TWI590259B - 焊球、其製造方法以及半導體元件 - Google Patents

焊球、其製造方法以及半導體元件 Download PDF

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Publication number
TWI590259B
TWI590259B TW105113385A TW105113385A TWI590259B TW I590259 B TWI590259 B TW I590259B TW 105113385 A TW105113385 A TW 105113385A TW 105113385 A TW105113385 A TW 105113385A TW I590259 B TWI590259 B TW I590259B
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Taiwan
Prior art keywords
silver
outer layer
carrier
solder ball
layer structure
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TW105113385A
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English (en)
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TW201738902A (zh
Inventor
盧東寶
徐子涵
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南茂科技股份有限公司
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Priority to TW105113385A priority Critical patent/TWI590259B/zh
Priority to CN201610609485.3A priority patent/CN107342274A/zh
Priority to US15/297,158 priority patent/US9780056B1/en
Application granted granted Critical
Publication of TWI590259B publication Critical patent/TWI590259B/zh
Publication of TW201738902A publication Critical patent/TW201738902A/zh

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Description

焊球、其製造方法以及半導體元件
本發明是有關於一種焊球、其製造方法以及半導體元件，且特別是有關於一種具有銀球體結構的焊球、其製造方法以及半導體元件。
隨著科技的進步，各類電子產品皆朝向高速、高效能以及輕薄短小的趨勢發展，而在這趨勢之下，半導體封裝的微型化也隨之應運而生。
近年來，覆晶接合技術（Flip Chip Bonding Technology，簡稱FC）已然成為半導體封裝的重要方向。覆晶接合技術是一種將晶片連接至載體的封裝技術，其主要是將多個焊墊配置於晶片之主動面上，並在焊墊上形成凸塊（bump），接著將晶片覆置（flip）之後，再經由這些凸塊，將晶片上的焊墊分別電性連接至載體上的接點（contact），使得晶片可經由凸塊而電性連接至載體，再經由載體之內部線路而電性連接至外界之電子裝置。
一般而言，常以錫當作凸塊或焊球的材料。然而，在進行迴焊之後，低熔點的含錫凸塊或焊球容易產生塌陷（collapse）的現象，使得晶片與載體之間的間距縮短或不穩定。更甚者，當塌陷的程度過大，彼此相鄰的凸塊或焊球容易發生橋接而形成短路（short）現象，進而影響封裝良率。
本發明提供一種焊球、其製造方法以及半導體元件，所述焊球可具有更好的焊球高度（ball height）的穩定性。
本發明提供一種焊球，包括：銀球體結構以及外層結構。外層結構包覆銀球體結構的表面，其中外層結構的材料至少包括錫。
在本發明的一實施例中，所述外層結構的材料包括錫或錫銀合金，且銀的含量為2.5%。
在本發明的一實施例中，所述銀球體結構的直徑介於30微米至100微米之間。所述外層結構的厚度介於10微米至30微米之間。所述銀球體結構的直徑與該外層結構的厚度的總和介於50微米至160微米之間。
在本發明的一實施例中，所述銀球體結構的熔點高於所述外層結構的熔點。
在本發明的一實施例中，所述銀球體結構的硬度大於所述外層結構的硬度。
本發明提供一種焊球的製造方法，其步驟如下。藉由噴霧造粒方式將銀原材形成多個銀球體結構。藉由滾鍍（barrel plating）方式形成多個外層結構分別包覆所述銀球體結構的表面。所述外層結構的材料至少包括錫。
在本發明的一實施例中，所述外層結構的材料包括錫或錫銀合金，且銀的含量為2.5%。
本發明提供一種半導體元件，包括第一載體以及多個焊球。第一載體具有多個焊墊。焊球分別配置於第一載體的焊墊上。所述焊球分別與焊墊電性連接。
在本發明的一實施例中，所述焊球的外層結構分別與焊墊接合（bonding）。
在本發明的一實施例中，所述半導體元件更包括第二載體配置在第一載體上。第二載體藉由焊球與第一載體電性連接。
基於上述，本發明藉由具有銀球體結構的焊球電性連接第一載體與第二載體。相較於習知的含錫凸塊，本發明之銀球體結構具有更好的焊球高度的穩定性，以避免塌陷現象。另外，本發明之銀球體結構亦具有較佳的導電性，以提升半導體元件的效能。此外，本發明又將含錫的外層結構包覆銀球體結構的表面，相較於單一銀球體結構而言，本發明之焊球亦具有降低迴焊溫度的功效。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
參照本實施例之圖式以更全面地闡述本發明。然而，本發明亦可以各種不同的形式體現，而不應限於本文中所述之實施例。圖式中的層與區域的厚度會為了清楚起見而放大。相同或相似之參考號碼表示相同或相似之元件，以下段落將不再一一贅述。
圖1是依照本發明之一實施例的一種焊球的剖面示意圖。
請參照圖1，本實施例之焊球100包括銀球體結構102以及包覆銀球體結構102之表面的外層結構104。具體來說，焊球100的製造方法的步驟如下所示。
首先，藉由噴霧造粒方式將銀原材（silver raw material）形成多個銀球體結構102。在一實施例中，銀球體結構102可例如是實心的球體結構或是實心的類球體結構，其材料包括純銀。但本發明不以此為限，在其他實施例中，銀球體結構102的材料亦可為銀合金，其中銀與其他金屬的比例可依需求來調整。另外，銀球體結構102的直徑可介於30微米至100微米之間。
接著，藉由滾鍍方式形成多個外層結構104。所謂滾鍍是一種電鍍加工方式，其可將銀球體結構102放置在專用滾筒內，在滾動狀態下使得銀球體結構102表面上沈積外層結構104。隨著所述滾筒的滾動程度愈大，外層結構104電鍍至銀球體結構102表面的均勻度亦愈大。因此，外層結構104可完整包覆銀球體結構102的表面。在一實施例中，外層結構104的材料可包括錫或錫銀合金，且錫銀合金中的銀的含量可例如是2.5%。另外，外層結構104的直徑可介於10微米至30微米之間。而整個焊球100（亦即銀球體結構102的直徑與外層結構104的厚度的總和）的直徑可介於50微米至160微米之間。但本發明不以此為限，在其他實施例中，銀球體結構102的直徑、外層結構104的厚度以及整個焊球100的直徑可依需求來調整。
圖2是依照本發明之第一實施例的一種半導體元件的剖面示意圖。
請先參照圖2，本發明之第一實施例提供一種半導體元件10，包括具有多個焊墊112的第一載體110、具有多個焊墊122的第二載體120以及多個焊球100。焊球100分別配置在第一載體110的焊墊112與第二載體120的焊墊122之間。焊球100可電性連接第一載體110與第二載體120。在一實施例中，第一載體110可例如是晶粒（die）、晶片（chip）、晶圓（wafer）、半導體基板、電路板或其組合。相似地，第二載體120亦可例如是晶粒、晶片、晶圓、半導體基板、電路板或其組合。第一載體110與第二載體120的尺寸、功能或結構可以相同。舉例來說，第一載體110與第二載體120可例如是相同尺寸的晶片，藉由焊球100互相堆疊為堆疊晶片結構。但本發明不以此為限，在其他實施例中，第一載體110與第二載體120的尺寸、功能或結構亦可以不同。舉例來說，第一載體110可例如是電路板，而第二載體120可以是半導體晶片，且上述的第一載體110與第二載體120構成一覆晶結構。在其他實施例中，第一載體110可為晶圓，而第二載體120可為半導體晶片。所述半導體晶片藉由焊球100電性連接至所述電路板，再經由所述電路板電性連接至外部電路。
詳細地說，本實施例之半導體元件10的製造方法的步驟如下所示。首先，利用植球（ball placement）方式在第一載體110的焊墊112上配置焊球100。接著，進行第一次迴焊，使得焊球100與第一載體110的焊墊112接合。然後，將第二載體120覆置之後，使得第二載體120的焊墊122分別對應於焊球100。接著，再進行第二次迴焊，使得焊球100的外層結構104分別與焊墊112、122接合在一起。在經過二次迴焊後，外層結構104的側壁或是表面S可例如是外凸形，其自焊球100的中心朝焊球100的表面突出。另外，銀球體結構102可與焊墊112、122直接接觸。也就是說，銀球體結構102未透過外層結構104，而與焊墊112、122直接電性連接，以提升焊球100與第一載體110以及第二載體120之間的導電性。
值得一提的是，本實施例之銀球體結構102的熔點大於外層結構104的熔點且銀球體結構102的硬度大於外層結構104的硬度。因此，當迴焊溫度達到外層結構104的熔點時，外層結構104會先熔融，以達到接合功效。此時，銀球體結構102仍為固態，其具有一定硬度，也就是說，本實施例之焊球100具有較好的焊球高度的穩定性。另外，在覆置第二載體120之後，焊球100具有良好的球高穩定性，以避免塌陷現象。此外，相較於習知的含錫凸塊，本實施例之銀球體結構102具有較佳的導電性。因此，以具有銀球體結構102的焊球100來電性連接第一載體110與第二載體120，可提升整體半導體元件10的效能。
圖3是依照本發明之第二實施例的一種半導體元件的剖面示意圖。
請參照圖3，本發明之第二實施例提供另一種半導體元件20。基本上，第二實施例之半導體元件20的結構與製造方法與第一實施例之半導體元件10的結構與製造方法相似。上述兩者不同之處在於第二實施例之焊球100a的銀球體結構102a不與焊墊112、122直接接觸。具體來說，銀球體結構102a與焊墊112、122之間仍具有部分外層結構104a，使得銀球體結構102a藉由部分外層結構104a與焊墊112、122電性連接。由圖2與圖3可知，本實施例可依據需求來調整銀球體結構與外層結構的含量比例，以形成不同結構（銀球體結構與焊墊直接接觸或不直接接觸）的半導體元件。
圖4是依照本發明之第三實施例的一種半導體元件的剖面示意圖。為簡化並放大圖式，圖4僅繪示一個焊球100b，但本發明不以此為限，在其他實施例中，焊球100b的數量可依需求來調整。
請參照圖4，本發明之第三實施例提供又一種半導體元件30。基本上，第三實施例之半導體元件30的結構與製造方法與第一實施例之半導體元件10的結構與製造方法相似。上述兩者不同之處在於第三實施例之焊球100b的側壁或是表面S為內凹形，其自焊球100b的表面朝焊球100b的中心凹陷；而第一實施例之焊球100的側壁或是表面S為外凸形。從另一角度來看，焊球100b的剖面的輪廓可例如是沙漏形。但本發明不以此為限，由於外層結構與焊墊之間的表面張力不同，因此，所述側壁或是表面可具有不同形狀。在其他實施例中，焊球的側壁或是表面亦可例如是直線形，亦即焊球的剖面的輪廓為矩形。順帶一提的是，雖然在圖4中所繪示的焊球100b的側壁或是表面S為呈V字型的內凹面，但其亦可為呈U字型的內凹曲面。
圖5是依照本發明之第四實施例的一種半導體元件的剖面示意圖。
請參照圖5，本發明之第四實施例提供其他半導體元件40。基本上，第四實施例之半導體元件40的結構與製造方法與第三實施例之半導體元件30的結構與製造方法相似。上述兩者不同之處在於第四實施例之銀球體結構102c並未與焊墊112、122直接接觸，而且銀球體結構102c與焊墊112、122之間仍具有部分外層結構104c。
從圖2至圖5可知，無論銀球體結構是否與焊墊直接接觸，只要銀球體結構能具有更好的焊球高度的穩定性，以避免塌陷現象，皆為本發明的範疇。
綜上所述，本發明藉由具有銀球體結構的焊球以電性連接第一載體與第二載體。相較於習知的含錫凸塊，本發明之銀球體結構具有更好的焊球高度的穩定性，以避免塌陷現象。另外，本發明之銀球體結構亦具有較佳的導電性，以提升半導體元件的效能。此外，本發明又將含錫的外層結構包覆銀球體結構的表面，相較於單一銀球體結構而言，本發明之焊球亦具有降低迴焊溫度的功效。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10、20、30、40‧‧‧半導體元件
100、100a、100b、100c‧‧‧焊球
102、102a、102b、102c‧‧‧銀球體結構
104、104a、104b、104c‧‧‧外層結構
110‧‧‧第一載體
112、122‧‧‧焊墊
120‧‧‧第二載體
S‧‧‧側壁
圖1是依照本發明之一實施例的一種焊球的剖面示意圖。 圖2是依照本發明之第一實施例的一種半導體元件的剖面示意圖。 圖3是依照本發明之第二實施例的一種半導體元件的剖面示意圖。 圖4是依照本發明之第三實施例的一種半導體元件的剖面示意圖。 圖5是依照本發明之第四實施例的一種半導體元件的剖面示意圖。
100‧‧‧焊球
102‧‧‧銀球體結構
104‧‧‧外層結構

Claims (9)

  1. 一種焊球，包括：一銀球體結構；以及一外層結構，包覆該銀球體結構的表面，其中該外層結構的材料至少包括錫，其中該銀球體結構的硬度大於該外層結構的硬度。
  2. 如申請專利範圍第1項所述的焊球，其中該外層結構的材料包括錫或錫銀合金，且銀的含量為2.5%。
  3. 如申請專利範圍第1項所述的焊球，其中該銀球體結構的直徑介於30微米至100微米之間，該外層結構的厚度介於10微米至30微米之間，該銀球體結構的直徑與該外層結構的厚度的總和介於50微米至160微米之間。
  4. 如申請專利範圍第1項所述的焊球，其中該銀球體結構的熔點高於該外層結構的熔點。
  5. 一種焊球的製造方法，包括：藉由噴霧造粒方式將一銀原材形成多個銀球體結構；以及藉由滾鍍方式形成多個外層結構分別包覆該些銀球體結構的表面，其中該些外層結構的材料至少包括錫，且該銀球體結構的硬度大於該外層結構的硬度。
  6. 如申請專利範圍第5項所述的焊球的製造方法，其中該外層結構的材料包括錫或錫銀合金，且銀的含量為2.5%。
  7. 一種半導體元件，包括： 一第一載體，具有多個焊墊；以及多個如申請專利範圍第1項至第4項中任一項所述之焊球，分別配置於該第一載體的該些焊墊上，其中該些焊球分別與該些焊墊電性連接。
  8. 如申請專利範圍第7項所述的半導體元件，其中該些焊球的該些外層結構分別與該些焊墊接合。
  9. 如申請專利範圍第7項所述的半導體元件，更包括一第二載體配置在該第一載體上，其中該第二載體藉由該些焊球與該第一載體電性連接。
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