構的附接(參見第14C圖)期間或之前隨即(亦即，在焊料回流期間)在烘箱中執行。每一孔1230的側壁1232可為凹的；側壁完全橫向圍繞該連接。本發明不限於特 定的側壁輪廓。
每一孔1230為其中層1210實體接觸於連接210之通孔的頂部。在一些實施例中，每一此種材料1250的球的直徑為1至300微米，且較佳地為3至100微米；下方的連接210的直徑Wh可改變，從2至300微米，且較佳地從3至150微米(當從頂部觀看時)；每一孔1230的範例性深度Dh為對應的連接210的直徑的2%至80%，且在頂部處的孔的直徑為對應的連接210的直徑的5%至80%。在第16B圖中的左邊的孔中，連接210在孔1230的底部處向上突伸。在一些實施例中，這種向上突伸的高度Ph為連接210的高度的0.1%至50%，且較佳地為5%至30%。這些細節並無限制。
在一些實施例中，連接210由非焊料材料製成；例如，它們可為銅或鎳柱。
材料1250可如上述、與其所欲的用途一致的任何材料。因此，在一些實施例中，材料1250在室溫時為固體，且當此種材料1250的球放置於下方的表面上(亦即，在連接210上)時，可藉由熱來軟化，以在放置期間且甚至在冷卻之後，可靠地附著至連接210的頂表面。如果任何原生氧化物可形成於連接210的頂表面上，則材料1250可選擇成也可良好地黏著至原生氧化物。在一些實施例中，當此種材料1250的球放置在連接210上時，材料1250與連接210之間的良好附著可藉由以低於連接210的頂表面的熔化溫度之溫度來軟化材料1250而獲得。在一些實施例中，軟化可藉由將不會損壞該結構的其他部分之電磁輻射(例如，雷射)來執行。在一些實施例中，材料1250的底部軟化，而頂部未軟化。在一些實施例中，連接210的頂部軟化或熔化，以執行放置。
材料1250可在如同上述的合適的溫度時昇華。範例性可昇華的材料包含蠟；高分子量聚乙二醇(PEG)；聚環氧乙烷(PEO)；與聚氧乙烯-聚丙烯嵌段共聚物(polyoxyethylene-polypropylene block copolymers)。這些類別的材料的分子量可在100與8000000之間變化。在一些實施例中，蠟與PEG或PEO結合。在另一範例中，除了石蠟之外，可使用萜類(terpenoid)，例如樟腦1,7,7-三甲基雙環[2.2.1]庚烷-2-酮、樟腦-10-磺酸、與其各種類似物，且可使用相關的一部分。這些材料適於連接210的許多合成物，包含焊料與非焊料的合成物，其包含錫、鉛、銅、鎳、銀、金、鉑、與其組合、以及其他材料。
第17A與17B圖例示另一實施例，其中材料1250包含於堆疊中的每一球140中。更具體地，每一球140具有以下結構：塗覆有材料1250的焊料核心140。針對具有上述的球140與140i的任何直徑之核心140C，每一球上的塗層材料1250的範例性厚度為1至5微米，但是這些尺寸並非限制。塗層材料1250可藉由任何合適的技術來形成，例如藉由利用固化時可提供塗層材料1250的液體來噴塗核心140C；或者藉由將核心140C浸漬至固化時可提供塗層材料1250的非固體物質。(在其他實施例中，僅一些球140具有此結構，而其他球140可為相關於第1A-16B圖所上述的類型)。替代地，或額外地，材料1250可混合於球140的任何一或更多者(可能是全部)中的焊料(例如，冶金焊料網絡內)。每一球140的放置可使用上述的技術或其他技術來執行。例如，可藉由噴射部分或完全熔化或軟化的材料1250來執行該放置，可能利用球140的接合處的擠出部分；在一些實施例中，球140的焊料部分(例如，焊料核心140C)在球的放置期間並未熔 化。
然後，如同上述地形成焊料卡固層1210，以曝露至少頂部的球140。然後，加熱該結構，例如在烘箱中，且較佳地在真空中，以昇華或蒸發至少部分(可能是全部)的材料1250；然後，升高烘箱溫度，以使焊料140C回流(第17B圖)，且焊料140C下沉，離開孔1230。選擇材料1250，使得在焊料熔化溫度時、之上或之下，材料1250藉由昇華(亦即，直接從固相)或經由熔化(亦即，從液相)轉變成蒸汽。熔化的或未熔化的材料1250首先可通過熔化的焊料流至頂部，且然後轉變成蒸汽。因此，在一些實施例中，材料1250具有低於焊料140C的密度。材料1250的範例性密度為0.6至3kg/cm3。在一些實施例中，熔化的或未熔化的材料1250並未先流至頂部就轉變成蒸汽。如同上述，在一些實施例中，材料1250的昇華溫度低於焊料140C的熔點。
材料1250可為或可不為電性絕緣，但是所產生的焊料連接為導電的，因為所有或實質上所有的材料1250都不在了。在一些實施例中，一些材料1250留在最終結構中，其數量並不會妨礙最終結構的電性功能(可能不會明顯地改變焊料連接的電阻值)。
合適的材料1250可如上述作用的那些材料。具體而言，在一些實施例中，材料1250良好地附著至核心140，形成可預測大小的塗層。當加熱至合適的溫度時，頂部球140的材料1250附著至下方緊鄰的球的材料1250，且在冷卻之後，附著係維持良好。在一些實施例中，僅加熱兩球中的一個球。在具有材料1250的球放置在下方球或接觸墊之未被材料1250覆蓋的表面上(例如，全部都焊料的球上)的那些實施例中，選擇材 料1250以提供與下方球的表面之良好附著。在一些實施例中，即使被放置的球上以及球所放置的表面上存在有氧化物，如果此種氧化物可在放置之前或期間形成，也可獲得良好的附著。
合適的材料包含相關於第16A圖所上述的蠟、多元醇、PEO、萜類(terpenoids)、以及其他材料。這些材料的至少一些具有適當低的密度，如同上述，它們可製做得適當的軟，以在低於許多焊料的熔化溫度之溫度時放置(例如，針對一些材料為120℃)；它們可具有如同上面界定的低密度；且它們可在相當低的溫度時昇華，在一些範例中為60至200℃之間；此種昇華溫度適於用於具有高於200℃的熔點的焊料，舉例來說。
第17B圖顯示擠出部分520，擠出部分520為最初由材料1250填充但是稍後由焊料140C填充的區域。該擠出可或可不存在。
在每一孔1230處的層1210的側壁1232可為下凹；側壁完全橫向圍繞該連接。每一孔1230為其中層1210實體接觸於連接210之通孔的頂部。本發明並無限制於此種細節。
在一些實施例中，選擇材料1250的數量，以提供孔1230的所欲尺寸。當在材料1250的昇華或蒸發期間焊料下沉時，一些焊料可留在焊料卡固層1210的側壁上，以窄化孔1230。如果層1210未被焊料濕化，則此窄化可為最小的。每一孔1230的範例性深度為1至200微米，且較佳地為3至30微米，且在頂部處的孔的直徑為對應的連接210的直徑的5%至80%。在每一連接210中，材料1250的體積量相對於連接210為大約3%至50%，且較佳地為5%至25%。這些細節並非限制。
連接210的單一堆疊可包含第4A-17A圖的球140與塗層材料1250的任何組合。例如，在第18圖中，每一堆疊結合了第17A圖的焊球140與第16A圖具有材料1250的球。頂部球140包含可昇華或可蒸發的塗層材料1250，且材料1250的中間球為完全可昇華或可蒸發的。不同的可昇華或可蒸發的化合物或合成物可用於相同堆疊中的不同球中(用語「合成物」在此使用時包含純的化合物)。所有球的材料1250稍後昇華或蒸發，如同上述，留下如同第16B或17B圖中的孔1230。孔1230與側壁1232的範例性輪廓與尺寸可為如同上述的，但是這些輪廓與尺寸並非限制。
值得注意的是，在一些實施例中，一些球140並未熔化。例如，參見第10圖，如果球140藉由中間焊料140i而附接至相鄰的接觸墊或球，則球140可為高熔化溫度的材料(可能為焊料)或非熔化的材料(例如，熱固性聚合物，它在高溫時分解而非熔化)。中間球140i在一些實施例中可由材料1250製成，當球140i昇華或蒸發時，上方與下方的球(或上方的球與下方的接觸墊)係熔接在一起。
在一些實施例中，焊料熔化溫度係使得即使在結構至結構的附接之後，藉由傳統的方法(例如，烘箱中的回流)，所有的連接都可斷開，而不會損壞結構。烘箱回流可比有限散佈的輻射更方便。在一些實施例中，熔化溫度低於450℃。
上述的附接方法可用於許多封裝處理，且可能的益處係例示在第19A-19B圖中。在第19A圖中，結構110A為佈線基板，例如使用矽及/或金屬及/或剛性及/或柔性絕緣體及/或其他材料所製成的中介層。結構110A具有接觸墊120A.1與較小的接觸墊120A.2，兩接觸墊由所需的導電互 連1310的網絡互連。晶粒(例如，半導體積體電路，例如，矽電路)110B係覆晶連接至接觸墊120A.2。在範例性實施例中，晶粒110B為200μm厚；結構110A具有5列的接觸墊120A.1，間距為240μm。晶粒連接可藉由焊料、熱壓、或其他技術來實行，其可或可不使用本發明的一些實施例。
晶粒可選擇性地底部填充(底部填充未圖示)。
在晶粒附接之前，焊料可或可不已經沉積(例如，電鍍或蒸發或印刷)於墊120A.1上。然後，堆疊210(第19B圖)藉由上述任何方法而形成在接觸墊120A.1上。在此例圖中，藉由部分熔化的技術，每一堆疊210具有兩個焊球噴射且熔接在一起。預熔化的焊球直徑為175μm，且焊料堆疊上升高於晶粒110B。在一些實施例中，多於兩個焊球(且甚至多於三個焊球)可熔接在一起，以提供175微米的高度。本發明並不限於每一堆疊中的焊球數量或任何特定的高度。
焊球的數量與直徑可根據需要而選擇。(在一範例中，預熔化直徑為25μm，且每一焊料堆疊具有多於10個焊球。)在一些實施例中，每一堆疊中的所有底部焊球都在任何上方的球之前形成；在其他實施例中，整個堆疊210連續一個個形成。
然後，焊料卡固層1210可藉由例如剝線模製(strip molding)或薄膜輔助模製(film-assist molding)來形成。利用鋁漿的濕式噴砂可用於曝露頂部處的焊料堆疊210。在每一堆疊具有多於兩個焊球的範例性實施例中，焊料堆疊的高度間距比可為2：1。
另一種結構，例如，積體電路晶粒或晶圓或封裝基板或封裝，可附接至焊料堆疊210的頂部。在第20圖的範例中，頂部結構包含結 構110C(例如，積體電路或佈線基板)，結構110C附接至形成作為安裝在結構110C上的晶粒與覆晶之積體電路110D。模製化合物(未圖示)可之後提供來密封結構110A上的整個組件。結構110C具有附接至晶粒110D的接觸墊120C.2，並且具有與焊球140.1接觸的接觸墊120C.1，焊球140.1之後焊接至結構110A的墊120A.1上所形成的堆疊210。額外或替代地，可設置柱或銷於結構110C的底部上，用於結構110C與下方的封裝之間的結構支架。在此種實施中，柱或銷可塗覆有焊料140.1。此外，柱或銷可配置來插入至一些下方的焊料堆疊210中。當利用第14A至18圖中例示的技術來實施時，此種銷或柱可額外協助結構110C至下方的封裝之對準。
在第20圖中，焊料140.1與焊料堆疊210在烘箱中回流，以附接結構110C至結構110A；焊料堆疊210在回流期間受到焊料卡固密封劑1210的限制。結構110C中的互連線1310C連接墊120C.1與墊120C.2至彼此，如同所需的。在一些實施例中，結構110A包含邏輯積體電路(例如，電腦處理器)，且結構110C包含電腦記憶體。此範例並非限制。
如圖所示，焊料連接210可彼此不同：最左邊的連接210.1具有小的焊球。左邊的第二堆疊210.2具有大的焊料塗覆的球，如同第11A-11B圖中(例如，具有銅或一些其他較高熔化溫度的材料或非熔化材料製成的核心，例如，固化的聚合物或絕緣體)。其餘的焊料連接係由完全由焊料組成的大球製成。這些範例並非限制。
如上述，相關於第4A-20圖的上述技術的使用可增加高度間距比，每個焊球的高度間距比可為0.8或更大。
本發明的一些實施例促進具有結構之間不同長度的連接之 組件的製造。此種製造能力對於提供積體電路封裝中的小尺寸與短電路路徑係所欲的；參見例如2013年12月31日頒發給Sato等人的美國專利號第8,618,659號，在此以引用之方式將其併入。本發明的一些實施例中獲得的範例封裝係顯示於第21A圖中。該封裝包含連接結構110A至結構110B的短連接210.1，以及連接結構110A至結構110C的較長連接210.2。結構110A、110B、110C的每一者可為已封裝的或未封裝的積體電路或封裝基板。結構110C可或可不藉由額外的連接而連接至結構110B。每一此種連接可為焊球、焊料堆疊、焊料導線、打線接合(例如，前述Sato等人的專利第8,618,659號中所述的或一些其他類型的導線)。具體地，連接可為如同第1A-20圖所述的。這些範例並非限制。
焊料卡固層1210橫向圍繞每一連接210.1、210.2。在一些實施例中，焊料卡固層1210為在特別設計的模具中在單一模製操作中製成的模製層(例如，環氧樹脂)。或者，焊料卡固層1210可為一或更多個薄膜與模製化合物(例如，第14B圖的1210.1、1210.2)的組合；模製化合物橫向圍繞每一短與長連接210.1、210.2；模製層係在單一模製操作中製成。在任一情況中，模製層沿著每一連接210的整個高度延伸(可能除了接觸墊的附近之外)。模製層可包含如同相關於第14B-18圖所上述的開口1230。
該結構可如下製造。首先，短連接210.1與長連接210.2藉由焊料噴射、印刷、打線接合或任何其他合適的方法而形成於個別的接觸墊120A.1、120A.2上(第21B圖)。然後，焊料卡固層1210的模製部分藉由例如傳遞模製(transfer molding)而形成於模具1910中(第21B圖)。(在所示 的實施例中，整個層1210在此模製操作中形成；在其他實施例中，在模製操作之前形成薄膜層)。模具1910的模製空腔1920較高於焊料連接210.2，焊料連接210.2較高於焊料連接210.1，以提供用於層1210的步階式輪廓。模製化合物注入空腔中並且固化。(範例性模製化合物包含熱塑性或熱固性化合物，例如樹脂(例如，環氧樹脂)。)所產生的結構取出空腔，係顯示在第21C圖中。在此階段，層1210覆蓋連接210。值得注意的是，層1210不具有任何界面，界面通常存在於具有由個別多個模製操作所形成的多個層之模製層中(界面分隔在不同的多個模製操作中製成的模製層)。然後，可能使用上述的標準技術(例如，乾式或濕式噴砂等)來拋光層1210。參見第21D圖。拋光操作可處理高連接210.2與低連接210.1之間的層1210的界面1924。此界面係由高與低連接之間的模具空腔界面1928(第21B圖)所形成。在一些實施例中，在模製步驟之後，界面1928為垂直壁，或稍微傾斜，以易於結構噴射；且因此，層1210在界面1924處具有垂直或接近垂直的步階，但是此垂直步階在拋光期間變得較不垂直，例如，90°角可能增加至例如100°或一些其他值，取決於處理參數，例如層1210的材料、層1210的各部分的尺寸、以及拋光操作。
之後，使用合適的技術(例如，如同先前技術)，結構110B、110C使其接觸墊附接至個別的連接210.1、210.2，以提供第21A圖的組件。
此技術可擴展至三個或更多個不同高度的連接。例如，結構可具有雙球焊料堆疊210的陣列、四球焊料堆疊的另一陣列、以及六球焊料堆疊的又另一陣列，其中每一堆疊中的所有焊球為相同尺寸。可能有 又不同的連接高度的焊料或非焊料連接之額外陣列。模製空腔可對應地具有不同的高度的三個或更多個區域，以在單一模製操作中產生模製層1210的對應步階輪廓。所有連接在單一拋光操作後，於頂部處露出。
在上述的焊料堆疊中，球140或140i或具有材料1250的球不必堆疊在彼此的頂部上：球可橫向延伸或延伸在任何其他方向中，以提供適當的互連。此外，連接可成叉狀；例如，單一球140可連接至相同或較小尺寸的兩個或更多個其他的球，且每一其他的球可為一或更多個球鏈的部分，每一鏈提供叉狀物的各別的叉部。叉部可產生自相同的接觸墊(類似於前述Sato等人的專利中的導線)。該等球可藉由印刷方法而沉積。例如，形狀如蠟球的材料1250可藉由固體油墨印刷機來沉積。
本發明的一些實施例提供一種製造方法，包含製造一連接(例如，堆疊210)，其實體接觸於一第一導電特徵(例如，接觸墊120)，該連接包含堆疊的構件(例如，每一構件可為焊球或焊料塗覆的球)，其中製造該連接包含執行一序列的附接操作，每一附接操作附接對應的構件(例如，附接單一球140)至先前的構件，其為第一導電特徵或該堆疊的先前的構件；其中，在至少一附接操作中，(A)、(B)與(C)的至少一者為真：(A)該對應構件的表面為焊料表面，其在附接操作中僅一部分熔化，該部分包含在附接操作中熔接於先前的部件之部分，焊料表面的其餘部分在附接操作中未熔化(例如，參見第7圖)；(B)該對應構件的至少一部分在附接操作中未熔化，且 先前的部件為：其表面為在附接操作中僅一部分熔化的焊料表面之先前的構件，該熔化部分包含在附接操作中熔接於對應構件的一部分，先前的構件的焊料表面的其餘部分在附接操作中未熔化(例如，參見第6A圖)；(C)該對應構件的至少部分在附接操作中未熔化，且先前的部件的至少部分也未熔化，但是中間構件的焊料表面(例如，中間球140i的表面)熔化，以熔接於對應構件與先前的部件。
在一些實施例中，第一導電特徵為半導體積體電路(例如，晶粒或晶圓)的接觸墊或附接至半導體積體電路的基板(例如，中介層或印刷電路板)的接觸墊。
在一些實施例中，該方法另包含：在形成該連接之後，附接該連接至第二導電特徵(例如，另一墊120)，其為半導體積體電路的接觸墊或附接至半導體積體電路的基板的接觸墊。
在一些實施例中，在每一附接操作中，(A)、(B)與(C)的至少一者為真。
在一些實施例中，該熔化係藉由電磁輻射束來執行。
在一些實施例中，(A)與(B)的至少一者為真，且針對具有熔化部分的每一焊料表面，焊料表面為連續的並且所有的焊料表面具有相同的熔化溫度。例如，整個焊料表面可為相同的材料。
在一些實施例中，(C)為真，且中間構件的預熔化體積為對應部件的預熔化體積的至多100%。
在一些實施例中，(1)與(2)的至少一者為真：(1)陳述(A)為真，對應構件具有核心，其在附接操作 中在焊料熔化的熔化溫度時並未熔化，且該核心在附接操作中並未熔化；(2)陳述(B)為真，先前的部件為具有核心的先前構件，核心在附接操作中在焊料熔化的熔化溫度時並未熔化，且該核心在附接操作中並未熔化。
在一些實施例中，核心在附接操作中實體接觸於熔化的焊料。例如，在第11A圖中，殼140S的熔化部分510可到達核心140C。
一些實施例提供一種方法，用於將一第一導電部件(例如，球140)附接至一第二導電部件(例如，另一球140或接觸墊120)，該方法包含：(1)熔化該第一導電部件的一表面的一第一部分而不熔化該第一導電部件的該表面的一第二部分(例如，其餘部分)，即使該第二部分的熔化溫度不高於該第一部分的熔化溫度，其中該第二部分為該第一部分的連續(例如，如同在全焊料的球140或殼140S中)；(2)將該已熔化的第一部分帶至實體接觸於該第二導電部件，且冷卻該第一部分，以形成該第一與第二導電部件之間的一導電附接。
在一些實施例中，在操作(2)中，當該第二導電部件未熔化時，將該已熔化的第一部分帶至實體接觸於該第二導電部件。
在一些實施例中，該第一部分的一最大預熔化尺寸不超過700μm。
在一些實施例中，該第一部分熔化至不超過500μm的一深度。
在一些實施例中，該第一導電部件的一熔化部分的該預熔化體積不超過該第一導電部件的50%。
在一些實施例中，該第一導電部件包含一核心，該核心具有比該第一導電部件的該表面的該第一部分更高的一熔化溫度。
一些實施例提供一種方法，用於製造一電性連接，該方法包含：提供一第一結構，其包含一第一接觸墊(例如，第9或11A圖中的120)；形成該電性連接的一第一部分於該第一接觸墊上，該第一部分包含一第一部件，該第一部件包含一第一表面(例如，第一部件可為第9或11A圖中的球140.1)；提供該電性連接的一第二部件(例如，球140i)，該第二部件包含一第二表面，該第二表面包含焊料；提供該電性連接的一第三部件(例如，140.2)，該第三部件包含一第三表面；附接該第二部件至該第一與第三表面，其中該附接步驟包含熔化且重新固化該焊料，以附接該焊料至該第一與第三表面，其中該第一與第三表面的至少一者具有一未熔化區域，該未熔化區域在該附接步驟中並未熔化，即使該未熔化區域的一熔化溫度不高於在該附接步驟中的該焊料的一最高溫度。
在一些實施例中，該熔化在該附接步驟期間僅執行一次。
一些實施例提供一種包含電路的結構，該電路包含一半導 體積體電路，該電路包含一導電連接特徵(例如，第12B或22圖中的堆疊210)，該導電連接特徵具有一第一端(例如，第22圖中的210E.1)與一第二端(例如，210E.2)，該連接特徵沿著從該第一端至該第二端的一第一線(例如，1504；該線不必為垂直的，並且可為彎曲的)延伸，其中在該第一線的每一點處，該連接特徵具有一橫向橫剖面面積(例如，第22圖中的點P處的圓形區域A)，該橫向橫剖面面積為該連接特徵在該點處垂直於該第一線的橫剖面的一面積；其中該連接特徵包含一第一部分(例如，第22圖中的1510，或第12B圖中的球140.1的底部一半；該第一部分可為小於第12B圖中的球的一半之球的底部部分、實體接觸於該第一部分的一第二部分(例如，1520，其為擠出520.2)、與實體接觸於該第二部分的一第三部分(例如，1530，或球140.2的上半部分(或少於一半))；其中該第一部分具有一第一端(例如，1510E.1)與一第二端(例如，1510E.2)，該第二端位於與該第二部分的一接合處；其中該第三部分具有一第一端(例如，1530E.1)，該第一端位於與該第二部分的一接合處，且該第三部分具有一第二端(例如，1530E.2)；其中該橫向橫剖面面積：- 從該第一部分的該第一端減小至該第一與第二部分的該接合；- 從該第一與第二部分的該接合增加至該第二部分中的一位置(例如，1520P，該擠出的中間)； - 從該第二部分中的該位置減小至該第二與第三部分的一接合；及- 從該第二與第三部分的該接合增加至該第三部分的該第二端。
在一些實施例中，第一、第二與第三部分的表面具有相同的熔化溫度。
在一些實施例中，該橫向橫剖面面積的一直徑：- 從該第一部分的該第一端減小至該第一與第二部分的該接合；- 從該第一與第二部分的該接合增加至該第二部分中的一位置(例如，1520P，該擠出的中間)；- 從該第二部分中的該位置減小至該第二與第三部分的一接合；及- 從該第二與第三部分的該接合增加至該第三部分的該第二端。
在一些實施例中，在該第二端直接位於該第一端之上的任何視圖中(例如，在第12B或22圖的視圖中，或任何的側視圖(例如，焊料堆疊可對稱於垂直軸))，該導電連接特徵的寬度(例如，直徑D或面積A)：- 從該第一部分的該第一端減小至該第一與第二部分的該接合；- 從該第一與第二部分的該接合增加至該第二部分中的一 位置(例如，1520P，該擠出的中間)；- 從該第二部分中的該位置減小至該第二與第三部分的一接合；及- 從該第二與第三部分的該接合增加至該第三部分的該第二端。
在一些實施例中，第二部分的長度(該擠出的高度)為第一與第三部分的每一者的長度的至多50%(例如，每一球的一半的長度)。第二部分的長度可甚至更小，例如，第一與第三部分的每一者的長度的1%或2%。(針對本揭示案中所述的每一數值範圍，本發明涵蓋所有可能的子範圍以及在該範圍中的任何值；因此，任何子範圍或者大於0%且小於或等於50%的值都可存在)。
在一些實施例中，第二部分的體積為第一與第三部分的每一者的體積的至多50%。
一些實施例提供一種包含電路的結構，該電路包含一半導體積體電路，該電路包含一導電連接特徵(例如，第4B或5B或6B或11B或12B或17B或23圖中的焊球140或堆疊210)，該導電連接特徵具有一第一端(例如，第23圖中的210E.1)附接至一接觸墊，該連接特徵具有一第二端，該連接特徵沿著從該第一端至該第二端的一第一線(例如，1504；該線不必為垂直的，並且可為彎曲的)延伸，其中在該第一線的每一點處，該連接特徵具有一橫向橫剖面面積，該橫向橫剖面面積為該連接特徵在該點處垂直於該第一線的橫剖面的一面積；其中，該橫向橫剖面面積與該橫向橫剖面面積的一直徑之 至少一者：- 從該接觸墊減小至該第一線中的一第一點(例如，該第一點可為第4B或17B或23圖的擠出520的底端1610)；及- 從該第一點增加至該第一線中的一第二點(例如，該第二點可為第4B或23圖中的球140的中間1620，或者可為球的中間之下)；其中沿著該第一線從該接觸墊至該第一點的該距離(例如，擠出的高度D1)為該第一點與該第二點之間的距離的至多25%(例如，距離D2，其小於或等於球140的高度的一半)。如同上述，本發明涵蓋了大於0%至小於或等於25%的所有子範圍，以及子範圍中的所有值，例如包含1%與2%作為D1的可能值、作為D2的百分比。
一些實施例提供一種包含電路的結構，該電路包含一半導體積體電路，該電路包含一導電連接特徵(例如，第4B或5B或6B或11B或12B或17B或23圖中的焊球140或堆疊210)，該導電連接特徵具有一第一端(例如，第23圖中的210E.1)附接至一接觸墊，該連接特徵具有一第二端，該連接特徵沿著從該第一端至該第二端的一第一線(例如，1504；該線不必為垂直的，並且可為彎曲的)延伸，其中在該第一線的每一點處，該連接特徵具有一橫向橫剖面面積，該橫向橫剖面面積為該連接特徵在該點處垂直於該第一線的橫剖面的一面積；其中在任何側視圖中，該橫向橫剖面面積的寬度：- 從該接觸墊減小至該第一線中的一第一點；及- 從該第一點增加至該第一線中的一第二點；其中沿著該第一線從該接觸墊至該第一點的該距離為該第 一點與該第二點之間的距離的至多25%。
一些實施例提供一種包含電路的第一結構，該電路包含一半導體積體電路，該電路包含一導電連接特徵係用於連接該第一結構的一接觸墊至另一結構，該導電連接特徵包含一第一端係附接至該接觸墊，且包含一第二端係用於附接至該另一結構；其中該連接特徵包含一第一非焊料球與一第二非焊料球(例如，如同在第11B圖中)，其一個接著另一個沿著從該第一端至該第二端的該連接特徵的路徑而相繼定位於該第一與第二端之間；其中該連接特徵具有一連續的焊料表面，其橫向圍繞該第一與第二非焊球；其中該連續焊料表面具有相鄰於該第一與第二球的一連續突伸，其中該連續突伸在該連接特徵的所有側部上橫向突伸。該第一與第二球可或可不接觸於彼此。在一些實施例中，該第一與第二球之間的距離為至多1mm。
一些實施例提供一種製品，包含：一第一結構，其包含一接觸墊；一導電連接，其具有附接至該接觸墊的一底部；及一介電質層(例如，第14B、16B、17B圖中的1210)，其包含一頂表面與在該頂表面中的一通孔，該通孔包含該導電連接的至少一部分，該部分包含焊料並且實體接觸於該通孔中的該介電質層，該導電連接在該介電質層的該頂表面處凹進該通孔中。值得注意的是，該通孔與該連接可或可不為垂直的。
在一些實施例中，該通孔具有在該介電質層的該頂表面處的一凹側壁。
在一些實施例中，該導電連接係附接至一第二結構的一導電柱(例如，1240)，該導電柱部分位於該通孔的一頂部中。
本發明並不限定於上述實施例。其他實施例與變化例都在本發明的範圍內，如同所附申請專利範圍所界定的。

Claims (16)

  1. 一種方法，用於將一第一導電部件附接至一第二導電部件，該方法包含：(1)熔化該第一導電部件的一表面的一第一部分而不熔化該第一導電部件的該表面的一第二部分，即使該第二部分的熔化溫度不高於該第一部分的熔化溫度，其中該第二部分為該第一部分的連續；(2)將該已熔化的第一部分實體接觸於該第二導電部件，且冷卻該第一部分，以形成該第一與第二導電部件之間的一導電附接；其中該第二部分於步驟(1)及(2)中未熔化；以及其中該第一導電部件包含一核心，該核心具有比該第一導電部件的該表面的該第一部分一更高的熔化溫度。
  2. 如申請專利範圍第1項之方法，其中在操作(2)時，當該第二導電部件未熔化時，將該已熔化的第一部分實體接觸於該第二導電部件。
  3. 如申請專利範圍第1項之方法，其中該第一部分的一最大預熔化尺寸不超過700μm。
  4. 如申請專利範圍第1項之方法，其中該第一部分熔化之一深度，不超過500μm。
  5. 如申請專利範圍第1項之方法，其中該第一導電部件的一熔化部分的該預 熔化體積不超過該第一導電部件的50%。
  6. 如申請專利範圍第1項之方法，其中該第二導電部件為一半導體積體電路或附接至一半導體積體電路的一基板之一接觸墊，或者該第二導電部件為在操作(1)之前已經附接至此種接觸墊的一連接部件。
  7. 如申請專利範圍第1項之方法，其中該熔化係藉由一電磁輻射束來執行。
  8. 一種方法，用於製造一電性連接，該方法包含：提供一第一結構，其包含一第一接觸墊；形成該電性連接的一第一部分於該第一接觸墊上，該第一部分包含一第一部件，該第一部件包含一第一表面；提供該電性連接的一第二部件，該第二部件包含一第二表面，該第二表面包含焊料；提供該電性連接的一第三部件，該第三部件包含一第三表面；附接該第二部件至該第一與第三表面，其中該附接步驟包含熔化該焊料使熔化的焊料實際接觸該第一及第三表面且重新固化該焊料，以附接該焊料至該第一與第三表面，其中該第一與第三表面的至少一者具有一未熔化區域，該未熔化區域在該附接步驟中並未熔化，即使該未熔化區域的一熔化溫度不高於在該附接步驟中的該焊料的一最高溫度。
  9. 如申請專利範圍第8項之方法，其中該第一與第三表面在該附接步驟中並 未熔化。
  10. 如申請專利範圍第8項之方法，其中該第一與第三表面的至少一者具有與該焊料相同的熔化溫度。
  11. 如申請專利範圍第8項之方法，其中該第三部件為一焊球，其具有與該第二部件的焊料相同的熔化溫度，但是其在該附接步驟中並未熔化。
  12. 如申請專利範圍第8項之方法，其中該第一結構包含一半導體積體電路或附接至一半導體積體電路的一基板之至少一者。
  13. 如申請專利範圍第8項之方法，其中該熔化係藉由一電磁輻射束來執行。
  14. 如申請專利範圍第8項之方法，其中該焊料圍繞在該附接步驟中並未熔化的一核心。
  15. 如申請專利範圍第8項之方法，其中該熔化在該附接步驟期間僅執行一次。
  16. 一種製品，包含：一第一結構，其包含一接觸墊；一導電連接，其一底部附接至該接觸墊；及 一介電質層，其包含一頂表面與在該頂表面中的一通孔，該通孔包含該導電連接的至少一部分，該部分包含焊料並且實體接觸於該通孔中的該介電質層，該導電連接在該介電質層的該頂表面處凹進該通孔中；以及其中該通孔在該介電質層的該頂表面處具有一凹側壁；其中該導電連接係附接至一第二結構的一導電柱，該導電柱部分位於該通孔的一頂部中。
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