TWI627697B - Die bonding device with inert gas environment - Google Patents

Die bonding device with inert gas environment Download PDF

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Publication number
TWI627697B
TWI627697B TW105115900A TW105115900A TWI627697B TW I627697 B TWI627697 B TW I627697B TW 105115900 A TW105115900 A TW 105115900A TW 105115900 A TW105115900 A TW 105115900A TW I627697 B TWI627697 B TW I627697B
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Taiwan
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inert gas
die
gas container
bonding
container
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TW105115900A
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TW201709389A (zh
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Siu Wing Lau
Kin Yik Hung
Yuk Cheung Au
Wing Chiu Lai
Man Lee
Yuen Sai
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Asm Tech Singapore Pte Ltd
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Publication of TWI627697B publication Critical patent/TWI627697B/zh

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Abstract

一種模片鍵合裝置包括：第一惰性氣體容器，該第一惰性氣體容器具有第一惰性氣體濃度；以及封閉在所述第一惰性氣體容器內的第二惰性氣體容器，該第二惰性氣體容器具有第二惰性氣體濃度。第二惰性氣體濃度比第一惰性氣體濃度高。該模片鍵合裝置還包括：鍵合頭，該鍵合頭位於所述第二惰性氣體容器中用於接收待鍵合模片；以及第三惰性氣體容器，該第三惰性氣體容器具有與所述第一惰性氣體容器和所述第二惰性氣體容器分離並且能夠定位基板以鍵合模片的惰性氣體環境。所述鍵合頭操作成在所述第二惰性氣體容器內的第一位置和所述第三惰性氣體容器內的第二位置之間移動所述模片，以將所述模片鍵合到位於所述第三惰性氣體容器中的所述基板上。

Description

具有惰性氣體環境的模片鍵合裝置
本發明涉及模片鍵合裝置，並且尤其涉及包括用於實施模片鍵合的惰性氣體環境的模片鍵合裝置。
當製造電子封裝時積體電路(IC)的組裝涉及將模片或晶片附裝到基板。鍵合過程的一個示例是熱壓鍵合(TCB)過程，該過程可用於倒裝晶片鍵合。與常規的焊爐回流過程不同的是，TCB過程不是批量過程。在TCB過程期間倒裝晶片模片的鍵合在同一時間執行一個模片。來自於矽晶片的模片被翻轉並且利用面向下的模片上的隆起轉移到鍵合臂。由鍵合臂承載的模片然後被放置到基板的鍵合部位上或者另一模片上。在模片上施加小的壓縮力以將其壓靠在基板上或者另一模片上，以確保模片和基板之間或者相應的模片之間的良好接觸。
人們不期望鍵合材料上具有雜質，這是因為雜質阻止鍵合材料和鍵合表面之間的良好接觸，這可導致最終產品的性能劣化。在模片鍵合過程中存在許多潛在雜質源。例如，雜質可來源於覆蓋鍵合材料的表面的外部材料，由鍵合材料在TCB過程期間在高溫下氧化產生，或者由在鍵合過程期間產生的副產物產生。
降低可能干涉鍵合過程的雜質的量將是有益的，以避免所組裝的電子封裝的性能劣化。
因此，本發明的目的是旨在提供一種模片鍵合裝置，該模片鍵合裝置能夠減少雜質的量以避免所組裝的電子封裝的性能劣化。
根據本發明，提供了一種模片鍵合裝置，該模片鍵合裝置包括：第一惰性氣體容器，該第一惰性氣體容器具有第一惰性氣體濃度；封閉在所述第一惰性氣體容器內的第二惰性氣體容器，該第二惰性氣體容器 具有第二惰性氣體濃度，該第二惰性氣體濃度比所述第一惰性氣體濃度高；鍵合頭，該鍵合頭位於所述第二惰性氣體容器中用於接收待鍵合模片；以及第三惰性氣體容器，該第三惰性氣體容器具有與所述第一惰性氣體容器和所述第二惰性氣體容器分離並且能夠定位基板以鍵合模片的惰性氣體環境。所述鍵合頭操作成在所述第二惰性氣體容器內的第一位置和所述第三惰性氣體容器內的第二位置之間移動所述模片，以將所述模片鍵合到位於所述第三惰性氣體容器中的所述基板上。
結合說明部分、所附要求項以及附圖，上述和其它特徵、各個方面和各個優點將變得顯而易見。
圖1
10‧‧‧模片鍵合機10
12‧‧‧高速轉移系統
13‧‧‧基板供應裝置
14‧‧‧基板轉移臂(STA)
15‧‧‧半導體模片供應裝置
16‧‧‧基板轉移臂(STA)頭
20‧‧‧模片拾取臂(DPA)
22‧‧‧模片拾取臂(DPA)頭
30‧‧‧模片轉移器臂(DTA)
40‧‧‧大型惰性環境
50‧‧‧芯部惰性環境
60‧‧‧鍵合段
圖2
24‧‧‧保護模片
26‧‧‧基板
32‧‧‧DTA開口
40‧‧‧大型惰性環境系統
42‧‧‧大型惰性室基板
44‧‧‧大型惰性室
46‧‧‧鍵合段加熱器
50‧‧‧芯部惰性環境
52‧‧‧鍵合頭
54‧‧‧芯部惰性室
60‧‧‧鍵合段
62‧‧‧壁
66‧‧‧鍵合段基座
70‧‧‧BEW開口
74‧‧‧第二容器開口
80‧‧‧小型惰性環境
90‧‧‧惰性環境系統
圖3
32‧‧‧DTA開口
42‧‧‧大型惰性室基板
50‧‧‧芯部惰性環境
60‧‧‧鍵合段
62‧‧‧壁
64‧‧‧鍵合段惰性氣體出口
70‧‧‧BEW開口
80‧‧‧小型惰性環境
圖4
34‧‧‧惰性氣體入口
36‧‧‧擴散器
37‧‧‧墊圈層
38‧‧‧流動通道板
54‧‧‧芯部惰性室
56‧‧‧鍵合頭開口
58‧‧‧透明視窗
圖5
36‧‧‧擴散器
38‧‧‧流動通道板
42‧‧‧大型惰性室基板
50‧‧‧芯部惰性環境
52‧‧‧鍵合頭
60‧‧‧鍵合段
70‧‧‧BEW開口
80‧‧‧小型惰性環境
圖6
60‧‧‧鍵合段
62‧‧‧壁
64‧‧‧鍵合段惰性氣體出口
65‧‧‧存儲空間
68‧‧‧小型惰性室氣體出口
69‧‧‧外惰性氣體出口
圖7
60‧‧‧鍵合段
42‧‧‧大型惰性室基板
80‧‧‧小型惰性環境
圖8
24‧‧‧模片
42‧‧‧大型惰性室基板
52‧‧‧鍵合頭
60‧‧‧鍵合段
70‧‧‧BEW開口
72‧‧‧焊劑排出入口
74‧‧‧第二容器開口
76‧‧‧第一板
77‧‧‧第一孔
78‧‧‧第二板
現在將參照附圖，僅通過示例描述本發明的實施方式，附圖中：圖1是根據本發明的優選實施方式的模片鍵合機的平面圖；圖2是用於執行模片鍵合的惰性環境系統的側視圖；圖3是惰性環境系統的包括用於接收待處理的基板的可動鍵合段的部分的立體圖；圖4是惰性環境系統中包括的芯部惰性環境的立體圖；圖5是芯部惰性環境中包括的示例性氣體流的剖面圖；圖6是示出從其產生的空氣流的鍵合段的立體圖；圖7是惰性環境系統中包括的小型惰性環境的側視圖；以及圖8示出了結合在模片鍵合機中的焊劑排氣系統。
在附圖中，相同的部件用相同的附圖標記表示。
圖1是根據本發明的優選實施方式的模片鍵合機10的平面圖。模片鍵合機10包括轉移系統，諸如高速轉移系統12，其構造成將鍵合基板或者模片封裝輸送到基板轉移臂(STA)14的基板轉移臂(STA)頭16操作成拾取基板所在的位置。基板從基板供應裝置13被轉移到高速轉移系統12。可沿X軸移動的STA14被構造成輸送基板並且將基板放置到位於載入位置的鍵合段60上。可沿X-Y軸移動的鍵合段60可在第一惰性氣 體容器或者大型惰性環境40下方移動。大型惰性環境40具有第一惰性氣體濃度。大型惰性環境40包括具有第二惰性氣體濃度的第二惰性氣體容器或者芯部惰性環境50。第二惰性氣體濃度具有比第一惰性氣體濃度更高的惰性氣體濃度。換言之，位於大型惰性環境40內的芯部惰性環境50具有比大型惰性環境40更低的氧濃度。鍵合段可位於大型惰性環境40或者芯部惰性環境50的下方。鍵合段60被構造成將基板從基板被載入到鍵合段60上的載入位置輸送到在芯部惰性環境50下方的執行模片鍵合所在的鍵合位置。在鍵合段60將基板移動到大型惰性環境40下方之前可以使用清潔系統(未示出)來清潔基板。
模片拾取臂(DPA)20的模片拾取臂(DPA)頭22被構造成從半導體模片供應裝置15拾取模片。DPA 20被構造成將模片輸送到位於大型惰性環境40內的模片輸送器或者模片轉移器臂(DTA)30。DTA 30被構造成將模片輸送到大型惰性環境40內的拾取位置以待由鍵合頭52拾取。基板和模片到鍵合位置的輸送可以同時執行。
圖2是用於執行模片鍵合的惰性環境系統90的側視圖。具體地，惰性環境系統40保護模片24和基板26免受雜質和氧化的影響，尤其是當模片24和基板26的溫度高的時候，例如在鍵合之前、期間和之後。惰性環境系統90包括大型惰性環境40、位於大型惰性環境40內的芯部惰性環境50以及位於大型惰性環境40下方的第三惰性氣體容器或者小型惰性環境80。小型惰性環境80具有與大型惰性環境40和芯部惰性環境50分離的惰性氣體環境。小型惰性環境80安裝在鍵合段60上，基板26可以定位在鍵合段上以用於模片鍵合。
大型惰性環境40包括大型惰性室44以及覆蓋大型惰性室44的底部的大型惰性室基板42。大型惰性室44還包括位於該大型惰性室44的側壁上的DTA開口32。DTA開口32被構造成允許DPA 20將模片24轉移到DTA 30。大型惰性室基板42包括大體位於該大型惰性室基板42的中心處的第一容器開口或者鍵合排氣窗(BEW)開口70。芯部惰性環境50包括與BEW開口70和拾取位置對準的第二容器開口74，從而使得鍵合頭52能夠移動到大型惰性環境40中的拾取位置，以從DTA 30拾取模片24。第二容器開口74和BEW開口70還與鍵合位置對準，從而使得鍵合頭52 能夠移動到鍵合位置，以將模片鍵合到基板26。BEW開口70和第二容器開口74將大型惰性環境40、芯部惰性環境50以及小型惰性環境80流體地連接。大型惰性環境40提供低氧惰性環境，以保護模片24，在將模片24移動到拾取位置的情況下，該模片24通常還未被加熱以進行鍵合。大型惰性環境40不具有直接的惰性氣體供應裝置，而是通常被被動地填充有從芯部惰性環境50和/或小型惰性環境80溢流的惰性氣體。大型惰性環境40還可以包括檢查光學裝置，以執行預鍵合檢查和/或鍵合後檢查。
芯部惰性環境50包括在其底部處具有第二容器開口74的芯部惰性室54。鍵合頭52位於芯部惰性環境50內。芯部惰性環境50大體位於BEW開口70的上方。鍵合頭52操作成將模片24從芯部惰性環境50內的第一位置移動到小型惰性環境80內的第二位置，以將模片24鍵合到位於小型惰性環境80內的基板26上。DTA 30被構造成將模片24輸送到鍵合頭52的下方，以使鍵合頭52拾取模片24。鍵合頭包括用於將模片24加熱到鍵合溫度的模片頭加熱器(未示出)。高濃度的惰性氣體(例如氮)被連續地供應到芯部惰性環境50中，以將氧的濃度保持得盡可能低，以在模片24由鍵合頭52加熱時保護模片24免受氧化的影響。
鍵合段60包括鍵合段加熱器46、位於鍵合段加熱器46上的鍵合段基座66以及沿著鍵合段60的周緣的壁62。鍵合段基座66被構造成保持基板26，並且鍵合段加熱器46被構造成加熱基板26以用於鍵合。在鍵合段60移動到大型惰性環境40的下方時形成小型惰性環境80。小型惰性環境80主要包括鍵合段60的由側面上的壁62、底部上的鍵合段基座66以及頂部上的大型惰性室基板42封閉的部分。在壁62和大型惰性室基板42之間具有間隙，該間隙允許小型惰性環境80在大型惰性環境40下方自由地移動。小型惰性環境80提供了低氧惰性環境以在基板26由鍵合段加熱器46加熱時(例如在將基板26輸送到芯部惰性環境50下方的鍵合位置時)保護基板26。當小型惰性環境80位於芯部惰性環境50的下方時，一些惰性氣體從芯部惰性環境50流動到小型惰性環境80，因此向小型惰性環境80提供惰性氣體的供應。
圖3是圖2的惰性環境系統90的一部分的立體圖，包括用於接收待被處理的基板26的可動鍵合段60。可動鍵合段60包括XY台。壁 62包括鍵合段惰性氣體出口64，該鍵合段惰性氣體出口64圍繞或者封閉歧管結構中的小型惰性環境80的側面。DTA開口32被構造成允許DPA 20將模片24轉移到DTA 30。DPA 20操作成延伸穿過DTA開口32，以將模片轉移到DTA 30。由DPA 20將模片24向大型惰性環境40中的轉移通常被盡可能快地執行，以減少模片24被暴露于周圍空氣的時間，從而使模片24的氧化最小。為了使大型惰性環境40和周圍空氣之間的氣體交換最小，可以在DTA開口32處設置門(未示出)。門可以包括機械捲簾門，其僅在DPA 20將模片24轉移到DTA 30時打開並且在其它時間保持關閉。
圖4是惰性環境系統90中包括的芯部惰性環境50的立體圖。芯部惰性室54可以包括位於側壁處的透明視窗58，以允許使用者觀察芯部惰性環境50。芯部惰性環境50包括高濃度的惰性氣體和低濃度的氧，以在模片24由鍵合頭52加熱到氧化更容易發生的高溫時防止氧化。惰性氣體被主動且直接地供應到芯部惰性環境50以保持高濃度的惰性氣體和低濃度的氧。芯部惰性室54包括用於將惰性氣體供應到芯部惰性環境50的惰性氣體入口34、連接到惰性氣體入口34的多個惰性氣體出口或者擴散器36以及用於將來自惰性氣體入口34的惰性氣體輸送到擴散器36的流動通道板38。覆蓋芯部惰性室54的頂部的流動通道板38包括四個周緣側壁，這些側壁限定鍵合頭開口56以定位鍵合頭52。墊圈層37放置在流動通道板38的頂表面上。擴散器36沿著流動通道板38的兩個相對的周緣側壁定位。
圖5是芯部惰性環境50中包括的示例性氣體流的剖視圖。惰性氣體供應裝置(未示出)經由惰性氣體入口34連接到芯部惰性環境50，以向芯部惰性環境50供應惰性氣體。惰性氣體從惰性氣體入口34流入到流動通道板38中，然後流入到擴散器36。相等地間隔開的擴散器36將惰性氣體均勻地分佈到芯部惰性環境50中。擴散器36圍繞鍵合頭52和模片24並且朝向位於芯部惰性環境50的底部處的第二容器開口74引導層狀向下的惰性氣體流。擴散器36可以被構造成減慢惰性氣體的流動速度，以更佳地產生層狀向下流以及芯部惰性環境50內的均勻濃度的惰性氣體。這樣，產生適當的環境以進行鍵合並且保護被加熱的模片24免受氧化。
芯部惰性環境50位於大型惰性室基板42的BEW開口70的正上方。當小型惰性環境80位於鍵合位置時，小型惰性環境80位於芯部 惰性環境50和BEW開口70的正下方。來自擴散器36的惰性氣體充滿芯部惰性環境50並且向下朝向BEW開口70流動。
圖6示出了鍵合段60的立體圖，以示出從其產生的空氣流。鍵合段60包括壁62，壁62包括鍵合段惰性氣體出口64，鍵合段惰性氣體出口64圍繞歧管結構中的小型惰性環境80。鍵合段惰性氣體出口64包括外惰性氣體出口69，該外惰性氣體出口69向上引導惰性氣體，由此在鍵合段惰性氣體出口64上方形成屏障或者空氣簾。鍵合段60還包括內小型惰性室氣體出口68，其將惰性氣體供應到小型惰性環境80中。鍵合段60還包括附加存儲空間65，該附加存儲空間65位於壁62中的一個壁和基板26可被定位以進行模片鍵合所在的位置之間。附加存儲空間65例如可以用作噴嘴組，以存儲不同的噴嘴來拾取不同的模片。在鍵合頭52和噴嘴由芯部惰性環境50和小型惰性環境80保護的情況下，鍵合頭52在鍵合過程期間的任何時間可以改變到能夠安裝在鍵合頭52上的不同的噴嘴。
圖7是惰性環境系統90中包括的小型惰性環境80的側視圖。在鍵合段60移動到大型惰性環境40下方時，產生可動的小型惰性環境80。小型惰性環境80主要包括鍵合段60的由側面上的壁62、底部上的鍵合段基座66以及頂部上的大型惰性室基板42封閉的部分。在壁62的鍵合段惰性氣體出口64和大型惰性環境40的大型惰性室基板42之間存在間隙，從而使得小型惰性環境80可以在大型惰性環境40下方並且相對於大型惰性環境40和芯部惰性環境50自由地移動。外惰性氣體出口69朝向大型惰性環境40的大型惰性室基板42排出惰性氣體，以形成屏障或者空氣簾來限制周圍空氣進入小型惰性環境80。由從外惰性氣體出口69流動的惰性氣體形成的空氣簾被設計成限制小型惰性環境80和周圍空氣之間的氣體交換。來自外惰性氣體出口69的惰性氣體直接流向大型惰性室基板42，並且惰性氣體流分開從而使得惰性氣體流的一部分向內被引導到小型惰性環境80中。這樣，空氣簾限制周圍空氣進入小型惰性環境80中，即使在小型惰性環境80移動到大型惰性環境40下方時也如此。
小型惰性環境80用於保護基板26免受氧化。基板26被放置在周圍空氣環境中的鍵合段60上，但是在鍵合段60移動到大型惰性環境40下方時，產生小型惰性環境80。當小型惰性環境80產生時，基板26可 以被安全地加熱，這是因為小型惰性環境80保護基板26在輸送到大型惰性環境40下方期間以及鍵合期間免受氧化。
圖8示出了模片鍵合機中結合的焊劑排氣系統。在鍵合期間，保持模24的鍵合頭52將模片24加熱達至適當的溫度以進行鍵合，並且向下朝向已由鍵合段加熱器46加熱到適當溫度的基板26移動以用於鍵合。鍵合頭52向下移動通過BEW開口70和第二容器開口74，直到模片24接觸基板26時為止。模片24然後鍵合到高溫下的基板26，並且在鍵合期間產生汽化焊劑。焊劑排氣系統包括焊劑排氣入口72、連接到焊劑排出入口72的蒸汽冷凝器(未示出)以及連接到蒸汽冷凝器的存儲收集器(未示出)，並且焊劑排氣系統被構造成移除汽化焊劑。大型惰性室基板42包括第一板76和第二板78，第一板76包括第一孔77，第二板78包括與第一孔77對準的第二孔79。第一孔77和第二孔79一起形成BEW開口70。焊劑排氣入口72位於BEW開口70處，並且焊劑排氣入口72包括位於第一板76和第二板78之間的空間。汽化焊劑可以從第一板76和第二板78之間的BEW開口70進入焊劑排氣入口72。焊劑排氣入口72的形狀例如可以是圓形的，從而使得汽化焊劑從所有方向進入圓形形狀的焊劑排氣入口72。焊劑排氣系統產生抽吸力以將在鍵合期間產生的汽化焊劑提取到焊劑排氣入口72中，並且之後從焊劑排氣系統排出焊劑排氣。
焊劑排氣系統還被構造成在小型惰性環境80不位於BEW開口70下方時提取周圍空氣，從而使得當小型惰性環境不位於BEW開口70下方時防止周圍空氣進入小型惰性環境80。另外，焊劑排氣系統被構造成在小型惰性環境80移動到BEW開口70的下方時將周圍空氣提取到小型惰性環境80中。此外，焊劑排氣系統可以被構造成將惰性氣體供應裝置與小型惰性環境80相關聯，從而使得即使不具有由從外惰性氣體出口69流動的惰性氣體形成的空氣簾，也防止周圍空氣進入到小型惰性環境80中。
大型惰性環境40中氧的濃度可大可小，但是通常為50ppm(百萬分率)至100ppm。芯部惰性環境50中氧的濃度也可以大小不一，但是通常為0ppm至50pmm。小型惰性環境80中氧的濃度也可大小不一，但是通常為0ppm至50pmm。
儘管已參照一些實施方式相當詳細地描述了本發明，但其它 實施方式也是可行的。
例如，如果不設置DTA開口32處的門，則可以提供惰性氣體空氣簾，以使得大型惰性環境40和周圍空氣之間的氣體交換最少。
因此，所附請求項的精神和範圍不應被限制于本文所包含的實施方式的描述。

Claims (16)

  1. 一種模片鍵合裝置，該模片鍵合裝置包括：第一惰性氣體容器，該第一惰性氣體容器具有第一惰性氣體濃度；封閉在所述第一惰性氣體容器內的第二惰性氣體容器，該第二惰性氣體容器具有第二惰性氣體濃度，該第二惰性氣體濃度比所述第一惰性氣體濃度高；鍵合頭，該鍵合頭位於所述第二惰性氣體容器中用於接收待鍵合模片；以及第三惰性氣體容器，該第三惰性氣體容器相對於所述第一惰性氣體容器和所述第二惰性氣體容器移動，該第三惰性氣體容器具有與所述第一惰性氣體容器和所述第二惰性氣體容器分離並且能夠定位基板以鍵合模片的惰性氣體環境；其中，所述鍵合頭操作成在所述第二惰性氣體容器內的第一位置和所述第三惰性氣體容器內的第二位置之間移動所述模片，以將所述模片鍵合到位於所述第三惰性氣體容器中的所述基板上。
  2. 根據請求項1所述的模片鍵合裝置，其中所述第三惰性氣體容器位於所述第一惰性氣體容器的下方。
  3. 根據要求項1所述的模片鍵合裝置，其中所述第三惰性氣體容器安裝在鍵合段上。
  4. 根據要求項3所述的模片鍵合裝置，其中所述鍵合段包括位於該鍵合段的周緣處的壁，並且所述壁包括多個惰性氣體出口以朝向所述第一惰性氣體容器排出惰性氣體，以形成空氣簾來限制周圍空氣進入所述第三惰性氣體容器。
  5. 根據要求項4所述的模片鍵合裝置，其中所述鍵合段位於所述第一惰性氣體容器和所述第二惰性氣體容器的下方，並且在所述鍵合段的所述壁和所述第一惰性氣體容器之間存在間隙，該間隙允許所述鍵合段相對於所述第一惰性氣體容器和所述第二惰性氣體容器移動。
  6. 根據要求項3所述的模片鍵合裝置，其中所述鍵合段包括用於存儲一個或多個噴嘴的附加存儲空間，所述一個或多個噴嘴能夠安裝在所述鍵合頭上，其中所述附加存儲空間與所述基板可定位以進行模片鍵合所在的位置相鄰。
  7. 根據要求項3所述的模片鍵合裝置，其中所述鍵合段可在載入位置和鍵合位置之間移動，所述基板在所述載入位置被載入到所述鍵合段上，所述模片在所述鍵合位置被鍵合到所述基板。
  8. 根據要求項7所述的模片鍵合裝置，該模片鍵合裝置還包括轉移臂，該轉移臂操作成輸送所述基板並且在所述鍵合段位於所述載入位置時將所述基板放置到所述鍵合段上。
  9. 根據要求項1所述的模片鍵合裝置，其中：所述第一惰性氣體容器包括第一容器開口；所述第二惰性氣體容器包括第二容器開口；以及所述第一容器開口和所述第二容器開口對準以允許所述鍵合頭延伸穿過所述各個開口以將所述模片鍵合到所述基板。
  10. 根據要求項9所述的模片鍵合裝置，該模片鍵合裝置還包括模片輸送器，該模片輸送器操作成將所述模片輸送到位於所述第一惰性氣體容器中的拾取位置，其中所述拾取位置與所述第一容器開口和所述第二容器開口對準，以允許所述鍵合頭移動到所述拾取位置以從所述模片輸送器拾取所述模片。
  11. 根據要求項10所述的模片鍵合裝置，該模片鍵合裝置還包括位於所述第一惰性氣體容器的側壁上的模片輸送器開口，其中模片轉移臂操作成延伸穿過所述模片輸送器開口，以將所述模片輸送到所述模片輸送器。
  12. 根據要求項9所述的模片鍵合裝置，其中所述第一容器開口包括在基板中，該基板包括：第一板，該第一板包括第一板孔；以及與所述第一板間隔開的第二板，該第二板包括與所述第一板孔對準的第二板孔，所述第一板孔和所述第二板孔一起形成所述第一容器開口。
  13. 根據要求項12所述的模片鍵合裝置，該模片鍵合裝置還包括與所述基板連接的排氣裝置，以將來自所述第一容器開口的空氣引入所述第一板和所述第二板之間。
  14. 根據要求項1所述的模片鍵合裝置，該模片鍵合裝置還包括與所述第二惰性氣體容器連接的第二容器惰性氣體供應裝置，以向所述第二惰性氣體容器供應惰性氣體，其中所述第一惰性氣體容器從所述第二惰性氣體容器的溢流接收來自所述第二容器惰性氣體供應裝置的惰性氣體，並且無惰性氣體供應裝置被直接連接到所述第一惰性氣體容器。
  15. 根據要求項14所述的模片鍵合裝置，其中所述第二容器惰性氣體供應裝置包括多個惰性氣體出口，所述多個惰性氣體出口均勻地間隔開以將圍繞定位在所述第二惰性氣體容器內的所述鍵合頭的層流引向所述第二惰性氣體容器的開口。
  16. 根據要求項1所述的模片鍵合裝置，該模片鍵合裝置還包括位於所述第二惰性氣體容器的側壁處的透明視窗，以允許使用者觀察所述第二惰性氣體容器。
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