TWI627508B - Ｅｕｖ微影用阻劑下層膜形成組成物 - Google Patents

Ｅｕｖ微影用阻劑下層膜形成組成物 Download PDF

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Publication number
TWI627508B
TWI627508B TW102109627A TW102109627A TWI627508B TW I627508 B TWI627508 B TW I627508B TW 102109627 A TW102109627 A TW 102109627A TW 102109627 A TW102109627 A TW 102109627A TW I627508 B TWI627508 B TW I627508B
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TW
Taiwan
Prior art keywords
group
carbon atoms
underlayer film
resist
forming composition
Prior art date
Application number
TW102109627A
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English (en)
Chinese (zh)
Other versions
TW201400987A (zh
Inventor
遠藤貴文
坂本力丸
藤谷徳昌
大西竜慈
何邦慶
Original Assignee
日產化學工業股份有限公司
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Publication date
Application filed by 日產化學工業股份有限公司 filed Critical 日產化學工業股份有限公司
Publication of TW201400987A publication Critical patent/TW201400987A/zh
Application granted granted Critical
Publication of TWI627508B publication Critical patent/TWI627508B/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
    • C08G59/186—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents with acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102109627A 2012-03-23 2013-03-19 Ｅｕｖ微影用阻劑下層膜形成組成物 TWI627508B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-067599 2012-03-23
JP2012067599 2012-03-23

Publications (2)

Publication Number Publication Date
TW201400987A TW201400987A (zh) 2014-01-01
TWI627508B true TWI627508B (zh) 2018-06-21

Family

ID=49222477

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102109627A TWI627508B (zh) 2012-03-23 2013-03-19 Ｅｕｖ微影用阻劑下層膜形成組成物

Country Status (3)

Country Link
JP (1) JP6083537B2 (ja)
TW (1) TWI627508B (ja)
WO (1) WO2013141015A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105579909B (zh) * 2013-09-27 2019-11-12 日产化学工业株式会社 抗蚀剂下层膜形成用组合物和使用其的抗蚀剂图案的形成方法
WO2015163195A1 (ja) * 2014-04-25 2015-10-29 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JPWO2019138823A1 (ja) * 2018-01-09 2021-01-21 Jsr株式会社 パターニングされた基板の製造方法
KR102400603B1 (ko) * 2019-03-29 2022-05-19 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
JP7351262B2 (ja) * 2019-07-02 2023-09-27 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7334683B2 (ja) * 2019-08-02 2023-08-29 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7363687B2 (ja) * 2019-08-14 2023-10-18 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
CN114746468A (zh) * 2019-12-04 2022-07-12 日产化学株式会社 聚合物的制造方法
KR102499391B1 (ko) 2019-12-31 2023-02-10 삼성에스디아이 주식회사 초박막 형성이 가능한 레지스트 하층막 조성물
CN113126432A (zh) * 2019-12-31 2021-07-16 罗门哈斯电子材料韩国有限公司 用于光致抗蚀剂底层的涂料组合物
KR102448568B1 (ko) 2020-01-17 2022-09-27 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102563290B1 (ko) 2020-01-31 2023-08-02 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
JP2021182133A (ja) 2020-05-18 2021-11-25 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JPWO2022172917A1 (ja) * 2021-02-09 2022-08-18
JPWO2022244682A1 (ja) 2021-05-19 2022-11-24
KR20240018455A (ko) 2021-06-07 2024-02-13 제이에스알 가부시끼가이샤 반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물
KR20240041932A (ko) 2021-08-10 2024-04-01 제이에스알 가부시끼가이샤 반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물
TW202348671A (zh) * 2022-01-25 2023-12-16 日商日產化學股份有限公司 包含末端封閉聚合物之阻劑下層膜形成組成物

Citations (2)

* Cited by examiner, † Cited by third party
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JP2010181453A (ja) * 2009-02-03 2010-08-19 Nissan Chem Ind Ltd レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TW201303510A (zh) * 2011-03-15 2013-01-16 Nissan Chemical Ind Ltd 光阻下層膜形成組成物及使用其之光阻圖型之形成方法

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JP4368593B2 (ja) * 2003-02-20 2009-11-18 丸善石油化学株式会社 チオール化合物、共重合体及び共重合体の製造方法
EP1673801B1 (en) * 2003-10-15 2014-04-09 Brewer Science, Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
JP2006184471A (ja) * 2004-12-27 2006-07-13 Sanyo Electric Co Ltd リソグラフィ用反射防止膜形成組成物及びレジストパターンの形成方法
JP4602842B2 (ja) * 2005-06-07 2010-12-22 東京応化工業株式会社 反射防止膜形成用組成物、それを用いた反射防止膜
JP5141882B2 (ja) * 2008-01-24 2013-02-13 日産化学工業株式会社 バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法
CN104749887A (zh) * 2009-04-21 2015-07-01 日产化学工业株式会社 Euv光刻用抗蚀剂下层膜形成用组合物
US8501383B2 (en) * 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
KR20120101534A (ko) * 2009-12-14 2012-09-13 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010181453A (ja) * 2009-02-03 2010-08-19 Nissan Chem Ind Ltd レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TW201303510A (zh) * 2011-03-15 2013-01-16 Nissan Chemical Ind Ltd 光阻下層膜形成組成物及使用其之光阻圖型之形成方法

Also Published As

Publication number Publication date
JPWO2013141015A1 (ja) 2015-08-03
TW201400987A (zh) 2014-01-01
WO2013141015A1 (ja) 2013-09-26
JP6083537B2 (ja) 2017-02-22

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