TWI636501B - 使用水蒸氣處理將材料層從基材移除的方法 - Google Patents
使用水蒸氣處理將材料層從基材移除的方法 Download PDFInfo
- Publication number
- TWI636501B TWI636501B TW101141568A TW101141568A TWI636501B TW I636501 B TWI636501 B TW I636501B TW 101141568 A TW101141568 A TW 101141568A TW 101141568 A TW101141568 A TW 101141568A TW I636501 B TWI636501 B TW I636501B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- dielectric layer
- water vapor
- layer
- exposing
- Prior art date
Links
Classifications
-
- H10P72/0411—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- H10P50/285—
-
- H10P50/73—
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- H10P70/234—
-
- H10W20/081—
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/291,286 US9653327B2 (en) | 2011-05-12 | 2011-11-08 | Methods of removing a material layer from a substrate using water vapor treatment |
| US13/291,286 | 2011-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201330085A TW201330085A (zh) | 2013-07-16 |
| TWI636501B true TWI636501B (zh) | 2018-09-21 |
Family
ID=47141035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101141568A TWI636501B (zh) | 2011-11-08 | 2012-11-08 | 使用水蒸氣處理將材料層從基材移除的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9653327B2 (enExample) |
| JP (1) | JP6158199B2 (enExample) |
| KR (1) | KR102033707B1 (enExample) |
| TW (1) | TWI636501B (enExample) |
| WO (1) | WO2013070570A1 (enExample) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9653327B2 (en) | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
| US9299581B2 (en) | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
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| US9390923B2 (en) | 2014-07-03 | 2016-07-12 | Applied Materials, Inc. | Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process |
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| US9685383B2 (en) * | 2015-05-13 | 2017-06-20 | United Microelectronics Corp. | Method of forming semiconductor device |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| JP6854611B2 (ja) * | 2016-01-13 | 2021-04-07 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び基板処理システム |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10679830B2 (en) * | 2016-06-20 | 2020-06-09 | Applied Materials, Inc. | Cleaning process for removing boron-carbon residuals in processing chamber at high temperature |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US9768034B1 (en) * | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10867843B2 (en) * | 2016-12-05 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for fabrication semiconductor device |
| JP6914143B2 (ja) * | 2016-12-26 | 2021-08-04 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法 |
| KR102456820B1 (ko) * | 2016-12-26 | 2022-10-19 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법, 기판 처리 장치, 기판 처리 시스템, 기판 처리 시스템의 제어 장치, 반도체 기판의 제조 방법 및 반도체 기판 |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| WO2018222771A1 (en) * | 2017-06-02 | 2018-12-06 | Applied Materials, Inc. | Dry stripping of boron carbide hardmask |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| WO2019067538A1 (en) * | 2017-09-29 | 2019-04-04 | Tokyo Electron Limited | METHODS AND SYSTEMS FOR COATING A SUBSTRATE WITH A FLUID |
| US10269574B1 (en) | 2017-10-03 | 2019-04-23 | Mattson Technology, Inc. | Surface treatment of carbon containing films using organic radicals |
| JP6977474B2 (ja) * | 2017-10-23 | 2021-12-08 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US11387111B2 (en) | 2018-04-13 | 2022-07-12 | Mattson Technology, Inc. | Processing of workpieces with reactive species generated using alkyl halide |
| WO2019240930A1 (en) | 2018-06-11 | 2019-12-19 | Mattson Technology, Inc. | Generation of hydrogen reactive species for processing of workpieces |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11495456B2 (en) | 2018-10-15 | 2022-11-08 | Beijing E-Town Semiconductor Technology, Co., Ltd | Ozone for selective hydrophilic surface treatment |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| JP2022512802A (ja) * | 2018-10-26 | 2022-02-07 | マトソン テクノロジー インコーポレイテッド | ハードマスクを除去するための水蒸気ベースのフッ素含有プラズマ |
| US11049728B2 (en) * | 2018-10-31 | 2021-06-29 | Entegris, Inc. | Boron-doped amorphous carbon hard mask and related methods |
| CN118471789A (zh) | 2018-11-16 | 2024-08-09 | 玛特森技术公司 | 腔室上光以通过减少化学成分改善刻蚀均匀性 |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US10403492B1 (en) | 2018-12-11 | 2019-09-03 | Mattson Technology, Inc. | Integration of materials removal and surface treatment in semiconductor device fabrication |
| JP7311628B2 (ja) | 2019-04-30 | 2023-07-19 | マトソン テクノロジー インコーポレイテッド | メチル化処理を使用した選択的な堆積 |
| US11443936B2 (en) * | 2020-06-19 | 2022-09-13 | Applied Materials, Inc. | Methods and apparatus for aluminum oxide surface recovery |
| CN113192958B (zh) * | 2021-04-28 | 2022-01-04 | 长江存储科技有限责任公司 | 存储器件及其制造方法 |
| CN115642076A (zh) * | 2021-07-20 | 2023-01-24 | 长鑫存储技术有限公司 | 半导体结构的处理方法 |
| JP7635099B2 (ja) * | 2021-08-27 | 2025-02-25 | 東京エレクトロン株式会社 | エッチング方法及びプラズマエッチング装置 |
| US12469683B2 (en) * | 2021-09-27 | 2025-11-11 | Applied Materials Inc. | Water vapor plasma to enhance surface hydrophilicity |
| KR102528303B1 (ko) * | 2021-11-22 | 2023-05-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
| JP2023150716A (ja) * | 2022-03-31 | 2023-10-16 | Tdk株式会社 | 電子部品の製造方法 |
| WO2023210269A1 (ja) * | 2022-04-26 | 2023-11-02 | サムコ株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| KR20240053429A (ko) * | 2022-10-17 | 2024-04-24 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR20240086974A (ko) * | 2022-12-12 | 2024-06-19 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US20240222195A1 (en) * | 2022-12-30 | 2024-07-04 | Applied Materials, Inc. | Dipole formation processes |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382316A (en) * | 1993-10-29 | 1995-01-17 | Applied Materials, Inc. | Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure |
| US6500357B1 (en) * | 1999-12-28 | 2002-12-31 | Applied Materials Inc. | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
| US20050202683A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
| US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US20070068558A1 (en) * | 2005-09-06 | 2007-03-29 | Applied Materials, Inc. | Apparatus and methods for mask cleaning |
| US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
| US20110108058A1 (en) * | 2009-11-11 | 2011-05-12 | Axcelis Technologies, Inc. | Method and apparatus for cleaning residue from an ion source component |
Family Cites Families (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262262A (en) | 1985-05-31 | 1993-11-16 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor having conductive layer and amorphous carbon overlayer |
| US4975144A (en) | 1988-03-22 | 1990-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of plasma etching amorphous carbon films |
| JPH05217965A (ja) | 1992-01-22 | 1993-08-27 | Nec Corp | 半導体装置の製造方法 |
| JPH07243064A (ja) | 1994-01-03 | 1995-09-19 | Xerox Corp | 基板清掃方法 |
| US5461003A (en) | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
| TW366367B (en) | 1995-01-26 | 1999-08-11 | Ibm | Sputter deposition of hydrogenated amorphous carbon film |
| JP2005328075A (ja) * | 1995-12-28 | 2005-11-24 | Seiko Epson Corp | 表面処理方法および表面処理装置 |
| JP2956571B2 (ja) | 1996-03-07 | 1999-10-04 | 日本電気株式会社 | 半導体装置 |
| US5789320A (en) | 1996-04-23 | 1998-08-04 | International Business Machines Corporation | Plating of noble metal electrodes for DRAM and FRAM |
| US5759913A (en) | 1996-06-05 | 1998-06-02 | Advanced Micro Devices, Inc. | Method of formation of an air gap within a semiconductor dielectric by solvent desorption |
| KR100205318B1 (ko) | 1996-10-11 | 1999-07-01 | 구본준 | 자유전율의 절연막 제조방법 |
| US6310300B1 (en) | 1996-11-08 | 2001-10-30 | International Business Machines Corporation | Fluorine-free barrier layer between conductor and insulator for degradation prevention |
| ATE255769T1 (de) | 1997-01-21 | 2003-12-15 | Georgia Tech Res Inst | Verfahren zur herstellung einer halbleitervorrichtung mit luftspalten für verbindungen mit ultraniedriger kapazität |
| JP2962272B2 (ja) | 1997-04-18 | 1999-10-12 | 日本電気株式会社 | 半導体装置の製造方法 |
| EP0881668A3 (en) | 1997-05-28 | 2000-11-15 | Dow Corning Toray Silicone Company, Ltd. | Deposition of an electrically insulating thin film with a low dielectric constant |
| US6428894B1 (en) | 1997-06-04 | 2002-08-06 | International Business Machines Corporation | Tunable and removable plasma deposited antireflective coatings |
| US6008140A (en) | 1997-08-13 | 1999-12-28 | Applied Materials, Inc. | Copper etch using HCI and HBr chemistry |
| US6333255B1 (en) | 1997-08-21 | 2001-12-25 | Matsushita Electronics Corporation | Method for making semiconductor device containing low carbon film for interconnect structures |
| US6203898B1 (en) | 1997-08-29 | 2001-03-20 | 3M Innovatave Properties Company | Article comprising a substrate having a silicone coating |
| US6035803A (en) | 1997-09-29 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for controlling the deposition of a fluorinated carbon film |
| US6211065B1 (en) | 1997-10-10 | 2001-04-03 | Applied Materials, Inc. | Method of depositing and amorphous fluorocarbon film using HDP-CVD |
| US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
| US6323119B1 (en) | 1997-10-10 | 2001-11-27 | Applied Materials, Inc. | CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application |
| US5981000A (en) | 1997-10-14 | 1999-11-09 | International Business Machines Corporation | Method for fabricating a thermally stable diamond-like carbon film |
| US6057226A (en) | 1997-11-25 | 2000-05-02 | Intel Corporation | Air gap based low dielectric constant interconnect structure and method of making same |
| US6098568A (en) | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
| TWI246633B (en) | 1997-12-12 | 2006-01-01 | Applied Materials Inc | Method of pattern etching a low k dielectric layen |
| US6143476A (en) | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
| JP3193335B2 (ja) * | 1997-12-12 | 2001-07-30 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6291334B1 (en) | 1997-12-19 | 2001-09-18 | Applied Materials, Inc. | Etch stop layer for dual damascene process |
| JP3507322B2 (ja) | 1997-12-24 | 2004-03-15 | キヤノン株式会社 | 電子写真装置 |
| US6140226A (en) | 1998-01-16 | 2000-10-31 | International Business Machines Corporation | Dual damascene processing for semiconductor chip interconnects |
| US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
| US5986344A (en) | 1998-04-14 | 1999-11-16 | Advanced Micro Devices, Inc. | Anti-reflective coating layer for semiconductor device |
| US6184572B1 (en) | 1998-04-29 | 2001-02-06 | Novellus Systems, Inc. | Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices |
| US5882830A (en) | 1998-04-30 | 1999-03-16 | Eastman Kodak Company | Photoconductive elements having multilayer protective overcoats |
| JP2000106396A (ja) | 1998-09-29 | 2000-04-11 | Sharp Corp | 半導体装置の製造方法 |
| US6635583B2 (en) | 1998-10-01 | 2003-10-21 | Applied Materials, Inc. | Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating |
| US6140224A (en) | 1999-04-19 | 2000-10-31 | Worldiwide Semiconductor Manufacturing Corporation | Method of forming a tungsten plug |
| KR100307629B1 (ko) | 1999-04-30 | 2001-09-26 | 윤종용 | 하이드로 카본계의 가스를 이용한 반사방지막의 형성 및 적용방법 |
| US6030901A (en) | 1999-06-24 | 2000-02-29 | Advanced Micro Devices, Inc. | Photoresist stripping without degrading low dielectric constant materials |
| US6423384B1 (en) | 1999-06-25 | 2002-07-23 | Applied Materials, Inc. | HDP-CVD deposition of low dielectric constant amorphous carbon film |
| US6153935A (en) | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
| US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| KR100316721B1 (ko) | 2000-01-29 | 2001-12-12 | 윤종용 | 실리사이드막을 구비한 반도체소자의 제조방법 |
| US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
| US20020086547A1 (en) | 2000-02-17 | 2002-07-04 | Applied Materials, Inc. | Etch pattern definition using a CVD organic layer as an anti-reflection coating and hardmask |
| JP2002194547A (ja) | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
| US6413852B1 (en) | 2000-08-31 | 2002-07-02 | International Business Machines Corporation | Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material |
| US6380106B1 (en) | 2000-11-27 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures |
| TW462122B (en) | 2000-12-18 | 2001-11-01 | United Microelectronics Corp | Air gap semiconductor structure and the manufacturing method thereof |
| TW476135B (en) | 2001-01-09 | 2002-02-11 | United Microelectronics Corp | Manufacture of semiconductor with air gap |
| JP3925088B2 (ja) * | 2001-01-16 | 2007-06-06 | 株式会社日立製作所 | ドライ洗浄方法 |
| CN1596466A (zh) | 2001-07-02 | 2005-03-16 | 陶氏康宁公司 | 通过在多孔材料上的sic∶h沉积提高金属阻挡性能 |
| US7226853B2 (en) | 2001-12-26 | 2007-06-05 | Applied Materials, Inc. | Method of forming a dual damascene structure utilizing a three layer hard mask structure |
| US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
| US6884733B1 (en) | 2002-08-08 | 2005-04-26 | Advanced Micro Devices, Inc. | Use of amorphous carbon hard mask for gate patterning to eliminate requirement of poly re-oxidation |
| US20040038537A1 (en) | 2002-08-20 | 2004-02-26 | Wei Liu | Method of preventing or suppressing sidewall buckling of mask structures used to etch feature sizes smaller than 50nm |
| US20040229470A1 (en) | 2003-05-14 | 2004-11-18 | Applied Materials, Inc. | Method for etching an aluminum layer using an amorphous carbon mask |
| US6939794B2 (en) | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
| WO2005087974A2 (en) | 2004-03-05 | 2005-09-22 | Applied Materials, Inc. | Cvd processes for the deposition of amorphous carbon films |
| US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US20060199393A1 (en) | 2004-06-29 | 2006-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | H20 plasma and h20 vapor methods for releasing charges |
| KR100533978B1 (ko) | 2004-06-30 | 2005-12-07 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
| KR100637689B1 (ko) | 2005-04-21 | 2006-10-24 | 주식회사 하이닉스반도체 | 고상에피택시 방식을 이용한 반도체소자의 콘택 형성 방법 |
| KR20070081649A (ko) | 2006-02-13 | 2007-08-17 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US7867578B2 (en) | 2006-06-28 | 2011-01-11 | Applied Materials, Inc. | Method for depositing an amorphous carbon film with improved density and step coverage |
| US7517804B2 (en) * | 2006-08-31 | 2009-04-14 | Micron Technologies, Inc. | Selective etch chemistries for forming high aspect ratio features and associated structures |
| US7771541B2 (en) * | 2007-03-22 | 2010-08-10 | International Business Machines Corporation | Method of removing metallic, inorganic and organic contaminants from chip passivation layer surfaces |
| US8337950B2 (en) | 2007-06-19 | 2012-12-25 | Applied Materials, Inc. | Method for depositing boron-rich films for lithographic mask applications |
| TW201001527A (en) * | 2008-02-29 | 2010-01-01 | Applied Materials Inc | Method and apparatus for removing polymer from a substrate |
| US9653327B2 (en) | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
| US9299581B2 (en) | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
-
2011
- 2011-11-08 US US13/291,286 patent/US9653327B2/en active Active
-
2012
- 2012-11-06 JP JP2014541148A patent/JP6158199B2/ja active Active
- 2012-11-06 WO PCT/US2012/063651 patent/WO2013070570A1/en not_active Ceased
- 2012-11-06 KR KR1020147013951A patent/KR102033707B1/ko active Active
- 2012-11-08 TW TW101141568A patent/TWI636501B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382316A (en) * | 1993-10-29 | 1995-01-17 | Applied Materials, Inc. | Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure |
| US6500357B1 (en) * | 1999-12-28 | 2002-12-31 | Applied Materials Inc. | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene |
| US20050202683A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
| US20060019033A1 (en) * | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US20070068558A1 (en) * | 2005-09-06 | 2007-03-29 | Applied Materials, Inc. | Apparatus and methods for mask cleaning |
| US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
| US20110108058A1 (en) * | 2009-11-11 | 2011-05-12 | Axcelis Technologies, Inc. | Method and apparatus for cleaning residue from an ion source component |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013070570A1 (en) | 2013-05-16 |
| TW201330085A (zh) | 2013-07-16 |
| JP2015504239A (ja) | 2015-02-05 |
| KR102033707B1 (ko) | 2019-10-17 |
| KR20140089383A (ko) | 2014-07-14 |
| JP6158199B2 (ja) | 2017-07-05 |
| US9653327B2 (en) | 2017-05-16 |
| US20120285481A1 (en) | 2012-11-15 |
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